EP2117052A2 - Semiconductor sheets and methods of fabricating the same - Google Patents
Semiconductor sheets and methods of fabricating the same Download PDFInfo
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- EP2117052A2 EP2117052A2 EP09158834A EP09158834A EP2117052A2 EP 2117052 A2 EP2117052 A2 EP 2117052A2 EP 09158834 A EP09158834 A EP 09158834A EP 09158834 A EP09158834 A EP 09158834A EP 2117052 A2 EP2117052 A2 EP 2117052A2
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- layer
- silicon powder
- silicon
- layers
- powder
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 175
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 90
- 238000002844 melting Methods 0.000 claims abstract description 37
- 230000008018 melting Effects 0.000 claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000002425 crystallisation Methods 0.000 claims abstract description 12
- 230000008025 crystallization Effects 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 86
- 239000010703 silicon Substances 0.000 claims description 86
- 239000012535 impurity Substances 0.000 claims description 34
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005204 segregation Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 239000000843 powder Substances 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 22
- 239000000155 melt Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000004320 controlled atmosphere Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- This invention relates generally to semiconductor sheets, and more specifically semiconductor sheets and methods of fabricating the same.
- a wide variety of fabrication methods are used to produce semiconductor wafers from silicon feedstock.
- at least some known multicrystalline silicon wafers used in solar cells have been produced by melting a high-purity material to which a dopant, such as phosphorus, boron, gallium, and/or antimony is added, has been added, in an inert atmosphere.
- the resulting silicon melt is deposited and is cooled to form a multicrystalline ingot.
- the ingot is then sliced to a desired wafer size.
- a layer of granular silicon is applied to a belt or a setter.
- the silicon, along with the belt or setter is then subjected to a thermal sequence to form a silicon wafer or sheet of silicon.
- the silicon wafer and/or sheet of silicon is then removed from the belt or setter, and is then sized by sawing or scribing.
- a significant portion of the cost of such semiconductor wafers is the raw semiconductor material itself.
- a limiting factor for the use of such systems is the cost of the semiconductor material in the semiconductor wafers (in particular, the cost of the silicon) needed for such systems.
- Various purities of silicon feedstock are available for use in producing semiconductor wafers. The purity of silicon feedstock is determined by the level of impurities, such as, boron, phosphorus, iron, titanium, and tungsten, that are present in the silicon feedstock.
- Some applications of semiconductor wafers for example, high-power electronic devices, require a higher degree of silicon feedstock purity than other applications, for example, solar-electric systems. Because the cost of silicon feedstock increases as the purity of the silicon feedstock increases, the use of solar-electric devices may be limited by the cost of the silicon.
- a method of fabricating a sheet of semiconductor material includes forming a first layer of silicon powder that has a lower surface and an opposite upper surface. The method also includes depositing a second layer of silicon powder across the upper surface of the first layer, wherein the second layer of silicon powder has a lower surface and an opposite upper surface and has a lower melting point than the first layer of silicon powder. The method also includes heating at least one of the first and second layers of silicon powder to initiate a controlled melt of one of the first and second layers of silicon powder, and cooling at least one of the first and second layers of silicon powder to initiate crystallization of at least one of the first and second layers of silicon powder.
- a method of fabricating a semiconductor wafer includes forming a first layer of silicon powder that has a lower surface and an opposite upper surface. The method also includes depositing a second layer of silicon powder across the upper surface of the first layer, wherein the second layer of silicon powder has a lower surface and an opposite upper surface and has a lower melting point than the first layer of silicon powder. The method also includes heating at least one of the first and second layers of silicon powder to initiate a controlled melt of one of the first and second layers of silicon powder, and cooling at least one of the first and second layers of silicon powder to initiate crystallization of at least one of the first and second layers of silicon powder to form a silicon sheet. The method also includes cutting the silicon sheet to form at least one semiconductor wafer, wherein the at least one semiconductor wafer is sized to facilitate use in a predetermined application.
- a sheet of semiconductor material having a lower surface and an opposite upper surface has a higher concentration of metal impurities at the lower surface than any other portion of said sheet.
- the sheet of semiconductor material is fabricated by a process that includes: forming a first layer of silicon feedstock that has a lower surface and an opposite upper surface; depositing a second layer of silicon feedstock across the upper surface of the first layer, wherein the second layer of silicon feedstock comprises a silicon powder and a metal impurity and has a lower melting point than the first layer of silicon feedstock; heating at least one of the first and second layers of silicon feedstock to initiate a controlled melt of at least one of the first and second layers of silicon feedstock; and cooling at least one of the first and second layers of silicon feedstock to initiate crystallization of at least one of the first and second layers of silicon feedstock.
- the heating and cooling facilitates segregation of the metal impurity towards the lower surface of the first layer of silicon feedstock.
- silicon is one of the most commonly used semiconductor materials, also referred to as feedstock, used in the fabrication of semiconductor wafers. Accordingly, as used herein, the terms “semiconductor” and “semiconductor materials” refer to silicon based components and silicon materials. However, as will be readily appreciated by one of ordinary skill in the art, other semiconductor materials in addition to the silicon materials and/or including non-silicon materials can be fabricated using the apparatus and methods described herein. Also, although only the use of silicon powder feedstock is described for use in fabricating a silicon sheet is described herein. Alternatively, crystallized silicon feedstock may be used without deviating from the present invention.
- FIG 1 is a schematic diagram of an exemplary apparatus 10 that may be used to fabricate silicon sheets (not shown in Figure 1 ).
- fabrication apparatus 10 is a controlled-atmosphere furnace that includes a plurality of zones, for example, an upper climate zone 12 and a lower climate zone 14. Zones 12 and 14 operate at different temperature conditions as described in more detail below.
- Fabrication apparatus 10 also includes a surface 16 that extends between upper climate zone 12 and lower climate zone 14. Surface 16 may be a plate, a conveyor belt, a setter, and/or any other component that facilitates the fabrication of a silicon sheet as described herein.
- a user positions at least one layer of silicon powder, for example, first layer 18 and/or second layer 20 within fabrication apparatus 10.
- surface 16 is a conveyor belt
- the conveyor belt passes under a hopper 22 that deposits a desired quantity of silicon powder, together with any desired additives, onto the conveyor belt to create a first layer of silicon powder 18.
- a second hopper 24 may be used to dispense additional silicon powder onto the conveyor to create a second layer of silicon powder 20.
- upper climate zone 12 and lower climate zone 14 each include a heat source (not shown in Figure 1 ). Each heat source provides thermal energy to each respective climate zone 12 and 14. Any heat source may be used that enables fabrication apparatus 10 to function as described herein.
- upper climate zone 12 and lower climate zone 14 each also include a heat extractor (not shown in Figure 1 ). The heat extractors facilitate removing thermal energy from an object positioned within zones 12 and 14. Any heat extractor may be included that enables fabrication apparatus 10 to function as described herein.
- an inert atmosphere is preferably maintained within an interior 26 of fabrication apparatus 10.
- the interior 26 includes upper climate zone 12 and lower climate zone 14.
- the interior 26 of fabrication apparatus 10 is substantially sealed to facilitate preventing the inert materials from escaping from the fabrication apparatus 10 and to prevent contaminants from entering.
- Silicon layers 18 and 20 are then subjected to a thermal treatment.
- upper climate zone 12 and lower climate zone 14 can be independently controlled.
- each silicon layer 18 and/or 20 can be subjected to an independent thermal treatment such that any desired thermal profile, described in more detail below, can be implemented.
- the methods described below are performed within fabrication apparatus 10 to fabricate a silicon sheet from silicon feedstock.
- the two climate zones 12 and 14 facilitate greater control over the thermal energy applied to silicon layers 18 and/or 20.
- Fabrication apparatus 10, and more specifically, the two climate zones 12 and 14 in combination with surface 16, facilitate control over the application and removal of thermal energy to silicon layers 18 and/or 20.
- Figures 2-6 are cross-sectional views of semiconductor materials, for example, silicon feedstock, at subsequent stages of fabrication when fabricating a silicon sheet 28 (shown in Figure 6 ). More specifically, Figure 2 is an exemplary cross-sectional view of a plurality of layers, for example, a first layer 30 and a second layer 32, of different silicon powders.
- first layer 30 of a first silicon powder 34 is deposited across surface 16 (shown in Figure 1 ). Once deposited, first layer 30 includes a bottom surface 36 and an upper surface 38.
- Second layer 32 of a second silicon powder 42 is then deposited across first layer upper surface 38. Once deposited, second layer 32 includes a bottom surface 44 and an upper surface 46.
- first silicon powder 34 and second silicon powder 42 are different.
- the melting point of either the first powder 34 and/or the second powder 42 is modified, such that the melting points of each powder 34 and 42 are different.
- the melting point of second powder 42 is modified through the addition of an impurity (not shown in Figure 2 ), such as, but not limited to, a metal material.
- the melting point of second powder 42 may be reduced with the addition of iron and/or copper in second powder 42.
- the reduced melting point of second layer 32, as compared to first layer 30, facilitates improving the control of the melting and re-crystallization of first and second layers 30 and 32.
- fabrication apparatus 10 facilitates controlled application and removal of thermal energy, the different melting points of first powder 34 and second powder 42 decreases the level of temperature accuracy needed to perform the methods described herein.
- second layer 32 melts into a liquid and re-crystallizes before first layer 30 is liquified.
- the dissimilar melting points enable a manufacturer to melt and solidify one layer, i.e., layer 32, of the multiple layers of silicon powder preferentially.
- the melting point of one of layers 30 and 32 is modified by oxidizing the silicon powder.
- the melting point of one of the layers 30 and/or 32 is modified using any other modification means that enables sheet 28 (shown in Figure 6 ) to be fabricated as described herein.
- Figure 3 is a cross-sectional diagram of first layer 30 and second layer 32 during a subsequent stage of fabrication in which thermal energy 50 is applied.
- first and second layers 30 and 32 are heated and/or cooled within fabrication apparatus 10 (shown in Figure 1 ) until second powder 42 melts into a liquid.
- a greater amount of thermal energy 50 is applied to upper surface 46 of second layer 32 than is applied to bottom surface 36 of first layer 30.
- the combination of the reduced melting point of second powder 42 and the increased amount of thermal energy being applied to upper surface 46 causes the second powder 42 to melt before the first powder 34.
- the liquified second powder 42 seeps at least partially into the first layer 30.
- the impurities added to second powder 42 are segregated towards bottom surface 44 and upper surface 38.
- Figure 4 is a cross-sectional diagram of first layer 30 and second layer 32 during a subsequent stage of fabrication in which thermal energy 50 is applied to bottom surface 36 and is removed from upper surface 46. Specifically, in this stage of fabrication, the application of thermal energy 50 to upper surface 46 is discontinued, and the magnitude of thermal energy 50 that is applied to bottom surface 36 is increased. As thermal energy 50 is extracted from upper surface 46, second powder 42 is re-crystallized. The re-crystallized second powder 42 is substantially impurity-free, as the impurities segregate towards bottom surface 44 and upper surface 38.
- first powder 34 begins to melt.
- liquified silicon powder 42 mixes with first powder 34.
- the melting of silicon powder 34 is aided by the impurity-rich liquified silicon powder 42 that has seeped into the upper surface 38 of first powder 34.
- Figure 5 is a cross-sectional diagram of first layer 30 and second layer 32 during a subsequent stage of fabrication in which crystallization continues. Specifically in this stage of fabrication, thermal energy 50 continues to be extracted from upper surface 46, while thermal energy 50 continues to be applied to bottom surface 36. First powder 34 melts into a liquid after the temperature is raised to its melting point. Melting first powder 34 into a liquid enables the impurities formerly present in second powder 42 to segregate towards bottom surface 36. The extraction of thermal energy 50 from upper surface 46 continues to cause crystallization to occur from upper surface 46 towards bottom surface 36.
- Figure 6 is a cross-sectional diagram of silicon sheet 28 during a subsequent stage of fabrication. Specifically during this stage of fabrication, the application of thermal energy to bottom surface 36 is discontinued and the extraction of thermal energy from bottom surface 36 is initiated. Crystallization continues from upper surface 46 towards bottom surface 36, and the impurities continue to segregate towards bottom surface 36, leaving a high impurity content at bottom surface 36 of silicon sheet 28.
- bottom surface 36 has an impurity concentration of up to 20% and/or at least 100 parts per million (ppm).
- Impurities that segregate to bottom surface 36 provide little or no substantial detrimental effect on the performance of solar cells made from silicon wafers produced using the above described methods, so long as a thickness 54 of a first crystallized layer 56 is sufficiently large compared to the minority carrier diffusion length of the first crystallized layer 56.
- other impurities present in first powder 34 and second powder 42 such as, but not limited to, boron, phosphorus, titanium, and tungsten, also segregate towards bottom surface 36 as first powder 34 and second powder 42 are melted and re-crystallized as described above.
- the process and apparatus described above enable the fabrication of a silicon sheet from multiple layers of silicon powder, which are modified to have slightly dissimilar melting points, by melting the deposited silicon layers in a controlled-atmosphere furnace.
- the different melting points of the multiple layers of silicon powder facilitates enhanced control of melting locally and the melting and partial re-crystallization of one silicon layer before a different silicon layer is melted.
- a layer of silicon powder having a lower melting point is spread across a layer of silicon powder having a higher melting point.
- the upper layer melts, impurities in the layer segregate towards the bottom of the wafer and the upper layer of silicon crystallizes from the top, leaving upper layer of silicon substantially impurity-free.
- Thermal energy is then applied to the layers from beneath the layers.
- the bottom layer of silicon which includes its own impurities and those segregated from the upper layer, melts into a liquid, which enables impurities to segregate towards the bottom of the wafer. Because the thermal energy is removed from above the layers, crystallization continues from top to bottom, segregating the impurities further towards the bottom of the wafer.
- the layers of silicon powder are heated, initially from above, followed by heat extraction and heating from below. Effects from surface tension are avoided by maintaining part of the silicon sheet as a solid throughout the process. Also, the presence of impurities used to modify the melting point of the upper layer of silicon assists the segregation of other undesirable impurities such as, but not limited to, Titanium, Tungsten, and Chromium. This is highly beneficial since silicon feedstock with boron and phosphorous content is more readily available and lower in cost when compared to substantially pure silicon.
- the above-described methods and apparatus provide a cost-effective and reliable means to facilitate the production of thin silicon sheets from low cost powdered silicon feedstock.
- the addition of an impurity reduces the melting point of one layer of silicon feedstock. Having multiple layers of silicon that each has a different melting point, allows melting and partial re-crystallization of one silicon layer before other silicon layers are melted.
- the added impurities, along with any other impurities present in the silicon feedstock segregate towards a bottom of the silicon sheet where the impurities have substantially no detrimental effect on the performance of solar cells made from silicon sheets produced.
- the impurities segregate towards the bottom of the silicon sheet, the top of the silicon sheet is left substantially free of the impurities. As a result, a substantially pure silicon sheet is produced in a cost-effective manner.
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Abstract
Description
- This invention relates generally to semiconductor sheets, and more specifically semiconductor sheets and methods of fabricating the same.
- It is known to cut sheets of semiconductor material into wafers of predetermined sizes. Wafers formed of semiconductor materials are used for a variety of applications, and as such, there is an ever-increasing demand for such wafers. For example, at least some known solar-electric systems employ a semiconductor substrate, typically fabricated from silicon (single crystal or polycrystalline). The use of solar-electric systems has increased sharply in the past decade, and as such, the need for semiconductor wafers has also increased in the past decade. Although the expression "solar-electric" is used herein, persons of skill in the art will recognize that the discussion applies to a variety of photovoltaic materials, systems, and phenomena.
- A wide variety of fabrication methods are used to produce semiconductor wafers from silicon feedstock. For example, at least some known multicrystalline silicon wafers used in solar cells have been produced by melting a high-purity material to which a dopant, such as phosphorus, boron, gallium, and/or antimony is added, has been added, in an inert atmosphere. The resulting silicon melt is deposited and is cooled to form a multicrystalline ingot. The ingot is then sliced to a desired wafer size. In another fabrication method, a layer of granular silicon is applied to a belt or a setter. The silicon, along with the belt or setter, is then subjected to a thermal sequence to form a silicon wafer or sheet of silicon. The silicon wafer and/or sheet of silicon is then removed from the belt or setter, and is then sized by sawing or scribing.
- A significant portion of the cost of such semiconductor wafers is the raw semiconductor material itself. For example, in the case of solar-electric systems, a limiting factor for the use of such systems is the cost of the semiconductor material in the semiconductor wafers (in particular, the cost of the silicon) needed for such systems. Various purities of silicon feedstock are available for use in producing semiconductor wafers. The purity of silicon feedstock is determined by the level of impurities, such as, boron, phosphorus, iron, titanium, and tungsten, that are present in the silicon feedstock. Some applications of semiconductor wafers, for example, high-power electronic devices, require a higher degree of silicon feedstock purity than other applications, for example, solar-electric systems. Because the cost of silicon feedstock increases as the purity of the silicon feedstock increases, the use of solar-electric devices may be limited by the cost of the silicon.
- In one embodiment, a method of fabricating a sheet of semiconductor material is described. The method includes forming a first layer of silicon powder that has a lower surface and an opposite upper surface. The method also includes depositing a second layer of silicon powder across the upper surface of the first layer, wherein the second layer of silicon powder has a lower surface and an opposite upper surface and has a lower melting point than the first layer of silicon powder. The method also includes heating at least one of the first and second layers of silicon powder to initiate a controlled melt of one of the first and second layers of silicon powder, and cooling at least one of the first and second layers of silicon powder to initiate crystallization of at least one of the first and second layers of silicon powder.
- In another embodiment, a method of fabricating a semiconductor wafer is described. The method includes forming a first layer of silicon powder that has a lower surface and an opposite upper surface. The method also includes depositing a second layer of silicon powder across the upper surface of the first layer, wherein the second layer of silicon powder has a lower surface and an opposite upper surface and has a lower melting point than the first layer of silicon powder. The method also includes heating at least one of the first and second layers of silicon powder to initiate a controlled melt of one of the first and second layers of silicon powder, and cooling at least one of the first and second layers of silicon powder to initiate crystallization of at least one of the first and second layers of silicon powder to form a silicon sheet. The method also includes cutting the silicon sheet to form at least one semiconductor wafer, wherein the at least one semiconductor wafer is sized to facilitate use in a predetermined application.
- In another embodiment, a sheet of semiconductor material having a lower surface and an opposite upper surface is described. The sheet of semiconductor material has a higher concentration of metal impurities at the lower surface than any other portion of said sheet. The sheet of semiconductor material is fabricated by a process that includes: forming a first layer of silicon feedstock that has a lower surface and an opposite upper surface; depositing a second layer of silicon feedstock across the upper surface of the first layer, wherein the second layer of silicon feedstock comprises a silicon powder and a metal impurity and has a lower melting point than the first layer of silicon feedstock; heating at least one of the first and second layers of silicon feedstock to initiate a controlled melt of at least one of the first and second layers of silicon feedstock; and cooling at least one of the first and second layers of silicon feedstock to initiate crystallization of at least one of the first and second layers of silicon feedstock. The heating and cooling facilitates segregation of the metal impurity towards the lower surface of the first layer of silicon feedstock.
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Figure 1 is a schematic diagram of an exemplary apparatus that may be used to fabricate a semiconductor sheet; and -
Figures 2-6 are cross-sectional views of a sheet of silicon during subsequent stages of fabrication using the apparatus shown inFigure 1 . - Currently, silicon is one of the most commonly used semiconductor materials, also referred to as feedstock, used in the fabrication of semiconductor wafers. Accordingly, as used herein, the terms "semiconductor" and "semiconductor materials" refer to silicon based components and silicon materials. However, as will be readily appreciated by one of ordinary skill in the art, other semiconductor materials in addition to the silicon materials and/or including non-silicon materials can be fabricated using the apparatus and methods described herein. Also, although only the use of silicon powder feedstock is described for use in fabricating a silicon sheet is described herein. Alternatively, crystallized silicon feedstock may be used without deviating from the present invention.
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Figure 1 is a schematic diagram of anexemplary apparatus 10 that may be used to fabricate silicon sheets (not shown inFigure 1 ). In the exemplary embodiment,fabrication apparatus 10 is a controlled-atmosphere furnace that includes a plurality of zones, for example, anupper climate zone 12 and alower climate zone 14.Zones Fabrication apparatus 10 also includes asurface 16 that extends betweenupper climate zone 12 andlower climate zone 14.Surface 16 may be a plate, a conveyor belt, a setter, and/or any other component that facilitates the fabrication of a silicon sheet as described herein. - In an exemplary embodiment, a user positions at least one layer of silicon powder, for example,
first layer 18 and/orsecond layer 20 withinfabrication apparatus 10. In an alternative embodiment, whereinsurface 16 is a conveyor belt, the conveyor belt passes under ahopper 22 that deposits a desired quantity of silicon powder, together with any desired additives, onto the conveyor belt to create a first layer ofsilicon powder 18. Asecond hopper 24 may be used to dispense additional silicon powder onto the conveyor to create a second layer ofsilicon powder 20. - In the exemplary embodiment,
upper climate zone 12 andlower climate zone 14 each include a heat source (not shown inFigure 1 ). Each heat source provides thermal energy to eachrespective climate zone fabrication apparatus 10 to function as described herein. In the exemplary embodiment,upper climate zone 12 andlower climate zone 14 each also include a heat extractor (not shown inFigure 1 ). The heat extractors facilitate removing thermal energy from an object positioned withinzones fabrication apparatus 10 to function as described herein. - An inert atmosphere is preferably maintained within an interior 26 of
fabrication apparatus 10. Specifically, as defined herein, the interior 26 includesupper climate zone 12 andlower climate zone 14. In the exemplary embodiment, theinterior 26 offabrication apparatus 10 is substantially sealed to facilitate preventing the inert materials from escaping from thefabrication apparatus 10 and to prevent contaminants from entering. - Silicon layers 18 and 20 are then subjected to a thermal treatment. For example,
upper climate zone 12 andlower climate zone 14 can be independently controlled. As such, eachsilicon layer 18 and/or 20 can be subjected to an independent thermal treatment such that any desired thermal profile, described in more detail below, can be implemented. - In an exemplary embodiment, the methods described below are performed within
fabrication apparatus 10 to fabricate a silicon sheet from silicon feedstock. The twoclimate zones silicon layers 18 and/or 20. In certain stages described below, it is advantageous to apply a higher magnitude of thermal energy to an upper surface ofsilicon layer 20 than to a bottom surface ofsilicon layer 18. In other stages described below, it is advantageous to extract thermal energy from an upper surface ofsilicon layer 20 while applying thermal energy to a bottom surface ofsilicon layer 18.Fabrication apparatus 10, and more specifically, the twoclimate zones surface 16, facilitate control over the application and removal of thermal energy tosilicon layers 18 and/or 20. -
Figures 2-6 are cross-sectional views of semiconductor materials, for example, silicon feedstock, at subsequent stages of fabrication when fabricating a silicon sheet 28 (shown inFigure 6 ). More specifically,Figure 2 is an exemplary cross-sectional view of a plurality of layers, for example, afirst layer 30 and asecond layer 32, of different silicon powders. In the exemplary embodiment,first layer 30 of afirst silicon powder 34 is deposited across surface 16 (shown inFigure 1 ). Once deposited,first layer 30 includes abottom surface 36 and anupper surface 38.Second layer 32 of asecond silicon powder 42 is then deposited across first layerupper surface 38. Once deposited,second layer 32 includes abottom surface 44 and anupper surface 46. - In the exemplary embodiment,
first silicon powder 34 andsecond silicon powder 42 are different. For example, the melting point of either thefirst powder 34 and/or thesecond powder 42 is modified, such that the melting points of eachpowder second powder 42 is modified through the addition of an impurity (not shown inFigure 2 ), such as, but not limited to, a metal material. The melting point ofsecond powder 42 may be reduced with the addition of iron and/or copper insecond powder 42. The reduced melting point ofsecond layer 32, as compared tofirst layer 30, facilitates improving the control of the melting and re-crystallization of first andsecond layers fabrication apparatus 10 facilitates controlled application and removal of thermal energy, the different melting points offirst powder 34 andsecond powder 42 decreases the level of temperature accuracy needed to perform the methods described herein. - Specifically, in the exemplary embodiment,
second layer 32 melts into a liquid and re-crystallizes beforefirst layer 30 is liquified. In other words, the dissimilar melting points enable a manufacturer to melt and solidify one layer, i.e.,layer 32, of the multiple layers of silicon powder preferentially. In one alternative embodiment, the melting point of one oflayers layers 30 and/or 32 is modified using any other modification means that enables sheet 28 (shown inFigure 6 ) to be fabricated as described herein. -
Figure 3 is a cross-sectional diagram offirst layer 30 andsecond layer 32 during a subsequent stage of fabrication in whichthermal energy 50 is applied. In the exemplary embodiment, first andsecond layers Figure 1 ) untilsecond powder 42 melts into a liquid. Specifically, in the exemplary embodiment, a greater amount ofthermal energy 50 is applied toupper surface 46 ofsecond layer 32 than is applied tobottom surface 36 offirst layer 30. The combination of the reduced melting point ofsecond powder 42 and the increased amount of thermal energy being applied toupper surface 46, causes thesecond powder 42 to melt before thefirst powder 34. The liquifiedsecond powder 42 seeps at least partially into thefirst layer 30. In addition, oncesecond powder 42 is liquified, the impurities added tosecond powder 42 are segregated towardsbottom surface 44 andupper surface 38. -
Figure 4 is a cross-sectional diagram offirst layer 30 andsecond layer 32 during a subsequent stage of fabrication in whichthermal energy 50 is applied tobottom surface 36 and is removed fromupper surface 46. Specifically, in this stage of fabrication, the application ofthermal energy 50 toupper surface 46 is discontinued, and the magnitude ofthermal energy 50 that is applied tobottom surface 36 is increased. Asthermal energy 50 is extracted fromupper surface 46,second powder 42 is re-crystallized. The re-crystallizedsecond powder 42 is substantially impurity-free, as the impurities segregate towardsbottom surface 44 andupper surface 38. - As the
thermal energy 50 applied tobottom surface 36 is increased,first powder 34 begins to melt. Asfirst powder 34 melts, liquifiedsilicon powder 42 mixes withfirst powder 34. The melting ofsilicon powder 34 is aided by the impurity-richliquified silicon powder 42 that has seeped into theupper surface 38 offirst powder 34. -
Figure 5 is a cross-sectional diagram offirst layer 30 andsecond layer 32 during a subsequent stage of fabrication in which crystallization continues. Specifically in this stage of fabrication,thermal energy 50 continues to be extracted fromupper surface 46, whilethermal energy 50 continues to be applied tobottom surface 36.First powder 34 melts into a liquid after the temperature is raised to its melting point. Meltingfirst powder 34 into a liquid enables the impurities formerly present insecond powder 42 to segregate towardsbottom surface 36. The extraction ofthermal energy 50 fromupper surface 46 continues to cause crystallization to occur fromupper surface 46 towardsbottom surface 36. -
Figure 6 is a cross-sectional diagram ofsilicon sheet 28 during a subsequent stage of fabrication. Specifically during this stage of fabrication, the application of thermal energy tobottom surface 36 is discontinued and the extraction of thermal energy frombottom surface 36 is initiated. Crystallization continues fromupper surface 46 towardsbottom surface 36, and the impurities continue to segregate towardsbottom surface 36, leaving a high impurity content atbottom surface 36 ofsilicon sheet 28. In an example embodiment,bottom surface 36 has an impurity concentration of up to 20% and/or at least 100 parts per million (ppm). Impurities that segregate tobottom surface 36 provide little or no substantial detrimental effect on the performance of solar cells made from silicon wafers produced using the above described methods, so long as athickness 54 of a first crystallizedlayer 56 is sufficiently large compared to the minority carrier diffusion length of the first crystallizedlayer 56. In a manner substantially similar to the description described above of how the impurities segregate towardsbottom surface 36, other impurities present infirst powder 34 andsecond powder 42, such as, but not limited to, boron, phosphorus, titanium, and tungsten, also segregate towardsbottom surface 36 asfirst powder 34 andsecond powder 42 are melted and re-crystallized as described above. - The process and apparatus described above enable the fabrication of a silicon sheet from multiple layers of silicon powder, which are modified to have slightly dissimilar melting points, by melting the deposited silicon layers in a controlled-atmosphere furnace. The different melting points of the multiple layers of silicon powder facilitates enhanced control of melting locally and the melting and partial re-crystallization of one silicon layer before a different silicon layer is melted. More specifically, in the exemplary embodiment, a layer of silicon powder having a lower melting point is spread across a layer of silicon powder having a higher melting point. When thermal energy is applied to the layers of silicon powder from above the layers, the upper layer melts first, seeps partially into the bottom layer, and then re-crystallizes from the top when the heat is extracted from above the layers.
- As the upper layer melts, impurities in the layer segregate towards the bottom of the wafer and the upper layer of silicon crystallizes from the top, leaving upper layer of silicon substantially impurity-free. Thermal energy is then applied to the layers from beneath the layers. The bottom layer of silicon, which includes its own impurities and those segregated from the upper layer, melts into a liquid, which enables impurities to segregate towards the bottom of the wafer. Because the thermal energy is removed from above the layers, crystallization continues from top to bottom, segregating the impurities further towards the bottom of the wafer.
- By melting the layers of silicon powder in different fabrication stages, limitations posed by the high surface tension of silicon are mitigated, such that a thinner wafer from a powder layer that may not otherwise be possible may be produced. In the exemplary embodiment, the layers of silicon powder are heated, initially from above, followed by heat extraction and heating from below. Effects from surface tension are avoided by maintaining part of the silicon sheet as a solid throughout the process. Also, the presence of impurities used to modify the melting point of the upper layer of silicon assists the segregation of other undesirable impurities such as, but not limited to, Titanium, Tungsten, and Chromium. This is highly beneficial since silicon feedstock with boron and phosphorous content is more readily available and lower in cost when compared to substantially pure silicon.
- The above-described methods and apparatus provide a cost-effective and reliable means to facilitate the production of thin silicon sheets from low cost powdered silicon feedstock. The addition of an impurity reduces the melting point of one layer of silicon feedstock. Having multiple layers of silicon that each has a different melting point, allows melting and partial re-crystallization of one silicon layer before other silicon layers are melted. By controlling the application and removal of thermal energy, the added impurities, along with any other impurities present in the silicon feedstock, segregate towards a bottom of the silicon sheet where the impurities have substantially no detrimental effect on the performance of solar cells made from silicon sheets produced. Furthermore, as the impurities segregate towards the bottom of the silicon sheet, the top of the silicon sheet is left substantially free of the impurities. As a result, a substantially pure silicon sheet is produced in a cost-effective manner.
- Exemplary embodiments of a process and apparatus for forming a sheet of silicon using two chemically different layers of powders spread prior to melting is described above in detail. The process and apparatus are not limited to the specific embodiments described herein, but rather, steps of the process and components of the apparatus may be utilized independently and separately from other steps and components described herein.
Claims (15)
- A method of fabricating a sheet of semiconductor material, said method comprising:forming a first layer (18,30) of silicon powder that has a lower surface (36) and an opposite upper surface (38);depositing a second layer (20,32) of silicon powder across the upper surface of the first layer, wherein the second layer of silicon powder has a lower surface (44) and an opposite upper surface (46) and has a lower melting point than the first layer of silicon powder;heating at least one of the first and second layers of silicon powder to initiate a controlled melt of at least one of the first and second layers of silicon powder; andcooling at least one of the first and second layers of silicon powder to initiate crystallization of at least one of the first and second layers of silicon powder.
- A method according to claim 1, wherein depositing a second layer (20,32) of silicon powder further comprises adding an impurity to the second layer of silicon powder to facilitate reducing the melting point of the second layer of silicon powder as compared to the first layer of silicon powder (18,30).
- A method according to claim 2, wherein adding an impurity to the second layer (20,32) of silicon powder comprises adding at least one of iron and copper to the silicon powder.
- A method according to any preceding claim, wherein heating at least one of the first and second layers (18,20,30,32) comprises applying heat to the upper surface (46) of the second layer of silicon powder to cause the second layer of silicon powder to melt.
- A method according to claim 4, wherein heating at least one of the first and second layers (18,20,30,32) further comprises applying heat to the lower surface (36) of the first layer of silicon powder such that a temperature at the lower surface of the first layer is lower than a temperature at the upper surface (46) of the second layer.
- A method according to any preceding claim, further comprising determining when the second layer (20,32) of silicon powder has liquified.
- A method according to claim 6, further comprising discontinuing heating of the upper surface (46) of the second layer (20,32) of silicon powder after determining that the second layer of silicon powder has liquified.
- A method according to claim 6, further comprising increasing the magnitude of heat applied to the lower surface (36) of the first layer (18,30) of silicon powder after determining that the second layer (32) of silicon powder has liquified.
- A method according to claim 6, wherein cooling at least one of the first and second layers (30,32) comprises extracting heat from the upper surface (46) of the second layer of silicon powder to initiate crystallization of at least a portion of the second layer of silicon powder after determining that the second layer of silicon powder has melted.
- A method according to claim 9, wherein extracting heat comprises applying a heat extractor to at least one of the upper surface (46) of the second layer (32) and the lower surface (36) of the first layer (18,30).
- A method of fabricating a semiconductor wafer, said method comprising:forming a first layer (18,30) of silicon powder that has a lower surface (36) and an opposite upper surface (38);depositing a second layer (20, 32) of silicon powder across the upper surface of the first layer, wherein the second layer of silicon powder has a lower surface (44) and an opposite upper surface (46) and has a lower melting point than the first layer of silicon powder;heating at least one of the first and second layers of silicon powder to initiate a controlled melt of one of the first and second layers of silicon powder;cooling at least one of the first and second layers of silicon powder to initiate crystallization of at least one of the first and second layers of silicon powder to form a silicon sheet; andcutting the silicon sheet to form at least one semiconductor wafer, wherein the at least one semiconductor wafer is sized to facilitate use in a predetermined application.
- A method according to claim 11, wherein depositing a second layer (20,32) of silicon powder further comprises adding an impurity to the second layer of silicon powder to facilitate reducing the melting point of the second layer of silicon powder as compared to the first layer of silicon powder (18,30).
- A method according to claim 12, wherein adding an impurity to the second layer (20, 32) of silicon powder comprises adding at least one of iron and copper to the silicon powder.
- A method according to claim 11, wherein heating at least one of the first (18,30) and second (20,32) layers comprises applying heat to the upper surface (46) of the second layer of silicon powder to cause the second layer of silicon powder to melt.
- A sheet of semiconductor material having a lower surface and an opposite upper surface, said sheet of semiconductor material having a higher concentration of metal impurities at the lower surface than any other portion of said sheet, said sheet of semiconductor material fabricated by a process comprising:forming a first layer of silicon feedstock that has a lower surface and an opposite upper surface;depositing a second layer of silicon feedstock across the upper surface of said first layer, wherein said second layer of silicon feedstock comprises a silicon powder and a metal impurity and has a lower melting point than said first layer of silicon feedstock;heating at least one of said first and second layers of silicon feedstock to initiate a controlled melt of at least one of said first and second layers of silicon feedstock; andcooling at least one of said first and second layers of silicon feedstock to initiate crystallization of at least one of said first and second layers of silicon feedstock, wherein the heating and the cooling facilitates segregation of said metal impurity towards the lower surface of said first layer of silicon feedstock.
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US12/117,652 US20090280336A1 (en) | 2008-05-08 | 2008-05-08 | Semiconductor sheets and methods of fabricating the same |
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EP (1) | EP2117052A3 (en) |
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WO2011105538A1 (en) * | 2010-02-25 | 2011-09-01 | 産機電業株式会社 | Method for manufacturing solar cell using silicon powder |
US9957636B2 (en) * | 2014-03-27 | 2018-05-01 | Varian Semiconductor Equipment Associates, Inc. | System and method for crystalline sheet growth using a cold block and gas jet |
CN106554963A (en) * | 2016-06-22 | 2017-04-05 | 陕西东大生化科技有限责任公司 | Gene of coding truncated-type human keratinocyte growth factor and preparation method thereof |
CN115058767B (en) * | 2022-05-30 | 2024-04-23 | 宁夏中晶半导体材料有限公司 | Doping method and device for preparing heavily-doped antimony monocrystal by MCZ (micro-channel chemical vapor deposition) method |
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AU2009201733A1 (en) | 2009-11-26 |
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EP2117052A3 (en) | 2012-02-15 |
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