EP2501844A4 - Crystal growth apparatus and method - Google Patents

Crystal growth apparatus and method

Info

Publication number
EP2501844A4
EP2501844A4 EP09850317.0A EP09850317A EP2501844A4 EP 2501844 A4 EP2501844 A4 EP 2501844A4 EP 09850317 A EP09850317 A EP 09850317A EP 2501844 A4 EP2501844 A4 EP 2501844A4
Authority
EP
European Patent Office
Prior art keywords
crystal growth
growth apparatus
crystal
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09850317.0A
Other languages
German (de)
French (fr)
Other versions
EP2501844A1 (en
Inventor
Weiguo Liu
A Grant Elliot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AXT Inc
Original Assignee
AXT Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AXT Inc filed Critical AXT Inc
Publication of EP2501844A1 publication Critical patent/EP2501844A1/en
Publication of EP2501844A4 publication Critical patent/EP2501844A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP09850317.0A 2009-10-08 2009-10-08 Crystal growth apparatus and method Withdrawn EP2501844A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2009/060072 WO2011043777A1 (en) 2009-10-08 2009-10-08 Crystal growth apparatus and method

Publications (2)

Publication Number Publication Date
EP2501844A1 EP2501844A1 (en) 2012-09-26
EP2501844A4 true EP2501844A4 (en) 2013-08-07

Family

ID=43857038

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09850317.0A Withdrawn EP2501844A4 (en) 2009-10-08 2009-10-08 Crystal growth apparatus and method

Country Status (3)

Country Link
EP (1) EP2501844A4 (en)
JP (1) JP2013507313A (en)
WO (1) WO2011043777A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020115871A1 (en) * 2018-12-06 2020-06-11 住友電気工業株式会社 METHOD FOR MANUFACTURING GaAs SUBSTRATE AND GaAs SINGLE CRYSTAL GROWTH DEVICE
WO2023209867A1 (en) * 2022-04-27 2023-11-02 住友電気工業株式会社 Group iii-v compound semiconductor single crystal substrate and manufacturing method therefor
TWI833617B (en) * 2023-03-24 2024-02-21 國立勤益科技大學 Crystal growth device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6334897B1 (en) * 1998-03-31 2002-01-01 Japan Energy Corporation Method of manufacturing compound semiconductor single crystal
JP2004277266A (en) * 2003-03-19 2004-10-07 Hitachi Cable Ltd Method for manufacturing compound semiconductor single crystal

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62148389A (en) * 1985-12-23 1987-07-02 Nippon Mining Co Ltd Method for growing single crystal
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
CN102797032A (en) * 2001-07-05 2012-11-28 Axt公司 Method and apparatus for growing semiconductor crystals with rigid support, carbon doping and resistivity control and thermal gradient control
DE102007026298A1 (en) * 2007-06-06 2008-12-11 Freiberger Compound Materials Gmbh Arrangement and method for producing a crystal from the melt of a raw material and single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6334897B1 (en) * 1998-03-31 2002-01-01 Japan Energy Corporation Method of manufacturing compound semiconductor single crystal
JP2004277266A (en) * 2003-03-19 2004-10-07 Hitachi Cable Ltd Method for manufacturing compound semiconductor single crystal

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BUNGER T ET AL: "Development of a vertical gradient freeze process for low EPD GaAs substrates", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 80, no. 1-3, 22 March 2001 (2001-03-22), pages 5 - 9, XP004234652, ISSN: 0921-5107, DOI: 10.1016/S0921-5107(00)00573-0 *
See also references of WO2011043777A1 *

Also Published As

Publication number Publication date
EP2501844A1 (en) 2012-09-26
WO2011043777A1 (en) 2011-04-14
JP2013507313A (en) 2013-03-04

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