EP1875502A1 - Method of producing a wall, particularly a wall of a micro heat exchanger, and micro heat exchanger comprising, in particular, nanotubes - Google Patents
Method of producing a wall, particularly a wall of a micro heat exchanger, and micro heat exchanger comprising, in particular, nanotubesInfo
- Publication number
- EP1875502A1 EP1875502A1 EP06755426A EP06755426A EP1875502A1 EP 1875502 A1 EP1875502 A1 EP 1875502A1 EP 06755426 A EP06755426 A EP 06755426A EP 06755426 A EP06755426 A EP 06755426A EP 1875502 A1 EP1875502 A1 EP 1875502A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- particles
- wall
- substrate
- heat exchanger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
- F28F13/185—Heat-exchange surfaces provided with microstructures or with porous coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- Process for producing a wall in particular a micro-heat exchanger, and a micro-heat exchanger, in particular comprising nanotubes
- the present invention relates to the field of semiconductor devices or micro-systems.
- the solution generally proposed to evacuate the heat released is the use of fans installed near the devices and systems for the purpose of cooling them overall.
- the present invention firstly relates to a method of producing a wall, in particular a micro-heat exchanger for semiconductor devices or micro-systems.
- this method consists in: choosing a matrix material capable of passing from a non-solid state to a hardened state under the effect of a state change treatment and, in this hardened state, be altered by the effect of an alteration treatment; and selecting particles of material substantially insensitive to said change of state process and said alteration treatment
- the process according to the invention comprises: mixing a quantity of particles with a quantity of the matrix material in the non-solid state; depositing said mixture, at least in part, on a surface of a substrate; applying said change of state treatment to the deposited mixture to its cured state; applying said alteration treatment to a portion of the volume of the deposited mixture hardened and remove this part of volume or the complementary volume part.
- the wall of the remaining volume portion of the hardened deposited mixture corresponding to the interface between the remaining volume portion and the removed volume portion, is advantageously provided with particles partially anchored in this remaining volume portion. and constituting asperities.
- said mixture is preferably obtained by stirring or stirring.
- said matrix material is preferably a photosensitive thermosetting resin.
- said particles are preferably nanotubes.
- this method preferably consists of: depositing a layer of the mixture on a surface of a substrate; applying said state change processing to said layer to become cured; and applying said weathering treatment to at least one zone of said hardened layer and removing the volume of that zone or complementary zone.
- the method may advantageously consist in applying said alteration treatment to the surface of said substrate.
- the method may advantageously consist in applying said alteration treatment to a superficial portion of said layer.
- the present invention is also obj and a micro-heat exchanger,
- this micro-heat exchanger may advantageously comprise a substrate to be cooled at least locally, a layer formed on at least a portion of a surface of the substrate and particles embedded in said layer, some of which have a portion anchored in a wall of said layer and a portion projecting from said wall.
- this micro-heat exchanger can advantageously comprise a substrate to be cooled at least locally, a layer formed on at least a portion of a surface of the substrate and having at least one trench, at least one cover covering said trench, so as to constitute at least one channel and particles embedded in said layer, some of which present parts anchored in the wall of this channel and projecting parts in this channel.
- FIG. 1 represents a section of a first semiconductor device or micro-system according to FIG. invention
- FIG. 1 shows an enlarged local section of the device of Figure 1;
- FIG. 8 shows a section of a second semiconductor device or micro-system according to the invention.
- a semiconductor device or micro-system 1 which comprises a support consisting for example of a substrate 2 incorporating electronic and / or optical components or other.
- a layer 4 On one side 3 of this substrate 2, is formed a layer 4 in which is formed a trench 5 with side walls 6 perpendicular to the face 3, or several trenches, so that the layer 4 has areas 4a covering the substrate 2 .
- the trench 5 is covered with an attached cover 7 fixed on the outer face of the layer 4, so as to transform this trench 5 into a channel 8.
- one or more covers may be provided.
- the parts 9a of the particles 9 constitute asperities forming extensions of the surfaces of the walls 6 and contribute to a better heat transfer between the layer 4 and the fluid flowing in the channel 8.
- the layer 4 provided with the cover 7 constitutes a micro-exchanger. reported on the substrate 2.
- a matrix material which is capable of passing from a non-solid state to a hardened state under the effect of a change of state treatment and, in this hardened state, to be altered under the effect of an alteration treatment.
- This matrix material may advantageously be a photosensitive thermosetting resin 10.
- nanoparticles are chosen, for example carbon nanotubes, which are substantially insensitive to said state change treatment and to said alteration treatment.
- a quantity of nanotubes 9 in a liquid or solvent 12, physically and chemically neutral vis-à-vis these nanotubes 9 and resin 10, is dispersed in a container 11.
- This step is performed by ensuring mechanical or ultrasonic agitation by any known means.
- a quantity of resin 10 is gradually added in the non-solid state.
- This step is performed by ensuring mechanical mixing by any known means.
- a mixture 13 is then obtained in which the nanotubes 9 are preferably distributed homogeneously in the resin 10 in the non-solid state.
- the mixture 13 is spread on the face 3 of the substrate 2, for example using the centrifugal force, so as to obtain a substantially uniform layer 4, in which are substantially substantially distributed and oriented randomly nanotubes 9.
- the layer 4 is cured by a suitable heat treatment.
- a fourth step shown in FIGS. 6 and 7 local insolation of the portion 4a of the layer 4 is carried out through a mask 14, in the zones that do not correspond to the trench 5 to be produced.
- the volume of the part 4b of the layer 4 corresponding to the trench 5 is removed, for example by immersion in a chemical developer, forming the zones 4a of the remaining volume of the layer 4 and the trench 5.
- the matrix material is a positive resin, it would precede the opposite way.
- the walls 6 of the remaining part 4a of the layer 4 remain, as indicated above, nanotubes 9 oriented randomly, these nanotubes 9 having parts 9a anchored in the material constituting this layer and exposed parts 9b projecting from these walls 6.
- the cover 7 can then be installed.
- the layer 4 could have a thickness equal to about 200 microns and the trench 5 could have a width equal to about a few microns to several millimeters.
- the nanotubes could have a length of about equal to a few micrometers and a diameter approximately equal to a few nanometers.
- FIG. 8 it can be seen that there is shown another semiconductor device or micro-system 100 which comprises a support consisting for example of a substrate 101 incorporating electronic components and / or optical or other.
- a layer 103 for example a resin, in which are embedded microparticles, for example carbon nanotubes 104.
- the wall 105 of the layer 103 consisting of its opposite outer face and parallel at the face 102 of the substrate 101, is provided with some of the nanotubes 104, which, as in the previous example, have parts anchored in the layer 103 and parts protruding from the wall 105, which constitute asperities forming extensions of this wall.
- the heat generated in the substrate 101 can then be discharged through the layer 103, which could be produced locally on areas of this substrate and which constitutes a heat exchanger.
- a mixture 13 is spread on the face 102 of the substrate 101 to form a layer 106 thicker than the layer 103 to obtain. Then, this layer 106 is insulated up to a depth corresponding to the surface 105 of the layer 103 to be obtained. Finally, the volume of the superficial portion of the layer 106 is removed, leaving only the remaining volume of the layer 103.
- the present invention is not limited to the examples described above.
- the materials used for the matrix material and the added micro-particles may be chosen differently.
- the form of the mixture deposited on a substrate can be adapted to the desired heat exchange.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0504340A FR2885210A1 (en) | 2005-04-29 | 2005-04-29 | METHOD FOR PRODUCING A WALL, ESPECIALLY A THERMAL MICRO-EXCHANGER, AND A HEAT MICRO-EXCHANGER, COMPRISING PARTICULARLY NANOTUBES |
PCT/FR2006/000862 WO2006117447A1 (en) | 2005-04-29 | 2006-04-19 | Method of producing a wall, particularly a wall of a micro heat exchanger, and micro heat exchanger comprising, in particular, nanotubes |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1875502A1 true EP1875502A1 (en) | 2008-01-09 |
Family
ID=35427640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06755426A Withdrawn EP1875502A1 (en) | 2005-04-29 | 2006-04-19 | Method of producing a wall, particularly a wall of a micro heat exchanger, and micro heat exchanger comprising, in particular, nanotubes |
Country Status (4)
Country | Link |
---|---|
US (1) | US20100018686A1 (en) |
EP (1) | EP1875502A1 (en) |
FR (1) | FR2885210A1 (en) |
WO (1) | WO2006117447A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10340424B2 (en) | 2002-08-30 | 2019-07-02 | GE Lighting Solutions, LLC | Light emitting diode component |
US8593040B2 (en) | 2009-10-02 | 2013-11-26 | Ge Lighting Solutions Llc | LED lamp with surface area enhancing fins |
JP2013524439A (en) * | 2010-04-02 | 2013-06-17 | ジーイー ライティング ソリューションズ エルエルシー | Light weight heat sink and LED lamp using the same |
US8668356B2 (en) | 2010-04-02 | 2014-03-11 | GE Lighting Solutions, LLC | Lightweight heat sinks and LED lamps employing same |
US8640455B2 (en) * | 2010-06-02 | 2014-02-04 | GM Global Technology Operations LLC | Controlling heat in a system using smart materials |
US9500355B2 (en) | 2012-05-04 | 2016-11-22 | GE Lighting Solutions, LLC | Lamp with light emitting elements surrounding active cooling device |
CN108369931B (en) * | 2015-12-18 | 2021-06-18 | 京瓷株式会社 | Flow path member and semiconductor module |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6436506B1 (en) * | 1998-06-24 | 2002-08-20 | Honeywell International Inc. | Transferrable compliant fibrous thermal interface |
US7132161B2 (en) * | 1999-06-14 | 2006-11-07 | Energy Science Laboratories, Inc. | Fiber adhesive material |
US6311769B1 (en) * | 1999-11-08 | 2001-11-06 | Space Systems/Loral, Inc. | Thermal interface materials using thermally conductive fiber and polymer matrix materials |
EP1430530B1 (en) * | 2001-05-14 | 2009-09-02 | M.Pore Gmbh | Heat exchanger |
DE10253457B3 (en) * | 2002-11-16 | 2004-07-22 | Stiebel Eltron Gmbh & Co. Kg | A heat transfer partition with a structured layer with peaks and valleys especially useful for electric heaters for water heating containers or heat exchangers |
US6864571B2 (en) * | 2003-07-07 | 2005-03-08 | Gelcore Llc | Electronic devices and methods for making same using nanotube regions to assist in thermal heat-sinking |
-
2005
- 2005-04-29 FR FR0504340A patent/FR2885210A1/en not_active Withdrawn
-
2006
- 2006-04-19 WO PCT/FR2006/000862 patent/WO2006117447A1/en active Application Filing
- 2006-04-19 EP EP06755426A patent/EP1875502A1/en not_active Withdrawn
- 2006-04-19 US US11/919,536 patent/US20100018686A1/en not_active Abandoned
Non-Patent Citations (1)
Title |
---|
See references of WO2006117447A1 * |
Also Published As
Publication number | Publication date |
---|---|
FR2885210A1 (en) | 2006-11-03 |
WO2006117447A1 (en) | 2006-11-09 |
US20100018686A1 (en) | 2010-01-28 |
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Legal Events
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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Effective date: 20071025 |
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Effective date: 20080208 |
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DAX | Request for extension of the european patent (deleted) | ||
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: CENTRE NATIONAL DE L Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES Owner name: UNIVERSITE JOSEPH FOURIER |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20111101 |