EP2342758A2 - Pile photovoltaïque et procédé de fabrication d'une pile photovoltaïque - Google Patents

Pile photovoltaïque et procédé de fabrication d'une pile photovoltaïque

Info

Publication number
EP2342758A2
EP2342758A2 EP09788336A EP09788336A EP2342758A2 EP 2342758 A2 EP2342758 A2 EP 2342758A2 EP 09788336 A EP09788336 A EP 09788336A EP 09788336 A EP09788336 A EP 09788336A EP 2342758 A2 EP2342758 A2 EP 2342758A2
Authority
EP
European Patent Office
Prior art keywords
solar cell
neodymium
layer
ytterbium
sulfide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09788336A
Other languages
German (de)
English (en)
Inventor
Benard MEESTER
Marius Nanu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thin Film Factory BV
Original Assignee
Advanced Surface Technology BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Surface Technology BV filed Critical Advanced Surface Technology BV
Priority to EP09788336A priority Critical patent/EP2342758A2/fr
Publication of EP2342758A2 publication Critical patent/EP2342758A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a solar cell and method of manufacturing a solar cell.
  • Conversion efficiency depends on the wavelength, or spectrum of wavelengths of incoming radiation.
  • the bandgap energy of the semi-conductor material in which the conversion takes place determines a wavelength of optimal efficiency.
  • the conversion involves use of the energy of incoming photons to transfer electrons and/or holes to cross the bandgap. For a direct transfer a photon with at least the wavelength corresponding to the bandgap energy is needed. Conventionally, light with higher wavelength cannot be converted and additional energy of photons with smaller wavelength only leads to dissipation that does not contribute to the current.
  • Vergeer also mentions the possibility of using combinations of different types of ions as a donor and an acceptor.
  • the donor ion receives the incoming photon and energy of the donor ion is transferred stepwise to two acceptor ions. This process is generally known as down-conversion.
  • Examples of known donor-acceptor combinations are Gd3+— Eu3+ couples, Gd3+— Er3+, Gd3+-Tb3+-Er3+, and Nd3+- Ce3+ and Tb3+ - Yb3+.
  • high energy radiation is down-converted to visible radiation.
  • Vergeer et al describe detailed measurements and predictions using Tb3+ - Yb3+ as donor and acceptors in a fluoride or oxide host.
  • a combination of Neodymium-Ytterbium is used to provide for quantum cutting.
  • This combination has been found to be suitable to provide for quantum cutting. It provides for a first order quantum cutting decay process, because Neodymium has an excitation level in the right wavelength range and an intermediate level about halfway below the excitation level, which allows for efficient conversion of excitation of the excitation level to lower excited levels.
  • a host with only relatively heavy elements is used, for example a metal sulfide host is, or a Phosphide or heavier element instead of Sulfur, for example using Chlorides or Bromides instead of Sulfides.
  • the use of only heavy elements has the advantage that less radiation free decay of the excited levels occurs than in the case of oxides or fluorides.
  • Ytterbium doped Neodymium sulfide or Neodymium doped Ytterbium sulfide may be used for example. In an example doping with a concentration in a range of zero to ten percent may be used.
  • Neodymium When irradiated by light, Neodymium is first excited. Relaxation of the excited level produces excitation of the intermediate level of the Neodymium and an excitation level of Ytterbium, which may both relapse under emission of a photon. Also the excited intermediate level of Neodymium may give rise to an additional excitation of Ytterbium at about the same level, which may relapse under emission of a photon.
  • Figure 2 shows absorption spectra of Neodymium en Ytterbium Sulfide and emission spectra of ytterbium doped neodymium sulfide.
  • Ytterbium sulfide a weak absorption band was found at 975 nm.
  • Neodymium sulfide composite absorption bands were found at 476, 525, 581, 684, 748 en 804 nm.
  • Neodymium and annealing In Yb doped indium sulfide or zincindiumsulfide layers quantum cutting may be based on impurity bound exiton emission from the host lattice to an excited state of the Yb-ion followed by a transition from this excited state to the ground state.
  • An alternative possibility is to use excited states of two different adjacent rare earth ions as shown for Gd-Eu.
  • Nd-Yb may also be used.
  • neodymium sulfide doped with ytterbium has been studied.
  • compositions for example a phosphide, chloride or bromide.
  • the Neodymium and Ytterbium may be used as doping ions introduced into a semi-conductor, to provide for quantum cutting.
  • doping with a concentration in a range of zero to ten percent may be used.
  • Indium Sulfide may be used as the semi- conductor
  • Indium Sulfide has a bandgap of about 2.6ev. To realize efficient quantum cutting a bandgap that is slightly larger than the excitation level of Neodymium is preferably used.
  • Indium Sulfide provides about the right bandgap and bandgap tuning makes it possible to optimize the bandgap for quantum cutting.
  • Neodymium and Ytterbium doped Indium Sulfide may be used on its own as a downconversion layer in front of a solar cell, or it may be used as one of the active layers of a solar cell. In either case, it is preferred that the bandgap of the layer of the solar cell that is used to convert the downconverted photons to electric current is lower that the energy of the photons produced by quantum cutting (about 1.3 eV in the case of Neodymium and Ytterbium). Copper Indium Sulfide (CIS) may be used for this layer. The bandgap of CIS is about 1.35ev. This bandgap can be tuned by adjusting the composition of the CIS layer and/or its crystal structure.
  • FIG. 3 shows layers in an example of a solar cell.
  • the solar cell successively comprises layers comprising a float glass substrate, a front contact, a transparent conductive oxide layer, a TiO2 layer, a buffer layer, an In2S3 layer, a CIS layer and a metal film.
  • This type of solar cell is known per se.
  • the In2S3 layer and the CIS layer form the p and n type active layers of the solar cell.
  • the active layers of a solar cell are the layers that provide for the junction at which charge separation of excitations takes place to generate net electric current. Typically, these excitations are generated by absorption of photons in at least one of the active layers.
  • Neodymium and Ytterbium have been added as doping to the semi-conducting In2S3 active layer.
  • Figure 4 shows energy levels and transitions of Neodymium and Ytterbium between a conduction band CB and a valence band VB of a semiconductor in more detail.
  • the use of these two bandgaps facilitates the implementation of quantum cutting.
  • the Indium Sulfide bandgap is adjusted to a level above that of the excitation level of Neodymium.
  • photons may be used to excite electrons in the conduction band of the semiconductor first, from which the electrons excite the Neodymium.
  • the CIS bandgap is adjusted to a level just below of the energy of the photons produced by quantum cutting due to Neodymium and Ytterbium.
  • the bandgaps of Indium Sulfide and CIS make such a combination possible.
  • the experiments show that the combination of Nd-Yb can provide for downconversion.
  • This combination may provide for increased efficiency of CIS solar cells as well as Si solar cells or other solar cells.
  • the Neodymium- Ytterbium doped Indium sulfide may be used as one of the active layers of the solar cell, or it may be provided as a separate layer to provide for down-conversion.
  • Si solar cells it may be used as a separate layer.
  • Any technique may be used to provide for a host material with added Nd and/or Yb.
  • Spraying may be used to deposit the sulfide host material, for example. Spraying has the advantage of providing for a low-cost manufacturing technique. It is desirable to obtain a uniform distribution of Nd en Yb in the sulfide. It has been found that simple spraying of a mixture of Nd en Yb in Indium Sulfide does not provide for a satisfactory such a uniform distribution. A subsequent diffusion step in the resulting solid state material may be used. It is known that diffusion processes occur efficiently from at least several hundred degrees below the melting point of the host. The melting point of In2S3 is about 1050 centigrade.
  • Annealing at temperatures of about 600- 700 centigrade may therefore be used.
  • such an anneal step is perform in a H2S or sulfur atmosphere to preserve the optical properties of Indium sulfide, i.e. to preserve the bandgap.
  • ion beam implantation may be used to implant the Neodymium and/or Ytterbium.
  • spraying other techniques may be used to grow the host material.
  • Yttrium sulfide or Lanthanum with a tuned bandgap and absorption coefficient may be an alternative.
  • La2S3 has a reported bandgap of 2.5 eV, which could be increased to 2.6eV by doping.
  • Lanthanum is closely related to ytterbium and neodymium and has a comparable ion diameter, which makes incorporation of ytterbium and neodymium in a Lanthanum lattice easier.
  • the resulting material may be considered as an n-type layer of a CIS cell.
  • Quantum blended into an isolator material may be added.
  • a layer of Quantum Dots in an insulator may be used to create an intermediate band in a way which is known per se. Dot size can be used to tune the level of this band. Dot sizes (diameters) from a range of 2 to 15 nm may be used for example. In an alternative embodiment a high band gap semiconductor layer may be used as an absorber matrix instead of the insulator.
  • the band or bands realized with the Quantum Dots provide for multistep conversion wherein a plurality of photons is used to generate one electron in a higher energy conduction band in a plurality of steps. In addition, it may be used to increase the output voltage of the solar cell.
  • the expression “dot size” refers to the diameter of the dot if the dot is spherically shaped.
  • the expression “dot size” refers to a shortest distance interconnecting a pair of separate points on opposite dot wall sections, e.g. a length or width of the dot.
  • the Quantum Dots may be synthesized by colloidal chemistry. SnS, Cu2SnS3, Cu2SnS4 or PbS may be used in the quantum dots for example. In an embodiment any material wit a tunable bandgap between 0.5 and 0.9 times the bandgap of the insulator or high band gap semiconductor may be used.
  • the absorber matrix with Quantum Dots is realized by means of spray deposition. This may involve preparing a liquid containing the absorber material plus the Quantum Dots as solid particles in the liquid and subsequently spraying the liquid onto a substrate.
  • the Quantum Dots are doped so that half the intermediate band is filled with electrons.
  • filling of a band depends on the location of the Fermi level. This level can be adapted by doping.
  • Figure 5 shows an embodiment of a solar cell wherein a plurality of layers is provided in an absorber matrix, each layer with quantum dots of a size that is specific to the layer.
  • the solar cell successively comprises a transparent contact layer, an n-type semiconductor layer, an insulator or high band gap semiconductor, a p-type semiconductor layer, and a back contact.
  • the absorber matrix layer is made of an isolator.
  • the N-type semiconductor layer, the absorber matrix layer and the p-type semiconductor layer metal layers may form a PIN layer structure.
  • a semi- conductor material may be used as absorber matrix.
  • n-type semiconductor layer and/or p-type semiconductor layer metal layers may be used to realize metal on semi-conductor junctions.
  • Quantum dots are embedded in the absorber matrix layer.
  • the average size of the quantum dots varies over the depth of the absorber matrix layer.
  • the variation of the size defines a plurality of layers within the absorber matrix, each layer with quantum dots of a specific size.
  • the sizes used for different layers are mutually different. Thus a plurality of intermediate bands at different levels may be realized. This provides for absorption from a wider part of the spectrum of incoming light.
  • a first layer with quantum dots with a first average size of between 2 nm and 15 nm e.g. 2 nm
  • a second layer with a different average size of between 2 nm and 15 nm e.g. 15nm
  • substantially dots with substantially identical size particular to the layer are used within a layer. Further layers with other sizes may be used in addition.
  • manufacture of the solar cell comprises preparing liquids containing the absorber material plus the Quantum Dots as solid particles of respective average sizes and spraying the liquids successively onto a substrate.
  • the size of the dots varies in steps as a function of the depth in the absorber matrix layer (from the n type semiconductor layer to the p-type semiconductor layer).
  • the size of the quantum dots may be varied continuously as a function of the depth.
  • effectively a metal-semiconductor junction is used to generate the current for the excitations produced by the incoming light.
  • a solar cell is realized from two semiconductor materials (n and p-type) with the matrix with the Quantum DOTs in between.
  • a heterojunction structure may be used.
  • Indium sulfide and CIS layers may be used in a heterojunction structure for example.
  • the quantum dots may be included in an isolator layer or a semiconductor with high band gap.
  • the quantum dots may be used irrespective of whether down conversion is used (for example with Neodymium Ytterbium). When down- conversion is used, it is preferred to put the doping in the layer with the highest bandgap and the quantum dots in an added isolating layer or in the layer with the lowest bandgap, for example down-conversion doping such as Neodymium Ytterbium in the Indium Sulfide layer and quantum dots in the CIS heterojunction. In this case quantum dots of a single size may suffice, but a quantum dot size that varies with depth is used. This increases efficiency.
  • the upconversion with the assistance of quantum dots is compatible with down conversion using quantum cutting.
  • a combination of both may be used to realize a highly efficient solar cell.
  • Such cells can be manufactured using low cost manufacturing techniques like spray deposition.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une pile photovoltaïque pourvue d'un convertisseur-abaisseur qui convertit les photons à haute énergie arrivant en deux photons ou en photons d'énergie inférieure avant la conversion en courant électrique, de façon à permettre une conversion plus efficace. Ce convertisseur-abaisseur comprend une combinaison d'ions de néodyme et d'ytterbium dans un sulfure. Le sulfure peut être un sulfure d'indium, dopé au néodyme et à l'ytterbium. Le sulfure d'indium peut être combiné à une couche CIS (sulfure de cuivre et d'indium) pour former les couches actives de la pile photovoltaïque, ou bien, le sulfure avec néodyme et ytterbium peut être utilisé comme filtre séparée avant la conversion en courant électrique. Une cellule photovoltaïque peut être équipée d'un convertisseur élévateur réalisé au moyen de points quantiques dans une matrice absorbante.
EP09788336A 2008-09-23 2009-09-23 Pile photovoltaïque et procédé de fabrication d'une pile photovoltaïque Withdrawn EP2342758A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP09788336A EP2342758A2 (fr) 2008-09-23 2009-09-23 Pile photovoltaïque et procédé de fabrication d'une pile photovoltaïque

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08164942A EP2166577A1 (fr) 2008-09-23 2008-09-23 Cellule solaire et son procédé de fabrication
EP09788336A EP2342758A2 (fr) 2008-09-23 2009-09-23 Pile photovoltaïque et procédé de fabrication d'une pile photovoltaïque
PCT/NL2009/050572 WO2010036109A2 (fr) 2008-09-23 2009-09-23 Pile photovoltaïque et procédé de fabrication d'une pile photovoltaïque

Publications (1)

Publication Number Publication Date
EP2342758A2 true EP2342758A2 (fr) 2011-07-13

Family

ID=40467263

Family Applications (2)

Application Number Title Priority Date Filing Date
EP08164942A Withdrawn EP2166577A1 (fr) 2008-09-23 2008-09-23 Cellule solaire et son procédé de fabrication
EP09788336A Withdrawn EP2342758A2 (fr) 2008-09-23 2009-09-23 Pile photovoltaïque et procédé de fabrication d'une pile photovoltaïque

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP08164942A Withdrawn EP2166577A1 (fr) 2008-09-23 2008-09-23 Cellule solaire et son procédé de fabrication

Country Status (2)

Country Link
EP (2) EP2166577A1 (fr)
WO (1) WO2010036109A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012026780A1 (fr) * 2010-08-27 2012-03-01 Rohm And Haas Electronic Materials Korea Ltd. Nouveaux composés électroluminescents organiques et dispositif électroluminescent organique les utilisant
JP5745958B2 (ja) 2011-07-07 2015-07-08 トヨタ自動車株式会社 光電変換素子
KR101928584B1 (ko) 2012-10-24 2018-12-13 전남대학교산학협력단 형광체를 포함하는 태양전지 및 이의 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5720827A (en) * 1996-07-19 1998-02-24 University Of Florida Design for the fabrication of high efficiency solar cells
ES2149137B1 (es) * 1999-06-09 2001-11-16 Univ Madrid Politecnica Celula solar fotovoltaica de semiconductor de banda intermedia.
US9040816B2 (en) * 2006-12-08 2015-05-26 Nanocopoeia, Inc. Methods and apparatus for forming photovoltaic cells using electrospray

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2010036109A2 *

Also Published As

Publication number Publication date
WO2010036109A2 (fr) 2010-04-01
EP2166577A1 (fr) 2010-03-24
WO2010036109A3 (fr) 2010-05-20

Similar Documents

Publication Publication Date Title
Lee et al. Passivation of grain boundaries by phenethylammonium in formamidinium-methylammonium lead halide perovskite solar cells
Ma et al. Stable yellow light-emitting devices based on ternary copper halides with broadband emissive self-trapped excitons
Zhou et al. Impact of host composition, codoping, or tridoping on quantum-cutting emission of ytterbium in halide perovskite quantum dots and solar cell applications
Zhou et al. Defect activity in metal halide perovskites with wide and narrow bandgap
Wang et al. Colloidal quantum dot ligand engineering for high performance solar cells
US8039736B2 (en) Photovoltaic up conversion and down conversion using rare earths
CN110603622B (zh) 用于功函数减少和热离子能量变换的系统和方法
KR101431658B1 (ko) 양자 점 구조물들을 이용한 반도체 구조물 및 소자들의 제조 방법들 및 관련된 구조물들
Chen et al. An overview of rare earth coupled lead halide perovskite and its application in photovoltaics and light emitting devices
US20090095341A1 (en) Solar Modules With Enhanced Efficiencies Via Use of Spectral Concentrators
US10896991B2 (en) Photovoltaic devices and method of manufacturing
US20160093448A1 (en) Photocatalyst material and photocatalyst device
US8039738B2 (en) Active rare earth tandem solar cell
Li et al. Efficient perovskite solar cells enabled by ion-modulated grain boundary passivation with a fill factor exceeding 84%
Cai et al. Anti-Stokes ultraviolet luminescence and exciton detrapping in the two-dimensional perovskite (C6H5C2H4NH3) 2PbCl4
CA2886431A1 (fr) Composant photovoltaique a fort rendement de conversion
CN103782394B (zh) 太阳能电池和该太阳能电池的制造方法
Cosentino et al. Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices
Rakshit et al. Combining perovskites and quantum dots: synthesis, characterization, and applications in solar cells, LEDs, and photodetectors
US4082889A (en) Luminescent material, luminescent thin film therefrom, and optical display device therewith
Chen et al. Upconversion of low-energy photons in semiconductor nanostructures for solar energy harvesting
Binetti et al. Key success factors and future perspective of silicon‐based solar cells
EP2166577A1 (fr) Cellule solaire et son procédé de fabrication
Liu et al. Capping vertically aligned InGaAs/GaAs (Sb) quantum dots with a AlGaAsSb spacer layer in intermediate‐band solar cell devices
US7847187B2 (en) Photovoltaic cell comprising a photovoltaically active semiconductor material comprising a particular portion of tellurium ions replaced with halogen and nitrogen ions

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20110426

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

AX Request for extension of the european patent

Extension state: AL BA RS

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: THIN FILM FACTORY B.V.

RIN1 Information on inventor provided before grant (corrected)

Inventor name: NANU, MARIUS

Inventor name: MEESTER, BERNARD

DAX Request for extension of the european patent (deleted)
111Z Information provided on other rights and legal means of execution

Free format text: AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

Effective date: 20120118

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20140401