EP2207364A1 - Component with a micromechanical microphone structure - Google Patents

Component with a micromechanical microphone structure Download PDF

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Publication number
EP2207364A1
EP2207364A1 EP09177681A EP09177681A EP2207364A1 EP 2207364 A1 EP2207364 A1 EP 2207364A1 EP 09177681 A EP09177681 A EP 09177681A EP 09177681 A EP09177681 A EP 09177681A EP 2207364 A1 EP2207364 A1 EP 2207364A1
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EP
European Patent Office
Prior art keywords
layer
membrane
counter
component
membranes
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EP09177681A
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German (de)
French (fr)
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EP2207364B1 (en
Inventor
Jochen Reinmuth
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/32—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only
    • H04R1/34—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by using a single transducer with sound reflecting, diffracting, directing or guiding means
    • H04R1/38—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by using a single transducer with sound reflecting, diffracting, directing or guiding means in which sound waves act upon both sides of a diaphragm and incorporating acoustic phase-shifting means, e.g. pressure-gradient microphone
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/01—Electrostatic transducers characterised by the use of electrets
    • H04R19/016—Electrostatic transducers characterised by the use of electrets for microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor

Definitions

  • the invention relates to a component having a micromechanical microphone structure, comprising at least a deflectable by the sound pressure first membrane, which acts as a deflectable electrode, a fixed acoustically permeable counter element, which acts as a counter electrode, and a further capacitance for evaluating the capacitance changes between the first deflectable electrode and the counter electrode.
  • the invention further relates to a method for producing such a component.
  • MEMS micro-electro-mechanical system
  • the sound pressure is usually detected in the form of a capacitance change between an acoustically active membrane and a substantially rigid counter electrode.
  • An evaluation concept for this type of microphones in which the capacitance change can be determined with a relatively low voltage between the membrane and the counterelectrode, is based on a comparison of the capacitance change with a fixed reference capacitance.
  • this reference capacitance is located on the same component as the measuring capacitance.
  • the present invention proposes a very space-saving micromechanical microphone structure with a measuring capacity and a reference capacitance, which has a high sensitivity in relation to their small size.
  • the fixed counter element between the deflectable first membrane and a second membrane is arranged.
  • the fixed counter element not only functions as a counterelectrode for the deflectable first diaphragm but also forms an electrode of the further capacitance, while the second diaphragm forms the second electrode of this further capacitance.
  • the measuring capacity and the further capacity are therefore one above the other, realized with a common center electrode.
  • This electrode arrangement is not only very space-saving, but also allows different Ausensejane, depending on whether it is to act in the other capacity to a constant reference capacity or a sound pressure-dependent capacity.
  • the fixed counter element and the second diaphragm are mechanically coupled but electrically insulated from each other so that they form a constant reference capacitance.
  • the reference capacitance thus consumes no additional component surface but is arranged within the active microphone surface.
  • the known from the prior art evaluation concept can be easily applied.
  • the further capacity also changes under the effect of the sound pressure, i. although the second membrane is deflected under the action of sound pressure.
  • the counter element according to the invention is arranged between the two membranes and forms a fixed electrode for both the measuring capacity and for the further capacity, the measuring capacity and the further capacity change in the same direction deflection of the two membranes in opposite directions.
  • the measurement signal can be amplified simply by combining the two capacitances to increase the microphone sensitivity.
  • the two membranes of the component according to the invention mechanically couple and electrically isolate against each other. In this case, it is sufficient if essentially only one of the two membranes is acoustically active, since the sound pressure is transmitted via the mechanical coupling directly to the other membrane.
  • a mechanical coupling is not required if both membranes of the device are acoustically active. In this case, it is advantageous if the two membranes are acoustically active and acoustically permeable in mutually offset subregions, in order to avoid interactions.
  • the membrane surfaces facing the counter element and / or the surfaces of the counter element are provided with a dielectric coating in order to avoid a short circuit of the measuring capacitance and / or the reference capacitance in overload situations.
  • the microphone structure may comprise an overload protection in the form of stops, which are formed in the surface of a deflectable membrane facing the counter element and / or in the surface of the counter element facing a deflectable membrane.
  • Component 10 shown comprises a micromechanical microphone structure, which is formed in a layer structure over a substrate 1.
  • This microphone structure consists essentially of two superposed membranes 11 and 12, between which a fixed counter-element 13 is arranged.
  • the membrane 11 is electrically insulated via insulating layers 2 and 4 on the one hand against the substrate 1 and on the other hand against the counter-element 13.
  • a further insulation layer 6 of the layer structure serves for the electrical insulation between the counter element 13 and the membrane 12.
  • the two membranes 11 and 12 and the counter element 13 consist at least in regions of an electrically conductive material, such as a correspondingly doped polysilicon. In this way, the membrane 11 together with the counter-element 13 forms a first capacitance, while the membrane 12 together with the counter-element 13 forms a second capacitance.
  • the counter element 13 is significantly thicker than the two membranes 11 and 12 and thus substantially rigid.
  • 13 through holes 131, 132 are formed in the counter element, so that the counter element 13 is acoustically transparent.
  • both membranes 11 and 12 are acoustically active in the embodiment described here. They are deflected independently of one another by the sound pressure, which acts on the membrane 12 starting from the component top side and acts on the membrane 11 via a sound opening 14 in the component rear side.
  • Through openings 111 are formed in the middle region of the membrane 11 so that the membrane 11 is acoustically active substantially only in the closed edge area.
  • this edge region of the membrane 12 is provided with passage openings 121, so that the membrane 12 substantially only in the closed central region is acoustically active.
  • This staggered arrangement of the through openings 111 and 121 or the acoustically active areas of the membranes 11 and 12 serves to avoid interactions between the two membranes 11 and 12. Due to the through holes 111, 121 and 131, 132 in the membranes 11 and 12 and in the Counter-element 13 causes the sound pressure in the same direction deflection of the two membranes 11 and 12. Since the counter-element 13 sandwich-like disposed between the two membranes 11 and 12, the first and second capacitance change in opposite directions. The evaluation takes place here by difference formation between the first and second capacity
  • the manufacturing method starts from a substrate 1, such as a silicon wafer.
  • a first sacrificial layer 2 is first deposited and patterned.
  • Fig. 2a shows the layer structure after the structuring of the first sacrificial layer 2, in which openings 21 were generated, which communicate with the through-openings 111 to be generated in the first membrane 11.
  • the first sacrificial layer 2 also acts as the first insulating layer 2. Typically, this is a thermal oxide or a TEOS oxide.
  • a first membrane layer 3 in the form of a polysilicon layer is deposited and doped.
  • Fig. 2b shows the layer structure, after the structuring of the membrane layer 3, in which not only the through holes 111 were generated but also a spring suspension 31 was formed for the membrane 11 to promote membrane deflections.
  • a second sacrificial layer 4 is deposited and patterned.
  • openings 41 were generated which communicate with the passage openings 111 in the first membrane layer 3.
  • an opening 42 was created, which is required for the realization of the electrical contacts of the individual capacitor electrodes of the device 10. This situation is in Fig. 2c shown. Since the second sacrificial layer 4 in the context of the device 10 acts as an insulating layer can these - like the first sacrificial layer 2 - are formed by a thermal oxide or a TEOS oxide.
  • an at least partially electrically conductive layer 5 is applied, from which the fixed counter-element 13 is formed.
  • a thicker epi-polysilicon layer 5 was produced and doped on the second sacrificial layer 4.
  • This epi-polysilicon layer 5 has not been patterned at least in the membrane region, so that the polysilicon of this layer 5 fills out the structuring of the underlying layers 4, 3 and 2, which is due to Fig. 2d is illustrated.
  • a polysilicon starter layer is typically deposited first before an epi-polysilicon layer is then deposited thereon. This epi-polysilicon is doped and can be planarized for better processing.
  • the fixed counter element can also be realized in a thinner polysilicon layer, which is stiffer than the two membranes in the layer structure suspended.
  • Another possibility is to realize the counter element in the form of a layer stack of polysilicon and oxide or nitride, which is under tensile stress. In this way it can also be achieved that the counter element reacts significantly less to sound waves than the membranes.
  • a third sacrificial layer 6 was deposited, which also acts as an insulating layer in the context of the device 10. During the structuring of this sacrificial layer 6, openings 61 were generated which communicate with the openings 121 to be produced in the second membrane 12 of the component 10. In addition, an opening 62 was created, which is required for the realization of electrical contacts.
  • Fig. 2e shows the layer structure with the structured third sacrificial layer 6.
  • a second membrane layer 7 in the form of a further polysilicon layer was deposited, doped and patterned on the third sacrificial layer 6, a spring-like diaphragm suspension 71 being produced here as well next to the passage openings 121.
  • the resulting layer structure is in Fig. 2f shown.
  • the layer structure of the component 10 also comprises one or more structured metal layers 8.
  • the metal layer 8 was applied to the second membrane layer 7 and structured, which is described in US Pat Fig. 2g is shown before the counter element or the epi-polysilicon layer 5 has been patterned and etching accesses were made to the sacrificial layers 2, 4 and 6 to expose the microphone structure.
  • the metal layer 8 for the realization of electrical contacts can also be generated at a later time.
  • the through-openings 121 in the second membrane layer 7, which continue in the openings 61 in the third sacrificial layer 6, have now been transferred into the epi-polysilicon layer 5, around the through-openings 131 in the edge region of the counter element 13 to produce.
  • the second sacrificial layer 4 serves as ⁇ tzstoppgrenze.
  • the result of this first step of trenching is in the form of trench trenches 91 in FIG Fig. 2h shown.
  • the sound opening 14 is first generated, which forms the rear side volume of the microphone structure.
  • This trench process stops at the first sacrificial layer 2 and continues to be deeper only in the region in which the epi-polysilicon layer 5 directly adjoins the substrate surface, ie in the region of the through-openings 111 in the first membrane layer 3. In this region, the trench process stopped only when reaching the third sacrificial layer 6, so that in the central region of the counter element 13 passage openings 132 arise.
  • the corresponding trench trenches 92 are in Fig. 2i to recognize.
  • the trench trenches 91 and 92 in conjunction with the sound aperture 14 are used as ⁇ tzzu réelle to expose the two membranes 11 and 12, which takes place for example by means of HF or in a gas phase etching.
  • the sacrificial layer material of the layers 2, 4 and 6 is removed in the regions below the first membrane 11 and between the counter element 13 and the two membranes 11 and 12.
  • the resulting device structure is in Fig. 2j shown. This figure essentially corresponds to Fig. 1 ,
  • the backside trench process can also be run before the front side trench process.
  • a further sacrificial layer is deposited and patterned before the individual sacrificial layer deposits in order to realize defined stops for the deflectable electrodes of the microphone structure.
  • a device 30 is in Fig. 3 shown.
  • the component 30 differs from that in FIG Fig. 1 shown component 10 only by stops 122 and 133 which are formed on the underside of the second diaphragm 12 and the counter-element 13.
  • the stops 122 and 133 form the contact surfaces between the electrodes of the microphone structure. The smaller these contact surfaces, the lower the adhesive force between the electrodes and, accordingly, the force required to bring the membranes 11 and 12 back to their original position.
  • the stops 122 and 133 also consist of a dielectric material or at least are coated with such, so that they prevent a short circuit of the first and / or second capacitance in overload situations.
  • a dielectric layer can be deposited before or after the sacrificial layer deposition, which advantageously has a significantly lower etching rate than the sacrificial layer, such as SiN or silicon-rich nitride.
  • the adhesive force between SiN and Si is so low that the membranes can easily be brought back to their original position after overload situations.
  • the stops 122 are formed on the outer edge of the acoustically active region of the second membrane 12.
  • the stops 133 extend in extension from the counter element 13 in the direction of the first diaphragm 11, along the inner edge of the acoustically active region of the first diaphragm 11. In this way wear the stops 122 and 133 also to reduce the acoustic short circuit between the offset acoustically active and transparent membranes 11 and 12 at.
  • Fig. 4 shows a component 50 with a micromechanical microphone structure
  • the invention comprises two superposed membranes 51 and 52, between which a fixed counter-element 53 is arranged.
  • the two membranes 51 and 52 are suspended in each case via a spring suspension 31 and 71 in the layer structure of the component 50 in order to favor their deflection.
  • the membrane 51 is electrically insulated via insulating layers 2 and 4 on the one hand against the substrate 1 and on the other hand against the counter element 53.
  • a further insulation layer 6 of the layer structure serves for electrical insulation between the counter element 53 and the membrane 52.
  • the two membranes 51 and 52 and the counter element 53 at least partially consist of an electrically conductive material, such as a correspondingly doped polysilicon. In this way, the membrane 51 together with the counter-element 53 forms a first capacitance, while the membrane 52 together with the counter-element 53 forms a second capacitance.
  • the counter-element 53 here is significantly thicker than the two membranes 51 and 52 and has first passage openings 531, so that it is substantially rigid and acoustically transparent. In order to achieve that the counter element reacts much less on sound waves than the membranes, but the counter element can also be realized in a thinner polysilicon layer, which is stiffer than the two membranes suspended in the layer structure. Another possibility is to realize the counter element in the form of a layer stack of polysilicon and oxide or nitride, which is under tensile stress. In addition, 53 second through holes 532 are formed for connecting webs 55 in the counter element, over which the two membranes 51 and 52 are mechanically coupled.
  • the first diaphragm 51 is largely closed and thus acoustically active, while the entire microphone surface of the second diaphragm 52 is provided with passage openings 521, so that the second diaphragm 52 is acoustically at most low active.
  • the mechanical coupling between the two membranes 51 and 52 causes both membranes 51 and 52 are deflected in the same direction, when the first Membrane 51 is acted upon via the sound opening 54 in the back of the component with sound pressure. Accordingly, as in the case of the component 10, the first and second capacitances change in opposite directions. The evaluation is also done here by subtraction between the first and second capacity.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Otolaryngology (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)

Abstract

The component (10) has a fixed anti element (13) that is arranged between a deflected diaphragm (11) and another diaphragm (12). The fixed anti element functions as an electrode of a capacitance, where the latter diaphragm forms another electrode of another capacitance. An independent claim is also included for a method for manufacturing a component with micromechanical microphone structure.

Description

Stand der TechnikState of the art

Die Erfindung betrifft ein Bauelement mit einer mikromechanischen Mikrofonstruktur, mindestens umfassend eine durch den Schalldruck auslenkbare erste Membran, die als auslenkbare Elektrode fungiert, ein feststehendes akustisch durchlässiges Gegenelement, das als Gegenelektrode fungiert, und eine weitere Kapazität zur Auswertung der Kapazitätsänderungen zwischen der ersten auslenkbaren Elektrode und der Gegenelektrode.The invention relates to a component having a micromechanical microphone structure, comprising at least a deflectable by the sound pressure first membrane, which acts as a deflectable electrode, a fixed acoustically permeable counter element, which acts as a counter electrode, and a further capacitance for evaluating the capacitance changes between the first deflectable electrode and the counter electrode.

Die Erfindung betrifft ferner ein Verfahren zur Herstellung eines solchen Bauelements.The invention further relates to a method for producing such a component.

Bei den aus der Praxis bekannten MEMS(Micro-Electro-Mechanical-System)-Mikrofonen wird der Schalldruck meist in Form einer Kapazitätsänderung zwischen einer akustisch aktiven Membran und einer weitgehend starren Gegenelektrode erfasst. Ein Auswertekonzept für diese Art von Mikrofonen, bei dem die Kapazitätsänderung mit relativ geringer Spannung zwischen der Membran und der Gegenelektrode bestimmt werden kann, beruht auf einem Vergleich der Kapazitätsänderung mit einer festen Referenzkapazität. Vorteilhafterweise befindet sich diese Referenzkapazität auf demselben Bauteil wie die Messkapazität.In the known from practice MEMS (micro-electro-mechanical system) microphones, the sound pressure is usually detected in the form of a capacitance change between an acoustically active membrane and a substantially rigid counter electrode. An evaluation concept for this type of microphones, in which the capacitance change can be determined with a relatively low voltage between the membrane and the counterelectrode, is based on a comparison of the capacitance change with a fixed reference capacitance. Advantageously, this reference capacitance is located on the same component as the measuring capacitance.

Offenbarung der ErfindungDisclosure of the invention

Mit der vorliegenden Erfindung wird eine sehr platzsparende mikromechanische Mikrofonstruktur mit einer Messkapazität und einer Referenzkapazität vorgeschlagen, die im Verhältnis zu ihrer geringen Baugröße eine hohe Empfindlichkeit aufweist.The present invention proposes a very space-saving micromechanical microphone structure with a measuring capacity and a reference capacitance, which has a high sensitivity in relation to their small size.

Dazu ist das feststehende Gegenelement zwischen der auslenkbaren ersten Membran und einer zweiten Membran angeordnet. Das feststehende Gegenelement fungiert erfindungsgemäß nicht nur als Gegenelektrode für die auslenkbare erste Membran sondern bildet auch eine Elektrode der weiteren Kapazität, während die zweite Membran die zweite Elektrode dieser weiteren Kapazität bildet.For this purpose, the fixed counter element between the deflectable first membrane and a second membrane is arranged. According to the invention, the fixed counter element not only functions as a counterelectrode for the deflectable first diaphragm but also forms an electrode of the further capacitance, while the second diaphragm forms the second electrode of this further capacitance.

Erfindungsgemäß werden die Messkapazität und die weitere Kapazität demnach übereinander, mit einer gemeinsamen Mittelelektrode realisiert. Diese Elektrodenanordnung ist nicht nur sehr platzsparend, sondern ermöglicht auch unterschiedliche Auswertekonzepte, je nach dem, ob es sich bei der weiteren Kapazität um eine konstante Referenzkapazität oder eine vom Schalldruck abhängige Kapazität handeln soll.According to the invention, the measuring capacity and the further capacity are therefore one above the other, realized with a common center electrode. This electrode arrangement is not only very space-saving, but also allows different Auswertekonzepte, depending on whether it is to act in the other capacity to a constant reference capacity or a sound pressure-dependent capacity.

In einer ersten Ausführungsform des erfindungsgemäßen Bauelements sind das feststehende Gegenelement und die zweite Membran mechanisch gekoppelt aber gegeneinander elektrisch isoliert, so dass sie eine konstante Referenzkapazität bilden. Die Referenzkapazität verbraucht hier also keine zusätzliche Bauteiloberfläche sondern ist innerhalb der aktiven Mikrofonfläche angeordnet. Bei dieser Variante kann einfach das aus dem Stand der Technik bekannte Auswertekonzept angewendet werden.In a first embodiment of the device according to the invention, the fixed counter element and the second diaphragm are mechanically coupled but electrically insulated from each other so that they form a constant reference capacitance. The reference capacitance thus consumes no additional component surface but is arranged within the active microphone surface. In this variant, the known from the prior art evaluation concept can be easily applied.

Von besonderem Vorteil ist es, wenn sich auch die weitere Kapazität unter Einwirkung des Schalldrucks verändert, d.h. wenn auch die zweite Membran unter Einwirkung des Schalldrucks ausgelenkt wird. Da das Gegenelement erfindungsgemäß zwischen den beiden Membranen angeordnet ist und eine feststehende Elektrode sowohl für die Messkapazität als auch für die weitere Kapazität bildet, verändern sich die Messkapazität und die weitere Kapazität bei gleichsinniger Auslenkung der beiden Membranen gegenläufig. In diesem Fall kann das Messsignal einfach durch Verknüpfung der beiden Kapazitäten verstärkt werden, um die Mikrofonempfindlichkeit zu erhöhen.It is particularly advantageous if the further capacity also changes under the effect of the sound pressure, i. although the second membrane is deflected under the action of sound pressure. Since the counter element according to the invention is arranged between the two membranes and forms a fixed electrode for both the measuring capacity and for the further capacity, the measuring capacity and the further capacity change in the same direction deflection of the two membranes in opposite directions. In this case, the measurement signal can be amplified simply by combining the two capacitances to increase the microphone sensitivity.

Eine Möglichkeit zur Realisierung einer solchen schalldruckabhängigen weiteren Kapazität besteht darin, die beiden Membranen des erfindungsgemäßen Bauelements mechanisch zu koppeln und gegeneinander elektrisch zu isolieren. In diesem Fall ist es ausreichend, wenn im wesentlichen nur eine der beiden Membranen akustisch aktiv ist, da der Schalldruck über die mechanische Kopplung direkt auf die andere Membran übertragen wird.One possibility for realizing such a sound pressure-dependent further capacity is the two membranes of the component according to the invention mechanically couple and electrically isolate against each other. In this case, it is sufficient if essentially only one of the two membranes is acoustically active, since the sound pressure is transmitted via the mechanical coupling directly to the other membrane.

Eine mechanische Kopplung ist dann nicht erforderlich, wenn beide Membranen des Bauelements akustisch aktiv sind. In diesem Fall ist es von Vorteil, wenn die beiden Membranen in zueinander versetzten Teilbereichen akustisch aktiv und akustisch durchlässig ausgebildet sind, um Wechselwirkungen zu vermeiden.A mechanical coupling is not required if both membranes of the device are acoustically active. In this case, it is advantageous if the two membranes are acoustically active and acoustically permeable in mutually offset subregions, in order to avoid interactions.

Vorteilhafterweise sind die dem Gegenelement zugewandten Membranoberflächen und/oder die Oberflächen des Gegenelements mit einer dielektrischen Beschichtung versehen, um einen Kurzschluss der Messkapazität und/oder der Referenzkapazität in Überlastsituationen zu vermeiden.Advantageously, the membrane surfaces facing the counter element and / or the surfaces of the counter element are provided with a dielectric coating in order to avoid a short circuit of the measuring capacitance and / or the reference capacitance in overload situations.

Des Weiteren kann die Mikrofonstruktur einen Überlastschutz in Form von Anschlägen umfassen, die in der dem Gegenelement zugewandten Oberfläche einer auslenkbaren Membran und/oder in der einer auslenkbaren Membran zugewandten Oberfläche des Gegenelements ausgebildet sind.Furthermore, the microphone structure may comprise an overload protection in the form of stops, which are formed in the surface of a deflectable membrane facing the counter element and / or in the surface of the counter element facing a deflectable membrane.

Kurze Beschreibung der ZeichnungenBrief description of the drawings

Wie bereits voranstehend erörtert, gibt es verschiedene Möglichkeiten, die Lehre der vorliegenden Erfindung in vorteilhafter Weise auszugestalten und weiterzubilden. Dazu wird einerseits auf die dem unabhängigen Patentanspruch 1 nachgeordneten Patentansprüche verwiesen und andererseits auf die nachfolgende Beschreibung mehrerer Ausführungsbeispiele der Erfindung. Anhand der Figuren wird auch das beanspruchte Herstellungsverfahren näher erläutert.

Fig. 1
zeigt eine schematische Schnittdarstellung eines erfindungsge- mäßen Bauelements 10 mit zwei akustisch aktiven Membranen,
Fig. 2a bis 2j
veranschaulichen die einzelnen Verfahrensschritte zur Herstel- lung des Bauelements 10 anhand von schematischen Schnitt- darstellungen,
Fig. 3
zeigt eine schematische Schnittdarstellung einer Variante des Bauelements 10, und
Fig. 4
zeigt eine schematische Schnittdarstellung einer zweiten Varian- te eines erfindungsgemäßen Bauelements 40.
As already discussed above, there are various possibilities for embodying and developing the teaching of the present invention in an advantageous manner. For this purpose, reference is made, on the one hand, to the claims subordinate to independent claim 1 and, on the other hand, to the following description of several embodiments of the invention. The claimed production method will also be explained in more detail with reference to the figures.
Fig. 1
shows a schematic sectional view of a device 10 according to the invention with two acoustically active membranes,
Fig. 2a to 2j
illustrate the individual method steps for the production of the component 10 on the basis of schematic sectional representations,
Fig. 3
shows a schematic sectional view of a variant of the device 10, and
Fig. 4
shows a schematic sectional view of a second variant of a component 40 according to the invention.

Ausführungsformen der ErfindungEmbodiments of the invention

Das in Fig. 1 dargestellte Bauelement 10 umfasst eine mikromechanische Mikrofonstruktur, die in einem Schichtaufbau über einem Substrat 1 ausgebildet ist. Diese Mikrofonstruktur besteht im Wesentlichen aus zwei übereinander angeordneten Membranen 11 und 12, zwischen denen ein feststehendes Gegenelement 13 angeordnet ist. Die Membran 11 ist über Isolationsschichten 2 und 4 einerseits gegen das Substrat 1 und andererseits gegen das Gegenelement 13 elektrisch isoliert. Eine weitere Isolationsschicht 6 des Schichtaufbaus dient der elektrischen Isolation zwischen dem Gegenelement 13 und der Membran 12. Die beiden Membranen 11 und 12 sowie das Gegenelement 13 bestehen zumindest bereichsweise aus einem elektrisch leitfähigen Material, wie z.B. einem entsprechend dotierten Polysilizium. Auf diese Weise bildet die Membran 11 zusammen mit dem Gegenelement 13 eine erste Kapazität, während die Membran 12 zusammen mit dem Gegenelement 13 eine zweite Kapazität bildet.This in Fig. 1 Component 10 shown comprises a micromechanical microphone structure, which is formed in a layer structure over a substrate 1. This microphone structure consists essentially of two superposed membranes 11 and 12, between which a fixed counter-element 13 is arranged. The membrane 11 is electrically insulated via insulating layers 2 and 4 on the one hand against the substrate 1 and on the other hand against the counter-element 13. A further insulation layer 6 of the layer structure serves for the electrical insulation between the counter element 13 and the membrane 12. The two membranes 11 and 12 and the counter element 13 consist at least in regions of an electrically conductive material, such as a correspondingly doped polysilicon. In this way, the membrane 11 together with the counter-element 13 forms a first capacitance, while the membrane 12 together with the counter-element 13 forms a second capacitance.

Das Gegenelement 13 ist deutlich dicker als die beiden Membranen 11 und 12 und damit im Wesentlichen starr. Außerdem sind im Gegenelement 13 Durchgangsöffnungen 131, 132 ausgebildet, so dass das Gegenelement 13 akustisch durchlässig ist. Im Gegensatz dazu sind beide Membranen 11 und 12 im hier beschriebenen Ausführungsbeispiel akustisch aktiv. Sie werden unabhängig voneinander durch den Schalldruck ausgelenkt, der von der Bauteiloberseite ausgehend auf die Membran 12 einwirkt und über eine Schallöffnung 14 in der Bauteilrückseite auf die Membran 11 einwirkt. Im Mittelbereich der Membran 11 sind Durchgangsöffnungen 111 ausgebildet, so dass die Membran 11 im Wesentlichen nur im geschlossenen Randbereich akustisch aktiv ist. Im Unterschied dazu ist dieser Randbereich der Membran 12 mit Durchgangsöffnungen 121 versehen, so dass die Membran 12 im Wesentlichen nur im geschlossenen Mittelbereich akustisch aktiv ist. Diese versetzte Anordnung der Durchgangsöffnungen 111 und 121 bzw. der akustisch aktiven Bereiche der Membranen 11 und 12 dient der Vermeidung von Wechselwirkungen zwischen den beiden Membranen 11 und 12. Aufgrund der Durchgangsöffnungen 111, 121 und 131, 132 in den Membranen 11 und 12 sowie im Gegenelement 13 bewirkt der Schalldruck eine gleichsinnige Auslenkung der beiden Membranen 11 und 12. Da das Gegenelement 13 sandwichartigen zwischen den beiden Membranen 11 und 12 angeordnet ist, ändern sich die erste und zweite Kapazität gegensinnig. Die Auswertung erfolgt hier durch Differenzbildung zwischen der ersten und zweiten KapazitätThe counter element 13 is significantly thicker than the two membranes 11 and 12 and thus substantially rigid. In addition, 13 through holes 131, 132 are formed in the counter element, so that the counter element 13 is acoustically transparent. In contrast, both membranes 11 and 12 are acoustically active in the embodiment described here. They are deflected independently of one another by the sound pressure, which acts on the membrane 12 starting from the component top side and acts on the membrane 11 via a sound opening 14 in the component rear side. Through openings 111 are formed in the middle region of the membrane 11 so that the membrane 11 is acoustically active substantially only in the closed edge area. In contrast, this edge region of the membrane 12 is provided with passage openings 121, so that the membrane 12 substantially only in the closed central region is acoustically active. This staggered arrangement of the through openings 111 and 121 or the acoustically active areas of the membranes 11 and 12 serves to avoid interactions between the two membranes 11 and 12. Due to the through holes 111, 121 and 131, 132 in the membranes 11 and 12 and in the Counter-element 13 causes the sound pressure in the same direction deflection of the two membranes 11 and 12. Since the counter-element 13 sandwich-like disposed between the two membranes 11 and 12, the first and second capacitance change in opposite directions. The evaluation takes place here by difference formation between the first and second capacity

Die Herstellung des in Fig. 1 dargestellten Bauelements 10 wird nachfolgend anhand der Fig. 2a bis 2j erläutert.The production of in Fig. 1 illustrated component 10 will be described below with reference to the Fig. 2a to 2j explained.

Wie bereits erwähnt, geht das Herstellungsverfahren von einem Substrat 1, wie z.B. einem Siliziumwafer, aus. Auf diesem Substrat wird zunächst eine erste Opferschicht 2 abgeschieden und strukturiert. Fig. 2a zeigt den Schichtaufbau nach der Strukturierung der ersten Opferschicht 2, bei der Öffnungen 21 erzeugt wurden, die mit den zu erzeugenden Durchgangsöffnungen 111 in der ersten Membran 11 kommunizieren. Die erste Opferschicht 2 fungiert im Rahmen des Bauelements 10 auch als erste Isolationsschicht 2. Typischerweise handelt es sich dabei um ein thermisches Oxid oder ein TEOS-Oxid.As already mentioned, the manufacturing method starts from a substrate 1, such as a silicon wafer. On this substrate, a first sacrificial layer 2 is first deposited and patterned. Fig. 2a shows the layer structure after the structuring of the first sacrificial layer 2, in which openings 21 were generated, which communicate with the through-openings 111 to be generated in the first membrane 11. Within the scope of the component 10, the first sacrificial layer 2 also acts as the first insulating layer 2. Typically, this is a thermal oxide or a TEOS oxide.

Auf der strukturierten ersten Opferschicht 2 wird nun eine erste Membranschicht 3 in Form einer Polysiliziumschicht abgeschieden und dotiert. Fig. 2b zeigt den Schichtaufbau, nach der Strukturierung der Membranschicht 3, bei der nicht nur die Durchgangsöffnungen 111 erzeugt wurden sondern auch eine Federaufhängung 31 für die Membran 11 ausgebildet wurde, um Membranauslenkungen zu begünstigen.On the structured first sacrificial layer 2, a first membrane layer 3 in the form of a polysilicon layer is deposited and doped. Fig. 2b shows the layer structure, after the structuring of the membrane layer 3, in which not only the through holes 111 were generated but also a spring suspension 31 was formed for the membrane 11 to promote membrane deflections.

Darüber wird eine zweite Opferschicht 4 abgeschieden und strukturiert. Im hier beschriebenen Ausführungsbeispiel wurden dabei Öffnungen 41 erzeugt, die mit den Durchgangsöffnungen 111 in der ersten Membranschicht 3 kommunizieren. Des Weiteren wurde eine Öffnung 42 erzeugt, die für die Realisierung der elektrischen Kontakte der einzelnen Kondensatorelektroden des Bauelements 10 benötigt wird. Diese Situation ist in Fig. 2c dargestellt. Da auch die zweite Opferschicht 4 im Rahmen des Bauelements 10 als Isolationsschicht fungiert, kann diese - wie schon die erste Opferschicht 2 - durch ein thermisches Oxid oder ein TEOS-Oxid gebildet werden.In addition, a second sacrificial layer 4 is deposited and patterned. In the exemplary embodiment described here, openings 41 were generated which communicate with the passage openings 111 in the first membrane layer 3. Furthermore, an opening 42 was created, which is required for the realization of the electrical contacts of the individual capacitor electrodes of the device 10. This situation is in Fig. 2c shown. Since the second sacrificial layer 4 in the context of the device 10 acts as an insulating layer can these - like the first sacrificial layer 2 - are formed by a thermal oxide or a TEOS oxide.

Auf die zweite Opferschicht 4 wird eine zumindest bereichsweise elektrisch leitfähige Schicht 5 aufgebracht, aus der das feststehende Gegenelements 13 herausgebildet wird. Im hier beschriebenen Ausführungsbeispiel wurde dazu eine dickere Epi-Polysiliziumschicht 5 auf der zweiten Opferschicht 4 erzeugt und dotiert. Diese Epi-Polysiliziumschicht 5 wurde zumindest im Membranbereich nicht strukturiert, so dass das Polysilizium dieser Schicht 5 die Strukturierung der darunter liegenden Schichten 4, 3 und 2 ausfüllt, was durch Fig. 2d veranschaulicht wird. Zum Erzeugen der Epi-Polysiliziumschicht 5 wird typischerweise zunächst eine Polysiliziumstartschicht abgeschieden, bevor darauf dann eine Epi-Polysiliziumschicht abgeschieden wird. Dieses Epi-Polysilizium wird dotiert und kann zur besseren Weiterverarbeitung planarisiert werden. Alternativ kann das feststehende Gegenelement aber auch in einer dünneren Polysiliziumschicht realisiert werden, die steifer als die beiden Membranen im Schichtaufbau aufgehängt wird. Eine weitere Möglichkeit besteht darin, das Gegenelement in Form eines Schichtstapels aus Polysilizium und Oxid bzw. Nitrid zu realisieren, der unter Zugstress steht. Auf diese Weise kann ebenfalls erreicht werden, dass das Gegenelement signifikant weniger auf Schallwellen reagiert als die Membranen.On the second sacrificial layer 4, an at least partially electrically conductive layer 5 is applied, from which the fixed counter-element 13 is formed. In the exemplary embodiment described here, a thicker epi-polysilicon layer 5 was produced and doped on the second sacrificial layer 4. This epi-polysilicon layer 5 has not been patterned at least in the membrane region, so that the polysilicon of this layer 5 fills out the structuring of the underlying layers 4, 3 and 2, which is due to Fig. 2d is illustrated. To form the epi-polysilicon layer 5, a polysilicon starter layer is typically deposited first before an epi-polysilicon layer is then deposited thereon. This epi-polysilicon is doped and can be planarized for better processing. Alternatively, the fixed counter element can also be realized in a thinner polysilicon layer, which is stiffer than the two membranes in the layer structure suspended. Another possibility is to realize the counter element in the form of a layer stack of polysilicon and oxide or nitride, which is under tensile stress. In this way it can also be achieved that the counter element reacts significantly less to sound waves than the membranes.

Über der Epi-Polysiliziumschicht 5 wurde eine dritte Opferschicht 6 abgeschieden, die im Rahmen des Bauelements 10 ebenfalls als Isolationsschicht fungiert. Bei der Strukturierung dieser Opferschicht 6 wurden Öffnungen 61 erzeugt, die mit den zu erzeugenden Öffnungen 121 in der zweiten Membran 12 des Bauelements 10 kommunizieren. Außerdem wurde eine Öffnung 62 erzeugt, die zur Realisierung von elektrischen Kontakten benötigt wird. Fig. 2e zeigt den Schichtaufbau mit der strukturierten dritten Opferschicht 6.Over the epi-polysilicon layer 5, a third sacrificial layer 6 was deposited, which also acts as an insulating layer in the context of the device 10. During the structuring of this sacrificial layer 6, openings 61 were generated which communicate with the openings 121 to be produced in the second membrane 12 of the component 10. In addition, an opening 62 was created, which is required for the realization of electrical contacts. Fig. 2e shows the layer structure with the structured third sacrificial layer 6.

Dann wurde auf der dritten Opferschicht 6 eine zweite Membranschicht 7 in Form einer weiteren Polysiliziumschicht abgeschieden, dotiert und strukturiert, wobei auch hier neben den Durchgangsöffnungen 121 eine federartige Membranaufhängung 71 erzeugt wurde. Der resultierende Schichtaufbau ist in Fig. 2f dargestellt.Then, a second membrane layer 7 in the form of a further polysilicon layer was deposited, doped and patterned on the third sacrificial layer 6, a spring-like diaphragm suspension 71 being produced here as well next to the passage openings 121. The resulting layer structure is in Fig. 2f shown.

Zur späteren Kontaktierung umfasst der Schichtaufbau des Bauelements 10 schließlich noch eine oder mehrere strukturierte Metallschichten 8. Im hier beschriebenen Ausführungsbeispiel wurde die Metallschicht 8 auf die zweite Membranschicht 7 aufgebracht und strukturiert, was in Fig. 2g dargestellt ist, bevor das Gegenelement bzw. die Epi-Polysiliziumschicht 5 strukturiert wurde und Ätzzugänge zu den Opferschichten 2, 4 und 6 zum Freilegen der Mikrofonstruktur erzeugt wurden. Die Metallschicht 8 für die Realisierung elektrischer Kontakte kann aber auch zu einem späteren Zeitpunkt erzeugt werden.Finally, for subsequent contacting, the layer structure of the component 10 also comprises one or more structured metal layers 8. In the exemplary embodiment described here, the metal layer 8 was applied to the second membrane layer 7 and structured, which is described in US Pat Fig. 2g is shown before the counter element or the epi-polysilicon layer 5 has been patterned and etching accesses were made to the sacrificial layers 2, 4 and 6 to expose the microphone structure. However, the metal layer 8 for the realization of electrical contacts can also be generated at a later time.

In einem von der Vorderseite bzw. Oberseite des Schichtaufbaus ausgehenden Trenchschritt wurden nun die Durchgangsöffnungen 121 in der zweiten Membranschicht 7, die sich in den Öffnungen 61 in der dritten Opferschicht 6 fortsetzen, in die Epi-Polysiliziumschicht 5 übertragen, um die Durchgangsöffnungen 131 im Randbereich des Gegenelements 13 zu erzeugen. Dabei dient die zweite Opferschicht 4 als Ätzstoppgrenze. Das Ergebnis dieses ersten Trenchschritts ist in Form der Trenchgräben 91 in Fig. 2h dargestellt.In a trench step emanating from the front side or upper side of the layer structure, the through-openings 121 in the second membrane layer 7, which continue in the openings 61 in the third sacrificial layer 6, have now been transferred into the epi-polysilicon layer 5, around the through-openings 131 in the edge region of the counter element 13 to produce. In this case, the second sacrificial layer 4 serves as Ätzstoppgrenze. The result of this first step of trenching is in the form of trench trenches 91 in FIG Fig. 2h shown.

In einem zweiten Trenchschritt, der von der Substratrückseite ausgeht, wird zunächst die Schallöffnung 14 erzeugt, die das Rückseitenvolumen der Mikrofonstruktur bildet. Dieser Trenchprozess stoppt an der ersten Opferschicht 2 und geht nur in dem Bereich weiter in die Tiefe, in dem die Epi-Polysiliziumschicht 5 direkt an die Substratoberfläche grenzt, d.h. im Bereich der Durchgangsöffnungen 111 in der ersten Membranschicht 3. In diesem Bereich wird der Trenchprozess erst bei Erreichen der dritten Opferschicht 6 gestoppt, so dass im Mittelbereich des Gegenelements 13 Durchgangsöffnungen 132 entstehen. Die entsprechenden Trenchgräben 92 sind in Fig. 2i zu erkennen.In a second trench step, starting from the substrate rear side, the sound opening 14 is first generated, which forms the rear side volume of the microphone structure. This trench process stops at the first sacrificial layer 2 and continues to be deeper only in the region in which the epi-polysilicon layer 5 directly adjoins the substrate surface, ie in the region of the through-openings 111 in the first membrane layer 3. In this region, the trench process stopped only when reaching the third sacrificial layer 6, so that in the central region of the counter element 13 passage openings 132 arise. The corresponding trench trenches 92 are in Fig. 2i to recognize.

Die Trenchgräben 91 und 92 in Verbindung mit der Schallöffnung 14 werden als Ätzzugänge zum Freilegen der beiden Membranen 11 und 12 genutzt, was beispielsweise mit Hilfe von HF oder in einem Gasphasenätzverfahren erfolgt. Dabei wird das Opferschichtmaterial der Schichten 2, 4 und 6 in den Bereichen unter der ersten Membran 11 und zwischen dem Gegenelement 13 und den beiden Membran 11 und 12 entfernt. Die resultierende Bauelementstruktur ist in Fig. 2j dargestellt. Diese Figur entspricht im Wesentlichen der Fig. 1.The trench trenches 91 and 92 in conjunction with the sound aperture 14 are used as Ätzzugänge to expose the two membranes 11 and 12, which takes place for example by means of HF or in a gas phase etching. In this case, the sacrificial layer material of the layers 2, 4 and 6 is removed in the regions below the first membrane 11 and between the counter element 13 and the two membranes 11 and 12. The resulting device structure is in Fig. 2j shown. This figure essentially corresponds to Fig. 1 ,

An dieser Stelle sei angemerkt, dass auch Abweichungen von der voranstehend beschriebenen Prozessfolge möglich sind. So kann der rückseitige Trenchprozess auch vor dem Vorderseiten-Trenchprozess gefahren werden. Außerdem kann es sich als günstig erweisen, bereits nach dem ersten Trenchschritt einen Teil des Opferschichtmaterials zu entfernen. Die beiden Membranen werden dann nach dem zweiten Trenchschritt in einem zweiten Ätzschritt vollständig freigestellt.It should be noted at this point that deviations from the process sequence described above are also possible. Thus, the backside trench process can also be run before the front side trench process. In addition, it may prove advantageous to remove part of the sacrificial layer material after the first trenching step. The two membranes are then completely released after the second trench step in a second etching step.

Gemäß einer vorteilhaften Variante der Erfindung wird vor den einzelnen Opferschichtabscheidungen eine weitere Opferschicht abgeschieden und strukturiert, um definierte Anschläge für die auslenkbaren Elektroden der Mikrofonstruktur zu realisieren. Ein derartiges Bauelement 30 ist in Fig. 3 dargestellt. Das Bauelement 30 unterscheidet sich von dem in Fig. 1 dargestellten Bauelement 10 lediglich durch Anschläge 122 und 133, die an der Unterseite der zweiten Membran 12 und des Gegenelements 13 ausgebildet sind. Im Falle von Überlastsituationen bilden die Anschläge 122 und 133 die Berührungsflächen zwischen den Elektroden der Mikrofonstruktur. Je kleiner diese Berührungsflächen sind, um so geringer ist die Haftkraft zwischen den Elektroden und dementsprechend auch die Kraft, die erforderlich ist, um die Membranen 11 und 12 wieder in ihre Ausgangslage zu bringen.
Von besonderem Vorteil ist es, wenn die Anschläge 122 und 133 zudem aus einem dielektrischen Material bestehen oder zumindest mit einem solchen beschichtet sind, so dass sie einen Kurzschluss der ersten und/oder zweiten Kapazität in Überlastsituationen verhindern. Dadurch wird die Elektronik geschützt und ein Festbrennen der Elektroden vermieden. Zur Realisierung derartiger Anschläge kann vor oder auch nach der Opferschichtabscheidung eine dielektrische Schicht abgeschieden werden, die vorteilhafterweise eine deutlich geringer Ätzrate als die Opferschicht hat, wie beispielsweise SiN oder siliziumreiches Nitrid. Zudem ist die Haftkraft zwischen SiN und Si so gering, dass sich die Membranen nach Überlastsituationen besonders einfach wieder in ihre Ausgangslage bringen lassen.
Bei dem in Fig. 3 dargestellten Ausführungsbeispiel sind die Anschläge 122 am äußeren Rand des akustisch aktiven Bereichs der zweiten Membran 12 ausgebildet. Die Anschläge 133 erstrecken sich in Verlängerung dazu vom Gegenelement 13 in Richtung erste Membran 11, und zwar entlang des inneren Randes des akustisch aktiven Bereichs der ersten Membran 11. Auf diese Weise tragen die Anschläge 122 und 133 auch noch zur Verringerung des akustischen Kurzschlusses zwischen den versetzt akustisch aktiven und transparenten Membranen 11 und 12 bei.According to an advantageous variant of the invention, a further sacrificial layer is deposited and patterned before the individual sacrificial layer deposits in order to realize defined stops for the deflectable electrodes of the microphone structure. Such a device 30 is in Fig. 3 shown. The component 30 differs from that in FIG Fig. 1 shown component 10 only by stops 122 and 133 which are formed on the underside of the second diaphragm 12 and the counter-element 13. In the case of overload situations, the stops 122 and 133 form the contact surfaces between the electrodes of the microphone structure. The smaller these contact surfaces, the lower the adhesive force between the electrodes and, accordingly, the force required to bring the membranes 11 and 12 back to their original position.
It is particularly advantageous if the stops 122 and 133 also consist of a dielectric material or at least are coated with such, so that they prevent a short circuit of the first and / or second capacitance in overload situations. This protects the electronics and prevents the electrodes from burning down. To realize such attacks, a dielectric layer can be deposited before or after the sacrificial layer deposition, which advantageously has a significantly lower etching rate than the sacrificial layer, such as SiN or silicon-rich nitride. In addition, the adhesive force between SiN and Si is so low that the membranes can easily be brought back to their original position after overload situations.
At the in Fig. 3 illustrated embodiment, the stops 122 are formed on the outer edge of the acoustically active region of the second membrane 12. The stops 133 extend in extension from the counter element 13 in the direction of the first diaphragm 11, along the inner edge of the acoustically active region of the first diaphragm 11. In this way wear the stops 122 and 133 also to reduce the acoustic short circuit between the offset acoustically active and transparent membranes 11 and 12 at.

Fig. 4 zeigt ein Bauelement 50 mit einer mikromechanischen Mikrofonstruktur, die erfindungsgemäß zwei übereinander angeordneten Membranen 51 und 52 umfasst, zwischen denen ein feststehendes Gegenelement 53 angeordnet ist. Die beiden Membranen 51 und 52 sind jeweils über eine Federaufhängung 31 bzw. 71 im Schichtaufbau des Bauelements 50 aufgehängt, um deren Auslenkung zu begünstigen. Wie auch im Falle des in Fig. 1 dargestellten Bauelements 10 ist die Membran 51 über Isolationsschichten 2 und 4 einerseits gegen das Substrat 1 und andererseits gegen das Gegenelement 53 elektrisch isoliert. Eine weitere Isolationsschicht 6 des Schichtaufbaus dient der elektrischen Isolation zwischen dem Gegenelement 53 und der Membran 52. Die beiden Membranen 51 und 52 sowie das Gegenelement 53 bestehen zumindest bereichsweise aus einem elektrisch leitfähigen Material, wie z.B. einem entsprechend dotierten Polysilizium. Auf diese Weise bildet die Membran 51 zusammen mit dem Gegenelement 53 eine erste Kapazität, während die Membran 52 zusammen mit dem Gegenelement 53 eine zweite Kapazität bildet. Fig. 4 shows a component 50 with a micromechanical microphone structure, the invention comprises two superposed membranes 51 and 52, between which a fixed counter-element 53 is arranged. The two membranes 51 and 52 are suspended in each case via a spring suspension 31 and 71 in the layer structure of the component 50 in order to favor their deflection. As in the case of in Fig. 1 illustrated component 10, the membrane 51 is electrically insulated via insulating layers 2 and 4 on the one hand against the substrate 1 and on the other hand against the counter element 53. A further insulation layer 6 of the layer structure serves for electrical insulation between the counter element 53 and the membrane 52. The two membranes 51 and 52 and the counter element 53 at least partially consist of an electrically conductive material, such as a correspondingly doped polysilicon. In this way, the membrane 51 together with the counter-element 53 forms a first capacitance, while the membrane 52 together with the counter-element 53 forms a second capacitance.

Das Gegenelement 53 ist hier deutlich dicker als die beiden Membranen 51 und 52 und weist erste Durchgangsöffnungen 531 auf, so dass es im Wesentlichen starr und akustisch transparent ist. Um zu erreichen, dass das Gegenelement deutlich weniger auf Schallwellen reagiert als die Membranen, kann das Gegenelement aber auch in einer dünneren Polysiliziumschicht realisiert werden, die steifer als die beiden Membranen im Schichtaufbau aufgehängt ist. Eine weitere Möglichkeit besteht darin, das Gegenelement in Form eines Schichtstapels aus Polysilizium und Oxid bzw. Nitrid zu realisieren, der unter Zugstress steht. Außerdem sind im Gegenelement 53 zweite Durchgangsöffnungen 532 für Verbindungsstege 55 ausgebildet, über die die beiden Membranen 51 und 52 mechanisch gekoppelt sind. Bei der hier beschriebenen Variante ist die erste Membran 51 weitgehend geschlossen und damit akustisch aktiv, während die gesamte Mikrofonfläche der zweiten Membran 52 mit Durchgangsöffnungen 521 versehen ist, so dass die zweite Membran 52 akustisch allenfalls gering aktiv ist. Die mechanische Kopplung zwischen den beiden Membranen 51 und 52 bewirkt jedoch, dass beide Membranen 51 und 52 gleichsinnig ausgelenkt werden, wenn die erste Membran 51 über die Schallöffnung 54 in der Bauteilrückseite mit Schalldruck beaufschlagt wird. Dementsprechend ändern sich die erste und zweite Kapazität, wie im Falle des Bauteils 10, gegensinnig. Die Auswertung erfolgt auch hier durch Differenzbildung zwischen der ersten und zweiten Kapazität.The counter-element 53 here is significantly thicker than the two membranes 51 and 52 and has first passage openings 531, so that it is substantially rigid and acoustically transparent. In order to achieve that the counter element reacts much less on sound waves than the membranes, but the counter element can also be realized in a thinner polysilicon layer, which is stiffer than the two membranes suspended in the layer structure. Another possibility is to realize the counter element in the form of a layer stack of polysilicon and oxide or nitride, which is under tensile stress. In addition, 53 second through holes 532 are formed for connecting webs 55 in the counter element, over which the two membranes 51 and 52 are mechanically coupled. In the variant described here, the first diaphragm 51 is largely closed and thus acoustically active, while the entire microphone surface of the second diaphragm 52 is provided with passage openings 521, so that the second diaphragm 52 is acoustically at most low active. The mechanical coupling between the two membranes 51 and 52, however, causes both membranes 51 and 52 are deflected in the same direction, when the first Membrane 51 is acted upon via the sound opening 54 in the back of the component with sound pressure. Accordingly, as in the case of the component 10, the first and second capacitances change in opposite directions. The evaluation is also done here by subtraction between the first and second capacity.

Claims (8)

Bauelement (10) mit einer mikromechanischen Mikrofonstruktur, mindestens umfassend - eine durch den Schalldruck auslenkbare erste Membran (11), die als auslenkbare Elektrode fungiert, - ein feststehendes akustisch durchlässiges Gegenelement (13), das als Gegenelektrode fungiert, und - eine weitere Kapazität zur Auswertung der Kapazitätsänderungen zwischen der ersten auslenkbaren Elektrode (11) und der Gegenelektrode (13); dadurch gekennzeichnet, dass das feststehende Gegenelement (13) zwischen der auslenkbaren ersten Membran (11) und einer zweiten Membran (12) angeordnet ist, dass das feststehende Gegenelement (13) auch als Elektrode der weiteren Kapazität fungiert und dass die zweite Membran (12) die zweite Elektrode der weiteren Kapazität bildet.Component (10) with a micromechanical microphone structure, at least comprising a sound pressure deflectable first diaphragm (11) acting as a deflectable electrode, - A fixed acoustically permeable counter element (13), which acts as a counter electrode, and - Another capacity for evaluating the capacitance changes between the first deflectable electrode (11) and the counter electrode (13); characterized in that the fixed counter-element (13) is arranged between the deflectable first diaphragm (11) and a second diaphragm (12), that the fixed counter-element (13) also acts as an electrode of the further capacitance and that the second diaphragm (12) the second electrode forms the further capacity. Bauelement nach Anspruch 1, dadurch gekennzeichnet, dass das feststehende Gegenelement und die zweite Membran mechanisch gekoppelt aber gegeneinander elektrisch isoliert sind, so dass sie eine konstante Referenzkapazität bilden.Component according to claim 1, characterized in that the fixed counter-element and the second membrane are mechanically coupled but electrically isolated from each other, so that they form a constant reference capacitance. Bauelement (10; 30; 40) nach Anspruch 1, dadurch gekennzeichnet, dass sich auch die weitere Kapazität unter Einwirkung des Schalldrucks verändert.Component (10; 30; 40) according to claim 1, characterized in that also changes the further capacity under the action of the sound pressure. Bauelement (50) nach Anspruch 3, dadurch gekennzeichnet, dass im wesentlichen nur eine der beiden Membranen (51) akustisch aktiv ist und dass die beiden Membranen (51, 52) mechanisch gekoppelt aber gegeneinander elektrisch isoliert sind.Component (50) according to claim 3, characterized in that substantially only one of the two membranes (51) is acoustically active and that the two membranes (51, 52) are mechanically coupled but are electrically isolated from each other. Bauelement (10) nach Anspruch 3, dadurch gekennzeichnet, dass beide Membranen (11, 12) in zueinander versetzten Teilbereichen akustisch aktiv und akustisch durchlässig ausgebildet sind, so dass beide Membranen (11, 12) bei Schalleinwirkung im Wesentlichen unabhängig voneinander ausgelenkt werden.Component (10) according to claim 3, characterized in that both membranes (11, 12) in mutually offset portions acoustically active and acoustically permeable, so that both membranes (11, 12) are deflected when sound substantially independent of each other. Bauelement nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass zumindest die dem Gegenelement zugewandten Membranoberflächen und/oder die Oberflächen des Gegenelements mit einer dielektrischen Beschichtung versehen sind.Component according to one of claims 1 to 5, characterized in that at least the counter-element facing membrane surfaces and / or the surfaces of the counter-element are provided with a dielectric coating. Bauelement (30) nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass die Mikrofonstruktur einen Überlastschutz in Form von Anschlägen (122, 132) umfasst, die in der dem Gegenelement (13) zugewandten Oberfläche einer auslenkbaren Membran (12) und/oder in der einer auslenkbaren Membran (11) zugewandten Oberfläche des Gegenelements (13) ausgebildet sind.Component (30) according to one of claims 1 to 6, characterized in that the microphone structure comprises an overload protection in the form of stops (122, 132), in the counter-element (13) facing surface of a deflectable membrane (12) and / or in which a deflectable membrane (11) facing surface of the counter-element (13) are formed. Verfahren zur Herstellung eines Bauelements mit einer mikromechanischen Mikrofonstruktur, insbesondere zur Herstellung eines Bauelements (10) nach einem der Ansprüche 1 bis 7, bei dem die Membranstruktur im Schichtaufbau über einem Substrat (1) realisiert wird, indem - auf die Substratoberfläche eine erste elektrisch isolierende Opferschicht (2) aufgebracht und strukturiert wird, - über der ersten Opferschicht (2) eine erste zumindest bereichsweise elektrisch leitfähige Membranschicht (3) erzeugt und strukturiert wird, - über der ersten Membranschicht (3) eine zweite elektrisch isolierende Opferschicht (4) aufgebracht und strukturiert wird, - über der zweiten Opferschicht (4) eine zumindest bereichsweise elektrisch leitfähige Schicht (5) zur Realisierung eines feststehenden Gegenelements (13) erzeugt wird, - über der Schicht (5) eine dritte elektrisch isolierende Opferschicht (6) aufgebracht und strukturiert wird, - über der dritten Opferschicht (6) eine zweite zumindest bereichsweise elektrisch leitfähige Membranschicht (7) erzeugt und strukturiert wird, - in einem Vorder- und/oder Rückseiten-Trenchprozess die Schicht (5) strukturiert wird und Ätzzugänge zu der ersten, der zweiten und der dritten Opferschicht (2, 4, 6) erzeugt werden und - die erste, die zweite und die dritte Opferschicht (2, 4, 6) bereichsweise entfernt werden, um eine erste Membran (11) in der ersten Membranschicht (3), ein Gegenelement (13) in der Schicht (5) und eine zweite Membran (12) in der zweiten Membranschicht (7) freizulegen. Method for producing a component having a micromechanical microphone structure, in particular for producing a component (10) according to one of Claims 1 to 7, in which the membrane structure is realized in layer construction over a substrate (1) by a first electrically insulating sacrificial layer (2) is applied to the substrate surface and structured, a first at least partially electrically conductive membrane layer (3) is produced and structured over the first sacrificial layer (2), a second electrically insulating sacrificial layer (4) is applied and structured over the first membrane layer (3), an at least partially electrically conductive layer (5) is produced over the second sacrificial layer (4) to realize a fixed counter element (13), a third electrically insulating sacrificial layer (6) is applied and structured over the layer (5), a second, at least partially, electrically conductive membrane layer (7) is produced and structured over the third sacrificial layer (6), in a front and / or backside trench process, the layer (5) is patterned and etch accesses to the first, second and third sacrificial layers (2, 4, 6) are produced and - The first, the second and the third sacrificial layer (2, 4, 6) are partially removed to a first membrane (11) in the first membrane layer (3), a counter element (13) in the layer (5) and a second Expose membrane (12) in the second membrane layer (7).
EP09177681.5A 2009-01-07 2009-12-02 Component with a micromechanical microphone structure Active EP2207364B1 (en)

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WO2020097524A1 (en) * 2018-11-09 2020-05-14 Knowles Electronics, Llc Acoustic transducer with reduced damping

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DE102019123077B4 (en) * 2019-08-28 2021-05-27 Tdk Corporation Process for the production of a robust double diaphragm microphone
DE102023203446A1 (en) 2023-04-17 2024-10-17 Robert Bosch Gesellschaft mit beschränkter Haftung Microelectromechanical acoustic component

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WO2020097524A1 (en) * 2018-11-09 2020-05-14 Knowles Electronics, Llc Acoustic transducer with reduced damping
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CN109195075B (en) * 2018-11-29 2024-04-12 华景科技无锡有限公司 Microphone vibrating diaphragm and microphone

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