EP2141968A2 - Device for generating an atmospheric pressure plasma - Google Patents
Device for generating an atmospheric pressure plasma Download PDFInfo
- Publication number
- EP2141968A2 EP2141968A2 EP20090006430 EP09006430A EP2141968A2 EP 2141968 A2 EP2141968 A2 EP 2141968A2 EP 20090006430 EP20090006430 EP 20090006430 EP 09006430 A EP09006430 A EP 09006430A EP 2141968 A2 EP2141968 A2 EP 2141968A2
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- Prior art keywords
- housing
- piezoelectric element
- end cap
- region
- frequency
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2475—Generating plasma using acoustic pressure discharges
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2475—Generating plasma using acoustic pressure discharges
- H05H1/2481—Generating plasma using acoustic pressure discharges the plasma being activated using piezoelectric actuators
Definitions
- the present invention relates to an apparatus for generating an atmospheric pressure plasma.
- Plasma also known as the "fourth state of matter" is created by continuously supplying energy to a gaseous system until it independently forms large quantities of free electrons. This activates some neutral atoms or molecules of the gas in the system to develop negatively charged electrons, positively or negatively charged ions, and other species.
- the high energy efficiency of plasmas allows to drive application processes that are difficult or even impossible during the commonly known states of matter.
- "cold" plasma in which the neutral gas temperature is relatively low and preferably moves in the room temperature range, to treat the surfaces of thermally sensitive substrates or to change them chemically-physically.
- Surface treatment in this context is understood to mean a process in which the surface of a substrate is conditioned by means of plasma, activated or otherwise modified or cleaned by the plasma.
- Such surface treatment by means of plasma is required, for example, in the case of many thermoplastics, but also in other thermally sensitive substrates whose surfaces have a very low surface energy, so that wetting with a liquid having a higher surface tension is made more difficult. As a result, it comes to the beading of the liquid and thus also to a poor structure of a bond strength such.
- B. to adhesives Decisive for a successful surface treatment is not to damage the surfaces of substrates unintentionally, such.
- B. weaken the material strength or toughness. It must be prevented that the surface of the substrates due to excessive thermal effects on or melted or it comes to other unintentional chemical reactions.
- "cold" plasma is suitable for this purpose.
- a generic device for generating an atmospheric pressure plasma is from the non-prepublished German priority application DE 10 2008 018 827.1-54 the applicant known.
- a device is described in which within a dielectrically insulated housing wall, a piezoelectric element with a primary and at least a perpendicular polarized secondary region is arranged.
- the primary region of the piezoelectric element is driven with low voltage and high frequency, as a result of which a plasma is formed on the surface of the secondary region due to the field elevation.
- This generated at the secondary region of the piezoelectric element plasma is forced by an additionally provided counter electrode, which is at ground potential, to an arc discharge and blown by means of a working gas at the frontal opening of the discharge tube.
- the inventive device has for this purpose a drive board, which consists of a frequency and voltage converter and a control loop, which controls the behavior of the monitored piezoceramic element and readjust the optimum operating point in case of deviations.
- the optimum operating point is understood to be the resonance case of the system, ie the phase equality of current and voltage, in which the piezoelectric element used has its highest conductivity.
- the piezoelement also has the highest conversion efficiency of low voltage coupled on the primary side to the high voltage converted on the secondary side and thus the strongest field boost.
- the strong field elevation is the decisive moment for a deliberately efficient plasma education.
- the optimum operating point is decisively influenced by the already mentioned temperature development of the piezoelectric element during the operation of the device.
- a drive circuit board which measures the admittance, ie the quotient of current and voltage, and adjusts the device via the control of the frequency to the resonance case. At this point, the value of the admittance assumes its maximum, so that a targeted regulation of the phase, a setting of the device in the resonance case is possible.
- phase-locked loop the so-called phase-locked loop, hereinafter referred to as PLL proven.
- a phase detector provides for the automatic tuning of an oscillator.
- the control circuit with phase detector in the PLL ensures an in-phase signal.
- the frequency of the output signal of the PLL (oscillator output) runs, unless otherwise connected, with the same frequency as the reference signal. If a division ratio "n" is established between the oscillator output and the comparator input, the output signal of the oscillator is still phase-locked, but with the n-fold frequency of the reference signal.
- the frequency of a free-running voltage-controlled oscillator is divided down by a (usually adjustable) divider in the frequency range of the comparison frequency.
- phase difference between the frequency derived from the oscillator and a second, mostly quartz-controlled, highly constant comparison frequency is determined in a phase comparator and fed back to the oscillator as a control voltage.
- the frequency of the oscillator is controlled exactly to the multiple of the comparison frequency set in the divider.
- the piezoelectric element used is arranged by means of a clamping connection detachably in a dielectric region of a housing, so that it can be easily replaced with decreasing conversion efficiency due to aging phenomena.
- FIG. 1 shows an assembly drawing of a device according to the invention for generating an atmospheric pressure plasma in a side sectional view with a preferably rotationally symmetrical housing 1, which has at its front end an outlet opening 2, which is formed by an electrically insulating end cap 3.
- a connectable to a gas line 5 gas inlet opening 4 and a supply line 6 is provided for a power supply of the device, wherein both lines open in a power supply device 7.
- the power supply device 6 is shown only schematically and shown for the sake of completeness, but is not claimed.
- the supply line 6 is conductively connected to a control board 8 arranged in the interior of the housing 1.
- a pushbutton 9 is additionally provided, which is contacted with the control circuit board 8 and by means of which both the gas flow and the power supply of the device can be connected via the power supply device 7.
- the gas stream is introduced into the housing 1 via the gas inlet opening 4, such that it flows past the control board 8 positioned within the housing 1 in the direction of the arrow and cools the latter, before it is transferred to its intended state of aggregation, namely plasmas.
- the control and regulation of the power of the device described above is inventively from the drive board 8, comprising a frequency and voltage converter and a control loop taken.
- the components on the drive board 8 are soldered and connected to each other via interconnects.
- a preferably cuboidal piezoelectric element 10 is arranged with a primary region and at least one secondary region polarized perpendicular thereto and connected thereto by way of non-illustrated electrical lines.
- the piezoelectric element 10 is preferably held detachably and centrally in the interior of the dielectric end cap 3 by a clamping connection 11. Described in more detail, the clamping connection 11 in the comments too FIG.
- the piezoelectric element 10 is subjected to low voltage, preferably from 5 to 200 V, in the primary region, so that a surface discharge on the surface, which is blown out through the outlet opening 2 by means of the gas flow, subsequently develops in the secondary region.
- low voltage preferably from 5 to 200 V
- argon, helium or even oxygen can be used as gas types.
- FIG. 2a shows a clamp connection 11, consisting of two half-shells 12a and b, which receive the piezoelectric element 10 releasably and centrally via connecting screws 13a and b. Via two further screws 14 a and b, the clamping connection 11 together with the centrally positioned piezoelectric element 10 can be fixed to the dielectric end cap 3. Since vibrations occur in the piezoelectric element 10 during operation of the device, it is particularly preferably fixed in a point of oscillation between the two half-shells 12a and b in such a way that the piezoelectric element 10 is held in the most stable position possible. By using screws to connect the items from FIG.
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Acoustics & Sound (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Abstract
Description
Die vorliegende Erfindung betrifft eine Vorrichtung zur Erzeugung eines Atmosphärendruck-Plasmas.The present invention relates to an apparatus for generating an atmospheric pressure plasma.
Plasma, auch bekannt als der "vierte Aggregatszustand", entsteht, wenn man einem gasförmigen System kontinuierlich Energie zuführt, bis sich eigenständig große Mengen an freien Elektronen bilden. Dadurch werden in dem System einige neutrale Atome oder Moleküle des Gases aktiviert, um negativ geladene Elektronen, positiv oder negativ geladene Ionen und andere Spezies zu entwickeln. Der hohe wirksame Energiehaushalt von Plasmen erlaubt es, Anwendungsprozesse zu fahren, die während der üblich bekannten Zustände von Materie schwierig oder gar unmöglich sind. Insbesondere eignet sich "kaltes" Plasma, bei dem die Neutralgastemperatur relativ gering ist und sich dabei bevorzugt im Zimmertemperaturbereich bewegt, die Oberflächen von thermisch empfindlichen Substraten zu behandeln bzw. diese chemisch-physikalisch zu verändern.Plasma, also known as the "fourth state of matter", is created by continuously supplying energy to a gaseous system until it independently forms large quantities of free electrons. This activates some neutral atoms or molecules of the gas in the system to develop negatively charged electrons, positively or negatively charged ions, and other species. The high energy efficiency of plasmas allows to drive application processes that are difficult or even impossible during the commonly known states of matter. In particular, "cold" plasma, in which the neutral gas temperature is relatively low and preferably moves in the room temperature range, to treat the surfaces of thermally sensitive substrates or to change them chemically-physically.
Unter Oberflächenbehandlung wird in diesem Zusammenhang ein Prozess verstanden, bei dem die Oberfläche eines Substrats mittels Plasma konditioniert, aktiviert oder in sonstiger Weise durch das Plasma modifiziert oder gereinigt wird. Erforderlich ist eine derartige Oberflächenbehandlung mittels Plasma beispielsweise bei vielen thermoplastischen Kunststoffen, aber auch bei anderen thermisch sensiblen Substraten, deren Oberflächen eine sehr geringe Oberflächenenergie aufweisen, so dass eine Benetzung mit einer Flüssigkeit mit höherer Oberflächenspannung erschwert wird. In Folge dessen kommt es zum Abperlen der Flüssigkeit und somit auch zu einem schlechten Aufbau einer Verbundfestigkeit wie z. B. zu Klebstoffen. Entscheidend für eine erfolgreiche Oberflächenbehandlung ist es, die Oberflächen von Substraten nicht ungewollt zu schädigen, so z. B. die Materialfestigkeit oder Zähigkeit zu schwächen. Dabei muss verhindert werden, dass die Oberfläche der Substrate auf Grund von zu hohen thermischen Einwirkungen an- oder aufgeschmolzen wird oder es zu sonstigen unbeabsichtigten chemischen Reaktionen kommt. Dazu eignet sich insbesondere "kaltes" Plasma.Surface treatment in this context is understood to mean a process in which the surface of a substrate is conditioned by means of plasma, activated or otherwise modified or cleaned by the plasma. Such surface treatment by means of plasma is required, for example, in the case of many thermoplastics, but also in other thermally sensitive substrates whose surfaces have a very low surface energy, so that wetting with a liquid having a higher surface tension is made more difficult. As a result, it comes to the beading of the liquid and thus also to a poor structure of a bond strength such. B. to adhesives. Decisive for a successful surface treatment is not to damage the surfaces of substrates unintentionally, such. B. weaken the material strength or toughness. It must be prevented that the surface of the substrates due to excessive thermal effects on or melted or it comes to other unintentional chemical reactions. In particular, "cold" plasma is suitable for this purpose.
Eine gattungsgemäße Vorrichtung zur Erzeugung eines Atmosphärendruck-Plasmas ist aus der nicht vorveröffentlichten deutschen Prioritätsanmeldung
Verantwortlich für die Ausbildung eines Plasmas an dem Piezoelement ist der piezoelektrische Effekt mit seinen spezifisch physikalischen Eigenschaften. Dabei hat sich gezeigt, dass die beim genannten Stand der Technik verwendeten Piezokeramiken extrem temperaturabhängig sind. Bereits bei einer Abweichung von +/- 2°C wird der optimale Betriebspunkt deutlich verfehlt, wodurch sich die maximale Leistung der bekannten Vorrichtung um mehr als 10% verringert. Bei der bekannten Vorrichtung sind keine Maßnahmen vorgesehen, die diesem Effekt entgegenwirken.Responsible for the formation of a plasma on the piezoelectric element is the piezoelectric effect with its specific physical properties. It has been shown that the piezoceramics used in the cited prior art are extremely temperature-dependent. Even at a deviation of +/- 2 ° C, the optimum operating point is clearly missed, which reduces the maximum power of the known device by more than 10%. In the known device, no measures are provided which counteract this effect.
Weiterhin unterliegt die Polarisation der piezokeramischen Elemente der bekannten Vorrichtung einem nicht vernachlässigbaren Alterungsprozess, der sich mit steigender Betriebsdauer durch eine negative Wandlungseffizienz bemerkbar macht. Dieser Effekt ist nicht wünschenswert und beeinflusst ungewollt die erzielbaren Behandlungsergebnisse der Plasmabehandlung.Furthermore, the polarization of the piezoceramic elements of the known device is subject to a non-negligible aging process, which manifests itself with increasing operating time by a negative conversion efficiency. This effect is undesirable and unintentionally influences the achievable treatment results of the plasma treatment.
Aufgabe der Erfindung ist es, eine Vorrichtung zur Erzeugung eines Atmosphärendruck-Plasmas der eingangs genannten Art bereit zu stellen, bei der es während des Betriebes, trotz auftretender Temperaturschwankungen, zu keinen Leistungsverlusten im verwendeten Piezoelement kommt. Weiterhin ist es eine Aufgabe der Erfindung, eine baulich einfache und betriebsmäßig sichere Lösung dafür zu finden, die auch bei steigender Betriebsdauer eine annähernd gleichbleibend hohe Wandlungseffizienz der Piezoelemente sichert.The object of the invention is to provide a device for generating an atmospheric pressure plasma of the type mentioned, in which there is no power losses in the piezoelectric element used during operation, despite occurring temperature fluctuations. Furthermore, it is an object of the invention to find a structurally simple and operationally safe solution for it, which ensures an approximately constant high conversion efficiency of the piezo elements even with increasing operating time.
Diese Aufgabe wird durch eine Vorrichtung zur Erzeugung eines Atmosphärendruck-Plasmas mit den Merkmalen des ersten Schutzanspruches gelöst. Die Unteransprüche betreffen besonders vorteilhaft Weiterbildungen der Erfindung.This object is achieved by a device for generating an atmospheric pressure plasma with the features of the first protection claim. The dependent claims relate particularly advantageous developments of the invention.
Die erfindungsgemäße Vorrichtung weist dafür eine Ansteuerplatine auf, die aus einem Frequenz- und Spannungswandler sowie einem Regelkreis besteht, die das Verhalten des piezokeramischen Elements überwacht und den optimalen Betriebspunkt bei Abweichungen nachregelt.The inventive device has for this purpose a drive board, which consists of a frequency and voltage converter and a control loop, which controls the behavior of the monitored piezoceramic element and readjust the optimum operating point in case of deviations.
Unter dem optimalen Betriebspunkt wird in diesem Zusammenhang der Resonanzfall des Systems, also die Phasengleichheit von Strom und Spannung verstanden, in dem das verwendete Piezoelement seine höchste Leitfähigkeit besitzt. Gleichzeitig hat das Piezoelement hier auch die höchste Wandlungseffizienz von an der Primärseite eingekoppelter Niederspannung zur sekundärseitig gewandelten Hochspannung und damit die stärkste Feldüberhöhung. Die starke Feldüberhöhung wiederum ist das ausschlaggebende Moment für eine gewollt effiziente Plasmaausbildung. Maßgeblich beeinflusst wird der optimale Betriebspunkt jedoch von der bereits erwähnten Temperaturentwicklung des Piezoelements während des Betriebs der Vorrichtung. Um diesem Effekt entgegenwirken, wird daher erfindungsgemäß eine Ansteuerplatine vorgeschlagen, die die Admittanz, also den Quotienten aus Strom und Spannung misst und die Vorrichtung über die Steuerung der Frequenz in den Resonanzfall nachregelt. In diesem Punkt nimmt der Wert der Admittanz sein Maximum an, so dass über eine gezielte Regelung der Phase eine Einstellung der Vorrichtung in den Resonanzfall möglich ist.In this context, the optimum operating point is understood to be the resonance case of the system, ie the phase equality of current and voltage, in which the piezoelectric element used has its highest conductivity. At the same time, the piezoelement also has the highest conversion efficiency of low voltage coupled on the primary side to the high voltage converted on the secondary side and thus the strongest field boost. The strong field elevation, in turn, is the decisive moment for a deliberately efficient plasma education. However, the optimum operating point is decisively influenced by the already mentioned temperature development of the piezoelectric element during the operation of the device. In order to counteract this effect, a drive circuit board is therefore proposed according to the invention, which measures the admittance, ie the quotient of current and voltage, and adjusts the device via the control of the frequency to the resonance case. At this point, the value of the admittance assumes its maximum, so that a targeted regulation of the phase, a setting of the device in the resonance case is possible.
Als besonders geeignet hat sich die Phase-locked loop, der sogenannte Phasenregelkreis, nachfolgend mit PLL bezeichnet, erwiesen. Bei der PLL sorgt ein Phasendetektor für die automatische Abstimmung eines Oszillators. Der Regelkreis mit Phasendetektor in der PLL sorgt dabei für ein phasengleiches Signal. Die Frequenz des Ausgangssignals der PLL (Oszillator-Ausgang) läuft, sofern nicht anders beschaltet, mit der gleichen Frequenz wie das Referenzsignal. Stellt man zwischen dem Oszillator-Ausgang und dem Komparator-Eingang ein Teilungsverhältnis "n" her, so läuft das Ausgangssignal des Oszillator zwar immer noch phasenstarr, aber mit der n-fachen Frequenz des Referenzsignals. Die Frequenz eines freilaufenden spannungsgeregelten Oszillators wird durch einen (i. A. einstellbaren) Teiler in den Frequenzbereich der Vergleichsfrequenz heruntergeteilt. Der Phasenunterschied zwischen der vom Oszillator abgeleiteten Frequenz und einer zweiten, meist quarzgesteuerten, hoch konstanten Vergleichsfrequenz, wird in einem Phasenkomparator ermittelt und als Regelspannung wieder dem Oszillator zugeführt. Dadurch wird die Frequenz des Oszillators exakt auf das im Teiler eingestellte Vielfache der Vergleichsfrequenz geregelt.Particularly suitable is the phase-locked loop, the so-called phase-locked loop, hereinafter referred to as PLL proven. In the PLL, a phase detector provides for the automatic tuning of an oscillator. The control circuit with phase detector in the PLL ensures an in-phase signal. The frequency of the output signal of the PLL (oscillator output) runs, unless otherwise connected, with the same frequency as the reference signal. If a division ratio "n" is established between the oscillator output and the comparator input, the output signal of the oscillator is still phase-locked, but with the n-fold frequency of the reference signal. The frequency of a free-running voltage-controlled oscillator is divided down by a (usually adjustable) divider in the frequency range of the comparison frequency. The phase difference between the frequency derived from the oscillator and a second, mostly quartz-controlled, highly constant comparison frequency is determined in a phase comparator and fed back to the oscillator as a control voltage. As a result, the frequency of the oscillator is controlled exactly to the multiple of the comparison frequency set in the divider.
Durch das Hochmultiplizieren der Vergleichsfrequenz wird dem Ausgangssignal der PLL allerdings eine Rauschkomponente hinzugefügt, da nicht nur die Frequenz, sondern auch die Schwankungen der Frequenz multipliziert werden. Diese Rauschkomponente ist meist unerwünscht. Die Güte einer PLL bemisst sich deshalb insbesondere an der spektralen Reinheit und der Rauscharmut der Ausgangsfrequenz.However, by multiplying the comparison frequency by a high level, a noise component is added to the output signal of the PLL since not only the frequency but also the frequency fluctuation is multiplied. This noise component is usually undesirable. The quality of a PLL is therefore measured in particular by the spectral purity and the low noise of the output frequency.
Die Arbeitsweise einer PLL lässt sich daher vereinfacht wie folgt beschreiben:
- ∘ Vorgabe einstellen
- ∘ Einstellung prüfen
- ∘ ist die Einstellung ungenau, wird nachgeregelt - anderenfalls nicht
- ∘ Kreislauf beginnt von neuem
- Einstellen Set the default
- ∘ Check setting
- ∘ if the setting is inaccurate, readjusted - otherwise not
- ∘ The cycle starts again
Wenn die Oszillator-Frequenz von der Referenz abweicht, wird im Komparator ein Fehlersignal erzeugt, das den Oszillator nachregelt. Dabei wird die Frequenz wegen der unvermeidlichen Laufzeit in den Schaltungsbausteinen über das Ziel hinausschwingen. Folge ist, dass die Oszillator-Frequenz nun in der anderen Richtung ein kleines Stück abweicht. Deshalb muss die Frequenz wieder nachgeregelt werden. Wenn das Nachregeln in sehr schneller Folge vorgenommen wird, kann es durch Laufzeiten zu einer Phasenverschiebung der Regelspannung kommen, wodurch sich die Gegenkopplung in eine Mitkopplung verwandelt und der Regler zu schwingen beginnt. Daher muss eine Frequenzkompensation durch einen Tiefpass (RC-Glied) erfolgen, was jedoch zu einer Verzögerung des Regeleinsatzes führt. Damit wird ein von der Dimensionierung des Tiefpasses abhängiger Toleranzbereich eingefügt.If the oscillator frequency deviates from the reference, an error signal is generated in the comparator, which adjusts the oscillator. The frequency will swing beyond the target due to the unavoidable running time in the circuit blocks. The result is that the oscillator frequency deviates a little bit in the other direction. Therefore, the frequency must be readjusted. If the readjustment is carried out in a very fast sequence, it can lead to a phase shift of the control voltage by running times, whereby the negative feedback is transformed into a positive feedback and the controller starts to oscillate. Therefore, a frequency compensation by a low-pass (RC element) must be done, which, however, leads to a delay of the rule use. This inserts a tolerance range dependent on the dimensioning of the low-pass filter.
Nach einem weiteren Merkmal der Erfindung ist das verwendete Piezoelement mittels einer Klemmverbindung lösbar in einem dielektrischen Bereich eines Gehäuse angeordnet, so dass es bei sinkender Wandlungseffizienz auf Grund von Alterungserscheinungen einfach ausgewechselt werden kann.According to a further feature of the invention, the piezoelectric element used is arranged by means of a clamping connection detachably in a dielectric region of a housing, so that it can be easily replaced with decreasing conversion efficiency due to aging phenomena.
Nach einer bevorzugten Ausführungsform der Erfindung wird die Ansteuerplatine in unmittelbarer Nähe zum Piezoelement, beispielsweise im Gehäuse der erfindungsgemäßen Vorrichtung, angeordnet. Durch die hohe eingekoppelte Frequenz wirken verwendete Verbindungsleitungen wie Antennen, die elektromagnetische Wellen abstrahlen und somit die nutzbare elektrische Leistung reduzieren. Durch die räumliche Nähe der Ansteuerplatine zum Piezoelement sind kurze Verbindungsleitungen möglich, in denen nur mehr eine vernachlässigbare Verlustleistung bei Ansteuerung des Piezoelements mit Hochfrequenz auftritt.According to a preferred embodiment of the invention, the drive board in the immediate vicinity of the piezoelectric element, for example, in the housing of the device according to the invention arranged. Due to the high coupled frequency, used connecting lines act as antennas that emit electromagnetic waves and thus reduce the usable electrical power. Due to the spatial proximity of the control board to the piezoelectric element short connecting lines are possible in which only more one Negligible power loss occurs when controlling the piezoelectric element with high frequency.
Die Erfindung soll nachstehend an Hand von Zeichnungen noch beispielhaft näher erläutert werden:The invention will be explained in more detail below with reference to drawings, by way of example:
Die Figuren zeigen:
- Fig.1
- eine Zusammenstellungszeichnung einer erfindungsgemäßen Vorrichtung zur Erzeugung eines Atmosphärendruck-Plasmas in seitlicher Schnittdarstellung
- Fig. 2a und b
- einen Ausschnitt einer erfindungsgemäßen Vorrichtung zur Erzeugung eines Atmosphärendruck-Plasmas
- Fig.3
- einen Ausschnitt einen weiteren Ausführungsform einer erfindungsgemäßen Vorrichtung zur Erzeugung eines Atmosphärendruck-Plasmas.
- Fig.1
- an assembly drawing of a device according to the invention for generating an atmospheric pressure plasma in a side sectional view
- Fig. 2a and b
- a detail of a device according to the invention for generating an atmospheric pressure plasma
- Figure 3
- a detail of another embodiment of a device according to the invention for generating an atmospheric pressure plasma.
Die
Abweichend der
Claims (5)
aufweisend ein Gehäuse (1) mit einer dielektrischen Endkappe (3),
wobei innerhalb des Gehäuses (1), im Bereich der Endkappe (3), ein sich in Längsrichtung des Gehäuses (1) erstreckendes Piezoelement (10) mit einem Primärbereich und mindestens einem dazu senkrecht polarisierten Sekundärbereich angeordnet ist,
wobei eine stirnseitige Austrittsöffnung (2) des Gehäuses (1) von der Endkappe (3) gebildet wird,
wobei an der der Austrittsöffnung (2) abgewandten Seite des Gehäuses (1) eine Gaseintrittsöffnung (4) vorgesehen ist,
wobei an dem Piezoelement (10) eine Wechselspannung angelegt wird,
wobei das Piezoelement (10) mittels einer Klemmverbindung (11) lösbar im Bereich der Endkappe (3) befestigt ist,
und wobei innerhalb des Gehäuses (1) eine Ansteuerplatine (8) mit einem Phasenregelkreis vorgesehen ist, derart, dass das Piezoelement (10) damit steuer- und regelbar ist.Apparatus for generating an atmospheric pressure plasma,
comprising a housing (1) with a dielectric end cap (3),
wherein within the housing (1), in the region of the end cap (3), a piezoelement (10) extending in the longitudinal direction of the housing (1) is arranged with a primary region and at least one secondary region polarized perpendicular thereto,
wherein an end-side outlet opening (2) of the housing (1) is formed by the end cap (3),
wherein a gas inlet opening (4) is provided on the side of the housing (1) facing away from the outlet opening (2),
wherein an alternating voltage is applied to the piezoelectric element (10),
wherein the piezoelectric element (10) is fastened detachably in the region of the end cap (3) by means of a clamping connection (11),
and wherein within the housing (1) a drive circuit board (8) is provided with a phase locked loop, such that the piezoelectric element (10) is thus controllable and controllable.
dadurch gekennzeichnet,
dass die Klemmverbindung (11) aus zwei Halbschalen (12a und b) mit einer vorzugsweise zentrischen Aufnahme für das Piezoelement gebildet wird.Device according to claim 1,
characterized,
that the clamping connection (11) consists of two half-shells (12a, b) is formed with a preferably central recess for the piezo element.
dadurch gekennzeichnet,
dass die Klemmverbindung (11) als Federklemme (15a und b) ausgebildet ist.Apparatus according to claim 1 or 2,
characterized,
in that the clamping connection (11) is designed as a spring clamp (15a and b).
dadurch gekennzeichnet,
dass die Ansteuerplatine (8) in unmittelbarer Nähe zum Piezoelement (10) positioniert wird.Device according to one of claims 1 to 3,
characterized,
that the control board (8) in close proximity to the piezoelectric element (10) is positioned.
dadurch gekennzeichnet,
dass im Bereich der Ansteuerplatine (8) ein Taster (9) vorgesehen ist, mittels dem sowohl der Gasstrom, als auch die Leistungsversorgung beschaltet werden.Device according to one of claims 1 to 4,
characterized,
that a switch (9) is provided in the area of the control board (8), be connected by means of which both the gas stream and the power supply.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL09006430T PL2141968T3 (en) | 2008-07-04 | 2009-05-13 | Device for generating an atmospheric pressure plasma |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE202008008980U DE202008008980U1 (en) | 2008-07-04 | 2008-07-04 | Apparatus for generating an atmospheric pressure plasma |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2141968A2 true EP2141968A2 (en) | 2010-01-06 |
EP2141968A3 EP2141968A3 (en) | 2014-01-22 |
EP2141968B1 EP2141968B1 (en) | 2016-07-13 |
Family
ID=39736799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP09006430.4A Active EP2141968B1 (en) | 2008-07-04 | 2009-05-13 | Device for generating an atmospheric pressure plasma |
Country Status (3)
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---|---|
EP (1) | EP2141968B1 (en) |
DE (1) | DE202008008980U1 (en) |
PL (1) | PL2141968T3 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102010027795A1 (en) | 2010-04-15 | 2011-10-20 | BSH Bosch und Siemens Hausgeräte GmbH | Domestic appliance with plasma generator and method for its operation |
CN105103319A (en) * | 2013-01-22 | 2015-11-25 | 瑞莱昂等离子有限公司 | Apparatus for producing a plasma and hand-held device having the apparatus |
CN108604631A (en) * | 2016-02-15 | 2018-09-28 | 埃普科斯股份有限公司 | device for generating atmospheric pressure plasma |
KR20180116329A (en) * | 2016-03-11 | 2018-10-24 | 에프코스 아게 | Non-thermal atmospheric pressure - apparatus and method for generating plasma |
DE102019106767A1 (en) * | 2019-03-18 | 2020-09-24 | Relyon Plasma Gmbh | Arrangement for decontaminating a surface of objects and method for decontaminating a surface of objects |
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DE102012104137A1 (en) * | 2012-05-11 | 2013-11-14 | Maschinenfabrik Reinhausen Gmbh | Field controlled composite insulator e.g. rod, has core, shielding sheath and field control layer that is applied by plasma coating to core, where dielectric properties are controlled by geometric structure of field-control layer |
DE102013107448B4 (en) * | 2013-07-15 | 2016-11-24 | Relyon Plasma Gmbh | Arrangement for germ reduction by means of plasma |
DE102013113941B4 (en) | 2013-12-12 | 2015-07-23 | Reinhausen Plasma Gmbh | Arrangement for the treatment of wounds |
DE102015204753A1 (en) | 2015-03-17 | 2016-10-20 | Tesa Se | Low-temperature plasma treatment |
DE102017105430A1 (en) | 2017-03-14 | 2018-09-20 | Epcos Ag | Apparatus for generating a non-thermal atmospheric pressure plasma and effective space |
DE102020100823B4 (en) * | 2020-01-15 | 2021-10-14 | Nova Plasma Ltd | Device for generating a plasma and method for carrying out a plasma treatment |
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JP2004237135A (en) * | 2003-02-03 | 2004-08-26 | Nissan Motor Co Ltd | Catalyst element and exhaust gas cleaner using the same |
DE102005032890A1 (en) * | 2005-07-14 | 2007-01-18 | Je Plasmaconsult Gmbh | Apparatus for generating atmospheric pressure plasmas |
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DE102008018827B4 (en) | 2008-04-15 | 2010-05-12 | Maschinenfabrik Reinhausen Gmbh | Apparatus for generating an atmospheric pressure plasma |
-
2008
- 2008-07-04 DE DE202008008980U patent/DE202008008980U1/en not_active Expired - Lifetime
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2009
- 2009-05-13 PL PL09006430T patent/PL2141968T3/en unknown
- 2009-05-13 EP EP09006430.4A patent/EP2141968B1/en active Active
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JP2004237135A (en) * | 2003-02-03 | 2004-08-26 | Nissan Motor Co Ltd | Catalyst element and exhaust gas cleaner using the same |
DE102005032890A1 (en) * | 2005-07-14 | 2007-01-18 | Je Plasmaconsult Gmbh | Apparatus for generating atmospheric pressure plasmas |
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TERANISHI K ET AL: "A novel generation method of dielectric barrier discharge and ozone production using a piezoelectric transformer", JAPANESE JOURNAL OF APPLIED PHYSICS, THE JAPAN SOCIETY OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO; JP, Bd. 43, Nr. 9B, 1. September 2004 (2004-09-01), Seiten 6733-6739, XP002432140, ISSN: 0021-4922, DOI: 10.1143/JJAP.43.6733 * |
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Publication number | Priority date | Publication date | Assignee | Title |
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DE102010027795A1 (en) | 2010-04-15 | 2011-10-20 | BSH Bosch und Siemens Hausgeräte GmbH | Domestic appliance with plasma generator and method for its operation |
WO2011141263A1 (en) | 2010-04-15 | 2011-11-17 | BSH Bosch und Siemens Hausgeräte GmbH | Domestic appliance having a plasma generator and method for the operation thereof |
CN102970913A (en) * | 2010-04-15 | 2013-03-13 | Bsh博世和西门子家用电器有限公司 | Domestic appliance having a plasma generator and method for the operation thereof |
CN102970913B (en) * | 2010-04-15 | 2015-04-08 | Bsh博世和西门子家用电器有限公司 | Domestic appliance having a plasma generator and method for the operation thereof |
CN105103319B (en) * | 2013-01-22 | 2018-03-16 | 瑞莱昂等离子有限公司 | Produce the device of plasma and the handheld device with the device |
JP2016510483A (en) * | 2013-01-22 | 2016-04-07 | レリオン プラズマ ゲーエムベーハー | Plasma generator and portable device including plasma generator |
CN105103319A (en) * | 2013-01-22 | 2015-11-25 | 瑞莱昂等离子有限公司 | Apparatus for producing a plasma and hand-held device having the apparatus |
CN108604631A (en) * | 2016-02-15 | 2018-09-28 | 埃普科斯股份有限公司 | device for generating atmospheric pressure plasma |
US10531552B2 (en) | 2016-02-15 | 2020-01-07 | Epcos Ag | Device for generating an atmospheric-pressure plasma |
US10856399B2 (en) | 2016-02-15 | 2020-12-01 | Epcos Ag | Device for generating an atmospheric-pressure plasma |
CN108604631B (en) * | 2016-02-15 | 2022-01-04 | 埃普科斯股份有限公司 | Apparatus for generating atmospheric pressure plasma |
KR20180116329A (en) * | 2016-03-11 | 2018-10-24 | 에프코스 아게 | Non-thermal atmospheric pressure - apparatus and method for generating plasma |
DE102019106767A1 (en) * | 2019-03-18 | 2020-09-24 | Relyon Plasma Gmbh | Arrangement for decontaminating a surface of objects and method for decontaminating a surface of objects |
Also Published As
Publication number | Publication date |
---|---|
EP2141968B1 (en) | 2016-07-13 |
PL2141968T3 (en) | 2017-06-30 |
DE202008008980U1 (en) | 2008-09-04 |
EP2141968A3 (en) | 2014-01-22 |
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