EP2211393B1 - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- EP2211393B1 EP2211393B1 EP09014533.5A EP09014533A EP2211393B1 EP 2211393 B1 EP2211393 B1 EP 2211393B1 EP 09014533 A EP09014533 A EP 09014533A EP 2211393 B1 EP2211393 B1 EP 2211393B1
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- layer
- light emitting
- emitting device
- conductive semiconductor
- semiconductor layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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Description
- The disclosure relates to a light emitting device for converting a current into light.
- A light emitting diode (LED) is a semiconductor light emitting device used to convert a current into light.
- The wavelength of light emitted from the LED depends on a semiconductor material used to manufacture the LED. This is because the wavelength of the emitted light depends on a band-gap of the semiconductor material representing an energy difference between electrons of a valence band and electrons of a conduction band.
- Recently, the brightness of the conventional LED has increased, so that the conventional LED has been employed as a light source for a display device, a vehicle, or an illumination device. In addition, the conventional LED can represent a white color having superior light efficiency by employing phosphors or combining LEDs having various colors.
- Meanwhile, the brightness of the conventional LED is changed according to various conditions such as an active-layer structure, a light extraction structure for extracting light to the outside, a chip size, and the type of molding materials surrounding the LED.
- Document
US 2008/0169479 A1 teaches a light emitting device comprising: a first photonic crystal structure comprising a reflective layer and a plurality of pattern elements on the reflective layer; a second conductive semiconductor layer on both the reflective layer and the pattern elements; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer; and a second photonic crystal structure on the first conductive semiconductor layer, wherein the second photonic crystal structure comprises: a transparent electrode layer on the first conductive semiconductor layer; and a patterned structure in a top surface of the transparent electrode layer, the light emitting device further comprising: a second electrode layer under the reflective layer; and a first electrode layer on the first conductive semiconductor layer. - Document
US 2007/0194324 A1 teaches a light emitting device, comprising: a first photonic crystal structure comprising a reflective layer and a plurality of non-metal pattern elements on the reflective layer; a second conductive semiconductor layer on both the reflective layer and the non-metal pattern elements; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer; and a second photonic crystal structure on the first conductive semiconductor layer, wherein the second photonic crystal structure comprises: the first conductive semiconductor layer and a patterned structure in a top surface of the first semiconductor layer, the light emitting device further comprising: a second electrode layer under the reflective layer; and a first electrode layer on the first conductive semiconductor layer. - An embodiment of the invention provides a light emitting device employing an improved structure.
- The embodiment provides a light emitting device having improved light extraction efficiency.
- The invention concerns a light emitting device according to claim 1. Further embodiments are disclosed in the dependent claims.
- FIG. 1
- is a view showing a light emitting device according to a first exemplary device;
- FIG. 2
- is a view showing a light emitting device according to a second exemplary device;
- FIG. 3
- is a view showing a light emitting device according to a third exemplary device;
- FIG. 4
- is a view showing a light emitting device according to a fourth exemplary device;
- FIG. 5
- is a view showing a light emitting device according to a first embodiment;
- FIG. 6
- is a view showing a simulation structure used to determine the effect of a first photonic crystal structure in a light emitting device according to the embodiments;
- FIG. 7
- is a graph showing light extraction efficiency as a function of a propagation distance when the first photonic crystal structure is formed in a light emitting device or not;
- FIG. 8
- is a graph representing light extraction efficiency according to a lattice constant of the
non-metal pattern elements 80 in the first photonic crystal structure of the light emitting device according to the embodiments; - FIG. 9
- is a graph representing light extraction efficiency according to the thickness of the
non-metal pattern elements 80 in the first photonic crystal structure of the light emitting device according to the embodiments; - FIG. 10
- is a graph showing light extraction efficiency when the first photonic crystal structure, the second photonic crystal structure, and both of the first and second photonic crystal structures are formed in a light emitting device;
- FIG. 11
- is a graph showing light extraction efficiency according to the lattice constant of the non-metal pattern elements of the first photonic crystal structure and a lattice constant of columns or holes of the second photonic crystal structure in the light emitting device according to the embodiment; and
- FIGS. 12 and 13
- are plan views showing the first photonic crystal structure.
- In the description of an embodiment, it will be understood that, when a layer (or film), a region, a pattern, or a structure is referred to as being "on" or "under" another substrate, another layer (or film), another region, another pad, or another pattern, it can be "directly" or "indirectly" on the other substrate, layer (or film), region, pad, or pattern, or one or more intervening layers may also be present. Further, "on" or "under" of each layer is determined based on the drawing.
- The thickness and size of each layer shown in the drawings can be exaggerated, omitted or schematically drawn for the purpose of convenience or clarity. In addition, the size of elements does not utterly reflect an actual size.
- Hereinafter, a light emitting device according to embodiments will be described in detail with respect to accompanying drawings.
-
FIG. 1 is a view showing a light emitting device according to a first exemplary device. - Referring to
FIG. 1 , the light emitting device according to the first exemplary device includes asecond electrode layer 10, areflective layer 20 formed on thesecond electrode layer 10, anon-metal pattern layer 80 formed on thereflective layer 20, a secondconductive semiconductor layer 30 formed on both thenon-metal pattern layer 80 and thereflective layer 20, anactive layer 40 formed on the secondconductive semiconductor layer 30, a firstconductive semiconductor layer 50 formed on theactive layer 40, and afirst electrode layer 70 formed on the firstconductive semiconductor layer 50. - A
non-conductive semiconductor layer 60 may be selectively formed on the firstconductive semiconductor layer 50. - In more detail, the
second electrode layer 10 may include at least one of copper (Cu), titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), and a semiconductor substrate doped with impurities. Thesecond electrode layer 10 supplies power to theactive layer 40 in cooperation with thefirst electrode layer 70. - The
reflective layer 20 may include at least one of silver (Ag), alloy including Ag, Al, and alloy including Al which have a high reflective index. - Although not shown in
FIG. 1 , an adhesion metal layer including nickel (Ni) or titanium (Ti) may be formed between thesecond electrode layer 10 and thereflective layer 20 such that an interfacial adhesion strength can be enhanced between thesecond electrode layer 10 and thereflective layer 20. - The
non-metal pattern layer 80 that is formed on thereflective layer 20 faces the secondconductive semiconductor layer 30. At least a portion of a side surface of thenon-metal pattern layer 80 may be surrounded by thereflective layer 20. - The
non-metal pattern layer 80 and thereflective layer 20 form a firstphotonic crystal structure 90. - The
non-metal pattern layer 80 includes a non-metal material, and has a refractive index greater than that of air and smaller than that of the secondconductive semiconductor layer 30. - The
non-metal pattern layer 80 may be formed by patterning a non-metal layer after forming the non-metal layer on the secondconductive semiconductor layer 30 in the manufacturing process of the light emitting device. Thereafter, thereflective layer 20 may be formed on the resultant structure. As shown inFIG. 1 , the light emitting device is formed with thesecond electrode layer 10, thereflective layer 20 is provided on a side surface or a lower surface of thenon-metal pattern layer 80. In addition, thesecond electrode layer 10 is provided on a lower surface of thereflective layer 20. - The
non-metal pattern layer 80 may include a transparent electrode, for example, at least one of tin-doped indium oxide (ITO), zinc oxide (ZnO), gallium-doped zinc oxide (GZO), ruthenium oxide (RuOx), and iron oxide (IrOx). - The
non-metal pattern layer 80 may include a dielectric substance. For example, thenon-metal pattern layer 80 may include at least one of silicon oxide (SiO2), magnesium fluoride (MgF2), titanium dioxide (TiO2), aluminum oxide (Al2O3), spin on glass (SOG), and silicon nitride (Si3N4). When thenon-metal pattern layer 80 includes a dielectric substance, since a current does not flow through thenon-metal pattern layer 80, thenon-metal pattern layer 80 has pattern elements spaced apart from each other by a predetermined interval as shown in the sectional view ofFIG. 1 . In this case, the secondconductive semiconductor layer 30 partially faces thereflective layer 20. - The
reflective layer 20 may have pattern elements spaced apart from each other by a predetermined interval on the same horizontal plane as that of thenon-metal pattern layer 80. - Although not shown, an ohmic-contact layer can be formed between the
reflective layer 20 and the secondconductive semiconductor layer 30. -
FIGS. 12 and 13 are plan views showing the firstphotonic crystal structure 90. - As shown in
FIG. 12 , thenon-metal pattern layer 80 may have pattern elements spaced apart from each other on thereflective layer 20. As shown inFIG. 13 , thereflective layer 20 may have pattern elements spaced apart from each other on thenon-metal pattern layer 80. - The
reflective layer 20 and thenon-metal pattern layer 80 that form the firstphotonic crystal structure 90 allow light to be effectively transmitted from the light emitting device. - The light extraction efficiency of the first
photonic crystal structure 90 can be determined according to a refractive index contrast. When thenon-metal pattern layer 80 is formed of using a transparent electrode or a dielectric substance, and thereflective layer 20 is formed of a metal mirror below or beside thenon-metal pattern layer 80, a greater diffraction effect is generated as compared with the diffraction effect caused by the refractive index contrast. - Meanwhile, the second
conductive semiconductor layer 30 may be formed as a GaN-based semiconductor layer doped with P-type impurities, and the firstconductive semiconductor layer 50 may be formed as a GaN-based semiconductor layer doped with N-type impurities. Theactive layer 40 may have at least one of a single quantum well structure, a multi-quantum well structure, a quantum-wire structure, and a quantum dot structure. - The
non-conductive semiconductor layer 60 may be selectively formed, and has electrical conductivity significantly lower than those of the firstconductive semiconductor layer 50 and the secondconductive semiconductor layer 30. For example, thenon-conductive semiconductor layer 60 may be an un-doped GaN layer. - As described above, according to the light emitting device of the first embodiment, the
first electrode layer 70 is aligned perpendicularly to thesecond electrode layer 10 and thenon-metal pattern layer 80, including a transparent electrode or a dielectric substance, is formed between the secondconductive semiconductor layer 30 and thereflective layer 20, so that the first photonic crystal structure 90 (including thereflective layer 20 that is in contact with the lower surface and side surfaces of the non-metal pattern layer 80) can be obtained. - The first
photonic crystal structure 90 includes thenon-metal pattern layer 80 formed of a transparent electrode or a dielectric substance and thereflective layer 20 includes metal having a refractive index represented in a complex number, such that a strong diffraction effect can be represented. Accordingly, the light extraction effect can be improved. -
FIG. 2 is a view showing a light emitting device according to a second exemplary device. In the following description, details identical to those of the first exemplary device will be omitted in order to avoid redundancy. - Referring to
FIG. 2 , the light emitting device according to the second exemplary device includes thesecond electrode layer 10, thereflective layer 20 formed on thesecond electrode layer 10, atransparent electrode layer 81 having aprotrusion pattern layer 82 on thereflective layer 20, the secondconductive semiconductor layer 30 formed on thetransparent electrode layer 81, theactive layer 40 formed on the secondconductive semiconductor layer 30, the firstconductive semiconductor layer 50 formed on theactive layer 40, and thefirst electrode layer 70 formed on the firstconductive semiconductor layer 50. - The
non-conductive semiconductor layer 60 may be selectively formed on the firstconductive semiconductor layer 50. - In the light emitting device according to the second exemplary device, the
protrusion pattern layer 82 of thetransparent electrode layer 81 and thereflective layer 20 form the firstphotonic crystal structure 90. - The
protrusion pattern layer 82 protrudes towards thereflective layer 20. Theprotrusion pattern layer 82 may have pattern elements spaced apart from each other by a predetermined interval. In other words, lower surfaces and side surfaces of the pattern elements of theprotrusion pattern layer 82 are surrounded by thereflective layer 20. - The
protrusion pattern layer 82 may be formed by selectively etching or depositing thetransparent electrode layer 81 after forming thetransparent electrode layer 81 on the secondconductive semiconductor layer 30. - The
transparent electrode layer 81 may include at least one of ITO, ZnO, GZO, RuOx, and IrOx. - It is not necessary that the pattern elements of the
protrusion pattern layer 82 are spaced apart from each other by a predetermined interval. For instance, thetransparent electrode layer 81 may have a roughness on a surface facing thereflective layer 20. - The first
photonic crystal structure 90 includes theprotrusion pattern layer 82 of thetransparent electrode layer 81 and thereflective layer 20, which is formed as a metal mirror, in the contact with theprotrusion pattern layer 82 so that a desirable diffraction effect can be represented. - Accordingly, the light extraction efficiency of the light emitting device can be improved.
-
FIG. 3 is a view showing a light emitting device according to a third exemplary device. In the following description, details identical to that of the first exemplary device will be omitted in order to avoid redundancy. - Referring to
FIG. 3 , the light emitting device according to the third exemplary device includes thesecond electrode layer 10, thereflective layer 20 formed on thesecond electrode layer 10, the secondconductive semiconductor layer 30 includingprotrusion pattern layer 31 on thereflective layer 20, theactive layer 40 formed on the secondconductive semiconductor layer 30, the firstconductive semiconductor layer 50 formed on theactive layer 40, and thefirst electrode layer 70 formed on the firstconductive semiconductor layer 50. - The
non-conductive semiconductor layer 60 may be selectively formed on the firstconductive semiconductor layer 50. - In the light emitting device according to the third exemplary device, the
protrusion pattern layer 31 of the secondconductive semiconductor layer 30 and thereflective layer 20 form the firstphotonic crystal structure 90. - The
protrusion pattern layer 31 protrudes toward thereflective layer 20, and may have pattern elements spaced apart from each other by a predetermined interval. Lower surfaces and side surfaces of pattern elements of theprotrusion pattern layer 31 are surrounded by thereflective layer 20. - The
protrusion pattern layer 31 may be formed by selectively etching the secondconductive semiconductor layer 30 after forming the secondconductive semiconductor layer 30 or by forming roughness on the surface of the secondconductive semiconductor layer 30 through the adjustment of a growth condition of the secondconductive semiconductor layer 30. Since theprotrusion pattern layer 31 may include a GaN-based semiconductor layer, theprotrusion pattern layer 31 may be one kind of a non-metal pattern layer. - In this case, it is not necessary that the pattern elements of the
protrusion pattern layer 31 are spaced apart from each other by a predetermined interval. For instance, the secondconductive semiconductor layer 30 may have a roughness at a surface facing thereflective layer 20. - The first
photonic crystal structure 90 includes theprotrusion pattern layer 31 of the secondconductive semiconductor layer 30, which is formed by using the GaN-based semiconductor layer, and thereflective layer 20, which is formed as a metal mirror, in contact with theprotrusion pattern layer 31, so that a desirable diffraction effect can be represented. - Accordingly, the light extraction efficiency of the light emitting device can be improved.
-
FIG. 4 is a view showing a light emitting device according to a fourth exemplary device. In the following description, details identical to that of the first exemplary device will be omitted in order to avoid redundancy. - Referring to
FIG. 4 , the light emitting device according to the fourth exemplary device includes thesecond electrode layer 10, areflective layer 22 formed on thesecond electrode layer 10, thetransparent electrode layer 81 formed on thereflective layer 22, areflective pattern layer 23 formed on thetransparent electrode layer 81, the secondconductive semiconductor layer 30 formed on both thetransparent electrode layer 81 and thereflective pattern layer 23, theactive layer 40 formed on the secondconductive semiconductor layer 30, the firstconductive semiconductor layer 50 formed on theactive layer 40, and thefirst electrode layer 70 formed on the firstconductive semiconductor layer 50. - In addition, the
non-conductive semiconductor layer 60 may be selectively formed on the firstconductive semiconductor layer 50. - In the light emitting device according to the fourth exemplary device, the
transparent electrode layer 81 and thereflective pattern layer 23 form the firstphotonic crystal structure 90. - The
reflective pattern layer 23 may have pattern elements spaced apart from each other by a predetermined interval. In other words, lower surfaces and side surfaces of the pattern elements of thereflective pattern layer 23 are surrounded by thetransparent electrode layer 81. - The
reflective pattern layer 23 may be formed by selectively etching or depositing a reflective material layer after forming the reflective material layer on the secondconductive semiconductor layer 30. - The
transparent electrode layer 81 may include at least one of ITO, ZnO, GZO, RuOx, and IrOx. - The first
photonic crystal structure 90 includes thetransparent electrode layer 81 and thereflective pattern layer 23, so that a desirable diffraction effect can be represented. - The
reflective layer 22 is provided under thetransparent electrode layer 81 such that light generated from theactive layer 40 can be reflected upward. If thesecond electrode layer 10 includes a material having high reflectivity, thereflective layer 22 can be omitted. - Accordingly, the light extraction efficiency of the light emitting device can be improved.
-
FIG. 5 is a view showing a light emitting device according to a first embodiment. In the following description, details identical to that of the first exemplary device will be omitted in order to avoid redundancy. - Referring to
FIG. 5 , the light emitting device according to the first embodiment includes thesecond electrode layer 10, thereflective layer 20 formed on thesecond electrode layer 10, thenon-metal pattern layer 80 formed on thereflective layer 20, the secondconductive semiconductor layer 30 formed on both thenon-metal pattern layer 80 and thereflective layer 20, theactive layer 40 formed on the secondconductive semiconductor layer 30, the firstconductive semiconductor layer 50 formed on theactive layer 40, thefirst electrode layer 70 formed on the firstconductive semiconductor layer 50, and thenon-conductive semiconductor layer 60 formed on the firstconductive semiconductor layer 50. - A second
photonic crystal structure 100 having a column shape or a hole shape is formed from thenon-conductive semiconductor layer 60. According to the embodiment, the secondphotonic crystal structure 100 includes a patternedstructure 61. The patterned structure may include holes or columns. - The columns or holes 61 may be aligned with a predetermined interval or randomly. This improves the light extraction efficiency of the light emitting device.
- Although the second
photonic crystal structure 100 is formed on thenon-conductive semiconductor layer 60 according to the embodiment, the secondphotonic crystal structure 100 is identically applicable to the second to fourth exemplary devices. - The second
photonic crystal structure 100 may be formed on the firstconductive semiconductor layer 50 without thenon-conductive semiconductor layer 60. This is identically applicable to the second to third exemplary devices. -
FIG. 6 is a view showing a simulation structure used to determine the effect of the firstphotonic crystal structure 90 in a light emitting device according to the embodiments.FIG. 7 is a graph showing extraction efficiency as a function of a propagation distance when the firstphotonic crystal structure 90 is formed in a light emitting device or not. - Referring to
FIG. 6 , a finite different time domain (FDTD) method is utilized to determine the light extraction effect of a first photonic crystal structure. It is assumed that ametal mirror 21 corresponding to the reflective layer includes Ag. A Drude model is employed to precisely depict Ag in a calculation space. ITO is used as a transparent metal for thetransparent electrode layer 81. The thickness h of thetransparent electrode layer 81 is assumed as 0.1 µm, and a lattice constant of thetransparent electrode layer 81 is about 1 µm. - It is assumed that the
transparent electrode layer 81 has a refractive index of about 2.0, a light emitting layer on thetransparent electrode layer 81 is aGaN layer 121 having a refractive index of about 2.46, and anepoxy layer 110 having a refractive index of about 1.4 is provided on theGaN layer 121. In addition, it is assumed that theGaN layer 121 has a thickness of about 3 µm. A multi quantum well 41 is provided in theGaN layer 121. - Referring to
FIG. 7 , when comparing a light emitting device employing the first photonic crystal structure with a light emitting device not employing the first photonic crystal structure, the light emitting device having the first photonic crystal structure more increases light extraction efficiency as a propagation distance of light is increased. In contrast, when the light emitting device does not employ the first photonic crystal structure, the light extraction efficiency is not increased after the propagation distance exceeds a predetermined value. - If there is no first photonic crystal structure, it signifies that the
non-metal pattern layer 80 or theprotrusion pattern layer conductive semiconductor layer 30 and thereflective layer 20. - In other words, the light emitting device employing the first photonic crystal structure more increases the light extraction efficiency compared to the light emitting device not employing the first photonic crystal structure.
-
FIG. 8 is a graph representing light extraction efficiency according to the lattice constant of thenon-metal pattern layer 80 in the first photonic crystal structure of the light emitting device according to the embodiments. In particular,FIG. 8 is a graph showing a simulation when thenon-metal pattern layer 80 has a refractive index of about 2.0, and includes an ITO layer having a pattern thickness of about 0.1 µm. - Referring to
FIG. 8 , when thenon-metal pattern layer 80 is formed with a lattice constant in the range of about λ/n to about 10λ/n, the light extraction efficiency can be improved. In this case, λ refers to the wavelength of light transmitted from the LED. For example, blue light from the LED has the wavelength of about 470nm. In addition, n refers to a refractive index of a material forming a light emitting layer of the light emitting device. For example, in the case of a GaN-based semiconductor layer, the refractive index is about 2.46. - Especially, when the
non-metal pattern layer 80 is formed with a lattice constant in the range of about λ/n to about 10λ/n, the light extraction efficiency is improved by more than 1.5 times that of the LED not employing the first photonic crystal structure. - According to the embodiment, the light emitting device emits light of about 470nm and includes a GaN-based semiconductor layer having a refractive index of about 2.46. In this case, λ/n is about 0.191 µm. As shown in
FIG. 8 , when thenon-metal pattern layer 80 has a lattice constant about 0.2 µm, the maximum light extraction efficiency is represented. - Although not shown, in the case of the light emitting device according to the second to fourth embodiments, the light extraction efficiency can be improved when the lattice constant of the
protrusion pattern layer reflective pattern layer 23 is in the rang of λ/n to about 10λ/n. -
FIG. 9 is a graph representing light extraction efficiency according to the pattern thickness of thenon-metal pattern layer 80 in the first photonic crystal structure of the light emitting device according to the embodiments. In particular,FIG. 9 is a graph showing a simulation when thenon-metal pattern layer 80 has a refractive index of about 2.0, and includes an ITO layer having lattice constants a of about 400nm and about 1200nm. - Referring to
FIG. 9 , when thenon-metal pattern layer 80 has a thickness in the range of about 10nm to 100nm regardless of the lattice constant of thenon-metal pattern layer 80, the light extraction efficiency is improved by more than 1.8 times. When thenon-metal pattern layer 80 has a thickness of about 100nm or more, the light extraction efficiency is more improved compared to that of the light emitting device not employing the first photonic crystal structure. The pattern thickness of thenon-metal pattern layer 80 need not exceed about 300nm or more. - Although not shown, when the
protrusion pattern layer protrusion pattern layer -
FIG. 10 is a graph showing light extraction efficiency when the first photonic crystal structure, the second photonic crystal structure, and both the first and second photonic crystal structures are formed in the light emitting device.FIG. 11 is a graph showing light extraction efficiency according to the lattice constant of the non-metal pattern layer of the first photonic crystal structure and a lattice constant of columns or holes of the second photonic crystal structure in the light emitting device according to the embodiment. - Referring to
FIGS. 10 and11 , in the case that the first photonic crystal structure is formed, the light extraction efficiency is the maximum when the lattice constant of thenon-metal pattern layer 80 forming the first photonic crystal structure is about 0.2 µm. In the case that the second photonic crystal structure is formed, the light extraction efficiency is the maximum when the lattice constant of columns or holes forming the second photonic crystal structure is about 0.6 µm. - In particular, when the first and second photonic crystal structures are formed, the lattice constant of the
non-metal pattern layer 80 forming the first photonic crystal structure is in the range of about 200nm to about 600nm, and the lattice constant of columns orholes 61 forming the second photonic crystal structure is in the range of about 600nm to about 1800nm, the light extraction efficiency is improved. The patternedstructure 61 may be present with any of the previously described embodiments. - Although the exemplary embodiments of the present invention have been described, it is understood that the present invention should not be limited to these exemplary embodiments but various changes and modifications can be made by one ordinary skilled in the art within the scope of the present invention as hereinafter claimed.
Claims (8)
- A light emitting device, comprising:a first photonic crystal structure (90) comprising a reflective layer (20) and a plurality of non-metal pattern elements (80) on the reflective layer;a second conductive semiconductor layer (30) on both the reflective layer and the non-metal pattern elements;an active layer (40) on the second conductive semiconductor layer;a first conductive semiconductor layer (50) on the active layer; anda second photonic crystal structure (100) on the first conductive semiconductor layer,wherein the second photonic crystal structure comprises:a non-conductive semiconductor layer (60) on the first conductive semiconductor layer; anda patterned structure (61) in a top surface of the non-conductive semiconductor layer,the light emitting device further comprising:a second electrode layer (10) under the reflective layer; anda first electrode layer (70) on the first conductive semiconductor layer.
- The light emitting device of claim 1, wherein lower and side surfaces of each of the plurality of non-metal pattern elements are surrounded by the reflective layer.
- The light emitting device of claim 1, wherein the reflective layer comprises at least one of silver (Ag), alloy comprising Ag, aluminum (Al), and alloy comprising Al.
- The light emitting device of claim 1, wherein the plurality of non-metal pattern elements comprise a transparent electrode, and wherein the transparent electrode comprises at least one of tin-doped indium oxide (ITO), zinc oxide (ZnO), gallium-doped zinc oxide (GZO), ruthenium oxide (RuOx), and iron oxide (IrOx).
- The light emitting device of claim 1, wherein the plurality of non-metal pattern elements comprise a dielectric substance, and wherein the dielectric substance comprises at least one of silicon oxide (SiO2), magnesium fluoride (MgF2), titanium dioxide (TiO2), aluminum oxide (Al2O3), spin on glass (SOG), and silicon nitride (Si3N4).
- The light emitting device of claim 1, wherein the plurality of non-metal pattern elements are surrounded by the reflective layer and are arranged with a lattice constant in a range of λ/n to 10λ/n, in which λ represents a wavelength of light emitted from the light emitting device, and n represents a refractive index of a material forming a light emitting layer of the light emitting device.
- The light emitting device of claim 1, wherein the reflective layer is surrounded by the non-metal pattern elements so that the reflective layer is arranged with a lattice constant in a range of about λ/n to about 10λ/n, in which λ represents a wavelength of light emitted from the light emitting device, and n represents a refractive index of a material forming a light emitting layer of the light emitting device.
- The light emitting device of claim 1, wherein the non-metal pattern elements are protrusions protruding from the second conductive semiconductor layer toward the reflective layer.
Applications Claiming Priority (1)
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KR1020090004951A KR101064082B1 (en) | 2009-01-21 | 2009-01-21 | Light emitting element |
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EP2211393A2 EP2211393A2 (en) | 2010-07-28 |
EP2211393A3 EP2211393A3 (en) | 2011-03-16 |
EP2211393B1 true EP2211393B1 (en) | 2017-01-04 |
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US (1) | US8115224B2 (en) |
EP (1) | EP2211393B1 (en) |
KR (1) | KR101064082B1 (en) |
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KR100921466B1 (en) | 2007-08-30 | 2009-10-13 | 엘지전자 주식회사 | Nitride light emitting device and method of making the same |
KR101064082B1 (en) * | 2009-01-21 | 2011-09-08 | 엘지이노텍 주식회사 | Light emitting element |
KR101210172B1 (en) | 2009-03-02 | 2012-12-07 | 엘지이노텍 주식회사 | Light emitting device |
KR101034211B1 (en) * | 2009-04-16 | 2011-05-12 | (재)나노소자특화팹센터 | Vertical light emitting device |
KR20110096680A (en) * | 2010-02-23 | 2011-08-31 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
KR101795053B1 (en) * | 2010-08-26 | 2017-11-07 | 엘지이노텍 주식회사 | Light emitting device, light emitting device package, light unit |
DE102010036269A1 (en) * | 2010-09-03 | 2012-03-08 | Osram Opto Semiconductors Gmbh | LED chip |
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Also Published As
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KR20100085578A (en) | 2010-07-29 |
US8115224B2 (en) | 2012-02-14 |
US20100181586A1 (en) | 2010-07-22 |
CN101783382A (en) | 2010-07-21 |
CN101783382B (en) | 2014-10-01 |
KR101064082B1 (en) | 2011-09-08 |
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EP2211393A3 (en) | 2011-03-16 |
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