EP1676282A2 - Utilisation de polymeres conducteurs ou semi-conducteurs dans des capteurs chimiques pour la detection de composes nitres - Google Patents
Utilisation de polymeres conducteurs ou semi-conducteurs dans des capteurs chimiques pour la detection de composes nitresInfo
- Publication number
- EP1676282A2 EP1676282A2 EP04805234A EP04805234A EP1676282A2 EP 1676282 A2 EP1676282 A2 EP 1676282A2 EP 04805234 A EP04805234 A EP 04805234A EP 04805234 A EP04805234 A EP 04805234A EP 1676282 A2 EP1676282 A2 EP 1676282A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- use according
- polymer
- sensor
- conductive
- sensors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 150000002828 nitro derivatives Chemical class 0.000 title claims abstract description 22
- 229920001940 conductive polymer Polymers 0.000 title claims abstract description 9
- 239000000126 substance Substances 0.000 title claims description 13
- 239000000463 material Substances 0.000 claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- -1 nitramines Chemical class 0.000 claims abstract description 11
- 150000002148 esters Chemical class 0.000 claims abstract description 5
- 150000004005 nitrosamines Chemical class 0.000 claims abstract description 5
- 229920000642 polymer Polymers 0.000 claims description 46
- 239000010409 thin film Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 25
- 229920000767 polyaniline Polymers 0.000 claims description 23
- RFKWIEFTBMACPZ-UHFFFAOYSA-N 3-dodecylthiophene Chemical compound CCCCCCCCCCCCC=1C=CSC=1 RFKWIEFTBMACPZ-UHFFFAOYSA-N 0.000 claims description 17
- 230000006870 function Effects 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 14
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 125000005842 heteroatom Chemical group 0.000 claims description 9
- 125000003118 aryl group Chemical group 0.000 claims description 8
- 239000002360 explosive Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- DYSXLQBUUOPLBB-UHFFFAOYSA-N 2,3-dinitrotoluene Chemical compound CC1=CC=CC([N+]([O-])=O)=C1[N+]([O-])=O DYSXLQBUUOPLBB-UHFFFAOYSA-N 0.000 claims description 6
- 125000001072 heteroaryl group Chemical group 0.000 claims description 6
- 239000000178 monomer Substances 0.000 claims description 6
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 claims description 6
- 229920002848 poly(3-alkoxythiophenes) Polymers 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- SPSSULHKWOKEEL-UHFFFAOYSA-N 2,4,6-trinitrotoluene Chemical compound CC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O SPSSULHKWOKEEL-UHFFFAOYSA-N 0.000 claims description 5
- WDCYWAQPCXBPJA-UHFFFAOYSA-N 1,3-dinitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC([N+]([O-])=O)=C1 WDCYWAQPCXBPJA-UHFFFAOYSA-N 0.000 claims description 4
- AGUIVNYEYSCPNI-UHFFFAOYSA-N N-methyl-N-picrylnitramine Chemical compound [O-][N+](=O)N(C)C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O AGUIVNYEYSCPNI-UHFFFAOYSA-N 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 125000004122 cyclic group Chemical group 0.000 claims description 4
- 238000006116 polymerization reaction Methods 0.000 claims description 4
- 229920006395 saturated elastomer Polymers 0.000 claims description 4
- 239000000015 trinitrotoluene Substances 0.000 claims description 4
- KSXPBXSSFXYIEV-UHFFFAOYSA-N 1,2-dinitro-3-(trifluoromethoxy)benzene Chemical compound [O-][N+](=O)C1=CC=CC(OC(F)(F)F)=C1[N+]([O-])=O KSXPBXSSFXYIEV-UHFFFAOYSA-N 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 claims description 3
- 238000009987 spinning Methods 0.000 claims description 3
- 229950002929 trinitrophenol Drugs 0.000 claims description 3
- YEAOVYLCHBNHNT-UHFFFAOYSA-N 1,2-dinitro-3-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC=CC(C(F)(F)F)=C1[N+]([O-])=O YEAOVYLCHBNHNT-UHFFFAOYSA-N 0.000 claims description 2
- YSIBQULRFXITSW-OWOJBTEDSA-N 1,3,5-trinitro-2-[(e)-2-(2,4,6-trinitrophenyl)ethenyl]benzene Chemical compound [O-][N+](=O)C1=CC([N+](=O)[O-])=CC([N+]([O-])=O)=C1\C=C\C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O YSIBQULRFXITSW-OWOJBTEDSA-N 0.000 claims description 2
- IRMMUPDPGLTRFK-UHFFFAOYSA-N 1-chloro-2,3-dinitro-4-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=C(Cl)C=CC(C(F)(F)F)=C1[N+]([O-])=O IRMMUPDPGLTRFK-UHFFFAOYSA-N 0.000 claims description 2
- XPZIHYPNPPPMMM-UHFFFAOYSA-N 4-methyl-2,3-dinitroaniline Chemical compound CC1=CC=C(N)C([N+]([O-])=O)=C1[N+]([O-])=O XPZIHYPNPPPMMM-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 238000001074 Langmuir--Blodgett assembly Methods 0.000 claims description 2
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 2
- UATJOMSPNYCXIX-UHFFFAOYSA-N Trinitrobenzene Chemical compound [O-][N+](=O)C1=CC([N+]([O-])=O)=CC([N+]([O-])=O)=C1 UATJOMSPNYCXIX-UHFFFAOYSA-N 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- VLZLOWPYUQHHCG-UHFFFAOYSA-N nitromethylbenzene Chemical compound [O-][N+](=O)CC1=CC=CC=C1 VLZLOWPYUQHHCG-UHFFFAOYSA-N 0.000 claims description 2
- 229920001197 polyacetylene Polymers 0.000 claims description 2
- 229920000128 polypyrrole Polymers 0.000 claims description 2
- 229920000123 polythiophene Polymers 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- LOTKRQAVGJMPNV-UHFFFAOYSA-N 1-fluoro-2,4-dinitrobenzene Chemical compound [O-][N+](=O)C1=CC=C(F)C([N+]([O-])=O)=C1 LOTKRQAVGJMPNV-UHFFFAOYSA-N 0.000 claims 1
- 150000002390 heteroarenes Chemical class 0.000 claims 1
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 abstract description 4
- 238000003915 air pollution Methods 0.000 abstract 1
- 239000012080 ambient air Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 8
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 150000002430 hydrocarbons Chemical group 0.000 description 6
- 230000000704 physical effect Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 241000282472 Canis lupus familiaris Species 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 229920000280 Poly(3-octylthiophene) Polymers 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000001548 drop coating Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000006068 polycondensation reaction Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- XTFIVUDBNACUBN-UHFFFAOYSA-N 1,3,5-trinitro-1,3,5-triazinane Chemical compound [O-][N+](=O)N1CN([N+]([O-])=O)CN([N+]([O-])=O)C1 XTFIVUDBNACUBN-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229920000547 conjugated polymer Polymers 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 229940100630 metacresol Drugs 0.000 description 2
- UMFJAHHVKNCGLG-UHFFFAOYSA-N n-Nitrosodimethylamine Chemical compound CN(C)N=O UMFJAHHVKNCGLG-UHFFFAOYSA-N 0.000 description 2
- UZGLIIJVICEWHF-UHFFFAOYSA-N octogen Chemical compound [O-][N+](=O)N1CN([N+]([O-])=O)CN([N+]([O-])=O)CN([N+]([O-])=O)C1 UZGLIIJVICEWHF-UHFFFAOYSA-N 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229930192474 thiophene Natural products 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
- IDCPFAYURAQKDZ-UHFFFAOYSA-N 1-nitroguanidine Chemical compound NC(=N)N[N+]([O-])=O IDCPFAYURAQKDZ-UHFFFAOYSA-N 0.000 description 1
- KPOCSQCZXMATFR-UHFFFAOYSA-N 3-butylthiophene Chemical compound CCCCC=1C=CSC=1 KPOCSQCZXMATFR-UHFFFAOYSA-N 0.000 description 1
- JAYBIBLZTQMCAY-UHFFFAOYSA-N 3-decylthiophene Chemical compound CCCCCCCCCCC=1C=CSC=1 JAYBIBLZTQMCAY-UHFFFAOYSA-N 0.000 description 1
- MSOTUIWEAQEETA-UHFFFAOYSA-N 4-octylbenzenesulfonic acid Chemical compound CCCCCCCCC1=CC=C(S(O)(=O)=O)C=C1 MSOTUIWEAQEETA-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- MMNWSHJJPDXKCH-UHFFFAOYSA-N 9,10-dioxoanthracene-2-sulfonic acid Chemical compound C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 MMNWSHJJPDXKCH-UHFFFAOYSA-N 0.000 description 1
- ONMOULMPIIOVTQ-UHFFFAOYSA-N 98-47-5 Chemical compound OS(=O)(=O)C1=CC=CC([N+]([O-])=O)=C1 ONMOULMPIIOVTQ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000723346 Cinnamomum camphora Species 0.000 description 1
- 229920000858 Cyclodextrin Polymers 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000000028 HMX Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 235000019687 Lamb Nutrition 0.000 description 1
- SNIOPGDIGTZGOP-UHFFFAOYSA-N Nitroglycerin Chemical compound [O-][N+](=O)OCC(O[N+]([O-])=O)CO[N+]([O-])=O SNIOPGDIGTZGOP-UHFFFAOYSA-N 0.000 description 1
- 239000000006 Nitroglycerin Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- TZRXHJWUDPFEEY-UHFFFAOYSA-N Pentaerythritol Tetranitrate Chemical compound [O-][N+](=O)OCC(CO[N+]([O-])=O)(CO[N+]([O-])=O)CO[N+]([O-])=O TZRXHJWUDPFEEY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- BLLMMMHXIMRJEC-UHFFFAOYSA-N butan-1-amine;perchloric acid Chemical compound CCCC[NH3+].[O-]Cl(=O)(=O)=O BLLMMMHXIMRJEC-UHFFFAOYSA-N 0.000 description 1
- 229960000846 camphor Drugs 0.000 description 1
- 229930008380 camphor Natural products 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229940097362 cyclodextrins Drugs 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- LYAGTVMJGHTIDH-UHFFFAOYSA-N diethylene glycol dinitrate Chemical compound [O-][N+](=O)OCCOCCO[N+]([O-])=O LYAGTVMJGHTIDH-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 229920000775 emeraldine polymer Polymers 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002255 enzymatic effect Effects 0.000 description 1
- DQYBDCGIPTYXML-UHFFFAOYSA-N ethoxyethane;hydrate Chemical compound O.CCOCC DQYBDCGIPTYXML-UHFFFAOYSA-N 0.000 description 1
- UQXKXGWGFRWILX-UHFFFAOYSA-N ethylene glycol dinitrate Chemical compound O=N(=O)OCCON(=O)=O UQXKXGWGFRWILX-UHFFFAOYSA-N 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 229920001109 fluorescent polymer Polymers 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 229960003711 glyceryl trinitrate Drugs 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- MHCFAGZWMAWTNR-UHFFFAOYSA-M lithium perchlorate Chemical compound [Li+].[O-]Cl(=O)(=O)=O MHCFAGZWMAWTNR-UHFFFAOYSA-M 0.000 description 1
- 229910001486 lithium perchlorate Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 description 1
- 229940067157 phenylhydrazine Drugs 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005588 protonation Effects 0.000 description 1
- 125000004309 pyranyl group Chemical group O1C(C=CC=C1)* 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 239000004108 vegetable carbon Substances 0.000 description 1
- 235000012712 vegetable carbon Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/126—Composition of the body, e.g. the composition of its sensitive layer comprising organic polymers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0031—General constructional details of gas analysers, e.g. portable test equipment concerning the detector comprising two or more sensors, e.g. a sensor array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
- H01B1/127—Intrinsically conductive polymers comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/17—Nitrogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/17—Nitrogen containing
- Y10T436/170769—N-Nitroso containing [e.g., nitrosamine, etc.]
Definitions
- the present invention relates to the use of electrically conductive or semiconductor polymers as sensitive materials of resistive and gravimetric sensors intended to detect nitro compounds, and in particular nitroaromatic compounds such as nitrobenzene, dinitrobenzene (DNB), dinitrotoluene (DNT), 2, 4, 6-trinitrotoluene (TNT) and the like.
- nitroaromatic compounds such as nitrobenzene, dinitrobenzene (DNB), dinitrotoluene (DNT), 2, 4, 6-trinitrotoluene (TNT) and the like.
- Such sensors are useful for the detection of explosives, whether to ensure the security of public places such as airports, to control the legality of goods in circulation in a territory, to fight against terrorism, to carry out disarmament operations, locate anti-personnel mines or clean up industrial or military sites. They are also useful for protecting the environment, in particular for controlling and monitoring atmospheric pollution and the quality of more or less confined atmospheres, as well as for monitoring for security purposes, industrial
- the size of the devices they use, their energy consumption and their implementation costs preclude the development of easily transportable and autonomous detection systems and, therefore, suitable for use on any type of sites.
- the development of sensors capable of detecting species in real time gaseous chemicals is booming.
- the operation of these sensors is based on the use of a film of a sensitive material, that is to say of a material of which at least one physical property is modified in contact with the desired gas molecules, which has a system able to measure in real time any variation of this physical property and thus highlight the presence of the desired gas molecules.
- the subject of the invention is the use of at least one electrically conductive or semi-conductive polymer as a sensitive material in a resistive or gravimetric sensor intended to detect one or more nitro compounds chosen from the group consisting of nitroaromatic compounds, nitramines, nitrosamines and nitric esters.
- nitroaromatic compounds chosen from the group consisting of nitroaromatic compounds, nitramines, nitrosamines and nitric esters.
- polymer "conductor” of electricity a polymer whose electrical conductivity is at least equal to 10 2 siemens / cm at room temperature
- polymer "semi -conductive "of electricity a polymer whose electrical conductivity is between about 10 " 10 and 10 2 siemens / cm at room temperature.
- the conductive or semiconductor polymer is preferably a conjugated polymer which is chosen from the polymers corresponding to formulas (I), (II), (III), (IV) and (V) below:
- n is an integer ranging from 5 to 100,000 while Ri, R 2 , R 3 and R 4 represent, independently of each other: a hydrogen or halogen atom, a methyl group, - a chain linear, branched or cyclic, saturated or unsaturated, comprising from 2 to 100 carbon atoms and optionally one or more several heteroatoms and / or one or more chemical functions comprising at least one heteroatom, and / or one or more aromatic or heteroaromatic groups substituted or not, a chemical function comprising at least one heteroatom, or alternatively - an aromatic or heteroaromatic group substituted or not .
- R 1f R 2 , R 3 and / or R 4 represent a C 1 to C 10 hydrocarbon chain and this comprises one or more hetero atoms and / or one or more chemical functions and / or one or more aromatic or hetero-aromatic groups, then these atoms, these functions and these groups can as well form a bridge inside this chain as they can be carried laterally by it or even be located at its end.
- the heteroatom (s) may be any atom other than a carbon or hydrogen atom such as, for example, an oxygen, sulfur, nitrogen, fluorine, chlorine, phosphorus, boron atom or else of silicon.
- the chemical function (s) can in particular be chosen from the functions -COOH, -COOR 5 , -CHO, -CO -, - OH, -OR 5 , -SH, -SR 5 , -S0 2 R 5 , -NH 2 , -NHR 5 , -NR 5 R 6 , -C0NH 2 , -CONHR5, -C0NR 5 R 6 , -C (X) 3 , -OC (X) 3 , -COX, -CN, -C00CH0 and -C00C0R 5 in which: R 5 represents a hydrocarbon group, linear, branched or cyclic, saturated or unsaturated, comprising 1 to 100 carbon atoms, or a covalent bond in the case where said chemical function or functions form a bridge in a C 2 to C 10 hydrocarbon chain .
- R 6 represents a hydrocarbon group, linear, branched or cyclic, saturated or unsaturated comprising from 1 to 100 carbon atoms, this group being able to be identical or different from the hydrocarbon group represented by R 5 , while • X represents an atom of halogen, for example a fluorine, chlorine or bromine atom.
- the aromatic group or groups may be any hydrocarbon group comprising one or more unsaturated C 3 to C 6 rings and comprising conjugated double bonds such as, for example, a cyclopentadienyl, phenyl, benzyl, biphenyl, phenylacetylenyl, pyrene or anthracene group, while that the heteroaromatic group or groups can be any aromatic group as just defined, but comprising, in at least one of the rings which constitute it, one or more heteroatoms such as, for example, a furanyl, pyrrolyl group , thiophenyl, oxazolyle, pyrazolyle, thiazolyle, imidazolyle, triazolyle, pyridinyle, pyranyl, quinolineyl, pyrazinyle or pyrimidinyle.
- poly (3 -alkylthiophenes) useful according to the invention include poly (3-butylthiophene), poly (3-hexylthiophene), poly (3-octylthiophene), poly (3-decylthiophene) or also poly (3-dodecylt iophene).
- These polymers can be obtained either from companies which market them - which is, for example, the case for a certain number of poly (3-alkylthiophenes) which are available from the company Sigma-Aldrich - or by oxidative polymerization, enzymatic, electrochemical or other, of the corresponding monomers.
- Polyanilines can also be obtained by protonation of emeraldine base, for example by means of an acid as widely described in the literature. Furthermore, whatever the intrinsic conductivity of these polymers, that is to say the conductivity which they exhibit outside of any particular treatment, it is possible to subject them to doping and / or dedoping reactions. so as to adjust this conductivity to a value predetermined according to the type of sensor in which they are intended to serve as sensitive material and nitro compounds to be detected.
- These doping reactions can be carried out using, for example, an acid such as hydrochloric acid, camphor sulfonic acid, p-toluenesulfonic acid or 3-nitrobenzenesulfonic acid; a salt such as iron chloride, nitrosyl trifluoroborate, the sodium salt of anthraquinone-2-sulfonic acid, the sodium salt of 4-octylbenzenesulfonic acid, lithium perchlorate or tetra perchlorate -n-butylammonium; a halogen such as iodine or bromine; an alkali metal such as sodium, potassium or rubidium; and, more generally, by means of any acid or oxidizing agent.
- an acid such as hydrochloric acid, camphor sulfonic acid, p-toluenesulfonic acid or 3-nitrobenzenesulfonic acid
- a salt such as iron chloride, nitrosyl trifluoroborate,
- dedoping reactions can be carried out using any base or reducing agent such as ammonia or phenylhydrazine.
- the conductivity of a weakly conductive polymer can also be adjusted by adding a polymer with higher conductivity.
- the conductive or semi-conductive polymer can also be a polymer which is synthesized in a doped form, that is to say which is obtained by polymerization of monomers previously bonded chemically to a doping agent such as, for example.
- aniline monomers each coupled to a sulfonic camphor acid molecule or thiophene monomers each coupled to a molecule of a polysulfonate of the polystyrene sulfonate or polyacrylate sulfonate type.
- the conductive or semiconductor polymer is advantageously in the form of a thin film which covers one or both sides of a substrate suitably chosen according to the physical property of the sensitive material whose variations are intended to be measured by this sensor.
- the conductive or semi-conductive polymer can also be in a massive form such as, for example, a cylinder having a certain porosity so as to make all the molecules of the polymer accessible to the nitrated compounds.
- a thin film When it is in the form of a thin film, the latter preferably has a thickness of 10 angstroms to 100 microns.
- Such a film can be obtained by any of the techniques proposed to date for producing a thin film on the surface of a substrate, for example: by spraying, by spin coating ("spin coating" in English).
- thin films of poly (3-alkylthiophenes) produced by spinning deposition have been found to have an electrical conductivity very much higher than that of films of similar thickness but obtained by spraying. We therefore favor a deposition technique rather than another depending on the level of conductivity that we want to give the thin film.
- the substrate and the sensor measurement system are chosen according to the physical property of the sensitive material, the variations induced by the presence of nitro compounds are intended to be measured by the sensor. In the present case, the variations of two physical properties have proved to be particularly interesting to measure. These are, on the one hand, variations in electrical conductivity, and, on the other hand, variations in mass.
- the sensor is a resistive sensor or a gravimetric sensor.
- quartz microbalance sensors By way of examples of gravimetric sensors, mention may be made of quartz microbalance sensors, surface wave sensors, better known under the English terminology “SA” for "Surface Acoustic Wave”, such as wave sensors. from Love and the Lamb wave sensors, as well as the microlevers.
- quartz microbalance sensors are more particularly preferred.
- This type of sensor schematically comprises a piezoelectric substrate (or resonator), generally a quartz crystal covered on its two faces with a metallic layer, for example d gold or platinum, and which is connected to two electrodes. Since the sensitive material covers one or both sides of the substrate, any variation in mass of this material results in a variation in the vibration frequency of the substrate.
- the invention it is possible to combine, within the same device or "multisensor", several resistive and / or gravimetric sensors comprising sensitive materials different from each other, or provided with substrates and measurement systems different from each other, the main thing being that at least one of these sensors comprises a conductive or semiconductor polymer. It is also possible to integrate one or more sensors into such a multisensor additional comprising a conductive or semiconductor or semiconductor polymer as defined above as a sensitive material, but designed to measure variations of a physical property other than electrical conductivity and mass such as, for example, variations of an optical property , especially fluorescence.
- nitro compound or compounds intended to be detected by the sensor are chosen from nitroaromatic compounds, nitramines, nitrosamines and nitric esters, these compounds being able to be present in solid, liquid or gaseous form (vapors) .
- nitroaromatic compounds include nitrobenzene, dinitrobenzene, trinitrobenzene, nitrotoluene, dinitrotoluene, trinitrotoluene, benzene dinitrofluoro- the dinitrotrifluorométhoxybenzène, the amino dinitrotoluene, dinitrotrifluoromethylbenzene the chlorodinitrotrifluorométhylbenzène, 1 hexanitrostilbene, trinitrophenylmethylnitramine (or tetryl) or trinitrophenol (or picric acid).
- nitramines are, for example, cyclotetramethylenetetranitramine (or octogen), cyclotrimethylenetrinitramine (or hexogen) and tetryl, while the nitrosamines are, for example, nitrosodimethylamine.
- nitric esters these are, for example, pentrite, ethylene glycol dinitrate, diethylene glycol dinitrate, nitroglycerin or nitroguanidine.
- Resistive and gravimetric sensors comprising a conductive or semiconductor polymer as sensitive material, in accordance with the invention have been found to have many advantages, in particular: - an ability to detect nitro compounds with very high sensitivity since they are capable to detect their presence at concentrations of the order of ppm, or even lower, - an ability to selectively detect nitro compounds compared to other organic compounds, and in particular to other aromatic compounds such as toluene, - rapidity response and reproducibility of this response, - an ability to operate continuously, - a very satisfactory lifetime, the conductive and semiconductor polymers showing good resistance to aging, - a manufacturing cost compatible with a production of sensors in series, a very small amount of polymer (i.e.
- DNT dinitrotoluene
- TNT trinitrotoluene
- Figure 1 shows the evolution of the electric intensity (curve A) measured across a resistive sensor comprising a thin film of undoped polyaniline during an exposure cycle (curve B) of this sensor has DNTFMB vapors at a concentration of 3 ppm.
- Figure 2 shows the evolution of the electric intensity (curve A) measured across a resistive sensor comprising a thin film of polyaniline doped with camphor sulfonic acid, then partially dedoped by ammonia vapors, at during 3 cycles of exposure (curve B) of this sensor to DNTFMB vapors at a concentration of 3 ppm.
- FIG. 3 shows the evolution of the electrical intensity (curve A) measured across a resistive sensor comprising a thin film of poly (3-dodecylthiophene) during 3 exposure cycles (curve B) of this sensor DNTFMB vapors at a concentration of 3 ppm.
- FIG. 4 shows the evolution of the vibration frequency (curve A) of the quartz of a quartz microbalance sensor comprising a thin film of poly (3-dodecylthiophene) during 2 exposure cycles (curve B) of this sensor has DNTFMB vapors at a concentration of 3 ppm.
- FIG. 5 shows the evolution of the electric intensity measured at the terminals of a resistive sensor comprising a film of poly (3-dodecylthiophene) during 2 cycles of exposure of this sensor to DNTFMB vapors, followed by 4 cycles of exposure to vapors of dichloromethane, methyl ethyl ketone, toluene and ethanol respectively.
- Example 1 detection of DNTFMB by a resistive sensor comprising a thin film of partially doped polyaniline
- a resistive sensor comprising a thin film of partially doped polyaniline
- a resistive sensor comprising an insulating alumina substrate provided, on its upper face, with two measurement electrodes constituted by interdigitated combs platinum, the width of the tracks being 150 ⁇ m, and, on its underside, a heating electrode consisting of platinum.
- the face of the substrate carrying the measurement electrodes is covered with a thin film of partially doped polyaniline.
- polyaniline doped by polycondensation of aniline in an oxidizing medium is first prepared.
- This polycondensation is carried out by slowly pouring a solution of (NH 4 ) 2 S 2 0 8 in 1.5 M HCl at 100 g / 1 in a stirred reactor containing a solution of aniline in 1.5 M HCl at 100 g / 1 and leaving to react for 3 days at -40 ° C.
- the aniline / oxidant molar ratio is 1.
- the mixture is filtered and the polyaniline powder thus recovered is washed successively with water, methanol and ethyl ether.
- the polyaniline thus obtained is subjected to a partial dedoping with ammonia, leaving approximately 30 minutes and with stirring a suspension of polyaniline in methanol and a solution with 1 mol / 1 of ammonia.
- the mixture is again filtered and the polyaniline powder washed. It is then dissolved in N-methylpyrrolidinone at a concentration of 20 g / l.
- the polyaniline film is formed on the upper face of the alumina substrate by "drop -coating", that is to say by depositing on this substrate 3 times two drops of polyaniline solution and evaporating the N-methylpyrrolidinone after each deposit, by heating to 80 ° C.
- a partially doped polyaniline film having an electrical intensity of 44 microamperes ( ⁇ A) when a voltage of 1 volt is applied to it.
- a voltage of 1 volt being applied to the terminals of the sensor, the latter is subjected to a cycle of exposure to DNTFMB in the form of vapors, at room temperature, this cycle comprising a phase of exposure of 600 seconds to ambient air , followed by a 300-second exposure phase to DNTFMB at a concentration of 3 ppm, and again by a 900-second exposure phase to ambient air.
- Figure 1 shows the evolution of
- Example 2 detection of DNTFMB by a resistive sensor comprising a thin film of partially doped polyaniline
- a resistive sensor identical to that used in Example 1 is used, except that the thin film of partially doped polyaniline which covers the upper face of the substrate has an electrical intensity of 2.6 milliamps (mA) when a voltage of 1 volt is applied to it.
- the upper face of the substrate is, firstly, covered with a polyaniline film obtained by polycondensation of aniline in an oxidizing medium as described in Example 1, then doped with camphor sulfonic acid, then the assembly is subjected to ammonia vapors for 5 minutes to partially dedope the polyaniline.
- the doping of polyaniline with camphor sulfonic acid is carried out by mixing the latter with camphor sulfonic acid in a 2/1 molar ratio, then by dissolving this mixture in meta-cresol so as to obtain a solution at 0 , 3% by mass.
- the doped polyaniline film is formed on the upper face of the substrate by "drop -coating" (3 times 2 drops) from a solution containing 1.3 g / 1 of this polyaniline per liter of meta-cresol.
- the ammonia is generated by heating a 28% solution.
- a voltage of 1 volt being applied to the terminals of the sensor is subjected to three cycles of exposure to DNTFMB in the form of vapors, at room temperature: the first cycle comprising a phase of exposure of 2000 seconds to air ambient, followed by a 600-second exposure phase to the DNTFMB, and an exposure phase of 3900 seconds to ambient air, the second cycle comprising an exposure phase of 600 seconds to DNTFMB, followed by an exposure phase of 2300 seconds to ambient air, the third cycle comprising a phase of exposure of 600 seconds to DNTFMB, followed by a phase of exposure of 1500 seconds to ambient air, the concentration of DNTFMB being 3 ppm in all cases.
- Example 3 detection of DNTFMB by a resistive sensor comprising a thin film of poly (3-dodecylthiophene)
- a resistive sensor identical to that used in example 1 is used, except that the upper face of the substrate is covered with a thin film of poly (3-dodecylthiophene) having an electrical intensity of 7.4. nanoamps
- the poly (3-docedylthiophene) comes from the company SIGMA-ALDRICH (reference 450650). It has a molecular weight of 162,000 g / mole.
- the poly (3-dodecylthiophene) film is formed on the upper face of the substrate by "drop-coating" (3 times 2 drops) from a solution containing 10 g / 1 of this polymer per liter of chloroform, the latter being evaporated after each deposition by heating to 45 ° C.
- Example 4 detection of DNTFMB by a quartz microbalance sensor comprising a thin film of poly (3-dodecylthiophene)
- a quartz microbalance sensor comprising an AT cut quartz with a vibration frequency of 9 MHz covered two circular gold measuring electrodes (model QA9RA-50, AMETEK PRECISION INSTRUMENTS). The two sides of the device are covered with a thin film of poly (3-dodecylthiophene) about 0.5 ⁇ m thick.
- the poly (3-dodecylthiophene) comes from the company SIGMA-ALDRICH (reference 450650).
- the deposition of the poly (3-dodecylthiophene) film is carried out by carrying out on each face of the device nine sprays of 0.4 seconds of a solution of this polymer in chloroform of concentration equal to 5 g / 1.
- the variation in the vibration frequency of quartz due to this deposit is 10.3 kHz.
- the sensor is subjected to two cycles of exposure to DNTFMB in the form of vapors, at room temperature: - the first cycle comprising an exposure phase of 750 seconds to ambient air, followed by an exposure phase of 600 seconds to DNTFMB, and an exposure phase of 1400 seconds to ambient air, - the second cycle comprising an exposure phase of 600 seconds to DNTFMB, followed an exposure phase of 600 seconds to ambient air, the concentration of DNTFMB being 3 ppm in both cases.
- a resistive sensor identical to that used in Example 1 is used, except that the upper face of the substrate is covered with a film of poly (3-dodecylthiophene) deposited by spraying.
- poly (3-dodecylthiophene) SIGMA-ALDRICH, reference 450650
- nine sprays of 0.4 seconds of this solution are carried out on the upper face of the substrate in order to obtain a thin film having an electrical intensity of 29 nA when a voltage of 1 volt is applied to it.
- a DC voltage of 1 volt being applied to the terminals of the sensor is subjected to six cycles of exposure to organic compounds in the form of vapors comprising: - for the first, an exposure phase of 1700 seconds to ambient air, followed by an exposure phase of 600 seconds to DNTFMB at a concentration of 3 ppm, and an exposure phase of 5800 seconds to ambient air, - for the second, an exposure phase of 600 seconds to DNTFMB at a concentration of 3 ppm, followed by an exposure phase of 5400 seconds to ambient air, - for the third, an exposure phase of 600 seconds to dichloromethane at a concentration of 580,000 ppm, followed by an exposure phase of 520 seconds to ambient air, - for the fourth, an exposure phase of 600 seconds to methyl ethyl ketone at a concentration of 126,000 ppm, followed by an exposure phase of 520 seconds to ambient air, - for the fifth, an exposure phase of 600 seconds to toluene at a concentration of 38,000 ppm, followed by a
- FIG. 5 shows the evolution of the electric intensity (I), expressed in nA, as measured at the terminals of the sensor as a function of time (t), expressed in seconds, the arrow fl signaling the start of the 1st cycle, arrow f2 the start of the 2nd cycle, arrow f3 the beginning of the 3 rd cycle and the arrow f4 the end of the 6 th cycle.
- Example 6 influence on the level of electrical conductivity of a resistive sensor comprising a thin film of poly (3-octylthiophene) or poly (3-dodecylthiophene) of the technique used to produce this film.
- a resistive sensor comprising a thin film of poly (3-octylthiophene) or poly (3-dodecylthiophene) of the technique used to produce this film.
- four resistive sensors identical to that used in Example 1 are used, except that the upper face of the substrate of these sensors is covered with a thin film, either of poly (3-dodecylthiophene), or of poly (3-octylthiophene), this film being produced either by spraying or by spinning.
- Poly (3-dodecylthiophene) and poly (3-octylthiophene) both come from society
- Table 1 presents the electrical intensities in nA as measured at the terminals of each of the sensors when a voltage of 1 volt is applied to them.
- Examples 1 to 4 above show that resistive or gravimetric sensors, comprising a conductive or semiconductor polymer, make it possible to detect with very great sensitivity nitro compounds such as DNTFMB. They also show that the response of these sensors is reversible, this reversibility however appearing to be the fastest with a quartz microbalance sensor.
- Example 5 shows that these sensors, by not reacting to the presence of other organic compounds such as dicoromethane, methyl ethyl ketone, toluene and ethanol, make it possible moreover to selectively detect the nitro compounds.
- Example 6 shows that, in the case where the conductive or semiconductor polymer is used in the form of a thin film, the electrical conductivity of this film is likely to vary in significant proportions depending on the technique used for realize it.
- the invention offers the possibility of adjusting the electrical conductivity of a thin film intended to serve as sensitive material in a resistive sensor by on the one hand, the choice of the polymer forming this film, on the other hand, the use doping and / or dedoping reactions and, finally, by the technique of depositing this film.
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Pathology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electrochemistry (AREA)
- Combustion & Propulsion (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0350709A FR2861175B1 (fr) | 2003-10-20 | 2003-10-20 | Utilisation de polymeres conducteurs ou semi-conducteurs dans des capteurs chimiques pour la detection de composes nitres. |
| PCT/FR2004/002670 WO2005041212A2 (fr) | 2003-10-20 | 2004-10-19 | Utilisation de polymeres conducteurs ou semi-conducteurs dans des capteurs chimiques pour la detection de composes nitres |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1676282A2 true EP1676282A2 (fr) | 2006-07-05 |
Family
ID=34385414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP04805234A Withdrawn EP1676282A2 (fr) | 2003-10-20 | 2004-10-19 | Utilisation de polymeres conducteurs ou semi-conducteurs dans des capteurs chimiques pour la detection de composes nitres |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20070269900A1 (fr) |
| EP (1) | EP1676282A2 (fr) |
| JP (1) | JP2007511748A (fr) |
| CA (1) | CA2518630A1 (fr) |
| FR (1) | FR2861175B1 (fr) |
| WO (1) | WO2005041212A2 (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0600249D0 (en) | 2006-01-06 | 2006-02-15 | Isis Innovation | Branched compounds and their use in sensors |
| CN102654460B (zh) * | 2011-03-02 | 2014-07-30 | 中国科学院合肥物质科学研究院 | 聚吡咯、异硫氰酸荧光素与多孔氧化铝组成的复合传感膜及其制备方法和用途 |
| MY176885A (en) * | 2012-01-16 | 2020-08-25 | Mimos Berhad | A sensor for dissolved ammonia and a process of preparation thereof |
| US9546247B2 (en) * | 2012-03-21 | 2017-01-17 | University Of Connecticut | Explosive detection polymer comprising functionalized polyamine polymers and methods of using the same |
| US9265458B2 (en) | 2012-12-04 | 2016-02-23 | Sync-Think, Inc. | Application of smooth pursuit cognitive testing paradigms to clinical drug development |
| US9380976B2 (en) | 2013-03-11 | 2016-07-05 | Sync-Think, Inc. | Optical neuroinformatics |
| US12345680B1 (en) | 2014-03-13 | 2025-07-01 | Innosense Corporation | Modular chemiresistive sensor for real-time ethylene monitoring |
| US9896772B2 (en) | 2014-03-13 | 2018-02-20 | Innosense Llc | Modular chemiresistive sensor |
| KR102215931B1 (ko) * | 2018-09-05 | 2021-02-15 | 코람데오테크 주식회사 | 니트로기에 대한 민감도 및 광학적 분석용 센서 제조 방법 |
| CN110455757B (zh) * | 2019-08-05 | 2022-02-22 | 广州大学 | 一种对硝基甲苯的荧光比率检测方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69915466T2 (de) * | 1998-05-05 | 2005-01-20 | Massachusetts Institute Of Technology, Cambridge | Lichtemittierende polymere und vorrichtungen, die diese enthalten |
| AU782254B2 (en) * | 1999-05-05 | 2005-07-14 | Regents Of The University Of California, The | Method for detecting biological agents |
-
2003
- 2003-10-20 FR FR0350709A patent/FR2861175B1/fr not_active Expired - Lifetime
-
2004
- 2004-10-19 US US10/576,365 patent/US20070269900A1/en not_active Abandoned
- 2004-10-19 EP EP04805234A patent/EP1676282A2/fr not_active Withdrawn
- 2004-10-19 WO PCT/FR2004/002670 patent/WO2005041212A2/fr not_active Ceased
- 2004-10-19 CA CA002518630A patent/CA2518630A1/fr not_active Abandoned
- 2004-10-19 JP JP2006534805A patent/JP2007511748A/ja not_active Withdrawn
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2005041212A3 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005041212A2 (fr) | 2005-05-06 |
| US20070269900A1 (en) | 2007-11-22 |
| WO2005041212A3 (fr) | 2005-07-07 |
| CA2518630A1 (fr) | 2005-05-06 |
| FR2861175A1 (fr) | 2005-04-22 |
| FR2861175B1 (fr) | 2005-12-23 |
| JP2007511748A (ja) | 2007-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2548252C (fr) | Utilisation de polymeres ou de composites a base de siloxanes dans des capteurs chimiques pour la detection de composes nitres | |
| Alizadeh et al. | Molecularly imprinted polymer nano-sphere/multi-walled carbon nanotube coated glassy carbon electrode as an ultra-sensitive voltammetric sensor for picomolar level determination of RDX | |
| Eslami et al. | Ultrasensitive and selective QCM sensor for detection of trace amounts of nitroexplosive vapors in ambient air based on polypyrrole—Bromophenol blue nanostructure | |
| Huynh et al. | Chemosensor for selective determination of 2, 4, 6-trinitrophenol using a custom designed imprinted polymer recognition unit cross-linked to a fluorophore transducer | |
| EP1676282A2 (fr) | Utilisation de polymeres conducteurs ou semi-conducteurs dans des capteurs chimiques pour la detection de composes nitres | |
| JP2007513347A5 (fr) | ||
| KR20060136378A (ko) | 니트로 화합물들을 검출하는 화학 센서들에서 실록산-계중합체들 또는 그 복합체들의 용도 | |
| Dudhe et al. | Polymer composite-based OFET sensor with improved sensitivity towards nitro based explosive vapors | |
| EP1733210B1 (fr) | Capteurs chimiques comprenant des polymères conjugués fluorescents comme matériaux sensibles, et leur utilisation pour la détection ou le dosage de composés nitrés | |
| EP1817363B1 (fr) | Capteurs chimiques comprenant des polysiloxanes anilines comme materiaux sensibles et leur utilisation pour la detection ou le dosage de composes nitres | |
| EP1731548B1 (fr) | Utilisation de polysiloxanes fluorescents dans des capteurs chimiques pour la detection ou le dosage de composes nitres | |
| GB2548540A (en) | New bis(2, 2'-bithienyl)methane derivative and method of producing thereof, molecularly imprinted polymer film, method of producing therof and its use | |
| CA2133912A1 (fr) | Materiau cathodique pour generateur electrochimique | |
| EP2611773A1 (fr) | Utilisation de sels de diazonium pour la formation de couches epaisses sur au moins une surface d'un substrat | |
| FR2929283A1 (fr) | Polycarbosilanes utiles comme materiaux sensibles pour la detection et le dosage de composes nitres et capteurs chimiques les comprenant | |
| US7901948B2 (en) | Use of molecular tweezers as sensitive materials in chemical sensors for detecting or assaying organic compounds in the vapour state | |
| FR2968081A1 (fr) | Films minces de silices mesoporeuses comme materiaux sensibles dans des capteurs chimiques pour la detection ou le dosage de vapeurs de composes nitres | |
| EP2717040B1 (fr) | Dispositif de détection et/ou de quantification du chlorure de thionyle, son procédé de fabrication et procédé de détection et/ou de quantification du chlorure de thionyle |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| 17P | Request for examination filed |
Effective date: 20050830 |
|
| AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR |
|
| RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: BUVAT, PIERRICK Inventor name: PASQUINET, ERIC Inventor name: HAIRAULT, LIONEL Inventor name: LEBRET, BRUNO |
|
| RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE |
|
| DAX | Request for extension of the european patent (deleted) | ||
| 17Q | First examination report despatched |
Effective date: 20090513 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
| 18D | Application deemed to be withdrawn |
Effective date: 20090924 |