EP1675148A1 - Verfahren zum Entwurf einer Mikroelektromechanischen Vorrichtung mit verringerter Selbstbetätigung - Google Patents

Verfahren zum Entwurf einer Mikroelektromechanischen Vorrichtung mit verringerter Selbstbetätigung Download PDF

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Publication number
EP1675148A1
EP1675148A1 EP05112976A EP05112976A EP1675148A1 EP 1675148 A1 EP1675148 A1 EP 1675148A1 EP 05112976 A EP05112976 A EP 05112976A EP 05112976 A EP05112976 A EP 05112976A EP 1675148 A1 EP1675148 A1 EP 1675148A1
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Prior art keywords
actuation
conductor
collapsible portion
principal
region
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EP05112976A
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English (en)
French (fr)
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EP1675148B1 (de
Inventor
Xavier Rottenberg
Hendrikus Tilmans
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Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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Priority claimed from EP05103893A external-priority patent/EP1722386A1/de
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Priority to EP20050112976 priority Critical patent/EP1675148B1/de
Publication of EP1675148A1 publication Critical patent/EP1675148A1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
    • H01P1/127—Strip line switches

Definitions

  • RF-MEMS switching devices have just like semiconductor RF switches (like PIN diodes or GaAs FET switches), two stable states. Switching between the two states is achieved through the mechanical displacement of a freely movable structural member (the armature). The displacement is induced via a micro-actuator for which various actuation mechanisms exist including, electrostatic, electrothermal, piezoelectric and electromagnetic means.
  • electrostatic actuation which is based on the attractive Coulomb force existing between charges of opposite polarity.
  • Electrostatic drive offers extremely low power consumption, in which power is consumed only during switching (compare a digital inverter stage).
  • Other advantages of using electrostatic actuation are the relatively simple fabrication technology, much simpler compared to for instance electromagnetic excitation, the high degree of compatibility with a standard IC process line, and the ease of integration with planar and micro-strip transmission lines.
  • RF-MEMS switches implementing electrostatic actuation are the best-developed RF-MEMS component at the moment and have been demonstrated on a laboratory scale by a number of companies and academic institutions from all over the world. A first clear wave of scientific publications and patents appeared halfway through the nineties, with clearly increased interest marked since the late nineties. The literature undoubtedly indicates the key advantages of RF-MEMS switches as compared to semiconductor solutions (GaAs FETs, PIN diodes).
  • known RF-MEMS devices have one major disadvantage, namely the risk of self-actuation when the RF signal reaches a high power and generates an RF induced force.
  • MEMS devices are known in which there is a lateral offset between a region of maximum actuation liability on the collapsible portion of the device (bridge or cantilever structure) and a conductor on which a signal can be applied.
  • This lateral offset results from the fact that the devices are designed with the goal of achieving a reduced actuation voltage.
  • characteristics of said collapsible portion are determined in such a way that in use the collapsible portion will be movable between a distant position further from the principal actuation area and a proximate position closer to the principal actuation area and that the movement of the collapsible portion will be actuatable by applying an attraction force within the principal actuation area.
  • the characteristics of said collapsible portion are furthermore determined in such a way that it will show a variable actuation liability in longitudinal direction, with a region of maximum actuation liability where the attraction force to be applied for actuation is a minimum over the whole principal actuation area.
  • a precondition is determined in function of the RF induced attraction force which may in use occur between the first and second conductors and which the device has to be able to withstand.
  • the first conductor is laterally offset by a predetermined distance from said region of maximum actuation liability, the distance being determined such that the precondition is met.
  • the offset has a predetermined distance, which is determined in view of the precondition, namely that the device has to be able to withstand a given RF induced attraction force which may in use occur between the first and second conductors.
  • the risk of self-actuation of the device in use can be substantially reduced, since the device is designed for withstanding RF induced forces at least below a given value, which is higher than the theoretical minimum attraction force.
  • the offset results from the devices being designed for achieving a lower actuation voltage, or more in general actuation at a reduced force.
  • the design is carried out in view of being able to withstand higher RF induced attraction forces, rather than in view of achieving actuation at a reduced attraction force.
  • This can lead to devices which are not only able to withstand higher RF induced attraction forces, but also to devices by means of which more RF power is transportable via one of the conductors with respect to the prior art.
  • the RF induced force which is present in the device in use and involves the risk of self-actuation may for example be caused by one of the conductors being an RF signal line for transporting RF signals, while the other conductor is connected to ground. Both the first conductor and the second conductor can form the RF signal line.
  • the RF induced force may however also result from other causes.
  • the conductors together may also form an interruptable RF signal line with the collapsible portion interrupting the RF signal line when in the distant position.
  • the method further comprises the step of locating an actuation electrode within the principal actuation area, adapted for in use actuating the collapsible portion by means of a DC voltage difference which is applied between the actuation electrode and the second conductor (or by means of a low frequency voltage).
  • This actuation is the desired actuation, not the self-actuation of the device of the invention.
  • This DC voltage difference generates the attraction force for moving the collapsible portion between the distant and proximate positions.
  • This electrostatic actuation scheme is preferred because of its advantages such as for example the low insertion loss, the extremely low stand-by power consumption, the wide bandwidth and the excellent linearity characteristics (minimal inter-modulation distortion).
  • electrostatic actuation scheme may prove very valuable are the integration capability with other high quality passives (high-Q inductors, varicaps, filter structures), the flexible choice of the substrate (which merely serves as a platform for the device) and, explicitly for relay configurations, the biasing scheme, which, for complex systems like large switching networks, can be greatly simplified.
  • other actuation schemes may also be used, such as for example with electrothermal, piezoelectric or electromagnetic means or any other known to the person skilled in the art.
  • the first conductor is laterally offset from the region of maximum actuation liability over such a distance that the DC voltage difference at which the collapsible portion is actuatable by means of the first conductor is not only above the minimum, but also above a given, predetermined threshold.
  • a sub-region of the collapsible portion is defined where the DC voltage difference to be applied for actuation is below the predetermined threshold and that the first conductor is located laterally offset from this sub-region.
  • this sub-region will fully comprise the region of maximum actuation liability.
  • the threshold voltage difference can be chosen in function of the RF power to be transmitted and the device can be designed accordingly with a corresponding lateral offset of the first conductor. As a result, the risk of self-actuation of the device can be minimised.
  • the precondition which has to be met according to the invention is that the threshold is above a DC equivalent of the RF induced force which may be experienced by the device in use.
  • the first conductor is accompanied by a separate actuation electrode which is closer to the region of maximum actuation liability, so that actuation of the device can be effected by means of this separate actuation electrode.
  • this separate actuation electrode is located such that it extends underneath the region of maximum actuation liability, so that the device can be actuated with a minimum DC voltage difference.
  • the first conductor is flanked by a pair of separate actuation electrodes, i.e. one on each side within the principal actuation area. This has the advantage that the stability of the proximate state of the collapsible portion can be enhanced.
  • Each of the electrodes i.e. the first conductor and if present any separate actuation electrode may or may not be covered by a dielectric layer on the side of the collapsible portion of the second conductor.
  • This dielectric layer then provides a contact surface (except when another layer is deposited on top of the dielectric layer or when the distance between the conductors is too large for contact) for the collapsible portion in the proximate position with the thickness of the layer determining the capacitance of the device in this state. So the dielectric layer can function to predetermine the capacitance of the device.
  • a floating contact may be deposited on top of one or more of the dielectric layers on top of the electrodes.
  • This floating contact may in turn be provided with a protrusion extending towards the collapsible portion.
  • the collapsible portion of the second conductor can for example be formed by an armature or any other equivalent structure known to the person skilled in the art.
  • This armature can be for example a bridge element extending between two fixed supports (generally but not exclusively a shunt switch) or a cantilever element extending from one fixed support (generally but not exclusively a series switch).
  • Figure 1 shows a schematic cross section of a prior art device.
  • Figure 2 shows a schematic cross section of a first embodiment of a device designed with the method according to the invention.
  • Figure 3 shows a schematic cross section of a second embodiment of a device designed with the method according to the invention.
  • Figure 4 shows a scheme of the theory behind the method according to the invention.
  • Figure 5 is linked with Figure 4 and illustrates the relation between a measure for stiffness and the position in a clamped beam.
  • Figures 6 and 7 show photographs of devices designed with the method according to the invention, viewed from above.
  • FIGS 8-11 show alternative embodiments of devices designed with the method according to the invention.
  • the drawings provide embodiments for shunt switches and series switches which have corresponding features of a bridge and a cantilever respectively, with relay actuation or actuation in zones attached to the floating electrode area, and provides devices for application in the field of switchable capacitors and capacitive switches.
  • the invention is however not limited to shunt switches and series switches, but is also applicable to variable capacitance devices and generally to all micro electromechanical devices in which RF induced forces occur.
  • the prior art MEMS device shown in figure 1 is a capacitive shunt switch. It is formed on a substrate 10 and comprises the following components: a first conductor 1 which is an RF signal line with a dielectric layer 3 on top and a second conductor 2 with a collapsible portion 4 extending between two fixed supports 5, 6 and overhanging the first conductor 1.
  • the collapsible portion 4 is movable between a distant position as shown in full lines and a proximate position as shown in broken lines. In the proximate position, the collapsible portion 4 lies on top of the dielectric layer 3.
  • the RF signal line is located in the middle underneath the collapsible portion 4, which has a symmetrical structure with a constant thickness so that its central region 7 is most sensitive to attraction forces. As a result, the signal line 1 is in the ideal position for actuation of the collapsible portion: right underneath the region 7 of maximum actuation liability.
  • the first embodiment of a MEMS device is also a shunt switch. It is formed on a substrate 20 and comprises the following components: a first conductor 11 with a dielectric layer 13 on top and a second conductor 12 with a collapsible portion 14 extending between two fixed supports 15, 16 and overhanging the first conductor 11.
  • the collapsible portion 14 is movable between a distant position as shown in full lines and a proximate position as shown in broken lines. It should be noted that the deformation of the collapsible portion 14 in the drawings does not represent the situation in reality but is given as example for clarification purposes.
  • the collapsible portion 14 In the proximate position, the collapsible portion 14 lies on top of the dielectric layer 13, whose thickness thus determines the capacitance in the proximate state.
  • the collapsible portion 14 has a symmetrical structure with a constant thickness so that its central region 17 is most sensitive to attraction forces.
  • the first conductor 11 is located underneath the collapsible portion 14, but laterally offset by a predetermined distance from the central region 17 of the collapsible portion 14. This distance is determined by means of the precondition that the device has to be able to withstand RF induced attraction forces which may in use occur between the first and second conductors 11, 12.
  • the device of figure 2 results is designed, for example but not necessarily on a computer, according to the invention as follows.
  • the first conductor 11 is given a location in a plane, which may for example correspond to the top surface of the substrate 20 in the finished device.
  • the second conductor 12 is placed with at least its collapsible portion 14 at a predetermined distance above the plane of the first conductor 11, such that the orthogonal projection of the collapsible portion onto the plane defines a principal actuation area through which the first conductor 11 extends.
  • it is the collapsible portion 14 of the second conductor 12 which may be attracted by the first conductor 11 as a result of RF induced forces, i.e. attraction forces induced by an RF signal present on either the first or the second conductor.
  • characteristics of the collapsible portion 14 are determined in order to fulfil the requirements which have to be met by the collapsible portion 14 in the finished device.
  • requirements are for example that the collapsible portion 14 has to be movable between the distant position and the proximate position and that the movement of the collapsible portion has to be actuatable by applying an attraction force within the principal actuation area.
  • Another characteristic is that it will show a variable actuation liability in longitudinal direction, so that there is with a region of maximum actuation liability 17 where the attraction force to be applied for actuation is a minimum over the whole principal actuation area.
  • a precondition is determined in function of the RF induced attraction force which may in use occur between the first and second conductors 11, 12 and which the device has to be able to withstand.
  • the distance by which the first conductor 11 has to be laterally offset from the region 17 is calculated on the basis of this precondition.
  • the first conductor 11 is moved in the principal actuation area on the plane at least by the calculated distance. This will ensure that the precondition is met by the finished device, which has the effect that the risk of self-actuation of the finished device in use can be substantially reduced.
  • the thickness of the dielectric 13 on top of the first conductor 11 is determined in function of the desired capacitance of the device in use in the collapsed state.
  • the first conductor 11 of the finished device is in a non-ideal position for actuating the collapsible portion 14.
  • a DC voltage difference can be applied between the first and second conductors 11, 12. Because of the non-ideal actuation position of the first conductor, this DC voltage difference and hence the attraction force generated by it are above the minimum of the device and furthermore above a given value, namely the DC equivalent of a given RF induced attraction force which may in use occur between the first and second conductors and which the device has to be able to withstand according to the precondition in the design stage.
  • the minimum of the device is in the middle of the area defined by the orthogonal projection of the collapsible portion 14 onto the plane of the first conductor 11, i.e. right underneath the region 17 of the collapsible portion 14 most liable to actuation.
  • the orthogonal projection area is herein called the "principal actuation area”.
  • the first conductor 11 is offset from a sub-region 18 surrounding the central region 17 of the collapsible portion 14. Underneath the sub-region 18, an attraction force above a given threshold strength would actuate the collapsible region. Dislocating the first conductor 11 from this sub-region 18 thus has the effect that the DC voltage difference and consequently the RF power at which actuation occurs is not only above the minimum, but also above a given threshold which is predetermined by the sub-region 18.
  • An RF-MEMS device is typically designed for carrying RF signals above its lowest natural frequency and not at one of its higher natural frequencies.
  • the invention can however be applied to MEMS devices for any RF frequency, preferably within the range 100 MHz to 100 GHz but not limited thereto.
  • a "natural frequency” is in the art also called a "mechanical resonance frequency”.
  • the substrate 20 may for example be, but is not limited to, glass, high resistive semiconductors, ceramic materials, or any low loss or very low loss, non-conductive material. With low loss is meant that the substrate may have a loss tangent which is smaller than 0.001. With very low loss is meant that the substrate may have a loss tangent which is smaller than 0.0001.
  • the first conductor 11 which may be in a coplanar waveguide (CPW) line corresponding to a signal line, may consist of a conductive material such as for example a metal, a semiconductor material or a conductive polymer. Any suitable signal feeding system may be used, e.g. besides a CPW geometry, also microstrip, stripline or CPW with grounded backside geometries may be used.
  • the first conductor 11 may be produced by means of suitable techniques for the deposition of a conductive material such as for instance, but not limited to, sputtering, plating, printing or spincoating.
  • the thickness of the first conductor 11, as well as the ground lines present in some of the preferred embodiments designed according to the invention (see further), may preferably be between 0.1 ⁇ m and 10 ⁇ m and more preferably the thickness of the first conductor 11 may be between 1 ⁇ m and 3 ⁇ m.
  • the dielectric layer 13 may consist of a dielectric material such as for example, but not limited to, inorganic (SiO 2 , Ta 2 O 5 Si 3 N 4 ) or organic (polymer) materials.
  • the dielectric layer 13 may preferably have a thickness between 0.01 ⁇ m and 100 ⁇ m. More preferably the dielectric layer 13 may have a thickness between 0.01 ⁇ m and 10 ⁇ m. Most preferably the dielectric layer 13 may have a thickness between 0.1 ⁇ m and 1 ⁇ m.
  • a thin dielectric layer 13 may be preferred over a thick one. The dielectric layer 13 may however not be too thin in order to avoid breakdown of the capacitor.
  • the dielectric layer 13 may be deposited onto at least part of the bottom electrode 11. Different processes may be used for producing the dielectric layer 13, which processes may consist of different steps. Such steps can comprise, but are not limited to, steps like for example sputtering, anodization, or PECVD (Plasma Enhanced Chemical Vapour Deposition). Furthermore, the dielectric layer 13 may include holes and may have different shapes and sizes.
  • the collapsible portion 14, which is also called the armature, may be formed by first depositing a sacrificial layer (not shown) on top of this structure on which, in a next step, the armature 14 may be formed.
  • the sacrificial layer should be selectively removable.
  • the sacrificial layer may for example be a polymer, such as for example BCB, polyimide or other suitable polymers used as photoresists in microphotolithography and known to the skilled person.
  • the sacrificial layer may as well be an oxide as for instance a silicon oxide, a nitride, a metal, semiconductor material, SiGe, etc.... The thickness of the sacrificial layer determines the distance between the armature 14 and the dielectric layer 13.
  • the thickness of the sacrificial layer may be between 0.8 ⁇ m and 10 ⁇ m. More preferably the thickness may be between 1 ⁇ m and 5 ⁇ m. Most preferably the thickness of the sacrificial layer may be between 2 ⁇ m and 4 ⁇ m.
  • the armature 14, which may be deposited on top of the sacrificial layer by for example sputtering, plating, printing or spincoating, may consist of for example a conductive material such as a metal (Au, Al, Cu or other suitable metals), a semiconductor material (Si, Ge, SiGe, GaAs), a conductive polymer or any other suitable conductive material. Openings in the armature 14 may be formed by means of for example an etching process. During the same etching process the sacrificial layer may be removed. Typically an additional step is performed for removing the sacrificial material, through the formed openings.
  • the armature 14 has a substantially symmetrical structure with the region 17 of maximum actuation liability substantially in the middle.
  • the armature 14 may also be designed as an asymmetrical structure, with the region 17 of maximum actuation liability offset from the middle, in which case the first conductor 11 may for example be located in the middle or offset in opposite direction.
  • the armature 14 may have a variable width or thickness in longitudinal direction (ie going from left to right in Figure 2), or be provided with a stiffening layer over a portion of its length, etc.
  • the orthogonal projection of the collapsible portion or armature 14 onto the plane of the first conductor 11 is herein called the "principal actuation area" for the following reason: the collapsible portion 14 is not only actuatable by electrodes within this area but for example also by electrodes adjacent the longitudinal edges of this area. In other words, the principal actuation area is not the only area where actuation electrodes may be located.
  • the device shown in figure 3 differs from that of figure 2 in that an actuation electrode 19 is provided in the principal actuation area.
  • DC voltage is applied to this electrode for actuating the collapsible portion 14 of the second conductor 12.
  • the electrode 19 is provided with a dielectric layer 19 for insulation purposes when the collapsible portion 14 is in the proximate position.
  • the thickness of the dielectric 21 determines the capacitance in that state.
  • Other devices which are designed according to the invention may also comprise one or more further actuation electrodes, which may or may not be provided with a dielectric layer 13, 21 on top depending on whether contact is made in the proximate state or not.
  • the actuation electrode extends up to the region 17 of maximum actuation liability, although this is not essential.
  • the device of figure 3 is actuatable by applying substantially the minimum DC voltage difference over the second conductor and the actuation electrode 19. Consequently, the device of figure 3 is actuatable at a lower DC voltage difference than the device of figure 2.
  • the DC voltage can be simultaneously applied to the first conductor 11 to enhance the stability in the proximate position.
  • the first conductor 11 is a coplanar waveguide (CPW) signal line.
  • the first conductor 11 is a central line which in use actually carries the RF signal and is flanked by ground planes 15, 22 which are connected to ground against interference.
  • Figure 4 schematically illustrates the main principle behind the method of the invention, by comparing the electrostatic actuation of a collapsible portion of a conductor at two different locations.
  • stiffness is meant the resistance to actuation, i.e. the opposite of actuation liability.
  • the stiffness ratio ⁇ is defined as the ratio of the membrane stiffness (caused by the residual stress ⁇ o ), and the bending (or flexural) stiffness and is a function of the residual film stress ⁇ o , Young's modulus E and of the material and the thickness h of the collapsible portion.
  • the devices shown in figures 6 and 7 have been manufactured in accordance with the method of the invention. Both devices have actuation electrodes 58, 59 on opposite sides of the first conductor 51, 61, so that in use a good stability in the proximate state or downstate can be achieved.
  • the lateral offset is again created by the position of the first conductor 51, 61, the region 57 of maximum actuation liability being again substantially in the middle of the armature 54.
  • the armature 54 narrows over the first conductor 51, 61, which is the signal line, for decreasing the capacitance in the distant position and further reducing the risk of self-actuation.
  • the signal line 61 narrows at the crossing for further increasing the capacitance.
  • FIGS. 8-11 Alternative embodiments of devices designed according to the method of the invention are shown in figures 8-11. These devices also have the following features which have already been described in great detail above and will therefore not be detailed here: the substrate 30, the first conductor 31 with the dielectric 33, the fixed supports 35, 36, the second conductor 32 with the collapsible portion or armature 34 and its region 37 of maximum actuation liability.
  • the region 37 of maximum actuation liability again being in substantially in the middle, the lateral offset is created by the position of the first conductor 31.
  • the first conductor 31 is flanked by actuation electrodes 39, 42, each having a dielectric 41, 43 on top.
  • the one on the right 39 extends underneath the region 37 of maximum actuation liability, so that the device is actuatable at the minimum DC voltage.
  • figure 10 combines the ones of figures 8 and 9:
  • the armature 34 and the floating electrode 44 may for example be formed out of the same material.
  • the armature 34 and the floating electrode 44 may, however, also be formed out of different materials. In the latter case, stiction between the armature 33 and the floating electrode 44 in the down state will be reduced.
  • the floating electrode 44 may be deposited by different suitable techniques, such as for example plating, sputtering, printing or spincoating, onto at least part of the dielectric layer 33.
  • the floating electrode 44 may consist essentially of a conductive material such as for example a metal (e.g. Au, Al or Cu), a semiconductor material (e.g. Si, Ge, SiGe, GaAs) or a conductive polymer.
  • a low temperature process may be used in order not to affect the earlier deposited layers.
  • the maximum allowed temperature depends on the type of materials used to form the dielectric layer 33 and/or the bottom electrode 31 and preferably may be less than 350 DEG C or less than 250 DEG C.
  • the thickness of the floating electrode 44 may preferably be between 0.01 ⁇ m and 10 ⁇ m. More preferably the thickness may be between 0.1 ⁇ m and 2 ⁇ m. Even more preferably the thickness of the floating electrode 44 may be between 0.1 ⁇ m and 1 ⁇ m. Most preferably the thickness of the floating electrode 44 may be between 0.1 ⁇ m and 0.3 ⁇ m.
  • the first conductor 71 is located between the support 75 and the electrode 78.
  • the first conductor 71 and the electrode 78 are each provided with dielectric layers 73, 79 which form contact surfaces for the cantilever element in the proximate position.
  • the device of figure 12 is actuated by applying a DC voltage difference over the second conductor 72 and the electrode 78.
  • the first conductor 71 may be placed at the same potential as the electrode 78 for increasing stability in the downstate.

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EP20050112976 2004-12-27 2005-12-23 Verfahren zum Entwurf einer mikroelektromechanischen Vorrichtung mit verringerter Selbstbetätigung Not-in-force EP1675148B1 (de)

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EP20050112976 EP1675148B1 (de) 2004-12-27 2005-12-23 Verfahren zum Entwurf einer mikroelektromechanischen Vorrichtung mit verringerter Selbstbetätigung

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Application Number Priority Date Filing Date Title
US63974804P 2004-12-27 2004-12-27
EP05103893A EP1722386A1 (de) 2005-05-10 2005-05-10 Mikroelektromechanische Vorrichtung mit verringerter Selbstbetätigung
EP20050112976 EP1675148B1 (de) 2004-12-27 2005-12-23 Verfahren zum Entwurf einer mikroelektromechanischen Vorrichtung mit verringerter Selbstbetätigung

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EP1675148A1 true EP1675148A1 (de) 2006-06-28
EP1675148B1 EP1675148B1 (de) 2009-12-02

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Cited By (1)

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WO2013189570A1 (de) * 2012-06-18 2013-12-27 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Schalter

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EP0709911A2 (de) * 1994-10-31 1996-05-01 Texas Instruments Incorporated Verbesserte Schalter
WO2002001584A1 (en) * 2000-06-28 2002-01-03 The Regents Of The University Of California Capacitive microelectromechanical switches
US20040000696A1 (en) * 2001-08-30 2004-01-01 Qing Ma Reducing the actuation voltage of microelectromechanical system switches

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Publication number Priority date Publication date Assignee Title
EP0709911A2 (de) * 1994-10-31 1996-05-01 Texas Instruments Incorporated Verbesserte Schalter
WO2002001584A1 (en) * 2000-06-28 2002-01-03 The Regents Of The University Of California Capacitive microelectromechanical switches
US20040000696A1 (en) * 2001-08-30 2004-01-01 Qing Ma Reducing the actuation voltage of microelectromechanical system switches

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DUCAROUGE, B. ET AL: "Power capabilities of RF MEMS", 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, 2004., vol. 1, 16 May 2004 (2004-05-16), pages 65 - 70, XP002370583 *
PEROULIS, D. ET AL: "RF MEMS switches with enhanced power-handling capabilities", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 52, January 2004 (2004-01-01), pages 59 - 68, XP002370637 *
ROTTENBERG, X. ET AL: "MEMS capacitive series switches: optimal test vehicles for the RF self-biasing phenomenon", 18TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, 2005, 30 January 2005 (2005-01-30), pages 147 - 150, XP002370641 *
ROTTENBERG, X. ET AL: "Modelling of the RF self-actuation of electrostatic RF-MEMS devices.", 17TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, 2004., 2004, pages 245 - 248, XP002370640 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013189570A1 (de) * 2012-06-18 2013-12-27 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Schalter
CN104412348A (zh) * 2012-06-18 2015-03-11 罗森伯格高频技术有限及两合公司 开关
US9396885B2 (en) 2012-06-18 2016-07-19 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Switch
AU2013279812B2 (en) * 2012-06-18 2016-12-01 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Switch

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