EP2096686A3 - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
EP2096686A3
EP2096686A3 EP09152536.0A EP09152536A EP2096686A3 EP 2096686 A3 EP2096686 A3 EP 2096686A3 EP 09152536 A EP09152536 A EP 09152536A EP 2096686 A3 EP2096686 A3 EP 2096686A3
Authority
EP
European Patent Office
Prior art keywords
thin
thermal expansion
semiconductor element
film semiconductor
plastic substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09152536.0A
Other languages
German (de)
French (fr)
Other versions
EP2096686A2 (en
Inventor
Takahito Digital Imaging Corporation Suzuki
Mitsuhiko Digital Imaging Corporation Ogihara
Yusuke Digital Imaging Corporation Nakai
Tomohiko Digital Imaging Corporation Sagimori
Hironori Digital Imaging Corporation Furuta
Tomoki Digital Imaging Corporation Igari
Hiroyuki Digital Imaging Corporation Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Data Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Data Corp filed Critical Oki Data Corp
Publication of EP2096686A2 publication Critical patent/EP2096686A2/en
Publication of EP2096686A3 publication Critical patent/EP2096686A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A thin-film semiconductor element is formed on a plastic substrate in a semiconductor device. A thermal expansion buffer layer is interposed between the thin-film semiconductor element and the plastic substrate. Although the thin-film semiconductor element is made from a material with a thermal expansion coefficient differing from the thermal expansion coefficient of the plastic substrate, the thermal expansion buffer layer interposed between the thin-film semiconductor element, and the plastic substrate protects the thin-film semiconductor element from damage caused by mechanical stress in the device fabrication process due to the different thermal expansion coefficients, enabling the semiconductor device to function reliably.
EP09152536.0A 2008-02-27 2009-02-11 Semiconductor device Withdrawn EP2096686A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008045735A JP4575966B2 (en) 2008-02-27 2008-02-27 Semiconductor device

Publications (2)

Publication Number Publication Date
EP2096686A2 EP2096686A2 (en) 2009-09-02
EP2096686A3 true EP2096686A3 (en) 2013-07-10

Family

ID=40673443

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09152536.0A Withdrawn EP2096686A3 (en) 2008-02-27 2009-02-11 Semiconductor device

Country Status (3)

Country Link
US (1) US20090212398A1 (en)
EP (1) EP2096686A3 (en)
JP (1) JP4575966B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010002204A1 (en) * 2010-02-22 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Semiconductor diode and method for producing a semiconductor diode
JP2014187323A (en) * 2013-03-25 2014-10-02 Toshiba Corp Semiconductor light-emitting device
US9443728B2 (en) * 2013-08-16 2016-09-13 Applied Materials, Inc. Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing
US9804309B1 (en) * 2014-04-22 2017-10-31 Kla-Tencor Corporation Reducing extrinsic stress in thin film optical mirrors and filters for deep ultraviolet
JP7274442B2 (en) * 2020-04-02 2023-05-16 信越化学工業株式会社 Composite substrate and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5319479A (en) * 1990-09-04 1994-06-07 Ricoh Company, Ltd. Deposited multi-layer device with a plastic substrate having an inorganic thin film layer
US6236061B1 (en) * 1999-01-08 2001-05-22 Lakshaman Mahinda Walpita Semiconductor crystallization on composite polymer substrates
US20030077886A1 (en) * 2000-12-18 2003-04-24 Akio Machida Semiconductor layer doping method, thin-film semiconductor device manufacturing method, and thin-film semiconductor device
US20040157470A1 (en) * 2001-06-04 2004-08-12 Akio Machida Functional device and production method therefor

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61130041A (en) * 1984-11-28 1986-06-17 ポリプラスチックス株式会社 Manufacture of molded shape having excellent size stability
JP2755844B2 (en) * 1991-09-30 1998-05-25 シャープ株式会社 Plastic substrate liquid crystal display
JPH05315578A (en) * 1992-05-06 1993-11-26 Fujitsu Ltd Solid-state image sensing device
WO2000016411A1 (en) * 1998-09-10 2000-03-23 Rohm Co., Ltd. Semiconductor light-emitting device and method for manufacturing the same
JP2000307141A (en) * 1999-02-16 2000-11-02 Tdk Corp Functional part and its manufacture
TW463525B (en) * 2000-06-01 2001-11-11 Ind Tech Res Inst Organic electroluminescent device and the manufacturing method of the same
US6528824B2 (en) * 2000-06-29 2003-03-04 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2002184993A (en) * 2000-12-11 2002-06-28 Sony Corp Semiconductor device
US6767807B2 (en) * 2001-03-02 2004-07-27 Fuji Photo Film Co., Ltd. Method for producing organic thin film device and transfer material used therein
JP2002268056A (en) 2001-03-13 2002-09-18 Fuji Photo Film Co Ltd Liquid crystal display device
JP2002328779A (en) * 2001-05-07 2002-11-15 Matsushita Electric Ind Co Ltd Touch penal and electronic equipment using the same
JP2003297563A (en) 2002-03-29 2003-10-17 Fuji Photo Film Co Ltd Manufacturing method of organic film element and organic film element
JP2005085830A (en) * 2003-09-05 2005-03-31 Sony Corp Thin film device and method for manufacturing the same
US20070267646A1 (en) * 2004-06-03 2007-11-22 Philips Lumileds Lighting Company, Llc Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic
DE112005002267A5 (en) * 2004-09-27 2007-10-11 Schott Ag Composite structure of zero expansion material and method of making such
KR100624307B1 (en) * 2005-02-23 2006-09-19 제일모직주식회사 Brightness-enhanced Multi-layer Optical Film of Low Reflectivity for Display and Organic Light Emitting Diode Dispaly using the Same
US7652291B2 (en) * 2005-05-28 2010-01-26 Samsung Mobile Display Co., Ltd. Flat panel display
EP1760776B1 (en) * 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5319479A (en) * 1990-09-04 1994-06-07 Ricoh Company, Ltd. Deposited multi-layer device with a plastic substrate having an inorganic thin film layer
US6236061B1 (en) * 1999-01-08 2001-05-22 Lakshaman Mahinda Walpita Semiconductor crystallization on composite polymer substrates
US20030077886A1 (en) * 2000-12-18 2003-04-24 Akio Machida Semiconductor layer doping method, thin-film semiconductor device manufacturing method, and thin-film semiconductor device
US20040157470A1 (en) * 2001-06-04 2004-08-12 Akio Machida Functional device and production method therefor

Also Published As

Publication number Publication date
US20090212398A1 (en) 2009-08-27
JP2009206244A (en) 2009-09-10
JP4575966B2 (en) 2010-11-04
EP2096686A2 (en) 2009-09-02

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