EP2393957A1 - Method of forming memory cell using gas cluster ion beams - Google Patents
Method of forming memory cell using gas cluster ion beamsInfo
- Publication number
- EP2393957A1 EP2393957A1 EP10702188A EP10702188A EP2393957A1 EP 2393957 A1 EP2393957 A1 EP 2393957A1 EP 10702188 A EP10702188 A EP 10702188A EP 10702188 A EP10702188 A EP 10702188A EP 2393957 A1 EP2393957 A1 EP 2393957A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- forming
- electrode
- phase
- heater
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/066—Patterning of the switching material by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/365,473 US7785978B2 (en) | 2009-02-04 | 2009-02-04 | Method of forming memory cell using gas cluster ion beams |
PCT/US2010/022035 WO2010090900A1 (en) | 2009-02-04 | 2010-01-26 | Method of forming memory cell using gas cluster ion beams |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2393957A1 true EP2393957A1 (en) | 2011-12-14 |
EP2393957B1 EP2393957B1 (en) | 2013-03-06 |
Family
ID=42111842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10702188A Active EP2393957B1 (en) | 2009-02-04 | 2010-01-26 | Method of forming memory cell using gas cluster ion beams |
Country Status (8)
Country | Link |
---|---|
US (3) | US7785978B2 (en) |
EP (1) | EP2393957B1 (en) |
JP (1) | JP5418926B2 (en) |
KR (1) | KR101375374B1 (en) |
CN (1) | CN102308017B (en) |
SG (1) | SG173137A1 (en) |
TW (2) | TWI515836B (en) |
WO (1) | WO2010090900A1 (en) |
Families Citing this family (27)
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KR20100062570A (en) * | 2008-12-02 | 2010-06-10 | 삼성전자주식회사 | Resistive random access memory |
KR101181169B1 (en) * | 2009-01-30 | 2012-09-18 | 에스케이하이닉스 주식회사 | Method for munufacturing memory device and method for manufacturing phase change random access memory device using the same |
US7785978B2 (en) * | 2009-02-04 | 2010-08-31 | Micron Technology, Inc. | Method of forming memory cell using gas cluster ion beams |
US8357582B2 (en) * | 2010-11-01 | 2013-01-22 | Micron Technology, Inc. | Methods of forming electrical components and memory cells |
US8486743B2 (en) | 2011-03-23 | 2013-07-16 | Micron Technology, Inc. | Methods of forming memory cells |
JP2012204591A (en) * | 2011-03-25 | 2012-10-22 | Toshiba Corp | Film formation method and non-volatile storage device |
US20130051115A1 (en) * | 2011-08-24 | 2013-02-28 | Advanced Micro Devices, Inc. | Integrated circuit with backside passive variable resistance memory and method for making the same |
US8994489B2 (en) | 2011-10-19 | 2015-03-31 | Micron Technology, Inc. | Fuses, and methods of forming and using fuses |
US9252188B2 (en) | 2011-11-17 | 2016-02-02 | Micron Technology, Inc. | Methods of forming memory cells |
US8546231B2 (en) | 2011-11-17 | 2013-10-01 | Micron Technology, Inc. | Memory arrays and methods of forming memory cells |
US8723155B2 (en) | 2011-11-17 | 2014-05-13 | Micron Technology, Inc. | Memory cells and integrated devices |
KR20130101351A (en) * | 2012-03-05 | 2013-09-13 | 에스케이하이닉스 주식회사 | Resistive memory device and fabrication method thereof |
US9136467B2 (en) | 2012-04-30 | 2015-09-15 | Micron Technology, Inc. | Phase change memory cells and methods of forming phase change memory cells |
US8765555B2 (en) * | 2012-04-30 | 2014-07-01 | Micron Technology, Inc. | Phase change memory cells and methods of forming phase change memory cells |
FR2995442B1 (en) * | 2012-09-10 | 2016-01-01 | St Microelectronics Crolles 2 | MEMORY CELL WITH PHASE CHANGE |
US8748309B2 (en) * | 2012-09-14 | 2014-06-10 | GlobalFoundries, Inc. | Integrated circuits with improved gate uniformity and methods for fabricating same |
US9553262B2 (en) | 2013-02-07 | 2017-01-24 | Micron Technology, Inc. | Arrays of memory cells and methods of forming an array of memory cells |
JP6162031B2 (en) * | 2013-11-26 | 2017-07-12 | 株式会社日立製作所 | Phase change memory and semiconductor recording / reproducing apparatus |
US9881971B2 (en) | 2014-04-01 | 2018-01-30 | Micron Technology, Inc. | Memory arrays |
US9362494B2 (en) | 2014-06-02 | 2016-06-07 | Micron Technology, Inc. | Array of cross point memory cells and methods of forming an array of cross point memory cells |
US9343506B2 (en) | 2014-06-04 | 2016-05-17 | Micron Technology, Inc. | Memory arrays with polygonal memory cells having specific sidewall orientations |
CN104868053B (en) * | 2015-04-30 | 2017-08-25 | 宁波大学 | It is a kind of for Ge Sb Te Se thin-film materials of phase transition storage and preparation method thereof |
US9772664B1 (en) * | 2016-03-25 | 2017-09-26 | Adlink Technology Inc. | Memory heater and heating aid arrangement |
CN107369760B (en) * | 2016-05-11 | 2020-09-04 | 中芯国际集成电路制造(上海)有限公司 | Phase change film for phase change memory and preparation method thereof |
CN106298791B (en) * | 2016-09-19 | 2019-02-15 | 四川洪芯微科技有限公司 | Programmable non-volatile memory and its utilization on semiconductor storage unit |
EP3746843A4 (en) * | 2018-01-31 | 2022-02-23 | Massachusetts Institute of Technology | Methods and apparatus for modulating light with phase-change materials |
CN110729401B (en) * | 2019-09-03 | 2021-08-13 | 华中科技大学 | Ga-Sb-O phase-change material and application and preparation method thereof |
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US5335219A (en) * | 1991-01-18 | 1994-08-02 | Ovshinsky Stanford R | Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
JP2662321B2 (en) * | 1991-05-31 | 1997-10-08 | 科学技術振興事業団 | Surface treatment method using ultra-slow cluster ion beam |
JPH05267473A (en) * | 1992-03-18 | 1993-10-15 | Mitsubishi Electric Corp | Method and device for formation of wiring film for semiconductor |
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-
2009
- 2009-02-04 US US12/365,473 patent/US7785978B2/en active Active
-
2010
- 2010-01-26 CN CN201080006554.2A patent/CN102308017B/en active Active
- 2010-01-26 KR KR1020117020299A patent/KR101375374B1/en active IP Right Grant
- 2010-01-26 JP JP2011548199A patent/JP5418926B2/en active Active
- 2010-01-26 WO PCT/US2010/022035 patent/WO2010090900A1/en active Application Filing
- 2010-01-26 EP EP10702188A patent/EP2393957B1/en active Active
- 2010-01-26 SG SG2011053766A patent/SG173137A1/en unknown
- 2010-02-04 TW TW103136909A patent/TWI515836B/en active
- 2010-02-04 TW TW99103368A patent/TWI469268B/en active
- 2010-07-27 US US12/844,541 patent/US8193607B2/en active Active
-
2012
- 2012-06-01 US US13/486,678 patent/US8614499B2/en active Active
Non-Patent Citations (1)
Title |
---|
See references of WO2010090900A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP2393957B1 (en) | 2013-03-06 |
CN102308017B (en) | 2014-06-04 |
CN102308017A (en) | 2012-01-04 |
TWI469268B (en) | 2015-01-11 |
US20100193780A1 (en) | 2010-08-05 |
TWI515836B (en) | 2016-01-01 |
US20100288994A1 (en) | 2010-11-18 |
TW201505130A (en) | 2015-02-01 |
WO2010090900A1 (en) | 2010-08-12 |
JP2012517102A (en) | 2012-07-26 |
SG173137A1 (en) | 2011-08-29 |
US8614499B2 (en) | 2013-12-24 |
TW201044512A (en) | 2010-12-16 |
US7785978B2 (en) | 2010-08-31 |
KR20110111520A (en) | 2011-10-11 |
JP5418926B2 (en) | 2014-02-19 |
KR101375374B1 (en) | 2014-03-17 |
US20120235108A1 (en) | 2012-09-20 |
US8193607B2 (en) | 2012-06-05 |
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