EP2727145A4 - Lead carrier with thermally fused package components - Google Patents
Lead carrier with thermally fused package componentsInfo
- Publication number
- EP2727145A4 EP2727145A4 EP12807500.9A EP12807500A EP2727145A4 EP 2727145 A4 EP2727145 A4 EP 2727145A4 EP 12807500 A EP12807500 A EP 12807500A EP 2727145 A4 EP2727145 A4 EP 2727145A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- thermally fused
- package components
- lead carrier
- fused package
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/85484—Tungsten (W) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
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- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US201161504225P | 2011-07-03 | 2011-07-03 | |
PCT/US2012/000316 WO2013006209A2 (en) | 2011-07-03 | 2012-07-03 | Lead carrier with thermally fused package components |
Publications (2)
Publication Number | Publication Date |
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EP2727145A2 EP2727145A2 (en) | 2014-05-07 |
EP2727145A4 true EP2727145A4 (en) | 2015-07-29 |
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Family Applications (1)
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---|---|---|---|
EP12807500.9A Withdrawn EP2727145A4 (en) | 2011-07-03 | 2012-07-03 | Lead carrier with thermally fused package components |
Country Status (5)
Country | Link |
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US (2) | US20130001761A1 (en) |
EP (1) | EP2727145A4 (en) |
JP (1) | JP2014518455A (en) |
CN (1) | CN103843133B (en) |
WO (1) | WO2013006209A2 (en) |
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JP5868043B2 (en) * | 2011-07-04 | 2016-02-24 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
CN103474358A (en) * | 2013-09-29 | 2013-12-25 | 华进半导体封装先导技术研发中心有限公司 | Multi-circle QFN package lead frame manufacturing method |
US20160181180A1 (en) * | 2014-12-23 | 2016-06-23 | Texas Instruments Incorporated | Packaged semiconductor device having attached chips overhanging the assembly pad |
US9842831B2 (en) * | 2015-05-14 | 2017-12-12 | Mediatek Inc. | Semiconductor package and fabrication method thereof |
US10685943B2 (en) | 2015-05-14 | 2020-06-16 | Mediatek Inc. | Semiconductor chip package with resilient conductive paste post and fabrication method thereof |
EP3396329A1 (en) * | 2017-04-28 | 2018-10-31 | Sensirion AG | Sensor package |
US9818656B1 (en) * | 2017-05-23 | 2017-11-14 | Nxp Usa, Inc. | Devices and methods for testing integrated circuit devices |
US11866042B2 (en) | 2018-08-20 | 2024-01-09 | Indian Motorcycle International, LLC | Wheeled vehicle adaptive speed control method and system |
DE102019127791B4 (en) | 2019-10-15 | 2022-09-01 | Infineon Technologies Ag | Package with separate substrate sections and method for manufacturing a package |
US11562947B2 (en) * | 2020-07-06 | 2023-01-24 | Panjit International Inc. | Semiconductor package having a conductive pad with an anchor flange |
US11569179B2 (en) * | 2020-11-19 | 2023-01-31 | Advanced Semiconductor Engineering, Inc. | Package structure including an outer lead portion and an inner lead portion and method for manufacturing package structure |
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-
2012
- 2012-07-03 WO PCT/US2012/000316 patent/WO2013006209A2/en active Application Filing
- 2012-07-03 CN CN201280039935.XA patent/CN103843133B/en not_active Expired - Fee Related
- 2012-07-03 EP EP12807500.9A patent/EP2727145A4/en not_active Withdrawn
- 2012-07-03 JP JP2014518548A patent/JP2014518455A/en active Pending
- 2012-07-03 US US13/540,903 patent/US20130001761A1/en not_active Abandoned
-
2015
- 2015-03-19 US US14/662,841 patent/US20150194322A1/en not_active Abandoned
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US7247526B1 (en) * | 1998-06-10 | 2007-07-24 | Asat Ltd. | Process for fabricating an integrated circuit package |
US20080079127A1 (en) * | 2006-10-03 | 2008-04-03 | Texas Instruments Incorporated | Pin Array No Lead Package and Assembly Method Thereof |
US20090243095A1 (en) * | 2008-03-31 | 2009-10-01 | Seiko Epson Corporation | Substrate, manufacturing method thereof, method for manufacturing semiconductor device |
US20090302466A1 (en) * | 2008-06-10 | 2009-12-10 | Seiko Epson Corporation | Semiconductor device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
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WO2013006209A3 (en) | 2013-04-11 |
JP2014518455A (en) | 2014-07-28 |
CN103843133B (en) | 2017-10-27 |
WO2013006209A2 (en) | 2013-01-10 |
CN103843133A (en) | 2014-06-04 |
US20130001761A1 (en) | 2013-01-03 |
EP2727145A2 (en) | 2014-05-07 |
US20150194322A1 (en) | 2015-07-09 |
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