EP2901455A1 - Split-gate memory cell with substrate stressor region, and method of making same - Google Patents
Split-gate memory cell with substrate stressor region, and method of making sameInfo
- Publication number
- EP2901455A1 EP2901455A1 EP13842670.5A EP13842670A EP2901455A1 EP 2901455 A1 EP2901455 A1 EP 2901455A1 EP 13842670 A EP13842670 A EP 13842670A EP 2901455 A1 EP2901455 A1 EP 2901455A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- gate
- insulated
- substrate
- region
- floating gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000000463 material Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
- 235000012239 silicon dioxide Nutrition 0.000 description 14
- 239000000377 silicon dioxide Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 125000006850 spacer group Chemical group 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000007943 implant Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7849—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being provided under the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/631,490 US9018690B2 (en) | 2012-09-28 | 2012-09-28 | Split-gate memory cell with substrate stressor region, and method of making same |
PCT/US2013/052846 WO2014051855A1 (en) | 2012-09-28 | 2013-07-31 | Split-gate memory cell with substrate stressor region, and method of making same |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2901455A1 true EP2901455A1 (en) | 2015-08-05 |
EP2901455A4 EP2901455A4 (en) | 2016-05-25 |
EP2901455B1 EP2901455B1 (en) | 2017-12-13 |
Family
ID=50384363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13842670.5A Active EP2901455B1 (en) | 2012-09-28 | 2013-07-31 | Split-gate memory cell with substrate stressor region, and method of making same |
Country Status (7)
Country | Link |
---|---|
US (2) | US9018690B2 (en) |
EP (1) | EP2901455B1 (en) |
JP (1) | JP6049044B2 (en) |
KR (1) | KR20150058515A (en) |
CN (1) | CN104685570B (en) |
TW (1) | TWI525840B (en) |
WO (1) | WO2014051855A1 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6238235B2 (en) * | 2014-06-13 | 2017-11-29 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
US9691883B2 (en) * | 2014-06-19 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Asymmetric formation approach for a floating gate of a split gate flash memory structure |
US10312246B2 (en) | 2014-08-08 | 2019-06-04 | Silicon Storage Technology, Inc. | Split-gate flash memory cell with improved scaling using enhanced lateral control gate to floating gate coupling |
US10312248B2 (en) | 2014-11-12 | 2019-06-04 | Silicon Storage Technology, Inc. | Virtual ground non-volatile memory array |
US9960172B2 (en) * | 2014-11-19 | 2018-05-01 | Globalfoundries Singapore Pte. Ltd. | Reliable non-volatile memory device |
JP6503077B2 (en) * | 2015-01-22 | 2019-04-17 | シリコン ストーリッジ テクノロージー インコーポレイテッドSilicon Storage Technology, Inc. | High density split gate memory cell |
US9917165B2 (en) * | 2015-05-15 | 2018-03-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory cell structure for improving erase speed |
US9646978B2 (en) * | 2015-06-03 | 2017-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned flash memory device with word line having reduced height at outer edge opposite to gate stack |
US9711513B2 (en) * | 2015-08-14 | 2017-07-18 | Globalfoundries Inc. | Semiconductor structure including a nonvolatile memory cell and method for the formation thereof |
CN107305892B (en) * | 2016-04-20 | 2020-10-02 | 硅存储技术公司 | Method of forming tri-gate non-volatile flash memory cell pairs using two polysilicon deposition steps |
WO2017184315A1 (en) * | 2016-04-20 | 2017-10-26 | Silicon Storage Technology, Inc. | Method of forming pairs of three-gate non-volatile flash memory cells using two polysilicon deposition steps |
US9978761B2 (en) * | 2016-05-27 | 2018-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned flash memory device |
US10418451B1 (en) * | 2018-05-09 | 2019-09-17 | Silicon Storage Technology, Inc. | Split-gate flash memory cell with varying insulation gate oxides, and method of forming same |
CN112185970A (en) | 2019-07-02 | 2021-01-05 | 硅存储技术公司 | Method of forming split gate memory cell |
CN112185815A (en) | 2019-07-04 | 2021-01-05 | 硅存储技术公司 | Method of forming split gate flash memory cells with spacer defined floating gates and discretely formed polysilicon gates |
US11450678B2 (en) * | 2019-11-14 | 2022-09-20 | Globalfoundries U.S. Inc. | Split gate (SG) memory device and novel methods of making the SG-memory device |
CN114335185A (en) | 2020-09-30 | 2022-04-12 | 硅存储技术股份有限公司 | Split-gate dual bit non-volatile memory cell with erase gate disposed over word line gate and method of making the same |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5029130A (en) | 1990-01-22 | 1991-07-02 | Silicon Storage Technology, Inc. | Single transistor non-valatile electrically alterable semiconductor memory device |
US6091104A (en) * | 1999-03-24 | 2000-07-18 | Chen; Chiou-Feng | Flash memory cell with self-aligned gates and fabrication process |
JP2001326289A (en) * | 2000-03-08 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | Nonvolatile memory and semiconductor device |
US6747310B2 (en) | 2002-10-07 | 2004-06-08 | Actrans System Inc. | Flash memory cells with separated self-aligned select and erase gates, and process of fabrication |
US7221597B2 (en) * | 2004-05-26 | 2007-05-22 | Micron Technology, Inc. | Ballistic direct injection flash memory cell on strained silicon structures |
US7315056B2 (en) * | 2004-06-07 | 2008-01-01 | Silicon Storage Technology, Inc. | Semiconductor memory array of floating gate memory cells with program/erase and select gates |
US7279758B1 (en) | 2006-05-24 | 2007-10-09 | International Business Machines Corporation | N-channel MOSFETs comprising dual stressors, and methods for forming the same |
US7618866B2 (en) * | 2006-06-09 | 2009-11-17 | International Business Machines Corporation | Structure and method to form multilayer embedded stressors |
US20090039410A1 (en) * | 2007-08-06 | 2009-02-12 | Xian Liu | Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing |
JP2010141003A (en) * | 2008-12-10 | 2010-06-24 | Toshiba Corp | Semiconductor device and method for manufacturing the same |
US8722482B2 (en) * | 2010-03-18 | 2014-05-13 | Globalfoundries Inc. | Strained silicon carbide channel for electron mobility of NMOS |
CN102339833B (en) | 2010-07-21 | 2013-04-24 | 中国科学院微电子研究所 | High-reliability split-gate nonvolatile memory structure with high-speed low-voltage operation function |
US8361847B2 (en) * | 2011-01-19 | 2013-01-29 | International Business Machines Corporation | Stressed channel FET with source/drain buffers |
JP2014103345A (en) * | 2012-11-22 | 2014-06-05 | Renesas Electronics Corp | Semiconductor device and semiconductor device manufacturing method |
-
2012
- 2012-09-28 US US13/631,490 patent/US9018690B2/en active Active
-
2013
- 2013-07-31 EP EP13842670.5A patent/EP2901455B1/en active Active
- 2013-07-31 KR KR1020157011008A patent/KR20150058515A/en not_active Application Discontinuation
- 2013-07-31 CN CN201380050696.2A patent/CN104685570B/en active Active
- 2013-07-31 WO PCT/US2013/052846 patent/WO2014051855A1/en active Application Filing
- 2013-07-31 JP JP2015534486A patent/JP6049044B2/en active Active
- 2013-08-07 TW TW102128267A patent/TWI525840B/en active
-
2015
- 2015-03-23 US US14/665,079 patent/US9306039B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2901455B1 (en) | 2017-12-13 |
US20140091382A1 (en) | 2014-04-03 |
JP6049044B2 (en) | 2016-12-21 |
US9306039B2 (en) | 2016-04-05 |
US20150200278A1 (en) | 2015-07-16 |
JP2015536047A (en) | 2015-12-17 |
TWI525840B (en) | 2016-03-11 |
CN104685570A (en) | 2015-06-03 |
WO2014051855A1 (en) | 2014-04-03 |
EP2901455A4 (en) | 2016-05-25 |
CN104685570B (en) | 2017-05-10 |
TW201419552A (en) | 2014-05-16 |
US9018690B2 (en) | 2015-04-28 |
KR20150058515A (en) | 2015-05-28 |
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