EP2232528A4 - Methods for formation of substrate elements - Google Patents
Methods for formation of substrate elementsInfo
- Publication number
- EP2232528A4 EP2232528A4 EP08872816.7A EP08872816A EP2232528A4 EP 2232528 A4 EP2232528 A4 EP 2232528A4 EP 08872816 A EP08872816 A EP 08872816A EP 2232528 A4 EP2232528 A4 EP 2232528A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- formation
- methods
- substrate elements
- substrate
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US602807P | 2007-12-14 | 2007-12-14 | |
US6436308P | 2008-02-29 | 2008-02-29 | |
US6495408P | 2008-04-04 | 2008-04-04 | |
PCT/US2008/013499 WO2009108173A2 (en) | 2007-12-14 | 2008-12-09 | Methods for formation of substrate elements |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2232528A2 EP2232528A2 (en) | 2010-09-29 |
EP2232528A4 true EP2232528A4 (en) | 2015-06-17 |
Family
ID=41016634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08872816.7A Withdrawn EP2232528A4 (en) | 2007-12-14 | 2008-12-09 | Methods for formation of substrate elements |
Country Status (7)
Country | Link |
---|---|
US (1) | US8999851B2 (en) |
EP (1) | EP2232528A4 (en) |
JP (1) | JP5496105B2 (en) |
KR (1) | KR20110074724A (en) |
CN (1) | CN101999162A (en) |
TW (1) | TWI501316B (en) |
WO (1) | WO2009108173A2 (en) |
Families Citing this family (20)
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US8958917B2 (en) | 1998-12-17 | 2015-02-17 | Hach Company | Method and system for remote monitoring of fluid quality and treatment |
US7454295B2 (en) | 1998-12-17 | 2008-11-18 | The Watereye Corporation | Anti-terrorism water quality monitoring system |
US9056783B2 (en) | 1998-12-17 | 2015-06-16 | Hach Company | System for monitoring discharges into a waste water collection system |
US8920619B2 (en) | 2003-03-19 | 2014-12-30 | Hach Company | Carbon nanotube sensor |
US8269209B2 (en) | 2009-12-18 | 2012-09-18 | Intel Corporation | Isolation for nanowire devices |
US7935612B1 (en) * | 2010-02-05 | 2011-05-03 | International Business Machines Corporation | Layer transfer using boron-doped SiGe layer |
US8409690B2 (en) | 2010-05-07 | 2013-04-02 | Intel Corporation | Patterned nanowires |
CN102129981B (en) * | 2010-12-30 | 2013-06-05 | 北京大学深圳研究生院 | Manufacturing methods of nanowire and nanowire transistor |
CN102315170B (en) * | 2011-05-26 | 2013-07-31 | 北京大学 | Method for manufacturing silicon nanowire FET (field effect transistor) based on wet etching |
CN103424441B (en) * | 2012-05-22 | 2017-04-12 | 香港理工大学 | Palladium-based hydrogen sensor with adjustable connectivity prepared on substrate with controllable flexibility and production method |
CN103632923B (en) * | 2012-08-23 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | The method forming all-around-gate pole device nano wire |
DE102013202806A1 (en) | 2013-01-31 | 2014-07-31 | Rohde & Schwarz Gmbh & Co. Kg | Thin-carrier circuit for use in waveguides and manufacturing processes |
CN104465375B (en) * | 2013-09-17 | 2017-09-29 | 中芯国际集成电路制造(上海)有限公司 | The forming method of p-type fin formula field effect transistor |
EP3050112B1 (en) * | 2013-09-27 | 2021-12-15 | Google LLC | Composite high-k metal gate stack for enhancement mode gan semiconductor devices |
US9627330B2 (en) | 2015-07-13 | 2017-04-18 | International Business Machines Corporation | Support for long channel length nanowire transistors |
CN105390475A (en) * | 2015-10-20 | 2016-03-09 | 北京大学 | Capacitor integration structure inside substrate, and manufacturing method thereof |
US9947743B2 (en) | 2016-06-16 | 2018-04-17 | International Business Machines Corporation | Structures and methods for long-channel devices in nanosheet technology |
US11421128B2 (en) | 2016-12-21 | 2022-08-23 | Merck Patent Gmbh | Composition of spin-on materials containing metal oxide nanoparticles and an organic polymer |
KR20220077508A (en) | 2020-12-02 | 2022-06-09 | 삼성전자주식회사 | Semiconductor device and method for manufacturing the same |
CN118112056B (en) * | 2024-04-29 | 2024-07-09 | 清华大学 | Sensor, and preparation method and application thereof |
Citations (8)
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US6420266B1 (en) * | 1999-11-02 | 2002-07-16 | Alien Technology Corporation | Methods for creating elements of predetermined shape and apparatuses using these elements |
US20040166642A1 (en) * | 2003-02-20 | 2004-08-26 | Hao-Yu Chen | Semiconductor nano-rod devices |
US20060091481A1 (en) * | 2004-10-28 | 2006-05-04 | Ming Li | Multi bridge channel field effect transistors with nano-wire channels and methods of manufacturing the same |
WO2006070670A1 (en) * | 2004-12-28 | 2006-07-06 | Matsushita Electric Industrial Co., Ltd. | Semiconductor nano-wire, and semiconductor device provided with that nano-wire |
US20060284181A1 (en) * | 2005-06-21 | 2006-12-21 | Lg.Philips Lcd Co., Ltd. | Fabricating method for thin film transistor substrate and thin film transistor substrate using the same |
US20070105321A1 (en) * | 2005-09-22 | 2007-05-10 | Korea Electronics Technology Institute | Method of manufacturing a nanowire device |
EP1796162A2 (en) * | 2005-12-06 | 2007-06-13 | Canon Kabushiki Kaisha | Circuit element having capacitor and field effect transistor comprising nanowires |
US20070145431A1 (en) * | 2005-12-24 | 2007-06-28 | Samsung Electronics Co., Ltd. | Fin-FET having GAA structure and methods of fabricating the same |
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JP2008502151A (en) * | 2004-06-04 | 2008-01-24 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | Method and device for manufacturing and assembling printable semiconductor elements |
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-
2008
- 2008-12-09 CN CN2008801201886A patent/CN101999162A/en active Pending
- 2008-12-09 EP EP08872816.7A patent/EP2232528A4/en not_active Withdrawn
- 2008-12-09 KR KR20107015621A patent/KR20110074724A/en not_active Application Discontinuation
- 2008-12-09 JP JP2010537943A patent/JP5496105B2/en active Active
- 2008-12-09 US US12/331,150 patent/US8999851B2/en active Active
- 2008-12-09 WO PCT/US2008/013499 patent/WO2009108173A2/en active Application Filing
- 2008-12-11 TW TW097148251A patent/TWI501316B/en not_active IP Right Cessation
Patent Citations (9)
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US6420266B1 (en) * | 1999-11-02 | 2002-07-16 | Alien Technology Corporation | Methods for creating elements of predetermined shape and apparatuses using these elements |
US20040166642A1 (en) * | 2003-02-20 | 2004-08-26 | Hao-Yu Chen | Semiconductor nano-rod devices |
US20060091481A1 (en) * | 2004-10-28 | 2006-05-04 | Ming Li | Multi bridge channel field effect transistors with nano-wire channels and methods of manufacturing the same |
WO2006070670A1 (en) * | 2004-12-28 | 2006-07-06 | Matsushita Electric Industrial Co., Ltd. | Semiconductor nano-wire, and semiconductor device provided with that nano-wire |
US20080224122A1 (en) * | 2004-12-28 | 2008-09-18 | Tohru Saitoh | Semiconductor Nanowire and Semiconductor Device Including the Nanowire |
US20060284181A1 (en) * | 2005-06-21 | 2006-12-21 | Lg.Philips Lcd Co., Ltd. | Fabricating method for thin film transistor substrate and thin film transistor substrate using the same |
US20070105321A1 (en) * | 2005-09-22 | 2007-05-10 | Korea Electronics Technology Institute | Method of manufacturing a nanowire device |
EP1796162A2 (en) * | 2005-12-06 | 2007-06-13 | Canon Kabushiki Kaisha | Circuit element having capacitor and field effect transistor comprising nanowires |
US20070145431A1 (en) * | 2005-12-24 | 2007-06-28 | Samsung Electronics Co., Ltd. | Fin-FET having GAA structure and methods of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
TW200949942A (en) | 2009-12-01 |
JP2011507267A (en) | 2011-03-03 |
TWI501316B (en) | 2015-09-21 |
WO2009108173A2 (en) | 2009-09-03 |
US8999851B2 (en) | 2015-04-07 |
WO2009108173A3 (en) | 2009-12-30 |
JP5496105B2 (en) | 2014-05-21 |
US20090230380A1 (en) | 2009-09-17 |
EP2232528A2 (en) | 2010-09-29 |
CN101999162A (en) | 2011-03-30 |
KR20110074724A (en) | 2011-07-01 |
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