EP2347037A1 - Process for forming a non-stick coating based on silicon carbide - Google Patents

Process for forming a non-stick coating based on silicon carbide

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Publication number
EP2347037A1
EP2347037A1 EP09741363A EP09741363A EP2347037A1 EP 2347037 A1 EP2347037 A1 EP 2347037A1 EP 09741363 A EP09741363 A EP 09741363A EP 09741363 A EP09741363 A EP 09741363A EP 2347037 A1 EP2347037 A1 EP 2347037A1
Authority
EP
European Patent Office
Prior art keywords
silicon carbide
coating
carbide grains
silicon
grains
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09741363A
Other languages
German (de)
French (fr)
Inventor
Jean-Paul Garandet
Béatrice Drevet
Nicolas Eustathopoulos
Emmanuel Flahaut
Thomas Pietri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP2347037A1 publication Critical patent/EP2347037A1/en
Withdrawn legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002Crucibles or containers for supporting the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/02Processes for applying liquids or other fluent materials performed by spraying
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/08Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10Oxidising
    • C23C8/16Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002Crucibles or containers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249953Composite having voids in a component [e.g., porous, cellular, etc.]

Definitions

  • the present invention aims to provide a new type of surface coating for materials, and more particularly crucibles, intended to be brought into contact with high temperature liquid materials, such as liquid silicon, in order to allow a solidification, for example in the form of ingots.
  • Photovoltaic cells are mainly made from mono- or poly-crystalline silicon, in dies that involve the solidification of ingots from a liquid bath. The ingot is then cut into platelets which serve as a basis for the manufacture of the cells.
  • the most common technique is based on the implementation of a silicon nitride coating on the inner faces of the crucibles to be in contact with the molten silicon.
  • the mechanism proposed to explain the detachment is a rupture, in the deposition zone, due to the differential expansion stresses between the silicon ingot and the thus treated surface-treated silica crucible. Indeed, the mechanical cohesion of the deposition layer is low, the annealing being made at temperatures too low to initiate sintering of the powders.
  • US Pat. No. 6,491,971 describes a universal technology making it possible to apply a wide variety of coatings such as silicon nitride, silicon carbide, zirconium oxide, magnesium or barium zirconate, on the inner surface of crucible.
  • silicon carbide as a coating material may, at first glance, seem to be an advantageous alternative. Unfortunately, it is not totally devoid of inconvenience. Thus, great difficulties during the sawing step are associated with the presence of silicon carbide precipitates in the ingots. At the scale of the p-n junction of the photovoltaic cells, the precipitated silicon carbide, on the dislocations and other crystallographic defects, plays the role of a short-circuit and thus limits the performances of the devices (2).
  • the main object of the invention is to provide a method for producing a non-stick coating which does not have the difficulties or limitations set forth above.
  • the invention aims to provide a simple and inexpensive coating system for crucibles intended more particularly for implementation in the field of the manufacture of silicon ingot or other materials.
  • An object of the invention is in particular to provide an economical method of producing a non-stick coating formed of a silicon carbide structure and silicon oxide, as defined below.
  • the invention relates to a method useful for forming a release coating, particularly with respect to solid silicon, on the surface of the face (s) of a material comprising at least the steps of:
  • step (2) depositing said medium on the surface of the face (s) of the material to be treated in an amount sufficient to provide, upon drying of the applied composition, a film formed at least of silicon carbide grains, (3) exposing the treated material according to step (2) to a heat treatment under an oxidizing atmosphere and under conditions sufficient to cause the formation of a silicon oxide layer on the surface of the silicon carbide grains.
  • the coating formed according to the present invention comprises at least one porous layer formed of grains of silicon carbide which are coated at least in part with a nanometric layer of silica.
  • the porosity can be from 30% to 60% by volume. It can be controlled by the initial composition of the fluid.
  • the composition of step (1) further comprises at least one binder.
  • the dry film obtained at the end of step (2) is formed of grains of silicon carbide and of said binder, and the heat treatment exposed in step (3) is suitable for ensuring debinding of this film. .
  • step (2) may be renewed one or more times before implementation of step (3).
  • the method according to the invention as defined above can be reproduced at the end of step (3).
  • the layer formed of silicon carbide grains coated with a nanometric layer of silica is covered with a new thickness of the fluid composition as defined in step (1) and this deposited layer undergoes step (3). ) consecutive.
  • the coating formed in the context of the present invention is advantageous for several reasons. It simultaneously exhibits good adhesion properties to the base material forming the crucible, satisfactory anti-adhesion properties with respect to the ingot formed by solidification of the liquid silicon poured into this crucible and good mechanical resistance to liquid silicon.
  • the porous layer formed of silicon carbide grains may have a thickness ranging from 5 ⁇ m to 1 mm, in particular from 10 to 200 ⁇ m.
  • the silica layer formed on the surface of the silicon carbide grains, it may have a thickness ranging from 2 to 100 nm, and in particular from 10 to 30 nm.
  • the method according to the invention involves a first step for applying a fluid medium based on silicon carbide grains on the surface (s) of the material to be treated.
  • the coating derived therefrom has the characteristic of being formed of silicon carbide grains coated wholly or partly with silica.
  • the silicon carbide grains intended to form this coating generally have a particular size and dispersibility adequate to make them compatible with spray application by conventional methods.
  • the silicon carbide grains considered in the context of the present invention may have a size less than 5 microns. More particularly, their size varies from 20 nm to 5 ⁇ m and in particular from 200 nm to 1 ⁇ m.
  • This liquid medium besides the silicon carbide grains, may contain an effective amount of at least one organic binder having the appropriate chemical and physical properties to facilitate the application of the liquid coating mixture using conventional equipment.
  • the organic binder considered in the context of the present invention may be chosen from polyvinyl alcohol, polyethylene glycol or carboxymethylcellulose.
  • the mass ratio of silicon carbide / binder (s) may be at least 3: 1 and more preferably 5: 1.
  • the fluid medium dedicated to forming the coating according to the invention combines from 0 to 20% by weight relative to its total weight of at least one binder, to 20 to 60% by weight of silicon carbide, the associated liquid medium, usually water, ensuring the balance to 100%.
  • the corresponding fluid medium is formed by incorporation of silicon carbide grains and generally a binder to the liquid medium, generally water, under agitating so as to form a liquid mixture conducive to an application on the face or faces to be treated of the material in question.
  • This mixture intended to form the coating may, of course, contain other additives intended either to improve its qualities at the time of spraying and / or application, or to give the corresponding coating additional properties.
  • they may be polycarbonate dispersing agents, for example carboxylic acid or stearic acid.
  • the silicon carbide grains, the binder and the solvent considered in the context of the present invention have the advantage of leading to crucible coatings which are non-contaminating for the material to be produced.
  • the method according to the invention involves a first step aimed at applying a fluid medium based at least on silicon carbide grains on the surface or faces of the material to be treated.
  • fluid means a deformable state, capable of flowing and which is therefore compatible with an application by brush and / or spray gun for example.
  • the generally liquid fluid medium is transferred out of the spray gun at a pressure of compressed air and with a nozzle adjusted to obtain the desired coating thickness.
  • such a gun with a 0.4 mm nozzle can be used at a compressed air pressure of 2.5 bar.
  • This application of the liquid coating mixture can also be carried out by other modes of application, such as, for example, the brush or by soaking the parts in a bath.
  • the application of the fluid mixture for forming the coating can be carried out at ambient temperature or at a higher temperature.
  • the face or faces of the material to be treated according to the invention can be heated so as to be conducive to rapid drying of the applied coating layer.
  • at least the face or faces of the material to be treated, or even the whole of the material can be heated to a temperature ranging from 25 to 80 ° C., especially from 30 to 50 ° C., thus leading to Evaporation of the solvent.
  • the liquid mixture dedicated to form the coating is applied on the surface of the face (s) to be treated with a thickness adapted to prevent cracking during drying, for example less than 50 microns.
  • step (2) it is possible to proceed to a new application of a layer of the liquid mixture dedicated to form the coating on a first layer of grains of silicon carbide applied and dried, that is to say as formed in result of step (2).
  • the method according to the invention also comprises a heating step in an oxidizing atmosphere, at a temperature and within a time sufficient to allow the formation of a silicon oxide layer on the surface of the silicon carbide grains, or even the decomposition thermal binder, when it is present.
  • This heat treatment is therefore carried out in an oxidizing atmosphere. It is more specifically air.
  • this thermal step is carried out at a temperature below 1095 ° C.
  • the oxidation step may be carried out in an oxidizing atmosphere for 1 to 5 hours at a temperature ranging from 500 ° C. to 1050 ° C., and more particularly from 800 ° C. to 1050 ° C.
  • this heat treatment is in fact carried out at a temperature adjusted so as not to modify the porosity of the coating formed. In other words, this temperature remains below the temperature required to obtain sintering of the coating. Moreover, at the end of this annealing, the coating has a sufficient hardness with respect to the mechanical stresses it will have to undergo, typically less than 50 Shore A. At the end of this heat treatment, the piece is allowed to cool to room temperature.
  • the present invention also relates to materials having a coating formed by the method as described above.
  • the material treated according to the invention is advantageously a crucible.
  • This crucible is generally based on silicon, such as silica or silicon carbide but can also be based on graphite.
  • a slip consisting of 23% silicon carbide powder, 4% PVA polyvinyl alcohol and 73% water in percentages by weight is passed through a planetary mill filled with silicon carbide or agate balls to reduce the losses. agglomerates of powder.
  • the size of the grains of silicon carbide formed is between 500 nm and 1 ⁇ m.
  • the fluid medium thus formed is then spray-dried (compressed air pressure 2.5 bar, 0.4 mm nozzle placed at about thirty centimeters from the substrate) on the internal faces of a crucible (of a chemical nature) to be coated. .
  • the deposit thus obtained is dried with hot air at a temperature below 50 ° C.
  • the thickness of the coating finally obtained is of the order of 200 microns, and the thickness of the oxide layer on the silicon carbide grains is of the order of 30 nm.
  • the coating obtained according to the present invention is very porous.
  • the procedure of elaboration of a layer (deposition of layers with intermediate drying then high temperature annealing for debinding and oxidation of the powders) can be repeated several times. times.
  • a slurry consisting of 52% pre-sieved powder, 16% polyethylene glycol (PEG) and 32% water in percentages by weight, is passed through a planetary mill filled with silicon carbide or agate balls to reduce powder agglomerates. .
  • the slip is also passed to the ultrasound.
  • the slip is then either deposited by spray guns (compressed air pressure of 2.5 bars, 0.4 mm nozzle placed at about thirty centimeters from the substrate) or with the aid of a brush on the crucible to be coated.
  • the deposit thus obtained is dried in ambient air or hot (temperature below 50 0 C).
  • This layer is subjected to a step of 3 hours at 900 ° C. under air to dilute and oxidize the powders.
  • the thickness of the oxide layer obtained on the silicon carbide grains is of the order of 30 nm.
  • a slip consisting of 57% of previously screened powder and 43% of water in percentages by weight, is passed through a planetary mill filled with silicon carbide balls or agate to reduce powder agglomerates. The slip is also passed to the ultrasound.
  • the slip is then either deposited by spray guns (compressed air pressure of 2.5 bars, 0.4 mm nozzle placed at about thirty centimeters from the substrate) or with the aid of a brush on the crucible to be coated.
  • the deposit thus obtained is dried in ambient air or hot (temperature below 50 0 C).
  • This pistol (or brush) and drying procedure is repeated until the desired layer thickness is obtained.
  • This layer is subjected to a step of 3 hours at 900 ° C. under air to dilute and oxidize the powders.
  • the thickness of the oxide layer obtained on the silicon carbide grains is of the order of 30 nm.

Abstract

The present invention relates to a process for forming a non-stick coating, said coating being formed from grains of silicon carbide, which are surface-coated with a layer of silicon oxide. It also targets the materials having a coating formed by this process.

Description

Procédé pour former un revêtement anti-adhérent à base de carbure de silicium Process for forming a non-stick coating based on silicon carbide
La présente invention vise à proposer un nouveau type de revêtement de surfaces pour des matériaux, et plus particulièrement des creusets, destinés à être mis en contact avec des matières liquides à haute température, telles que le silicium liquide, en vue d'y permettre une solidification, par exemple sous la forme de lingots.The present invention aims to provide a new type of surface coating for materials, and more particularly crucibles, intended to be brought into contact with high temperature liquid materials, such as liquid silicon, in order to allow a solidification, for example in the form of ingots.
Les cellules photovoltaïques sont majoritairement fabriquées à partir de silicium mono- ou poly-cristallin, dans des filières qui mettent en jeu la solidification de lingots à partir d'un bain liquide. Le lingot est ensuite découpé en plaquettes qui servent de base à la fabrication des cellules.Photovoltaic cells are mainly made from mono- or poly-crystalline silicon, in dies that involve the solidification of ingots from a liquid bath. The ingot is then cut into platelets which serve as a basis for the manufacture of the cells.
Diverses techniques ont déjà été décrites dans la littérature pour prévenir une adhérence du matériau solidifié, au creuset.Various techniques have already been described in the literature to prevent adhesion of the solidified material to the crucible.
La technique la plus usitée repose sur la mise en œuvre d'un revêtement de type nitrure de silicium sur les faces internes des creusets devant être en contact avec le silicium fondu. Le mécanisme proposé pour expliquer le détachement est une rupture, dans la zone de dépôt, due aux contraintes de dilatation différentielle entre le lingot de silicium et le creuset de silice ainsi traité en surface. En effet, la cohésion mécanique de la couche de dépôt est faible, les recuits étant faits à des températures trop basses pour initier un frittage des poudres.The most common technique is based on the implementation of a silicon nitride coating on the inner faces of the crucibles to be in contact with the molten silicon. The mechanism proposed to explain the detachment is a rupture, in the deposition zone, due to the differential expansion stresses between the silicon ingot and the thus treated surface-treated silica crucible. Indeed, the mechanical cohesion of the deposition layer is low, the annealing being made at temperatures too low to initiate sintering of the powders.
Cependant, un tel revêtement doit, outre sa capacité à assurer le détachement, satisfaire à un autre impératif. Il doit posséder une tenue mécanique suffisante pendant la phase de contact avec le silicium liquide. Un revêtement ayant tendance à s'écailler conduit à la mise en solution de particules de céramique solides qui vont être incorporées dans le silicium en cours de croissance, ce qui n'est pas acceptable. Or, l'utilisation de poudres de nitrure de silicium comme revêtement anti-adhérent ne donne pas une totale satisfaction sur ce second aspect. Buonassisi et al (1) montrent en particulier que les impuretés présentes dans la poudre de nitrure de silicium peuvent avoir un effet négatif sur les propriétés photovoltaïques des lingots solidifiés. Ils font également état de la présence de particules de nitrures de silicium incluses dans les lingots solidifiés, dont l'origine peut être liée soit à la dissolution de l'azote dans le silicium, soit au déchaussement de grains de nitrure du fait d'une cohésion insuffisante du revêtement. D'autres alternatives de revêtements et/ou de techniques pour réaliser de tels revêtements ont donc été parallèlement mises au point.However, such a coating must, in addition to its ability to ensure the detachment, meet another requirement. It must have sufficient mechanical strength during the contact phase with liquid silicon. A coating having a tendency to flake leads to the dissolution of solid ceramic particles which will be incorporated in the silicon during growth, which is not acceptable. However, the use of silicon nitride powders as non-stick coating does not give complete satisfaction on this second aspect. Buonassisi et al (1) show in particular that the impurities present in the silicon nitride powder can have a negative effect on the photovoltaic properties of the solidified ingots. They also report the presence of silicon nitride particles included in the solidified ingots, the origin of which can be related either to the dissolution of the nitrogen in the silicon, or to the loosening of nitride grains due to insufficient cohesion of the coating. Other coating alternatives and / or techniques for producing such coatings have therefore been developed in parallel.
Par exemple, le brevet US 6,491,971 décrit une technologie universelle permettant d'appliquer une grande diversité de revêtements tels que le nitrure de silicium, le carbure de silicium, l'oxyde de zirconium, le zirconate de magnésium ou de barium, en surface interne de creuset.For example, US Pat. No. 6,491,971 describes a universal technology making it possible to apply a wide variety of coatings such as silicon nitride, silicon carbide, zirconium oxide, magnesium or barium zirconate, on the inner surface of crucible.
L'utilisation de carbure de silicium à titre de matériau de revêtement peut, de prime abord, sembler une alternative avantageuse. Malheureusement, il n'est pas totalement dénué d'inconvénients. Ainsi, de grosses difficultés lors de l'étape de sciage sont associées à la présence de précipités de carbure de silicium dans les lingots. A l'échelle de la jonction p-n des cellules photovoltaïques, le carbure de silicium précipité, sur les dislocations et autres défauts cristallographiques, joue le rôle de court-circuit et limite ainsi les performances des dispositifs (2).The use of silicon carbide as a coating material may, at first glance, seem to be an advantageous alternative. Unfortunately, it is not totally devoid of inconvenience. Thus, great difficulties during the sawing step are associated with the presence of silicon carbide precipitates in the ingots. At the scale of the p-n junction of the photovoltaic cells, the precipitated silicon carbide, on the dislocations and other crystallographic defects, plays the role of a short-circuit and thus limits the performances of the devices (2).
L'invention a précisément pour objet principal de proposer un procédé de réalisation d'un revêtement anti-adhérent ne présentant pas les difficultés ou limitations exposées ci-dessus.The main object of the invention is to provide a method for producing a non-stick coating which does not have the difficulties or limitations set forth above.
Ainsi, l'invention vise à proposer un système de revêtement simple et peu coûteux pour des creusets destinés plus particulièrement à une mise en œuvre dans le domaine de la confection de lingot de silicium ou autres matériels. Un but de l'invention est en particulier de proposer un procédé économique de réalisation d'un revêtement anti-adhérent formé d'une structure en carbure de silicium et en oxyde de silicium, telle que définie ci-après.Thus, the invention aims to provide a simple and inexpensive coating system for crucibles intended more particularly for implementation in the field of the manufacture of silicon ingot or other materials. An object of the invention is in particular to provide an economical method of producing a non-stick coating formed of a silicon carbide structure and silicon oxide, as defined below.
Plus particulièrement, l'invention porte sur un procédé utile pour former un revêtement anti-adhérent, notamment à l'égard du silicium solide, en surface de face(s) d'un matériau comprenant au moins les étapes consistant à :More particularly, the invention relates to a method useful for forming a release coating, particularly with respect to solid silicon, on the surface of the face (s) of a material comprising at least the steps of:
(1) disposer d'un milieu fluide comprenant au moins une dispersion de grains de carbure de silicium,(1) having a fluid medium comprising at least one dispersion of silicon carbide grains,
(2) procéder au dépôt dudit milieu en surface de la ou des face(s) du matériau à traiter en une quantité suffisante pour procurer, au séchage de la composition appliquée, un film formé au moins de grains de carbure de silicium, (3) exposer le matériau traité selon l'étape (2) à un traitement thermique sous atmosphère oxydante et dans des conditions suffisantes pour provoquer la formation d'une couche d'oxyde de silicium en surface des grains de carbure de silicium.(2) depositing said medium on the surface of the face (s) of the material to be treated in an amount sufficient to provide, upon drying of the applied composition, a film formed at least of silicon carbide grains, (3) exposing the treated material according to step (2) to a heat treatment under an oxidizing atmosphere and under conditions sufficient to cause the formation of a silicon oxide layer on the surface of the silicon carbide grains.
Avantageusement, le revêtement formé selon la présente invention comprend au moins une couche poreuse formée de grains de carbure de silicium qui sont revêtus au moins en partie d'une couche nanométrique de silice. La porosité peut être de 30 % à 60 % en volume. Elle peut être contrôlée par la composition initiale du fluide.Advantageously, the coating formed according to the present invention comprises at least one porous layer formed of grains of silicon carbide which are coated at least in part with a nanometric layer of silica. The porosity can be from 30% to 60% by volume. It can be controlled by the initial composition of the fluid.
Selon un mode de réalisation préféré, la composition de l'étape (1) comprend en outre au moins un liant. Dans cette alternative, le film sec obtenu à l'issue de l'étape (2) est formé de grains de carbure de silicium et dudit liant, et le traitement thermique exposé en étape (3) est apte à assurer le déliantage de ce film.According to a preferred embodiment, the composition of step (1) further comprises at least one binder. In this alternative, the dry film obtained at the end of step (2) is formed of grains of silicon carbide and of said binder, and the heat treatment exposed in step (3) is suitable for ensuring debinding of this film. .
Selon une variante de réalisation, l'étape (2) peut être renouvelée une ou plusieurs fois avant mise en œuvre de l'étape (3).According to an alternative embodiment, step (2) may be renewed one or more times before implementation of step (3).
Selon encore une variante de réalisation, le procédé selon l'invention tel que défini ci-dessus peut être reproduit à l'issue de l'étape (3). Dans cette alternative, la couche formée de grains de carbure de silicium revêtus d'une couche nanométrique de silice est recouverte d'une nouvelle épaisseur de la composition fluide telle que définie en étape (1) et cette couche déposée subit l'étape (3) consécutive.According to yet another embodiment, the method according to the invention as defined above can be reproduced at the end of step (3). In this alternative, the layer formed of silicon carbide grains coated with a nanometric layer of silica is covered with a new thickness of the fluid composition as defined in step (1) and this deposited layer undergoes step (3). ) consecutive.
Le revêtement formé dans le cadre de la présente invention est avantageux à plusieurs titres. Il manifeste simultanément des bonnes propriétés d'adhésion au matériau de base formant le creuset, des propriétés satisfaisantes d'anti-adhésion à l'égard du lingot formé par solidification du silicium liquide versé dans ce creuset et une bonne résistance mécanique au silicium liquide.The coating formed in the context of the present invention is advantageous for several reasons. It simultaneously exhibits good adhesion properties to the base material forming the crucible, satisfactory anti-adhesion properties with respect to the ingot formed by solidification of the liquid silicon poured into this crucible and good mechanical resistance to liquid silicon.
La couche poreuse formée de grains de carbure de silicium peut posséder une épaisseur variant de 5 μm à 1 mm, en particulier de 10 à 200 μm.The porous layer formed of silicon carbide grains may have a thickness ranging from 5 μm to 1 mm, in particular from 10 to 200 μm.
Pour ce qui est de la couche de silice, formée en surface des grains de carbure de silicium, elle peut posséder une épaisseur variant de 2 à 100 nm, et notamment de 10 à 30 nm.As regards the silica layer, formed on the surface of the silicon carbide grains, it may have a thickness ranging from 2 to 100 nm, and in particular from 10 to 30 nm.
D'autres caractéristiques et avantages de l'invention ressortiront mieux de la description qui suit. Cette description correspond à un mode de mise en œuvre particulier de l'invention et est donnée à titre purement illustratif et non limitatif. Revêtement de carbure de siliciumOther features and advantages of the invention will become more apparent from the following description. This description corresponds to a particular mode of implementation of the invention and is given purely by way of illustration and not limitation. Silicon carbide coating
Comme il ressort de ce qui précède, le procédé selon l'invention implique une première étape visant à appliquer un milieu fluide à base de grains de carbure de silicium en surface de la face ou des faces du matériau à traiter. Le revêtement qui en dérive a pour caractéristique d'être formé de grains en carbure de silicium enrobés en tout ou partie de silice.As is apparent from the foregoing, the method according to the invention involves a first step for applying a fluid medium based on silicon carbide grains on the surface (s) of the material to be treated. The coating derived therefrom has the characteristic of being formed of silicon carbide grains coated wholly or partly with silica.
Les grains de carbure de silicium destinées à former ce revêtement possèdent généralement une taille particulière et une dispersibilité adéquate pour les rendre compatible avec une application par pulvérisation selon des méthodes conventionnelles. Ainsi, les grains de carbure de silicium considérés dans le cadre de la présente invention peuvent posséder une taille inférieure à 5 μm. Plus particulièrement, leur taille varie de 20 nm à 5 μm et notamment de 200 nm à 1 μm.The silicon carbide grains intended to form this coating generally have a particular size and dispersibility adequate to make them compatible with spray application by conventional methods. Thus, the silicon carbide grains considered in the context of the present invention may have a size less than 5 microns. More particularly, their size varies from 20 nm to 5 μm and in particular from 200 nm to 1 μm.
La quantité de grains de carbure de silicium nécessaire pour obtenir le revêtement est pour des raisons évidentes directement liée à la surface du matériau à traiter. Son appréciation relève clairement des compétences de l'homme de l'art.The amount of silicon carbide grains needed to obtain the coating is for obvious reasons directly related to the surface of the material to be treated. His appreciation is clearly within the skill of those skilled in the art.
Ces grains sont maintenus en suspension dans un milieu liquide peu onéreux, et plus particulièrement de l'eau.These grains are kept in suspension in an inexpensive liquid medium, and more particularly water.
Ce milieu liquide, outre les grains de carbure de silicium, peut contenir une quantité efficace d'au moins un liant organique possédant les propriétés chimiques et physiques adéquates pour faciliter l'application du mélange liquide de revêtement en utilisant des équipements traditionnels.This liquid medium, besides the silicon carbide grains, may contain an effective amount of at least one organic binder having the appropriate chemical and physical properties to facilitate the application of the liquid coating mixture using conventional equipment.
Ainsi, le liant organique considéré dans le cadre de la présente invention peut être choisi parmi l'alcool polyvinylique, le polyéthylèneglycol ou encore la carboxyméthylcellulose. Par exemple, le rapport en masse grains de carbure de silicium/liant(s) peut être d'au moins 3: 1 et plus particulièrement de 5: 1 .Thus, the organic binder considered in the context of the present invention may be chosen from polyvinyl alcohol, polyethylene glycol or carboxymethylcellulose. For example, the mass ratio of silicon carbide / binder (s) may be at least 3: 1 and more preferably 5: 1.
D'une manière générale, le milieu fluide dédié à former le revêtement conforme à l'invention associe de 0 à 20 % en poids par rapport à son poids total d'au moins un liant, à 20 à 60 % en poids de grains de carbure de silicium, le milieu liquide associé, généralement de l'eau, assurant la balance à 100 %.In a general manner, the fluid medium dedicated to forming the coating according to the invention combines from 0 to 20% by weight relative to its total weight of at least one binder, to 20 to 60% by weight of silicon carbide, the associated liquid medium, usually water, ensuring the balance to 100%.
Le milieu fluide correspondant est formé par incorporation des grains de carbure de silicium et généralement un liant au milieu liquide, généralement l'eau, sous agitation de manière à former un mélange liquide propice à une application sur la ou les faces à traiter du matériau considéré.The corresponding fluid medium is formed by incorporation of silicon carbide grains and generally a binder to the liquid medium, generally water, under agitating so as to form a liquid mixture conducive to an application on the face or faces to be treated of the material in question.
Ce mélange destiné à former le revêtement peut, bien entendu, contenir d'autres additifs destinés soit à améliorer ses qualités au moment de la pulvérisation et/ou l'application, soit pour conférer au revêtement correspondant des propriétés annexes.This mixture intended to form the coating may, of course, contain other additives intended either to improve its qualities at the time of spraying and / or application, or to give the corresponding coating additional properties.
Il peut par exemple s'agir d'agents dispersants de type polycarbonate, par exemple l'acide carboxylique ou l'acide stéarique.For example, they may be polycarbonate dispersing agents, for example carboxylic acid or stearic acid.
Les grains de carbure de silicium, le liant et le solvant considérés dans le cadre de la présente invention ont pour avantage de conduire à des revêtements sur creuset qui ne sont pas contaminants pour le matériau à élaborer.The silicon carbide grains, the binder and the solvent considered in the context of the present invention have the advantage of leading to crucible coatings which are non-contaminating for the material to be produced.
Description détaillée du procédé selon l'inventionDetailed description of the process according to the invention
Le procédé selon l'invention implique une première étape visant à appliquer un milieu fluide à base au moins de grains de carbure de silicium en surface de la face ou des faces du matériau à traiter.The method according to the invention involves a first step aimed at applying a fluid medium based at least on silicon carbide grains on the surface or faces of the material to be treated.
Au sens de la présente invention, le terme « fluide » entend désigner un état déformable, capable de s'écouler et qui est donc compatible avec une application au pinceau et/ou au pistolet par exemple.For the purposes of the present invention, the term "fluid" means a deformable state, capable of flowing and which is therefore compatible with an application by brush and / or spray gun for example.
Dans le cas d'une application par pistolet, le milieu fluide généralement liquide est transféré hors du pistolet de pulvérisation à une pression d'air comprimé et avec une buse ajustée pour obtenir l'épaisseur de revêtement souhaitée.In the case of gun application, the generally liquid fluid medium is transferred out of the spray gun at a pressure of compressed air and with a nozzle adjusted to obtain the desired coating thickness.
Par exemple, un tel pistolet, muni d'une buse de 0,4 mm, peut être utilisé à une pression d'air comprimé de 2,5 bars.For example, such a gun with a 0.4 mm nozzle can be used at a compressed air pressure of 2.5 bar.
Cette application du mélange liquide de revêtement peut être également effectuée par d'autres modes d'application, tels que par exemple le pinceau, ou encore par trempage des pièces dans un bain.This application of the liquid coating mixture can also be carried out by other modes of application, such as, for example, the brush or by soaking the parts in a bath.
Ces techniques d'application relèvent clairement des compétences de l'homme de l'art et ne sont pas décrites ici de manière détaillée.These application techniques are clearly within the skill of those skilled in the art and are not described here in detail.
L'application du mélange fluide destiné à former le revêtement peut être réalisée à température ambiante ou à une température supérieure. Ainsi, la ou les faces du matériau devant être traitée selon l'invention peut être chauffée de manière à être propice à un séchage rapide de la couche de revêtement appliquée. Dans ce mode de réalisation, au moins la ou les faces du matériau à traiter, voire l'ensemble du matériau, peut être chauffée à une température variant de 25 à 800C, notamment de 30 à 50 0C, conduisant ainsi à l'évaporation du solvant.The application of the fluid mixture for forming the coating can be carried out at ambient temperature or at a higher temperature. Thus, the face or faces of the material to be treated according to the invention can be heated so as to be conducive to rapid drying of the applied coating layer. In this embodiment, at least the face or faces of the material to be treated, or even the whole of the material, can be heated to a temperature ranging from 25 to 80 ° C., especially from 30 to 50 ° C., thus leading to Evaporation of the solvent.
Le mélange liquide dédié à former le revêtement est appliqué en surface de la ou des face(s) à traiter avec une épaisseur adaptée pour empêcher tout craquage durant le séchage, par exemple inférieure à 50 μm.The liquid mixture dedicated to form the coating is applied on the surface of the face (s) to be treated with a thickness adapted to prevent cracking during drying, for example less than 50 microns.
Si nécessaire, il est possible de procéder à une nouvelle application d'une couche du mélange liquide dédiée à former le revêtement sur une première couche de grains de carbure de silicium appliquée et séchée, c'est-à-dire telle que formée à l'issue de l'étape (2).If necessary, it is possible to proceed to a new application of a layer of the liquid mixture dedicated to form the coating on a first layer of grains of silicon carbide applied and dried, that is to say as formed in result of step (2).
Le procédé selon l'invention comprend en outre une étape de chauffage en atmosphère oxydante, à une température et dans un délai suffisants pour permettre la formation d'une couche d'oxyde de silicium en surface des grains de carbure de silicium, voire la décomposition thermique du liant, lorsque celui-ci est présent.The method according to the invention also comprises a heating step in an oxidizing atmosphere, at a temperature and within a time sufficient to allow the formation of a silicon oxide layer on the surface of the silicon carbide grains, or even the decomposition thermal binder, when it is present.
Cette étape est déterminante à plusieurs titres.This step is decisive in many ways.
Tout d'abord, elle a pour vocation de générer, en surface des grains de carbure de silicium formant le revêtement, une couche d'oxyde de silicium.First, it is intended to generate, on the surface of silicon carbide grains forming the coating, a silicon oxide layer.
Ce traitement thermique est donc réalisé en atmosphère oxydante. Il s'agit plus particulièrement de l'air.This heat treatment is therefore carried out in an oxidizing atmosphere. It is more specifically air.
Elle permet donc également si nécessaire d'éliminer le liant lorsque celui-ci est présent. Le traitement thermique est alors réalisé en un temps suffisant pour permettre l'élimination totale du liant organique.It therefore also allows if necessary to remove the binder when it is present. The heat treatment is then carried out in a time sufficient to allow the total elimination of the organic binder.
Avantageusement, cette étape thermique est réalisée à une température inférieure à 1095 0C.Advantageously, this thermal step is carried out at a temperature below 1095 ° C.
Plus particulièrement, l'étape d'oxydation peut être réalisée en atmosphère oxydante pendant 1 à 5 heures à une température variant de 500 0C à 1050 0C, et plus particulièrement de 800 à 1050 0C.More particularly, the oxidation step may be carried out in an oxidizing atmosphere for 1 to 5 hours at a temperature ranging from 500 ° C. to 1050 ° C., and more particularly from 800 ° C. to 1050 ° C.
Dans le cadre de la présente invention, ce traitement thermique est en effet réalisé à une température ajustée pour ne pas modifier la porosité du revêtement formé. En d'autres termes, cette température demeure inférieure à la température requise pour obtenir un frittage du revêtement. De plus à l'issue de ce recuit, le revêtement présente une dureté suffisante vis-à-vis des contraintes mécaniques qu'il aura à subir, typiquement inférieure à 50 Shore A. A l'issue de ce traitement thermique, la pièce est laissée refroidir à température ambiante.In the context of the present invention, this heat treatment is in fact carried out at a temperature adjusted so as not to modify the porosity of the coating formed. In other words, this temperature remains below the temperature required to obtain sintering of the coating. Moreover, at the end of this annealing, the coating has a sufficient hardness with respect to the mechanical stresses it will have to undergo, typically less than 50 Shore A. At the end of this heat treatment, the piece is allowed to cool to room temperature.
La présente invention a également pour objet les matériaux possédant un revêtement formé par le procédé tel que décrit précédemment.The present invention also relates to materials having a coating formed by the method as described above.
Le matériau traité selon l'invention est avantageusement un creuset. Ce creuset est généralement à base de silicium, comme la silice ou le carbure de silicium mais peut également être à base de graphite.The material treated according to the invention is advantageously a crucible. This crucible is generally based on silicon, such as silica or silicon carbide but can also be based on graphite.
L'invention va maintenant être décrite au moyen des exemples suivants donnés bien entendu à titre illustratif et non limitatif de l'invention.The invention will now be described by means of the following examples given of course by way of illustration and not limitation of the invention.
Exemple 1Example 1
Une barbotine, constituée à 23 % de poudre de carbure de silicium, 4 % d'alcool polyvinylique PVA et 73 % d'eau en pourcentages massiques, est passée dans un broyeur planétaire rempli de billes en carbure de silicium ou en agate pour réduire les agglomérats de poudre. La taille des grains de carbure de silicium formés est comprise entre 500 nm et 1 μm.A slip consisting of 23% silicon carbide powder, 4% PVA polyvinyl alcohol and 73% water in percentages by weight is passed through a planetary mill filled with silicon carbide or agate balls to reduce the losses. agglomerates of powder. The size of the grains of silicon carbide formed is between 500 nm and 1 μm.
L'objectif n'étant que de réduire les agglomérats, des billes en nitrure de silicium sont également envisageables, le risque de pollution à l'azote étant très limité.Since the objective is only to reduce agglomerates, silicon nitride balls are also conceivable, the risk of nitrogen pollution being very limited.
Le milieu fluide ainsi formé est ensuite pistoletté (pression d'air comprimé de 2,5 bars, buse de 0,4 mm placée à une trentaine de centimètres du substrat) sur les faces internes d'un creuset (de nature chimique) à revêtir.The fluid medium thus formed is then spray-dried (compressed air pressure 2.5 bar, 0.4 mm nozzle placed at about thirty centimeters from the substrate) on the internal faces of a crucible (of a chemical nature) to be coated. .
Le dépôt ainsi obtenu est séché à l'air chaud à une température inférieure à 5O 0C.The deposit thus obtained is dried with hot air at a temperature below 50 ° C.
On obtient ainsi une sous-couche d'une épaisseur de l'ordre de 50 μm constituée de grains de carbure de silicium liés par le PVA. Cette procédure de pistolettage et de séchage est répétée 3 fois pour obtenir une couche qui est ensuite soumise à un palier de 3h à 1050 0C sous air pour déliantage et oxydation des poudres.This gives an underlayer with a thickness of about 50 microns made of PVA-bonded silicon carbide grains. This pistoletting and drying procedure is repeated 3 times to obtain a layer which is then subjected to a step of 3 hours at 1050 ° C. under air for debinding and oxidation of the powders.
Dans ces conditions, l'épaisseur du revêtement finalement obtenu est de l'ordre de 200 μm, et l'épaisseur de la couche d'oxyde sur les grains de carbure de silicium est de l'ordre de 30 nm.Under these conditions, the thickness of the coating finally obtained is of the order of 200 microns, and the thickness of the oxide layer on the silicon carbide grains is of the order of 30 nm.
Le revêtement obtenu selon la présente invention est très poreux.The coating obtained according to the present invention is very porous.
Pour prévenir l'infiltration du silicium jusqu'au creuset et obtenir des revêtements plus épais, la procédure d'élaboration d'une couche (dépôt de sous couches avec séchage intermédiaire puis recuit haute température pour déliantage et oxydation des poudres) peut être répétée plusieurs fois.To prevent the infiltration of the silicon to the crucible and obtain thicker coatings, the procedure of elaboration of a layer (deposition of layers with intermediate drying then high temperature annealing for debinding and oxidation of the powders) can be repeated several times. times.
D'une manière générale, on considère que 2 couches sont généralement suffisantes pour obtenir l'effet anti-adhérent recherché.In general, it is considered that 2 layers are generally sufficient to obtain the desired anti-adherence effect.
Exemple 2Example 2
Une barbotine, constituée à 52 % de poudre préalablement tamisée, 16 % de polyéthylèneglycol (PEG) et 32 % d'eau en pourcentages massiques est passée dans un broyeur planétaire rempli de billes en carbure de silicium ou en agate pour réduire les agglomérats de poudre. La barbotine est également passée aux ultrasons.A slurry, consisting of 52% pre-sieved powder, 16% polyethylene glycol (PEG) and 32% water in percentages by weight, is passed through a planetary mill filled with silicon carbide or agate balls to reduce powder agglomerates. . The slip is also passed to the ultrasound.
La barbotine est ensuite soit déposée par pistolettage (pression d'air comprimé de 2,5 bars, buse de 0,4 mm placée à une trentaine de centimètres du substrat) ou à l'aide d'un pinceau sur le creuset à revêtir.The slip is then either deposited by spray guns (compressed air pressure of 2.5 bars, 0.4 mm nozzle placed at about thirty centimeters from the substrate) or with the aid of a brush on the crucible to be coated.
Le dépôt ainsi obtenu est séché à l'air ambiant ou chaud (température inférieure à 50 0C).The deposit thus obtained is dried in ambient air or hot (temperature below 50 0 C).
On obtient ainsi une sous-couche d'une épaisseur de l'ordre de 50 μm constituée de poudres liées par le PEG. Cette procédure de pistolettage (ou de pinceau) et de séchage est répétée jusqu'à l'obtention de l'épaisseur de couche souhaitée.This gives an underlayer with a thickness of about 50 microns consisting of powders bound by the PEG. This pistol (or brush) and drying procedure is repeated until the desired layer thickness is obtained.
Cette couche est soumise à un palier de 3h à 900 0C sous air pour délianter et oxyder les poudres.This layer is subjected to a step of 3 hours at 900 ° C. under air to dilute and oxidize the powders.
Dans ces conditions, l'épaisseur de la couche d'oxyde obtenue sur les grains de carbure de silicium est de l'ordre de 30 nm. Exemple 3Under these conditions, the thickness of the oxide layer obtained on the silicon carbide grains is of the order of 30 nm. Example 3
Une barbotine, constituée à 57 % de poudre préalablement tamisée et 43 % d'eau en pourcentages massiques, est passée dans un broyeur planétaire rempli de billes en carbure de silicium ou en agate pour réduire les agglomérats de poudre. La barbotine est également passée aux ultrasons.A slip, consisting of 57% of previously screened powder and 43% of water in percentages by weight, is passed through a planetary mill filled with silicon carbide balls or agate to reduce powder agglomerates. The slip is also passed to the ultrasound.
La barbotine est ensuite soit déposée par pistolettage (pression d'air comprimé de 2,5 bars, buse de 0,4 mm placée à une trentaine de centimètres du substrat) ou à l'aide d'un pinceau sur le creuset à revêtir.The slip is then either deposited by spray guns (compressed air pressure of 2.5 bars, 0.4 mm nozzle placed at about thirty centimeters from the substrate) or with the aid of a brush on the crucible to be coated.
Le dépôt ainsi obtenu est séché à l'air ambiant ou chaud (température inférieure à 50 0C).The deposit thus obtained is dried in ambient air or hot (temperature below 50 0 C).
On obtient ainsi une sous-couche d'une épaisseur de l'ordre de 50 μm constituée de poudres liées par les forces de Van der Waals. Cette procédure de pistolettage (ou de pinceau) et de séchage est répétée jusqu'à l'obtention de l'épaisseur de couche souhaitée. Cette couche est soumise à un palier de 3h à 900 0C sous air pour délianter et oxyder les poudres.This gives an underlayer of a thickness of about 50 microns consisting of powders bound by the Van der Waals forces. This pistol (or brush) and drying procedure is repeated until the desired layer thickness is obtained. This layer is subjected to a step of 3 hours at 900 ° C. under air to dilute and oxidize the powders.
Dans ces conditions, l'épaisseur de la couche d'oxyde obtenue sur les grains de carbure de silicium est de l'ordre de 30 nm.Under these conditions, the thickness of the oxide layer obtained on the silicon carbide grains is of the order of 30 nm.
Références bibliographiquesBibliographical references
(1) Buonassisi et al, J. Crystal Growth 287 (2006) 402-407(1) Buonassisi et al., J. Crystal Growth 287 (2006) 402-407
(2) Bauer et al, Phys. Stat. Sol. (a). 204 (2007) 2190-2195 (2) Bauer et al., Phys. Stat. Ground. (at). 204 (2007) 2190-2195

Claims

REVENDICATIONS
1. Procédé utile pour former un revêtement anti-adhérent, poreux et constitué de grains de carbure de silicium revêtus au moins en partie d'une couche nanométrique de silice en surface de face(s) d'un matériau comprenant au moins les étapes consistant à :A process useful for forming a porous, non-stick coating consisting of silicon carbide grains coated at least in part with a nanometric silica layer at the surface of the face (s) of a material comprising at least the steps of at :
(1) disposer d'un milieu fluide comprenant au moins une dispersion de grains de carbure de silicium,(1) having a fluid medium comprising at least one dispersion of silicon carbide grains,
(2) procéder au dépôt dudit milieu en surface de la ou des face(s) du matériau à traiter en une quantité suffisante pour procurer, au séchage de la composition appliquée, un film formé au moins de grains de carbure de silicium, et(2) depositing said medium on the surface of the surface (s) of the material to be treated in an amount sufficient to provide, upon drying of the applied composition, a film formed of at least silicon carbide grains, and
(3) exposer le matériau traité selon l'étape (2) à un traitement thermique sous atmosphère oxydante et dans des conditions suffisantes pour provoquer la formation d'une couche d'oxyde de silicium en surface des grains de carbure de silicium.(3) exposing the treated material according to step (2) to a heat treatment under an oxidizing atmosphere and under conditions sufficient to cause the formation of a silicon oxide layer on the surface of the silicon carbide grains.
2. Procédé selon la revendication 1, dans lequel l'étape (2) peut être renouvelée une ou plusieurs fois avant mise en œuvre de l'étape (3).2. Method according to claim 1, wherein step (2) can be renewed one or more times before implementation of step (3).
3. Procédé selon l'une quelconque des revendications 1 ou 2, dans lequel l'ensemble des étapes (2) et (3) peuvent être renouvelées au moins une fois à l'issue de l'étape (3).3. Method according to any one of claims 1 or 2, wherein all of the steps (2) and (3) can be renewed at least once at the end of step (3).
4. Procédé selon l'une quelconque des revendications précédentes, dans lequel la composition de l'étape (1) comprend en outre au moins un liant organique.4. Method according to any one of the preceding claims, wherein the composition of step (1) further comprises at least one organic binder.
5. Procédé selon la revendication précédente dans lequel le liant est choisi parmi l'alcool polyvinylique, le polyéthylèneglycol ou encore la carboxyméthylcellulose.5. Method according to the preceding claim wherein the binder is selected from polyvinyl alcohol, polyethylene glycol or carboxymethylcellulose.
6. Procédé selon l'une quelconque des revendications précédentes, dans lequel le milieu fluide associé à l'étape (1) est à base d'eau. 6. Method according to any one of the preceding claims, wherein the fluid medium associated with step (1) is water-based.
7. Procédé selon l'une quelconque des revendications précédentes, dans lequel le milieu fluide de l'étape (1) associe de 0 à 20 % en poids d'au moins un liant, à 20 à 60 % en poids de carbure de silicium.7. Method according to any one of the preceding claims, wherein the fluid medium of step (1) combines from 0 to 20% by weight of at least one binder, to 20 to 60% by weight of silicon carbide. .
8. Procédé selon l'une quelconque des revendications précédentes, dans lequel l'étape (3) est réalisée à une température inférieure à 1095 0C. 8. Process according to any one of the preceding claims, in which step (3) is carried out at a temperature below 1095 ° C.
9. Procédé selon l'une quelconque des revendications précédentes, dans lequel le séchage de l'étape (2) est réalisé à une température variant de 25 à 80 0C, notamment de 30 à 50 0C.9. Process according to any one of the preceding claims, in which the drying of step (2) is carried out at a temperature ranging from 25 to 80 ° C., in particular from 30 to 50 ° C.
10. Procédé selon l'une quelconque des revendications précédentes, dans lequel l'étape (3) peut être réalisée en atmosphère oxydante pendant 1 à 5 heures à une température variant de 500 0C à 1050 0C, et plus particulièrement de 800 à 1050 0C.10. Method according to any one of the preceding claims, wherein step (3) can be carried out in an oxidizing atmosphere for 1 to 5 hours at a temperature ranging from 500 0 C to 1050 0 C, and more particularly from 800 to 1050 0 C.
11. Procédé selon l'une quelconque des revendications précédentes, dans lequel le dépôt de l'étape (2) est effectué au pinceau et/ou au pistolet.11. Method according to any one of the preceding claims, wherein the deposition of step (2) is carried out by brush and / or spray.
12. Procédé selon l'une quelconque des revendications précédentes, dans lequel la couche poreuse formée de grains de carbure de silicium peut posséder une épaisseur variant de 5 μm à 1 mm, en particulier de 10 μm à 200 μm.12. Method according to any one of the preceding claims, wherein the porous layer formed of silicon carbide grains may have a thickness ranging from 5 microns to 1 mm, in particular from 10 microns to 200 microns.
13. Procédé selon l'une quelconque des revendications précédentes, dans lequel la couche de silice, formée en surface des grains de carbure de silicium, elle peut posséder une épaisseur variant de 2 à 100 nm, et notamment de 10 à 30 nm. 13. The method as claimed in any one of the preceding claims, in which the silica layer, formed on the surface of the silicon carbide grains, may have a thickness ranging from 2 to 100 nm, and in particular from 10 to 30 nm.
14. Procédé selon l'une quelconque des revendications précédentes, dans lequel ledit matériau est choisi parmi la silice, le carbure de silicium et le graphite.The method of any one of the preceding claims, wherein said material is selected from silica, silicon carbide, and graphite.
15. Matériau possédant un revêtement formé selon l'une quelconque des revendications précédentes.15. A material having a coating formed according to any one of the preceding claims.
16. Matériau selon la revendication 15, caractérisé en ce qu'il s'agit d'un creuset. 16. Material according to claim 15, characterized in that it is a crucible.
EP09741363A 2008-09-05 2009-09-03 Process for forming a non-stick coating based on silicon carbide Withdrawn EP2347037A1 (en)

Applications Claiming Priority (2)

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FR0855971A FR2935618B1 (en) 2008-09-05 2008-09-05 PROCESS FOR FORMING ANTI-ADHERENT COATING BASED ON SILICON CARBIDE
PCT/FR2009/051666 WO2010026342A1 (en) 2008-09-05 2009-09-03 Process for forming a non-stick coating based on silicon carbide

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KR101451322B1 (en) 2014-10-15
FR2935618A1 (en) 2010-03-12
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BRPI0918852A2 (en) 2015-12-08
CN102144053B (en) 2014-03-26
JP5492208B2 (en) 2014-05-14
CN102144053A (en) 2011-08-03
US20110268958A1 (en) 2011-11-03
KR20110069043A (en) 2011-06-22
FR2935618B1 (en) 2011-04-01
RU2011107880A (en) 2012-10-10
WO2010026342A1 (en) 2010-03-11

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