EP1812787A1 - Procédé et dispositif de détection des zones à risque d'endommagement par flux laser - Google Patents
Procédé et dispositif de détection des zones à risque d'endommagement par flux laserInfo
- Publication number
- EP1812787A1 EP1812787A1 EP05814794A EP05814794A EP1812787A1 EP 1812787 A1 EP1812787 A1 EP 1812787A1 EP 05814794 A EP05814794 A EP 05814794A EP 05814794 A EP05814794 A EP 05814794A EP 1812787 A1 EP1812787 A1 EP 1812787A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- laser
- thermoluminescence
- damage
- optical
- risk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000000904 thermoluminescence Methods 0.000 claims abstract description 47
- 230000003750 conditioning effect Effects 0.000 claims abstract description 24
- 230000005284 excitation Effects 0.000 claims description 35
- 230000004907 flux Effects 0.000 claims description 19
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 3
- 238000001067 thermoluminescence detection Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 description 62
- 239000000463 material Substances 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 230000008569 process Effects 0.000 description 19
- 238000013507 mapping Methods 0.000 description 16
- 230000007547 defect Effects 0.000 description 10
- 239000002243 precursor Substances 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 230000006641 stabilisation Effects 0.000 description 9
- 238000011105 stabilization Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 238000005375 photometry Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000008029 eradication Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
Definitions
- the present invention relates to the detection of areas at risk of damage by laser flow.
- the National Ignition Facility project developed in the United States and the Megajoule laser developed in France are major scientific instruments in which many laser chains (> 192) converge their energy towards a target of millimeter size.
- the optical components on each laser chain are large, typically 400x400 mm 2 and the constituent materials, substrates, optical components are essentially glasses and synthetic silica.
- laser damage may appear on the surface of optical components.
- these damages during subsequent laser firing, grow exponentially.
- the optical function is then altered on a larger surface and the damage, by optical propagation, can even induce further damage to other optical parts of the laser chain.
- the energy transport of the laser beam is no longer provided nominally.
- the appearance of laser damage on the surface of the optical components therefore has the disadvantage of affecting the service life of the optical components as well as the maintenance cost of the laser chains.
- US-B-6,518,539 discloses a processing method for obtaining flow-resistant optical components. laser. Referring to Figure 1, the main steps of the process of US-B-6,518,539 are described.
- step E 0 there is provided a thermal conditioning of the optical part by pulsed UV laser.
- step E 1 there is provided an operation of developing the precursor sites by pulsed UV laser.
- step E 2 a location of the damaged sites is implemented for example by diffusion and invisible camera.
- step E 3 a stabilization of the damaged sites is implemented for example by continuous CO2 laser. Further details of step E 0 ) can be found in US-A-2002/0185611 or US-B-6,705,125 and in step E 3 ) in US-B-6,620,333.
- the optical substrates can be used to reduce the density of precursor sites of surface damage to the components.
- These "mechano-chemical” processes can be supplemented by an "optical” method, in accordance with the step E 0 ), of pulsed UV laser conditioning to further reduce this density of sites that initiate the damage.
- the step E 0 is a succession of scans of the surface of the component with a pulsed UV laser beam whose energy increases as successive scans.
- the optical components are of large size, for example of the order of 1600 cm 2 .
- the density of precursor sites is low, for example 10 ⁇ 2 / cm 2 for a fluence of damage of 10J / cm 2 at the wavelength of 351 nm and for a laser pulse of duration 3 ns in
- step E 1 the optical part has a number of damaged sites. These sites are then identified in step E 2 ) by various methods including the scattering of light from a laser or by intense illumination of the site.
- step E 3 the sites thus identified are "stabilized", that is to say that a method is applied to them which avoids their growth during laser shots subsequent to the nominal fluence.
- the step E 3 ) of stabilizing the damaged sites is for example an etching step by various methods: laser, etching, plasma or other. It should be noted that step E 1 ) of initiation of
- Damage is a step whose result, the damage, is uncontrolled in terms of size, shape and composition.
- Step E 3 is therefore inseparable from step E 1 ) for the use of the optical part.
- the technique of revealing precursor sites is also not without risks.
- the first risk is to increase the damage initiated "minimally" on a site during subsequent shots during the scanning of the optical part by the laser beam. This can occur because of the pointing instabilities or even the peak fluence variability in the laser beam by the use of pulsed lasers.
- the second risk arising from the same difficulties concerning the use of pulse jaser, is not to reveal all the precursor sites during the scanning of the optical part.
- the optical part In order to know the effectiveness of the damage stabilization process, the optical part must be subjected again to step E 1 ) of the process with the risks mentioned above. It should be noted that the efficiency of step E 3 ) is not indicated in US-B-6,518,539.
- thermoluminescence is a non-destructive characterization technique that makes it possible to measure the radiation dose to which a material has been subjected or to analyze the electronic structure of this material.
- thermoluminescence of a material is measured in a thermoluminescence analysis machine. For example, the sample is subjected to a thermal ramp generated by an oven and the luminescence due to this excitation is measured by a photomultiplier.
- thermoluminescence can be induced by locally heating the sample by CO2 laser. This has shown that different materials, lithium fluoride, silica or porcelain subjected to radiation become thermoluminescent. In the absence of radiation, no thermoluminescence is observed in these materials.
- optical components used for power lasers need to be resistant to laser flux.
- laser flux resistance specifications are different.
- the cost of "substrate" materials of optical components, especially if they are large, is important in the cost of a laser chain. In this cost are included the material as well as the one or more surfacing processes that perform the optical polishing of the piece.
- the Applicant has therefore posed the problem of characterizing the surfaces of the optical components, of locating the potentially weak sites or zones by laser damage and of applying a local process which improves the resistance to the laser flux, if it is useful for the component.
- the present invention provides a solution to this problem.
- the method making it possible to non-destructively characterize the surface of an optical substrate is the thermoluminescence mapping of the optical surface to be treated, to identify the zones at risk, followed by a step of thermal conditioning risk areas so identified to prevent damage to them to the laser flow.
- thermoluminescence or thermally induced luminescence is used here in its most general sense: during thermal excitation there is a photon emission at the point of excitation.
- Thermoluminescence can be intrinsic: linked to the physical properties of the material: gap, absorption, thermal conductivity, emissivity for example. With this definition, every body is intrinsically thermoluminescent since, if it is thermodynamic equilibrium, it emits photons according to the law of the black body. Thermoluminescence can be extrinsic if it is due to defects in the material: electronic traps or inclusions for example.
- the definition of thermoluminescence here covers any type of thermally induced luminescence.
- thermoluminescence mapping according to the invention makes it possible to identify or highlight zones (defects) or weak sites in resistance to the laser flux.
- thermoluminescence measurement step is preferably but not limited to the said measurement of thermoluminescence.
- the thermal conditioning of the surface to be treated is a continuous laser thermal conditioning.
- the potential defects are treated by a thermal conditioning using a standard thermal source or identical to that of the thermoluminescence mapping.
- the present invention also relates to a device for detecting areas at risk of damage by laser flow.
- the device comprises means for measuring the thermoluminescence of the surface to be treated, to identify the risk areas and thermal conditioning means of the risk areas thus identified.
- thermoluminescence measuring means comprise a thermal excitation source of the CO 2 laser type.
- thermoluminescence measuring means further comprise detection means arranged in a predetermined geometric relation with respect to the surface to be treated.
- thermoluminescence measuring means further comprise displacement means capable of generating a relative movement between the excitation source and the thermoluminescence detection means with respect to the surface to be treated.
- the excitation source In order for the excitation source to be a source of thermal excitation, the material that is probed must absorb the radiation emitted by the laser so that there is a local rise in temperature. This local temperature rise is all the more important as the thermal conductivity of the scanned material is low.
- the laser beam is focused to a small dimension, for example a beam with a diameter of 300 ⁇ m to 1 / e.
- the emitted photons, other than those of the excitation laser are collected by a photometric device.
- FIG. 1 already described schematically represents the steps of a processing method of the prior art
- FIG. 2 diagrammatically represents a thermoluminescence mapping of a selected treatment sample
- FIG. 3 is a graph illustrating the fluence of damage as a function of the position along the Y axis of the map of FIG. 2;
- FIG. 4 illustrates the advantages of the method according to the invention compared with the method of the prior art of FIG. 1;
- FIG. 5 describes an embodiment of the thermoluminescence mapping using a continuous CO 2 laser according to the invention.
- the surface emissive zone is imaged on a silicon diode.
- At each point of the scanned sample it is possible to associate a photometric signal when moving the excitation source on the sample or conversely the sample in the excitation source.
- This thermoluminescence mapping is presented on a sample of suprasil silica.
- thermoluminescence gradient between the bottom and the top of the map along the Y axis.
- the bottom in white, there is emission of an important signal and at the top, in black, there is no signal emission except for a few specific points.
- the intermediate zone very fine striations are observed.
- the Applicant has tested the resistance to the laser flux at 355 nm wavelength with a pulsed laser according to the R / 1 mode. is a ramp energy until the occurrence of damage in the material. The result is shown in the graph of FIG. 3. With reference to FIG. 3, it can be seen that, by moving on the sample, the damage fluence tends to increase between the strongly luminescent zone of the bottom and the the luminescent zone at the top, the black line is a mark for the eye. The Applicant has therefore established a correlation between the thermoluminescence signal and the laser damage. Where the thermoluminescence signal is high the fluence of damage is lower.
- thermoluminescence signal when it is not irradiated. He has also observed that this thermoluminescence is not homogeneous on the surface of the material and finally there is a correlation between this thermoluminescence and the local resistance to the laser flux.
- thermoluminescent sites On the map presented with reference to FIG. 3, it is possible to determine zones or thermoluminescent sites. These zones or sites can be annealed using the same thermal excitation source at a higher linear power. The annealing process is then a scale-scale thermoluminescence mapping. Ultimately the mapping is reduced to one point and annealing occurs by positioning the excitation laser beam on the thermoluminescent site and increasing the linear power of the excitation beam until a signal setpoint thermoluminescence is reached and then the excitation is cut off. The thermoluminescence of the site after localized thermal annealing can then be measured by reducing the linear power of excitation to the initial characterization value.
- the advantages provided by the present invention are an important simplification of the steps of the method of FIG. 1 for producing optical substrate surfaces resistant to laser flux. This simplification covers different areas. In the first place, in the method according to the invention, the phases of optical component packaging, step E 0 ), and of revealing precursor sites by pulsed UV laser, step Ei), are useless.
- the steps E 1 ), E 2 ) and E 3 ) are indissociable if one wants to use the optical component under laser flow thereafter.
- the method according to the invention can stop at step E 2 ) which is then assimilated to a surface sorting step of the components.
- This may be useful for selecting the best face of an optical component and thus orienting the optical component on the path of a laser beam because it is known that it is the rear face of an optical component that is damaged preferentially.
- This may also be useful for characterizing an optical component surfacing process such as a polishing process since the surface of the material is the result of an interaction between different surfacing processes and the material.
- the thermal conditioning phase of the method according to the invention is located after the step of locating sites or areas at risk for laser damage.
- impulse UV laser optical conditioning is replaced by continuous laser thermal conditioning.
- the use of a continuous laser to perform the thermal conditioning step of the optical component has multiple advantages over the use of a pulsed laser, including greater pointing stability, laser emission mode, and power.
- the steps E 2 ) and E 3 ) can be successively alternated, which makes it possible to characterize the thermoluminescence evolution of the site or zone that is conditioned. It is therefore possible to adapt in situ the conditioning process of the risk zone.
- mapping is reduced to a point, it is even possible to enslave the site conditioning to the thermoluminescence signal by a real-time feedback.
- a simple example is to cut the excitation laser beam when a thermoluminescence signal setpoint is reached.
- another advantage of the method according to the invention lies in the fact that no damage is created on the optical part.
- the damage is created at the fluence F1, but it grows at a fluence F2 ⁇ F1 which forces to stabilize the damaged site if we want to use the optical part at the F1 fluence.
- the laser damage creates extrinsic defects in the optical component: cracks, cracks, flaking, fused material, evaporated material, etc. no parameter, length, composition or other is controlled. Each damage is therefore “unique” because it is not reproducible in the same way. There is therefore no assurance that the stabilization process used is reproducible and 100% effective.
- thermoluminescence excitation source With reference to FIG. 5, an embodiment of the invention has been described with the aid of a continuous CO 2 laser as a thermoluminescence excitation source.
- the emission wavelength of the laser 1 is 10.59 ⁇ m which corresponds to the emission line of the most powerful laser.
- the excitation wavelength must be adapted to the optical material whose thermoluminescence is to be known.
- thermoluminescence exists only if there is a rise in temperature of the optical material, if one looks for intrinsic defects or- a rise in temperature of the extrinsic defect. It is therefore desirable for all or part of the emission spectrum of the excitation source to correspond to the absorption spectrum of the tested material or extrinsic defect.
- all emission lines of the COz laser 9.2 to 10.8 ⁇ m can be used.
- the power stability of the excitation source must be good: typically + -1%, minimum at most, over the duration of the mapping.
- the laser emission mode may be arbitrary, Gaussian, flat, annular, etc., but it must be stable so as not to disturb the spatial resolution of the map.
- the power required to excite the luminescence is a linear power which depends on the spatial resolution that one wants to obtain on the sample, typically less than 20 watt when the spatial resolution is smaller than one mm.
- the excitation source may be any other laser source, lamp, black body whose spectral emission is wholly or partially absorbed by the test material.
- Thermal conditioning can be aided by the use of a process gas: oxygen, argon or other.
- a device 2 for controlling and stabilizing the power of the laser 1 comprises a laser power amplifier which can consist of a half-wave plate 2A followed by a polarizer 2B.
- the drive makes it possible to adjust the excitation power to a setpoint and thus to switch from a characterization mode to a conditioning mode of the optical component.
- the control and stability device 2 may be completed by a shutter (not shown) which does or does not pass the laser beam and a laser power meter (not shown) which makes it possible to verify that the power setpoint has been reached. .
- the control and stability device 2 may include a stabilization device (not shown) in real time of the power of the excitation laser.
- the optical device further comprises a focusing lens 3, for example made of anti-reflection ZnSe at the excitation wavelength.
- the focal length of the lens 3 is adapted to the focal spot that is to be obtained on the component 4 under test.
- the size of the focal spot on the surface of the sample 4 can be determined by the knife method.
- the surface of the optical component 4 to be tested is arranged facing the incident laser beam.
- the process according to the invention is well suited to optical materials with low thermal conductivity, typically less than 1OW / (mx K) which have a greater local temperature rise with given incident power and a low thermal diffusivity which makes it possible not to degrade the mapping spatial resolution too much.
- Materials such as fused silica, all types of doped or undoped glass and laser crystals, and materials such as KDP used for frequency conversion are materials upon which this process can be adapted.
- a photometry device 5 collects the photons emitted by the thermoluminescent zone. With reference to FIG. 5, it is placed behind the sample 4 under test.
- This arrangement has the advantage of filtering the excitation photons since the silica absorbs the radiation at 10.59 ⁇ m and the detection can be in the range of transparency of the silica, that is to say between 0.2 and 4 ⁇ m in length. wave which gives way to many types of sensors, photomultipliers, silicon, InGaAs, PbSe, HgCdTe, etc. in the form of monoelement or camera.
- the photometry device 5 may be disposed anywhere else, except to intercept the excitation beam. The advantage of putting the photometry device 5 in the front face is to benefit from a spectral detection range extending far infrared.
- the detector 5 used is a silicon diode.
- the magnification of the zoom image of the thermoluminescent zone on the sensor is advantageously adapted to both the spatial excitation resolution and the spatial resolution of the photometry sensor 5.
- thermoluminescence mapping is performed by moving the sample in the laser beam or the laser beam on the sample by appropriate displacement means (not shown).
- thermoluminescence mapping can be made by taking multiple sub-images. At fixed spatial resolution, it may be necessary to increase the excitation power as the scanning speed increases.
- the sample scan is two-dimensional if the excitation is punctual.
- gain in mapping time it may be useful to have a linear excitation source, the sample sweep is then in the direction perpendicular to the axis of the excitation source, or three-dimensional, it does not then there is no need to sweep the sample. The power density homogeneity inside the thermal excitation beam remains correct.
- the method according to the invention can be used to characterize the surface of an optical component at different stages of a polishing process and thus to develop the method for application of strong laser or other fluxes.
- the polishing steps can be conducted sequentially on the same optical part, which offers a gain on the material cost and reduces the experience plan.
- the method according to the invention can be used for sorting and selecting the optical faces in the path of a laser beam.
- the optical components used in transmission it is advisable to choose the best face, the one that best fits the laser flux, as the backside of optical component.
- the poorer components can be positioned at locations in the laser chain where laser flux resistance specifications are relaxed.
- the ability to sort and order optical components for a laser flux resistance specification can be a great source of savings on the maintenance and service life of laser system components.
- the material cost, for example synthetic silica, for large optical components is important. It is conceivable to replace synthetic silica substrates by glasses whose manufacturing cost is much lower and whose surfaces have been treated according to the process according to the invention.
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- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0412304A FR2878331B1 (fr) | 2004-11-19 | 2004-11-19 | Procede et dispositif de detection des zones a risque d'endommagement par flux laser |
| PCT/FR2005/002755 WO2006053959A1 (fr) | 2004-11-19 | 2005-11-04 | Procédé et dispositif de détection des zones à risque d'endommagement par flux laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1812787A1 true EP1812787A1 (fr) | 2007-08-01 |
Family
ID=34953101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP05814794A Withdrawn EP1812787A1 (fr) | 2004-11-19 | 2005-11-04 | Procédé et dispositif de détection des zones à risque d'endommagement par flux laser |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20080302978A1 (fr) |
| EP (1) | EP1812787A1 (fr) |
| FR (1) | FR2878331B1 (fr) |
| WO (1) | WO2006053959A1 (fr) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4638163A (en) * | 1984-09-20 | 1987-01-20 | Peter F. Braunlich | Method and apparatus for reading thermoluminescent phosphors |
| US4667101A (en) * | 1985-02-04 | 1987-05-19 | The United States Of America As Respresented By The United States Department Of Energy | Predicting threshold and location of laser damage on optical surfaces |
| US6518539B2 (en) * | 2000-10-23 | 2003-02-11 | The Regents Of The University Of California | Method for producing damage resistant optics |
| US6620333B2 (en) * | 2000-10-23 | 2003-09-16 | The Regents Of The University Of California | CO2 laser and plasma microjet process for improving laser optics |
| US6705125B2 (en) * | 2000-10-23 | 2004-03-16 | The Regents Of The University Of California | Reduction of damage initiation density in fused silica optics via UV laser conditioning |
| WO2002098811A1 (fr) * | 2001-06-04 | 2002-12-12 | The Regents Of The University Of California | Procede combine de finition et de conditionnement par laser ultraviolet pour produire des elements optiques resistant a la deterioration |
-
2004
- 2004-11-19 FR FR0412304A patent/FR2878331B1/fr not_active Expired - Fee Related
-
2005
- 2005-11-04 EP EP05814794A patent/EP1812787A1/fr not_active Withdrawn
- 2005-11-04 US US11/719,716 patent/US20080302978A1/en not_active Abandoned
- 2005-11-04 WO PCT/FR2005/002755 patent/WO2006053959A1/fr not_active Ceased
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2006053959A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2878331A1 (fr) | 2006-05-26 |
| FR2878331B1 (fr) | 2007-05-11 |
| WO2006053959A1 (fr) | 2006-05-26 |
| US20080302978A1 (en) | 2008-12-11 |
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