Classifications

• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/22—Absorbing filters
  • G02B5/23—Photochromic filters
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/201—Filters in the form of arrays
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
  • B29D11/00—Producing optical elements, e.g. lenses or prisms
  • B29D11/00634—Production of filters
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/28—Interference filters
  • G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/28—Interference filters
  • G02B5/285—Interference filters comprising deposited thin solid films
  • G02B5/287—Interference filters comprising deposited thin solid films comprising at least one layer of organic material
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/28—Interference filters
  • G02B5/285—Interference filters comprising deposited thin solid films
  • G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
  • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices

Definitions

• the present invention relates to the field of spectral filtering, in particular for imaging applications.
• CMOS type image sensors liquid crystal display devices or light-emitting diodes may be mentioned in particular.
• a spectral filter or a color filter makes it possible to filter the light by wavelength, so as to provide information on the intensity of the light in certain wavelengths.
• RGB red-green-blue
• a semiconductor imaging device may comprise, on a stack of semiconductor layers, a network of color filters. These are in the form of resin pellets containing pigment particles. This network is covered with a lens.
• each filter transmits the light of a color, for example the green color, and this green light is collected on a corresponding receiving element provided in the stack of layers.
• Barrier films are provided in the stack, between the colored pellets and the corresponding receiving elements, to isolate the receiving elements from each other.
• a device of this type has many disadvantages.
• the barrier films and the receiving elements may be poorly optically isolated from each other. Thus, especially when the light penetrates obliquely into the device, it can be received by a receiving element that is not the right one. This alters the Color separation function, resolution and wavelength sensitivity.
• the color filters may thus have a thickness less than that of the resin pellets containing pigments. This reduces the distance between the receiving elements and the barrier films, so as to improve the color separation function,
• Each color filter requires a specific multilayer structure which may include a large number of dielectric layers arranged alternately.
• the filtering is performed by a high-pass filter by blocking the guided modes in a one-dimensional network.
• the filtering strongly depends on the polarization of the light.
• metal / dielectric type filters comprising at least one dielectric layer formed between two thin metal films so as to form a Fabry-Perot cavity.
• the document US Pat. No. 6,031,653 describes a filter comprising two transparent plates, for example made of glass, spaced from one another to form a cavity.
• the two opposite surfaces of the transparent plates are covered fine metal films. These two metal films and the central cavity form a Fabry-Perot cavity.
• the transmission of the filter is adjusted by adjusting the thickness of the cavity.
• a portion of the incident light corresponding to the wavelength of the filter is transmitted therethrough in the form of a colored beam, while the remainder of the incident light is reflected.
• the thickness of the dielectric layer fixes the transmitted central wavelength, while the thickness of the metal layers makes it possible to adjust the spectral transmission width.
• a filter of this type is made using conventional semiconductor fabrication techniques.
• the three-color filter is made, it should then be planarized before proceeding to other steps, such as the formation of microlenses on the filter.
• the planarization step requires the addition of an additional layer, which increases the thickness of the stack. This increases the passage of photons from a lens to a neighboring pixel and thus decreases the resolution of the filter.
• the number of masking and etching steps increases with the number of desired cavities having a different thickness.
• four photolithography steps are required to obtain a three-color filter.
• No. 6,031,653 discloses a method for obtaining, from a photoresist layer and an etching step, three zones of different thicknesses. For this, a mask with several levels of gray is used. However, the materials obtained do not have good physical and chemical stability. Moreover, given the process used, the optical indices will not be homogeneous from one zone to another, even within the same zone. This is a major drawback for a filter.
• Fabry-Perot type filters have the advantage of not requiring an infrared filter, unlike imaging sensors in the visible range, because the metal layers present can reflect the infrared waves.
• This relatively small thickness is favorable for color separation and resolution.
• the object of the invention is to overcome these drawbacks by proposing a method for producing a spectral filter whose implementation is simplified, this method resulting in a filter having the same advantages as the Fabry-Perot type filters.
• the invention relates to a method for producing a filter for electromagnetic radiation comprising at least two color filters, each formed of a stack on a rigid substrate of at least one layer of dielectric and metal layers. alternation, for transmitting at least two colors, said method comprising the following steps: (a) depositing on said substrate a first layer of metal,
• step (d) printing the stack obtained by a mold applied over the entire surface of the stack and making it possible simultaneously to generate movements of material in at least two zones of the stack and thus to obtain, in said at least two zones, two different thicknesses of said first dielectric layer, these two thicknesses being different from the thickness of this dielectric layer during step (b),
• this method comprises, before step (d), two complementary steps consisting of:
• the printing step (d) also making it possible to obtain, in said at least two zones of the stack, two different thicknesses of said second dielectric layer, these two thicknesses being different from that of the second dielectric layer when step (ci).
• the method according to the invention comprises, before step (b), a complementary step (bo) of depositing on said metal layer, a dielectric layer that is not mechanically deformable.
• the method according to the invention comprises, before step (ci), a complementary step (co) of depositing on said second metal layer, a dielectric layer which is not mechanically deformable.
• the mold has a surface intended to come into contact with the entire surface of the stack during step (d), which comprises at least two zones designed to exert a different pressure on the stack.
• said at least two zones are advantageously offset in a direction perpendicular to said surface, the mold being subjected to a uniform pressure.
• the mechanically deformable dielectric is deformable at low temperature.
• the mechanically deformable dielectric is a thermoplastic resin.
• FIG. 1 illustrates the first steps of the method according to the invention, for obtaining an example of a filter
• FIG. 2 illustrates the printing step of the method according to the invention, for this filter example
• FIG. 3 comprises two curves illustrating the transmission of the two-color filter such as that illustrated in FIG. 2, as a function of the wavelength
• FIG. 4 illustrates the first steps of the method according to the invention, for obtaining another example of a filter
• FIG. 5 is a cross-sectional view of another example of a filter obtained by the method according to the invention and comprising three color filters;
• FIG. 6 comprises three curves illustrating the transmission of the filter of the type illustrated in FIG. 5, as a function of the wavelength
• FIG. 7 is a perspective view of another example of a filter obtained with the method according to the invention.
• the substrate On a substrate 10 is deposited a first metal layer 11.
• the substrate may be glass, silicon, or a multilayer material little deformed.
• the substrate 10 is rigid or is placed on a rigid counter-support, via its face 15 opposite to the first metal layer 11. Moreover, unlike Fabry-Perot type filters, the substrate does not necessarily have a flat surface.
• a dielectric layer 12 having a thickness e 0 .
• This dielectric has the property of being mechanically deformable.
• mechanically deformable material is understood to mean a material that can be deformed by the application of a pressure, this deformation being permanent. The force that must be applied to this material to deform it depends on the temperature of the material.
• the dielectric used may be a chemically stable resin, insofar as the dielectric layer is in contact with metal.
• thermoplastic resins This is particularly the case of thermoplastic resins.
• the thickness of the various layers 11 to 13 is identical throughout the stack.
• the stack 1 illustrated in FIG. 1 can constitute a filter for a color.
• the thickness e 0 of the layer 12 sets the transmitted central wavelength, as for a Fabry-Perot type filter.
• the stack 1 is here illustrated in cross section. It is thus delimited by an upper surface 14 and an opposite lower surface 15, which may for example have a square shape.
• FIG. 2 also shows in cross-section a mold 2.
• This mold 2 has a generally planar shape and is delimited by an upper surface 20 and a lower surface 21.
• This surface 21 is intended to come into contact with the upper surface 14 of the stack 1. It is of substantially identical dimensions to those of the surface 14 of the stack.
• FIG. 2 it comprises two zones 210 and 211 which are offset in a direction perpendicular to the surface 21.
• these two zones 210 and 21 1 are substantially planar and the zone 210 is projecting through
• the offset between the two zones 210 and 211 is referenced d in FIG. 2.
• these two zones have an identical surface.
• the offset value d is less than the total thickness of the stack 1 to prevent the breaking of another layer than the second metal layer.
• the mold 2 is applied against the upper surface 14 of the stack 1 and comes into contact with all of this surface, and then pressure is exerted on the mold. This pressure must be high enough to allow the plastic deformation of the dielectric.
• the mold Given the shape of the mold, its part 210 exerts on the stack a greater pressure than its other part 211. Thus, the two parts 210 and 211 of the mold simultaneously exert a determined pressure and simultaneously generate displacements of material within the dielectric layer. As a result, the stack 1, because of the pressure exerted by the mold 2, is modified and comprises two adjacent differentiated portions 100 and 101.
• the shape of the mold could be modified so that the two parts 100 and 101 are not adjacent.
• the dielectric layer 12 is more pressed than in the portion 101 of the stack facing the zone 211 of the mold.
• the layer 12 of dielectric loses a volume of deformable material which is transferred to the portion 101 which undergoes a lower pressure.
• the action of the mold 2 thus makes it possible to obtain, in the stack, a portion 100 having a dielectric layer 120 of thickness ei and a portion 101 having a dielectric layer 121 of thickness e 2 , the thicknesses ei and e 2 being different.
• Each of the parts has a polygonal shape, for example rectangular.
• the mechanical deformation of the stack 1 opposite to the upper surface 14 is minimized.
• Flow or transfer of the deformable dielectric material can be precisely controlled and predicted.
• the thicknesses e- ⁇ and e 2 of the dielectric layers 120 and 121 are perfectly controlled, such as the wavelength transmitted by each of the parts of the stack.
• the withdrawal of the mold occurs when the dielectric layers 120 and 121 have the desired thickness.
• the dielectric material is irreversibly deformed and the thicknesses ei and e ⁇ are fixed.
• the filter 3 obtained after printing of the stack 1 by the mold 2 makes it possible to filter two different colors since the thicknesses ⁇ and e 2 are different.
• the thickness of the first metal layer 11 is identical in the stack 1 and in the filter 3.
• the thickness of the metal layers 130 and 131 of the filter 3 is identical to that of the second metal layer 13.
• FIG. 2 illustrates a layer of metal 13 which has been broken and forms two layers 130 and 131.
• the layer 13 may only be deformed under the effect of the pressure exerted on the mold. Since the plastic limit of a metal is much greater than that of a resin, it is the dielectric layer that changes its volume and not the metal layer.
• the value of the pressure exerted on the mold to deform the stack 1 depends of course on the dielectric material constituting the layer 12, the temperature of the stack, as well as the thickness of the metal layer 13.
• the force to be exerted on the stack 1 will be less important if its temperature is higher than the ambient temperature.
• the chosen temperature must be lower than that at which the dielectric material is liquid. Indeed, at such a temperature, the stack would be deformed but its constituent materials would mix during this deformation and it would not lead to a filter as shown in Figure 3.
• FIG. 2 illustrates that the thicknesses ei of the dielectric layer 120 and e 2 of the dielectric layer 121 are both different from the thickness e 0 of the dielectric layer 12 initially provided in the stack 1.
• the thicknesses ei and e ⁇ fix the central wavelength transmitted by the two parts of the filter 3, it is now necessary to explain how they are chosen.
• the dimensioning of the filter is carried out using an electromagnetic calculation program.
• Examples include the Abeles matrices transfer formalism ("Principles of optics” by Born and Wolf - 1964), or the formalism of the Fourier expansion modal method or the rigorous coupled wave analysis (RCWA). English terminology) (J. Optical Society of America A 12/5 - 1068-1076, May 1995).
• This calculation program makes it possible to determine the structural parameters of the metal / dielectric stacks per pixel or for each filter dedicated to a particular color.
• This calculation involves the thicknesses of metal and dielectric layers, their index, the spectrum of incident light and the angular distribution of the incident light.
• this calculation will be used to obtain a powerful spectral filtering.
• the various parameters will be chosen to obtain a filter with a minimum of noise or with a maximum of light intensity, for example.
• the thickness of the dielectric layer can be determined in the following manner.
• the central wavelength ⁇ of a filter is determined approximately by:
• e is the thickness of the cavity, that is to say the thickness of the layer of dielectric material
• m is the order of the cavity or the order of the Fabry-Perot mode
• n is the effective index of the cavity, that is to say the refractive index of the layer 120 or 121, - ⁇ ⁇ and ⁇ 2 are the reflection phase shifts on metallic layers or mirrors and
• the order of the cavity m is a positive integer between 1 and 10. It is generally chosen equal to 1.
• phase shifts at reflection ⁇ , and ⁇ 2 are determined by the nature of the materials and the incident wavelength considered.
• Equation (E) makes it possible to determine an approximate thickness e so that the cavity is centered on a given wavelength.
• the thickness e of the cavity and therefore of the dielectric layer, as well as the thickness of the metal layers, are adjusted according to the desired performances.
• the applications one will look for example a good rendering and a maximum of transmission or a signal to maximum noise ratio.
• the adjustment of the thickness e can also be done more empirically.
• another method is to calculate, for several thicknesses e, the response of the filter and to choose the thickness e corresponding to the filter whose response has a reference peak positioned according to the specifications.
• the thickness e- 1 of the dielectric layer 120, the thickness e 2 of the dielectric layer 121, as well as the thickness of the metal layers 11, 130 and 131 are determined by calculation.
• the thickness eo will be equal to (ei + e 2 ) / 2. In the case where they are different, the thickness eo will be equal to (Si .ei + S 2 .e2) / (Si + S 2 ) where S ⁇ is the surface from the zone 210 and S 2 the area of the zone 21 1, the surface of the stack being equal to (Si + S 2 ).
• the mold is sized so that the offset d is equal
• This two-color filter is obtained from a stack of the type illustrated in FIG.
• the substrate is glass
• the first and the second metal layer 11 and 13 are made of silver and have a thickness of 30 nm.
• the thickness eo of the layer 13 of dielectric material is 120 nm.
• This material can be a thermoplastic resin that goes from the solid state to the viscous or elasto-viscous state when the temperature becomes greater than the glass transition temperature. This transformation is reversible.
• the stack obtained then undergoes a printing step with the mold 2 illustrated in FIG. 2, which makes it possible to obtain a filter in which the thicknesses of the metal layers 1 1, 130 and 131 are always 30 nm.
• the thickness ei of the layer 120 of dielectric is 90 nm and the thickness ⁇ 2 of the layer 121 of dielectric is 150 nm.
• the force applied to the mold and the duration of the pressing are chosen so as not to further deform the stack when the thickness ei is obtained at the level of the dielectric layer 120.
• a pressure of approximately 60 bar will be applied for 3 hours and at a temperature of 20 ° C., this temperature being lower than the intense transition temperature of the material of the layer 12.
• the curve C 0 illustrates the transmission of the portion 100 of the filter 3
• the curve Ci illustrates the transmission of the portion 101 of the filter 3, in both cases as a function of the wavelength.
• Each of these curves has a peak shape.
• the portion 100 of the filter 3 is centered on a wavelength of 460 nm. This is a filter for the blue color.
• the portion 101 of the filter 3 is centered on a wavelength of 650 nm. This is a filter for the red color.
• This method is therefore of a very simplified implementation compared to the methods of the state of the art, while allowing to lead to filters having the same performance as those obtained by the known methods, in particular that described in FIG. US-7,759,659.
• FIGS. 4 and 5 illustrate another embodiment of a filter obtained with the method according to the invention.
• Figure 4 illustrates, in cross-section, the stack 4 from which the filter will be obtained. It is delimited by an upper surface 48 and a lower surface 49.
• This stack is obtained by depositing a first layer 41 of metal, on a substrate 40, on the opposite side to the lower surface 49.
• the surface of the substrate is not necessarily flat.
• the substrate 40 is rigid or placed on a rigid counter-support.
• first layer 42 of dielectric On this metal layer 41 is deposited a first layer 42 of dielectric, the dielectric is not mechanically deformable, it can in particular is a mineral dielectric. On this layer 42 is deposited a first layer 43 of dielectric which is mechanically deformable.
• the elastic limit of the material constituting the layer 42 is greater than that of the constituent material of the layers deposited above the layer 42.
• a second layer 44 of metal is deposited successively on this layer 43, then a second layer 45 of mechanically non-deformable dielectric, a second layer 46 of mechanically deformable dielectric and finally, a third layer 47 of metal,
• the thickness of the layer 42 may be different from that of the layer 45 and the thicknesses of the layers 43 and 46 may be different, as illustrated in this example.
• the layers 41, 44 and 47 may have different thicknesses.
• each layer 41, 44 or 47 is uniform over the entire stack.
• a printing step is performed on the stack 4, with the mold 5.
• the mold 5 has a substantially flat shape delimited by an upper surface 50 and a lower surface 51.
• the lower surface 51 is intended to come into contact with the whole of the upper surface 48 of the stack 4. It here comprises three different zones 510, 511 and 512, of identical size. As for the filter 2 illustrated in FIG. 2, each of these three zones is offset with respect to the other in a direction perpendicular to the surface 51.
• the mold 5 is therefore applied over the entire surface 48 of the stack 4 and with a preselected pressure. This pressure is applied simultaneously to the entire surface 48. It causes the breaking of the metal layers 47 and 44, the transfer of dielectric material simultaneously within the layers 43 and 46 and the creation in the stack of three different parts 600, 601 and 602, vis-à-vis each of the mold areas 510, 511 and 512.
• the application of a pressure inside the stack 4 causes a dielectric transfer from the part 600 which is subjected to the greatest pressure, to the part 602 which is subjected to the lowest pressure.
• the thickness ei of the first and second dielectric layers 430 and 460 is smaller than the thickness e 2 of the first and second dielectric layers 431 and 461 of the portion 601 of the filter. Moreover, this thickness e 2 is itself smaller than the thickness e 3 of the first and second dielectric layers 432 and 462 of the third portion 602 of the filter 6.
• the thickness e 0 will be equal to (ei + e 2 + ⁇ e 3 ) / 3.
• the thickness e 0 will be equal to (Si.ei + S 2 .e 2 + S 3 .e 3 ) / (Si + S 2 + S 3 ), where Si, respectively S 2 , respectively S 3 is the area of the zone 600, respectively 601, respectively 602, the surface of the stack being equal to (Si + S 2 + S 3 ).
• the thickness of the other layers is not modified during the printing step.
• the function of the mechanically non-deformable dielectric layers is to adjust more precisely the thicknesses of the cavities after application of the pressure by the mold. Indeed, the pressure is uniform and the amount of resin before and after application of the pressure is the same. These layers therefore make it possible to introduce an adjustment variable.
• each of the parts 600 to 602 is polygonal and in particular rectangular. Thanks to the presence of a rigid substrate or a rigid counter-support, here again, the mechanical deformation of the substrate side is minimized. As indicated with reference to FIGS. 1 and 2, this makes it possible to control precisely the thicknesses ⁇ to e 3 as well as the wavelength transmitted by each of the parts 600 to 602.
• the two dielectric layers 43 and 46 are simultaneously deformed during the application of a pressure via the mold 5, which contributes to a good control of the thicknesses obtained in each layer. Indeed, if the layers were deformed successively, the application of a pressure on the second layer 46 would lead to an uncontrolled deformation of the first layer 43.
• This three-color filter is obtained from a stack of the type shown in FIG.
• the substrate is made of glass and the three metal layers are made of silver.
• the first metal layer 41 has a thickness of 20 nm, the second layer 44, a thickness of 36 nm and the third layer 47, a thickness of 12 nm.
• the first layer 42 of mechanically non-deformable dielectric is made of a thermoplastic or thermosetting resin or a photopolymerizable resin and has a thickness of 65 nm.
• the second layer 45 of non-deformable dielectric is made of ZnSSi0 2 and has a thickness of 65 nm.
• first and second layers 43 and 46 of mechanically deformable dielectric have a thickness e 0 of 30 nm. They can be made of an organic resin, an organometallic material or sol-gel. A sol-gel material is made of organic matter and minerals. It can be stabilized by UV or thermally.
• the stack obtained then undergoes a printing step with the mold 5 illustrated in FIG. 5, which makes it possible to obtain a filter 6 in which the thicknesses of the metal layers 41, 440, 441, 442 and 470, 471, 472 are unchanged. It is the same for the thicknesses of the first layers 42, 450, 451 and 452 of mechanically non-deformable dielectric.
• the thickness ei of the deformable dielectric layers 430 and 460 is 5 nm and the thickness e 3 of the layers 432 and 462 of deformable dielectric is 55 nm.
• the thickness ⁇ 2 of the layers 431 and 461 of deformable dielectric is equal to e 0 , that is to say to 30 nm.
• the applied mold force and the pressing time are selected to stop this step and remove the mold when the desired thickness ei is obtained at the dielectric layers 430 and 460.
• a pressure of approximately 60 bars is applied for 3 hours at a temperature of 20 ° C., this temperature being lower than the glass transition temperature of the material of the layers 43 or 46.
• the thicknesses of layers 460, 430; respectively 461, 431; respectively 462, 432 are equal.
• the invention is not limited to this example. Depending on the materials used to produce the layers 43 and 46 and / or the heating conditions of the stack, these thicknesses could be different inside the same part of the filter.
• the curve T 0 illustrates the transmission of the portion 600 of the filter 6, the curve Ti, the transmission of the portion 601 and the curve T 2 , the transmission of the portion 602, in all three cases depending on the length of the 'wave.
• FIG. 6 thus shows that the portion 600 of the filter 6 is centered on a wavelength of 400 nm. This is a filter for the green color.
• the portion 601 of the filter 6 is centered on a wavelength of 460 nm. This is a filter for the blue color. Finally, the portion 602 of the filter 6 is centered on a wavelength of 560 nm. This is a filter for the red color.
• This other example of implementation of the method according to the invention shows that it makes it possible to obtain, from the same stack, three different color filters, without any masking, etching or cleaning steps being implemented. .
• FIGS. 3 and 6 show that the filter according to FIG. 2 makes it possible to obtain layers forming a peak whose width is smaller than that of the curves obtained with the filter according to FIG. 5.
• a filter having single cavity when the intended application requires a high level of transmission and a high resolution.
• a filter comprising at least two cavities when the application requires a significant signal-to-noise ratio and a greater ease of reconstitution of the colors for the image.
• FIG. 7 illustrates another filter obtained with the method according to the invention.
• This filter is a three-color filter consisting of four filters or pixels.
• the pixel 7i is intended to filter a first color, for example the red color
• the pixels 7i and 7 2 are intended to filter the same color, for example the green color
• the pixel 7 4 is intended to filter another color, for example example the blue color.
• This filter is obtained from a stack of the type illustrated in FIG. 4, with a substrate 80, a first layer 81 of mechanically non-deformable dielectric material, a first layer of mechanically deformable dielectric material, a first layer of metal a second layer of mechanically non-deformable dielectric material, a second layer of mechanically deformable material and finally a second layer of metal.
• This thickness e 2 is greater than e 4 of the dielectric layers 824 and 854 in the pixel 7 4.
• This thickness e 2 will instead be less than the thickness ⁇ of the dielectric layers 821 and 851, in the pixel 7i.
• the thickness of the first and second deformable dielectric layers of the initial stack is appropriately chosen so that the thicknesses e 1 , e 2 and e 3 of the different pixels make it possible to adjust the color that each pixel is intended to filter.
• the method according to the invention could also make it possible to obtain filters comprising more than four pixels or else filters comprising pixels of different geometry.
• the method according to the invention can also be implemented to produce pixel arrays.
• These networks may notably consist of pixels arranged periodically, for example according to a repetition of a matrix of 4 pixels as illustrated in FIG. 7. It is then sufficient that the pressing mold is also designed with the same periodicity to obtain , after application of the pressure, the desired network.
• the method according to the invention can be implemented from stacks which are not necessarily planar. This therefore makes it possible to produce filters having a curved surface.
• a substrate having for example a lens shape, on which are deposited the different layers mentioned above.
• a suitably shaped mold is then used to make the different pixels.

Landscapes

• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Spectroscopy & Molecular Physics (AREA)
• Engineering & Computer Science (AREA)
• Health & Medical Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Ophthalmology & Optometry (AREA)
• Mechanical Engineering (AREA)
• Optical Filters (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=46724552

Family Applications (1)

Country Status (4)

Families Citing this family (8)

Family Cites Families (10)

• 2011
  • 2011-07-08 FR FR1156233A patent/FR2977684A1/fr active Pending
• 2012
  • 2012-07-04 EP EP12750483.5A patent/EP2729833A1/de not_active Withdrawn
  • 2012-07-04 US US14/130,751 patent/US20140217625A1/en not_active Abandoned
  • 2012-07-04 WO PCT/IB2012/053415 patent/WO2013008146A1/fr active Application Filing

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events