EP1807556A2 - METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATES - Google Patents
METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATESInfo
- Publication number
- EP1807556A2 EP1807556A2 EP05746524A EP05746524A EP1807556A2 EP 1807556 A2 EP1807556 A2 EP 1807556A2 EP 05746524 A EP05746524 A EP 05746524A EP 05746524 A EP05746524 A EP 05746524A EP 1807556 A2 EP1807556 A2 EP 1807556A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- sige
- precursor
- layer
- substrate
- gaseous precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 95
- 229910008310 Si—Ge Inorganic materials 0.000 title claims abstract description 49
- 239000000463 material Substances 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims description 78
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 239000002243 precursor Substances 0.000 claims abstract description 78
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 40
- 230000007547 defect Effects 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 24
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 239000000872 buffer Substances 0.000 claims abstract description 22
- 239000002096 quantum dot Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 claims description 13
- 230000001427 coherent effect Effects 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 4
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052986 germanium hydride Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 16
- 238000009826 distribution Methods 0.000 abstract description 12
- 238000011161 development Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000010348 incorporation Methods 0.000 abstract description 5
- 150000004678 hydrides Chemical class 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000000877 morphologic effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 110
- 239000010408 film Substances 0.000 description 72
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 21
- 230000008021 deposition Effects 0.000 description 16
- 238000001228 spectrum Methods 0.000 description 15
- 230000037230 mobility Effects 0.000 description 13
- 230000004913 activation Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- WHYHZFHCWGGCOP-UHFFFAOYSA-N germyl Chemical compound [GeH3] WHYHZFHCWGGCOP-UHFFFAOYSA-N 0.000 description 10
- 238000001340 low-energy electron microscopy Methods 0.000 description 10
- 238000001000 micrograph Methods 0.000 description 10
- 230000003746 surface roughness Effects 0.000 description 9
- 229910006990 Si1-xGex Inorganic materials 0.000 description 8
- 229910007020 Si1−xGex Inorganic materials 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000004630 atomic force microscopy Methods 0.000 description 8
- 229910003828 SiH3 Inorganic materials 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 7
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- 238000001069 Raman spectroscopy Methods 0.000 description 6
- 238000001237 Raman spectrum Methods 0.000 description 6
- 229910008045 Si-Si Inorganic materials 0.000 description 6
- 229910006411 Si—Si Inorganic materials 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 6
- 238000003795 desorption Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000005204 segregation Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- OLRJXMHANKMLTD-UHFFFAOYSA-N silyl Chemical compound [SiH3] OLRJXMHANKMLTD-UHFFFAOYSA-N 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- -1 Hydride Compounds Chemical class 0.000 description 3
- 238000000089 atomic force micrograph Methods 0.000 description 3
- 230000005465 channeling Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000001534 heteroepitaxy Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005926 GexSi1-x Inorganic materials 0.000 description 2
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004469 SiHx Inorganic materials 0.000 description 1
- 229910020751 SixGe1-x Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000603 solid-source molecular beam epitaxy Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003887 surface segregation Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
Definitions
- Patent Application No. 60/610,120 filed on September 14, 2004, entitled "Synthesis of new compositions of matter in the (H 3 Ge) 4-x SiH x (x 0-3) family of Si-Ge hydrides: Novel pathways to Ge-rich Gei -x Si x heterostructures and nanostructures on Si" and naming as inventors John Kouvetakis, Ignatius S. T. Tsong, Jose Menendez, John Tolle, Cole J. Ritter III and Chang Wu Hu, the disclosure of which is incorporated herein by this reference.
- This invention relates generally to semiconductor materials. More particularly, it relates to a method for growing epitaxial Ge-rich SiGe layers on Si substrates using single source (H 3 Ge) x SiH 4-x precursor compounds incorporating SiGe, SiGe 2 , SiGe 3 and SiGe 4 building blocks.
- MBE molecular beam epitaxy
- UHV-CVD ultrahigh vacuum chemical vapor deposition
- gas-source MBE utilizing common hydrides such as silane (SiH 4 ) and germane (GeH 4 ) or disilane (Si 2 H 6 ) and digermane (Ge 2 H 6 ).
- the first is the formation of strained, defect-free Sii -x Ge x films, which may take the form of strained layer superlattices, as described by J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara and I. K. Robinson, "Ge x Sii- x /Si strained-layer superlattice grown by molecular- beam epitaxy", J. Vac. Sci. Technol. A, vol. 2, No. 2, 1984, pp. 436-440.
- the second is the growth of coherent islands and quantum dots.
- Sii -x Ge x alloys across the entire compositional range is highly desirable to achieve comprehensive band gap and strain engineering in the Si-Ge system.
- Materials with Ge rich concentrations are particularly desirable for the development of virtual substrates and buffer layers on Si for numerous device applications based on strained group TV materials and for integration of III-V and II-VI optical semiconductors with Si electronics.
- Si 1- ⁇ Ge* layers with strain-free microstructure and variable compositions and lattice constants are currently used in industrial processes as virtual substrates for growth of high mobility electronic devices based on strained Si and Ge films (channels). See M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leitz, and E. A.
- CMOS complementary metal on oxide semiconductor
- CMOS devices are subsequently built on top of the strained Si channel using conventional CMOS processing.
- the Si 1 - ⁇ Ge* buffer layers and virtual substrates need to fulfill a number of materials requirements such as low dislocation densities, low surface roughness as well as uniformity of strain, Ge content, and layer thickness. Low surface roughness and reduced threading defect densities are particularly important to ensure a uniform spatial stress distribution in the Si and Ge overlayer channels, and to prevent interface scattering which can compromise the strained-enhanced carrier mobility.
- Si 1 - X Ge x buffer layers on Si are based on growth of thick compositionally graded films in which the Si and Ge content in the buffer layer is varied up to 100 % Ge.
- the misfit strain between the Si 1-x Ge x epilayer and Si substrate is gradually relieved with increasing film thickness, as described by Y. J. Mii, Y. H. Xie, E. A. Fitzgerald, D. Monrow, F. A. Thiel, B. E. Weir, and L. C. Feldman, "Extremely high electron-mobility in Si/Ge x Si 1-x structures grown by molecular-beam epitaxy", Appl. Phys. Lett. vol. 59, No. 13, Sep 1991, pp. 1611- 1613; P.
- Currie, et al. for a 50% Ge concentration a layer thickness of 5-10 ⁇ m is required to achieve material having dislocation densities of 6 ⁇ 10 cm “2 and surface roughness with RMS values of ⁇ 30 nm.
- the defect densities and film roughness become much worse due to the increase in the lattice mismatch.
- This requires an even greater film thickness to achieve acceptable defect densities and a chemical-mechanical polishing (CMP) step to smoothen the surface before growing additional device structures.
- CMP chemical-mechanical polishing
- the method includes introducing near the surface of the substrate the gaseous precursor comprising (H 3 Ge) x SiH 4 .
- the gaseous precursor can be introduced in pure form or intermixed with an inert carrier gas. Suitable inert carrier gases include H 2 and N 2 .
- the gaseous precursor can be deposited by low pressure CVD, UHV- CVD or gas source MBE and can be introduced at relatively low temperature in a range, from about 25O 0 C to about 700 0 C, and at a pressure in a range from about 1 x 10 "7 Torr to at least about 5 Torr.
- the gaseous precursor can be introduced as a single gas source or as a mixture comprising (H 3 Ge) x SiH 4-x and a germanium hydride, a silicon hydride or a silicon hydride- halide.
- the method can be used to deposit on a substrate a layer comprising an epitaxial Si-Ge material formed as a strained or strain free layer having a planar surface or as coherent islands or quantum dots.
- the substrate can be a silicon substrate, such as Si(IOO).
- the SiGe x layer can be formed as a strained or strain free layer having a planar surface or it can be formed as quantum dots or coherent islands.
- the SiGe x layer can have an atomically planar surface morphology, a thickness less than one micron and a threading defect density of less than 10 5 /cm 2 .
- the Si-Ge layer can be doped with an element selected from the group consisting of boron, arsenic, phosphorus, antimony and an indium.
- the silicon substrate can be patterned to form a template for selective growth of semiconductors.
- the method of our invention provides a new low-temperature growth process leading to Ge-rich films with low defect concentrations and smooth surfaces.
- the mobility of Ge on the growth surface is much lower, thereby preventing mass segregation which in turn can lead to compositional and strain variations in the film.
- the mass segregation of dopants is negligible at low temperatures, which is particularly beneficial for development of devices that require layers with low thickness.
- the deposited Si-Ge materials possess the required morphological and microstructural characteristics for applications in high frequency electronic and optical systems, as well as templates and buffer layers for development of commercial devices based on high mobility Si and Ge channels. They can circumvent the need for previously-known compositionally graded Si x Ge 1-x buffer layers and lift off technologies by providing suitable SiGe layers having a uniform composition throughout the layer.
- FIG. 2 is set of micrographs of a layer with a stoichiometric SiGe composition grown on Si(IOO) according to the present invention, including: (top) a bright field cross-sectional transmission electron microscopy (XTEM) micrograph of the entire layer thickness; (bottom left) a micrograph of the interface region showing perfect epitaxial alignment between Si(IOO) and SiGe; and (bottom right) a micrograph showing SiGe growth on a step at the interface in which an edge dislocation that is parallel to the interface plane is visible in the vicinity of the step.
- XTEM transmission electron microscopy
- FIG. 3 is a set of low-energy electron microscopy (LEEM) images showing layer-by-layer growth of SiGe 2 on Si(IOO) according to the invention, including images showing: (a) the morphology of a clean surface; (b) deposition of the first layer; (c) the second layer; and (d) the third layer.
- LEEM low-energy electron microscopy
- FIG. 4 is a graph showing the temperature dependence of the first layer growth rates for SiH 3 GeH 3 , SiH 2 (GeH 3 ) 2 , SiH(GeH 3 ) 3 and Si(GeH 3 ) 4 precursors according to the invention, as well as for GeH 3 GeH 3 for comparison.
- FIG. 5 is an XTEM micrograph of a SiGe 2 layer grown on Si(IOO) according to the invention, showing that threading dislocations are concentrated at the interface region and do not propagate to the film surface, and that the layer is highly uniform in thickness and displays an atomically smooth and continuous surface morphology.
- FIG. 6 shows Rutherford backscattering (RBS) random (upper trace) and aligned (lower trace) spectra of a 200 lira SiGe 2 film grown on Si(IOO) according to the invention.
- FIG. 7 shows Raman spectra of SiGe 2 (bottom) and SiGe 3 (top) showing the characteristic Ge-Ge, Si-Ge and Si-Si peaks indicating fully relaxed materials.
- the SiGe 2 spectrum (bottom) also includes an additional sharp peak corresponding to the Si substrate
- FIG. 8 is a bright field XTEM image of a strain-free and atomically smooth SiGe 3 layer grown on Si(IOO) according to the invention, with an inset atomic resolution Z-contrast image of the interface region showing a well defined, abrupt and perfectly epitaxial interface microstructure.
- FIG. 9 shows RBS random (upper trace) and aligned (lower trace) spectra of a SiGe 3 (001) layer grown at 38O 0 C according to the invention.
- FIG. 10 is a XTEM image showing the atomically flat top surface of a
- SiGe 4 film according to the invention is SiGe 4 film according to the invention.
- FIG. 11 shows RBS random (upper trace) and aligned (lower trace) spectra of a SiGe 4 (001) layer according to the invention with a thickness of 0.5 ⁇ m.
- FIG. 12 is a set of micrographs showing SiGe 3 quantum dots grown on
- Si(IOO) including: (top) a bright field XTEM micrograph showing the highly coherent (no threading defects) SiGe 3 quantum dots of uniform size; (bottom left) a high-resolution Z-contrast image of the interface region showing perfect epitaxial alignment as well as a sharp and uniform interface; and (bottom right) an AFM image showing an ensemble of dome-shaped islands with a narrow size distribution and including an inset enlarged view showing the faceted islands.
- PCT/US04/43854 Their high volatility and facile reactivity make them particularly useful as precursors in low temperature (300 - 45O 0 C) film growth.
- a notable result is the precise control of the composition at the atomic level via incorporation of the entire Si/Ge framework of the precursor into the film at unprecedented low growth temperatures (300°C-450°C).
- Targeted deposition experiments of the precursor compounds have been conducted in the temperature range of about 300-700 0 C to delineate the parameter space for growth of device quality films and quantum dots directly on silicon substrates.
- the films are obtained in the low temperature range and fulfill crucial requirements as suitable candidates for development of lattice engineered "virtual substrates" on Si.
- Potential applications include integration of strained Si and Ge channel devices on silicon exhibiting extremely high electron and hole mobilities.
- depositions of the precursors yield assemblies of three-dimensional coherently strained islands (quantum dots) reflecting the stoichiometry of the precursor in all cases without any segregation of either Ge or Si
- the material morphology in our films can be controlled by the adjustment of a single parameter, i.e. the growth temperature at a given flux rate of the unimolecular source.
- a single parameter i.e. the growth temperature at a given flux rate of the unimolecular source.
- depositions of the precursors at 300 0 C - 45O 0 C produce exclusively relaxed layers with planar surfaces.
- FIGs. 2, 5, 8 and 10 show exemplary films of SiGe (partially relaxed), SiGe 2 , SiGe 3 and SiGe 4 , respectively, grown according to the invention.
- the layers obtained using the method of our invention at deposition temperatures in a range of 300 0 C - 45O 0 C are of much higher quality than those with comparable thickness and compositions previously obtained using conventional sources under similar conditions.
- Our films display low threading defect densities with the bulk of the defects concentrated at the Si interface. They grow strain free and highly planar, circumventing entirely the need for graded compositions or lift-off technologies and post-growth chemical mechanical polishing to smoothen their surface. Highlights of the successful fabrication of these films include: (i) unprecedented low temperature synthesis (300°C-450°C), (ii) atomically smooth and defect-free surface morphology (mismatch induced defects are primarily concentrated at the interface), (iii) strain-free microstructure, and (iv) excellent thermal stability of layer planarity. These materials therefore fulfill the crucial requirements as suitable candidates for development of lattice engineered "virtual substrates" with lattice parameters in the 5.5 A to 5.65 A range.
- FIG. 12 shows an exemplary set of SiGe 3 quantum dots grown according to the invention at 600 0 C. Growth of SiGe x Layers on Silicon
- CVD chamber equipped with a low-energy electron microscope (LEEM) for in situ real time observation of the growth process.
- the base pressure of the chamber was 2 x 10 "10 Torr.
- Film growth was obtained by exposing the substrate surface to the gaseous precursor admitted via a leak valve. Partial pressures in the W '7 and IO '6 Torr range were used for deposition.
- the flux of the precursor was delivered via a glass inlet tube, which passed through the apertures in the objective lens of the LEEM.
- the inlet tube was positioned at 2.5 cm from the substrate at an angle of 16° to its surface.
- the substrates were p-type Si(IOO) (p -50 ⁇ cm) and were prepared for epitaxy by repeated flashing at 1240°C to vaporize the native oxide layer from the substrate surface. Heating of the substrate was provided via electron bombardment from a heated filament on the backside of the sample.
- (H 3 Ge) 4 Si compounds dissociated on the Si surface via complete H 2 elimination at 450, 400, 350 and 300 0 C 3 respectively, to produce films at growth rates of 2-3 nm/min.
- Rutherford backscattering (RBS) in random mode indicate film compositions of SiGe, SiGe 2 , SiGe 3 and SiGe 4 , respectively, in agreement with the elemental content of the Si/Ge framework of the corresponding precursors.
- the RBS channeled spectra show that the Si and Ge atoms in the structure channeled remarkably well despite the low growth temperature, which is consistent with monocrystalline materials in epitaxial alignment with the Si substrate.
- the x- ray reciprocal space map measurements showed an elongation along the "c" direction consistent with a tetragonal distortion.
- the calculated strain was in the 60-70 % range.
- Remarkably similar strain values were determined from Raman shifts of the Si-Si, Si-Ge and Ge-Ge phonon modes.
- Raman was used to investigate the distribution of strain in these SiGe layers, by measuring the phonon frequencies using laser lines with different penetration depths. The results showed that the Raman peaks did not change with depth indicating that the strain does not vary across the layers.
- the characterization of our Si-Ge materials revealed growth of crystalline, highly epitaxial, smooth, continuous and uniform alloy layers with Ge-rich concentrations and uniformly stressed or strain-relaxed microstructures.
- a key to the successful synthesis of our films is the unprecedented low growth temperatures which reduce surface mobility of the Si and Ge atoms and prevent mass segregation thereby resulting in highly uniform compositional and strain profiles at the atomic level.
- the incorporation of the entire Si-Ge molecular core promotes the formation of exceptionally uniform bonding arrangements over the entire crystal, leading to relaxed films with planar surface morphology (no surface ripples).
- FIG. 12 shows a representative AFM image of islands grown at 600 0 C using (H 3 Ge) 2 SiH 2 .
- the islands are primarily dome-shaped and reasonably uniform in size with an approximate density distribution of ⁇ 3 x 10 8 cm "2 .
- the bright field XTEM micrographs showed ensembles of coherent islands with defect free microstructure and with a narrow size distribution.
- the microstructural properties of the islands were explored via Z- contrast imaging performed on a JEOL 2010F. These experiments confirmed the presence of distinct islands grown on the substrate surface via a wetting layer of uniform thickness as shown for a representative sample produced by (H 3 Ge) 3 SiH. Note that in Z-contrast images the intensity is proportional to Z 1 ' 7 , consequently the Ge containing islands as well as the wetting layers appear considerably brighter than the underlying Si.
- FIG. 12 is also representative of the most commonly found quantum dot microstructure showing a perfectly sharp and uniform interface.
- the highly coherent nature (no defects are observed) of the quantum dots grown by our method is confirmed by the Raman spectra, which show that the islands are highly strained, as expected due to the lattice mismatch of the dots with the substrate.
- compositions of the islands were found to be SiGe 2 , SiGe 3 and SiGe 4 , reflecting the stoichiometries of the unimolecular precursors (H 3 Ge) 2 SiH 2 , (H 3 Ge) 3 SiH and (H 3 Ge) 4 Si, respectively, used for growth.
- EELS compositional profiles across the dots revealed remarkably uniform elemental distributions at the nanometer scale.
- An important advantage with regard to composition is that there is no apparent mixing of the elements across the interface as is typically observed when pure Ge islands are grown on Si at T>550°C. This type of Si interdiffudision from the substrate into Ge islands represents the most commonly reported method to form Si-Ge quantum dots on Si with Ge>50 at.%.
- FIG. 3 shows an exemplary sequence of LEEM images of SiGe 2 on Si(IOO) produced via CVD of SiH 2 (GeH 3 ) 2 , showing the layer-by-layer deposition.
- image (a) shows the morphology of the clean Si surface
- image (b) shows the deposition of the first full monolayer
- image (c) shows the second full monolayer
- image (d) shows the third full monolayer.
- the field of view is 8 mm.
- a contrast reversal in the (2 x 1) and (1 x 2) terraces is observed indicating a layer-by-layer growth. After the fourth monolayer the LEEM contrast became diffuse presumably due to new growth of incomplete layers.
- FIG. 4 is a graph showing plots of the temperature dependence of the first layer growth rates for H 3 GeSiH 3 , (H 3 Ge) 2 SiHa, (H 3 Ge) 3 SiH and (H 3 Ge) 4 Si as well as for H3GeGeH3.
- the plots show growth rates for a range of temperatures from about 420°C to about 54O 0 C and a gas pressure of about 1.0 x 10 "6 Torr.
- SiH 3 GeH 3 is essentially a compositional hybrid of (SiH 3 ) 2 and (GeH 3 ) 2 , i.e. (SiH 3 ) 2 + (GeH 3 ) 2 -> 2 (SiH 3 GeH 3 ).
- SiGe layers were accomplished via gas source MBE with a precursor flux of 5xlO '5 Torr and at a temperature of 48O 0 C. Above this temperature strained islands (quantum dots) were obtained rather than smooth layers.
- the films were examined ex situ by AFM, XRD, Raman scattering, RBS, and high-resolution XTEM. The elemental concentration, thickness and crystallinity of SiGe were determined by RBS.
- the random backscattering spectra indicate a film thickness ranging up to 100 nm and a Ge content of 50 at. % in agreement with the elemental content of the GeSi framework of the corresponding H 3 GeSiH 3 precursor.
- the aligned spectra indicated highly crystalline material in epitaxial alignment with the substrate.
- X-ray diffraction showed a single sharp peak corresponding the (004) reflection of the cubic structure.
- High resolution XRD, including reciprocal space maps of the (004) and (224) reflections revealed a partially strained layer in perfect epitaxial alignment with the substrate.
- XTEM examinations confirm crystalline and highly epitaxial growth of smooth, continuous and uniform SiGe layers.
- TEM bright field images show that films with 100 nm thicknesses are free of threading dislocations.
- a systematic survey of samples showed no defects penetrating through the layers within a field of view of - 1.5 ⁇ m in TEM micrographs.
- the upper limit of threading dislocations in this case is less that 10 5 -10 6 /cm 2 which is unusual for a material with 50 at. % Ge directly grown on Si.
- the Raman spectra showed the three main features that correspond to the "Ge-Ge", “Si-Ge” and “Si-Si” lattice vibrations at frequencies 295.8 cm “1 , 414.3 cm '1 and 497.7 cm “1 , respectively. These measured values are significantly blue shifted with respect to the expected positions for a strain free Sio. 5O Geo. 5o alloy, which are calculated to be at 293 cm “1 , 410.5 cm “1 and 492.2 cm “1 , respectively. The Raman shifts indicate that there must be a substantial residual strain in the material. Analysis of data acquired using laser lines with variable penetration depths showed that the frequencies of the Si-Si, Ge-Ge and Si-Ge phonon modes are the same throughout indicating a uniform distribution of the strain in the layers.
- FIG. 2 shows an example set of micrographs of a SiGe layer grown on a Si(IOO) substrate according to our invention.
- the top image of FIG. 2 is a bright field XTEM micrograph of the entire thickness of the SiGe layer, which shows the absence of threading defects within the field of view.
- the bottom left image shows the interface region having perfect epitaxial alignment between the Si(IOO) substrate and the SiGe layer.
- the bottom right image shows an edge dislocation close to a step region at the interface. These defects are typically located at a step on the Si surface and partially relieve the strain due to the mismatched Si and SiGe materials.
- the elemental concentration and film thickness of the SiGe 2 layers were determined by RBS in random mode.
- the crystallinity and epitaxial alignment were examined by ion channeling.
- FIG. 6 shows the random and aligned backscattering spectra for a sample grown at 48O 0 C having a film thickness of 400 run and a Ge content of 67% in perfect agreement with the Ge content of the Ge 2 Si framework of the (H 3 Ge) 2 SiH 2 compound.
- the film concentration as measured by RBS is constant with film thickness.
- the ratio of the aligned versus the random peak heights ( ⁇ m in), which measures the degree of crystallinity across the layer, is relatively low ranging from 27% at the interface to 7% near the surface.
- FIG. 6 shows the RBS spectrum of 200nm SiGe 2 film on Si(IOO). The sharp drop of the ⁇ i n value from 27% at the interface to 7% at the surface illustrates that the defects concentration decreases dramatically with increasing the film thickness.
- the XTEM images also show that the films are atomically flat which is confirmed by AFM images in contact mode.
- the as grown materials with thickness of 40 nm and 400 nm display RMS values of 0.4 nm and 1.2 nm, respectively, for areas in the range of 5X5 ⁇ m 2 to 10X10 ⁇ m 2 . These RMS values are remarkably lower than those reported previously for compositionally graded techniques ( ⁇ 30 nm) as well as other MBE methods utilizing Si and SiGe nucleation layers (-2.4 nm).
- the unstrained lattice parameter of the layer ⁇ si Ge is related to the in-plane lattice parameter ( ⁇
- siGe) and perpendicular lattice parameter (aisiGe) by the relation ⁇ siGe a ⁇ [ ⁇ —2 y (a ⁇ a ⁇ )i /a ⁇ (l + v)] in which v is the Poisson ratio of Si-Ge (0.27-0.28).
- v the Poisson ratio of Si-Ge (0.27-0.28).
- the lattice constant of a 400-nm-thick Si o . 33 Geo. 67 layer is extremely close to the values of unstrained relaxed film.
- the Raman spectrum of the Si 0 . 33 Ge 0 . 67 films (bottom) shows the characteristic peaks corresponding to Ge-Ge (296 cm “1 ), Si-Ge (407 cm “1 ) and Si-Si (478 cm “1 ) lattice vibrations. The peak positions are consistent with fully relaxed material.
- Annealing experiments were performed to establish the thermal stability of the epilayers at temperatures between 480 0 C and 750 0 C, a range well within actual device processing temperatures.
- the XRD lattice constant, the ⁇ m j n values of the RBS aligned spectra, and the AFM surface roughness were measured for the annealed samples and compared with the values of the as grown materials. Samples with a thickness of 400 nm do t not show any increase in surface roughness (rms) even after annealing at 750 0 C for 14 hours.
- FIG. 8 shows an XTEM image of a strain-free and atomically smooth SiGe 3 layer grown on Si(IOO) according to our invention. As shown in FIG. 8, defects are concentrated in the lower portion of the layers and most annihilate within 10 nm above the interface.
- FIG. 9 shows the RBS aligned spectrum of a SiGe 3 (OOl) layer grown at 38O 0 C.
- the ⁇ m i n is 25% at the SiGe/Si interface and decreases to 9% at the surface.
- the sharp peak at the interface indicates high concentration of defects which annihilate toward the surface.
- FIG. 8 showed sharp and well defined interfaces with perfectly epitaxial microstructures in which the 111 lattice planes of the film and the substrate are completely commensurate.
- the inset of FIG. 8 is an atomic resolution Z-contrast image showing a well defined, abrupt and perfectly epitaxial interface microstructure.
- the Raman spectrum of the Si o . 25 Geo. 75 films (FIG. 7 top) displays the characteristic Ge-Ge, Si-Ge and Si-Si peaks and the corresponding frequencies indicate a fully relaxed material.
- the x-ray diffraction data provided further confirmation of strain free material growth in the SiGe 3 system.
- the experimental lattice parameters matched the theoretical values which were determined using Vegard's Law.
- SiGe 4 i.e., Sio. 2O Ge o . 8O
- Si(IOO) was conducted by thermal dehydrogenation via CVD and gas source MBE of Si(GeH 3 ) 4 at 380 0 C - 300 0 C and 5xlO "6 Torr precursor pressure. Under these conditions smooth and uniform layers were obtained at reasonable growth rates of 2 nm /minute.
- the AFM RMS for all films were in the range of 1.0-1.5 nm for scans covering 5.0 ⁇ m x 5.0 ⁇ m areas.
- FIG. 10 is an XTEM image showing the atomic flat top surface of SiGe 4 film.
- FIG. 11 shows RBS random and aligned spectra (lower trace) of a Si 020 Ge 0 80 (001) layer with a thickness of 0.5 ⁇ m.
- the ion channeling data suggested that the defects are predominately concentrated at the interface while the upper portion of the film is relatively defect free.
- the XTEM bright filed images confirmed the pile up of defects at the interface and revealed highly coherent layer thickness and perfectly planar surfaces (see FIG. 10).
- XRD analysis gave the expected Vegard's values for the lattice constants indicating strain free growth as expected.
- the method of the present invention can be used to grow Si-Ge materials on substrates other than Si substrates, such as for example glass substrates.
- the facile reactivity of (H 3 Ge) 2 SiH 2 , (H 3 Ge) 3 SiH and (H 3 Ge) 4 Si paves the way to growing SiGe materials on specialty substrates that can withstand processing as high as 300 0 C, such as plastic substrates used for flexible displays.
- the method can be used to form a SiGeN layer by mixing the precursor with a nitrogen source to create the SiGeN layer.
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US66077905P | 2005-03-11 | 2005-03-11 | |
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JP5265377B2 (en) | 2005-11-23 | 2013-08-14 | アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ | Novel silicon germanium hydride, its production and use |
CN101365648B (en) * | 2005-11-23 | 2012-09-26 | 亚利桑那董事会,代表亚利桑那州立大学行事的法人团体 | Silicon-germanium hydrides and methods for making and using same |
WO2007062056A2 (en) * | 2005-11-23 | 2007-05-31 | The Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University | Silicon-germanium hydrides and methods for making and using same |
KR101501700B1 (en) | 2007-04-02 | 2015-03-11 | 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 | Novel methods for making and using halosilylgermanes |
US7915104B1 (en) | 2007-06-04 | 2011-03-29 | The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Methods and compositions for preparing tensile strained Ge on Ge1-ySny buffered semiconductor substrates |
US8288754B2 (en) | 2008-03-11 | 2012-10-16 | Nxp B.V. | Quantum-dot device and position-controlled quantum-dot-fabrication method |
WO2009123926A1 (en) * | 2008-04-02 | 2009-10-08 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Actg For & On Behalf ... | Selective deposition of sige layers from single source of si-ge hydrides |
KR102326316B1 (en) | 2015-04-10 | 2021-11-16 | 삼성전자주식회사 | Semiconductor dievices and methods of manufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4777023A (en) * | 1986-02-18 | 1988-10-11 | Solarex Corporation | Preparation of silicon and germanium hydrides containing two different group 4A atoms |
US4910153A (en) * | 1986-02-18 | 1990-03-20 | Solarex Corporation | Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4777023A (en) * | 1986-02-18 | 1988-10-11 | Solarex Corporation | Preparation of silicon and germanium hydrides containing two different group 4A atoms |
US4910153A (en) * | 1986-02-18 | 1990-03-20 | Solarex Corporation | Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
Non-Patent Citations (5)
Title |
---|
BAUER MATTHEW ET AL: "Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1-x buffer layers", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 83, no. 11, 15 September 2003 (2003-09-15), pages 2163-2165, XP012035089, ISSN: 0003-6951 * |
CHANGWU HU ET AL: "Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of h3SiGeH3 and Ge(SiH3)4", CHEMISTRY OF MATERIALS, AMERICAN CHEMICAL SOCIETY, WASHINGTON, US, vol. 15, no. 19, 23 September 2003 (2003-09-23), pages 3569-3572, XP001521469, ISSN: 0897-4756, DOI: DOI:10.1021/CM034477W * |
GAIDUK P I ET AL: "Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 367, no. 1-2, 1 May 2000 (2000-05-01) , pages 120-125, XP004203895, ISSN: 0040-6090, DOI: DOI:10.1016/S0040-6090(00)00660-X * |
See also references of WO2006031257A2 * |
WOLF S ED - WOLF S ET AL: "CHAPTER 6: Chemical Vapor Deposition of Amorphous and Polycrystalline thin Films", 1 January 1986 (1986-01-01), SILICON PROCESSING FOR THE VLSI ERA. VOLUME 1: PROCESS TECHNOLOGY, LATTICE PRESS, SUNSET BEACH, CALIFORNIA, USA, PAGE(S) 161 - 197, XP009134833, ISBN: 978-0-9616721-3-3 * pages 163-164, chapter 'Basic Aspects of Chemical Vapor Deposition' * * |
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