EP2753943A1 - Method of characterising the sensitivity of an electronic component subjected to irradiation conditions - Google Patents
Method of characterising the sensitivity of an electronic component subjected to irradiation conditionsInfo
- Publication number
- EP2753943A1 EP2753943A1 EP12755864.1A EP12755864A EP2753943A1 EP 2753943 A1 EP2753943 A1 EP 2753943A1 EP 12755864 A EP12755864 A EP 12755864A EP 2753943 A1 EP2753943 A1 EP 2753943A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- sensitivity
- criterion
- component
- irradiation
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- 230000035945 sensitivity Effects 0.000 title claims abstract description 54
- 230000005865 ionizing radiation Effects 0.000 claims abstract description 32
- 238000012512 characterization method Methods 0.000 claims abstract description 20
- 238000005259 measurement Methods 0.000 claims abstract description 9
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/31816—Soft error testing; Soft error rate evaluation; Single event testing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/001—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
- G01R31/002—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing where the device under test is an electronic circuit
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2881—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to environmental aspects other than temperature, e.g. humidity or vibrations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/30—Marginal testing, e.g. by varying supply voltage
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/005—Testing of electric installations on transport means
- G01R31/008—Testing of electric installations on transport means on air- or spacecraft, railway rolling stock or sea-going vessels
Definitions
- the present invention belongs to the field of electronic quality control devices and methods. It relates in particular to a method of characterizing the sensitivity of a component or electronic equipment, subjected to ionizing radiation as present in the natural radiative environment.
- the invention uses a source of ionizing radiation and a prediction tool.
- Electronic components particularly complex components and power components are increasingly used in aggressive environments, and in particular in environments that subject them to various disturbances (cosmic, electromagnetic, etc.), especially when uses in aircraft or satellites.
- various disturbances cosmic, electromagnetic, etc.
- One of the aims of the invention is to determine the sensitivity of electronic components and systems with respect to ionizing radiation, in other words, the particles of the heavy ion, neutron and proton type or any other particles leading to the generation of direct or indirect interaction charges in electronic components.
- the operation of the electronic components may be disturbed by the environment in which they operate, for example the natural or artificial radiative environment or the electromagnetic environment.
- the disturbances are due to interactions between the material of the component and the ionizing particles.
- One of the consequences of these disturbances is the creation of parasitic currents in the component.
- the effects may be varied and may lead to a transient or permanent malfunction of the component and the application that uses it. These types of failures are grouped under the term of singular effects.
- FIRE I LLE OF REM PLACEM ENT (RULE 26) encountered in space by satellites and launchers. At lower altitudes where the planes evolve, we note especially the presence of aggressions by neutrons or low energy protons. Neutrons are also responsible at ground level for malfunctions, for example in the electronics of portable devices, computer servers.
- the particle accelerator test is the reference tool for characterizing the sensitivity of electronic components vis-à-vis the particles of the natural radiative environment.
- this type of test is very expensive because exhaustive characterization requires a significant beam time.
- the invention therefore relates to a method of selecting an electronic equipment comprising at least one electronic component, said electronic equipment being potentially subject to the irradiation conditions listed in a predetermined specification.
- the method comprises a phase of characterizing a sensitivity parameter of the component at these irradiation conditions.
- This phase comprises:
- the irradiation step comprises sensitivity measurements of the component for a number of irradiation conditions that are less than all the conditions listed in the specifications,
- the method further comprises an extrapolation step using a simulation code of the results measured at the other conditions of irradiation of the specifications.
- the source of ionizing radiation makes it possible to characterize the sensitivity of the component for a reduced number of irradiation conditions (in particular energy of the incident particle).
- the simulation code is then based on this characterization performed for a reduced number of irradiation conditions to calculate the sensitivity of the component in many more irradiation conditions.
- the sources of ionizing radiation that can be envisaged for the invention are preferably inexpensive and compact.
- the method uses a radioactive isotope-based source that continuously emits ionizing radiation, such as americium sources that generate alphas or californium sources that produce ions over an energy range between 0 and 15 MeV with an average energy of 2.4 MeV.
- a radioactive isotope-based source that continuously emits ionizing radiation, such as americium sources that generate alphas or californium sources that produce ions over an energy range between 0 and 15 MeV with an average energy of 2.4 MeV.
- the method uses a compact electrical generator that emits ionizing radiation temporarily (for example only when a voltage is applied to accelerate the projectile particles).
- the method uses a source of mono-energetic neutrons generated by the fusion of two atoms.
- it is a D + D reaction (using a fusion of two Deuterium atoms, producing 2.5 MeV neutrons) or, preferably, a D + T neutron source (fusion of a Deuterium atom with a Tritium atom, producing 14.1 MeV neutrons).
- This type of source of ionizing radiation is relatively common, relatively inexpensive, and of reduced dimensions (typically a few tens of centimeters in length) and thus makes it possible to carry out sensitivity characterizations easily in a particular radiation range.
- a neutron particle accelerator test includes measurements made for different energies between 1 MeV and 150 MeV, for example at 10 MeV, 30 MeV, 60 MeV, 100 MeV, 150 MeV.
- neutrons are produced either in nuclear fission reactors or in particle accelerators where accelerated protons collide with a target material to create secondary neutrons. These neutrons have a spectrum where 50% of the neutrons created are mono-energetics and the remaining 50% have lower energies. These two methods of neutron generation require extremely complex installations which are therefore rare and very expensive to operate.
- the present method for characterizing the sensitivity of the component to radiation couples an experimental characterization using a source of ionizing radiation with limited properties (especially in the energy field) with a code simulation.
- simulation code used to calculate the sensitivity of a component in many irradiation conditions, it relies on a limited number of input parameters making it possible to calculate, for a radiative environment, the probability of occurrence of radiation effects (typically a predetermined type of failure). It can be either analytical methods (such as for example the BGR, SI MPA, PROFIT methods) or Monte Carlo type approaches. For the prediction of the sensitivity of a component to radiation, Monte Carlo approaches simulate a large number of incident particles and study the response of the component to each event individually. This type of approach makes it possible to build a statistic and to obtain an average response on the component.
- analytical methods such as for example the BGR, SI MPA, PROFIT methods
- Monte Carlo approaches simulate a large number of incident particles and study the response of the component to each event individually. This type of approach makes it possible to build a statistic and to obtain an average response on the component.
- These input parameters are related to the component being studied and the type of singular effects. They include, in particular, in the case of a switchover of a logic cell: 1 / the notion of critical load, which is the charge deposition necessary to cause the radiative event of interest (for example a change in the logic state of an elementary cell of a component of the processor or memory type) or, in an equivalent manner, a maximum current criterion for a maximum time, as well as on the definition 21 of the dimension of the sensitivity zone (also called sensible volume) associated to an elementary cell of the component, 3 / of the distance to the closest neighboring elementary cells, and 4 / the logical organization of the memory, to know if 2 bits of the same word are physically adjacent or not.
- critical load which is the charge deposition necessary to cause the radiative event of interest (for example a change in the logic state of an elementary cell of a component of the processor or memory type) or, in an equivalent manner, a maximum current criterion for a maximum time, as well as on the definition 21 of the dimension
- singular events are varied: it can be the logical change of state of a cell or several cells of a component of processor or memory type (called SEU for single Upset Event or MCU for Multiple Cell Upset), an error that can modify the global operation of a component (called SEFI for Single Event Functional Interrupt), short circuit (Single Event Latchup), transient phenomenon (Single Event Transient), destructive mechanisms in a power component (called SEB for Single Event Burnout or SEL for Single Event Latchup) or any other singular effect related to the interaction of a particle of the radiative environment with an electronic component.
- SEU single Upset Event or MCU for Multiple Cell Upset
- SEFI Single Event Functional Interrupt
- SEB Single Event Burnout
- SEL Single Event Latchup
- the input parameters of the simulation code, associated with a component or electronic equipment, can be obtained in various ways.
- Typical values associated with a component of a known technological step (“technology node”) can be estimated using values listed in the technology roadmaps (usually referred to as “technology roadmaps", including ITRS “International Technology Roadmaps for Semiconductors ”)
- Such technological roadmaps are for example provided by the manufacturers, with technical values associated with the release dates of the future products of their ranges.
- parameters related to the topology of the components can also be determined by a technological analysis of the component, or during a laser mapping associated with the type of failure studied.
- the laser can indeed be used to simulate the same types of errors as those triggered by the particles of the natural radiative environment. During laser mapping the position of the laser on the component is perfectly controlled, it is therefore possible to map the position of the sensitivity areas associated with the different types of errors.
- laser mapping is associated with the type of failure that can be detected by the test system.
- the method for producing such a laser map is known per se and is in itself subject to the scope of the invention. It is not detailed further here.
- At least some of these input parameters of the simulation code are determined on the basis of experimental characterization points obtained in the step with the source of ionizing radiation with limited properties.
- the step of determining certain input parameters of the simulation code includes an evaluation phase if a radiative event takes place following the passage of a particle as simulated by the prediction code, this phase proceeding through a valid approach of reaching the values thresholds relating to the criterion (s) used by the simulation code to model the radiative event of interest for the geometrical configuration relating to the zones of sensitivity associated with this criterion.
- this approach can be based either on the determination of the charge deposited by the ion in the sensitive volume of the elementary cell and the comparison thereof to the critical load, which represents a tipping threshold value. , or on the determination of the shape of the current as a function of time generated by the passage of the ion in the sensitive volume of the elementary cell and the comparison thereof to the maximum current criterion for a maximum time (imax , timax), which represents the tipping threshold.
- the step of determining certain input parameters of the simulation code includes an optimization phase to determine a most probable set of parameters making it possible to retrieve, using the simulation code, the measurement results obtained experimentally during the simulation. from the step of measuring the reaction of the component with radiation, using the source of ionizing radiation with limited properties.
- the set of parameters on which the optimization phase is carried out comprises one or more threshold values relating to the criterion (s) used by the simulation code to model the event. radiative interest and the geometric information relating to the sensitivity zones associated with this criterion.
- the set of parameters comprises the size of the sensitive volume, the positions of the sensitive volumes and the critical load or the pair of parameters (maximum current, maximum time).
- the set of parameters comprises the critical load, defined as the charge deposition necessary for to cause a radiative event of interest or equivalent a maximum current criterion for a maximum time (imax, timax), as well as on the size of the sensitivity zone associated with this criterion and optionally, the distance to the nearest neighboring cells, and the logical organization of memory, to know if 2 bits of the same word are physically adjacent or not.
- the simulation code is used to calculate the expected sensitivity for new configurations of irradiations meeting the specifications.
- FIG. 1 is a diagram illustrating the various elements implemented in the method
- FIG. 2 is a flowchart of the steps of an exemplary implementation of the method according to the invention.
- FIG. 3 illustrates the general principle of a Monte-Carlo code for predicting the sensitivity of electronic components, used in the present example of implementation of the method
- Figure 4 details symbolically the database of nuclear reactions used in a Monte Carlo simulation code
- Figure 5 illustrates the principle of two failover criteria.
- the method of selecting electronic components according to their sensitivity to ionizing radiation implements various elements illustrated in FIG.
- radioactive source 100 of a type known per se, installed on a frame (not shown in the figure) intended to receive electronic equipment or a component 101, placed at a distance h from the source and according to a geometry predetermined.
- the method also implements measuring means 102 of various signals of interest derived from component 101 when it is subjected to irradiation by the source 100.
- These measurement and calculation means 102 are presented, in the present example in no way limiting implementation of the method, in the form of a PC type microcomputer, known per se, provided with user interfaces and conventional storage means.
- a software for predicting component sensitivity to ionizing radiation is installed on this microcomputer.
- the method as described herein, comprises a series of steps whose flowchart is illustrated in FIG.
- an electronic component 101 to be analyzed is placed under the source of ionizing radiation 100, according to predetermined geometry conditions.
- This source of ionizing radiation 100 is, in the present example, of the D + T type, that is to say operating according to a principle of fusion of a Deuterium atom with a Tritium atom, thus producing on command neutrons of an energy of 14.1 MeV.
- This source of ionizing radiation 100 has radiation properties limited to one type of particles (neutrons) and a single energy: 14.1 Mev, but it is perfectly well known.
- this source 100 is of D + D type, or alternatively a permanent radioactive source of americium type which generates alpha or californium-type particles which produces neutrons over an energy range between 0 and 15 MeV with average energy. 2.4 MeV.
- the distance h between the source of ionizing radiation 100 and the electronic component 101 is precisely known, so as to accurately estimate the radiation flux received by the component.
- the geometrical configuration of the irradiation is perfectly known
- this component 101 is subjected to irradiation by the source of ionizing radiation 100. This results in a change in the state or operation of the component or parts.
- a step 220 a series of component reaction measurements are carried out on these radiations.
- Signals of interest of the component to be tested or the equipment are solicited or observed before and / or during and / or after the irradiation to allow evaluation, in the given irradiation configuration, its sensitivity vis-à-vis radiation.
- signals of interest are, for example, in the case of memory components, the content of the logical information of each of the memory cells. If one or more cells have had their contents change from 1 to 0 or 0 to 1, this translates to a level of sensitivity of the component to the particles (which equates to a probability of occurrence of this type of error ).
- SEB short circuit failure
- signals of interest can for example be observed by a dedicated test card.
- it may be the logical content of each of the memory cells of the component, the test card generating the signals (including addressing) that read the contents of each of the memory cells of the component.
- signals including addressing
- a set of input parameters of a previously chosen simulation code is determined, this set of input parameters making it possible, best to reproduce by calculation the results of the reaction measurements of the component with these radiations. , knowing that some of these parameters may possibly be provided by bibliographic knowledge and / or by other experimental means.
- the step 230 of determining input parameters uses an analytical method or Monte Carlo analysis of the sensitivity prediction of the electronic component.
- the remainder of the description presents the Monte Carlo analysis method (see FIG. 3), but the simpler analytical methods can also be used perfectly.
- the Monte Carlo calculation tool has a database of nuclear interactions 301 characterizing reaction products obtained by collision of an incident particle and a target atom.
- the calculation method used in the present example of implementation of the method, consists in producing a set of random draws 303 of nuclear reactions 302 associated with a draw of their location.
- an analysis based on a simplified model of the physical mechanisms, makes it possible to decide on the occurrence of an error of operation of the component (for example a change of logical state of an elementary cell or the triggering of a destructive phenomenon in a power component or other) induced by secondary ions having certain characteristics.
- Such a simulator makes it possible to calculate either the frequency of errors (SER) in a given radiative environment, or the effective cross section which is the measure of the sensitivity of a component as a function of energy or energy loss per unit of energy. length of the ionizing particle (step 309, FIG. 3).
- SER frequency of errors
- the Monte-Carlo prediction codes make it possible to take into account a large number of elementary cells, as well as the geometry of the component.
- the simulation tool used in the present method makes it possible to manage three problems:
- RED, GEANT4, or MCNP-deposited-tags (depending on the energy of the incident particle) or nuclear evaluation data such as ENDF or JENDL-deposited tags-may be used.
- the nuclear interaction databases used cover neutrons and protons and consist, for each incident energy, of hundreds of thousands of non-elastic and elastic nuclear events with the details of the nuclear reactions, i.e. , the atomic number and the atomic mass of the secondary ions, their energies and their emission characteristics (emission angles).
- the elastic-type reactions retain the nature of interacting particles and total kinetic energy.
- the non-elastic reactions are varied, each reaction is characterized by an energy threshold of appearance. These reactions induce the generation of one or more secondary ions.
- the simplified model of the physical mechanisms is obtained from the study of a large number of simulations by finite elements realized using dedicated simulation tools such as the commercial tools of the companies Synopsys or SILVACO - registered trademarks -. It is considered here that the simplified model of physical mechanisms has already been obtained for failures / errors of interest. These models currently exist in particular for SRAM memory elements and Power MOSFET and IGBTs power components.
- the ion or ions generated by the nuclear reaction must deposit enough energy in the drains of the transistors in the off state.
- a first method proceeds by a simplified approach (first order). It is based on the determination of the charge deposited by the ion in the sensitive volume of the elementary cell and the comparison thereof to the critical load, which represents the threshold value of tilting. This is the method underlying the simulation code used in the present method.
- a second method is a more detailed study of the (second-order) phenomenon.
- the collection of the carriers deposited by the passage of the ion is studied temporally (step 306 figure 3) in order to reconstruct the current.
- the temporal evolution of the current makes it possible to determine whether a singular effect occurs or not.
- a dynamic criterion is based on the maximum amplitude torque Imax of the current and the time at which this maximum current is set tlmax. Starting from the observation that all particle passages induce currents that have the same shape, that is to say a rapid growth (reflecting the drift mechanism) followed by a slow decrease (reflecting the diffusion mechanisms) each ion pass can be characterized by this pair. In the example of switching of bits in a memory, this criterion introduces a boundary curve separating the couples (Imax, tlmax) inducing failovers of those which do not induce them, characteristic of the sensitivity of an SRAM technology.
- Figure 5 illustrates the principle of two failover criteria.
- curves are provided by a calculation code describing the behavior of the energy deposition of the ions during their passage through the material (as the tool known under the trade name of SRI M - registered trademark of "Stopping and Range of Ions in Matter”).
- the nuclear database 301 and the SRIM curves 304 are fixed regardless of the component and the type of error studied.
- the input parameters (i.e., the characteristic digital data of the component) necessary for the sensitivity prediction of a component include, in this example, the critical load and information relating to the the topology 305 of the component that is to say the volume of the sensitive areas and the distance between sensitive areas. These parameters vary according to the component and the type of error studied.
- an optimization method of a type known per se and therefore not detailed here, is applied to determine the most probable set of parameters (by example size of sensitive volume, positions of the sensitive volumes and critical load) making it possible to find with the help of the prediction code the results obtained experimentally.
- the determination of the most probable set of parameters can also be facilitated, if at least one of the input parameters is determined by another method, such as for example a technological analysis 307 to determine the size of sensitivity areas.
- This method uses a source of radiation with limited properties with a prediction code, thus makes it possible to dispense with expensive tests carried out in particle accelerator and to characterize the sensitivity of an electronic component over a wide range of energies using in a coupled manner a more accessible irradiation means and a prediction code.
- the prediction code is then used to determine the parameter set
- a step 240 the simulation code thus parameterized is used to extrapolate the sensitivity of the electronic component 101 in a series of irradiation conditions, both in terms of particles and energy or energy deposits per unit length.
- a step 250 it verifies the compatibility of the electronic component 101 to a pre-established specifications.
- This method using a source of ionizing radiation 100 with limited properties, combined with an extrapolation code, thus makes it possible to dispense with expensive tests carried out in particle accelerator and to characterize the sensitivity of a component over a wide range of applications. energies by using coupled more accessible irradiation means and prediction code.
- the invention then allows, for example but without limitation, after characterization of the sensitivity of a component to irradiation conditions, when a dynamic application is executed on this component, to check if this component is compatible with the specifications of electronic equipment being designed, this equipment being subject to an environment and a previously known probability of failure. If, according to the characterization process, the component does not fulfill the specifications, the designers must modify the implementation of the electronic equipment.
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- Environmental & Geological Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measurement Of Radiation (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1157892A FR2979708B1 (en) | 2011-09-06 | 2011-09-06 | METHOD FOR CHARACTERIZING THE SENSITIVITY OF AN ELECTRONIC COMPONENT SUBJECT TO IRRADIATION CONDITIONS |
PCT/EP2012/067305 WO2013034588A1 (en) | 2011-09-06 | 2012-09-05 | Method of characterising the sensitivity of an electronic component subjected to irradiation conditions |
Publications (1)
Publication Number | Publication Date |
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EP2753943A1 true EP2753943A1 (en) | 2014-07-16 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP12755864.1A Withdrawn EP2753943A1 (en) | 2011-09-06 | 2012-09-05 | Method of characterising the sensitivity of an electronic component subjected to irradiation conditions |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140203836A1 (en) |
EP (1) | EP2753943A1 (en) |
BR (1) | BR112014005117A2 (en) |
FR (1) | FR2979708B1 (en) |
WO (1) | WO2013034588A1 (en) |
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CN105677954B (en) * | 2015-12-31 | 2018-09-11 | 重庆真测科技股份有限公司 | A kind of ray detection room radiation protection design method |
US9939477B2 (en) * | 2016-06-24 | 2018-04-10 | International Business Machines Corporation | On-demand detection of electromagnetic disturbances using mobile devices |
CN111709183B (en) * | 2020-05-25 | 2023-09-12 | 西安交通大学 | Neutron tube acceleration system optimization method based on genetic algorithm |
CN111695315B (en) * | 2020-05-26 | 2023-06-23 | 电子科技大学 | CPU failure simulation method under radiation environment |
CN113156302B (en) * | 2021-03-09 | 2024-04-09 | 中国科学院新疆理化技术研究所 | Test characterization method for single event transient effect of analog circuit |
CN115420966A (en) * | 2022-06-27 | 2022-12-02 | 西北核技术研究所 | CMOS image sensor displacement damage and ionization damage synergistic effect experimental method |
CN115356609B (en) * | 2022-08-11 | 2023-05-26 | 中国科学院近代物理研究所 | Method and system for improving single event upset resistance effect of active delay filter |
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DE2914579C2 (en) * | 1979-04-10 | 1987-04-16 | Siemens AG, 1000 Berlin und 8000 München | Methods for analyzing integrated circuits |
US4816753A (en) * | 1987-05-21 | 1989-03-28 | Advanced Research And Applications Corporation | Method for reliability testing of integrated circuits |
US20040187050A1 (en) * | 2003-03-19 | 2004-09-23 | Baumann Robert Christopher | Test structure and method for accurate determination of soft error of logic components |
JP2005276360A (en) * | 2004-03-25 | 2005-10-06 | Renesas Technology Corp | Method and device for supporting error evaluation of semiconductor device |
US7535213B1 (en) * | 2005-08-29 | 2009-05-19 | Xilinx, Inc. | Method and system for prediction of atmospheric upsets in an integrated circuit |
FR2923021B1 (en) * | 2007-10-26 | 2010-02-19 | Eads Europ Aeronautic Defence | METHOD FOR DETERMINING THE SENSITIVITY OF ELECTRONIC COMPONENTS TO PARTICLES |
US8145959B2 (en) * | 2009-10-23 | 2012-03-27 | Avago Technologies Enterprise IP (Singapore) Pte. Ltd. | Systems and methods for measuring soft errors and soft error rates in an application specific integrated circuit |
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2011
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- 2012-09-05 WO PCT/EP2012/067305 patent/WO2013034588A1/en active Application Filing
- 2012-09-05 US US14/342,998 patent/US20140203836A1/en not_active Abandoned
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FR2979708B1 (en) | 2014-06-06 |
US20140203836A1 (en) | 2014-07-24 |
WO2013034588A1 (en) | 2013-03-14 |
BR112014005117A2 (en) | 2017-03-21 |
FR2979708A1 (en) | 2013-03-08 |
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