EP2038208A4 - Nanodevice structure and fabricating method thereof - Google Patents

Nanodevice structure and fabricating method thereof

Info

Publication number
EP2038208A4
EP2038208A4 EP20070747074 EP07747074A EP2038208A4 EP 2038208 A4 EP2038208 A4 EP 2038208A4 EP 20070747074 EP20070747074 EP 20070747074 EP 07747074 A EP07747074 A EP 07747074A EP 2038208 A4 EP2038208 A4 EP 2038208A4
Authority
EP
European Patent Office
Prior art keywords
fabricating method
nanodevice
nanodevice structure
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP20070747074
Other languages
German (de)
French (fr)
Other versions
EP2038208A1 (en
Inventor
Chang-Soo Han
Jin-Won Song
Yeo-Hwan Yoon
Eung-Sug Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Institute of Machinery and Materials KIMM
Original Assignee
Korea Institute of Machinery and Materials KIMM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Institute of Machinery and Materials KIMM filed Critical Korea Institute of Machinery and Materials KIMM
Publication of EP2038208A1 publication Critical patent/EP2038208A1/en
Publication of EP2038208A4 publication Critical patent/EP2038208A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0006—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/04—Cathode electrodes
    • H01J2329/0407—Field emission cathodes
    • H01J2329/0439—Field emission cathodes characterised by the emitter material
    • H01J2329/0444—Carbon types
    • H01J2329/0455—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
EP20070747074 2006-07-07 2007-06-22 Nanodevice structure and fabricating method thereof Withdrawn EP2038208A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060063840A KR100797093B1 (en) 2006-07-07 2006-07-07 Nano device structure and fabricating method thereof
PCT/KR2007/003043 WO2008004777A1 (en) 2006-07-07 2007-06-22 Nanodevice structure and fabricating method thereof

Publications (2)

Publication Number Publication Date
EP2038208A1 EP2038208A1 (en) 2009-03-25
EP2038208A4 true EP2038208A4 (en) 2014-07-23

Family

ID=38894716

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20070747074 Withdrawn EP2038208A4 (en) 2006-07-07 2007-06-22 Nanodevice structure and fabricating method thereof

Country Status (4)

Country Link
EP (1) EP2038208A4 (en)
JP (1) JP2009543327A (en)
KR (1) KR100797093B1 (en)
WO (1) WO2008004777A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101170806B1 (en) * 2010-02-12 2012-08-02 고려대학교 산학협력단 Method for selective patterning of polyethyleneimine and a semiconductor device manufactured by using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050122351A1 (en) * 2003-10-28 2005-06-09 Semiconductor Energy Laboratory Co., Ltd Liquid droplet ejection system and control program of ejection condition of compositions
US20060110847A1 (en) * 2004-11-19 2006-05-25 Masaaki Fujimori Field effect transistor and its manufacturing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100658667B1 (en) * 2001-02-16 2006-12-15 삼성에스디아이 주식회사 Method of making triode type field emission display device with carbon emission layer
US6955767B2 (en) * 2001-03-22 2005-10-18 Hewlett-Packard Development Company, Lp. Scanning probe based lithographic alignment
KR100465731B1 (en) * 2003-02-11 2005-01-13 엘지전자 주식회사 A spacer manufacturing device of flat display part and the same methode
US20070157873A1 (en) * 2003-09-12 2007-07-12 Hauptmann Jonas R Method of fabrication and device comprising elongated nanosize elements
TWI221341B (en) 2003-09-18 2004-09-21 Ind Tech Res Inst Method and material for forming active layer of thin film transistor
US7226819B2 (en) 2003-10-28 2007-06-05 Semiconductor Energy Laboratory Co., Ltd. Methods for forming wiring and manufacturing thin film transistor and droplet discharging method
KR100757519B1 (en) * 2005-01-27 2007-09-11 한국화학연구원 Fabrication Method of Electrode for Plasma Display Panel Using Precoating Solution
KR20060131551A (en) * 2005-06-16 2006-12-20 엘지.필립스 엘시디 주식회사 Electrode structure of flexible display device and method of fabrication thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050122351A1 (en) * 2003-10-28 2005-06-09 Semiconductor Energy Laboratory Co., Ltd Liquid droplet ejection system and control program of ejection condition of compositions
US20060110847A1 (en) * 2004-11-19 2006-05-25 Masaaki Fujimori Field effect transistor and its manufacturing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2008004777A1 *

Also Published As

Publication number Publication date
JP2009543327A (en) 2009-12-03
EP2038208A1 (en) 2009-03-25
KR100797093B1 (en) 2008-01-22
KR20080004912A (en) 2008-01-10
WO2008004777A1 (en) 2008-01-10

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Inventor name: LEE, EUNG-SUG

Inventor name: YOON, YEO-HWAN

Inventor name: SONG, JIN-WON

Inventor name: HAN, CHANG-SOO

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A4 Supplementary search report drawn up and despatched

Effective date: 20140620

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