EP2656358A1 - Superconductors and methods of manufacturing the - Google Patents
Superconductors and methods of manufacturing theInfo
- Publication number
- EP2656358A1 EP2656358A1 EP11854949.2A EP11854949A EP2656358A1 EP 2656358 A1 EP2656358 A1 EP 2656358A1 EP 11854949 A EP11854949 A EP 11854949A EP 2656358 A1 EP2656358 A1 EP 2656358A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- type
- cacu5
- alb2
- superconductor
- mixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/99—Alleged superconductivity
Definitions
- This invention is related to the field of high critical temperature Tc superconductivity and applications.
- this gauge model gives a unified description of superconductivity and magnetism including antiferromagnetism, pseudogap phenomenon, paramagnetic Meissner effect, Type I and Type II supeconductivity and high-Tc superconductivity.
- the doping mechanism of superconductivity is found. It is shown that the critical temperature Tc is related to the ionization energies of elements and can be computed by a formula of Tc.
- the critical temperature Tc is related to the ionization energies of elements and can be computed by a formula of Tc.
- the computational results of Tc agree with the experimental results.
- phase line h 2 3 k 2 .
- the increasing of the doping parameter x of the cuprates such as La(2-x)Sr(x)Cu04 gives the increasing of h.
- the phase plane ( k, h ) of phase diagram corresponds to the phase plane ( T, x ) of phase diagram of superconductors such as La(2-x)Sr(x)Cu04. It is shown that this increasing of h by the increasing of x gives the doping mechanism of high-Tc superconductivity.
- a method of composing superconductors with the critical temperature Tc > 300 K is disclosed. This method is from the abovementioned gauge model of high-Tc superconductivity wherein the doping mechanism of superconductivity is found.
- a class of superconductors composed by this method is the class of intermetallics with a hexagonal crystal structure consisting of three layers wherein the middle layer is as the conducting layer.
- the CaCu5-type intermetallics LaNi5 and MmNi5 are superconductors with critical temperature Tc > 300 K. It is shown that
- FIG.l shows the ( T, x) phase diagram of high-Tc superconductors such as La(2- x)Sr(x)Cu04.
- This phase diagram is derived from the abovementioned gauge model of high- Tc superconductivity and the well known experimental ( T, x) phase diagram of La(2- x)Sr(x)Cu04 in R.J. Cava, et al., Phys. Rev. Lett., 58, 408 (1987), and W.Y. Liang, et al., J. Phys. : Condens. Matter, 10, 11365 (1998) .
- the two lines a and c are the two basic phase lines for antiferromagnetism and superconductivity respectively.
- the region between a and b is the region of spin density waves and region of insulator.
- the region between b and c is the region of charge density waves and region of semiconductivity.
- the region between a and c is usually called the region of pseudogap.
- the region between c and d is the region of paramagnetic Messiner effect and is usually called the region of non- Fermi liquid (We may also call this region as the extended region of pseudogap) .
- the right side of d is the region of normal metallic state.
- the bifurcation of the phase line c gives the region of high-Tc superconductivity.
- the left side of a is the region of antiferromagnetism (The region of antiferromagnetism is also obtained by the bifurcation of the phase line a where a part of this region of antiferromagnetism obtained by bifurcation is at the outside of this phase diagram in FIG.l) .
- this line is the phase of two dimensional (2D) phenomenon and below this line is the phase of three dimensional (3D) phenomenon.
- the region in the bifurcation region of superconductivity is the region of high-Tc superconductivity and in the 3D phase the region in the bifurcation region of superconductivity is the region of conventional Type II superconductivity.
- the region between the line c and the line d is the region of Type I superconductivity (In the 2D phase this region between the line c and the line d is the extended region of pseudogap) .
- this phase diagram in FIG.l is a complete phase diagram on magnetism and superconductivity that it includes the Type I superconductivity, the conventional Type II superconductivity and the high-Tc superconductivity.
- the existence of the 3D phase in this phase diagram is important for the 2D phase high-Tc superconductivity since the existence of the 3D Type II superconductivity gives the stable existence of the 2D high -Tc superconductivity.
- This existence of the 3D Type II superconductivity is as the reservior for the stable existence of the 2D high -Tc superconductivity.
- FIG.2 shows a hexagonal unit cell of MgB2 of the AlB2-type.
- the B atoms are depicted by the black balls and the Mg atoms are depicted by the white balls.
- Mg is replaced by Ca(x)Sr(l-x) and B is replaced by Ga, it also shows a unit cell of Ca(x)Sr(l-x)Ga2 of the AlB2-type.
- FIG.3 shows two layers of the unit cell of La(l-x)Ca(x)Cu5 of the CaCu5-type. This unit cell is with the hexagonal crystal structure of three layers.
- FIG.3a is the middle layer of the hexagonal crystal structure and
- FIG.3b is the lower or upper layer of the hexagonal crystal structure.
- the Cu atoms are depicted by the black balls and the La(Ca) atoms are depicted by the white balls.
- the electrons of a cluster of B atoms in a unit cell can be coupled to the electrons of cluster of B atoms in another unit cell to form Cooper pairs.
- the Cooper pairs of s-valence (and nonvalence) electrons of B the Cooper pairs of s-valence electrons of Mg can be formed (In other words, through this channel opening the s-valence (or nonvalence) electrons of B and s-valence electrons of Mg can transit from the valence (or nonvalence) band to the conduction band from which Cooper pairs of these electrons can be formed by the attractive electron-electron interaction from the seagull vertex term) .
- the s-valence electrons of B are in the state of first ionization energy of B. Then the s-nonvalence electrons of B are in the state of second ionization energy of B. Also the s-valence electrons of Mg are in the state of first ionization energy of Mg.
- the s-valence electrons of B and Mg in the state of first ionization energy are in the opened channel of 3D superconductivity while the s-nonvalence electrons of B in the state of second ionization energy of B are for the quasi-2D high-Tc superconductivity of the B plane.
- Tc 39.53 K ( Computed value of Tc of MgB2) (4)
- intermetallic Sr(l-x)Ca(x)Ga2 can also be formed in the AlB2-type phase, with the unit cell as shown in FIG.2 where the white balls representing Sr(Ca) (replacing Mg) and the black balls representing Ga (replacing B) .
- the Cooper pairs of the 3s,3p-level electrons of Ga and Ca can be formed (In other words, through this channel opening the 3s,3p-level electrons of Ga and Ca can transit from the valence band to the conduction band from which Cooper pairs of these electrons can be formed by the attractive electron-electron interaction from the seagull vertex term) .
- this channel opening gives the 3D region of conventional superconductivity. From this 3D conventional superconductivity we have the existence of quasi-2D bifurcation region of high-Tc superconductivity given by the Ga plane.
- the 3s,3p-level electrons of Ga in the Ga plane are in the basic state of fourth ionization energy and the 3s,3p-level electrons of Ca are in the basic state of fourth ionization energy, and that other states are to be reached from these two states. Further the 3s,3p-level electrons of Ga and Ca are unified to occupy a sequence of states such that the 3s,3p-level electrons of Ga in the Ga plane occupy the higher states while the 3s,3p-level electrons of Ca occupy the lower states.
- the 3s,3p-level electrons of Ga are in the state of fifth ionization energy of Ga; and the 3s,3p-level electrons of Ca are in the basic state of fourth ionization energy.
- the 3s,3p-level electrons of Ca in the basic state of fourth ionization energy are in the opened channel of 3D superconductivity, while the 3s,3p-level electrons of Ga in the state of fifth ionization energy are for the quasi- 2D high-Tc superconductivity of the Ga plane.
- the maximum value of the energy parameter h(Ga5) of the 3s,3p-level electrons of Ga is proportional to the fifth ionization energy of Ga
- the maximum value of energy parameter h(Ca4) of the 3s,3p-level electrons of Ca is proportional to the fourth ionization energy of Sr
- the energy parameters h(Ga) and h(Ca) of the s-valence electrons of Ga and Ca are proportional to the first ionization energies of Ga and Ca respectively.
- La(l-x)Ca(x)Cu5 (0 ⁇ x ⁇ 1) .
- the intermetallics LaCu5 and CaCu5 are of the CaCu5-type as shown in D.J. Chakrabari and D.E. Laughlin, Bull. Alloy Phase Diagram, 2, 319 (1981) and P.R. Subramanian and D.E. Laughlin, Bull. Alloy Phase Diagram, 9, 316 (1988) .
- the crystal structure of La(l- x)Ca(x)Cu5 can be formed in the CaCu5-type with La(l-x)Ca(x) corresponding to Ca.
- This CaCu5-type is similar to the AlB2-type with the hexagon of six B atoms replaced by an enlarged hexagon of twelve Cu atoms and a hexagon of six Cu atoms is intercalated in one of the two Ca planes which replaces the corresponding one of the two Al planes of A1B2.
- There are eighteen Cu atoms near the faces of a unit cell of the hexagonal structure of CaCu5 (where twelve Cu atoms are from the two hexagons of six Cu atoms intercalated in the two Ca planes and six Cu atoms are from the enlarged hexagon of Cu) .
- FIG.3 shows the crystal structure of two of the three layers of a unit cell of La(l-x)Ca(x)Cu5 of CaCu5-type.
- La(l-x)Ca(x)Cu5 comes into the range of superconductivity when x o ⁇ x ⁇ xi for some xi such that x o ⁇ xi ⁇ 1.
- the d-valence electrons of Cu in the Cu plane are in the basic state of second ionization energy and the d-valence electron of La is in the basic state of third ionization energy, and that other states are to be reached from these two states.
- the d-valence electrons of Cu in the Cu plane and the d-valence electron of La are unified to occupy a sequence of states such that the d-valence electron of Cu in the Cu plane occupy the higher states while the d-valence electron of La occupy the lower state.
- the d-valence electrons of Cu are in the state of third ionization energy
- the d-valence electron of La is in the state of third ionization energy
- the s-valence electrons of La are in the basic state of first ionization energy.
- the maximum value of the energy parameter h(Cu) of the d-valence electrons of Cu is proportional to the third ionization energy of Cu
- the energy parameter h(La) of the s-valence electrons of La is proportional to the first ionization energy of La.
- Tc 315.6 K ( Computed Tc of La(l-x)Ca(x)Cu5) (12) If we include the effect of the hexagon of six Cu atoms intercalated in the La plane and suppose that this effect is the same as the enlarged hexagon of twelve Cu atoms. Then the term 45h(Cu) in Delta(LaCaCu) becomes 75h(Cu) . Then the highest critical temperature Tc of La(l-x)Ca(x)Cu5 is upped to:
- the intermetallics LaCu5 and LaNi5 are of the CaCu5-type.
- LaNi(5-5x)Cu(5x) can be formed in the CaCu5-type with Ca corresponding to La and Cu corresponding to Ni(l-x)Cu(x) .
- For the doping mechanism of superconductivity let us consider the following function:
- the d- valence electrons of Ni in the Ni(Cu) plane and the d- valence electron of La are unified to occupy a sequence of states such that the d- valence electrons of Ni in the Ni(Cu) plane occupy the higher states while the d-valence electron of La occupies the lower state.
- the d-valence electrons of Ni are in the state of third ionization energy
- the d-valence electron of La is in the state of third ionization energy
- the s- valence electrons of Ni are in the state of first ionization energy
- the s- valence electrons of La are in the state of first ionization energy.
- the maximum value of the energy parameter h(Ni) of the d-valence electrons of Ni is proportional to the third ionization energy 3395 kJ/mol of Ni
- the energy parameter h(Nil) of the s- valence electrons of Ni is proportional to the first ionization energy 737.1 kJ/mol of Ni
- the energy parameter h(La) of the s- valence electrons of La is proportional to the first ionization energy of La.
- Tc 423.321 K ( Computed Tc of LaNi(5(l-x))Cu(5x) ) (17)
- LaNi5 can be formed in the degenerate state of channel opening and thus LaNi5 can be formed as a superconductor with Tc upped to 423.321 K.
- This intermetallic LaNi5 had been used for hydrogen storage since LaNi5 is easy to be activated and can store a large amount of hydrogen under ambient pressure and in the room temperature. Since the activation and the hydrogen storage of a material is from the activity of electrons of this material, this property of LaNi5 shows that the d-valence electrons of Ni and La in LaNi5 are in the degenerate state of channel opening.
- Mm a mixture of rare earth elements such as Mm
- Mischmetal which is a mixture of rare earth elements with a large fractional part of La and the fractional part of Ce is more than
- MmNi5 a superconductor with Tc > 300 K.
- the 3s,3p-level electrons of Cu and the 4s,4p-level electrons of Sr are unified to occupy a sequence of states such that the 3s, 3p- level electrons of Cu in the Cu plane occupy the higher states while the 4s,4p-level electrons of Sr occupy the lower states.
- the 3s, 3p- level electrons of Cu are in the state of f ifth ionization energy of Cu; and the 4s,4p-level electrons of Sr are in the basic state of fourth ionization energy.
- the 4s,4p-level electrons of Sr in the basic state of fourth ionization energy are in the opened channel of 3D superconductivity, while the 3s, 3p- level electrons of Cu in the state of f ifth ionization energy are for the quasi-2D high-Tc superconductivity of the Cu plane. Then when (19) holds giving channel opening the Cooper pairs of the s,p-valence electrons of Sr can also be formed. These s- valence electrons of Sr are in the basic state of first ionization energy (and can be in the states of third and second ionization energies of valence electrons respectively) .
- the energy parameter h(Cu5) of the 3s,3p-level electrons of Cu is proportional to the f ifth ionization energy of Cu; the energy parameter h(Sr4) of the 4s, 4p- level electrons of Sr is proportional to the fourth ionization energy of Sr; and the energy parameter h(Sr) of the s- valence electrons of Sr is proportional to the f irst ionization energies Sr respectively (when the s- valence electrons of Sr is in the basic state of first ionization energy) .
- the intermetallic R(l-x) A(x)Cu5 where R denotes a rare earth element including the element Y and the mixture thereof may have two cases of high-Tc superconductivity: a case is the case of the Cu d-electron (from the effect of both A and R) and the other case is the case of the Cu s,p-electron (from the effect of A only or from the effect of both A and R) .
- both cases of superconductivity appear at some doping, the effects of superconductivity of these two cases can be combined.
- the s,p-channel connecting the two states of fourth ionization energy of the 3s,3p-electrons of Cu and the 4s,4p-electrons of Sr can be opened, and also the d-channel connecting the two states of ionization energy of the 3d-electrons of Cu and the 5d-electron of La can be opened.
- This two-channel-opening gives a freedom of electric current with a direction orthogonal to the Cu plane. From this freedom of electric current, the Cooper pairs of the 3s, 3p, 3d-electrons of Cu and the 4s,4p-electrons of Sr can be formed.
- this two-channel- opening can give two types of high-Tc superconductivity: the s,p-electron superconductivity and the d-electron superconductivity.
- This combination of s,p-electron superconductivity and d-electron superconductivity can give larger critical current and higher critical temperature.
- CaCu5-type intermetallic (23) From the properties of the CaCu5-type intermetallic (23) we have a process of manufacturing CaCu5-type superconductors, as follows.
- the powders of constituent of a CaCu5-type intermetallic (23) are first mixed in accordance with the composition. Then the mixture of powders are melted in an induction furnace under argon atmosphere at a temperature between 800 ° C. and 1600 ° C. After the materials are melted, the melt is maintained at the same temperature for 20 minutes to 1 hour to achieve better homogeneity. The melt is then poured into a mold and under pressure between the ambient pressure and 6 GPa cooled down for solidification and for the formation of said CaCu5 phase.
- R (l-x (1) )E ((l-x KDim (1-x (3) ))G( mx (3) )) (l- y)M(my)] (l+z) (24)
- R denotes rare earth elements (including Y) and mixture thereof
- this intermetallic (24) is doped to be in the degenerate state of channel opening as specified in the above examples.
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- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Powder Metallurgy (AREA)
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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CN2010106027989A CN102568694A (en) | 2010-12-23 | 2010-12-23 | High-temperature superconductor and production method thereof |
US13/253,091 US20120108438A1 (en) | 2010-11-01 | 2011-10-05 | Superconductors and methods of manufacturing the same |
PCT/IB2011/055829 WO2012093303A1 (en) | 2010-12-23 | 2011-12-20 | Superconductors and methods of manufacturing the |
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EP2656358A1 true EP2656358A1 (en) | 2013-10-30 |
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EP11854949.2A Withdrawn EP2656358A1 (en) | 2010-12-23 | 2011-12-20 | Superconductors and methods of manufacturing the |
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EP (1) | EP2656358A1 (en) |
JP (1) | JP2014510191A (en) |
CN (1) | CN102568694A (en) |
WO (1) | WO2012093303A1 (en) |
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CN107112411A (en) * | 2014-10-27 | 2017-08-29 | 量子设计材料有限公司 | High-temperature superconductor |
JP6299802B2 (en) * | 2016-04-06 | 2018-03-28 | 三菱マテリアル株式会社 | Superconducting stabilizer, superconducting wire and superconducting coil |
CN105990512B (en) * | 2016-06-24 | 2018-07-03 | 李志刚 | Polystyrene colloid ball and niobium film composite heterogenous junction structure superconductor and preparation method |
EP3583632A4 (en) * | 2017-02-14 | 2021-04-21 | California Institute of Technology | High temperature superconducting materials |
CN108425049A (en) * | 2018-06-03 | 2018-08-21 | 烟台市睿丰新材料科技有限公司 | A kind of high-strength, high-anti-friction acieral and plunger pump cylinder body casting preparation method |
CN109609831B (en) * | 2019-01-21 | 2021-01-15 | 广西慧思通科技有限公司 | 3D printing metal material and preparation method thereof |
CN111118422B (en) * | 2019-11-25 | 2021-03-05 | 北京科技大学 | Preparation method of high-tungsten high-cobalt nickel alloy fine-grain plate |
CN114974722B (en) * | 2022-07-04 | 2023-01-03 | 中山大学 | Intermetallic compound superconductor and preparation method and application thereof |
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JPS5241636B1 (en) * | 1971-01-22 | 1977-10-19 | ||
US3811185A (en) * | 1973-03-23 | 1974-05-21 | Us Navy | Method for enhancing v{11 ga thin film growth |
DE3850800T2 (en) * | 1987-04-13 | 1994-11-17 | Hitachi Ltd | Superconducting material and process for its production. |
JPH0782080A (en) * | 1993-09-13 | 1995-03-28 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | Process for producing thin film of oxide superconductor single crystal |
JP3575004B2 (en) * | 2001-01-09 | 2004-10-06 | 独立行政法人 科学技術振興機構 | Intermetallic compound superconductor composed of magnesium and boron, alloy superconductor containing the intermetallic compound, and methods of producing these |
AU2003287576A1 (en) * | 2002-11-13 | 2004-06-03 | Iowa State University Research Foundation, Inc. | Intermetallic articles of manufacture having high room temperature ductility |
JP4628041B2 (en) * | 2004-08-25 | 2011-02-09 | 新日本製鐵株式会社 | Oxide superconducting material and manufacturing method thereof |
EP1805817B1 (en) * | 2004-10-01 | 2016-11-16 | American Superconductor Corporation | Thick superconductor films with improved performance |
KR100910601B1 (en) * | 2004-10-01 | 2009-08-03 | 아메리칸 수퍼컨덕터 코포레이션 | Thick superconductor films with improved performance |
-
2010
- 2010-12-23 CN CN2010106027989A patent/CN102568694A/en active Pending
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2011
- 2011-12-20 WO PCT/IB2011/055829 patent/WO2012093303A1/en active Application Filing
- 2011-12-20 JP JP2013545611A patent/JP2014510191A/en active Pending
- 2011-12-20 EP EP11854949.2A patent/EP2656358A1/en not_active Withdrawn
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JP2014510191A (en) | 2014-04-24 |
CN102568694A (en) | 2012-07-11 |
WO2012093303A8 (en) | 2012-09-20 |
WO2012093303A1 (en) | 2012-07-12 |
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