EP2481092A2

EP2481092A2 - Solar cell

Info

Publication number: EP2481092A2
Application number: EP10754287A
Authority: EP
Inventors: Martin Hermle; Hubert Hauser; Pauline Berger; Benedikt BLÄSI; Marius Peters; Jan Christoph Goldschmidt
Original assignee: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV; Albert Ludwigs Universitaet Freiburg
Current assignee: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV; Albert Ludwigs Universitaet Freiburg
Priority date: 2009-09-21
Filing date: 2010-09-13
Publication date: 2012-08-01
Also published as: WO2011032672A2; CN102648529A; US20120227805A1; WO2011032672A3; DE102009042018A1

Abstract

The invention relates to a solar cell, comprising a silicon layer which has a dopant of a first dopant type, a front designed for the coupling in of light, and a rear, the silicon layer being a doped base layer, at least one textured layer and a metal layer being arranged on the rear of the silicon layer, optionally on additional intermediate layers, and the textured layer comprising a rear texture in at least a section thereof which rear texture is designed as an optical diffraction structure. It is essential that at least one textured intermediate structure (3, 23, 33) is arranged between the textured layer (2, 22, 32) and the metal layer (4, 24, 34), the metal layer (4, 24, 34) being connected to the textured layer (2, 22, 32) and/or to the base layer (1, 21, 31) in an electrically conducting manner. The textured intermediate structure (3, 23, 33) is substantially transparent at least in the wavelength range of 800 nm to 1100 nm and has a refractive index n smaller than the refractive index of the textured layer in at least this wavelength range. The refractive index of all layers arranged between the base layer (1, 21, 31) and the textured intermediate layer (3, 23, 33) deviates by not more than 30% relative to the refractive index of silicon and the layer which is arranged directly on the rear of the base layer (1, 21, 31) is a passivation layer which passivates the surface with respect to the recombination of minority charge carriers.

Description

solar cell

description

The invention relates to a solar cell according to claim 1, comprising a silicon layer, which has a doping of a first doping type, a front side designed for the light coupling and a rear side.

Such semiconductor silicon solar cells serve to convert electromagnetic radiation incident on the solar cell into electrical energy. For this purpose, light is coupled into the solar cell via the front side designed for the coupling of light, so that electron hole pairs are generated by absorption in the silicon layer. For this purpose, the silicon layer has a base doping and at an interface to an oppositely doped emitter, a pn junction forms, at which the charge carrier separation takes place. Via electrical contacts of the oppositely doped regions, the solar cell can be connected to an external circuit.

Essential for the efficiency of a solar cell is in addition to the electrical properties such as the recombination properties of the surfaces and the material quality of the semiconductor layers, the light output continues. The luminous efficiency denotes the ratio between electromagnetic radiation incident on the front side and the total generation of electron-hole pairs due to the light coupling in the solar cell.

Since silicon is an indirect semiconductor and thus has lower absorption values for incident radiation than direct semiconductors, the extension of the light path within the solar cell is particularly relevant in the case of silicon solar cells in order to increase the luminous efficacy: due to the low absorption properties, a part of the longer-wavelength light penetrates the SiO.sub.2 - larzelle and strikes the back of the solar cell. To increase the luminous efficacy, it is therefore known to design the back mirror, so that

CONFIRMATION COPY a light beam striking the rear side is reflected towards the front again.

One way to improve internal backside reflection is to use sub-micron diffraction patterns. These cause the reflected photons at the backside to be reflected only in certain diffraction directions. In the ideal case, the first diffraction order is nearly parallel to the back surface, so that the light path of the back-diffracted photons in silicon is greatly increased.

Thus, in the case of a solar cell of WO 92/14270 formed from a plurality of applied layers, it is known to apply a texture layer to a p-doped silicon layer, which has a texture designed as an optical diffraction structure and, in turn, to apply a metal layer to this texture layer.

This structure represents an optimization of the properties for layered structure silicon solar cells, wherein the optimization takes place with respect to light rays which impinge perpendicularly on the front side of the layer structure.

However, in the application of silicon solar cells, light typically also strikes the front side of the solar cell in non-perpendicular angles of incidence. In addition, typically in high-efficiency wafer silicon solar cells by a front side texture, for example in the form of inverted pyramids, the light input and thus increases the luminous efficacy, since impinging rays hit even at first reflection on at least one other front surface. In addition, this results in an oblique coupling of the light beams, so that compared to a flat surface, a longer light path is achieved when first passing through the silicon layer to the impact on the back. However, these rays mostly do not strike the backside perpendicularly.

Furthermore, in the case of highly efficient wafer silicon solar cells, the electrical properties, in particular the recombination properties, must also be taken into account. Forming a backside texture as an optical diffraction structure results in an increase in the surface area of the texture boundary layer the back, so that an increased total surface recombination at the backside adversely affects the overall efficiency of the solar cell.

The invention is therefore based on the object to provide a solar cell in which the back is improved in terms of optical and electrical properties. Furthermore, the solar cell according to the invention should be characterized by a simple manufacturability.

This object is achieved by a solar cell according to claim 1, advantageous embodiments of the solar cell according to the invention can be found in claims 2 to 16.

The solar cell according to the invention comprises a silicon layer which has a doping of a first doping type. This doping of the first doping type is thus the base doping, i. H. The silicon layer is a base layer. Furthermore, the solar cell has a front coupling designed for the coupling in of light and a rear side.

At least one texture layer and one metal layer are arranged on the rear side of the silicon layer.

The texture layer has a backside texture, which is formed as an optical diffraction structure, at least in a partial area.

Such a diffraction structure is also referred to as a diffractive structure, i. H. that the optical properties of this texture are described essentially not by ray optics, but by wave optics. The use of diffractive textures on the back side of a solar cell is known in principle and is described, for example, in WO 92/14270 or C. Heine, R.H. Morf Submicrobess gratings for Solar energy applications, Applied Optics, VL. 34, no. 14, May 1995.

It is essential that at least one texturing intermediate structure is arranged between the texture layer and the metal layer. The metal layer is electrically conductively connected to the texture layer and / or to the base layer. Furthermore, the texturing intermediate structure is at least in the wavelength range 800 nm to 1 .100 nm, preferably at least substantially transparent in the wavelength range 600 nm to 1 .200 nm.

In this case, essentially transparent means that the absorption coefficient α of the texturing intermediate structure is at most 10 ⁴ cm ^-1 , preferably at most 1 0 ³ cm ^-1 , furthermore preferably at most 10 cm ² ^1. This condition applies to each wavelength λ within the range relevant wavelength range, preferably at least for the wavelength range 800 nm to 1, 100 nm, furthermore preferably at least in the wavelength range 600 nm to 1 .200 nm.

The texturing intermediate structure has at least in the wavelength range 800 nm to 1. 1 00 nm, preferably at least in the wavelength range 600 nm to 1 .200 nm has a refractive index which is smaller than the refractive index of the texture layer.

The refractive index (also called refractive index) is usually wavelength-dependent. A ratio of different refractive indices nn ₂ thus means that for each wavelength λ within the relevant wavelength range the ratio between n ^ k) and n ₂ (h) applies in each case. The same applies to the absorption coefficient a.

It is within the scope of the invention that optionally between the layers mentioned further intermediate layers are attached. It is essential that, starting from the silicon layer, the layers are arranged in the order silicon layer, texture layer, textured intermediate structure, metal layer.

Furthermore, in the case of the solar cell according to the invention, that layer which is arranged directly on the rear side of the base layer is a passivation layer passivating the surface with respect to the recombination of minority charge carriers. This means that there is a low minority surface recombination velocity at the interface between the base layer and the layer directly on the base layer. The refractive index of all layers of the solar cell according to the invention arranged between the base layer and the texturing intermediate differs by a maximum of 30% from the refractive index of silicon, it being possible for the calculation indices of said layers to differ from one another within said range. The aforementioned condition on the refractive indices relates to the relevant wavelength range, preferably at least the wavelength range 800 nm to 1 100 nm, furthermore preferably at least in the wavelength range 600 nm to 1 .200 nm.

By this alignment of the refractive indices of all layers between the base layer and the intermediate texturing structure, a reflection at the interfaces of these layers is reduced, so that the optical behavior of the backside is essentially determined by the diffraction structure and no undesired optical effects occur at other interfaces.

The solar cell according to the invention thus differs from the previously known solar cells in that at the back. a texture layer, a diffraction structure is formed and between the texture layer and metal layer at least one in said wavelength range substantially transparent texturing intermediate structure with a refractive index is less than that of the texture layer. This has the advantage that an excitation of surface plasmons in the metal layer is reduced by the absorbed radiation or other unwanted absorption processes are prevented and on the other hand that on the texture side of the texture layer, the evanescent wave of the diffracted radiation in the optically transparent Texture substructure already decreases in intensity. As a result, a very high optical quality of the rear side of the solar cell with respect to the diffraction of radiation in said wavelength range is achieved.

This makes it possible for the first time to use such a diffraction structure in a highly efficient silicon solar cell, in particular in combination with a refractive texture on the front side of the solar cell, d. H. a texture that is essentially described by ray optics.

Furthermore, the electrical properties and the optical properties of the rear side of the solar cell are separated in the solar cell according to the invention, since the optical properties are essentially determined by the texture of the texture layer in combination with the texturing intermediate structure and the metal layer, whereas the electrical properties are essentially determined by the passivation layer. As a result, a nearly independent optimization of the two properties is possible, so that a total of a solar cell with a very high optical and electrical quality is achieved on the back.

Preferably, the texturing intermediate structure consists of a single layer. However, it is also within the scope of the invention that the texturing intermediate structure consists of several individual layers and / or of a composite material, which is a spatial composite of different materials.

Advantageously, the texturing intermediate structure and / or further layers arranged between the texture layer and the metal layer reduce the unevenness caused by the backside texture such that the metal layer is applied on a surface which is less uneven with respect to the surface of the backside texture, preferably applied to a substantially planar plane.

In this preferred embodiment, the solar cell on the rear side thus has both a texture layer with a texture designed as a diffraction structure and a substantially planar metal layer. As a result, the aforementioned advantages for increasing the optical quality are further enhanced because the excitation of Oberflächenplasmonen is prevented in the metal.

The height differences of a texture formed as a diffraction pattern are typically greater than 50 nm. In particular, it is therefore advantageous that the texturing intermediate structure and optionally further layers arranged between the texture layer and the metal layer have a total thickness of at least 50 nm, preferably that the texturing intermediate structure has a thickness of at least 50 nm.

In order to prevent a negative influence on the optical quality and / or the electrical properties of the solar cell, preferably only the texturing intermediate structure is arranged between the texture layer and the metal layer. For optimizing the optical quality of the rear side of the solar cell according to the invention, it is advantageous that the refractive index of all layers arranged between the base layer and the texturing intermediate deviates at most by 10%, preferably at most 5%, furthermore preferably at most 1%, from the refractive index of silicon. The aforementioned condition on the refractive indices relates to the relevant wavelength range, preferably at least the wavelength range 800 nm to 1 100 nm.

Preferably, the passivation layer arranged directly on the rear side of the base layer is designed such that the surface recombination velocity for minority charge carriers is less than 0 ⁴ cm / s, preferably less than 10 ³ cm / s, in particular less than 10 ² cm / s.

Preferably, the passivation layer is undoped to achieve a low surface recombination rate for minority carriers.

In particular, the formation of the passivation layer of hydrogenated amorphous silicon (Si: H) is advantageous, with a particularly low surface recombination for minority carriers in the formation of the passivation layer of intrinsic, amorphous, hydrogenated silicon (i-a-Si: H) is achieved. The use of hydrogenated amorphous silicon layers in solar cells is known per se and described, for example, in M. Taguchi et al. DOI 10.1002 / pip.646.

Such a passivation layer combines the advantages of a very high passivation quality and an almost identical refractive index with silicon.

The solar cell according to the invention can be formed in several advantageous embodiments, wherein the emitter can be arranged at different positions of the solar cell. Likewise, the formation of multiple emitters is within the scope of the invention. The emitter may be formed as a separate layer or as a diffusion within the base layer. It is essential that the doping type of the emitter be opposite to the doping type of the base. Doping types here are the n-doping and the p-doping opposite thereto. In a first variant of an advantageous embodiment of the solar cell according to the invention, the texture layer is formed as an emitter layer and doped opposite to the base layer. Furthermore, at least one undoped pn intermediate layer is arranged between the emitter layer and the base layer, via which layer a pn junction is formed between the emitter layer and the base layer. The emitter layer is formed at least with regard to the charge carrier majorities of the emitter layer as an electrically conductive layer.

In this preferred embodiment, the emitter is thus arranged on the rear side of the solar cell according to the invention and formed as a texture layer. The pn-intermediate layer leads to a considerable recombination reduction at the pn junction between emitter layer and base layer. Preferably, the pn-intermediate layer is therefore designed as a passivation layer as described above.

The contacting of the base layer preferably takes place via metallic contacting structures applied on the front side of the solar cell, for example in the form of the comb-like contacting grid known per se.

Preferably, no further intermediate layers are arranged in the layer sequence base layer / pn interlayer / emitter layer, in order to avoid a disturbance in the formation of the pn junction.

The pn intermediate layer preferably has a thickness of less than 10 nm, in particular a thickness of about 5 nm.

The texturing intermediate structure is preferably designed to be electrically conductive, so that a large-area contacting of the emitter layer takes place via the texturing intermediate structure to the metal layer. In particular, it is advantageous in this case to form the texturing intermediate structure in a manner known per se from electrically conductive oxide (TCO), as described, for example, in M. Taguchi et al. DOI 10.1002 / pip.646.

In a further second variant of a preferred embodiment, the texturing intermediate structure is electrically insulating and the metal layer is at several local areas of the back at least with the base layer electrically connected. In this advantageous embodiment, the metal layer thus constitutes the metallic contacting of the base / Preferably, the metal layer directly adjoins the base layer at a plurality of local areas.

In this advantageous embodiment, a contacting of the base thus takes place at a plurality of local regions of the rear side. In this way, on the one hand, a low series resistance of the base contact can be achieved and, on the other hand, a small total surface recombination can be achieved at the contacted areas, due to the contacting of the backside only in some local areas.

In particular, it is advantageous in this case to form the rear-side contacting by means of local melting, for example as described in DE 100 46 170 A1 (so-called laser fired contacts, LFC).

Advantageously, in this preferred embodiment, the texture layer is applied directly to the base layer, in particular, the texture layer is advantageously formed as a passivation layer as described above. In this way, a high electrical quality of the rear side is achieved by the passivating effect of the texture layer at the interface to the base layer on the one hand and the low area coverage with the local contact areas with regard to the total area of the rear side.

In this preferred embodiment, it is advantageous to form the texture layer undoped, in particular from intrinsic, amorphous, hydrogenated silicon, and / or to form the texturing intermediate structure from silicon dioxide or SiN or Al ₂ O ₃ .

In a further third variant of an advantageous embodiment, the texture layer and the base layer have a doping of the same doping type. Furthermore, at least one undoped base-texture intermediate layer is arranged between the texture layer and the base layer, and the texture intermediate structure is formed as an electrically conductive layer, at least with regard to the charge carrier majorities of the texture layer. In this advantageous embodiment, we thus achieved the passivating effect of the back of the base layer by the undoped base-texture intermediate layer, which is nevertheless electrically conductive at least with regard to the charge carrier majorities. This can be achieved, for example, by forming the base-texture intermediate layer with a thickness of less than 10 nm, in particular with a thickness of approximately 5 nm. The base-texture intermediate layer is preferably in the form of a passivation layer as described above, in particular preferably of intrinsic, amorphous, hydrogenated silicon.

This embodiment has the advantage that at the same time a passivation of the base and a charge carrier for majorities conductive layer is generated, which can then be contacted over the entire surface.

Preferably, in this advantageous embodiment, the texture layer is doped higher than the base layer, so that forms a so-called back surface field (BSF) on the back of the solar cell and thereby additionally lowered the recombination speed at the back and thus the e- lektrische goodness of the back the solar cell is increased.

The texturing intermediate structure is preferably formed of transparent, electrically conductive oxide (TCO). This results in the advantage that an electrical contact between the base layer and metal layer is formed over a large area, so that there is a low contact resistance and simultaneously achieves an additional passivation effect on the back of the solar cell due to the base-texture interlayer and / or the higher doping of the texture layer becomes.

In this case, it may be advantageous, in order to increase the electrical conductivity between metal layer and base layer, additionally to allow the metal layer directly adjacent to the base layer, for example as described above by means of local melting to produce LFC.

In the aforementioned advantageous embodiments of variants 2 and 3, the arrangement of the emitter preferably takes place at the front side of the solar cell, for example by application of an emitter layer or indiffusion. ren a doping opposite to the base doping to form an emitter on the front of the solar cell.

The ontaktierung of the emitter is preferably carried out in a conventional manner by a front-applied metallization, for example, a comb-like metallization.

The base layer is preferably formed as a crystalline silicon substrate, in particular as a silicon wafer and preferably has a thickness in the range of 20 pm to 300 μιη.

The production of a solar cell according to the invention in the case of local contacting of the base layer via the metal layer preferably comprises the following method steps:

First, a surface cleaning of the back of the base layer. Subsequently, a passivation layer is deposited, preferably consisting of intrinsic, amorphous, hydrogenated silicon.

Optionally, a further doped, amorphous silicon layer is deposited.

Subsequently, the application of an etching mask to generate the diffraction structure. In this case, in particular, the application of a known embossing process is advantageous in which initially a lacquer is applied and the structuring of the lacquer is carried out by means of embossing.

Subsequently, the predetermined by the previously applied mask diffraction pattern is generated by etching.

Then, the application of the texturing intermediate structure takes place, wherein a leveling of the diffraction structure takes place and finally a metal layer is applied to the texturing intermediate structure and local contacting takes place, for example by local melting (LFC). The production of a solar cell according to the invention with a base layer which has been contacted over the whole area preferably comprises the following method steps:

After surface cleaning of the rear side of the base layer, the deposition of the passivation layer and a doped texture layer takes place, wherein the texture layer has the same doping type as the base layer.

Subsequently, as described above, the texture is created by creating an etching mask and etching the texture.

The diffraction structure produced is leveled by means of the texture layer, wherein the texture layer is designed to be electrically conductive, preferably as TCO.

Finally, over a large area, preferably over the entire surface, the metal layer is applied to the texturing intermediate structure.

As described above, the solar cell according to the invention is particularly suitable for a combination of a refractive texture on the front side and the diffractive texture by means of the diffraction structure on the rear side.

The use of diffractive textures on the backside of a solar cell is basically known as described above and described, for example, in C. Heine, R.H. Morf, Submicrometer gratings for Solar energy applications, Applied Optics, VL. 34, no. 14, May 1,995. However, in the case of the silicon solar cells known from the prior art, there is no combination of refractive and diffractive textures. Applicant's investigations have shown that the main disadvantage is that when combining a front side with a refractive texture and a rear side with a diffractive texture, the light impinges on the rear side in different directions and with different relative orientations, so that a part of the Rays strike the backside texture at a non-optimal angle. Furthermore, the beams diffracted by the rear side hit the front side at least partially at unfavorable angles, so that a decoupling of these beams takes place, and thus the luminous efficacy is reduced. These effects are especially pronounced when the frontal texture is a three-dimensional Texture, such as the texture known in the art by means of inverted pyramids.

In an advantageous embodiment, therefore, the front side of the solar cell according to the invention has a front side texture at least in a partial area which is periodic along a spatial direction A with a period length greater than 1 μm and the rear side has a backside texture at least in a partial area along a spatial direction B is periodic with a period less than 1 pm. In this case, the spatial direction A is at an angle between 80 ° and 100 ° degrees to the spatial direction B. When viewed from the top of the solar cell, the spatial direction A of the periodic extension of the frontal texture and the spatial direction B of the periodic extension of the backside texture consequently conclude an angle between 80 ° and 100 °. A texture is said to be periodic if a vector V (V ^ 0) exists for which holds: A translation around V and integer multiples of V converts the texture into itself. The generating vector of a period is the smallest possible vector V of meets this condition. Periodicity is present only if such a smallest possible vector exists. For V, it is true that only translations of V and integer multiples of V transform the texture into itself. The length of V is the period length. If there is only one (linearly independent) such vector, one speaks of linear periodicity. Preferably, the front and back textures have a linear periodicity.

The spatial direction A runs parallel to the front and the spatial direction B parallel to the back. The term "parallel" here and below refers to the respectively untextured surfaces of front and back, ie imaginary plane planes, which would represent the untextured front or back side, typically the front side is parallel to the rear side Spatial direction X is parallel to a plane E ", it should be understood that the vector representing X is in the plane E, that is, all points of X are also points of E. In this advantageous embodiment, the solar cell according to the invention has a texture extending periodically in the spatial direction A on the front side on. This reduces the possible directions and orientations with which light rays strike the rear side. Furthermore, the spatial direction B, in which the backside texture extends periodically, is at an angle of between 80 ° and 100 ° to the spatial direction A. For the majority of the possible beam paths, the above-described negative effect of shortening the light path is thereby excluded.

Due to the formation of the front side texture as a texture extending periodically in the spatial direction A, at least in the case of beams incident perpendicularly to the front, coupling takes place essentially in a plane which is spanned by the spatial direction A and a spatial direction perpendicular to the front side. This makes it possible to optimize the diffractive backside texture in such a way

that the beams diffracted at the rear propagate almost parallel to the rear side, whereby an optical path extension is achieved,

- That the diffracted at the back rays incident on the front so that a total reflection at the front and thus also a Lichtwegverlängerung is achieved and

- That no lossy multiple reflections occur on the back.

Such an optimization is in part already achieved in that the spatial direction B, in which the backside texture extends periodically, is at an angle between 80 ° and 100 ° to the spatial direction A. An increased optimization is achieved by an angle between 85 ° and 95 °, preferably an angle of 90 °, d. H. that the two spatial directions are at right angles to each other.

Advantageously, the front and back surface cover each substantially the entire front and back of the solar cell, possibly with interruptions z. B. for the application of metallization. Likewise, it is within the scope of the invention that only one or more partial areas of the front and / or back have a texture. In this embodiment, the front and back side textures are preferably arranged on opposite front and back portions. It is within the scope of the invention that, where appropriate, the solar cell is divided at the front and / or back into several subregions, each having a periodically extending texture. It is essential, however, that repetitions that may be present in directions other than the spatial direction of the periodic extension have a significantly greater periodicity compared to the periodicity of the periodically extending texture.

Preferably, therefore, the front side texture in a direction perpendicular to the spatial direction A spatial direction A 'no periodicity or periodicity with a period length of at least 30 μπι, preferably at least 50 μιη on. The spatial direction A 'also runs parallel to the front side. Furthermore, it is advantageous if the front side texture in the spatial direction A 'has no periodicity or a periodicity with a period length which is at least 5 times, preferably at least 10 times, furthermore preferably at least 1 5 times the period length of the front side texture in the direction of space A corresponds.

Furthermore, preferably the backside texture in a direction perpendicular to the spatial direction B spatial direction B 'no periodicity or a periodicity with a period of at least 5 μηη, preferably at least 10 μηη, further preferably at least 30 μιτι, in particular at least 50 μητι on. The spatial direction B 'also runs parallel to the back. Furthermore, it is advantageous if the backside texture in the spatial direction B 'has no periodicity or a periodicity with a period length which is at least 5 times, preferably at least 10 times, furthermore preferably at least 1 5 times the period length of the backside texture in the direction of space B corresponds.

Furthermore, it is advantageous if the textures have no or only a slight height change in the spatial directions A 'or B', ie that the height profile of the texture does not change or does not change significantly in this spatial direction. Preferably, therefore, the height of the front side texture changes in the spatial direction A 'by no more than 2 μπι, in particular, in the spatial direction A', the front side texture has an approximately constant height.

Furthermore, therefore, the height of the backside texture in the spatial direction A 'preferably does not change by more than 50 nm; in particular, in the spatial direction A', the backside texture has an approximately constant height.

The above conditions simplify the manufacturing process and prevent adverse optical effects.

In order to simplify and reduce the cost of manufacturing the solar cell according to the invention, it is particularly advantageous for the front side texture to be a linearly extending texture in the spatial direction A 'and / or for the back to be a linearly extending texture in the spatial direction B'. Such structures are also called trench structures. The spatial direction of the periodic extension is thus perpendicular to the linear or trench-like texture elements in this case. In particular, it is advantageous that the front side texture in the spatial direction A 'and / or the backside texture in the spatial direction B' each have an approximately constant cross-sectional area and an approximately constant cross-sectional area shape.

It is within the scope of the invention that the texture is interrupted in partial regions on the front and / or rear side, for example for applying a metallization structure for electrical contacting of the silicon substrate.

The height of the front side texture, i. the maximum height difference of the optically relevant surface of the front side texture, is preferably between 2 μιη and 50 μηι, in particular between 5 μιη and 30 μιη. As a result, an optimization of the refractive optical effect and the cost-effective production is achieved.

The height of the backside texture, ie the maximum height difference of the optically relevant surface of the backside texture, is preferably between 50 nm and 500 nm, in particular between 80 nm and 300 nm Optimization of the diffractive optical effect and cost-effective production achieved.

In order not to impair the electrical properties of the solar cell and to enable a simple electrical contacting by means of metallic structures, it is advantageous if the front side texture has a periodicity of less than 40 μιτι, preferably less than 20 μηη.

To achieve optimum optical properties of the back side, it is alternatively and / or additionally advantageous for the backside texture to have a periodicity greater than 50 nm, preferably greater than 100 nm.

Preferably, the front side texture is created directly on the front side of the silicon substrate. It is likewise within the scope of the invention to apply one or more layers on the front side of the silicon substrate and to produce the texture on one or more of these layers.

The periodicities of the front side texture and the back side texture are preferably selected such that the front side texture is a predominantly refractory texture and the back side texture is a predominantly diffractive texture. Advantageously, the periodicity of the front side is therefore greater than 3 μιη, in particular greater than 5 μιη. Alternatively or additionally, the periodicity of the backside texture is advantageously less than 800 nm, preferably less than 600 nm.

For optimal increase of the light output, the front side texture advantageously covers at least 30%, in particular at least 60%, furthermore at least 90% of the front side, possibly with interruptions z. B. for metallization. The same applies to the backside texture on the back.

To produce highly efficient silicon solar cells, the use of a monocrystalline silicon substrate is common. In this case, the front side texture is preferably formed by linear texture elements each having a triangular cross-sectional area.

Likewise, the use of multicrystalline silicon wafers is advantageous. Although the efficiencies achieved here are slightly lower in comparison with monocrystalline solar cells, but the material costs are significantly lower. When using multicrystalline silicon wafers, a front side texture having a cross-sectional area that has curved or round edges is advantageously produced.

Because of the different etch rates in different spatial directions when etching a monocrystalline silicon substrate, the backside texture preferably comprises linear texture elements as described, for example, in the aforementioned J. Heine publication; R. H. Morf, loc. Cit., On page 2478 to FIG. Frequently, however, the production of such texture elements with a sawtooth-shaped cross section is extremely complicated and expensive. Preferably, the sawtooth shape is therefore approximated by a staircase shape, as described in the cited publication on the same page to Figure 4. The cited publication will be incorporated into this description by reference.

A particularly simple and therefore inexpensive to produce diffractive texture represents a crenellated backside texture with mutually perpendicular flanks, as described for example in the aforementioned publication to Figure 2.

Likewise, sinusoidal, diffractive textures and sawtooth, diffractive textures are within the scope of the invention.

Due to the small structure sizes of the backside texture, the aforementioned advantageous cross-sectional shapes can often only be approximately achieved due to the process, in particular roundings often occur at the edges of the structures.

In contrast to the previously known diffractive back textures, in the case of the solar cell according to the invention the rays typically do not strike the backside perpendicularly due to the front side texture. The backside texture is therefore preferably optimized for a non-perpendicular incidence of the rays on the rear side, in particular in which, for a given angle of incidence Θ on the rear side, the periodicity A _{R of} the backside texture according to formula 1 is selected: ^Λ « ⁼ ΤΞ ^ ( ^{Forme1 1} ). with the refractive index n of the silicon substrate and the wavelength λ of the beam incident on the back surface. In this case, λ is preferably the largest relevant wavelength, ie the largest wavelength of the spectrum of the radiation impinging on the solar cell that still contributes to the charge carrier generation in the solar cell and the angle Θ of the main incident angle of the rays due to the frontal texture on the backside. Formula 1 provides optimum periodicity for the backside texture, especially at an angle of 90 ° between the periodic extension of front and back texture and / or in frontal texture with triangular cross-sectional areas.

When using a monocrystalline silicon wafer and etching the front side texture is due to the crystal orientation typically results in an angle of incidence Θ on the back of 41, 4 °. Furthermore, for silicon, the largest relevant wavelength is preferably chosen to be λ = 1100 nm, since this represents a wavelength near the band gap. With a refractive index of n = 3.5 for silicon, a periodicity of A _R results in this preferred embodiment = 419 nm.

Further features and preferably embodiments are explained below with reference to the figures and exemplary embodiments. Showing:

1 shows a solar cell according to the invention according to the previously described first variant of a preferred embodiment, in which the texture layer is formed as an emitter layer;

Figure 2 shows an embodiment of a solar cell according to the invention according to the previously described second variant of a preferred embodiment, wherein the texture layer is formed as a passivation layer and FIG. 3 shows an exemplary embodiment of a solar cell according to the invention according to the previously described third variant of an advantageous embodiment, in which a back surface field (BSF) is generated by means of the doped texture layer.

The exemplary embodiments of a solar cell according to the invention shown schematically in FIGS. 1 to 3 each have a base layer 1, 21, 31 formed as n-doped silicon wafer. The schematic representations in FIGS. 1 to 3 each show a partial section of the solar cell, that is to say the solar cell continues analogously at the right and left edges. FIGS. 1 to 3 each show a partial sectional view in which the front side is at the top and the back side of the solar cell is at the bottom. The solar cells shown are each formed on a silicon wafer of size 20 cm x 20 cm, wherein the silicon wafer has a thickness of about 250 μητι at a base doping of 10 ¹⁵ cm ^'3rd

All three embodiments have at the front in the plane of the right to left extending linear optical structures which have perpendicular to the plane of a triangular cross section, so that along the surface perpendicular to the plane of a trench form forms as a surface course of the front. This refractive front side texture has a periodicity of 10 μιη, wherein the height of the texture elements is about. 14 μιτι.

Also in all three embodiments, a texture layer 2, 22, 32 is arranged on the rear side, which extends a diffractive texture with a crenellated curve in cross section respectively horizontally in the plane of Figures 1 to 3. Perpendicular to the plane in Figures 1 to 3 the backside texture is linear.

The backside texture has a periodicity of about 420 nm.

The spatial direction of the periodic extent of the front side texture is at an angle of 90 ° to the spatial direction of the periodic extension of the backside texture, ie the linear course of the front side texture is perpendicular to the linear course of the backside texture. The height of the texture elements on the back is about 0, 1 μηη.

1 shows an embodiment according to the previously described first variant of a preferred embodiment is shown. On the base layer

1, a pn-type intermediate layer 5 having a thickness of about 5 nm and formed of intrinsic amorphous hydrogenated silicon is deposited on the backside. Then, a texture layer 2 is applied, which consists of p-doped nanocrystalline silicon with a thickness of about 150 nm. The doping is 10 ¹⁹ cm ^"3 .

On the texture layer 2, a texturing intermediate structure 3 is applied, which consists of electrically conductive, transparent oxide (TCO). This levelens the unevenness units caused by the texture, so that a metal layer 4 is ideally applied to the texturing intermediate structure 3 as a planar layer. At a minimum, the metal layer is applied to a substantially planar surface as compared to the surface of the texture layer.

Between the base layer 1 and the textured layer formed as an emitter layer

2, a pn junction is formed via the pn intermediate layer 5.

Radiation incident on the front side is coupled into the base layer 1 and at least partially absorbed there, so that electron-hole pairs are generated. At the pn junction, the charge carrier separation takes place.

The majority charge carriers of the textured layer 2 formed as an emitter layer are dissipated via the electrically conductive texturing intermediate structure 3 and the metal layer 4 functioning as a metallic emitter contact.

The majority charge carriers of the base layer 1 are dissipated via comb-like metallization structures (not shown) on the front side of the solar cell.

The exemplary embodiment illustrated in FIG. 1 thus has the advantages that, on the one hand, the back side of the base layer 1 is passivated by the pn intermediate layer 5 with a very high quality. In addition, the back side due to the diffractive texture of the texture layer 2 has a very high optical quality for radiation in the wavelength range 600 nm to 1 .200 nm, so that even radiation that is not absorbed when first passing through the base layer 1, due to the significantly extended light path essential for the production of Electron hole pairs contributes.

The high optical quality is thereby supported by the fact that the planarization of the texture by means of the texturing intermediate structure 3 prevents the formation of plasmons in the metal layer 4.

The metal layer 4 is formed of aluminum.

2 shows an embodiment of a solar cell according to the invention according to the previously described second variant of a preferred embodiment is shown schematically in partial section.

On the base layer 21, the texture layer 22 is arranged directly on the rear side. In this case, the texture layer is formed from intrinsic, amorphous, hydrogenized silicon and thus also acts as a passivation layer for electrically passivating the back side of the base layer 21.

The diffractive texture of the texture layer 22 and the refractive texture on the front side of the base layer 21 are formed analogously to the embodiment according to FIG.

The texturing intermediate structure 23 is designed to be electrically insulating as a silicon dioxide layer. The metal layer 24 consisting of aluminum is then arranged thereon. Also in this embodiment, the texture of the texture layer 22 is flattened by the texture intermediate structure 23, so that the metal layer 24 is applied to a plane plane.

The electrical contacting of the base layer 21 takes place in such a way that a local melting of the metal layer 24, texturing intermediate structure 23, texture layer 22 and a small subregion of the base layer 21 took place by means of a laser, so that after solidification of the melt mixture the structure illustrated in FIG. 2 was formed. In this case, the metal layer 24 adjoins the local In this case, the region 24a directly adjoins the base layer 21, so that an electrical contact exists. In this case, the region 24b identifies the region in the base layer 21 which has been melted during the contacting process.

At the front side of the base layer 21, an emitter layer (not shown) is diffused by diffusion from the gas phase, and this emitter layer is electrically contacted by comb-like metallization structures (not shown).

In the exemplary embodiment illustrated in FIG. 3 in accordance with the previously described third variant of a preferred embodiment, the refractive texture on the front side of the base layer 31 and the diffractive texture of the texture layer 32 according to FIG. 1 are likewise formed. Likewise, according to FIG. 2, an emitter layer, which is contacted in an electrically conductive manner by means of comb-like metallic contacting structures, is diffused on the front side of the base layer 31.

At the back of the base layer 31, a base-texture intermediate layer 35 is disposed. This is electrically non-conductive formed from intrinsic, amorphous, hydrogenated silicon and has a thickness of about 5 nm.

The texture layer 32 is arranged on the base-texture intermediate layer 35 and also has an n-type doping, ie a doping of the same doping type as the base layer 31. However, the texture layer 32 is doped higher than the base layer 31 at a doping concentration of 10 ¹⁹ cm ^-3 .

In this embodiment, the back side of the base layer 31 is thus electrically passivated in two respects: on the one hand, a low surface recombination speed is achieved by the base-texture intermediate layer 35 formed as a passivation layer. On the other hand, a so-called back surface field (BSF) is formed by the doped texture layer 31, which additionally reduces the recombination speed at the rear side of the base layer 31.

The solar cell shown in this embodiment thus has a particularly high electrical quality at the back of the base layer 31. The texturing intermediate structure 33 is formed in an electrically conductive manner from transparent oxide (TCO) so that majority charge carriers are removed from the base layer 31 via the metal layer 34.

Although the base-texture interlayer 35 is intrinsic, i. H. electrically non-conductive. Due to the small thickness of 5 nm, however, at least the majority charge carriers of the base layer 31 can reach the metal layer 34 without appreciable electrical resistance to the texture layer 32 and the texturing intermediate structure 33, so that no losses due to any series resistance caused by the base-texture intermediate layer 35 occur.

Claims

claims

Solar cell

comprising a silicon layer, which has a doping of a first doping type, a front side designed for the light coupling and a rear side,

wherein the silicon layer is a doped base layer (1, 21, 31), on the back of the silicon layer at least one texture layer (2, 22, 32) and a metal layer (4, 24, 34) are arranged, each optionally with further intermediate layers and

the texture layer (2, 22, 32) has a backside texture at least in a partial region, which is formed as an optical diffraction structure, characterized in that

in that at least one texturing intermediate structure (3, 23, 33) is arranged between the texture layer (2, 22, 32) and the metal layer (4, 24, 34), the metal layer (4, 24, 34) being in contact with the texture layer (2, 22, 32) and / or is electrically conductively connected to the base layer (1, 21, 31),

the texturing intermediate structure (3, 23, 33) is substantially transparent at least in the wavelength range 800 nm to 1 100 nm and has a refractive index n smaller than the refractive index of the texture layer at least in this wavelength range,

that the refractive index of all layers arranged between the base layer (1, 21, 31) and the texturing intermediate structure (3, 23, 33) deviates by a maximum of 30% from the refractive index of silicon, and

that that layer which one _the, surface is directly on the back of the base layer (1, 21, 31) is arranged relative to the recombination of minority carriers passivating passivation layer.

Solar cell according to claim 1,

characterized,

the texturing intermediate structure (3, 23, 33) is substantially transparent at least in the wavelength range 600 nm to 1200 nm.

Solar cell according to at least one of the preceding claims, characterized the texturing intermediate structure (3, 23, 33) and / or further layers arranged between the texture layer (2, 22, 32) and the metal layer (4, 24, 34) reduces the unevenness caused by the backside texture, so that the metal layer (4, 24 , 34) is applied on a surface which is less uneven with respect to the surface of the backside texture.

4. Solar cell according to at least one of the preceding claims,

characterized,

in that the texturing intermediate structure (3, 23, 33) and optionally further layers arranged between the texture layer (2, 22, 32) and metal layer (4, 24, 34) have a total thickness of at least 50 nm, preferably that the texturing intermediate structure (3, 23, 33) has a thickness of at least 50 nm.

5. Solar cell according to at least one of the preceding claims,

characterized,

the texturing intermediate structure (3, 23, 33) has a refractive index n of at least 2, preferably a refractive index n of less than 1.6, in particular approximately the refractive index of air, at least in the wavelength range 800 nm to 110 nm and / or

in that the absorption coefficient α of the texture intermediate structure is at most 1 0 ⁴ cm ^-1 , preferably at most 1 0 ³ cm ^-1 , furthermore preferably at most 1 0 ² cm ^-1 .

6. Solar cell according to at least one of the preceding claims,

characterized,

in that the passivation layer is a passivation layer passivating the surface with respect to the recombination of minority carriers, in particular a passivation layer which has a surface recombination speed for minority carriers of less than 1 ³ cm / s, preferably less than 1, at the interface with the backside of the base layer (1, 21, 31) 0 ² cm / s, in particular less than 1 0 ¹ cm / s.

7. Solar cell according to claim 6,

characterized,

the passivation layer is undoped.

8. Solar cell according to at least one of claims 6 to 7,

characterized,

in that the passivation layer is formed from silicon, preferably formed from intrinsic armorphic, hydrogenated silicon.

9. Solar cell according to at least one of the preceding claims,

characterized,

the texture layer (2) is formed as an emitter layer and is doped in the opposite direction to the base view,

that between emitter layer and base layer (1) at least one undoped pn-intermediate layer (5) is arranged, over which a pn junction between the emitter and base layer (1) is formed and

the emitter layer is formed as an electrically conductive layer, at least with regard to the charge carrier majorities of the emitter layer,

preferably, that no further intermediate layers are arranged in the layer sequence base layer / pn interlayer / emitter layer.

10. Solar cell according to claim 9,

characterized,

the pn intermediate layer (5) is formed as a passivation layer according to at least one of claims 6 to 8.

1 1. Solar cell according to at least one of claims 1 to 8,

characterized,

in that the texturing intermediate structure (23) is designed to be electrically insulating, and in that the metal layer (24) is connected to a plurality of local regions of the backside at least with respect to the base layer _. Cht (21) is electrically conductively connected, preferably, that the metal layer (24) at several local areas of the rear surface of the base layer (21) directly adjacent thereto.

12. Solar cell according to claim 1 1,

characterized,

in that the texture layer (22) is applied directly to the base layer (21), preferably in that the texture layer (22) is formed as a passivation layer according to at least one of claims 6 to 7.

13. Solar cell according to at least one of claims 1 to 8,

characterized,

the texture layer (32) and the base do not have a doping of the same doping type,

in that at least one base-texture intermediate layer (35) is arranged between the texture layer (32) and the base layer (31), and

that the texturing intermediate structure (33) is formed as an electrically conductive layer, at least with regard to the charge carrier majorities of the texture layer (32),

preferably, that no further intermediate layers are arranged in the layer sequence base layer / base texture intermediate layer / texture layer / texture intermediate structure.

14. Solar cell according to claim 13,

characterized,

in that the base-texture intermediate layer (35) is undoped, preferably that the base-texture intermediate layer (35) is formed as a passivation layer according to at least one of claims 6 to 8.

15. Solar cell according to at least one of claims 1 3 to 14,

characterized,

the texture layer (32) is doped higher than the base layer (31).

16. Solar cell according to at least one of the preceding claims,

characterized,

in that the refractive index of all layers arranged between the base layer (1, 21, 31) and the texturing intermediate structure (3, 23, 33) is at most in the wavelength range 800 nm to 1100 nm at most by 10%, preferably at most 5%, furthermore preferably at maximum 1% differs from the refractive index of silicon.