EP1903602A3 - Transistor de mémoire non-volatile - Google Patents
Transistor de mémoire non-volatile Download PDFInfo
- Publication number
- EP1903602A3 EP1903602A3 EP07121233A EP07121233A EP1903602A3 EP 1903602 A3 EP1903602 A3 EP 1903602A3 EP 07121233 A EP07121233 A EP 07121233A EP 07121233 A EP07121233 A EP 07121233A EP 1903602 A3 EP1903602 A3 EP 1903602A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- storage medium
- insulating barrier
- charge storage
- charge
- supply region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000004888 barrier function Effects 0.000 abstract 6
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70363905P | 2005-07-28 | 2005-07-28 | |
EP05112170A EP1748472A1 (fr) | 2005-07-28 | 2005-12-14 | Transistor de mémoire non-volatile |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05112170A Division EP1748472A1 (fr) | 2005-07-28 | 2005-12-14 | Transistor de mémoire non-volatile |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1903602A2 EP1903602A2 (fr) | 2008-03-26 |
EP1903602A3 true EP1903602A3 (fr) | 2009-04-01 |
Family
ID=39103468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07121233A Withdrawn EP1903602A3 (fr) | 2005-07-28 | 2005-12-14 | Transistor de mémoire non-volatile |
Country Status (1)
Country | Link |
---|---|
EP (1) | EP1903602A3 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2284870B1 (fr) | 2009-08-12 | 2012-02-22 | Imec | Procédé de formation de cellule de mémoire non volatile à grille flottante |
EP2806452B1 (fr) | 2013-05-24 | 2018-12-26 | IMEC vzw | Dispositifs de semi-conducteur à mémoire non volatile et leur procédé de fabrication |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6617639B1 (en) * | 2002-06-21 | 2003-09-09 | Advanced Micro Devices, Inc. | Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling |
EP1411555A2 (fr) * | 2002-10-14 | 2004-04-21 | Samsung Electronics Co., Ltd. | Mémoire non-volatile de type silicium/oxyde/nitrure/silicium/nitrure/oxyde/silicium |
EP1487013A2 (fr) * | 2003-06-10 | 2004-12-15 | Samsung Electronics Co., Ltd. | Cellule mémoire de type SONOS et son procédé de fabrication |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1605517B1 (fr) | 2001-04-27 | 2011-09-14 | Imec | Barrière isolante |
-
2005
- 2005-12-14 EP EP07121233A patent/EP1903602A3/fr not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6617639B1 (en) * | 2002-06-21 | 2003-09-09 | Advanced Micro Devices, Inc. | Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling |
EP1411555A2 (fr) * | 2002-10-14 | 2004-04-21 | Samsung Electronics Co., Ltd. | Mémoire non-volatile de type silicium/oxyde/nitrure/silicium/nitrure/oxyde/silicium |
EP1487013A2 (fr) * | 2003-06-10 | 2004-12-15 | Samsung Electronics Co., Ltd. | Cellule mémoire de type SONOS et son procédé de fabrication |
Non-Patent Citations (2)
Title |
---|
BLOMME P ET AL: "Multilayer tunneling barriers for nonvolatile memory applications", DEVICE RESEARCH CONFERENCE, 2002. 60TH DRC. CONFERENCE DIGEST JUN 24-26, 2002, PISCATAWAY, NJ, USA,IEEE, 24 June 2002 (2002-06-24), pages 153 - 154, XP010600864, ISBN: 978-0-7803-7317-4 * |
BLORNME P ET AL: "Improvement of write/erase cycling of memory cells with SiO2/HfO2 tunnel dielectric", INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2003 IEEE INTERNATIONAL LAKE TAHOE, CA, USA OCT. 20-23, 2003, PISCATAWAY, NJ, USA,IEEE, 20 October 2003 (2003-10-20), pages 95 - 98, XP010695143, ISBN: 978-0-7803-8157-5 * |
Also Published As
Publication number | Publication date |
---|---|
EP1903602A2 (fr) | 2008-03-26 |
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Owner name: IMEC |
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Effective date: 20090930 |
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Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR |
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Effective date: 20091113 |
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STAA | Information on the status of an ep patent application or granted ep patent |
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18D | Application deemed to be withdrawn |
Effective date: 20130328 |