EP2309518A3 - Method for producing a scintillation material with low voltage birefringence and high homogeneity of the refraction index - Google Patents

Method for producing a scintillation material with low voltage birefringence and high homogeneity of the refraction index Download PDF

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Publication number
EP2309518A3
EP2309518A3 EP10186428A EP10186428A EP2309518A3 EP 2309518 A3 EP2309518 A3 EP 2309518A3 EP 10186428 A EP10186428 A EP 10186428A EP 10186428 A EP10186428 A EP 10186428A EP 2309518 A3 EP2309518 A3 EP 2309518A3
Authority
EP
European Patent Office
Prior art keywords
producing
high homogeneity
low voltage
refraction index
scintillation material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10186428A
Other languages
German (de)
French (fr)
Other versions
EP2309518A2 (en
Inventor
Johann-Christoph Von Saldern
Christoph Seitz
Lutz Parthier
Jochen Alkemper
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hellma Materials GmbH and Co KG
Original Assignee
Schott AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott AG filed Critical Schott AG
Publication of EP2309518A2 publication Critical patent/EP2309518A2/en
Publication of EP2309518A3 publication Critical patent/EP2309518A3/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/7719—Halogenides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Luminescent Compositions (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)

Abstract

Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung von Szintillationsmaterialien, die ein geringe Spannungsdoppelbrechung und hohe Homogenität der Brechzahl aufweisen. Die Szintillationsmaterialien basieren beispielsweise auf Lanthanhalogeniden, dotiert oder undotiert. Sie weisen hervorragende Detektionseigenschaften auf. Die Materialien können einkristallin und polykristallin vorliegen. Sofern es sich um kristalline Materialien handelt, sind diese in vorzugsweisen Größen mit bis zu 5 cm3 herstellbar.The present invention relates to a method for producing scintillation materials which have a low stress birefringence and high homogeneity of the refractive index. The scintillation materials are based, for example, on lanthanum halides, doped or undoped. They have excellent detection properties. The materials may be monocrystalline and polycrystalline. If they are crystalline materials, they can be produced in preferred sizes of up to 5 cm 3 .

EP10186428A 2009-10-09 2010-10-04 Method for producing a scintillation material with low voltage birefringence and high homogeneity of the refraction index Withdrawn EP2309518A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200910045520 DE102009045520A1 (en) 2009-10-09 2009-10-09 Process for the preparation of scintillation materials with low birefringence and high homogeneity of the refractive index

Publications (2)

Publication Number Publication Date
EP2309518A2 EP2309518A2 (en) 2011-04-13
EP2309518A3 true EP2309518A3 (en) 2012-06-27

Family

ID=43430367

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10186428A Withdrawn EP2309518A3 (en) 2009-10-09 2010-10-04 Method for producing a scintillation material with low voltage birefringence and high homogeneity of the refraction index

Country Status (2)

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EP (1) EP2309518A3 (en)
DE (1) DE102009045520A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2555901C1 (en) * 2014-04-16 2015-07-10 Общество с ограниченной ответственностью Научно-производственное предприятие "Радиационный контроль. Приборы и методы" (ООО НПП "РАДИКО") Method of obtaining scintillation monocrystals based on lanthanum bromide

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1801183A2 (en) * 2005-12-20 2007-06-27 General Electronic Company Scintillator compositions, and related processes and articles of manufacture
US20070272898A1 (en) * 2004-04-12 2007-11-29 Akira Yoshikawa Solid Solution Material Of Rare Earth Element Fluoride (Polycrystal And Single Crystal), And Method For Preparation Thereof, And Radiation Detector And Test Device
US20080067391A1 (en) * 2006-09-20 2008-03-20 Hitachi Chemical Company, Ltd., Scintillator crystal and radiation detector
WO2008096889A1 (en) * 2007-02-07 2008-08-14 National Institute For Materials Science Iodide single crystal, method for production the iodide single crystal, and scintillator comprising the iodide single crystal

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3222567C2 (en) * 1982-06-16 1986-06-05 Schott Glaswerke, 6500 Mainz Colorless barium silicate glass containing cerium and phosphorus with good scintillation properties
US7060982B2 (en) * 2003-09-24 2006-06-13 Hokushin Corporation Fluoride single crystal for detecting radiation, scintillator and radiation detector using the single crystal, and method for detecting radiation
US7405404B1 (en) 2004-09-23 2008-07-29 Radiation Monitoring Devices, Inc. CeBr3 scintillator
US20080011953A1 (en) 2006-07-11 2008-01-17 General Electric Company Scintillator composition, article, and associated method
US20080131347A1 (en) 2006-12-04 2008-06-05 General Electric Company Scintillation compositions and method of manufacture thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070272898A1 (en) * 2004-04-12 2007-11-29 Akira Yoshikawa Solid Solution Material Of Rare Earth Element Fluoride (Polycrystal And Single Crystal), And Method For Preparation Thereof, And Radiation Detector And Test Device
EP1801183A2 (en) * 2005-12-20 2007-06-27 General Electronic Company Scintillator compositions, and related processes and articles of manufacture
US20080067391A1 (en) * 2006-09-20 2008-03-20 Hitachi Chemical Company, Ltd., Scintillator crystal and radiation detector
WO2008096889A1 (en) * 2007-02-07 2008-08-14 National Institute For Materials Science Iodide single crystal, method for production the iodide single crystal, and scintillator comprising the iodide single crystal

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KORCZAK W ET AL: "Crystal growth and temperature variation of the lattice parameters in LaF3, CeF3, PrF3 and NdF3", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 61, no. 3, 1 April 1983 (1983-04-01), pages 601 - 605, XP024437499, ISSN: 0022-0248, [retrieved on 19830401], DOI: 10.1016/0022-0248(83)90188-4 *
SEJIN RA ET AL: "Luminescence and Scintillation Properties of a CeBr Single Crystal", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 55, no. 3, 1 June 2008 (2008-06-01), pages 1221 - 1224, XP011216735, ISSN: 0018-9499 *

Also Published As

Publication number Publication date
EP2309518A2 (en) 2011-04-13
DE102009045520A1 (en) 2011-04-14

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