EP2267832A1 - Système intégré comprenant un guide d'ondes sur un appareil de couplage de microruban - Google Patents

Système intégré comprenant un guide d'ondes sur un appareil de couplage de microruban Download PDF

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Publication number
EP2267832A1
EP2267832A1 EP09179861A EP09179861A EP2267832A1 EP 2267832 A1 EP2267832 A1 EP 2267832A1 EP 09179861 A EP09179861 A EP 09179861A EP 09179861 A EP09179861 A EP 09179861A EP 2267832 A1 EP2267832 A1 EP 2267832A1
Authority
EP
European Patent Office
Prior art keywords
waveguide
multilayer
antenna
microstrip line
integrated system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09179861A
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German (de)
English (en)
Inventor
Amin Enayati
Steven Brebels
Walter De Raedt
Guy Vandenbosch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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Publication of EP2267832A1 publication Critical patent/EP2267832A1/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions

Definitions

  • the present invention relates to a device incorporating signal coupling between a waveguide and a microstrip.
  • a first solution proposes to design and manufacture all of the needed components in waveguides as the main transmission line.
  • a second solution one can design and fabricate different components in a multilayer planar process and afterwards connect them to a waveguide using a suitable transition element.
  • the transition from the planar transmission line to the waveguide port plays an important role.
  • FIG. 1 shows a symbolic view of an RF front-end (b), an antenna (c) and a mode converter (microstrip-to-waveguide transition element) (a).
  • the present invention provides an integrated system comprising a waveguide-to-microstrip coupling apparatus providing a transition element for efficient high frequency signal transmission between a local-oscillator and an RF chip, then to an antenna.
  • the transition element and the antenna are integrated in a multilayer system, and the antenna and the RF chip are each located at opposite sides of the multilayer system.
  • the multilayer system may comprise a plurality of conductive layers.
  • the plurality of conductive layers may be separated from each other by mean of insulating material, for example layers of insulating material.
  • the multilayer system may for example be any of a multilayer PCB (printed circuit board), LTCC (Low Temperature Co-fired Ceramic), MCM (Multi-Chip Module).
  • the multilayer system may comprise a first conductive (e.g. metal) layer designed as a microstrip line and a second conductive (e.g. metal) layer designed as ground.
  • the ground layer may be the conductive layer closest to the microstrip line. Including the ground line of the microstrip structure in the multilayer system improves the integration and hence reduces area used.
  • the integrated system furthermore comprises a waveguide, for example perpendicularly connected to the multilayer system.
  • the waveguide may be connected to the multilayer system at the side remote from the antenna. This reduces the scattering effect of the waveguide part on the antenna radiation part.
  • the microstrip line may have a resonance with the waveguide encompassing high frequency signals, e.g. signals with a frequency between 40 and 70 GHz, to be conducted by the device.
  • the waveguide may have a top cavity attached to the top layer of the multilayer system.
  • the top layer of the multilayer system is an outer layer of the multilayer system which is located at a side of the multilayer system remote from the side onto which the waveguide is attached.
  • the top cavity may be implemented in the multilayer system, for example at a side of the multilayer system remote from the side onto which the waveguide is attached.
  • the top cavity of the waveguide may be provided at a same side of the multilayer structure as where the antenna is provided.
  • the top cavity may be much smaller than the input or output of the waveguide.
  • the waveguide may further have a wall opening adjacent the multilayer system through which the microstrip line extends.
  • the multilayer system may comprise a plurality of conductive layers and a plurality of dielectric layers.
  • the plurality of conductive layers may be designed so as to provide impedance matching between a waveguide signal and a signal on the microstrip line. It is an advantage of such impedance matching that it provides better signal transmission.
  • the conductive layers of the multilayer system may contain openings or irises for matching the signals from the microstrip line to the waveguide and vice versa, thereby reducing effective area of structure, without the requirement of an extra matching device, nor a specific probe design.
  • At least one of the irises in the conductive layers may be designed so as to provide impedance matching between a waveguide signal and a signal on the microstrip line.
  • the design of the conductive layers may include determining a shape of the irises and/or dimensions of the irises and/or shift of the centre of the irises with respect to the centre of the waveguide and/or shift of the centre of the irises with respect to the centre of the top cavity.
  • the number of available irises determined by the number of available conductive layers in the multilayer structure, is a design parameter for determining the available bandwidth of the integrated structure.
  • the integrated system may further comprise thru metalized vias for connecting different layers of the multilayer system.
  • one of the conductive (e.g. metal) layers of the multilayer system is designed as an antenna, preferably a layer situated on an opposite side of the waveguide. This reduces the scattering effect of the waveguide part on the antenna radiation pattern.
  • the antenna is designed in the top conductive layer of the multilayer system.
  • the top cavity of the waveguide is designed in the multilayer structure. In an alternative embodiment, the top cavity is provided separately from the multilayer structure and is connected thereto.
  • the multilayer system is a PCB or any other multilayer technology known to a person skilled in the art, e.g. LTCC (Low Temperature Co-fired Ceramic) or MCM (Multi-Chip Module).
  • LTCC Low Temperature Co-fired Ceramic
  • MCM Multi-Chip Module
  • the overall integrated device in accordance with embodiments of the present invention provides a low complex device (being mechanically simple) whereby the several components can be implemented in or mounted on the same technology.
  • the overall effective cost is kept to a minimum.
  • the proposed design allows the required broadband operation with good performances (low losses, operation ranges, ...)
  • using the multilayer structure can increase the working bandwidth of the probe-fed waveguide-to-microstrip transition device, i.e. the waveguide-to-microstrip transition device where the microstrip line is introduced into a slot in the waveguide.
  • top, bottom, over, under and the like in the description and the claims are used for descriptive purposes and not necessarily for describing relative positions. The terms so used are interchangeable under appropriate circumstances and the embodiments of the invention described herein can operate in other orientations than described or illustrated herein.
  • the transition element and the antenna are integrated in a multilayer system.
  • a first layer of the multilayer system may be designed as a microstrip line, and a second layer of the multilayer system may be designed as ground.
  • the antenna and the RF chip are each located at opposite sides of the multilayer system. This way, interference between the antenna and the RF chip is reduced, even if both are placed on a small footprint, especially in view of conductive layers being present between the RF chip and the antenna. Hence this solution is cost effective (area cost).
  • the waveguide to microstrip transition element may comprise a waveguide port for connecting, for example perpendicularly, a waveguide to the multilayer system.
  • the multilayer system may be a PCB multilayer.
  • a waveguide connected to the transition element may have a top cavity attached to the multilayer system, for example to a top layer thereof, and a wall opening adjacent the multilayer system through which a microstrip line extends.
  • the microstrip line may be implemented in a bottom layer of the multilayer system, hence the waveguide may be connected to the side of the multilayer structure where the microstrip line is provided.
  • the transition element may further comprise thru metalized vias for connecting the top and bottom layers of the multilayer system.
  • one of the layers of the multilayer system is designed as a (microstrip) antenna, preferably the top layer of multilayer system.
  • the top cavity of the waveguide may be applied at the side of the multilayer system where the antenna is provided.
  • An RF front-end chip may then be attached to the bottom layer of the multilayer system, so that antenna and RF front-end chip are located at opposite sides of the multilayer system.
  • FIG. 2 shows an integrated system according to a first embodiment of the present invention.
  • the RF frontend chip (1) and the antenna (2) are on different sides of the multilayer structure (3). So the interaction of the antenna radiation pattern and the RF frontend chip is minimized.
  • FIG. 2(b) shows the exact build up which contains two waveguide parts (4) and (5) and a multilayer structure (3) with 4 conductive layers.
  • the top waveguide part (4) acts as a cavity to reflect the wave into the microstrip line (6) while the bottom waveguide part (5) carries the wave in and out of the transition element (7).
  • the waveguide opening (9) allows the wave to couple to the microstrip line (6) which is patterned on layer 4 of the multilayer structure (3).
  • the slots (10) are designed so as to provide matching between a waveguide signal and a signal on the microstrip line or vice versa.
  • layer 3 not only does contain a slot to help the matching procedure, but also it plays the role of the ground plane (11) of the microstrip line which shields the RF frontend chip (1) from the antenna (2) as well, hence reducing interference between these components.
  • a microstrip line is used in the waveguide to guide the electromagnetic wave from the waveguide to the microstrip line.
  • the microstrip line is manufactured on the multilayer structure, such as for example a multilayer PCB.
  • This multilayer PCB is sandwiched between two conductive, e.g. metallic, waveguide parts (4) and (5).
  • FIG. 3 shows a cross section of the waveguide parts (4) and (5), along with the layers of the multilayer PCB (3).
  • the transition element shown in this figure is composed of a waveguide part at the bottom.
  • the waveguide (5) used in this example is the V-band waveguide with the standard name WR-15 and the dimensions of 3.759 mm x 1.880 mm. This part obviously caries the electromagnetic wave through the first waveguide mode towards the microstrip line (6).
  • an opening is made in the wall of the waveguide with transverse dimensions of 1 mm x 1 mm. This opening is small enough that the cut-off frequency of the first electromagnetic mode in rectangular waveguide resulted within this opening is well above the highest operation frequency. Consequently, the energy coupled to the microstrip line will have a purely microstrip mode distribution.
  • the microstrip line is manufactured in a multilayer technology, such as e.g. a PCB technology (3).
  • the base material used for the multilayer PCB in the example described is nelco4000. This material has a permittivity of 3.9 ⁇ 0.2 and a loss tangent of 0.03 ⁇ 0.005 at 60GHz.
  • the black bold lines represent the metallic patterned layers in the PCB build-up. From bottom to top there are 3 layers (21), (22) and (23), the first of which is the microstrip line (21).
  • the substrate layer on which the microstrip line is patterned is a nelco4000 substrate with a thickness of 75 ⁇ m (26).
  • this microstrip line should have a width of 150um in order to yield a 50-ohm characteristic impedance.
  • the microstrip line is placed perpendicular to the width of the waveguide. So its position can be shifted along the width of the waveguide. This shifting parameter along with the length of the microstrip line that goes in the waveguide are two of the design parameters in the PCB part of the transition element.
  • the upper 2 conductive layers (22) and (23) in the PCB build-up (for example thickness (25) of 504 ⁇ m in the example illustrated) contain openings, also called irises, for example rectangular or circular openings, transverse to the direction of wave propagation.
  • the functionality of these openings in the two upper layers is to load the electromagnetic wave with capacitive and inductive impedances so as to obtain impedance matching between the waveguide and the microstrip line.
  • the number of irises determines the available bandwidth: the more irises are present, the higher the functional bandwidth that can be obtained, if the irises are designed properly.
  • the irises can be designed based on formulae known for irises for impedance matching of coupled waveguides, as for example described in the handbook " Foundations for Microwave Engineering", Robert E. Collin (2001, John Wiley and Sons, Second Editi on). From these formulae, suitable dimensions of the irises can be calculated.
  • a combination of capacitive and inductive irises can be considered an LC tank, as illustrated in FIG. 10.
  • FIG. 10(a) schematically illustrates a transition element (7) and a microstrip line (6) integrated in a multilayer system, as well as a waveguide (5) and end cavity (4) with back short (100).
  • the end cavity (4) and the back short (100) may be integrated into the multilayer system, as for example illustrated in FIG. 11a and FIG. 11b .
  • FIG. 11a illustrates an embodiment where the end cavity (4) is fabricated in PCB technology.
  • FIG. 11b illustrates an embodiment where the end cavity (4) is fabricated in LTCC or MCM technology.
  • the microstrip port (110) and the waveguide port (111) are illustrated in FIG. 11a and FIG. 11(b) .
  • the end cavity (4) and the back short (100) may be external to the multilayer system.
  • One of the layers of the multilayer system acts as ground layer for the microstrip line, i.e. the metal layer closest to the microstrip line.
  • this is the metal layer indicated with an encircled reference number 2.
  • FIG. 10(b) illustrates the circuit model corresponding to the device schematically illustrated in FIG. 10(a) , for use with the formulae known for irises for impedance matching of coupled waveguides as described in the book by Collin above.
  • the open rectangles in the circuit model represent transmission lines for the waveguide parts, while the filled rectangles illustrate transmission lines for the microstrip parts.
  • the microstrip input port (110) and the waveguide port (111) are illustrated.
  • the transmission lines for the waveguide parts take into account the distance between the conductive layers of the multilayer structure.
  • the top iris is represented by the LC tank L10C10, and the bottom iris is represented by the LC tank L11C11.
  • the microstrip probe (6) is represented in the circuit model by the inductance L3. It is clear from the circuit model of FIG. 10(b) that supplementary degrees of freedom for matching are added and/or a broader bandwidth can be obtained for the system by adding extra layers in the multilayer system (more d i 's and more LC tanks).
  • the last objects used on the multilayer, e.g. PCB, part of the transition element are some metalized thru vias (8), illustrated in FIG. 2 and FIG. 4 .
  • These vias (8) which connect the top and the bottom conductive layers of the multilayer structure to each other act as a continuum for the waveguide walls in the dielectric material of the multilayer structure.
  • the functionality of these vias is to prevent the electromagnetic wave from penetrating to the dielectric substrate surrounding the irises in different conductive layers of the multilayer structure.
  • the centers of the thru vias determine a shape, such as for example but not necessarily limited thereto, a shape similar to or corresponding to the waveguide shape, e.g. a rectangle or a circle or an oval.
  • this shape may have the same dimensions as the waveguide.
  • dimensions slightly larger or slighter smaller than the waveguide dimensions are also possible. With slightly larger or slightly smaller is meant not more than a quarter wavelength difference. Dimensions which are slightly smaller or slightly larger are advantageous in terms of matching (an extra design parameter is available in the circuit model).
  • the diameter and centre-to-centre spacing of these thru vias in the embodiment described are 150 ⁇ m and 350 ⁇ m respectively. As these vias are thru vias, to prevent them from short circuiting the microstrip line, there is an opening in the vias' chain just above the microstrip line.
  • Fig. 4 shows a schematic for the multilayer build-up along with the design parameters for different layers.
  • a top view of the multilayer structure is shown containing three layers (21), (22) and (23).
  • the last part of the transition structure which is named Top-Cap (4) in Fig. 3 is a metal box, having a cavity (24) at one of its faces.
  • the depth of the cavity is a design parameter usable for defining working frequency and/or bandwidth. This cavity (24) that is depicted in Fig.
  • 3 has 3 dimensions of length L4 (in transversal direction of the microstrip line), width w4 (in longitudinal direction of the microstrip line) and depth d4 (e.g. about 250 ⁇ m). These 3 dimensions along with the value of the displacement of the centre of the cavity with respect to the centre of the waveguide in the direction of the microstrip line, s4, become 4 other design parameters for the transition element.
  • the number of design parameters is increased and consequently design capabilities are expanded.
  • the material used for the transition element has better mechanical stability. As a result, the manufacturing procedure including the thru-hole metallization becomes more convenient and less expensive.
  • the assembling of the different parts of the transition such as sandwiching of the multilayer structure, e.g. PCB, between the bulky conductive, e.g. metal, parts of the waveguide takes less effort.
  • using the multilayer structure, e.g. PCB, comprising irises can increase the working bandwidth of the probe-fed waveguide-to-microstrip transition device.
  • a first value for each of the design parameters was chosen. These first values where values which for a person skilled in the art were considered to be realistic values.
  • the thickness of the PCB was predetermined.
  • a waveguide with particular dimensions was selected. For a start, the same dimensions were selected for the irises, and, also for a start, the irises were aligned with the waveguide. Also the dimensions of the upper cavity were selected similar to the dimensions of the waveguide. A bottom margin of some of the above parameter values is restricted by the technology used.
  • the accepted return loss for the aforementioned application 60 GHz receiver
  • Fig. 5 shows the insertion loss and return loss for optimized transition for the frequency band from 40GHz to 80GHz. These two frequencies are the cut-off frequencies of the 1st and the 2nd modes in the WR-15 waveguide. In Fig. 5 it can be seen that the insertion loss is less than 1dB for the frequency band 45GHz to 69GHz. If the relative bandwidth is defined as the ratio of the absolute bandwidth to the centre frequency, the designed transition has a relative less-than-1dB-insertion-loss bandwidth of 42%. On the other hand, should 10dB be assumed as the accepted return loss, the optimized transition has a relative more-than-10dB return- loss bandwidth of 46%.
  • the transition element was designed to be used at millimeter wave frequencies and the resulting dimensions were very tiny, it makes sense to study the effect of probable imperfections of the manufacturing and assembling procedure on the measurement results.
  • the first parameter under investigation was the misalignment of the Top-Cap with respect to the multilayer structure, e.g. PCB, and waveguide parts.
  • Fig.6 shows the simulation results for the insertion loss and return loss sensitivities to this misalignment.
  • the worst case occurs when the miss-alignment takes place in the -x direction with an amount of 100 ⁇ m. So it can be deduced that the transition element will be not highly sensitive to the miss-alignment of the Top-Cap with respect to the two other parts after being manufactured. This is based on the fact that the mechanical alignment of the 3 different parts has an accuracy better than 100 ⁇ m.
  • the next sensitivity analysis was done on the misalignment of the waveguide with respect to the Top-Cap and the parts of the multilayer structure, e.g. PCB parts.
  • the simulation results are shown in Fig.7 where the waveguide is shifted by two 50 ⁇ m steps in ⁇ x and ⁇ y directions.
  • the return loss level of the transition will degrade when PCB shift is 100 ⁇ m in x or y directions. This degradation is in the return loss level as well as its bandwidth, depending on the case.
  • Fig.9 shows different parts of the transition element to be manufactured and assembled.
  • the flange part (41) comprises the waveguide and a standard flange to connect it appropriately to the external waveguide ports.
  • the PCB (42) is sandwiched between flange part (41) and the other two upper parts of Ring (43) and Cap (44). The latter two parts will be manufactured in one sample as the Top-Cap.

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EP09179861A 2009-06-11 2009-12-18 Système intégré comprenant un guide d'ondes sur un appareil de couplage de microruban Withdrawn EP2267832A1 (fr)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014153393A3 (fr) * 2013-03-19 2015-04-02 Texas Instruments Incorporated Guide d'ondes diélectrique et procédé de fabrication
CN104796205A (zh) * 2014-01-22 2015-07-22 深圳富泰宏精密工业有限公司 天线自检装置
US9270005B2 (en) 2011-02-21 2016-02-23 Siklu Communication ltd. Laminate structures having a hole surrounding a probe for propagating millimeter waves
US9379760B2 (en) 2011-07-29 2016-06-28 Bae Systems Plc Radio frequency communication
US9496593B2 (en) 2011-02-21 2016-11-15 Siklu Communication ltd. Enhancing operation of laminate waveguide structures using an electrically conductive fence
WO2019199212A1 (fr) * 2018-04-13 2019-10-17 Saab Ab Lancement de guide d'ondes
CN111613862A (zh) * 2019-02-22 2020-09-01 德克萨斯仪器股份有限公司 用于封装件与电介质波导之间的有效耦合的基板设计
WO2023185843A1 (fr) * 2022-03-31 2023-10-05 华为技术有限公司 Ensemble antenne à guide d'ondes, radar, terminal et procédé de préparation d'un ensemble antenne à guide d'ondes

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EP1304762A2 (fr) * 2001-10-11 2003-04-23 Fujitsu Compound Semiconductor, Inc. Structure de transition entre une ligne de transmission et un guide d' ondes
EP1367668A1 (fr) * 2002-05-30 2003-12-03 Siemens Information and Communication Networks S.p.A. Système de transition entre microruban et guide d'ondes à large bande sur une carte de circuits imprimés multicouche
EP1720213A1 (fr) * 2004-02-27 2006-11-08 Mitsubishi Electric Corporation Circuit transducteur
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EP1367668A1 (fr) * 2002-05-30 2003-12-03 Siemens Information and Communication Networks S.p.A. Système de transition entre microruban et guide d'ondes à large bande sur une carte de circuits imprimés multicouche
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9270005B2 (en) 2011-02-21 2016-02-23 Siklu Communication ltd. Laminate structures having a hole surrounding a probe for propagating millimeter waves
US9496593B2 (en) 2011-02-21 2016-11-15 Siklu Communication ltd. Enhancing operation of laminate waveguide structures using an electrically conductive fence
US9379760B2 (en) 2011-07-29 2016-06-28 Bae Systems Plc Radio frequency communication
WO2014153393A3 (fr) * 2013-03-19 2015-04-02 Texas Instruments Incorporated Guide d'ondes diélectrique et procédé de fabrication
US9312591B2 (en) 2013-03-19 2016-04-12 Texas Instruments Incorporated Dielectric waveguide with corner shielding
CN104796205A (zh) * 2014-01-22 2015-07-22 深圳富泰宏精密工业有限公司 天线自检装置
WO2019199212A1 (fr) * 2018-04-13 2019-10-17 Saab Ab Lancement de guide d'ondes
CN111613862A (zh) * 2019-02-22 2020-09-01 德克萨斯仪器股份有限公司 用于封装件与电介质波导之间的有效耦合的基板设计
WO2023185843A1 (fr) * 2022-03-31 2023-10-05 华为技术有限公司 Ensemble antenne à guide d'ondes, radar, terminal et procédé de préparation d'un ensemble antenne à guide d'ondes

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