EP1942534A3 - Method of forming a phase change layer by electro-chemical deposition and manufacturing of a storage node and a phase change memory device using the method - Google Patents
Method of forming a phase change layer by electro-chemical deposition and manufacturing of a storage node and a phase change memory device using the method Download PDFInfo
- Publication number
- EP1942534A3 EP1942534A3 EP07150397A EP07150397A EP1942534A3 EP 1942534 A3 EP1942534 A3 EP 1942534A3 EP 07150397 A EP07150397 A EP 07150397A EP 07150397 A EP07150397 A EP 07150397A EP 1942534 A3 EP1942534 A3 EP 1942534A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- phase change
- change layer
- forming
- electro
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of the switching material, e.g. post-treatment, doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/066—Patterning of the switching material by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Abstract
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070000308A KR20080063652A (en) | 2007-01-02 | 2007-01-02 | Methods of forming phase change material layer and manufacturing phase change memory device using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1942534A2 EP1942534A2 (en) | 2008-07-09 |
EP1942534A3 true EP1942534A3 (en) | 2010-05-05 |
Family
ID=39229601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07150397A Withdrawn EP1942534A3 (en) | 2007-01-02 | 2007-12-21 | Method of forming a phase change layer by electro-chemical deposition and manufacturing of a storage node and a phase change memory device using the method |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080156651A1 (en) |
EP (1) | EP1942534A3 (en) |
JP (1) | JP2008166758A (en) |
KR (1) | KR20080063652A (en) |
CN (1) | CN101222020A (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8377341B2 (en) * | 2007-04-24 | 2013-02-19 | Air Products And Chemicals, Inc. | Tellurium (Te) precursors for making phase change memory materials |
US8372483B2 (en) * | 2008-06-27 | 2013-02-12 | Asm International N.V. | Methods for forming thin films comprising tellurium |
JP5466838B2 (en) * | 2008-07-09 | 2014-04-09 | ピーエスフォー ルクスコ エスエイアールエル | Phase change solid-state memory recording material and phase change solid-state memory |
US8697486B2 (en) | 2009-04-15 | 2014-04-15 | Micro Technology, Inc. | Methods of forming phase change materials and methods of forming phase change memory circuitry |
US8148580B2 (en) | 2009-04-15 | 2012-04-03 | Micron Technology, Inc. | Methods of forming a tellurium alkoxide and methods of forming a mixed halide-alkoxide of tellurium |
KR101134282B1 (en) * | 2009-11-13 | 2012-04-13 | 연세대학교 산학협력단 | Method for manufacturing non-volatile resistance switching memory |
CN102560589B (en) * | 2012-03-08 | 2015-05-13 | 厦门大学 | Method for preparing Ge-Sb-Te ternary phase-change material film |
CN102637822B (en) * | 2012-03-14 | 2014-03-26 | 宁波大学 | High-purity chalcogenide phase change alloy target and preparation method for same |
WO2015174240A1 (en) * | 2014-05-12 | 2015-11-19 | 国立研究開発法人産業技術総合研究所 | Crystalline alignment layer laminate structure, electronic memory, and method for manufacturing crystalline alignment layer laminate structure |
CN107740150B (en) * | 2017-08-25 | 2019-11-08 | 洛阳师范学院 | A kind of germanium-selenide film and preparation method thereof |
CN107620103B (en) * | 2017-09-11 | 2019-12-24 | 洛阳师范学院 | Preparation method of germanium sulfide film |
CN108389960B (en) * | 2018-01-24 | 2019-01-01 | 北京航空航天大学 | A kind of preparation method of doped yttrium antimony telluride phase-change material |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1523003A1 (en) * | 2003-09-26 | 2005-04-13 | Hewlett-Packard Development Company, L.P. | Ultra-high density data storage device using phase change diode memory cells and methods of fabrication thereof |
EP1667244A2 (en) * | 2004-12-02 | 2006-06-07 | Samsung Electronics Co., Ltd. | Phase change memory device having phase change material layer containing phase change nano particles and method of fabricating the same |
US20060204794A1 (en) * | 2004-09-09 | 2006-09-14 | Fujitsu Limited | Laminate structure, magnetic recording medium and method for producing the same, magnetic recording device, magnetic recording method, and element with the laminate structure |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050184282A1 (en) * | 2004-02-20 | 2005-08-25 | Li-Shyue Lai | Phase change memory cell and method of its manufacture |
TWI261356B (en) * | 2005-01-03 | 2006-09-01 | Macronix Int Co Ltd | Phase-change multi-level cell and operating method thereof |
KR100695168B1 (en) * | 2006-01-10 | 2007-03-14 | 삼성전자주식회사 | Method of forming phase change material thin film, and method of manufacturing phase change memory device using the same |
-
2007
- 2007-01-02 KR KR1020070000308A patent/KR20080063652A/en not_active Application Discontinuation
- 2007-12-12 US US12/000,378 patent/US20080156651A1/en not_active Abandoned
- 2007-12-14 JP JP2007323837A patent/JP2008166758A/en active Pending
- 2007-12-21 EP EP07150397A patent/EP1942534A3/en not_active Withdrawn
-
2008
- 2008-01-02 CN CNA2008100095148A patent/CN101222020A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1523003A1 (en) * | 2003-09-26 | 2005-04-13 | Hewlett-Packard Development Company, L.P. | Ultra-high density data storage device using phase change diode memory cells and methods of fabrication thereof |
US20060204794A1 (en) * | 2004-09-09 | 2006-09-14 | Fujitsu Limited | Laminate structure, magnetic recording medium and method for producing the same, magnetic recording device, magnetic recording method, and element with the laminate structure |
EP1667244A2 (en) * | 2004-12-02 | 2006-06-07 | Samsung Electronics Co., Ltd. | Phase change memory device having phase change material layer containing phase change nano particles and method of fabricating the same |
Non-Patent Citations (4)
Title |
---|
ABKEN A E: "Electrodeposition of SbxTey layers and chemical stability of Mo/Sb2Te3 systems", JOURNAL OF MATERIALS SCIENCE LETTERS, vol. 21, no. 11, 1 June 2002 (2002-06-01), pages 845 - 847, XP001168018, ISSN: 0261-8028 * |
HUANG Q ET AL: "Electrodeposition of SbTe phase-change alloys", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 155, no. 2, 3 December 2007 (2007-12-03), pages D104 - D109, XP002574559, ISSN: 0013-4651 * |
LEIMKÜHLER G ET AL: "Electrodeposition of antimony telluride", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 149, no. 10, October 2002 (2002-10-01), pages C474 - C478, XP002574558, ISSN: 0013-4651 * |
WANG C ET AL: "Electrodeposition of Sb2Te3 films on Si(100) and Ag substrates", ELECTROCHEMICAL AND SOLID-STATE LETTERS, vol. 9, no. 9, September 2006 (2006-09-01), pages C147 - C149, XP002574557, ISSN: 1099-0062 * |
Also Published As
Publication number | Publication date |
---|---|
CN101222020A (en) | 2008-07-16 |
EP1942534A2 (en) | 2008-07-09 |
US20080156651A1 (en) | 2008-07-03 |
JP2008166758A (en) | 2008-07-17 |
KR20080063652A (en) | 2008-07-07 |
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