EP2077580A4 - Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element - Google Patents
Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory elementInfo
- Publication number
- EP2077580A4 EP2077580A4 EP07830485A EP07830485A EP2077580A4 EP 2077580 A4 EP2077580 A4 EP 2077580A4 EP 07830485 A EP07830485 A EP 07830485A EP 07830485 A EP07830485 A EP 07830485A EP 2077580 A4 EP2077580 A4 EP 2077580A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- nonvolatile memory
- memory element
- nonvolatile
- manufacturing
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/34—Material includes an oxide or a nitride
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006311910 | 2006-11-17 | ||
PCT/JP2007/070751 WO2008059701A1 (en) | 2006-11-17 | 2007-10-24 | Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2077580A1 EP2077580A1 (en) | 2009-07-08 |
EP2077580A4 true EP2077580A4 (en) | 2009-11-11 |
EP2077580B1 EP2077580B1 (en) | 2011-11-30 |
Family
ID=39401510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07830485A Active EP2077580B1 (en) | 2006-11-17 | 2007-10-24 | Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element |
Country Status (6)
Country | Link |
---|---|
US (1) | US9236381B2 (en) |
EP (1) | EP2077580B1 (en) |
JP (3) | JP4527170B2 (en) |
KR (1) | KR101012896B1 (en) |
CN (1) | CN101636840B (en) |
WO (1) | WO2008059701A1 (en) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008126365A1 (en) | 2007-03-29 | 2008-10-23 | Panasonic Corporation | Nonvolatile memory device, nonvolatile memory element, and nonvolatile memory element array |
US7948789B2 (en) * | 2007-04-09 | 2011-05-24 | Panasonic Corporation | Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus |
WO2008149484A1 (en) * | 2007-06-05 | 2008-12-11 | Panasonic Corporation | Nonvolatile storage element, its manufacturing method, and nonvolatile semiconductor device using the nonvolatile storage element |
JP5012312B2 (en) * | 2007-08-15 | 2012-08-29 | ソニー株式会社 | Driving method of storage device |
JP4383523B2 (en) | 2007-09-28 | 2009-12-16 | パナソニック株式会社 | Nonvolatile memory element, nonvolatile semiconductor memory device, and reading method and writing method thereof |
JP4545823B2 (en) * | 2007-10-15 | 2010-09-15 | パナソニック株式会社 | Nonvolatile memory element and nonvolatile semiconductor device using the nonvolatile memory element |
KR101490429B1 (en) * | 2008-03-11 | 2015-02-11 | 삼성전자주식회사 | Resistive memory device and method for forming thereof |
CN101779287B (en) * | 2008-05-22 | 2011-12-21 | 松下电器产业株式会社 | Resistance change nonvolatile memory device |
WO2009147790A1 (en) * | 2008-06-03 | 2009-12-10 | パナソニック株式会社 | Non‑volatile storage element, non‑volatile storage device, and non‑volatile semiconductor device |
WO2010004705A1 (en) * | 2008-07-11 | 2010-01-14 | パナソニック株式会社 | Nonvolatile memory element, method for manufacturing the nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element |
WO2010032470A1 (en) * | 2008-09-19 | 2010-03-25 | パナソニック株式会社 | Current suppressing element, storage element, storage device, and method for manufacturing current suppressing element |
WO2010058569A1 (en) | 2008-11-19 | 2010-05-27 | パナソニック株式会社 | Nonvolatile memory element and nonvolatile memory device |
US8426836B2 (en) | 2008-12-03 | 2013-04-23 | Panasonic Corporation | Nonvolatile memory device and manufacturing method thereof |
US8445885B2 (en) * | 2008-12-04 | 2013-05-21 | Panasonic Corporation | Nonvolatile memory element having a thin platinum containing electrode |
US8471235B2 (en) | 2008-12-05 | 2013-06-25 | Panasonic Corporation | Nonvolatile memory element having a resistance variable layer and manufacturing method thereof |
JP4937413B2 (en) * | 2008-12-10 | 2012-05-23 | パナソニック株式会社 | Resistance change element and nonvolatile semiconductor memory device using the same |
KR101108193B1 (en) * | 2008-12-16 | 2012-01-31 | 한국전자통신연구원 | Non-volatile programmable device including phase change layer and fabricating method thereof |
WO2010087211A1 (en) | 2009-02-02 | 2010-08-05 | パナソニック株式会社 | Non-volatile memory element, non-volatile memory device, non-volatile semiconductor device, and non-volatile memory element manufacturing method |
WO2010116754A1 (en) * | 2009-04-10 | 2010-10-14 | パナソニック株式会社 | Method of driving non-volatile memory elements |
JP4705998B2 (en) | 2009-06-08 | 2011-06-22 | パナソニック株式会社 | Resistance change nonvolatile memory element writing method and resistance change nonvolatile memory device |
WO2010143396A1 (en) | 2009-06-08 | 2010-12-16 | パナソニック株式会社 | Forming method for resistance-change non-volatile memory element, and resistance-change non-volatile memory device |
WO2010146850A1 (en) | 2009-06-18 | 2010-12-23 | パナソニック株式会社 | Nonvolatile storage device and method for manufacturing same |
JP4703789B2 (en) | 2009-07-28 | 2011-06-15 | パナソニック株式会社 | Resistance variable nonvolatile memory device and writing method thereof |
JP5036909B2 (en) * | 2009-12-18 | 2012-09-26 | パナソニック株式会社 | Resistance variable element and manufacturing method thereof |
WO2011080866A1 (en) | 2009-12-28 | 2011-07-07 | パナソニック株式会社 | Memory device and manufacturing method therefor |
JP5406314B2 (en) | 2010-01-25 | 2014-02-05 | パナソニック株式会社 | Method for manufacturing nonvolatile semiconductor memory element and method for manufacturing nonvolatile semiconductor memory device |
KR20110101983A (en) * | 2010-03-10 | 2011-09-16 | 삼성전자주식회사 | Bipolar memory cell and memory device including the same |
WO2011114725A1 (en) * | 2010-03-19 | 2011-09-22 | パナソニック株式会社 | Nonvolatile memory element, production method therefor, design support method therefor, and nonvolatile memory device |
JP4838399B2 (en) * | 2010-03-30 | 2011-12-14 | パナソニック株式会社 | Nonvolatile memory device and method of writing to nonvolatile memory device |
WO2011132423A1 (en) | 2010-04-21 | 2011-10-27 | パナソニック株式会社 | Non-volatile storage device and method for manufacturing the same |
JP5436669B2 (en) | 2010-07-01 | 2014-03-05 | パナソニック株式会社 | Nonvolatile memory element and manufacturing method thereof |
JP2012069217A (en) * | 2010-09-24 | 2012-04-05 | Toshiba Corp | Nonvolatile semiconductor memory device |
CN103222055B (en) | 2010-10-08 | 2016-06-22 | 松下知识产权经营株式会社 | Non-volatile memory device and manufacture method thereof |
WO2012056689A1 (en) | 2010-10-29 | 2012-05-03 | パナソニック株式会社 | Nonvolatile memory device |
US9214628B2 (en) | 2010-12-03 | 2015-12-15 | Panasonic Intellectual Property Management Co., Ltd. | Nonvolatile memory element, nonvolatile memory device, and manufacturing method for the same |
JP5380611B2 (en) | 2011-02-02 | 2014-01-08 | パナソニック株式会社 | Nonvolatile memory element data reading method and nonvolatile memory device |
US9349445B2 (en) | 2011-09-16 | 2016-05-24 | Micron Technology, Inc. | Select devices for memory cell applications |
US9142767B2 (en) * | 2011-09-16 | 2015-09-22 | Micron Technology, Inc. | Resistive memory cell including integrated select device and storage element |
WO2013054515A1 (en) | 2011-10-12 | 2013-04-18 | パナソニック株式会社 | Non-volatile semiconductor storage device and method of manufacture thereof |
US9082971B2 (en) | 2012-02-20 | 2015-07-14 | Panasonic Intellectual Property Management Co., Ltd. | Nonvolatile memory device and method for manufacturing the same |
JP5367198B1 (en) | 2012-03-15 | 2013-12-11 | パナソニック株式会社 | Variable resistance nonvolatile memory device |
JP5450912B1 (en) * | 2012-06-04 | 2014-03-26 | パナソニック株式会社 | Method for driving nonvolatile semiconductor device |
JP5966150B2 (en) | 2012-07-31 | 2016-08-10 | パナソニックIpマネジメント株式会社 | Nonvolatile memory element driving method and nonvolatile memory device |
JP2014103326A (en) | 2012-11-21 | 2014-06-05 | Panasonic Corp | Nonvolatile memory element and manufacturing method thereof |
CN103066206B (en) * | 2012-12-25 | 2016-03-23 | 清华大学 | A kind of resistive formula memory cell and forming method thereof |
JP6201151B2 (en) | 2013-03-18 | 2017-09-27 | パナソニックIpマネジメント株式会社 | Nonvolatile memory device and manufacturing method thereof |
US9246087B1 (en) * | 2014-11-24 | 2016-01-26 | Intermolecular, Inc. | Electron barrier height controlled interfaces of resistive switching layers in resistive random access memory cells |
JP6587188B2 (en) * | 2015-06-18 | 2019-10-09 | パナソニックIpマネジメント株式会社 | Random number processing apparatus, integrated circuit card, and random number processing method |
JP6617924B2 (en) * | 2015-06-18 | 2019-12-11 | パナソニックIpマネジメント株式会社 | Non-volatile memory device and integrated circuit card having tamper resistance, non-volatile memory device authentication method, and individual identification information generation method |
CN105702287A (en) * | 2016-01-05 | 2016-06-22 | 哈尔滨工业大学深圳研究生院 | RRAM array read/write method and system based on multi-bit resistance state resistance variable device |
US20190181337A1 (en) * | 2016-09-25 | 2019-06-13 | Intel Corporation | Barriers for metal filament memory devices |
US10262715B2 (en) * | 2017-03-27 | 2019-04-16 | Micron Technology, Inc. | Multiple plate line architecture for multideck memory array |
WO2019131137A1 (en) * | 2017-12-28 | 2019-07-04 | Tdk株式会社 | Product-sum calculation device, neuromorphic device, and method for determining malfunction in product-sum calculation device |
US10734447B2 (en) * | 2018-10-22 | 2020-08-04 | International Business Machines Corporation | Field-effect transistor unit cells for neural networks with differential weights |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040159867A1 (en) * | 2002-08-02 | 2004-08-19 | Unity Semiconductor Corporation | Multi-layer conductive memory device |
KR20060083368A (en) * | 2005-01-14 | 2006-07-20 | 광주과학기술원 | Nonvolatile memory device based on resistance switching of oxide & method thereof |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2964964B2 (en) | 1989-03-23 | 1999-10-18 | セイコーエプソン株式会社 | Manufacturing method of liquid crystal display device |
JPH07263647A (en) | 1994-02-04 | 1995-10-13 | Canon Inc | Electronic circuit device |
AU1887000A (en) | 1999-02-17 | 2000-09-04 | International Business Machines Corporation | Microelectronic device for storing information and method thereof |
JP3685670B2 (en) | 1999-12-03 | 2005-08-24 | 松下電器産業株式会社 | DC sputtering equipment |
DE10207300B4 (en) * | 2002-02-21 | 2004-01-29 | Infineon Technologies Ag | Integrated read-only memory, method for operating such a read-only memory and manufacturing method |
US6917539B2 (en) * | 2002-08-02 | 2005-07-12 | Unity Semiconductor Corporation | High-density NVRAM |
JP2004228355A (en) | 2003-01-23 | 2004-08-12 | Seiko Epson Corp | Insulating film substrate, method and apparatus for manufacturing the same, electro-optical device and method for manufacturing the same |
JP2004342277A (en) * | 2003-05-19 | 2004-12-02 | Sharp Corp | Semiconductor memory device, its driving method, and portable electronic equipment |
US6927120B2 (en) | 2003-05-21 | 2005-08-09 | Sharp Laboratories Of America, Inc. | Method for forming an asymmetric crystalline structure memory cell |
KR100773537B1 (en) | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | Nonvolatile memory device composing one switching device and one resistant material and method of manufacturing the same |
JP4701427B2 (en) | 2004-04-28 | 2011-06-15 | パナソニック株式会社 | Switching element and array type functional element using the same |
US6972985B2 (en) * | 2004-05-03 | 2005-12-06 | Unity Semiconductor Corporation | Memory element having islands |
JP2005347468A (en) | 2004-06-02 | 2005-12-15 | Matsushita Electric Ind Co Ltd | Nonvolatile memory |
JPWO2006001349A1 (en) * | 2004-06-23 | 2008-04-17 | 日本電気株式会社 | Semiconductor device with capacitive element |
KR100609699B1 (en) | 2004-07-15 | 2006-08-08 | 한국전자통신연구원 | 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material |
JP4830275B2 (en) | 2004-07-22 | 2011-12-07 | ソニー株式会社 | Memory element |
JP4546842B2 (en) * | 2005-01-20 | 2010-09-22 | シャープ株式会社 | Nonvolatile semiconductor memory device and control method thereof |
JP2006203098A (en) | 2005-01-24 | 2006-08-03 | Sharp Corp | Non-volatile semiconductor storage device |
WO2007114099A1 (en) * | 2006-03-30 | 2007-10-11 | Nec Corporation | Switching device and method for manufacturing switching device |
JP2008108807A (en) | 2006-10-24 | 2008-05-08 | Epson Imaging Devices Corp | Nonlinear element, method for fabricating nonlinear element, and electro-optic device |
JP2008205191A (en) * | 2007-02-20 | 2008-09-04 | Toshiba Corp | Nonvolatile semiconductor memory element and nonvolatile semiconductor memory device |
-
2007
- 2007-10-24 KR KR1020087030938A patent/KR101012896B1/en active IP Right Grant
- 2007-10-24 US US12/307,032 patent/US9236381B2/en active Active
- 2007-10-24 EP EP07830485A patent/EP2077580B1/en active Active
- 2007-10-24 JP JP2008544102A patent/JP4527170B2/en active Active
- 2007-10-24 CN CN2007800251559A patent/CN101636840B/en active Active
- 2007-10-24 WO PCT/JP2007/070751 patent/WO2008059701A1/en active Application Filing
-
2008
- 2008-09-16 JP JP2008236577A patent/JP5207894B2/en active Active
-
2012
- 2012-12-28 JP JP2012288753A patent/JP5589054B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040159867A1 (en) * | 2002-08-02 | 2004-08-19 | Unity Semiconductor Corporation | Multi-layer conductive memory device |
KR20060083368A (en) * | 2005-01-14 | 2006-07-20 | 광주과학기술원 | Nonvolatile memory device based on resistance switching of oxide & method thereof |
Non-Patent Citations (2)
Title |
---|
See also references of WO2008059701A1 * |
WEI Z ET AL: "Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism", INTERNATIONAL ELECTRON DEVICES MEETING, 15-17 DECEMBER 2008, SAN FRANCISCO, 15 December 2008 (2008-12-15), pages 1 - 4, XP031434432 * |
Also Published As
Publication number | Publication date |
---|---|
KR101012896B1 (en) | 2011-02-08 |
CN101636840A (en) | 2010-01-27 |
JP2013102181A (en) | 2013-05-23 |
JP5207894B2 (en) | 2013-06-12 |
KR20090024716A (en) | 2009-03-09 |
US20090224224A1 (en) | 2009-09-10 |
JP2009033188A (en) | 2009-02-12 |
JPWO2008059701A1 (en) | 2010-02-25 |
JP5589054B2 (en) | 2014-09-10 |
WO2008059701A1 (en) | 2008-05-22 |
EP2077580B1 (en) | 2011-11-30 |
US9236381B2 (en) | 2016-01-12 |
CN101636840B (en) | 2011-05-25 |
JP4527170B2 (en) | 2010-08-18 |
EP2077580A1 (en) | 2009-07-08 |
WO2008059701A9 (en) | 2009-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2077580A4 (en) | Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element | |
EP2225774A4 (en) | Semiconductor memory device and method for manufacturing same | |
EP2063467A4 (en) | Nonvolatile storage element, its manufacturing method, and nonvolatile semiconductor device using the nonvolatile storage element | |
EP2136398A4 (en) | Semiconductor memory device and method for manufacturing the same | |
TWI351075B (en) | Semiconductor device, embedded memory, and method of fabricating the same | |
TWI366893B (en) | Non-volatile memory device and method for manufacturing the same | |
TWI369760B (en) | Non-volatile semiconductor memory device and method of making the same | |
TWI346954B (en) | Nonvolatile semiconductor memory device | |
EP2186095A4 (en) | Nonvolatile semiconductor memory device | |
EP2234160A4 (en) | Nonvolatile semiconductor storage device, and method for manufacturing the same | |
TWI340486B (en) | Semiconductor memory device | |
EP2232498A4 (en) | Nonvolatile semiconductor memory device | |
TWI349981B (en) | Semiconductor device and manufacturing method thereof | |
TWI365490B (en) | Semiconductor device and method for manufacturing same | |
TWI318002B (en) | Semiconductor device and manufacturing method thereof | |
EP1866964A4 (en) | Memory element, memory device, and semiconductor device | |
TWI319877B (en) | Semiconductor memory device | |
EP2067173A4 (en) | Semiconductor device and manufacturing method thereof | |
EP2040292A4 (en) | Nonvolatile semiconductor memory and its drive method | |
EP2308084A4 (en) | Nonvolatile semiconductor memory device | |
EP2015353A4 (en) | Semiconductor device and method for manufacturing semiconductor device | |
EP2235721A4 (en) | Nonvolatile semiconductor memory device | |
EP2133909A4 (en) | Semiconductor device, and its manufacturing method | |
EP2037496A4 (en) | Semiconductor device and semiconductor manufacturing method | |
EP2219221A4 (en) | Nonvolatile storage device and method for manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20090331 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: FUJII, SATORU Inventor name: SHIMAKAWA, KAZUHIKO Inventor name: OSANO, KOICHI Inventor name: MURAOKA, SHUNSAKU Inventor name: TAKAGI, TAKESHI |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20091012 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 45/00 20060101AFI20091002BHEP Ipc: G11C 13/00 20060101ALI20091002BHEP Ipc: H01L 27/24 20060101ALI20091002BHEP |
|
17Q | First examination report despatched |
Effective date: 20100113 |
|
DAX | Request for extension of the european patent (deleted) | ||
RBV | Designated contracting states (corrected) |
Designated state(s): DE FR GB |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): DE FR GB |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602007019147 Country of ref document: DE Effective date: 20120216 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed |
Effective date: 20120831 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602007019147 Country of ref document: DE Effective date: 20120831 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 9 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 10 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 11 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 12 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: 732E Free format text: REGISTERED BETWEEN 20200618 AND 20200624 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R081 Ref document number: 602007019147 Country of ref document: DE Owner name: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD., N, JP Free format text: FORMER OWNER: PANASONIC CORPORATION, KADOMA-SHI, OSAKA, JP Ref country code: DE Ref legal event code: R082 Ref document number: 602007019147 Country of ref document: DE Representative=s name: WITHERS & ROGERS LLP, DE |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R079 Ref document number: 602007019147 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H01L0045000000 Ipc: H10N0070000000 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20230831 Year of fee payment: 17 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20230911 Year of fee payment: 17 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20230830 Year of fee payment: 17 |