EP1835544A3 - Semiconductor device and manufacturing method of the same - Google Patents

Semiconductor device and manufacturing method of the same Download PDF

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Publication number
EP1835544A3
EP1835544A3 EP07005474A EP07005474A EP1835544A3 EP 1835544 A3 EP1835544 A3 EP 1835544A3 EP 07005474 A EP07005474 A EP 07005474A EP 07005474 A EP07005474 A EP 07005474A EP 1835544 A3 EP1835544 A3 EP 1835544A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor substrate
openings
resistance
semiconductor device
thinning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07005474A
Other languages
German (de)
French (fr)
Other versions
EP1835544A2 (en
Inventor
Masamichi Yanagida
Koujiro Kameyama
Kikuo Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
System Solutions Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Semiconductor Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of EP1835544A2 publication Critical patent/EP1835544A2/en
Publication of EP1835544A3 publication Critical patent/EP1835544A3/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
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    • H01L29/0642—Isolation within the component, i.e. internal isolation
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    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
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    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Self-Closing Valves And Venting Or Aerating Valves (AREA)
  • Check Valves (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Thinning a semiconductor substrate (1) has been needed for reducing on-resistance in a semiconductor device such as a vertical MOS transistor, IGBT, or the like where a high current flows in the semiconductor substrate (1) in a vertical direction. In this case, the thinning is performed to the extent that the semiconductor substrate (1) does not warp with a heat treatment, so that there is a limitation in reduction of on-resistance. In the invention, openings (11) such as trench holes are formed on a back surface side of a semiconductor substrate (1). Then, a drain electrode (12) is formed being electrically connected with bottoms of these openings (11). In this case, a current path is formed short corresponding to the depths of the openings (11), thereby easily achieving low on-resistance.
EP07005474A 2006-03-16 2007-03-16 Semiconductor device and manufacturing method of the same Withdrawn EP1835544A3 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006072645 2006-03-16
JP2006215906 2006-08-08
JP2007042703A JP2008066694A (en) 2006-03-16 2007-02-22 Semiconductor device, and method for manufacturing it

Publications (2)

Publication Number Publication Date
EP1835544A2 EP1835544A2 (en) 2007-09-19
EP1835544A3 true EP1835544A3 (en) 2008-09-03

Family

ID=38157929

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07005474A Withdrawn EP1835544A3 (en) 2006-03-16 2007-03-16 Semiconductor device and manufacturing method of the same

Country Status (5)

Country Link
US (1) US20070215938A1 (en)
EP (1) EP1835544A3 (en)
JP (1) JP2008066694A (en)
KR (2) KR100875330B1 (en)
TW (1) TW200742077A (en)

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