EP1933120A2 - Capteur de radiations - Google Patents

Capteur de radiations Download PDF

Info

Publication number
EP1933120A2
EP1933120A2 EP07121709A EP07121709A EP1933120A2 EP 1933120 A2 EP1933120 A2 EP 1933120A2 EP 07121709 A EP07121709 A EP 07121709A EP 07121709 A EP07121709 A EP 07121709A EP 1933120 A2 EP1933120 A2 EP 1933120A2
Authority
EP
European Patent Office
Prior art keywords
thermopile
package
well
wafer
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07121709A
Other languages
German (de)
English (en)
Other versions
EP1933120A3 (fr
Inventor
Theodore J. Krellner
Peter J. Straub
Robert Twiney
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of EP1933120A2 publication Critical patent/EP1933120A2/fr
Publication of EP1933120A3 publication Critical patent/EP1933120A3/fr
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • This subject invention relates to sensors such as infrared sensors.
  • a typical infrared sensor includes a thermopile formed by semiconductor processes in silicon. See U.S. Patent No. 6,987,223 incorporated herein by this reference.
  • the thermopile is bonded to a base and then covered with a TO style can or package.
  • the lid of the TO can is perforated to produce an opening then covered by a window or filter attached to the TO can lid over the opening.
  • the TO package serves to maintain the thermopile in a controlled environment. Changes in the thermal conductivity of the gas in the can change the response of the sensor. So, the TO can is typically filled with a dry inert gas or subjected to a vacuum. The resulting package allows infrared radiation ingress through the filter while protecting the infrared sensor or thermopile from changes in the environment.
  • thermopiles semiconductor processes are used to make the thermopiles. Then, the thermopile is removed from the semiconductor fabrication area. Next, the TO cans are prepared, the lids are fitted with the filters, the thermopiles are bonded to the base, the required electrical connections are made, and the can is welded to the base. The result is a process which often requires significant manual labor.
  • the TO can package used is not conducive to placement with modem automated circuit board assembly equipment. Also, the TO can packaging technique significantly increases the size of the sensor and can add cost without adding significant value. Finally, the TO can package system is not always hermetically sealed and the content of the gas envelope within the TO can may change over time adversely effecting the performance of the thermopile.
  • a complete sensor which can be fabricated using semiconductor processes throughout.
  • the need for a TO style can is eliminated.
  • the method produces a better hermetically sealed environment about the thermopile.
  • the method reduces the amount of manual labor associated with the production of sensors.
  • the sensor can be made smaller and at a lower cost.
  • the subject invention results from the realization that a better, lower cost sensor is effected by eliminating the prior art TO can and instead providing a package fabricated using semiconductor production techniques wherein a well is formed (typically etched) in a substrate (typically silicon) to be bonded to the substrate of the thermopile.
  • the subject invention features a method of making a radiation sensor.
  • a plurality of thermopiles are formed on one wafer.
  • a plurality of packages for the thermopiles are formed, each package including a well covered by a window. Since silicon is a naturally IR transmissive material it is possible for the silicon wafer to act as the window, and its IR transmission can be further enhanced by use of suitable antireflective coatings.
  • the wafers are bonded in a controlled gas or vacuum environment such that each thermopile resides in the well below the window of a package.
  • the well of each package is formed by etching the wafer.
  • a KOH etchant can be used to produce a well with angled sides.
  • a deep reactive ion etching process DRIE
  • the window usually serves as a filter, and in one variation, a wavelength dependent filter.
  • the window is bonded to the well.
  • the window is integral with the well and produced by etching only partially into the wafer.
  • the wafers may be bonded to each other and then diced to produce individual radiation sensors.
  • Another wafer may be bonded to the wafer including the plurality of thermopiles, either before or after the wafer including the plurality of thermopiles and the wafer including the plurality of packages are bonded together.
  • a radiation sensor in accordance with this invention includes a thermopile, a package for the thermopile including a well over the thermopile formed in a semiconductor material and a window covering the well, and a controlled gas or vacuum in the well.
  • the semiconductor material is silicon and the well is etched.
  • the typical window serves as a filter.
  • the radiation sensor may also include a wafer under the thermopile, and/or the package for the thermopile may include a hole.
  • the window is a separate piece bonded to the well.
  • the window is integral with the well and formed by only partially etching the silicon substrate.
  • the well may have angled or straight sides.
  • thermopile 20 shows prior art infrared sensor 10 which includes TO can 12 welded to base 14.
  • TO can 12 lid 18 includes filter 16 attached thereto over an opening in lid 18.
  • thermopile structure 20 Inside can 12 on base 14 is thermopile structure 20, Fig. 2 .
  • the construction of thermopile 20 can vary but it typically includes thermal elements 22a and 22b, diaphragm or membrane 24 (e.g., layers of a dielectric, p-silicon, and other materials), and silicon heat sink 26 forming cold junctions 28a and 28b and hot junction 30 with absorber 32.
  • the subject invention eliminates the TO can style package commonly used for infrared and other sensors.
  • a semiconductor typically a silicon wafer substrate 40, Fig. 3A is masked as shown at 41 and then etched as shown in Fig. 3B to produce well 42.
  • angled well walls 42a, 42b can be formed.
  • DRIE deep reactive ion etching
  • filter 46 is bonded, using silicon bonding techniques, for example, over well 42, Fig. 3C .
  • Numerous filters are known to those skilled in the art including wavelength dependent filters and broad and narrow band pass filters made of silicon, sapphire, and other materials.
  • wafer 50 containing a number of these formed packages is bonded to wafer 52 processed to include a like number of thermopiles as shown in Fig. 2 .
  • a controlled gas environment 54 or, alternatively in a vacuum the result, after dicing, is a controlled gas in well 42, Fig. 5 and a hermetic seal between package 60 and thermopile structure 20.
  • a base 64 such as another wafer or a printed circuit board, for example, may be added to the sensor and the associated wiring, leads, and pins or other electrical connections formed as required either before the two wafers are bonded or thereafter.
  • Base 64 may serve as a mounting surface, and in the case of a wafer, it may be sealed by bonding in a controlled gas environment or vacuum as discussed above. In general, the deeper cavity 42, the more sensitive the resulting thermopile.
  • the sensor can then be packaged in a standard semiconductor package or integrated into a circuit using chip scale packaging techniques.
  • the result is a complete sensor fabricated using semiconductor processes eliminating the need for a TO style can and the reducing the amount of manual labor associated with the production of sensors.
  • the hermetic seal about the thermopile is better, thereby providing greater reliability.
  • the sensors are smaller, and, when manufactured on a large scale, the sensors can be produced at a reduced cost.
  • a semiconductor material 40 Fig. 6A is masked as shown at 41 and then partially etched as shown in Fig. 6B to produce well 42' and integral window/filter 46'.
  • Appropriate etch control techniques are known to those skilled in the art to produce window/filter 46' of a desired thickness.
  • thermopile structure 20 a wafer containing a number of these formed packages is bonded to a wafer processed to include a like number of thermopiles as shown in Fig. 2 .
  • a wafer containing a number of these formed packages is bonded to a wafer processed to include a like number of thermopiles as shown in Fig. 2 .
  • the result, after dicing, is a controlled gas in well 42', Fig. 7 and a hermetic seal between package 60' and thermopile structure 20.
  • Package 60' now includes integral window/filter 46'. If silicon is not the preferred filter material, filter 46' can be coated if necessary.
  • semiconductor material 40, Fig. 8 is masked as shown at 41' and then etched to form a silicon cup (as shown) or hole (not shown) 80, Fig. 9 , for eventual placement of contact pads 82 for example.
  • a silicon base 26' for the thermopile 20 is formed by first etching cavities 90 in a wafer 92 using KOH or DRIE techniques, for example. A second wafer is bonded to the first wafer 92 and most of the second wafer is etched away to leave a thin diaphragm 24'. The thermopile 20 and associated electrical connections are formed on the diaphragm layer 24'. Finally, a cap of semiconductor material 40 such as formed as described above in Fig. 8 is bonded over the thin diaphragm 24' and thermopile 20 to the silicon base 26' of the first layer 90. The cap 40 is bonded to the thin diaphragm 24' after the diaphragm 24' has been bonded to silicon base 26' in the manner described above to capture a controlled gas environment or to create a vacuum about thermopile 20.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Micromachines (AREA)
  • Radiation Pyrometers (AREA)
EP07121709A 2006-12-04 2007-11-28 Capteur de radiations Withdrawn EP1933120A3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/566,405 US20080128620A1 (en) 2006-12-04 2006-12-04 Method of making a thermopile detector and package

Publications (2)

Publication Number Publication Date
EP1933120A2 true EP1933120A2 (fr) 2008-06-18
EP1933120A3 EP1933120A3 (fr) 2010-02-10

Family

ID=39302942

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07121709A Withdrawn EP1933120A3 (fr) 2006-12-04 2007-11-28 Capteur de radiations

Country Status (5)

Country Link
US (1) US20080128620A1 (fr)
EP (1) EP1933120A3 (fr)
JP (1) JP2008139315A (fr)
KR (1) KR20080051084A (fr)
CN (1) CN101196423A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008041131B4 (de) * 2008-08-08 2020-07-30 Robert Bosch Gmbh Thermopile-Sensor zur Detektion von Infrarot-Strahlung
CN101691200B (zh) * 2009-09-29 2012-07-18 中国科学院上海微系统与信息技术研究所 非致冷红外探测器的低温真空封装结构及制作方法
JP5786273B2 (ja) * 2009-12-28 2015-09-30 オムロン株式会社 赤外線センサ及び赤外線センサモジュール
US8410946B2 (en) * 2010-03-05 2013-04-02 General Electric Company Thermal measurement system and method for leak detection
CN102947683B (zh) * 2010-04-26 2016-04-06 Hme有限公司 多层薄膜热电堆及采用该多层薄膜热电堆的辐射温度计、多层薄膜热电堆的制造方法
CN103035833B (zh) * 2011-09-30 2015-12-02 中国科学院上海微系统与信息技术研究所 一种平面型半导体热电芯片及制备方法
US10439118B2 (en) * 2014-12-04 2019-10-08 Maxim Integrated Products, Inc. MEMS-based wafer level packaging for thermo-electric IR detectors
EP3380820B1 (fr) 2015-11-27 2021-09-15 Heimann Sensor GmbH Capteur infrarouge thermique dans emballage de niveau de tranche
CN114112045A (zh) * 2020-08-28 2022-03-01 宁波舜宇光电信息有限公司 红外测温模组、终端设备以及温度测量方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0566156A1 (fr) * 1992-04-17 1993-10-20 Terumo Kabushiki Kaisha Détecteur infrarouge et méthode de fabrication
US20040040592A1 (en) * 2002-08-28 2004-03-04 Delphi Technologies Inc. Heat sink for silicon thermopile
US20050042802A1 (en) * 2001-01-10 2005-02-24 Kia Silverbrook Method of fabricating an array of wafer scale polymeric caps

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2179052C (fr) * 1993-12-13 2001-02-13 Robert E. Higashi Microboitiers integres de silicium sous vide pour dispositifs ir
GB2310952B (en) * 1996-03-05 1998-08-19 Mitsubishi Electric Corp Infrared detector
US6787052B1 (en) * 2000-06-19 2004-09-07 Vladimir Vaganov Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers
US7180064B2 (en) * 2003-07-24 2007-02-20 Delphi Technologies, Inc. Infrared sensor package
DE102004002164A1 (de) * 2004-01-15 2005-08-04 Robert Bosch Gmbh Strahlungsdetektor, Sensormodul mit einem Strahlungsdetektor und Verfahren zum Herstellen eines Strahlungsdetektors
DE102004030418A1 (de) * 2004-06-24 2006-01-19 Robert Bosch Gmbh Mikrostrukturierter Infrarot-Sensor und ein Verfahren zu seiner Herstellung
US20060076046A1 (en) * 2004-10-08 2006-04-13 Nanocoolers, Inc. Thermoelectric device structure and apparatus incorporating same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0566156A1 (fr) * 1992-04-17 1993-10-20 Terumo Kabushiki Kaisha Détecteur infrarouge et méthode de fabrication
US20050042802A1 (en) * 2001-01-10 2005-02-24 Kia Silverbrook Method of fabricating an array of wafer scale polymeric caps
US20040040592A1 (en) * 2002-08-28 2004-03-04 Delphi Technologies Inc. Heat sink for silicon thermopile

Also Published As

Publication number Publication date
JP2008139315A (ja) 2008-06-19
US20080128620A1 (en) 2008-06-05
CN101196423A (zh) 2008-06-11
EP1933120A3 (fr) 2010-02-10
KR20080051084A (ko) 2008-06-10

Similar Documents

Publication Publication Date Title
EP1933120A2 (fr) Capteur de radiations
EP1860417B1 (fr) Capteur de pression comportant une chambre et procédé de fabrication de celui-ci
US20190120710A1 (en) Pressure sensor generating a transduced signal with reduced ambient temperature dependence, and manufacturing method thereof
CN101643193B (zh) 具有带有不同大气内压力的空腔的微机械装置
US7259436B2 (en) Micromechanical component and corresponding production method
CN110836855B (zh) 用于光声气体传感器的检测器模块
US20050186703A1 (en) Method for packaging semiconductor chips and corresponding semiconductor chip system
JP4769353B2 (ja) コンポーネントを製造する方法
GB2435544A (en) MEMS device
TWI439413B (zh) 微機電感測裝置及其製作方法
US7647832B2 (en) Micromechanical device and method for producing a micromechanical device
CN110088037B (zh) 半导体器件和用于形成半导体器件的方法
EP1234326B1 (fr) Encapsulation integree de capteurs micromecaniques et de circuits de commande associes
US20160229687A1 (en) Chip package and fabrication method thereof
EP3301425B1 (fr) Dispositif de capteur de pression et procédé de formation de dispositif de capteur de pression
US20180312397A1 (en) Method for manufacturing a micromechanical inertial sensor
US11623861B2 (en) Micromechanical component for a sensor device and manufacturing method for a micromechanical component for a sensor device
JPH0797643B2 (ja) 圧力変換装置の製造方法
EP2172755A1 (fr) Capteur à infrarouge avec filtre à bande passante et cavité sous vide
US8853850B2 (en) MEMS packaging scheme using dielectric fence
CN114300932B (zh) 芯片封装结构、形成方法及电子设备
CN115594145B (zh) 电容式压力传感器及其制作方法
Park et al. Wafer scale encapsulation of MEMS devices
US9284186B2 (en) Semiconductor device and method of manufacturing the same
WO2005091380A1 (fr) Dispositifs de detection infrarouge

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

RIC1 Information provided on ipc code assigned before grant

Ipc: G01J 5/04 20060101ALI20100107BHEP

Ipc: G01J 5/12 20060101AFI20080423BHEP

AKY No designation fees paid
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20100601