EP2718974A2 - Infrared imaging device integrating an ir up-conversion device with a cmos image sensor - Google Patents

Infrared imaging device integrating an ir up-conversion device with a cmos image sensor

Info

Publication number
EP2718974A2
EP2718974A2 EP20120797523 EP12797523A EP2718974A2 EP 2718974 A2 EP2718974 A2 EP 2718974A2 EP 20120797523 EP20120797523 EP 20120797523 EP 12797523 A EP12797523 A EP 12797523A EP 2718974 A2 EP2718974 A2 EP 2718974A2
Authority
EP
European Patent Office
Prior art keywords
imaging device
layer
cis
conversion device
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP20120797523
Other languages
German (de)
French (fr)
Other versions
EP2718974A4 (en
EP2718974B1 (en
Inventor
Franky So
Do Young Kim
Bhabendra K. Pradhan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Florida
Nanoholdings LLC
University of Florida Research Foundation Inc
Original Assignee
University of Florida
Nanoholdings LLC
University of Florida Research Foundation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Florida, Nanoholdings LLC, University of Florida Research Foundation Inc filed Critical University of Florida
Publication of EP2718974A2 publication Critical patent/EP2718974A2/en
Publication of EP2718974A4 publication Critical patent/EP2718974A4/en
Application granted granted Critical
Publication of EP2718974B1 publication Critical patent/EP2718974B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/58—Photometry, e.g. photographic exposure meter using luminescence generated by light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers

Definitions

  • Figure 2 is an energy band diagram of the up-conversion device of Figure 1.
  • Figure 6 illustrates the construction of an imaging device, according to an embodiment of the invention, where a flexible up-conversion device is laminated to a CIS.
  • the hole blocking layer (I IBL) can be an inorganic HBL comprising, for example, ZnO or Ti0 2 .
  • the anode can be, but is not limited to: Indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO) or carbon nanotubes.

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Imaging devices include an IR up-conversion device on a CMOS imaging sensor (CIS) where the up-conversion device comprises a transparent multilayer stack. The multilayer stack includes an IR sensitizing layer and a light emitting layer situated between a transparent anode and a transparent cathode. In embodiments of the invention, the multilayer stack is formed on a transparent support that is coupled to the CIS by a mechanical fastener or an adhesive or by lamination. In another embodiment of the invention, the CIS functions as a supporting substrate for formation of the multilayer stack.

Description

DESCRIPTION
INFRARED IMAGING DEVICE INTEGRATING AN IR UP-CONVERSION DEVICE
WITH A CMOS IMAGE SENSOR
CROSS-REFERENCE TO RELATED APPLICATION The present application claims the benefit of U .S. Provisional Application Serial No. 61 /493,691 , filed June 6, 201 1 , which is hereby incorporated by reference herein in its entirety, including any figures, tables, or drawings.
BACKGROUND OF INVENTION
Recently, light up-conversion devices have attracted a great deal of research interest because of their potential applications in night vision, range finding, and security, as well as semiconductor wafer inspections. Early near infrared (NIR) up-conversion devices were mostly based on the heteroj unction structure of inorganic semiconductors, where a pbotodetecting and a luminescent section are in series. The up-conversion devices are mainly distinguished by the method of photodetection. Up-conversion efficiencies of devices are typically very low. For example, one NIR-to-visible light up-conversion device that integrates a light-emitting diode (LED) with a semiconductor based photodetector exhibits a maximum external conversion efficiency of only 0.048 (4.8%) W/W. A hybrid organic/inorganic up-conversion device, where an InGaAs/InP photodetector is coupled to an organic light-emitting diode (OLED), exhibits an external conversion efficiency of 0.7% W/W.
Currently, inorganic and hybrid up-conversion devices are expensive to fabricate and the processes used for fabricating these devices are not compatible with large area applications. Efforts are being made to achieve low cost up-conversion devices that have higher conversion efficiencies, although none has been identified that allow sufficient efficiency for a practical up-conversion device. For some applications, such as night vision devices, up-conversion devices having an infrared (IR) sensitizing layer with a broad absorption spectrum is very desirable. Additionally, the amplification of the signal is desirable, without having the need for moonlight or any additional illuminating source. BRIEF SUMMARY
Embodiments of the invention are directed to imaging devices comprising a transparent infrared (IR) to visible up-conversion device that has a multilayer stack structure and a CMOS image sensor (CIS). The stacked layer structure includes a transparent anode, at least one hole blocking layer, an IR sensitizing layer, at least one hole transport layer (HTL), a light emitting layer (LED), at least one electron transport layer (ETL), and a transparent cathode. Additionally the up-conversion device can include an antiretlective layer and/or an IR pass visible blocking layer. The multilayer stack can be formed on a substrate. The substrate can be the CIS. The substrate can be a support layer that is rigid and the up- conversion device is coupled to the CIS by a mechanical fastener or an adhesive, or the support layer can be flexible and the up-conversion device is laminated to the CIS to form the imaging device.
BRIEF DESCRIPTION OF DRAWINGS
Figure 1 is a schematic cross-section of an infrared-to-visible up-conversion device to be employed with a CMOS image sensor (CIS) according to an embodiment of the invention.
Figure 2 is an energy band diagram of the up-conversion device of Figure 1.
Figure 3 shows a composite of absorbance spectra for various diameter PBSe QDs thai can be combined as the infrared (IR) sensitizing layer of the imaging device according to an embodiment of the invention, where the insert shows the absorbance spectrum for a 50 nm thick film of monodispersed PbSe and a TEM image of the film.
Figure 4 shows a composite plot of conversion efficiencies for different biases for a transparent up-conversion device as illustrated in the insert under near infrared (NIR) illumination that can be employed in an embodiment of the invention.
Figure 5 illustrates the construction of an imaging device, according to an embodiment of the invention, where a ridged up-conversion device is coupled to a CIS.
Figure 6 illustrates the construction of an imaging device, according to an embodiment of the invention, where a flexible up-conversion device is laminated to a CIS.
Figure 7 illustrates an imaging device, according to an embodiment of the invention, where the up-conversion device is formed directly on a CIS substrate. DETAILED DISCLOSURE
Embodiments of the invention are directed to an up-conversion device coupling an infrared (IR) sensitizing layer with a visible light emitting layer that is formed on or coupled to a CMOS image sensor (CIS). Figure 1 is a schematic diagram of an up-conversion device comprising a multilayer stack, including an IR sensitizing layer and an organic light emitting layer (LED), which generates visible light, sandwiched between a cathode and an anode, Figure 2 shows the band diagram for an up-conversion device according to an embodiment of the invention, where a hole blocking layer is inserted between the IR sensitizing layer and the anode to reduce dark current in the up-conversion device.
In one embodiment of the invention, the up-conversion device uses a film of polydispersed PbSe quantum dots (QDs) as the IR sensitizing layer, where the various sized QDs absorb IR radiation, or IR as used herein, with various absorption maxima over a range of wavelengths from less than Ι ηι to about 2 μηι, to provide a broad spectrum sensitivity of the IR sensitizing layer.
The varying absorbance maxima for different sized QDs are illustrated in the composite spectra shown in Figure 3. The insert of Figure 3 shows the absorbance spectrum for a 50 nm thick film of monodispersed PbSe QDs having an absorbance peak at 1.3 μηι. However, as shown in Figure 4, the photon-to-photon conversion efficiency, for an up- conversion device constructed with the monodispersed QDs shown in the insert of Figure 3, does not achieve an efficiency of more than a few percent for NIR irradiation, even at a relatively high bias of 20V. As the conversion efficiency is less than 10% over this range, reasonable detection of the IR signal can be accomplished by amplification of the IR input or the visible light output signal.
In embodiments of the invention, the output signal is optimized by coupling the up- conversion device to a CIS. The electrodes of the up-conversion device are transparent, such that entering IR radiation is transported to the IR sensitizing layer, and the entering light and the generated light can reach the surface of the CIS at the light exiting surface of the up- conversion device. CIS technology is mature and is widely used for capturing images for commercially available digital cameras. These CIS have pixels having at least one ampli fier with the photodetector. By inclusion of the CIS with the up-conversion device, amplification of the IR generated image signal is achieved by coupling with the CIS, allowing the imaging device to be used for night vision applications, even when the IR irradiation source is of low intensity. Figure 2 is a schematic energy band diagram of an up-conversion device having an I sensitizing layer, which can be a broad absorbing sensitizing layer comprising polydispersed QDs, according to an embodiment of the invention. The HBL can be an organic I IBL comprising, for example, 2,9-Dimethyl-4,7-diphenyl-l ,10-phenanthroline (BCP) p- 6zs(triphenylsilyl)benzene (UGH2), 4,7-diphenyl- 1 , 10-phenanthroline (BPhen). tris-(8- hydroxy quinoline) aluminum (Alq3), 3,5'-N,N'-dicarbazole-benzene (mCP), C6o, or tris[3- (3-pyridyl)-mesityl]borane (3TPYMB). The hole blocking layer (I IBL) can be an inorganic HBL comprising, for example, ZnO or Ti02. The anode can be, but is not limited to: Indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO) or carbon nanotubes.
Materials that can be employed as hole transport layers (HTLs) include, but are not limited to: l,l-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC), N,N'-diphenyl-N,N'(2- naphthyl)-(l,l '-phenyl)-4,4' -diamine (NPB). and N,N'-diphenyl-N,N'-di(m-tolyi) benzidine (TPD). Electroluminescent light emitting (LED) materials that can be employed include, but are not limited to: /m-(2-phenylpyidine) iridium, Ir(ppy)3, poly-[2-mefhoxy, 5-(2'-ethyl- hexyloxy) phenylene vinylene] (MEH-PPV), /m-( 8 -hydroxy quinoline) aluminum (Alq3), and iridium (III) 6w-[(4,6-di-fluorophenyl)-pyridinate-N,C2']picolinate (FIrpic). Materials that can be employed as electron transport layers (ETLs) include, but are not limited to: tris[3 -(3-pyridyl)-mesityl]borane (3TPYMB), 2,9-Dimethyl-4,7-diphenyl- 1 ,10- phenanthroline (BCP), 4,7-diphenyl- 1 ,10-phenanthroline (BPhen), and tris-(8 -hydroxy quinoline) aluminum (Alq3).
The cathode can be indium tin oxide (ITO). indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), carbon nanotube, silver nanowire, or an Mg:Al layer. In one embodiment of the invention a stacked 10: 1 Mg:Ag layer with a thickness of less than 20nm is used as a transparent electrode. In one embodiment of the invention, an anti-reflective layer is situated on the exterior surface of the transparent cathode. For example, an Alq3 layer can be an anti-reflective layer that allows good transparency when the Alq3 layer is less than about 100 nm in thickness. Alternately, the antireflective layer can be a metal oxide, such as M0O3, of about 50 nm or less in thickness. In one embodiment of the invention, the visible light exit face comprises a 10: 1 Mg:Al cathode layer of about 10 nm, and an Alq3 layer of 50 nm is situated upon the cathode.
Those skilled in the art, having benefit of the current disclosure, can readily identify appropriate combinations of anodes, cathodes, LED materials, hole transport layers, HBLs, and electron transport layers by their relative work functions, HOMO and LUMO levels, layer compatibility, and the nature of any desired deposition methods used during their fabrication. In embodiments of the invention, the anode and the cathode are transparent and the multilayer stack can be formed on a transparent support that is rigid, such as glass, or is flexible, such as an organic polymer.
In one embodiment of the invention, the up-conversion device includes an IR pass visible blocking layer that is situated between a substrate and the anode. The IR pass visible blocking layer used in the up-conversion device can employ a multi dielectric stack layer. The IR pass visible blocking layer comprises a stack of dielectric films with alternating films having different refractive indices, one of high refractive index and the other of a significanily lower refractive index. An exemplary IR pass visible blocking layer is constructed of a composite of 2 to 80 alternating layers of Ta2Os (RI = 2.1) and Si02 (RI = 1 .45 ) that are 10 to 100 nm in thickness.
The coupling of a CIS to the up-conversion device to form the imaging device can be achieved in a variety of manners. In Figures 5 and 6, the up-conversion device is constructed independently of the CIS and the two devices are coupled by stacking the two devices, such that the visible light emitted by the light emitting layer activates the photodetector of pixels of the CIS and the resulting electronic signal is amplified by the amplifier in the pixel. The up-conversion device of Figure 5 comprises a pair of glass substrates and is positioned onto the CIS. The two rigid devices can be coupled, for example, by mechanical fasteners or an adhesive. In Figure 6, the up-conversion device is constructed as a transparent flexible film that is subsequently laminated to the CIS.
In some embodiments of the invention, the CIS is the image sensor and provides amplification without requiring filters for specific radiation frequency ranges or micro lenses to direct light to the photodetector of the pixels.
In another embodiment of the invention, as illustrated in Figure 7, the CIS is used as the substrate upon which the layers of the up-conversion device are constructed, resulting in a single module comprising the imaging device's up-conversion device and CIS.
All patents, patent applications, provisional applications, and publications referred to or cited herein are incorporated by reference in their entirety, including all figures and tables, to the extent they are not inconsistent with the explicit teachings of this specification.
It should be understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application.

Claims

CLAIMS We claim:
1 . An imaging device, comprising a transparent IR up-conversion device and a CMOS image sensor (CIS), wherein the transparent IR up-conversion device is a multilayer stack comprising: an anode layer; a hole blocking layer; an IR sensitizing layer; a hole transport layer; a light emitting layer; an electron transport layer; and a cathode.
2. The imaging device of claim 1 , wherein the anode comprises indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), carbon nanotubes. or silver nano wires.
3. The imaging device of claim 1 , wherein the hole blocking layer comprises Ti02, ZnO, BCP, Bphen, 3 TP Y MB, or UGH2.
4. The imaging device of claim 1 , wherein the IR sensitizing layer comprises PbSe QDs, PbS QDs, PbSe film, PbS film, InAs film, InGaAs film, Si film, Ge film, GaAs film, perylene- 3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride (PTC DA ), tin (II) phthalocyaninc (SnPc), SnPc:C6o> aluminum phthalocyanine chloride (AlPcCl), AlPcCl:C60, titanyl phthalocyanine (TiOPc), or TiOPc:C60.
5. The imaging device of claim 1, wherein the hole transport layer comprises l,l-bis[(di-4- tolylamino)phenyl]cyclohexane (TAPC), N,N'-diphenyl-N,N'(2-naphthyl)-(l, -phenyl)- 4,4'-diamine (NPB), or N,N'-diphenyl-N,N'-di(m-tolyl) benzidine (TPD).
6. The imaging device of claim 1 , wherein the light emitting layer comprises tris-{2- phenylpyidine) iridium, Ir(ppy)3, poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) pheny ene vinylene] (MEH-PPV), tm-(8-hydroxy quinoline) aluminum (Alq3), or iridium (III) bis- [(4,6-di-fluorophenyl)-pyridinate-N,C2,]picolinate (FIrpic).
7. The imaging device of claim 1, wherein the electron transport layer comprises tris[3-(3- p y r i d y 1 ) - m e s i t \ J b o r an e (3TPYMB), 2,9-Dimcthyl-4,7-diphenyl- 1 , 10-phcnanthroline (BCP), 4,7-diphenyl-l , 10-phenanthroline (BPhen), or tris-(8-hydroxy quinoline) aluminum (Alq3).
8. The imaging device of claim 1 , wherein the cathode comprises indium tin oxide (ΠΌ), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO). carbon nanotube, silver nanowire. or Mg:Al.
9. The imaging device of claim 1, wherein the cathode comprises a 10:1 Mg:Ag layer with a thickness of less than 30 nm.
10. The imaging device of claim 1, wherein the multilayer stack further comprises an anti- reflective layer on the cathode.
1 1. The imaging device of claim 9, wherein the anti-reflective layer comprises an Alq3 layer having a thickness of less than 200 nm.
12. The imaging device of claim 1, wherein the multilayer stack further comprises an IR pass visible blocking layer situated on the anode.
13. The imaging device of claim 1 1 , wherein the IR pass visible blocking layer comprises a plurality of alternating layers of materials having different refractive indexes.
14. The imaging device of claim 12, wherein the alternating layers comprise Ta205 and Si02 layers of 10 to 100 nm in thickness and the IR pass visible blocking layer comprises 2 to 80 layers.
15. The imaging device of claim 1 , wherein the CIS is the substrate for the multilayer slack.
16. The imaging device of claim 1 , wherein the multilayer stack further comprises a support layer.
17, The imaging device of claim 1 , wherein the support layer is rigid and the up-conversion device is coupled to the CIS by a mechanical fastener or an adhesive.
18. The imagin g device of claim 1, wherein the support layer is flexible and the up- conversion device is laminated to the CIS.
EP12797523.3A 2011-06-06 2012-06-06 Infrared imaging device integrating an ir up-conversion device with a cmos image sensor Active EP2718974B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161493691P 2011-06-06 2011-06-06
PCT/US2012/040980 WO2012170456A2 (en) 2011-06-06 2012-06-06 Infrared imaging device integrating an ir up-conversion device with a cmos image sensor

Publications (3)

Publication Number Publication Date
EP2718974A2 true EP2718974A2 (en) 2014-04-16
EP2718974A4 EP2718974A4 (en) 2015-05-20
EP2718974B1 EP2718974B1 (en) 2019-10-09

Family

ID=47296703

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12797523.3A Active EP2718974B1 (en) 2011-06-06 2012-06-06 Infrared imaging device integrating an ir up-conversion device with a cmos image sensor

Country Status (12)

Country Link
US (1) US20140111652A1 (en)
EP (1) EP2718974B1 (en)
JP (1) JP6309449B2 (en)
KR (1) KR102031996B1 (en)
CN (1) CN103765588B (en)
AU (1) AU2012268322A1 (en)
BR (1) BR112013031013A2 (en)
CA (1) CA2837739A1 (en)
MX (1) MX2013014311A (en)
RU (1) RU2013158842A (en)
SG (1) SG194906A1 (en)
WO (1) WO2012170456A2 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101513406B1 (en) 2006-09-29 2015-04-17 유니버시티 오브 플로리다 리서치 파운데이션, 인크. Method and apparatus for infrared detection and display
AU2011258475A1 (en) 2010-05-24 2012-11-15 Nanoholdings, Llc Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
CN103733355B (en) 2011-06-30 2017-02-08 佛罗里达大学研究基金会有限公司 A method and apparatus for detecting infrared radiation with gain
JP6147860B2 (en) 2012-09-27 2017-06-14 ロディア オペレーションズＲｈｏｄｉａ Ｏｐｅｒａｔｉｏｎｓ Method for making silver nanostructures and copolymers useful in the same
DE102013106573B4 (en) * 2013-06-24 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Radiation-emitting optoelectronic component, gas sensor with radiation-emitting optoelectronic component and method for producing a radiation-emitting optoelectronic component
US10042478B2 (en) * 2014-12-31 2018-08-07 Texas Instruments Incorporated Rear projection display with near-infrared emitting touch screen
CN104576968A (en) * 2015-02-10 2015-04-29 京东方科技集团股份有限公司 OLED apparatus and manufacturing method thereof, display substrate and display device
CA2988784A1 (en) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Monodisperse, ir-absorbing nanoparticles and related methods and devices
CN105098095B (en) * 2015-07-27 2017-05-31 京东方科技集团股份有限公司 A kind of organic light emitting diode device and preparation method thereof, display device
US10483325B2 (en) * 2015-09-11 2019-11-19 University Of Florida Research Foundation, Incorporated Light emitting phototransistor
US10651407B2 (en) 2015-09-11 2020-05-12 Nanoholdings, Llc Vertical field-effect transistor
WO2017127929A1 (en) * 2016-01-26 2017-08-03 Novadaq Technologies Inc. Configurable platform
US10869645B2 (en) 2016-06-14 2020-12-22 Stryker European Operations Limited Methods and systems for adaptive imaging for low light signal enhancement in medical visualization
JP2018078242A (en) * 2016-11-11 2018-05-17 キヤノン株式会社 Photoelectric conversion element, image pickup element having the same, and image pickup apparatus
CA3049922A1 (en) 2017-02-10 2018-08-16 Novadaq Technologies ULC Open-field handheld fluorescence imaging systems and methods
CN111048535B (en) 2018-10-15 2022-06-07 联华电子股份有限公司 image sensor
CN109742122B (en) * 2019-01-10 2021-08-06 京东方科技集团股份有限公司 Display substrate and manufacturing method thereof, and display panel
EP3691253B1 (en) * 2019-01-31 2023-11-15 Fundació Institut de Ciències Fotòniques Charge sensing device with readout of signal by detecting a change of capacitance of combined gate and quantum capacitance compared to a reference capacitancea
EP3691252B1 (en) * 2019-01-31 2023-12-13 Fundació Institut de Ciències Fotòniques Charge sensing device with gate voltage selected to operate around the charge neutrality point and tune the quantum capacitance
DE102019125429B3 (en) * 2019-09-20 2020-12-10 Motherson Innovations Company Limited Detection system and a vehicle with this system
CN110752355A (en) * 2019-10-09 2020-02-04 天津大学 Method for preparing high-sulfur-content electrode material sulfur-titanium dioxide-polypyrrole
WO2022271685A1 (en) * 2021-06-21 2022-12-29 The Board Of Regents For Oklahoma Agricultural And Mechanical Colleges Optical roic integration for oled-based infrared sensors
WO2023272572A1 (en) * 2021-06-30 2023-01-05 Huawei Technologies Co., Ltd. Photoelectric conversion element and solid-state image sensing device
CN113690375B (en) * 2021-08-30 2025-07-29 苏州英凡瑞得光电技术有限公司 Silicon-based infrared up-conversion device and preparation method thereof
CN114664968B (en) * 2022-03-15 2023-11-14 中国科学院长春光学精密机械与物理研究所 Visible-infrared dual-band photoelectric detector

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885211A (en) * 1987-02-11 1989-12-05 Eastman Kodak Company Electroluminescent device with improved cathode
JPH0216421A (en) * 1988-07-04 1990-01-19 Matsushita Electric Ind Co Ltd Photodetector
US6579629B1 (en) * 2000-08-11 2003-06-17 Eastman Kodak Company Cathode layer in organic light-emitting diode devices
JP2003083809A (en) * 2001-09-10 2003-03-19 Hamamatsu Photonics Kk Infrared-visible conversion member and infrared detection device.
WO2005001900A2 (en) * 2003-06-12 2005-01-06 Sirica Corporation Steady-state-non-equilibrium distribution of free carriers and photon energy up-conversion using same
US6943425B2 (en) * 2004-01-23 2005-09-13 Intevac, Inc. Wavelength extension for backthinned silicon image arrays
JP2005266537A (en) * 2004-03-19 2005-09-29 Stanley Electric Co Ltd Infrared transmission filter and infrared projector including the infrared transmission filter
JP4839632B2 (en) * 2005-02-25 2011-12-21 ソニー株式会社 Imaging device
KR101059919B1 (en) * 2006-03-02 2011-08-29 컴파운드 포토닉스 Optically Addressed Spatial Light Modulators and Methods
JP5164509B2 (en) * 2007-10-03 2013-03-21 キヤノン株式会社 Photoelectric conversion device, photoelectric conversion device for visible light, and imaging system using them
JP5162271B2 (en) * 2008-02-15 2013-03-13 Ａｇｃテクノグラス株式会社 Glass member with optical multilayer film and method for producing the same
WO2010070563A2 (en) * 2008-12-19 2010-06-24 Philips Intellectual Property & Standards Gmbh Transparent organic light emitting diode
DE102009018647A1 (en) * 2009-04-23 2010-10-28 Osram Opto Semiconductors Gmbh Radiation-emitting device
AU2010324764A1 (en) * 2009-11-24 2012-06-14 University Of Florida Research Foundation, Inc. Method and apparatus for sensing infrared radiation
CN101794834B (en) * 2009-12-14 2013-06-12 湖南共创光伏科技有限公司 High-efficiency thin-film solar cell provided with up-conversion fluorescent material film and film preparation method thereof
WO2012021968A1 (en) * 2010-08-18 2012-02-23 Dayan Ban Organic/inorganic hybrid optical amplifier with wavelength conversion

Also Published As

Publication number Publication date
KR102031996B1 (en) 2019-10-14
SG194906A1 (en) 2013-12-30
AU2012268322A1 (en) 2014-01-16
WO2012170456A3 (en) 2013-04-25
JP2014522578A (en) 2014-09-04
EP2718974A4 (en) 2015-05-20
US20140111652A1 (en) 2014-04-24
JP6309449B2 (en) 2018-04-11
CA2837739A1 (en) 2012-12-13
CN103765588A (en) 2014-04-30
BR112013031013A2 (en) 2016-11-29
MX2013014311A (en) 2014-01-23
RU2013158842A (en) 2015-07-20
KR20140053943A (en) 2014-05-08
EP2718974B1 (en) 2019-10-09
WO2012170456A2 (en) 2012-12-13
CN103765588B (en) 2016-08-24

Similar Documents

Publication Publication Date Title
EP2718974B1 (en) Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
US9437835B2 (en) Transparent infrared-to-visible up-conversion device
EP2577747B1 (en) Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
US9190458B2 (en) Method and apparatus for providing a window with an at least partially transparent one side emitting OLED lighting and an IR sensitive photovoltaic panel
EP2643857A1 (en) Ir photodetectors with high detectivity at low drive voltage
EP2666191A1 (en) Photodetector and upconversion device with gain (ec)
US8598573B1 (en) Infrared pass visible blocker for upconversion devices

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20131223

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20150420

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 27/14 20060101ALI20150414BHEP

Ipc: H01L 51/44 20060101ALI20150414BHEP

Ipc: H01L 51/52 20060101ALI20150414BHEP

Ipc: H01L 27/146 20060101AFI20150414BHEP

Ipc: H01L 27/28 20060101ALI20150414BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20161020

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 27/14 20060101ALI20181114BHEP

Ipc: H01L 27/28 20060101ALI20181114BHEP

Ipc: H01L 27/146 20060101AFI20181114BHEP

Ipc: C09K 11/56 20060101ALI20181114BHEP

Ipc: H01L 51/44 20060101ALI20181114BHEP

Ipc: H01L 51/52 20060101ALI20181114BHEP

INTG Intention to grant announced

Effective date: 20181128

GRAJ Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted

Free format text: ORIGINAL CODE: EPIDOSDIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTC Intention to grant announced (deleted)
INTG Intention to grant announced

Effective date: 20190417

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602012064752

Country of ref document: DE

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1189813

Country of ref document: AT

Kind code of ref document: T

Effective date: 20191115

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20191009

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1189813

Country of ref document: AT

Kind code of ref document: T

Effective date: 20191009

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200210

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200109

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200110

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200109

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200224

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602012064752

Country of ref document: DE

PG2D Information on lapse in contracting state deleted

Ref country code: IS

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200209

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20200629

Year of fee payment: 9

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

26N No opposition filed

Effective date: 20200710

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20200606

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200606

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20200630

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200630

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200630

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200606

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200606

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200630

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200630

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602012064752

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191009