EP2650395A2 - Procédé pour améliorer le processus de lixiviation - Google Patents

Procédé pour améliorer le processus de lixiviation Download PDF

Info

Publication number
EP2650395A2
EP2650395A2 EP13156138.3A EP13156138A EP2650395A2 EP 2650395 A2 EP2650395 A2 EP 2650395A2 EP 13156138 A EP13156138 A EP 13156138A EP 2650395 A2 EP2650395 A2 EP 2650395A2
Authority
EP
European Patent Office
Prior art keywords
leaching
polycrystalline structure
leached
depth
cutter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13156138.3A
Other languages
German (de)
English (en)
Other versions
EP2650395A3 (fr
Inventor
Federico Bellin
Vamsee Chintamaneni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varel International Ind LLC
Original Assignee
Varel International Ind LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/401,452 external-priority patent/US20130213433A1/en
Priority claimed from US13/428,635 external-priority patent/US9128031B2/en
Application filed by Varel International Ind LLC filed Critical Varel International Ind LLC
Publication of EP2650395A2 publication Critical patent/EP2650395A2/fr
Publication of EP2650395A3 publication Critical patent/EP2650395A3/fr
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C26/00Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24After-treatment of workpieces or articles
    • B22F2003/241Chemical after-treatment on the surface
    • B22F2003/244Leaching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F2005/001Cutting tools, earth boring or grinding tool other than table ware

Definitions

  • the present invention is directed generally to methods of leaching components having a polycrystalline structure. More particularly, the present invention is directed to methods of leaching components having a polycrystalline structure that include one or more cycles of a leaching process and a cleaning process, where the leaching process removes at least a portion of the catalyst materials present within the polycrystalline structure and the cleaning process removes at least a portion of the by-product materials formed during the leaching process and present within the polycrystalline structure.
  • PDC Polycrystalline diamond compacts
  • HPHT high pressure and high temperature
  • the PDC can be formed by sintering individual diamond particles together under the high pressure and high temperature (“HPHT") conditions referred to as the "diamond stable region,” which is typically above forty kilobars and between 1,200 degrees Celsius and 2,000 degrees Celsius, in the presence of a catalyst/solvent which promotes diamond-diamond bonding.
  • catalyst/solvents for sintered diamond compacts are cobalt, nickel, iron, and other Group VIII metals.
  • PDCs usually have a diamond content greater than seventy percent by volume, with about eighty percent to about ninety-eight percent being typical.
  • An unbacked PDC can be mechanically bonded to a tool (not shown), according to one example.
  • the PDC is bonded to a substrate, thereby forming a PDC cutter, which is typically insertable within, or mounted to, a downhole tool (not shown), such as a drill bit or a reamer.
  • FIG 1 shows a side view of a PDC cutter 100 having a polycrystalline diamond (“PCD”) cutting table 110, or compact, in accordance with the prior art.
  • PCD polycrystalline diamond
  • the PDC cutter 100 typically includes the PCD cutting table 110 and a substrate 150 that is coupled to the PCD cutting table 110.
  • the PCD cutting table 110 is about one hundred thousandths of an inch (2.5 millimeters) thick; however, the thickness is variable depending upon the application in which the PCD cutting table 110 is to be used.
  • the substrate 150 includes a top surface 152, a bottom surface 154, and a substrate outer wall 156 that extends from the circumference of the top surface 152 to the circumference of the bottom surface 154.
  • the PCD cutting table 110 includes a cutting surface 112, an opposing surface 114, and a PCD cutting table outer wall 116 that extends from the circumference of the cutting surface 112 to the circumference of the opposing surface 114.
  • the opposing surface 114 of the PCD cutting table 110 is coupled to the top surface 152 of the substrate 150.
  • the PCD cutting table 110 is coupled to the substrate 150 using a high pressure and high temperature (“HPHT") press.
  • HPHT high pressure and high temperature
  • other methods known to people having ordinary skill in the art can be used to couple the PCD cutting table 110 to the substrate 150.
  • the cutting surface 112 of the PCD cutting table 110 is substantially parallel to the substrate's bottom surface 154.
  • the PDC cutter 100 has been illustrated as having a right circular cylindrical shape; however, the PDC cutter 100 is shaped into other geometric or non-geometric shapes in other exemplary embodiments.
  • the opposing surface 114 and the top surface 152 are substantially planar; however, the opposing surface 114 and the top surface 152 is non-planar in other exemplary embodiments.
  • a bevel (not shown) is formed around at least a portion of the circumference of the cutting surface 112.
  • the PDC cutter 100 is formed by independently forming the PCD cutting table 110 and the substrate 150, and thereafter bonding the PCD cutting table 110 to the substrate 150.
  • the substrate 150 is initially formed and the PCD cutting table 110 is subsequently formed on the top surface 152 of the substrate 150 by placing polycrystalline diamond powder onto the top surface 152 and subjecting the polycrystalline diamond powder and the substrate 150 to a high temperature and high pressure process.
  • the substrate 150 and the PCD cutting table 110 are formed and bonded together at about the same time.
  • the PCD cutting table 110 is formed and bonded to the substrate 150 by subjecting a layer of diamond powder and a mixture of tungsten carbide and cobalt powders to HPHT conditions.
  • the cobalt is typically mixed with tungsten carbide and positioned where the substrate 150 is to be formed.
  • the diamond powder is placed on top of the cobalt and tungsten carbide mixture and positioned where the PCD cutting table 110 is to be formed.
  • the entire powder mixture is then subjected to HPHT conditions so that the cobalt melts and facilitates the cementing, or binding, of the tungsten carbide to form the substrate 150.
  • the melted cobalt also diffuses, or infiltrates, into the diamond powder and acts as a catalyst for synthesizing diamond bonds and forming the PCD cutting table 110.
  • the cobalt acts as both a binder for cementing the tungsten carbide and as a catalyst/solvent for sintering the diamond powder to form diamond-diamond bonds.
  • the cobalt also facilitates in forming strong bonds between the PCD cutting table 110 and the cemented tungsten carbide substrate 150.
  • Cobalt has been a preferred constituent of the PDC manufacturing process.
  • Traditional PDC manufacturing processes use cobalt as the binder material for forming the substrate 150 and also as the catalyst material for diamond synthesis because of the large body of knowledge related to using cobalt in these processes.
  • the synergy between the large bodies of knowledge and the needs of the process have led to using cobalt as both the binder material and the catalyst material.
  • alternative metals such as iron, nickel, chromium, manganese, and tantalum, and other suitable materials, can be used as a catalyst for diamond synthesis.
  • cobalt or some other material such as nickel chrome or iron, is typically used as the binder material for cementing the tungsten carbide to form the substrate 150.
  • some materials, such as tungsten carbide and cobalt have been provided as examples, other materials known to people having ordinary skill in the art can be used to form the substrate 150, the PCD cutting table 110, and form bonds between the substrate 150 and the PCD cutting table 110.
  • FIG 2 is a schematic microstructural view of the PCD cutting table 110 of Figure 1 in accordance with the prior art.
  • the PCD cutting table 110 has diamond particles 210 bonded to other diamond particles 210, one or more interstitial spaces 212 formed between the diamond particles 210, and cobalt 214 deposited within the interstitial spaces 212.
  • the interstitial spaces 212, or voids are formed between the carbon-carbon bonds and are located between the diamond particles 210.
  • the diffusion of cobalt 214 into the diamond powder results in cobalt 214 being deposited within these interstitial spaces 212 that are formed within the PCD cutting table 110 during the sintering process.
  • the PCD cutting table 110 is known to wear quickly when the temperature reaches a critical temperature.
  • This critical temperature is about 750 degrees Celsius and is reached when the PCD cutting table 110 is cutting rock formations or other known materials.
  • the high rate of wear is believed to be caused by the differences in the thermal expansion rate between the diamond particles 210 and the cobalt 214 and also by the chemical reaction, or graphitization, that occurs between cobalt 214 and the diamond particles 210.
  • the coefficient of thermal expansion for the diamond particles 210 is about 1.0 x 10 -6 millimeters -1 x Kelvin -1 ("mm -1 K -1 "), while the coefficient of thermal expansion for the cobalt 214 is about 13.0 x 10 -6 mm -1 K -1 .
  • the cobalt 214 expands much faster than the diamond particles 210 at temperatures above this critical temperature, thereby making the bonds between the diamond particles 210 unstable.
  • the PCD cutting table 110 becomes thermally degraded at temperatures above about 750 degrees Celsius and its cutting efficiency deteriorates significantly.
  • the PDC cutter 100 is placed within an acid solution such that at least a portion of the PCD cutting table 110 is submerged within the acid solution.
  • the acid solution reacts with the cobalt 214, or other binder/catalyst material, along the outer surfaces of the PCD cutting table 110.
  • the acid solution slowly moves inwardly within the interior of the PCD cutting table 110 and continues to react with the cobalt 214.
  • one or more by-product materials 398 ( Figure 3 ) are formed.
  • the leached depth can be more or less depending upon the PCD cutting table 110 requirements and/or the cost constraints.
  • the removal of cobalt 214 alleviates the issues created due to the differences in the thermal expansion rate between the diamond particles 210 and the cobalt 214 and due to graphitization.
  • conventional leaching processes are used to remove at least some of the catalyst 214
  • other leaching processes or catalyst removal processes can be used to remove at least some of the catalyst 214 from the interstitial spaces 212.
  • FIG 3 shows a cross-section view of a leached PDC cutter 300 having a PCD cutting table 310 that has been at least partially leached in accordance with the prior art.
  • the PDC cutter 300 includes the PCD cutting table 310 coupled to a substrate 350.
  • the substrate 350 is similar to substrate 150 ( Figure 1 ) and is not described again for the sake of brevity.
  • the substrate 350 includes a top surface 365, a bottom surface 364, and a substrate outer wall 366 extending from the perimeter of the top surface 365 to the perimeter of the bottom surface 364.
  • the PCD cutting table 310 is similar to the PCD cutting table 110 ( Figure 1 ), but includes a leached layer 354 and an unleached layer 356.
  • the leached layer 354 extends from the cutting surface 312, which is similar to the cutting surface 112 ( Figure 1 ), towards an opposing surface 314, which is similar to the opposing surface 114 ( Figure 1 ).
  • the leached layer 354 at least a portion of the cobalt 214 has been removed from within the interstitial spaces 212 ( Figure 2 ) using at least one leaching process mentioned above.
  • the leached layer 354 has been leached to a desired depth 353.
  • one or more by-product materials 398 are formed and deposited within some of the interstitial spaces 212 ( Figure 2 ) in the leached layer 354 during the leaching process.
  • the unleached layer 356 is similar to the PCD cutting table 150 ( Figure 1 ) and extends from the end of the leached layer 354 to the opposing surface 314. In the unleached layer 356, the cobalt 214 ( Figure 2 ) remains within the interstitial spaces 212 ( Figure 2 ) and has not been removed. Although a boundary line 355 is formed between the leached layer 354 and the unleached layer 356 and is depicted as being substantially linear, the boundary line 355 can be non-linear.
  • the leached PDC cutters 300 are leached to different desired depths 353 and how deep the cutter 300 has been leached has an effect on the performance of the cutter 300.
  • the conventional leaching process is very slow, and thus, leached PDC cutters 300 that have been leached using the conventional leaching process become more expensive as the leaching depth increases.
  • the cost of producing the leached PDC cutters 300 can be decreased if the rate of leaching were to increase.
  • the presence of by-product materials 398 within the leached layer 354 negatively impacts the performance of the leached PDC cutter 300.
  • Figure 1 shows a side view of a PDC cutter having a PCD cutting table in accordance with the prior art
  • FIG. 2 is a schematic microstructural view of the PCD cutting table of Figure 1 in accordance with the prior art
  • Figure 3 shows a cross-sectional view of a leached PDC cutter having a PCD cutting table that has been at least partially leached in accordance with the prior art
  • Figure 4 is a flowchart depicting a leaching method in accordance with an exemplary embodiment of the present invention.
  • Figure 5 shows a cross-sectional view of an intermediately leached PDC cutter in accordance with an exemplary embodiment of the present invention
  • Figure 6 shows a cross-sectional view of the intermediately cleaned leached PDC cutter in accordance with an exemplary embodiment of the present invention
  • Figure 7 is a cross-sectional view of a by-products removal apparatus in accordance with an exemplary embodiment
  • Figure 8 is a cross-sectional view of a by-products removal apparatus in accordance with another exemplary embodiment
  • Figure 9 is a cross-sectional view of a by-products removal apparatus in accordance with another exemplary embodiment.
  • Figure 10 is a cross-sectional view of a by-products removal apparatus in accordance with another exemplary embodiment
  • Figure 11 is a flowchart depicting a by-product materials removal verification method in accordance with an exemplary embodiment of the present invention.
  • Figure 12 is a schematic view of a capacitance measuring system in accordance to one exemplary embodiment of the present invention.
  • Figure 13 is a schematic view of a capacitance measuring system in accordance to another exemplary embodiment of the present invention.
  • Figure 14 is a data scattering chart that shows the measured capacitance values for a plurality of intermediately leached and/or intermediately cleaned cutters at different cleaning cycles according to an exemplary embodiment
  • Figure 15 shows a cross-sectional view of the cleaned leached PDC cutter having a PCD cutting table that has been leached to the desired leaching depth in accordance with an exemplary embodiment.
  • the present invention is directed generally to methods of leaching components having a polycrystalline structure. More particularly, the present invention is directed to methods of leaching components having a polycrystalline structure that include one or more cycles of a leaching process and a cleaning process, where the leaching process removes at least a portion of the catalyst materials present within the polycrystalline structure and the cleaning process removes at least a portion of the by-product materials formed during the leaching process and also present within the polycrystalline structure. Each additional leaching process and cleaning process removes catalyst materials and by-product materials, respectively, from deeper within the polycrystalline structure. The cleaning process allows the next leaching process to perform at a faster rate than if the cleaning process did not happen.
  • FIG. 4 is a flowchart depicting a leaching method 400 in accordance with an exemplary embodiment of the present invention.
  • Figure 4 shows a series of steps depicted in a certain order, the order of one or more steps can be rearranged, combined into fewer steps, and/or separated into more steps than that shown in other exemplary embodiments.
  • the leaching method 400 begins at step 410.
  • the leaching method 400 proceeds to step 420.
  • one or more PDC cutters are obtained.
  • each PDC cutter includes a polycrystalline structure having a first end and a second end.
  • the polycrystalline structure also includes one or more catalyst materials deposited therein.
  • the leaching method 400 proceeds to step 430.
  • a leaching process is performed on the polycrystalline structure of one or more PDC cutters.
  • the leaching process removes at least a portion of the catalyst materials from a leached portion of the polycrystalline structure and forms one or more by-product materials.
  • the leached portion extends from the first end to a leaching depth end, where the leaching depth end is between the first end and the second end. At least a portion of the by-product materials is deposited within the leached portion.
  • the leaching process continues until the rate of leaching decreases below a desired leaching threshold, which is determined by a user. Alternatively, the leaching process continues for a desired leaching period, which also is determined by the user.
  • the desired leaching period ranges from a few minutes to several hours or days, if desired.
  • an intermediately leached PDC cutter 500 ( Figure 5 ) is formed.
  • Figure 5 shows a cross-sectional view of the intermediately leached PDC cutter 500 in accordance with an exemplary embodiment of the present invention.
  • the intermediately leached PDC cutter 500 includes the PCD cutting table 510, which is a polycrystalline structure, coupled to the substrate 350.
  • the substrate 350 has been previously described with respect to Figure 3 and is not described again for the sake of brevity.
  • the PCD cutting table 510 is similar to the PCD cutting table 310 ( Figure 3 ), but includes a leached layer 554 and an unleached layer 556 having different depths, or thicknesses, than the leached layer 354 ( Figure 3 ) and the unleached layer 356 ( Figure 3 ), respectively, of the leached PDC cutter 300 ( Figure 3 ).
  • the leached layer 554 also is referred to herein as a leached portion 554. Specifically, the leached portion 554 has a smaller depth, or smaller thickness, than leached layer 354 ( Figure 3 ). Also, the unleached layer 556 has a greater depth, or greater thickness, than the unleached layer 356 ( Figure 3 ).
  • the depth of the leached portion 554, or an intermediate leaching depth 553 within the intermediately leached PDC cutter 500 has not yet reached the leaching depth 353 ( Figure 3 ), or desired leaching depth, of the leached PDC cutter 300 ( Figure 3 ).
  • the intermediately leached PDC cutter 500 is formed using a leaching process for a shorter time period than when forming the leached PDC cutter 300 ( Figure 3 ).
  • the leached portion 554 extends from the cutting surface 512, or first end, which is similar to the cutting surface 312 ( Figure 3 ), towards an opposing surface 514, or second end, which is similar to the opposing surface 314 ( Figure 3 ).
  • the leached portion 554 at least a portion of the cobalt 214 has been removed from within the interstitial spaces 212 ( Figure 2 ) using at least one leaching process, which is described in further detail below.
  • the leached portion 554 has been leached to the intermediate leaching depth 553.
  • one or more by-product materials 398 are formed and deposited within some of the interstitial spaces 212 ( Figure 2 ) in the leached portion 554 during the leaching process.
  • the unleached layer 556 is composed similarly as the PCD cutting table 150 ( Figure 1 ) and extends from a leaching depth end 555 of the leached portion 554 to the opposing surface 514. In the unleached layer 556, the cobalt 214 remains within the interstitial spaces 212 ( Figure 2 ) and has not been removed. Although the leaching depth end 555 is depicted as being substantially linear, the leaching depth end 555 can be non-linear.
  • the leaching process is performed a first time and removes at least a portion of the catalyst materials 214 from the PDC cutter 100 ( Figure 1 ) to form the intermediately leached PDC cutter 500.
  • the leaching process is performed using a catalyst removal apparatus according to some exemplary embodiments.
  • a catalyst removal apparatus includes a tank (not shown), or tray, having a cavity (not shown) formed therein and an acid solution (not shown) placed within the cavity.
  • This apparatus is operated using the conventional leaching process described above according to some exemplary embodiments and is not repeated again for the sake of brevity.
  • Other examples of the catalyst removal apparatus include, but are not limited to, at least those apparatuses which utilize acid leaching processes and/or electrochemical removal processes.
  • the leaching method 400 proceeds to step 440.
  • a cleaning process is performed on the leached portion 554 ( Figure 5 ) of the intermediately leached PDC cutter 500 ( Figure 5 ).
  • the cleaning process removes at least a portion of the by-product materials 398 ( Figure 5 ) from the leached portion 554 ( Figure 5 ) of the polycrystalline structure 510 ( Figure 5 ).
  • an intermediately cleaned leached PDC cutter 600 ( Figure 6 ) is formed from the intermediately leached PDC cutter 500 ( Figure 5 ) where at least some of the by-product materials 398 ( Figure 5 ) has been removed.
  • Figure 6 shows a cross-sectional view of the intermediately cleaned leached PDC cutter 600 in accordance with an exemplary embodiment of the present invention.
  • the intermediately cleaned leached PDC cutter 600 includes the PCD cutting table 610 coupled to the substrate 350.
  • the substrate 350 has been previously described with respect to Figure 3 and is not described again for the sake of brevity.
  • the PCD cutting table 610 is similar to the PCD cutting table 510 ( Figure 5 ), but includes a cleaned leached portion 654 that has had at least a portion of the by-product materials 398 removed from the leached portion 554 ( Figure 5 ).
  • PCD cutting table 610 includes the cleaned leached portion 654 and the unleached layer 556 which is disposed between the cleaned leached portion 654 and the substrate 350.
  • the cleaned leached portion 654 extends from the cutting surface 512, which has been described above with respect to Figure 5 , towards the opposing surface 514, which also has been described with respect to Figure 5 .
  • the cleaned leached portion 654 at least a portion of the cobalt 214 has been removed from within the interstitial spaces 212 ( Figure 2 ) using at least one leaching process mentioned above when compared to the PCD cutting table 110 ( Figure 1 ).
  • the cleaned leached portion 654 has been leached to the intermediate leaching depth 553.
  • one or more by-product materials 398 were formed and deposited within some of the interstitial spaces 212 ( Figure 2 ) in the leached portion 554 ( Figure 5 ) during the leaching process. However, at least a portion of these by-product materials 398 are removed from the leached portion 554 ( Figure 5 ), thereby forming cleaned leached portion 654 of the intermediately cleaned leached PDC cutter 600. The process of removing the by-product materials 398 from the leached portion 554 ( Figure 5 ) is described in further detail below.
  • these by-product materials 398 are chemical by-products, or catalyst salts, of the dissolution reaction which are trapped within the open porosity of the interstitial spaces 212 ( Figure 2 ) after the dissolution process has been completed.
  • the unleached layer 556 has been previously described with respect to Figure 5 and therefore is not repeated for the sake of brevity.
  • the cleaning process is performed a first time and removes the by-product materials from the leached portion 554 ( Figure 5 ) of the intermediately leached PDC cutter 500 ( Figure 5 ) to form the intermediately cleaned leached PDC cutter 600.
  • the cleaning process continues until a desired cleaning level is determined, which is determined by a user. Alternatively, the cleaning process continues for a desired cleaning period, which also is determined by the user. The desired cleaning period ranges from a few minutes to several hours or days, if desired.
  • the cleaning process is performed using a by-products removal apparatus according to some exemplary embodiments. There are several by-products removal apparatuses that are known or not yet known to people having ordinary skill in the art which are applicable to the present disclosure.
  • Figure 7 is a cross-sectional view of a by-products removal apparatus 700 in accordance with an exemplary embodiment.
  • the by-products removal apparatus 700 includes the intermediately leached PDC cutter 500, a covering 710, an immersion tank 720, a cleaning fluid 730, a transducer 750, and at least one power source 760.
  • the covering 710 is optional. As the cleaning fluid 730 becomes increasingly more basic or more acidic, the use of the covering 710 becomes less optional.
  • the intermediately leached PDC cutter 500 has been previously described with respect to Figure 5 and therefore is not described again in detail.
  • the intermediately leached PDC cutter 500 includes the PCD cutting table 510 and the substrate 350 that is coupled to the PCD cutting table 510.
  • the PCD cutting table 510 includes the leached portion 554 and the unleached layer 556 disposed between the leached portion 554 and the substrate 350.
  • the leached portion 554 has at least a portion of the catalyst material 214 removed from therein using a known leaching process or some other process for removing the catalyst material 214.
  • the leached portion 554 also includes by-product materials 398, which has been discussed in detail above and is not repeated again for the sake of brevity.
  • the unleached layer 556 includes catalyst material 214 which has not been removed.
  • the PCD cutting table 510 is used in the exemplary embodiment, other types of cutting tables, including PCBN compacts, are used in alternative exemplary embodiments.
  • the PCD cutting table 510 is about one hundred thousandths of an inch (2.5 millimeters) thick; however, the thickness is variable depending upon the application in which the PCD cutting table 510 is to be used.
  • the intermediately leached PDC cutter 500 is described as being used in the by-products removal apparatus 700, the leached PDC cutter 300 ( Figure 3 ) can be used in certain exemplary embodiments.
  • the by-products removal apparatus 700 includes the covering 710, which is optional.
  • the covering 710 is annularly shaped and forms a channel 712 therein.
  • the covering 710 surrounds at least a portion of a substrate outer wall 366 extending from about the perimeter of a top surface 365 of the substrate 350 towards a bottom surface 364 of the substrate 350.
  • the bottom surface 364, the top surface 365, and the substrate outer wall 366 of substrate 350 are similar to the bottom surface 154 ( Figure 1 ), the top surface 152 ( Figure 1 ), and the substrate outer wall 156 ( Figure 1 ), respectively, of the substrate 150 ( Figure 1 ) and is not repeated herein again.
  • a portion of the covering 710 also surrounds a portion of the perimeter of a PCD cutting table outer wall 576 extending from the perimeter of the opposing surface 514 towards the cutting surface 512.
  • the PCD cutting table outer wall 576 of the intermediately leached PDC cutter 500 is similar to the PCD cutting table outer wall 116 ( Figure 1 ) of the PDC cutter 100 ( Figure 1 ) and therefore is not repeated again.
  • the cutting surface 512 and at least a portion of the PCD cutting table outer wall 576 is exposed and not concealed by the covering 710 in certain exemplary embodiments.
  • the covering 710 is fabricated using epoxy resin; however, other suitable materials, such as a plastic, porcelain, or Teflon ® , can be used without departing from the scope and spirit of the exemplary embodiment.
  • the covering 710 is positioned around at least a portion of the intermediately leached PDC cutter 500 by inserting the intermediately leached PDC cutter 500 through the channel 712 of the covering 710.
  • the covering 710 is friction fitted to the intermediately leached PDC cutter 500 in some exemplary embodiments, while in other exemplary embodiments, the covering 710 is securely positioned by placing an o-ring (not shown), or other suitable known device, around the intermediately leached PDC cutter 500 and inserting the intermediately leached PDC cutter 500 and the coupled o-ring into the covering 710 so that the o-ring is inserted into a circumferential groove (not shown) formed within the internal surface of the covering 710.
  • the covering 710 is circumferentially applied onto the substrate outer wall 366 and/or the PCD cutting table outer wall 576 of the intermediately leached PDC cutter 500.
  • the covering 710 protects the surface of the substrate outer wall 366 and/or at least a portion of the PCD cutting table outer wall 576 to which it is applied from being exposed to the cleaning fluid 730, which is discussed in further detail below.
  • the immersion tank 720 includes a base 722 and a surrounding wall 724 extending substantially perpendicular around the perimeter of the base 722, thereby forming a cavity 726 therein.
  • the base 722 is substantially planar; however, the base 722 is non-planar in other exemplary embodiments.
  • the surrounding wall 724 is non-perpendicular to the base 722.
  • the immersion tank 720 is formed having a rectangular shape.
  • the immersion tank 720 is formed having any other geometric shape or non-geometric shape.
  • the immersion tank 720 is fabricated using a plastic material; however, other suitable materials, such as metal, metal alloys, or glass, are used in other exemplary embodiments.
  • the material used to fabricate the immersion tank 720 typically does not react with the cleaning fluid 730.
  • a removable lid (not shown) is used to enclose at least the intermediately leached PDC cutter 500 and the transducer 750, thereby providing a seal to the cavity 730.
  • the removable lid and the immersion tank 720 together form a pressurized vessel (not shown).
  • the power source 760 can be coupled to the lid, can be positioned outside the pressurized vessel as long as the pressurized vessel provides a port (not shown) to electrically couple the power source 760 to the transducer 750, or can be integrated with the transducer 750.
  • the cleaning fluid 730 is placed within the cavity 726 of the immersion tank 720 and filled to a depth of at least the thickness of the PCD cutting table 710.
  • the cleaning fluid 730 is de-ionized water in the exemplary embodiment.
  • the by-product materials 398 that clog the PCD open porosity is dissolvable in the cleaning fluid 730.
  • one or more additional chemicals are added to the de-ionized water to form the cleaning fluid 730 and increase the rate at which the by-product materials 398 are dissolved into the cleaning fluid 730.
  • These additional chemicals are based upon the composition of the by-product materials 398.
  • Some examples of these additional chemicals are acetic acid and/or formic acid to make the solution slightly acidic or ammonia to make the solution slightly basic.
  • any fluid or solution that is able to dissolve and/or react with the by-product materials 398 can be used for the cleaning fluid 730 in lieu of, or in addition to, the de-ionized water.
  • the cleaning fluid 730 is heated to increase the rate at which the by-product materials 398 are dissolved into the cleaning fluid 730 and hence accelerate the cleaning process.
  • the temperature of the cleaning fluid 730 can be heated up to 100 °C in the immersion tank 720 or some similar type tank. However, the temperature of the cleaning fluid 730 can be heated higher than 100 °C in the pressurized vessel mentioned above, thereby avoiding or reducing boiling of the cleaning fluid 730.
  • the transducer 750 is coupled to the intermediately leached PDC cutter 500 according to some exemplary embodiments. According to some exemplary embodiments, a portion of the transducer 750 is coupled to the bottom surface 364 of the intermediately leached PDC cutter 500; however the transducer 750 can be coupled to a portion of the substrate outer wall 366 in other exemplary embodiments. Alternatively, the transducer 750 is coupled to a portion of the immersion tank 720 or positioned within the cleaning fluid 730, thereby producing vibrations which propagate through the cleaning fluid 730 and into the intermediately leached PDC cutter 500. The transducer 750 also is coupled to a power source 760 using an electrical wire 761.
  • the transducer 750 converts electric current supplied from the power source 760 into vibrations that are propagated through the intermediately leached PDC cutter 500.
  • the transducer 750 is shaped into a cylindrical shape and has a circumference sized approximately similarly to the circumference of the bottom surface 364. However, the shape and size of the transducer 750 varies in other exemplary embodiments.
  • the transducer 750 is a piezoelectric transducer; however, the transducer 750 is a magnetostrictive transducer in other exemplary embodiments.
  • the transducer 750 operates at a frequency of about forty kilohertz (kHz) in some exemplary embodiments.
  • the transducer 750 operates at a frequency ranging from about twenty kHz to about fifty kHz; yet, in still other exemplary embodiments, the operating frequency is higher or lower than the provided range.
  • the transducer 750 supplies ultrasonic vibrations 755 which propagate through the intermediately leached PDC cutter 500 and facilitate the by-product materials 398 removal from the interstitial spaces 212 ( Figure 2 ) formed within the PCD cutting table 510, which is further described below.
  • the cleaning fluid 730 penetrates into the leached portion 554 and dissolves the by-product materials 398 that are clogging the PCD open porosity.
  • the by-product materials 398 are highly soluble in the cleaning fluid 730.
  • the transducer 750 and the power source 760 are included in the by-product removal apparatus 700. The power source 760 is turned “on" to facilitate removal of the by-product materials 398 from the PCD cutting table 510 back into the cleaning fluid 730.
  • the transducer 750 produces ultrasonic vibrations 755 into the intermediately leached PDC cutter 500 which promotes the removal of the by-product materials 398 from the PCD cutting table 510 back into the cleaning fluid 730.
  • the operating frequency of the transducer 750 and the intensity of the elastic waves emitted from the transducer 750 can be adjusted to maximize the amount of vibrations 755 delivered to the PCD cutting table 510.
  • the ultrasonic vibrations 755 mechanically improve the cleaning fluid 730 circulation rate into and out of the interstitial spaces 212 ( Figure 2 ), thereby providing fresh cleaning fluid 730 into the interstitial spaces 212 ( Figure 2 ).
  • the cleaning fluid 730 is able to proceed deeper into the PCD cutting table 510 and dissolve more by-product materials 398 located within additional interstitial voids 212 ( Figure 2 ).
  • the intermediately leached PDC cutter 500 becomes the intermediately cleaned leached PDC cutter 600 ( Figure 6 ).
  • a single intermediately leached PDC cutter 500 is shown to be immersed in the cleaning fluid 730, several intermediately leached PDC cutters 500 can be immersed into the cleaning fluid 730 to remove the by-product materials 398 from each of the PCD cutting tables 510 simultaneously in other exemplary embodiments.
  • Figure 8 is a cross-sectional view of a by-products removal apparatus 800 in accordance with another exemplary embodiment.
  • the by-products removal apparatus 800 is similar to the by-products removal apparatus 700 ( Figure 7 ) except that the transducer 750 of the by-products removal apparatus 800 is submerged within the cleaning fluid 730.
  • the transducer 750 transmits ultrasonic vibrations 755 into the cleaning fluid 730, which then transmits the vibrations 755 into the PCD cutting table 510.
  • the ultrasonic vibrations 755 facilitate removal of the by-product materials 398, or salt, within the interstitial void 212 ( Figure 2 ) and increase the recirculation rate of the fresh cleaning fluid 730 into the PCD cutting table 510.
  • the by-product material 398 removal rate is substantially increased using the transducer 750.
  • the transducer 750 is coupled to a portion of the immersion tank 720.
  • Figure 9 is a cross-sectional view of a by-products removal apparatus 900 in accordance with another exemplary embodiment.
  • the by-products removal apparatus 900 is similar to the by-products removal apparatus 700 ( Figure 7 ) except that the cavity 726 of the immersion tank 720 is covered by a lid 990 in the by-products removal apparatus 900.
  • the lid 990 provides a seal to the cavity 726, thereby allowing the cavity 726 to be pressurized and the cleaning fluid 730 to be heated at higher temperatures, such as above 100 °C. These higher temperatures increase the cleaning rate of the by-products materials 398 ( Figure 5 ).
  • a gasket (not shown) positioned between the lid 990 and the immersion tank 720 can be used to facilitate providing the seal.
  • the sealed lid 990 and the immersion tank 720 collectively form the pressurizable vessel 910.
  • the power source 760 can be coupled to the lid 990 via a clamp 930, can be positioned outside the pressurizable vessel 910 as long as the pressurized vessel 910 provides a port (not shown) to electrically couple the power source 760 to the transducer 750, or can be integrated with the transducer 750.
  • the other exemplary embodiments and/or modifications as described with respect to Figure 7 above are applicable to the present exemplary embodiment.
  • Figure 10 is a cross-sectional view of a by-products removal apparatus 1000 in accordance with another exemplary embodiment.
  • the by-products removal apparatus 1000 is similar to the by-products removal apparatus 800 ( Figure 8 ) except that the cavity 726 of the immersion tank 720 is covered by a lid 990 in the by-products removal apparatus 1000.
  • the lid 990 provides a seal to the cavity 726, thereby allowing the cavity 726 to be pressurized and the cleaning fluid 730 to be heated at higher temperatures, such as above 100 °C. These higher temperatures increase the cleaning rate of the by-products materials 398 ( Figure 5 ).
  • a gasket (not shown) positioned between the lid 990 and the immersion tank 720 can be used to facilitate providing the seal.
  • the sealed lid 990 and the immersion tank 720 collectively form the pressurizable vessel 910.
  • the power source 760 can be coupled to the lid 990 via a clamp 930, can be positioned outside the pressurizable vessel 910 as long as the pressurized vessel 910 provides a port (not shown) to electrically couple the power source 760 to the transducer 750, or can be integrated with the transducer 750.
  • the other exemplary embodiments and/or modifications as described with respect to Figures 7 and above are applicable to the present exemplary embodiment.
  • the effectiveness of the by-product materials removal process is optionally verified.
  • the intermediately cleaned leached PDC cutter 600 is further cleaned in either the same cleaning fluid 730 or a fresh cleaning fluid 730 until the desired level is reached.
  • multiple cleaning cycles are performed on the intermediately leached PDC cutter 500 in some exemplary embodiments to fully, or substantially, remove the by-product materials 398.
  • Figure 11 is a flowchart depicting a by-product materials removal verification method 1100 in accordance with an exemplary embodiment of the present invention.
  • each intermediately leached PDC cutter includes a polycrystalline structure having a leached portion and an unleached layer.
  • the leached portion includes one or more by-product materials.
  • the by-product materials removal verification method 1100 proceeds to step 1130.
  • step 1130 at least a portion of the by-product materials from the intermediately leached PDC cutter is removed thereby forming an intermediately cleaned leached PDC cutter.
  • the by-product materials are removed from the intermediately leached PDC cutter using the by-products removal apparatus 700 ( Figure 7 ), the by-products removal apparatus 800 ( Figure 8 ), the by-products removal apparatus 900 ( Figure 9 ), the by-products removal apparatus 1000 ( Figure 10 ), or some other by-products removal apparatus that becomes known to other people having ordinary skill in the art with the benefit of the present disclosure.
  • a cleaning fluid and a transducer are used to remove at least a portion of the by-product materials from the intermediately leached PDC cutter.
  • the by-product materials removal verification method 1100 proceeds to step 1140.
  • step 1140 at least one capacitance value for each of the intermediately cleaned leached PDC cutter is measured.
  • the intermediately cleaned leached PDC cutter has been described above in detail with respect to Figure 6 and therefore is not described again for the sake of brevity.
  • the capacitance value is determined using a capacitance measuring system, as described below.
  • FIG 12 is a schematic view of a capacitance measuring system 1200 in accordance to one exemplary embodiment of the present invention.
  • the capacitance measuring system 1200 includes a capacitance measuring device 1210, the intermediately cleaned leached PDC cutter 600, a first wire 1230, and a second wire 1240.
  • the intermediately leached PDC cutter 500 ( Figure 5 ) is used in lieu of the intermediately cleaned leached PDC cutter 600.
  • certain components have been enumerated as being included in the capacitance measuring system 1200, additional components are included in other exemplary embodiments.
  • intermediately cleaned leached PDC cutter 600 a different component, such as the PCD cutting table 610 alone or other component that includes another type of intermediately clean leached polycrystalline structure or intermediately leached polycrystalline structure, is used in lieu of the intermediately cleaned leached PDC cutter 600.
  • the cleaned leached PDC cutter 600 has been previously described with respect to Figure 6 and is not repeated again herein for the sake of brevity.
  • the capacitance measuring device 1210 is a device that measures the capacitance of an energy storage device, which is the intermediately cleaned leached PDC cutter 600, or the intermediately leached PDC cutter 500 ( Figure 5 ), in the instant exemplary embodiment.
  • Capacitance is a measure of the amount of electric potential energy stored, or separated, for a given electric potential.
  • a common form of energy storage device is a parallel-plate capacitor.
  • the intermediately cleaned leached PDC cutter 600 is an example of the parallel-plate capacitor.
  • the capacitance of the energy storage device is typically measured in farads, or nanofarads.
  • the capacitance measuring device 1210 is a multi-meter; however, other capacitance measuring devices known to people having ordinary skill in the art are used in one or more alternative exemplary embodiments.
  • the multi-meter 1210 includes a positionable dial 1212, a plurality of measurement settings 1214, a display 1216, a positive terminal 1218, and a negative terminal 1219.
  • the positionable dial 1212 is rotatable in a clockwise and/or counter-clockwise manner and is set to one of several available measurement settings 1214.
  • the positionable dial 1212 is set to a nanofaraday setting 1215 so that the multi-meter 1210 measures capacitance values.
  • the display 1216 is fabricated using polycarbonate, glass, plastic, or other known suitable material and communicates a measurement value, such as a capacitance value, to a user (not shown) of the multi-meter 1210.
  • the positive terminal 1218 is electrically coupled to one end of the first wire 1230, while the negative terminal 1219 is electrically coupled to one end of the second wire 1240.
  • the first wire 1230 is fabricated using a copper wire or some other suitable conducting material or alloy known to people having ordinary skill in the art.
  • the first wire 1230 also includes a non-conducting sheath (not shown) that surrounds the copper wire and extends from about one end of the copper wire to an opposing end of the cooper wire. The two ends of the copper wire are exposed and are not surrounded by the non-conducting sheath.
  • an insulating material also surrounds the copper wire and is disposed between the copper wire and the non-conducting sheath. The insulating material extends from about one end of the non-conducting sheath to about an opposing end of the non-conducting sheath.
  • first wire 830 is electrically coupled to the positive terminal 1218, while the opposing end of the first wire 1230 is electrically coupled to the cutting surface 512 of the intermediately cleaned leached PDC cutter 600.
  • the opposing end of the first wire 1230 is electrically coupled to the cutting surface 512 in one of several methods.
  • the first wire 1230 is electrically coupled to the cutting surface 512 using one or more fastening devices (not shown), such as a clamp, or using an equipment (not shown) that supplies a force to retain the first wire 1230 in electrical contact with the cutting surface 512.
  • a clamp (not shown) is coupled to the opposing end of the first wire 1230 and a conducting component (not shown), such as aluminum foil, is coupled to, or placed in contact with, the cutting surface 512.
  • the clamp is electrically coupled to the conducting component, thereby electrically coupling the first wire 1230 to the cutting surface 512. Additional methods for coupling the first wire 1230 to the cutting surface 512 can be used in other exemplary embodiments.
  • the second wire 1240 is fabricated using a copper wire or some other suitable conducting material or alloy known to people having ordinary skill in the art.
  • the second wire 1240 also includes a non-conducting sheath (not shown) that surrounds the copper wire and extends from about one end of the copper wire to an opposing end of the cooper wire. The two ends of the copper wire are exposed and are not surrounded by the non-conducting sheath.
  • an insulating material also surrounds the copper wire and is disposed between the copper wire and the non-conducting sheath. The insulating material extends from about one end of the non-conducting sheath to an opposing end of the non-conducting sheath.
  • one end of the second wire 1240 is electrically coupled to the negative terminal 1219, while the opposing end of the second wire 1240 is electrically coupled to a bottom surface 364, which is similar to the bottom surface 154 ( Figure 1 ), of the intermediately cleaned leached PDC cutter 600.
  • the second wire 1240 is electrically coupled to the bottom surface 364 in a similar manner as the first wire 1230 is electrically coupled to the cutting surface 512.
  • a circuit 1205 is completed using the multi-meter 1210, the first wire 1230, the intermediately cleaned leached PDC cutter 600, and the second wire 1240.
  • the current is able to flow from the positive terminal 1218 of the multi-meter 1210 to the cutting surface 512 of the intermediately cleaned leached PDC cutter 600 through the first wire 1230.
  • the current then flows through the intermediately cleaned leached PDC cutter 600 to the bottom surface 364 of the intermediately cleaned leached PDC cutter 600.
  • the multi-meter 1210 is turned on, a voltage differential exists between the cutting surface 512 and the bottom surface 364.
  • the current then flows from the bottom surface 364 to the negative terminal 1219 of the multi-meter 1210 through the second wire 1240.
  • the capacitance measurement of the intermediately cleaned leached PDC cutter 600 is determined when the value displayed on the display 1216 reaches a peak value or remains constant for a period of time.
  • the use, analyzing of the results, and other information regarding the capacitance measuring system 1200 is described in U.S. Patent Application No. 13/401,188 , entitled “Use of Capacitance to Analyze Polycrystalline Diamond” and filed on February 21, 2012, which has been incorporated by reference herein.
  • FIG. 13 is a schematic view of a capacitance measuring system 1300 in accordance to another exemplary embodiment of the present invention.
  • the capacitance measuring system 1300 includes the capacitance measuring device 1210, the intermediately cleaned leached PDC cutter 600, the first wire 1230, the second wire 1240, a first conducting material 1310, a second conducting material 1320, a first insulating material 1330, a second insulating material 1340, and an Arbor Press 1350.
  • the intermediately leached PDC cutter 500 ( Figure 5 ) is used in lieu of the intermediately cleaned leached PDC cutter 600.
  • the first conducting material 1310 and the second conducting material 1320 are similar to one another in certain exemplary embodiments, but are different in other exemplary embodiments. According to one exemplary embodiment, the conducting materials 1310, 1320 are fabricated using aluminum foil; however, other suitable conducting materials can be used.
  • the first conducting material 1310 is positioned adjacently above and in contact with the cutting surface 512.
  • the second conducting material 1320 is positioned adjacently below and in contact with the bottom surface 364.
  • the first conducting material 1310 and the second conducting material 1320 provide an area to which the first wire 1230 and the second wire 1240, respectively, make electrical contact. Additionally, the first conducting material 1310 and the second conducting material 1320 assist in minimizing contact resistance with the cutting surface 512 and the bottom surface 364, respectively, which is discussed in further detail below.
  • the first conducting material 1310 and the second conducting material 1320 are the same shape and size; while in other exemplary embodiments, one of the conducting materials 1310, 1320 is a different shape and/or size than the other conducting material 1310, 1320.
  • the first insulating material 1330 and the second insulating material 1340 are similar to one another in certain exemplary embodiments, but are different in other exemplary embodiments. According to one exemplary embodiment, the insulating materials 1330, 1340 are fabricated using paper; however, other suitable insulating materials, such as rubber, can be used.
  • the first insulating material 1330 is positioned adjacently above and in contact with the first conducting material 1310.
  • the second insulating material 1340 is positioned adjacently below and in contact with the second conducting material 1320.
  • the first insulating material 1330 and the second insulating material 1340 provide a barrier to direct current flow only through a circuit 1305, which is discussed in further detail below.
  • the first insulating material 1330 and the second insulating material 1340 are the same shape and size; while in other exemplary embodiments, one of the insulating materials 1330, 1340 is a different shape and/or size than the other insulating material 1330, 1340. Additionally, in certain exemplary embodiments, the insulating materials 1330, 1340 is larger in size than its corresponding conducting material 1310, 1320. However, one or more of the insulating materials 1330, 1340 is either larger or smaller than its corresponding conducting material 1310, 1320 in alternative exemplary embodiments.
  • the Arbor Press 1350 includes an upper plate 1352 and a base plate 1354.
  • the upper plate 1352 is positioned above the base plate 1354 and is movable towards the base plate 1354.
  • the base plate 1354 is movable towards the upper plate 1352.
  • the first insulating material 1330, the first conducting material 1310, the intermediately cleaned leached PDC cutter 600, the second conducting material 1320, and the second insulating material 1340 are positioned between the upper plate 1352 and the base plate 1354 such that the second insulating material 1340 is positioned adjacently above and in contact with the base plate 1354.
  • the upper plate 1352 is moved towards the base plate 1354 until the upper plate 1352 applies a downward load 1353 onto the cutting surface 512 of the intermediately cleaned leached PDC cutter 600.
  • the downward load 1353 is applied, the first conducting material 1310 is deformed and adapted to the rough and very stiff cutting surface 512, thereby minimizing contact resistance between the first conducting material 1310 and the cutting surface 512 and greatly improving the capacitance measurement consistency.
  • the base plate 1354 also applies an upward load 1355 onto the bottom surface 364 of the intermediately cleaned leached PDC cutter 600.
  • the downward load 1353 is equal to the upward load 1355.
  • the downward load 1353 and the upward load 1355 is about one hundred pounds; however, these loads 1353, 1355 range from about two pounds to about a critical load.
  • the critical load is a load at which the intermediately cleaned leached PDC cutter 600 is damaged when applied thereto.
  • the second insulating material 1340 is positioned on the base plate 1354, the second conducting material 1320 is positioned on the second insulating material 1340, the intermediately cleaned leached PDC cutter 600 is positioned on the second conducting material 1320, the first conducting material 1310 is positioned on the intermediately cleaned leached PDC cutter 600, and the first insulating material 1330 is positioned on the first conducting material 1310.
  • the upper plate 1352 is moved towards the first insulating material 1330 until the downward load 1353 is applied onto the intermediately cleaned leached PDC cutter 600.
  • one or more components are coupled to the upper plate 1352 prior to the upper plate 1352 being moved towards the base plate 1354.
  • Arbor Press 1350 is used in the capacitance measuring system 1300, other equipment capable of delivering equal and opposite loads to each of the cutting surface 512 and the bottom surface 364 of the intermediately cleaned leached PDC cutter 600 can be used in other exemplary embodiments.
  • One end of the first wire 1230 is electrically coupled to the positive terminal 1218 of the multi-meter 1210, while the opposing end of the first wire 1230 is electrically coupled to the first conducting material 1310, which thereby becomes electrically coupled to the cutting surface 512 of the intermediately cleaned leached PDC cutter 600.
  • a clamp 1390 is coupled to the opposing end of the first wire 1230 which couples the first wire 1230 to the first conducting material 1310.
  • One end of the second wire 1240 is electrically coupled to the negative terminal 1219 of the multi-meter 1210, while the opposing end of the second wire 1240 is electrically coupled to the second conducting material 1320, which thereby becomes electrically coupled to the bottom surface 364 of the intermediately cleaned leached PDC cutter 600.
  • a clamp (not shown), similar to clamp 1390, is coupled to the opposing end of the second wire 1240, which couples the second wire 1240 to the second conducting material 1320.
  • the circuit 1305 is completed using the multi-meter 1210, the first wire 1230, the first conducting material 1310, the intermediately cleaned leached PDC cutter 600, the second conducting material 1320, and the second wire 1340.
  • the current is able to flow from the positive terminal 1218 of the multi-meter 1210 to the cutting surface 512 of the intermediately cleaned leached PDC cutter 600 through the first wire 1230 and the first conducting material 1310.
  • the current then flows through the intermediately cleaned leached PDC cutter 600 to the bottom surface 364 of the intermediately cleaned leached PDC cutter 600.
  • the capacitance measurement of the intermediately cleaned leached PDC cutter 600 is determined when the value displayed on the display 1216 reaches a peak value or remains constant for a period of time. The use, analyzing of the results, and other information regarding the capacitance measuring system 1300 is described in U.S. Patent Application No. 13/401,188 , entitled “Use of Capacitance to Analyze Polycrystalline Diamond” and filed on February 21, 2012, which has been incorporated by reference herein.
  • the by-product materials removal verification method 1100 proceeds to step 1150.
  • step 1150 removal of at least a portion of the by-product materials from the intermediately cleaned leached PDC cutter and measuring at least one capacitance value for at least one of the intermediately cleaned leached PDC cutter is continued until the capacitance value is at a stable lower limit capacitance value.
  • the removal of at least a portion of the by-product materials has been described with respect to step 1130 and the measuring of the capacitance values has been described with respect to step 1140.
  • the stable lower limit capacitance value is the capacitance value of an intermediately cleaned leached PDC cutter at which the measured capacitance value does not further decrease upon further removal of by-product materials from the intermediately cleaned leached PDC cutter, i.e. further cleaning of the intermediately cleaned leached PDC cutter.
  • the stable lower limit capacitance value is illustrated in Figure 14 .
  • Figure 14 is a data scattering chart 1400 that shows the measured capacitance values 1411 for a plurality of intermediately leached and/or intermediately cleaned cutters 500, 600 at different cleaning cycles according to an exemplary embodiment.
  • the data scattering chart 1400 includes a cutter number axis 1420 and a capacitance axis 1410.
  • the cutter number axis 1420 includes the number of the cutters 1422 tested along with a cleaning cycle number 1423.
  • the capacitance axis 1410 includes values for the measured capacitance 1411.
  • a capacitance data point 1430 is obtained by measuring the capacitance of the intermediately leached and/or intermediately cleaned cutter 500, 600, or intermediately leached and/or intermediately cleaned component, using the capacitance measuring system 1200 ( Figure 12 ), the capacitance measuring system 1300 ( Figure 13 ), or a similar type system.
  • Each capacitance data point 1430 for each cutter number 1422, with its respective cleaning cycle number 1423, is plotted on the data scattering chart 1400.
  • Each cutter number 1422 has its capacitance measured a plurality of times. In some exemplary embodiments, five capacitance data points 1430 are obtained for each cutter number 1422, however, the number of measurements is greater or fewer in other exemplary embodiments.
  • a twenty-five percentile marking 1450, a fifty percentile marking 1452 (or average), and a seventy-five percentile marking 1454 are shown in the chart 1400 for each cutter number 1422.
  • the area between the twenty-five percentile marking 1450 and the seventy-five percentile marking 1454 is shaded.
  • the amount of data scattering is ascertained using this data scattering chart 1400 and can be one or more of a differential between the highest and lowest capacitance measurements 1411 for each cutter number 1422, a range between the twenty-five percentile marking 1450 and the seventy-five percentile marking 1454, or some similar observation made from the data scattering chart 1400.
  • the first set of cutter numbers 1424 which has not yet been cleaned, shows a larger data scattering of capacitance values 1411 than when compared to the second set of cutter numbers 1425, which has been cleaned once for one hour using the by-products removal apparatus 700 ( Figure 7 ), the by-products removal apparatus 800 ( Figure 8 ), the by-products removal apparatus 900 ( Figure 9 ), or the by-products removal apparatus 1000 ( Figure 10 ).
  • the second set of cutter numbers 1425 which has been cleaned once for one hour using the by-products removal apparatus 700 ( Figure 7 ), the by-products removal apparatus 800 ( Figure 8 ), the by-products removal apparatus 900 ( Figure 9 ), or the by-products removal apparatus 1000 ( Figure 10 ), shows a larger data scattering of capacitance values 1411 than when compared to the third set of cutter numbers 1426, which has been cleaned a second time for another one hour using the by-products removal apparatus 700 ( Figure 7 ), the by-products removal apparatus 800 ( Figure 8 ), the by-products removal apparatus 900 ( Figure 9 ), or the by-products removal apparatus 1000 ( Figure 10 ).
  • the third set of cutter numbers 1426 exhibit a minimal, or negligible, amount of data scattering of capacitance values 1411.
  • the capacitance values 1411 of the third set of cutter numbers 1426 is the stable lower limit capacitance value 1429 in this exemplary embodiment.
  • the capacitance values 1411 of the fourth set of cutter numbers would be the stable lower limit capacitance value.
  • the stable lower limit capacitance value 1429 is reached, i.e. there is minimal to no data scattering of capacitance values 1411, the intermediately cleaned leached PDC cutters 600 are effectively cleaned and verified as such.
  • step 1160 the by-product materials removal verification method 1100 ends.
  • the leaching method 400 proceeds to step 450.
  • the leaching process and the cleaning process continue iteratively and alternatingly on the intermediately cleaned leached PDC cutter 600 ( Figure 6 ) until the depth of the leached portion 554 ( Figure 5 ) reaches a desired leaching depth 353 ( Figure 3 ).
  • the leaching process and the cleaning process are not performed alternatingly, but one or more processes are performed consecutively before the other process is performed.
  • a cleaned leached PDC cutter 1500 ( Figure 15 ) is formed.
  • the cleaned leached PDC cutter 1500 is formed in a shorter duration than if it were to be formed using a single leaching process and a single cleaning process on the PDC cutter 100 ( Figure 1 ).
  • Figure 15 shows a cross-sectional view of the cleaned leached PDC cutter 1500 having a PCD cutting table 1510 that has been leached and cleaned to the desired leaching depth 353 in accordance with an exemplary embodiment.
  • the cleaned leached PDC cutter 1500 has been exposed to two or more leaching cycles and at least one cleaning cycle.
  • the cleaned leached PDC cutter 1500 includes the PCD cutting table 1510 coupled to the substrate 350.
  • the substrate 350 has been previously described above with respect to Figure 3 and therefore is not described again for the sake of brevity.
  • the PCD cutting table 1510 is similar to the PCD cutting table 310 ( Figure 3 ), but has had at least a portion of the by-product materials 398 removed from a cleaned leached layer 1554.
  • the cleaned leached layer 1554 is similar to leached layer 354 ( Figure 3 ) except that at least a portion of the by-product materials 398 is removed from the leached layer 354 ( Figure 3 ) to form the cleaned leached layer 1554.
  • PCD cutting table 1510 includes the cleaned leached layer 1554 and the unleached layer 356 which is disposed between the cleaned leached layer 1554 and the substrate 350.
  • the cleaned leached layer 1554 extends from the cutting surface 312, which has been described above with respect to Figure 3 , towards the opposing surface 314, which also has been described with respect to Figure 3 .
  • the cleaned leached layer 1554 has been removed from within the interstitial spaces 212 ( Figure 2 ) using at least one leaching process mentioned above when compared to the PCD cutting table 110 ( Figure 1 ).
  • the cleaned leached layer 1554 has been leached to the desired leaching depth 353.
  • one or more by-product materials 398 were formed and deposited within some of the interstitial spaces 212 ( Figure 2 ) in the leached layer 354 ( Figure 3 ) during the leaching process.
  • at least a portion of these by-product materials 398 are removed from the leached layer 354 ( Figure 3 ), thereby forming leached layer 1554.
  • boundary line 355 is formed between the cleaned leached layer 1554 and the unleached layer 356 and is depicted as being substantially linear, the boundary line 355 can be non-linear.
  • the leaching method proceeds to step 460.
  • the leaching method 400 ends.
  • a cleaned leached PDC cutter which is substantially free of by-product materials, or catalyst metal salts, has a superior wear abrasion resistance with an increased thermal stability.
  • the apparatus and methods disclosed herein minimizes the detrimental effects of the leaching reaction by-product materials.
  • a cleaning cycle occurring intermittently between successive leaching cycles allows the subsequent leaching cycle to proceed at a faster rate. Removing at least a portion of the by-product materials trapped within the leached portion has a beneficial effect of allowing the leaching solution to infiltrate into the polycrystalline structure faster and deeper.
  • the leaching method 400 allows the leaching depths to be reached in much shorter time periods or to reach the entire thickness of the polycrystalline structure in a few day.
  • Conventional leaching process typically takes several weeks of treatment time when leaching the entire depth of the polycrystalline structure.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Processing Of Solid Wastes (AREA)
  • Manufacture And Refinement Of Metals (AREA)
EP13156138.3A 2012-02-21 2013-02-21 Procédé pour améliorer le processus de lixiviation Withdrawn EP2650395A3 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/401,452 US20130213433A1 (en) 2012-02-21 2012-02-21 Method to Improve the Performance of a Leached Cutter
US13/428,635 US9128031B2 (en) 2012-02-21 2012-03-23 Method to improve the leaching process
US13/482,322 US20130248258A1 (en) 2012-03-23 2012-05-29 Leached Cutter And Method For Improving The Leaching Process

Publications (2)

Publication Number Publication Date
EP2650395A2 true EP2650395A2 (fr) 2013-10-16
EP2650395A3 EP2650395A3 (fr) 2015-02-18

Family

ID=47891390

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13156138.3A Withdrawn EP2650395A3 (fr) 2012-02-21 2013-02-21 Procédé pour améliorer le processus de lixiviation

Country Status (1)

Country Link
EP (1) EP2650395A3 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100095602A1 (en) * 2008-10-20 2010-04-22 Smith International, Inc. Techniques and materials for the accelerated removal of catalyst material from diamond bodies
WO2013003333A1 (fr) * 2011-06-28 2013-01-03 Varel International Ind., L.P. Élimination électrochimique de catalyseur assistée par des ultrasons pour des matériaux extra-durs

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100095602A1 (en) * 2008-10-20 2010-04-22 Smith International, Inc. Techniques and materials for the accelerated removal of catalyst material from diamond bodies
WO2013003333A1 (fr) * 2011-06-28 2013-01-03 Varel International Ind., L.P. Élimination électrochimique de catalyseur assistée par des ultrasons pour des matériaux extra-durs

Also Published As

Publication number Publication date
EP2650395A3 (fr) 2015-02-18

Similar Documents

Publication Publication Date Title
US9128031B2 (en) Method to improve the leaching process
US20170043378A1 (en) Apparatus to improve the performance of a leached cutter
EP2631313A2 (fr) Procédé pour améliorer les performances d'un outil de coupe lixivié
EP2631638B1 (fr) Utilisation de la capacité pour analyser un diamant polycristallin
US9469914B2 (en) Ultrasound assisted electrochemical catalyst removal for superhard materials
EP2631640A2 (fr) Utilisation de courants de Foucault pour analyser un diamant polycristallin
EP2631637A2 (fr) Utilisation de la capacité et de courants de Foucault pour analyser un diamant polycristallin
US9423436B2 (en) Method and apparatus to assess the thermal damage caused to a PCD cutter using capacitance spectroscopy
KR20120034659A (ko) 절삭 요소, 절삭 요소의 제조 방법 및, 절삭 요소를 포함하는 공구
US9377428B2 (en) Non-destructive leaching depth measurement using capacitance spectroscopy
EP1483428B1 (fr) Electrode de diamant
EP2650395A2 (fr) Procédé pour améliorer le processus de lixiviation
WO2013188688A2 (fr) Outils de coupe au diamant polycristallin (pcd) présentant une meilleure résistance et une meilleure stabilité thermique
EP3066482B1 (fr) Méthode d'évaluation de l'endommagement des extrémités d'une haveuse par spectroscopie de capacité
EP2947452A1 (fr) Mesure de profondeur de lixiviation non destructive au moyen de spectroscopie de capacité
RU2628593C2 (ru) Высокотемпературная обработка при высокой скорости нагрева резцов pdc

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RIC1 Information provided on ipc code assigned before grant

Ipc: E21B 10/46 20060101ALI20150114BHEP

Ipc: C22C 26/00 20060101AFI20150114BHEP

Ipc: E21B 10/567 20060101ALI20150114BHEP

17P Request for examination filed

Effective date: 20150708

RBV Designated contracting states (corrected)

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20170901