EP1956640A4 - LASER PROCESSING PROCEDURES - Google Patents

LASER PROCESSING PROCEDURES

Info

Publication number
EP1956640A4
EP1956640A4 EP06832751A EP06832751A EP1956640A4 EP 1956640 A4 EP1956640 A4 EP 1956640A4 EP 06832751 A EP06832751 A EP 06832751A EP 06832751 A EP06832751 A EP 06832751A EP 1956640 A4 EP1956640 A4 EP 1956640A4
Authority
EP
European Patent Office
Prior art keywords
laser processing
processing procedures
procedures
laser
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP06832751A
Other languages
German (de)
French (fr)
Other versions
EP1956640A1 (en
EP1956640B1 (en
Inventor
Takeshi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of EP1956640A1 publication Critical patent/EP1956640A1/en
Publication of EP1956640A4 publication Critical patent/EP1956640A4/en
Application granted granted Critical
Publication of EP1956640B1 publication Critical patent/EP1956640B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mining & Mineral Resources (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
EP06832751.9A 2005-11-18 2006-11-16 Laser processing method Active EP1956640B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005334734A JP4237745B2 (en) 2005-11-18 2005-11-18 Laser processing method
PCT/JP2006/322871 WO2007058262A1 (en) 2005-11-18 2006-11-16 Laser processing method

Publications (3)

Publication Number Publication Date
EP1956640A1 EP1956640A1 (en) 2008-08-13
EP1956640A4 true EP1956640A4 (en) 2009-09-16
EP1956640B1 EP1956640B1 (en) 2016-01-27

Family

ID=38048646

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06832751.9A Active EP1956640B1 (en) 2005-11-18 2006-11-16 Laser processing method

Country Status (7)

Country Link
US (2) US7754583B2 (en)
EP (1) EP1956640B1 (en)
JP (1) JP4237745B2 (en)
KR (1) KR101341675B1 (en)
CN (1) CN101313387B (en)
TW (1) TWI433219B (en)
WO (1) WO2007058262A1 (en)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (en) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 Laser processing method and semiconductor chip manufacturing method
DE60313900T2 (en) 2002-03-12 2008-01-17 Hamamatsu Photonics K.K., Hamamatsu Method for separating substrates
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
WO2003076119A1 (en) 2002-03-12 2003-09-18 Hamamatsu Photonics K.K. Method of cutting processed object
TWI520269B (en) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
FR2852250B1 (en) 2003-03-11 2009-07-24 Jean Luc Jouvin PROTECTIVE SHEATH FOR CANNULA, AN INJECTION KIT COMPRISING SUCH ANKLE AND NEEDLE EQUIPPED WITH SUCH ANKLE
EP1609559B1 (en) * 2003-03-12 2007-08-08 Hamamatsu Photonics K. K. Laser beam machining method
KR101119387B1 (en) * 2003-07-18 2012-03-07 하마마츠 포토닉스 가부시키가이샤 cutting method
JP4563097B2 (en) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 Semiconductor substrate cutting method
JP4601965B2 (en) * 2004-01-09 2010-12-22 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
JP4509578B2 (en) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
JP4598407B2 (en) * 2004-01-09 2010-12-15 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
EP1742253B1 (en) 2004-03-30 2012-05-09 Hamamatsu Photonics K.K. Laser processing method
KR101109860B1 (en) * 2004-08-06 2012-02-21 하마마츠 포토닉스 가부시키가이샤 Laser processing method, cutting method for work and semiconductor device
JP4762653B2 (en) * 2005-09-16 2011-08-31 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
JP4907965B2 (en) * 2005-11-25 2012-04-04 浜松ホトニクス株式会社 Laser processing method
JP4804911B2 (en) * 2005-12-22 2011-11-02 浜松ホトニクス株式会社 Laser processing equipment
JP4907984B2 (en) * 2005-12-27 2012-04-04 浜松ホトニクス株式会社 Laser processing method and semiconductor chip
EP1875983B1 (en) 2006-07-03 2013-09-11 Hamamatsu Photonics K.K. Laser processing method and chip
JP5183892B2 (en) 2006-07-03 2013-04-17 浜松ホトニクス株式会社 Laser processing method
CN101516566B (en) * 2006-09-19 2012-05-09 浜松光子学株式会社 Laser processing method and laser processing apparatus
JP4954653B2 (en) 2006-09-19 2012-06-20 浜松ホトニクス株式会社 Laser processing method
JP5101073B2 (en) * 2006-10-02 2012-12-19 浜松ホトニクス株式会社 Laser processing equipment
JP5132911B2 (en) * 2006-10-03 2013-01-30 浜松ホトニクス株式会社 Laser processing method
JP4964554B2 (en) * 2006-10-03 2012-07-04 浜松ホトニクス株式会社 Laser processing method
CN102357739B (en) * 2006-10-04 2014-09-10 浜松光子学株式会社 Laser processing method
JP5336054B2 (en) * 2007-07-18 2013-11-06 浜松ホトニクス株式会社 Processing information supply system provided with processing information supply device
JP4985291B2 (en) * 2007-10-01 2012-07-25 株式会社デンソー Wafer processing method
JP5342772B2 (en) 2007-10-12 2013-11-13 浜松ホトニクス株式会社 Processing object cutting method
JP5449665B2 (en) 2007-10-30 2014-03-19 浜松ホトニクス株式会社 Laser processing method
JP5054496B2 (en) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 Processing object cutting method
JP5134928B2 (en) * 2007-11-30 2013-01-30 浜松ホトニクス株式会社 Workpiece grinding method
JP5692969B2 (en) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 Aberration correction method, laser processing method using this aberration correction method, laser irradiation method using this aberration correction method, aberration correction apparatus, and aberration correction program
JP5254761B2 (en) 2008-11-28 2013-08-07 浜松ホトニクス株式会社 Laser processing equipment
JP5241525B2 (en) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 Laser processing equipment
JP5241527B2 (en) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 Laser processing equipment
US8728914B2 (en) 2009-02-09 2014-05-20 Hamamatsu Photonics K.K. Workpiece cutting method
US9035216B2 (en) 2009-04-07 2015-05-19 Hamamatsu Photonics K.K. Method and device for controlling interior fractures by controlling the laser pulse width
JP5491761B2 (en) 2009-04-20 2014-05-14 浜松ホトニクス株式会社 Laser processing equipment
JP5476063B2 (en) * 2009-07-28 2014-04-23 浜松ホトニクス株式会社 Processing object cutting method
JP5479924B2 (en) * 2010-01-27 2014-04-23 浜松ホトニクス株式会社 Laser processing method
US8722516B2 (en) 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
KR20130039955A (en) * 2011-10-13 2013-04-23 현대자동차주식회사 A laser apparatus for welding
US9040389B2 (en) * 2012-10-09 2015-05-26 Infineon Technologies Ag Singulation processes
CN104944363B (en) * 2014-03-26 2017-12-19 中芯国际集成电路制造(上海)有限公司 A kind of preparation method of MEMS structure
US10141265B2 (en) * 2016-12-29 2018-11-27 Intel IP Corporation Bent-bridge semiconductive apparatus
JP6991475B2 (en) 2017-05-24 2022-01-12 協立化学産業株式会社 How to cut the object to be processed
CN109128625A (en) * 2018-09-29 2019-01-04 安徽钟南人防工程防护设备有限公司 A kind of stress consumption welder
US10589445B1 (en) * 2018-10-29 2020-03-17 Semivation, LLC Method of cleaving a single crystal substrate parallel to its active planar surface and method of using the cleaved daughter substrate
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7656850B2 (en) 2020-02-20 2025-04-04 協立化学産業株式会社 Method for cutting workpiece and resin application device
JP2023046922A (en) * 2021-09-24 2023-04-05 株式会社ディスコ Processing method for plate-shaped object

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63260407A (en) * 1987-04-17 1988-10-27 三菱電機株式会社 Semiconductor wafer dividing device and its dividing method
JPH03261162A (en) * 1990-03-12 1991-11-21 Fujitsu Ltd Manufacture of semiconductor device
JP3261162B2 (en) 1992-06-25 2002-02-25 松下電工株式会社 Remote monitoring and control system
JP3751650B2 (en) * 1995-01-10 2006-03-01 浜松ホトニクス株式会社 Static neutralizer
JP3178524B2 (en) * 1998-11-26 2001-06-18 住友重機械工業株式会社 Laser marking method and apparatus and marked member
JP2001211044A (en) * 2000-01-25 2001-08-03 Matsushita Electric Ind Co Ltd Method for manufacturing surface acoustic wave device
JP2002066865A (en) * 2000-09-01 2002-03-05 Disco Abrasive Syst Ltd Cutting equipment
JP4659300B2 (en) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 Laser processing method and semiconductor chip manufacturing method
US6656749B1 (en) * 2001-12-13 2003-12-02 Advanced Micro Devices, Inc. In-situ monitoring during laser thermal annealing
TWI326626B (en) * 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
TWI520269B (en) * 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
JP2005129607A (en) 2003-10-22 2005-05-19 Disco Abrasive Syst Ltd Wafer division method
JP4402974B2 (en) * 2004-02-09 2010-01-20 株式会社ディスコ Wafer division method
JP2005268752A (en) * 2004-02-19 2005-09-29 Canon Inc Laser cleaving method, member to be cleaved, and semiconductor element chip
JP4536407B2 (en) * 2004-03-30 2010-09-01 浜松ホトニクス株式会社 Laser processing method and object to be processed
WO2005098915A1 (en) 2004-03-30 2005-10-20 Hamamatsu Photonics K.K. Laser processing method and semiconductor chip
EP1742253B1 (en) 2004-03-30 2012-05-09 Hamamatsu Photonics K.K. Laser processing method
JP4745271B2 (en) 2007-03-08 2011-08-10 株式会社日本触媒 Nitrous oxide decomposition catalyst and treatment method of nitrous oxide-containing gas

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
No further relevant documents disclosed *

Also Published As

Publication number Publication date
TWI433219B (en) 2014-04-01
US20100227453A1 (en) 2010-09-09
KR101341675B1 (en) 2013-12-16
EP1956640A1 (en) 2008-08-13
JP4237745B2 (en) 2009-03-11
WO2007058262A1 (en) 2007-05-24
US8124500B2 (en) 2012-02-28
KR20080074855A (en) 2008-08-13
CN101313387A (en) 2008-11-26
US7754583B2 (en) 2010-07-13
JP2007142206A (en) 2007-06-07
CN101313387B (en) 2010-10-06
US20090162994A1 (en) 2009-06-25
TW200731375A (en) 2007-08-16
EP1956640B1 (en) 2016-01-27

Similar Documents

Publication Publication Date Title
EP1867427A4 (en) LASER PROCESSING PROCEDURES
DE602006019884D1 (en) LASER PROCESSING PROCEDURES
EP1956640A4 (en) LASER PROCESSING PROCEDURES
EP1959482A4 (en) LASER PROCESSING PROCEDURES
ITTO20050016A1 (en) LASER MACHINE MACHINE
DE112006003730A5 (en) Surgical processing tool
DE602006021005D1 (en) OPTICAL MICROSECTROMETER
DK1928882T3 (en) (S) -N-methylnaltrexone
ATE408603T1 (en) PYRAZOLYLCARBOXANILIDES
CR9974A (en) GAVIÓN
DE602006018072D1 (en) Laser processing head
DE502006003394D1 (en) LEHNENKLAPPUNG
DE502006005667D1 (en) GELENKLAGER
DE602006019720D1 (en) PRECISION PROCESSING PROCEDURES
DE502006005768D1 (en) Hydrolysestabilisatorformulierungen
FR2884621B1 (en) LASER ILLUMINATOR
DE502006007466D1 (en) Laser microdissection
DE112006002964A5 (en) Zweirichtungsreflektanzverteilungsmessgerät
DE602006014624D1 (en) Laser processing robot system
DE502005005839D1 (en) FELDGEERÄT
DE502006004302D1 (en) VERSCHLUSSKAPPE
FI6681U1 (en) Beam
DE502006001397D1 (en) LAGERBUCHSE
EP1969686A4 (en) LASER OFFSET
DE102005052834B8 (en) Punktschweißklebverbindung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20080606

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

A4 Supplementary search report drawn up and despatched

Effective date: 20090817

RIC1 Information provided on ipc code assigned before grant

Ipc: B23K 101/40 20060101ALN20090811BHEP

Ipc: B23K 26/16 20060101ALI20090811BHEP

Ipc: B23K 26/38 20060101ALI20090811BHEP

Ipc: B23K 26/00 20060101ALI20090811BHEP

Ipc: H01L 21/301 20060101AFI20070711BHEP

Ipc: B23K 26/40 20060101ALI20090811BHEP

17Q First examination report despatched

Effective date: 20091126

DAX Request for extension of the european patent (deleted)
GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20150625

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 773059

Country of ref document: AT

Kind code of ref document: T

Effective date: 20160215

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602006047843

Country of ref document: DE

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20160127

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 773059

Country of ref document: AT

Kind code of ref document: T

Effective date: 20160127

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160428

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160527

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160527

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602006047843

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

26N No opposition filed

Effective date: 20161028

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160427

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20161116

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161130

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161130

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20170731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161116

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161116

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20061116

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160127

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230509

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20241001

Year of fee payment: 19