EP1960309B1 - Method for producing nanostructures on a substrate - Google Patents
Method for producing nanostructures on a substrate Download PDFInfo
- Publication number
- EP1960309B1 EP1960309B1 EP06818093A EP06818093A EP1960309B1 EP 1960309 B1 EP1960309 B1 EP 1960309B1 EP 06818093 A EP06818093 A EP 06818093A EP 06818093 A EP06818093 A EP 06818093A EP 1960309 B1 EP1960309 B1 EP 1960309B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- solution
- nanostructures
- temperature
- drop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Not-in-force
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
Definitions
- the invention relates to a method for producing nanostructures on a substrate.
- the invention relates in particular to the production of nanowires or linear arrangements of nanodots (clusters) and the production of carbon nanotubes directly on a largely arbitrary carrier.
- the invention also relates to the production of nanostructures on silicon wafers, in particular on MEMS or microchips.
- Nanostructures such as nanowires and nanotubes are currently the focus of current research. They represent a class of materials that u. a. due to quantum effects have novel electrical, optical, magnetic and thermodynamic properties. In addition to the primarily academic questions, there is also the problem of reproducible mass production with the simplest possible means for the timely expansion of the field of commercial use of nanostructures.
- wet-chemical production process from aqueous solution, which lead to the desired results at temperatures below 100 C ° and at atmospheric pressure (eg see Law et al., "Nanowire dye-sensitized solar cells", nature materials, 4, 455-459, 2005 and Satoshi et al. "Growth conditions for wurzite zinc oxide film in aqueous solutions", J Mat. Chem, 12, 2002, pages 3773-3778 ).
- wet-chemical methods have other disadvantages. For example, no epitaxial growth on silicon is possible (see J. Phys. Chem. B 2001, 105, 3350-3352 ). In addition, some solvents are also used, which bring a disposal problem with it.
- ZnO zinc oxide
- nanorods and nanotubes can form a large variety of nanostructures.
- versatile applications as optoelectronic devices, lasers, field emission and gas sensor materials are considered (for the fabrication and application of nanotubes and nanorods, see also Advanced Materials 2005, 17, 2477 ).
- substrates such as gallium nitride (GaN) are used or silicon substrates are coated with a so-called “seeding layer", which mostly consists of a ZnO thin film heated at 400 ° C.
- seeding layer which mostly consists of a ZnO thin film heated at 400 ° C.
- CNTs carbon nanotubes
- smart materials are called smart materials. These have their application in fuel cells, bio-gas sensors, field effect transistors.
- the known manufacturing processes arc, laser, CVD, PECVD
- high technical effort high temperature, vacuum, etc.
- An alternative solvothermal synthesis process at low temperature 310 ° C solves this problem ( Wang et al., Nanotechnology 16, 21-23, 2005 ), but the process still needs about 20-40 hours in low yield.
- a third example is water-soluble nanostructures of inorganic materials such as CaC03, BaC03, which are recommended for new applications in biotechnology with unusual mechanical and optical properties.
- the controlled production of such materials is carried out by mixing salts with polymers (biopolymers, see Shu et al., Nature materials 4, 51, 2005 ). Wires of such material, which show a diameter of less than 100 nm, are not yet known.
- nanowires that consist of nanoclusters. It is already known that the arrangement of nanoclusters in 1D, 2D or 3D can lead to new properties that do not occur in disordered clusters and are based on the nearest interaction between the clusters, such as Magnitization Flip (application: data storage) and plasmonic conductivity (Application: optical fiber) (see eg as Sources: nature materials, 2, 229, 2003 or Eur. J. Inorg. Chem. 2455, 2001 ).
- Magnitization Flip application: data storage
- plasmonic conductivity Application: optical fiber
- the 1D arrangement is a complicated process in which typically a template (eg mask, mold) must be used.
- a template eg mask, mold
- This template limits the materials used and may result in disruption of the clusters Nanowire (for example, when removing the template) or its properties (eg, if a nanowire is used as a sensor, then not completely removed template material can reduce the sensitivity).
- the method according to the invention differs from all methods of producing nanostructures known to the person skilled in the art in that it does not rely on a gradual, self-organized formation of these structures from their constituents, as is the case, for example, with epitaxial growth. Rather, a highly unstable state characterized by nonequilibrium reactions forms the starting point of nanowire growth in the process described herein.
- the invention makes use of a natural effect that is not fully understood until now. However, the method gives very good reproducible results and seems to work for a number of different materials, of which only a selection can of course be experimentally verified, but of course this is not intended to limit the invention.
- the Leidenfrost effect seems to play an important role, according to which a drop of water falling on a hot plate floats on a pad of steam and slides, whereby its evaporation is delayed somewhat. The effect occurs when the hotplate has a temperature beyond the Leidenfrost temperature which is slightly above 200 ° C at normal pressure for water. Regardless of the question of the reaction kinetics, which is currently unclear, it is extremely advantageous, if not necessary, to exploit the Leidenfrost effect when dripping on the material solution. Because of the sliding of the droplet over the substrate, a uniform distribution of the deposited nanostructures is favored and possibly also covers a larger area.
- Zinc oxide nanorods can be seen, which are formed directly by the evaporation of drops of an aqueous 0.02 M zinc acetate solution.
- the heated silicon substrate does not require a "seeding layer" for this purpose and no catalysts are used.
- the structures shown are formed after 2-3 minutes of processing time and cover the substrate over a large area in the area previously wetted by the drop surface.
- ZnO is formed from the zinc ions of the solution and presumably the oxygen in the ambient air. Heating the substrate only at temperatures between 25 and 200 ° C, so no nanostructures, but only a thin film.
- a preferred embodiment of the invention consists in the addition of catalyst particles, preferably of noble metal nanoparticles. More preferably, gold particles having a diameter of about 20 nm are added to the nanostructured aqueous solution described above.
- the gold particles themselves are commercially available in solution and stabilized by organic and inorganic additives as a solution from Aldrich.
- the stabilization prevents the agglomeration of the particles and is indispensable.
- the carbonaceous stabilizers also tend more or less inevitably to the formation of nanostructures when using the method according to the invention.
- Fig. 2 shows zinc oxide nanotubes that form after a few minutes due to the addition of catalyst particles (ZnO solution with Aldrich solution in the ratio 1: 3).
- Fig. 2 below is a partial enlargement of the upper image to more clearly illustrate the tube structure. Again, the result shown can not be achieved if the substrate is heated below 200 ° C or heated only gradually.
- the gold mesh can be produced, for example, with a solution of 0.03 M ZnO in 0.1 M NaOH while admixing the Aldrich solution in a volume ratio of 1: 6.
- Fig. 4 see transmission electron micrographs after using the same ZnO / NAOH / Aldrich solution in which a network of "multiwall carbon nanotubes" (MWCNT) can be seen (note the detail enlargements).
- MWCNT multiwall carbon nanotubes
- the carbon comes from the stabilizer of the Aldrich solution in the examples.
- the MWCNT can also be generated quite deliberately, for example when a pure carbonate solution drips onto the substrate.
- Fig. 4 shows crystals.
- the nanowires grow from the in Fig. 4 also shown crystals.
- the nanowires continue to grow, increasing the coverage density and decreasing the wire thickness. This seems to rejuvenate the existing wires, and new smaller diameter ones are formed.
- the wire diameters vary between initially 100 nm and later about 60 nm, while the length increases from about 3 ⁇ m after 15 minutes to 25 ⁇ m after one hour. Thereafter, a further growth of the wires is no longer discernible, although it does not have to come to a complete halt.
- Fig. 5 shows the nanowires growing away from the substrate at different stages of their formation.
- the times of the snapshots after applying the drops of solution are given next to the respective pictures.
- the vertical wires are inorganic and water soluble. They consist of carbon (from the stabilizer of the Aldrich solution), sodium (from the caustic soda to dissolve the ZnO) and oxygen (presumably from the ambient air).
- a very advantageous embodiment of the method according to the invention consists in tilting the substrate against the horizontal before or immediately after the application of the solution drop.
- nanostructures By tilting the substrate, nanostructures can be deposited relatively selectively along a preferred direction (the slope gradient).
- the material to be formed or deposited is dissolved or suspended in water as before.
- substrates are heated to temperatures above 200 ° C.
- droplets with diameters of about 1-2 mm are brought to the surface.
- the substrate is tilted, the tilt angle now determining the drop drainage speed. Due to the Leidenfrost effect, the droplet floats on a vapor cushion.
- nanodots are deposited on the substrate along the direction of movement during the drop run. This happens at relatively regular intervals as a function of the running speed of the drop, that is to say from the set tilt angle. If the clusters are sufficiently dense, they will in effect form a nanowire, e.g. electrically conduct. Molecules can accumulate between the clusters, which could be useful in chemical sensor applications. However, there is also a sorting effect with regard to the cluster size: the largest or heaviest clusters are first deposited, the smaller ones later. Thus, along the direction of travel of the droplet, the cluster size distribution changes from large to small, exhibiting locally very small variation, i.e., small variations. Extensive sections of wire consist of roughly equal sized clusters.
- the dumping landfill is in obvious contrast to the well-known lotus effect, in which weakly adhering material is collected by a passing water droplet and taken with it, which is why it could deserve the name "anti-lotus effect”.
- the temperature of the substrate above 200 ° C for enforcing the Leidenfrost effect also plays a major role here, since the sliding of the droplet on its own steam pad apparently has a favorable effect on the uniform distribution of the later detectable distribution of nanodots.
- Fig. 6 An example of the application of the anti-lotus effect, ie the combination of Leidenfrost effect, coffee-stain effect and tilting is in Fig. 6 to see.
- a drop of zinc acetate / water (just like ZnO nanorods) is used.
- the top picture shows parallel nanowires consisting of nanorods.
- the bottom shows a nanowire of nanodots separated from each other. In both cases, the nanostructures emerge within a few seconds after the ZnO solution drips.
- Another example (not shown) relates to the preparation of silver structures. It is known that the thermal decomposition of AgNO 3 (silver nitrate) to metallic silver takes place at 180 ° C, so that fabrication and arrangement of the nanoparticles in a 1D array can be realized in one step.
- AgNO 3 silver nitrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Die Erfindung betrifft ein Verfahren zur Herstellung von Nanostrukturen auf einem Substrat. Die Erfindung betrifft insbesondere die Herstellung von Nanodrähten bzw. lineare Anordnungen von Nanodots (Cluster) sowie das Erzeugen von Kohlenstoff-Nanoröhren unmittelbar auf einem weitgehend beliebigen Träger. Die Erfindung betrifft auch das Erzeugen von Nanostrukturen auf Silizium-Wafern, insbesondere auf MEMS oder Mikrochips.The invention relates to a method for producing nanostructures on a substrate. The invention relates in particular to the production of nanowires or linear arrangements of nanodots (clusters) and the production of carbon nanotubes directly on a largely arbitrary carrier. The invention also relates to the production of nanostructures on silicon wafers, in particular on MEMS or microchips.
Nanostrukturen wie Nanodrähte und Nanoröhren stehen zurzeit im Fokus aktueller Forschung. Sie repräsentieren eine Klasse von Materialen, die u. a. aufgrund von Quanteneffekten neuartige elektrische, optische, magnetische und thermodynamische Eigenschaften aufweisen. Neben den vorrangig akademischen Fragen stellt sich dabei auch das Problem der reproduzierbaren Massenfertigung mit möglichst einfachen Mitteln, um zeitnah den Bereich der gewerblichen Nutzung von Nanostrukturen auszubauen.Nanostructures such as nanowires and nanotubes are currently the focus of current research. They represent a class of materials that u. a. due to quantum effects have novel electrical, optical, magnetic and thermodynamic properties. In addition to the primarily academic questions, there is also the problem of reproducible mass production with the simplest possible means for the timely expansion of the field of commercial use of nanostructures.
Zwar sind einfache Verfahren zur Erzeugung von Nanopartikelaggregaten bekannt (z.B. siehe
Zur Reduktion des Aufwandes kennt der Fachmann auch nasschemischen Herstellungsverfahren aus wässriger Lösung, die bei Temperaturen unter 100 C° und bei Atmosphärendruck zu den gewünschten Ergebnissen führen (z.B. siehe
Beispielsweise ist man heute sehr an der Herstellung von Zinkoxid (ZnO) Nanostrukturen, etwa Nanostäbchen und Nanoröhren, interessiert. Dies ist schon deshalb der Fall, weil ZnO als Halbleiter eine große Variation an Nanostrukturen, bilden kann. Überdies werden vielseitige Anwendungen als optoelektronische Bauteile, Laser, Feldemissions- und Gassensor-Materialien erwogen (zur Herstellung und Anwendung von Nanoröhren und Nanostäbchen siehe auch
Ein anderes Beispiel sind die Kohlenstoff Nanoröhren (Carbon Nano Tubes, CNT), die als "smart material" bezeichnet werden. Diese haben ihre Anwendung u. a. in Brennstoffzellen, Bio-Gas Sensoren, Feldeffekt-Transistoren. Auch hier weisen die bekannten Herstellungsverfahren (Lichtbogen, Laser, CVD, PECVD) einen hohen technischen Aufwand auf (hohe Temperatur, Vakuum, etc.). Ein alternatives, solvothermales Syntheseverfahren bei Niedrigtemperatur (310C°) löst zwar dieses Problem (
Ein drittes Beispiel sind wasserlösliche Nanostrukturen aus anorganischen Materialen wie etwa CaC03, BaC03, die sich mit ungewöhnlichen mechanischen und optischen Eigenschaften für neue Anwendungen in der Biotechnologie empfehlen. Die kontrollierte Herstellung solcher Materialen erfolgt durch Mischung von Salzen mit Polymeren (Biopolymeren, siehe
Ein noch wichtigeres Beispiel ist die Herstellung von Nanodrähten, die aus Nanoclustern bestehen. Es ist bereits bekannt, dass die Anordnung von Nanoclustern in 1D, 2D oder 3D zur neuen Eigenschaften führen kann, die bei ungeordneten Clustern nicht auftreten und die auf der Nächstnachbarwechselwirkung zwischen den Clustern beruhen, wie etwa Magnitization Flip (Anwendung: Datenspeicherung) und plasmonische Leitfähigkeit (Anwendung: Lichtleiter) (vgl. z.B. als
Im Gegensatz zur bekannten und einfachen Anordnung von Nanoteilchen in 2D und 3D ist die 1D Anordnung ein komplizierter Vorgang, bei dem typischerweise ein Template (z.B. Maske, Gießform) verwendet werden muss. Dieses Template limitiert die verwendeten Materialien und fünrt möglicherweise zu Störungen des aus den Clustern entstehenden Nanodrahtes (etwa bei der Entfernung des Templates) oder seinen Eigenschaften (z.B. wenn ein Nanodraht als Sensor benutzt wird, so kann nicht vollständig entferntes Template-Material die Sensitivität herabsetzen).In contrast to the known and simple arrangement of nanoparticles in 2D and 3D, the 1D arrangement is a complicated process in which typically a template (eg mask, mold) must be used. This template limits the materials used and may result in disruption of the clusters Nanowire (for example, when removing the template) or its properties (eg, if a nanowire is used as a sensor, then not completely removed template material can reduce the sensitivity).
So haben die verschiedenen Prozesse, die benutzt werden um Nanostrukturen herzustellen, nicht selten gemeinsame Nachteile wie Aufwendigkeit, hohe Kosten, geringe Geschwindigkeit.Thus, the various processes used to make nanostructures often have common drawbacks such as complexity, high cost, low speed.
Daher ist es die Aufgabe der Erfindung, ein Verfahren zur Erzeugung von Nanostrukturen auf einem weitgehend beliebigen Substrat anzugeben, das ohne teures Equipment schon nach sehr kurzer Prozessdauer zu großer Ausbeute und großflächiger Bedeckung führt.It is therefore the object of the invention to specify a method for producing nanostructures on a largely arbitrary substrate, which leads to high yield and large-area coverage even after a very short process time without expensive equipment.
Die Aufgabe wird gelöst durch ein Verfahren mit den Merkmalen des Hauptanspruchs. Die Unteransprüche geben vorteilhafte Ausgestaltungen der Erfindung an.The object is achieved by a method having the features of the main claim. The subclaims indicate advantageous embodiments of the invention.
Das erfindungsgemäße Verfahren unterscheidet sich von allen dem Fachmann bekannten Verfahren zur Erzeugung von Nanostrukturen dadurch, dass es nicht auf einer allmählichen, selbstorganisierten Bildung dieser Strukturen aus ihren Konstituenten beruht, wie dies etwa bei epitaktischem Wachstum der Fall ist. Vielmehr bildet ein hoch instabiler, von Nichtgleichgewichtsreaktionen gekennzeichneter Zustand den Ausgangspunkt des Nanodrahtwachstums im hier beschriebenen Verfahren. Die Erfindung macht sich einen Natureffekt zunutze, der bis jetzt nicht völlig verstanden ist. Gleichwohl liefert das Verfahren sehr gut reproduzierbare Resultate und scheint für eine Reihe von verschiedenen Materialien zu funktionieren, von denen naturgemäß nur eine Auswahl experimentell überprüft werden kann, was aber die Erfindung natürlich nicht einschränken soll.The method according to the invention differs from all methods of producing nanostructures known to the person skilled in the art in that it does not rely on a gradual, self-organized formation of these structures from their constituents, as is the case, for example, with epitaxial growth. Rather, a highly unstable state characterized by nonequilibrium reactions forms the starting point of nanowire growth in the process described herein. The invention makes use of a natural effect that is not fully understood until now. However, the method gives very good reproducible results and seems to work for a number of different materials, of which only a selection can of course be experimentally verified, but of course this is not intended to limit the invention.
Das erfindungsgemäße Verfahren umfasst im Wesentlichen die Schritte:
- 1. Einbringen eines eine Nanostruktur bildenden. Materiales in Wasser zur Erzeugung einer Lösung.
- 2. Gegebenenfalls Zugabe von Katalysator-Partikeln in die Lösung.
- 3. Aufheizen des Substrats auf Temperaturen oberhalb 200 °C.
- 4. Zugabe einzelner Tropfen der Lösung auf das geheizte Substrat.
- 5. Es erfolgt ein Verdampfen der Tropfen unter Nutzung des Leidenfrost-Effekts, bei dem sich Nanostrukturen bilden und auf dem Substrat abgeschieden werden.
- 6. Gegebenenfalls wird das Substrat geneigt, so dass ein der Schwerkraft folgender, bewegter Tropfen Nanostrukturen entlang seines Weges deponiert.
- 1. Introduction of a nanostructure forming. Material in water to produce a solution.
- 2. Optionally, adding catalyst particles to the solution.
- 3. heating the substrate to temperatures above 200 ° C.
- 4. Add individual drops of the solution to the heated substrate.
- 5. Evaporation of the drops takes place using the Leidenfrost effect, in which nanostructures form and are deposited on the substrate.
- 6. Optionally, the substrate is tilted so that one of the gravitational forces of following, moving droplets deposit nanostructures along its path.
Es scheint für die Bildung der Nanostrukturen notwendig zu sein, dass die Lösung lokal explosionsartig verdampft. Dabei scheint der Leidenfrost-Effekt eine wichtige Rolle zu spielen, demzufolge ein Wassertropfen, der auf eine Heizplatte fällt, auf einem Wasserdampfpolster schwebt und gleitet, wodurch seine Verdampfung etwas verzögert wird. Der Effekt tritt auf, wenn die Heizplatte eine Temperatur jenseits der Leidenfrost-Temperatur aufweist, die bei Normaldruck für Wasser etwas oberhalb von 200°C liegt. Unabhängig von der Frage nach der Reaktionskinetik, die derzeit ungeklärt bleibt, ist es äußerst vorteilhaft, wenn nicht sogar notwendig, den Leidenfrost-Effekt beim Auftropfen der Material-Lösung auszunutzen. Denn durch das Gleiten des Tropfens über das Substrat wird eine gleichmäßige Verteilung der abgeschiedenen Nanostrukturen begünstigt und ggf. auch eine größere Fläche bedeckt.It seems necessary for the formation of the nanostructures that the solution evaporates locally explosively. In this case, the Leidenfrost effect seems to play an important role, according to which a drop of water falling on a hot plate floats on a pad of steam and slides, whereby its evaporation is delayed somewhat. The effect occurs when the hotplate has a temperature beyond the Leidenfrost temperature which is slightly above 200 ° C at normal pressure for water. Regardless of the question of the reaction kinetics, which is currently unclear, it is extremely advantageous, if not necessary, to exploit the Leidenfrost effect when dripping on the material solution. Because of the sliding of the droplet over the substrate, a uniform distribution of the deposited nanostructures is favored and possibly also covers a larger area.
Die experimentellen Befunde beweisen, dass sich die ersten Nanostruktur-Gebilde großflächig - im Bereich des aufgebrachten Tropfens - innerhalb weniger Sekunden gebildet haben. Dabei ist besonders hervorzuheben, dass dieselben Verfahrensschritte zur Erzeugung sehr verschiedener Strukturen, die sich z. T. sogar gleichzeitig bilden, dienen können. Die vielfältigen Erzeugnisse des erfindungsgemäßen Verfahrens sollen im Folgenden anhand von Rasterelektronenmikroskop-Aufnahmen illustriert und näher erläutert werden.The experimental results prove that the first nanostructure structures have formed over a large area - in the area of the deposited drop - within a few seconds. It is particularly noteworthy that the same process steps to produce very different structures that z. T. even at the same time, can serve. The various products of the method according to the invention will be illustrated below with reference to scanning electron micrographs and explained in more detail.
In
Eine bevorzugte Ausgestaltung der Erfindung besteht in der Zugabe von Katalysator-Partikeln, vorzugsweise von Edelmetall-Nanopartikeln. Besonders bevorzugt werden Goldpartikel mit einem Durchmesser um 20 nm zur oben beschriebenen wässrigen Lösung mit Nanostruktur-Material gegeben.A preferred embodiment of the invention consists in the addition of catalyst particles, preferably of noble metal nanoparticles. More preferably, gold particles having a diameter of about 20 nm are added to the nanostructured aqueous solution described above.
Die Goldpartikel selbst sind in gelöster und durch organische wie auch anorganische Zusätze stabilisierter Form als Lösung von der Firma Aldrich kommerziell erhältlich. Die Stabilisierung verhindert die Agglomeration der Partikel und ist unverzichtbar. Wie sich zeigt, tendieren auch die kohlenstoffhaltigen Stabilisatoren mehr oder weniger unvermeidlich zur Bildung von Nanostrukturen bei Nutzung des erfindungsgemäßen Verfahrens.The gold particles themselves are commercially available in solution and stabilized by organic and inorganic additives as a solution from Aldrich. The stabilization prevents the agglomeration of the particles and is indispensable. As it turns out, the carbonaceous stabilizers also tend more or less inevitably to the formation of nanostructures when using the method according to the invention.
Ein interessanter Nebeneffekt der Beimengung der Katalysatorpartikel betrifft den Verbleib des Goldes auf dem Substrat. Das Gold kann beim Entfleuchen des Wassers von der Heizplatte nicht entkommen, wird aber scheinbar nicht ohne weiteres in die bisher genannten Nanostrukturen eingebaut. Vielmehr findet man, dass das Gold, selbst ein fraktal anmutendes, aber doch gleichmäßig verteiltes Goldnetz auf dem Substrat bildet, das noch unter anderen Nanostrukturen (hier: abstehende Drähte, s. u.) angeordnet ist, wie
In
Lässt man das Substrat nach dem Betropfen mit der zuvor genannten Lösung weiterhin beheizt unter Raumluft ruhen, so wachsen abstehende Drähte (Büschel) von den in
Es sollte besonders darauf hingewiesen werden, dass in den bisher genannten Beispielen alle Nanostrukturen unmittelbar aus Ionen in Lösung entstanden sind (ausgenommen das fraktale Goldnetz, welches sich aus Goldkolloiden bildet). Es besteht also keine Notwendigkeit, vorab Nanopartikel in die Lösung zu geben, um diese auf dem Substrat abzulegen. Dies ist ein wesentlicher Unterschied zur herkömmlichen Deponierung z.B. von Kohlenstoff-Nanoröhren, die ansonsten zuvor in Pulverform vorliegen müssen. Gleichwohl kann das erfindungsgemäße Verfahren natürlich auch unter Beimengung von Nanopartikeln zur wässrigen Lösung durchgeführt werden, die danach aufgetropft wird.It should be emphasized that in the examples given above, all nanostructures have been formed directly from ions in solution (except for the fractal gold mesh, which is formed from gold colloids). Thus, there is no need to pre-populate nanoparticles into the solution to deposit them on the substrate. This is a significant difference from conventional landfill e.g. of carbon nanotubes, which otherwise have to be in powder form before. Nevertheless, the process according to the invention can of course also be carried out with the addition of nanoparticles to the aqueous solution, which is then added dropwise.
Eine sehr vorteilhafte Ausgestaltung des erfindungsgemäßen Verfahrens besteht im Verkippen des Substrats gegen die Horizontale vor oder unmittelbar nach dem Aufbringen des Lösungstropfens.A very advantageous embodiment of the method according to the invention consists in tilting the substrate against the horizontal before or immediately after the application of the solution drop.
Durch das. Verkippen des Substrates können Nanostrukturen relativ gezielt entlang einer Vorzugsrichtung (dem Neigungsgradienten) deponiert werden. Das zu bildende oder zu deponierende Material wird wie zuvor in Wasser gelöst bzw. suspendiert. Wie oben werden Substrate auf Temperaturen oberhalb 200 °C erhitzt. Dann werden Tröpfchen mit Durchmessern von ca. 1-2 mm auf die Oberfläche gebracht. Im Unterschied zum Bisherigen wird das Substrat verkippt, wobei der Kippwinkel nun die Tropfenablaufgeschwindigkeit bestimmt. Durch den Leidenfrost-Effekt schwebt auch hier das Tröpfchen auf einem Dampfpolster.By tilting the substrate, nanostructures can be deposited relatively selectively along a preferred direction (the slope gradient). The material to be formed or deposited is dissolved or suspended in water as before. As above, substrates are heated to temperatures above 200 ° C. Then droplets with diameters of about 1-2 mm are brought to the surface. In contrast to the previous one, the substrate is tilted, the tilt angle now determining the drop drainage speed. Due to the Leidenfrost effect, the droplet floats on a vapor cushion.
Durch Abgabe von Material aus dem Tropfen, die überwiegend am Tropfenrand stattfindet ("coffee stain effect"), werden Nanodots (Cluster) während des Tropfenlaufs entlang der Bewegungsrichtung auf dem Substrat abgelegt. Dies geschieht in relativ regelmäßigen Abständen in Abhängigkeit von der Laufgeschwindigkeit des Tropfens, mithin also vom eingestellten Kippwinkel. Liegen die Cluster ausreichend dicht, bilden sie faktisch einen Nanodraht, der z.B. elektrisch leiten kann. Zwischen den Clustern können sich Moleküle anlagern, was bei Anwendungen als chemischer Sensor zum Tragen kommen könnte. Es zeigt sich aber auch ein Sortierungseffekt hinsichtlich der Clustergröße: die größten bzw. schwersten Cluster werden zuerst deponiert, die kleineren erst später. Entlang der Laufrichtung der des Tropfens ändert sich also die Clustergrößenverteilung von groß nach klein, wobei sie lokal recht geringe Schwankung zeigt, d.h. ausgedehnte Drahtabschnitte bestehen aus etwa gleich großen Clustern.By delivering material from the drop, which takes place predominantly at the edge of the drop ("coffee stain effect"), nanodots (clusters) are deposited on the substrate along the direction of movement during the drop run. This happens at relatively regular intervals as a function of the running speed of the drop, that is to say from the set tilt angle. If the clusters are sufficiently dense, they will in effect form a nanowire, e.g. electrically conduct. Molecules can accumulate between the clusters, which could be useful in chemical sensor applications. However, there is also a sorting effect with regard to the cluster size: the largest or heaviest clusters are first deposited, the smaller ones later. Thus, along the direction of travel of the droplet, the cluster size distribution changes from large to small, exhibiting locally very small variation, i.e., small variations. Extensive sections of wire consist of roughly equal sized clusters.
Die Kipp-Deponierung steht in einem offensichtlichen Gegenverhältnis zum bekannten Lotus-Effekt, bei dem schwach haftendes Material von einem vorbeilaufenden Wassertropfen aufgesammelt und mitgenommen wird, weshalb sie die Bezeichnung "Anti-Lotus-Effekt" verdienen könnte.The dumping landfill is in obvious contrast to the well-known lotus effect, in which weakly adhering material is collected by a passing water droplet and taken with it, which is why it could deserve the name "anti-lotus effect".
Die Temperatur des Substrats oberhalb von 200 °C zur Erzwingung des Leidenfrost-Effekts spielt auch hier eine große Rolle, da sich das Gleiten des Tropfens auf seinem eigenen Wasserdampfkissen offenbar günstig auf die gleichmäßige Verteilung der im Nachhinein feststellbaren Verteilung der Nanodots auswirkt.The temperature of the substrate above 200 ° C for enforcing the Leidenfrost effect also plays a major role here, since the sliding of the droplet on its own steam pad apparently has a favorable effect on the uniform distribution of the later detectable distribution of nanodots.
Ein Beispiel für die Anwendung des Anti-Lotus-Effektes, also die Kombination von Leidenfrost-Effekt, Coffee-Stain-Effekt und Verkippung ist in
Ein weiteres Beispiel (nicht dargestellt) betrifft die Herstellung von Silberstrukturen. Es ist bekannt, dass die thermische Dekomposition von AgNO3 (Silbernitrat) zu metallischem Silber bei 180 °C stattfindet, so dass sich in einem Schritt Fabrikation und Anordnung der Nanoteilchen in einem 1D Array realisieren lassen.Another example (not shown) relates to the preparation of silver structures. It is known that the thermal decomposition of AgNO 3 (silver nitrate) to metallic silver takes place at 180 ° C, so that fabrication and arrangement of the nanoparticles in a 1D array can be realized in one step.
Anscheinend lassen sich viele verschiedene Materialien auf diesem Weg und ohne Template einfach und schnell herstellen. Forschungsarbeiten zum Ausloten des Potenzials der Erfindung stehen noch am Anfang. Klar ist bislang aber, dass die Schritte 1, 3, 4 und 5 des eingangs beschriebenen Verfahrens die notwendige Voraussetzung für eine noch weitgehend unverstandene Reaktionskinetik bei der Bildung von Nanostrukturen auf Substraten sind, wobei von den Substraten selbst nur verlangt werden muss, dass sie Temperaturen etwas oberhalb von 200 °C standhalten. Der Einfluss der Oberflächenrauheit des Substrates bleibt noch zu untersuchen. Bei den hier präsentierten Experimenten wurden monokristalline Silizium-Wafer ggf. mit SiO2-Bedeckungsschicht verwendet.Apparently, many different materials can be produced easily and quickly in this way and without a template. Research to explore the potential of the invention is still in its infancy. However, it has been clear so far that steps 1, 3, 4 and 5 of the process described at the outset are the necessary prerequisite for a still largely unrecognized reaction kinetics in the formation of nanostructures on substrates, whereby the substrates themselves only have to be required to have temperatures withstand slightly above 200 ° C. The influence of the surface roughness of the substrate remains to be investigated. In the experiments presented here, monocrystalline silicon wafers were possibly used with an SiO 2 covering layer.
Claims (6)
- A method for producing nanostructures on a substrate,
characterized in that
a solution of nanostructure forming material in water is dripped onto said substrate at a temperature above the temperature at which a drop of the solution is initially suspended on a vapor cushion after being applied by dripping onto the substrate, with nanostructures being formed when the drops evaporate. - The method of claim 1, characterized in that the temperature of the substrate is adjusted to above 200 °C.
- The method of one of the preceding claims, characterized in that the substrate is tilted against the horizontal plane before or immediately after having been dripped onto said substrate.
- The method of one of the preceding claims, characterized in that the substrate is still heated between several minutes and a few hours after evaporation of the drop, so that distant nanowires continue growing.
- The method of one of the preceding claims, characterized in that catalytic nanoparticles of noble metal are admixed to the solution.
- The method of claim 5, characterized in that gold particles with a diameter of about 20 nm are admixed to the solution.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005060407A DE102005060407B3 (en) | 2005-12-15 | 2005-12-15 | Nanostructure production method in substrate used in microelectromechanical system (MEMS) or microchips, involves making drops of solution for nanostructure formation float on substrate, and heating substrate to make drops evaporate |
PCT/DE2006/002066 WO2007076745A1 (en) | 2005-12-15 | 2006-11-24 | Method for producing nanostructures on a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1960309A1 EP1960309A1 (en) | 2008-08-27 |
EP1960309B1 true EP1960309B1 (en) | 2010-01-06 |
Family
ID=37670262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06818093A Not-in-force EP1960309B1 (en) | 2005-12-15 | 2006-11-24 | Method for producing nanostructures on a substrate |
Country Status (5)
Country | Link |
---|---|
US (1) | US7914850B2 (en) |
EP (1) | EP1960309B1 (en) |
AT (1) | ATE454353T1 (en) |
DE (2) | DE102005060407B3 (en) |
WO (1) | WO2007076745A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006038703B4 (en) | 2006-08-18 | 2009-12-17 | Christian-Albrechts-Universität Zu Kiel | Method and apparatus for producing oxide nanoparticles from an oxide particle-forming material |
DE102009029621A1 (en) | 2009-09-21 | 2011-03-24 | Robert Bosch Gmbh | Detection device for detecting gas within operating temperature range of detection device, has electrically conductive metal electrode and rear electrode made of metal or semiconductor material |
US20140178247A1 (en) | 2012-09-27 | 2014-06-26 | Rhodia Operations | Process for making silver nanostructures and copolymer useful in such process |
CN113207235A (en) * | 2021-04-28 | 2021-08-03 | 北京航空航天大学 | Nanometer particle deposition method based on Leidenfrost phenomenon |
CN113181830B (en) * | 2021-04-30 | 2022-11-29 | 湖南师范大学 | Method for rapidly preparing super particles based on Leidenfrost phenomenon |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10106960A (en) * | 1996-09-25 | 1998-04-24 | Sony Corp | Manufacture of quantum thin line |
JP2004315342A (en) * | 2003-03-31 | 2004-11-11 | Japan Science & Technology Agency | HIGH-DENSITY COLUMNAR ZnO CRYSTAL FILM AND PROCESS FOR PRODUCING THE SAME |
-
2005
- 2005-12-15 DE DE102005060407A patent/DE102005060407B3/en not_active Expired - Fee Related
-
2006
- 2006-11-24 DE DE502006005892T patent/DE502006005892D1/en active Active
- 2006-11-24 AT AT06818093T patent/ATE454353T1/en active
- 2006-11-24 EP EP06818093A patent/EP1960309B1/en not_active Not-in-force
- 2006-11-24 WO PCT/DE2006/002066 patent/WO2007076745A1/en active Application Filing
- 2006-11-24 US US12/086,334 patent/US7914850B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1960309A1 (en) | 2008-08-27 |
ATE454353T1 (en) | 2010-01-15 |
US7914850B2 (en) | 2011-03-29 |
DE102005060407B3 (en) | 2007-02-08 |
WO2007076745A1 (en) | 2007-07-12 |
DE502006005892D1 (en) | 2010-02-25 |
US20090269495A1 (en) | 2009-10-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2295617B1 (en) | Method for producing flat size or distance variations in nanostructures on surfaces | |
Yin et al. | Colloidal nanocrystal synthesis and the organic–inorganic interface | |
Li et al. | Semiconductor nanorod liquid crystals and their assembly on a substrate | |
DE102008009365B4 (en) | A method of manufacturing a nonvolatile memory electronic device using nanowire as a charge channel and nanoparticles as a charge trap | |
EP2051936B1 (en) | Method for generating oxidic nanoparticles from a material forming oxide particles | |
EP2748107B1 (en) | Method for producing and aligning nanowires and applications of such a method | |
Rupich et al. | Soft epitaxy of nanocrystal superlattices | |
DE112007002082T5 (en) | One-dimensional metal and metal oxide nanostructures | |
DE102006060366B4 (en) | Process for the preparation of quantum dots covered by a matrix | |
EP1960309B1 (en) | Method for producing nanostructures on a substrate | |
EP2351087A1 (en) | Nanowires on substrate surfaces, method for producing same and use thereof | |
EP3347303A1 (en) | Method for producing structured surfaces | |
EP2909867B1 (en) | Method for deposition of thermoelectric material | |
DE19738184C2 (en) | Process for the production of organic thin films | |
DE10026911B4 (en) | A method for producing a semiconductor superatom and an aggregate thereof | |
Yumnam et al. | Controlled growth of ZnO nanorods via self-assembled monolayer | |
EP2206153B1 (en) | Method for the production of a nanostructure by means of spinodal decrosslinking | |
Suehiro et al. | Electrospray Deposition of {200} Oriented Regular-Assembly BaTiO3 Nanocrystal Films under an Electric Field | |
DE19619287C2 (en) | Process for creating structures from nanoparticles | |
DE19852585B4 (en) | Process for producing at least one thin elongated element | |
DE102005003407B4 (en) | Process for the preparation of colloidal crystals or colloidal particle systems | |
DE102020126553B3 (en) | Process for microstructuring | |
Park et al. | Synthesis and Growth Mechanism of Stable Prenucleated (approximate to 0.8 nm Diameter) PbS Quantum Dots by Medium Energy Ion Scattering Spectroscopy | |
DE10339824B4 (en) | Coating process for the deposition and fixation of particles on a substrate surface and solar cells with funkionellem layer structure | |
Dobrzański et al. | Obtaining copper nanoparticles from nanocomposites of poly (vinyl alcohol) matrix |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20080401 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: PARETKAR, DADICHI Inventor name: ELBAHRI, MADY Inventor name: ADELUNG, RAINER |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
DAX | Request for extension of the european patent (deleted) | ||
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D Free format text: NOT ENGLISH |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REF | Corresponds to: |
Ref document number: 502006005892 Country of ref document: DE Date of ref document: 20100225 Kind code of ref document: P |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: VDEP Effective date: 20100106 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 |
|
LTIE | Lt: invalidation of european patent or patent extension |
Effective date: 20100106 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100417 Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100506 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100506 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FD4D |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 Ref country code: IE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100407 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100406 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 |
|
26N | No opposition filed |
Effective date: 20101007 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 |
|
BERE | Be: lapsed |
Owner name: CHRISTIAN-ALBRECHTS-UNIVERSITAT ZU KIEL Effective date: 20101130 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MC Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20101130 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20101130 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20101130 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20101130 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R082 Ref document number: 502006005892 Country of ref document: DE Representative=s name: CHRISTIAN BIEHL, DE Ref country code: DE Ref legal event code: R082 Ref document number: 502006005892 Country of ref document: DE Representative=s name: HANSEN UND HEESCHEN PATENTANWAELTE, DE |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R082 Ref document number: 502006005892 Country of ref document: DE Representative=s name: HANSEN UND HEESCHEN PATENTANWAELTE, DE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20101124 Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100707 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100106 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MM01 Ref document number: 454353 Country of ref document: AT Kind code of ref document: T Effective date: 20111124 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: AT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20111124 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 10 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 11 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20161121 Year of fee payment: 11 Ref country code: FR Payment date: 20161118 Year of fee payment: 11 Ref country code: GB Payment date: 20161122 Year of fee payment: 11 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R119 Ref document number: 502006005892 Country of ref document: DE |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20171124 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST Effective date: 20180731 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20171130 Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20180602 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20171124 |