EP2084792A2 - Optically pumped solid-state laser with co-doped gain medium - Google Patents

Optically pumped solid-state laser with co-doped gain medium

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Publication number
EP2084792A2
EP2084792A2 EP07826745A EP07826745A EP2084792A2 EP 2084792 A2 EP2084792 A2 EP 2084792A2 EP 07826745 A EP07826745 A EP 07826745A EP 07826745 A EP07826745 A EP 07826745A EP 2084792 A2 EP2084792 A2 EP 2084792A2
Authority
EP
European Patent Office
Prior art keywords
ions
laser
solid
state
state laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07826745A
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German (de)
French (fr)
Inventor
Ulrich Weichmann
Peter J. Schmidt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
Original Assignee
Philips Intellectual Property and Standards GmbH
Koninklijke Philips Electronics NV
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Application filed by Philips Intellectual Property and Standards GmbH, Koninklijke Philips Electronics NV filed Critical Philips Intellectual Property and Standards GmbH
Priority to EP07826745A priority Critical patent/EP2084792A2/en
Publication of EP2084792A2 publication Critical patent/EP2084792A2/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1605—Solid materials characterised by an active (lasing) ion rare earth terbium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1631—Solid materials characterised by a crystal matrix aluminate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1631—Solid materials characterised by a crystal matrix aluminate
    • H01S3/1638—YAlO3 (YALO or YAP, Yttrium Aluminium Perovskite)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1655—Solid materials characterised by a crystal matrix silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1668—Solid materials characterised by a crystal matrix scandate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1691—Solid materials characterised by additives / sensitisers / promoters as further dopants
    • H01S3/1698—Solid materials characterised by additives / sensitisers / promoters as further dopants rare earth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Definitions

  • the present invention relates to a solid-state laser comprising a gain medium of a solid-state host material, which is doped with rare-earth ions.
  • US 6,816,532 B2 discloses a laser diode exited laser apparatus in which the gain medium is doped with rare-earth ions, in particular with Ho 3+ -, Sm 3+ -, Eu 3+ -, Dy 3+ -, Er 3+ - and Tb 3+ - ions.
  • the solid gain medium is pumped by a GaN based laser diode. Both the excitation and the laser emission of the disclosed laser involve transitions between 4f states of the rare-earth ion. Since the absorption at these transitions is relatively weak, the efficiency of the devices is limited and long interaction lengths like for example in fiber lasers are required.
  • the proposed solid-state laser comprises a gain medium of a solid-state host material, which is co-doped with the Ce 3+ - ions and with ions of a further rare-earth material.
  • the host material is selected such that a lower edge of the 5d band of the Ce 3+ - ion is energetically higher than an upper lasing state of the ions of the further rare-earth material.
  • the proposed all solid-state laser can be pumped efficiently with GaN laser diodes in the wavelength range of for example between 400 and 450 nm.
  • the gain medium absorbs the radiation of the pump laser via the 4f-5d transitions in the Ce 3+ - ion. From the 5d band of the Ce 3+ - ion the energy is transferred to the upper lasing state of the further rare-earth ion which then emits the desired laser radiation through a transition between the upper lasing state and a lower lasing state.
  • the emitted laser wavelength is influenced by the selection of the further rare-earth ions and may further be influenced by the spectral characteristics of the resonator mirrors of the solid-state laser.
  • Ce 3+ - ions with further trivalent rare- earth ions are combinations of Ce 3+ -ions with Pr 3+ , Sm 3+ , Eu 3+ , Dy 3+ and Tm 3+ to design lasers emitting with different wavelengths in the visible wavelength range.
  • the proposed solid-state laser comprises a gain medium of a solid-state host material, which is co-doped with Ce 3+ - ions and Tb 3+ - ions.
  • the laser pumping scheme involves 4f-5d-transitions in Ce 3+ , energy transfer from the Ce 3+ 5d band to the 5 D 4 -state of Tb 3+ , from which laser emission takes place.
  • This scheme is very attractive since it combines the high absorption of 4f-5d-transitions with the known laser properties of rare-earth 4f-4f lasers. Highly integrated, efficient laser devices are therefore possible.
  • the Tb 3+ - ion is very attractive to provide an optically pumped solid-state laser in the green wavelength range, since it has a well isolated 5 D 4 state with a long lifetime in many hosts. From this 5 D 4 -level green emission around 543 nm is very pronounced.
  • the dopant concentration Cce for the Ce 3+ -ions is preferably in the range of 0.01% wt to 5% wt.
  • the appropriate selection of this host material is important in order to achieve the desired laser action.
  • Very advantageous laser operation has been observed when using host materials with an energy gap of at least 6 eV.
  • the host materials also have to ensure the energy transfer between the 5d-band of the Ce 3+ -ions and, for example, the 5 D 4 state of the Tb 3+ ions.
  • the Ce 3+ -ions act as a sensitizer and provide a good absorption of the pump radiation via the 4f-5d transitions, whereas the further rare-earth ions act as the laser active ions.
  • solid-state host materials doped with Ce 3+ -ions are not suited for laser action due to very strong excited state absorption, it was surprisingly found by the inventors of the present invention, that by co-doping the Ce 3+ -ions with further trivalent rare-earth ions and by selecting an appropriate host material, laser action can be achieved in an efficient manner.
  • an all-solid-state laser is realized which can be efficiently pumped by GaN based laser diodes to emit in the green wavelength range.
  • Such all-solid-state laser systems including the pump laser can be manufactured in a highly integrated manner and are in particular suited as light sources for projection systems in display or illumination applications.
  • the optical design of the all-solid-state laser can be chosen as known in the art.
  • a laser can be set up for example in the form of an end pumped rod, similar to other diode pumped solid-state lasers known in the art.
  • the proposed laser can also be designed in the form of a planar waveguide laser, in which the co-doped material is brought to the form of a planar waveguide that is adapted in its geometry to the emission profile of the laser diode.
  • the laser diode and the co-doped conversion medium are preferably placed on a shared cooling structure, which allows for a highly integrated device.
  • the high absorption of the Ce 3+ -ions allows also for transversal pump geometries, in which the laser radiation emerges in a direction perpendicular to the direction of the pump radiation.
  • Fig. 1 an excitation scheme of a preferred embodiment of the proposed laser
  • Fig. 2 an example for an end pumped geometry of the proposed laser
  • Fig. 3 an example of a transversally pumped geometry of the proposed laser.
  • the gain medium of the proposed laser is co-doped with Ce 3+ - and Tb 3+ -ions.
  • the Ce-Tb-laser is pumped with a GaN based laser diode.
  • Figure 1 shows the pumping and lasing scheme of such a solid-state laser.
  • the blue pump radiation 1 of the GaN based laser diode is absorbed via the 4f-5d transition of the Ce 3+ -ions.
  • energy transfer 2 takes place between the 5d band of the Ce 3+ -ions and the upper lasing state ( 5 D 4 state) of the Tb 3+ - ions as is indicated in the figure. From this 5 D 4 state of the Tb 3+ -ions laser emission 3 around 543 nm starts by transition to a lower state of the Tb 3+ -ions.
  • the laser emission 3 is very pronounced in this laser scheme.
  • Figure 2 shows an example for an end pumped geometry of the proposed Ce-Tb-laser.
  • the pump radiation emitted by a GaN laser diode 4 is focused by appropriate optics 5 through the first resonator end mirror 7 of the solid-state laser into the Ce 3+ -Tb 3+ co-doped gain material 6.
  • the first resonator end mirror 7 used for end pumping is highly reflective for radiation in the green wavelength region and antireflective for the pump radiation wavelength.
  • the second resonator end mirror 8 on the other hand is highly reflective for the wavelength of the pump radiation and sufficiently reflective for the green wavelength emitted by the gain material 6 in order to achieve lasing action. On the other hand this second resonator end mirror 8 allows the outcoupling of a portion of the laser emission 3 in the green wavelength region.
  • FIG 3 shows another example for the design of the proposed solid-state laser.
  • a transversally pumped geometry is used for the Ce-Tb-laser.
  • the gain medium 6 of the Ce-Tb-laser in this case has two resonator end mirrors 10 which reflect a sufficiently high portion of the generated green radiation to maintain laser action. Both resonator end mirrors 10 also serve as outcoupling mirrors for the laser radiation 3.
  • the gain medium 6 is transversally pumped by a GaN diode laser module 9 composed of several GaN laser diodes side by side in order to achieve emission of the pump radiation 1 over the whole length of the gain medium 6 as indicated in Figure 3.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present invention relates to a solid-state laser comprising a gain medium (6) of a solid-state host material which is co-doped with Ce3+-ions and ions of a further rare-earth material. The host material is selected such that a lower edge of the 5d band of the Ce3+-ions is energetically higher than an upper lasing state of the ions of the further rare-earth material. This laser can be optically pumped by GaN laser diodes (4) in the wavelength region between 400 and 450 nm and emits laser radiation in the visible wavelength range. With this laser, in particular, a GaN diode laser pumped solid-state laser emitting in the green wavelength region can be realized.

Description

OPTICALLY PUMPED SOLID-STATE LASER WITH CO-DOPED GAIN MEDIUM
Technical field
The present invention relates to a solid-state laser comprising a gain medium of a solid-state host material, which is doped with rare-earth ions.
Lasers are good candidates to replace nowadays UHP-lamps (UHP: Ultra High Performance) as the light source for projection systems. While red and blue laser diodes are available, the lack of integrated laser sources in the green wavelength region has until now hindered the widespread use of lasers for display or illumination applications.
Background of the invention Nowadays used laser sources for the green wavelength region rely on frequency conversion either by upconversion or by second harmonic generation (SHG) of an infrared laser source.
An alternative to upconversion from the infrared wavelength region is the frequency conversion of blue laser sources like in the case of the well-known dye lasers. With the recent development of GaN-based laser diodes for the blue-violet region this scheme becomes attractive for all-solid-state devices.
US 6,816,532 B2 discloses a laser diode exited laser apparatus in which the gain medium is doped with rare-earth ions, in particular with Ho3+-, Sm3+-, Eu3+-, Dy3+-, Er3+- and Tb3+- ions. The solid gain medium is pumped by a GaN based laser diode. Both the excitation and the laser emission of the disclosed laser involve transitions between 4f states of the rare-earth ion. Since the absorption at these transitions is relatively weak, the efficiency of the devices is limited and long interaction lengths like for example in fiber lasers are required. For populating the upper laser level 5D4 of the Tb3+- ion with a GaN laser diode as the pump source, either excitation at 488 nm or at 380 nm towards the 5D3 level with successive relation towards the 5D4 level is required. Efficient GaN laser diodes at both pump wavelengths 488 nm and 380 nm are not available yet.
Summary of the invention
It is an object of the present invention to provide a solid-state laser emitting in the visible wavelength region, which can be optically pumped efficiently by GaN laser diodes.
The object is achieved with the solid-state laser according to claim 1. Advantageous embodiments are subject matter of the sub claims or are described in the subsequent description including the embodiments for carrying out of the invention.
The proposed solid-state laser comprises a gain medium of a solid-state host material, which is co-doped with the Ce3+- ions and with ions of a further rare-earth material. The host material is selected such that a lower edge of the 5d band of the Ce3+- ion is energetically higher than an upper lasing state of the ions of the further rare-earth material.
With such a gain medium, the proposed all solid-state laser can be pumped efficiently with GaN laser diodes in the wavelength range of for example between 400 and 450 nm. The gain medium absorbs the radiation of the pump laser via the 4f-5d transitions in the Ce3+- ion. From the 5d band of the Ce3+- ion the energy is transferred to the upper lasing state of the further rare-earth ion which then emits the desired laser radiation through a transition between the upper lasing state and a lower lasing state. The emitted laser wavelength is influenced by the selection of the further rare-earth ions and may further be influenced by the spectral characteristics of the resonator mirrors of the solid-state laser. The proper selection of the host material is very important, since this host material influences the energy levels of both rare-earth ions. Advantageous combinations of the Ce3+- ions with further trivalent rare- earth ions are combinations of Ce3+-ions with Pr3+, Sm3+, Eu3+, Dy3+ and Tm3+ to design lasers emitting with different wavelengths in the visible wavelength range.
In a preferred embodiment the proposed solid-state laser comprises a gain medium of a solid-state host material, which is co-doped with Ce3+- ions and Tb3+- ions. In this case, the laser pumping scheme involves 4f-5d-transitions in Ce3+, energy transfer from the Ce3+ 5d band to the 5D4-state of Tb3+, from which laser emission takes place. This scheme is very attractive since it combines the high absorption of 4f-5d-transitions with the known laser properties of rare-earth 4f-4f lasers. Highly integrated, efficient laser devices are therefore possible. The Tb3+- ion is very attractive to provide an optically pumped solid-state laser in the green wavelength range, since it has a well isolated 5D4 state with a long lifetime in many hosts. From this 5D4-level green emission around 543 nm is very pronounced.
The dopant concentration Cce for the Ce3+-ions is preferably in the range of 0.01% wt to 5% wt. The concentration of the Tb3+-ions Cib is preferably selected depending on the concentration Cce of the Ce3+-ions according to Cib = k * Cce , with k varying between 0.5 and 50.
Since the energetic position of the 5 f bands in the Ce3+-ions as well as of the lasing states in the further rare-earth ions depend on the host material, the appropriate selection of this host material is important in order to achieve the desired laser action. Very advantageous laser operation has been observed when using host materials with an energy gap of at least 6 eV. The host materials also have to ensure the energy transfer between the 5d-band of the Ce3+-ions and, for example, the 5D4 state of the Tb3+ ions. Preferred host materials for the proposed solid-state laser are Y3_xLuxAl5_ yGayO12 (x=l, 2,3; y=l, 2,3,4,5), Y3-xCaxAl5_xSixO12, Y3-xAl5_xScx012, M2O3 (with M = Sc, Y, Lu, Gd, La), CaYAlO4 and M2SiO5 (with M= Y, Lu, Gd or combinations of these). In the proposed solid-state laser the Ce3+-ions act as a sensitizer and provide a good absorption of the pump radiation via the 4f-5d transitions, whereas the further rare-earth ions act as the laser active ions. Although it is known in the art that solid-state host materials doped with Ce3+-ions are not suited for laser action due to very strong excited state absorption, it was surprisingly found by the inventors of the present invention, that by co-doping the Ce3+-ions with further trivalent rare-earth ions and by selecting an appropriate host material, laser action can be achieved in an efficient manner. Furthermore, by combination of Ce3+- with Tb3+-ions an all-solid-state laser is realized which can be efficiently pumped by GaN based laser diodes to emit in the green wavelength range. Such all-solid-state laser systems including the pump laser can be manufactured in a highly integrated manner and are in particular suited as light sources for projection systems in display or illumination applications.
The optical design of the all-solid-state laser can be chosen as known in the art. Such a laser can be set up for example in the form of an end pumped rod, similar to other diode pumped solid-state lasers known in the art. The proposed laser can also be designed in the form of a planar waveguide laser, in which the co-doped material is brought to the form of a planar waveguide that is adapted in its geometry to the emission profile of the laser diode. In this case, the laser diode and the co-doped conversion medium are preferably placed on a shared cooling structure, which allows for a highly integrated device. The high absorption of the Ce3+-ions allows also for transversal pump geometries, in which the laser radiation emerges in a direction perpendicular to the direction of the pump radiation.
These and other aspects of the invention will be apparent from and elucidated with reference to the embodiments described herein after. Brief description of the drawings
The proposed solid-state laser and laser system will be described in the following by way of examples in connection with the accompanying figures without limiting the scope of protection as defined by the claims. The figures show:
Fig. 1 an excitation scheme of a preferred embodiment of the proposed laser;
Fig. 2 an example for an end pumped geometry of the proposed laser; and
Fig. 3 an example of a transversally pumped geometry of the proposed laser. Embodiments for carrying out the invention
In the following embodiments the gain medium of the proposed laser is co-doped with Ce3+- and Tb3+-ions. The Ce-Tb-laser is pumped with a GaN based laser diode. Figure 1 shows the pumping and lasing scheme of such a solid-state laser. The blue pump radiation 1 of the GaN based laser diode is absorbed via the 4f-5d transition of the Ce3+-ions. After excitation with the pump radiation 1 energy transfer 2 takes place between the 5d band of the Ce3+-ions and the upper lasing state (5D4 state) of the Tb3+- ions as is indicated in the figure. From this 5D4 state of the Tb3+-ions laser emission 3 around 543 nm starts by transition to a lower state of the Tb3+-ions. The laser emission 3 is very pronounced in this laser scheme.
Figure 2 shows an example for an end pumped geometry of the proposed Ce-Tb-laser. The pump radiation emitted by a GaN laser diode 4 is focused by appropriate optics 5 through the first resonator end mirror 7 of the solid-state laser into the Ce3+-Tb3+ co-doped gain material 6. The first resonator end mirror 7 used for end pumping is highly reflective for radiation in the green wavelength region and antireflective for the pump radiation wavelength. The second resonator end mirror 8 on the other hand is highly reflective for the wavelength of the pump radiation and sufficiently reflective for the green wavelength emitted by the gain material 6 in order to achieve lasing action. On the other hand this second resonator end mirror 8 allows the outcoupling of a portion of the laser emission 3 in the green wavelength region.
Figure 3 shows another example for the design of the proposed solid-state laser. In this example, a transversally pumped geometry is used for the Ce-Tb-laser. The gain medium 6 of the Ce-Tb-laser in this case has two resonator end mirrors 10 which reflect a sufficiently high portion of the generated green radiation to maintain laser action. Both resonator end mirrors 10 also serve as outcoupling mirrors for the laser radiation 3. The gain medium 6 is transversally pumped by a GaN diode laser module 9 composed of several GaN laser diodes side by side in order to achieve emission of the pump radiation 1 over the whole length of the gain medium 6 as indicated in Figure 3. While the invention has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative or exemplary and not restrictive; the invention is not limited to the disclosed embodiments. The different embodiments described above and in the claims can also be combined.
Other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed invention, from a study of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the indefinite article "a" or "an" does not exclude a plurality. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. Any reference signs in the claims should not be construed as limiting the scope of these claims.
LIST OF REFERENCE SIGNS
1 pump radiation
2 energy transfer
3 laser radiation 4 GaN laser diode
5 optics
6 Ce3+-Tb3+ co-doped gain material
7 first resonator end mirror
8 second resonator end mirror 9 GaN diode laser module
10 resonator mirrors

Claims

CLAIMS:
1. Solid-state laser comprising a gain medium (6) of a solid-state host material, which is co-doped with Ce3+- ions and ions of a further rare earth material, the host material being selected such that a lower edge of a 5d band of the Ce3+- ions is energetically higher than an upper lasing state of the ions of the further rare earth material.
2. Solid-state laser according to claim 1, wherein the ions of the further rare earth material are Tb3+-ions.
3. Solid-state laser according to claim 2, wherein the host material is selected such that the lower edge of the 5d band of the Ce3+- ions is energetically higher than the 5D4 state of the Tb3+- ions and that an energy gap of the host material is > 6eV.
4. Solid-state laser according to claim 1 or 2, wherein the host material is selected from one of the following materials: Y3-χLuxAl5_yGay012 (x=l,2,3; y=l, 2,3,4,5), Y3-xCaxAl5_xSixO12, Y3-xAl5_xScx012, M2O3 (with M = Sc, Y, Lu, Gd, La), CaYAlO4 and M2SiO5 (with M= Y, Lu, Gd or combinations of these).
5. Solid-state laser according to claim 4, wherein the host material has a dopant concentration of the Ce3+- ions in the range of 0.01% wt to 5% wt and a dopant concentration of the Tb3+- ions, which is between 0.5 and 50 times the dopant concentration of the Ce3+- ions.
6. Solid-state laser according to claim 1, wherein the ions of the further rare earth material are selected from Pr3+-, Sm3+-, Eu3+-, Dy3+- and Tm3+- ions.
7. Solid-state laser system with a solid-state laser according to claim 1, and at least one GaN laser diode (4) arranged to optically pump the gain medium (6) of the solid-state laser.
8. Solid-state laser system with a solid-state laser according to claim 4, and at least one GaN laser diode (4) arranged to optically pump the gain medium (6) of the solid-state laser.
EP07826745A 2006-10-24 2007-10-15 Optically pumped solid-state laser with co-doped gain medium Withdrawn EP2084792A2 (en)

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EP2412068A1 (en) * 2009-03-23 2012-02-01 Koninklijke Philips Electronics N.V. Optically pumped solid-state laser and lighting system comprising said solid-state laser
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CN102051684A (en) * 2011-01-14 2011-05-11 中国科学院上海光学精密机械研究所 Method for growing thulium-holmium co-doped yttrium calcium aluminate laser crystal
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