EP1601611B1 - System and method for buried electrical feedthroughs in a glass-silicon mems process - Google Patents
System and method for buried electrical feedthroughs in a glass-silicon mems process Download PDFInfo
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- EP1601611B1 EP1601611B1 EP04719227A EP04719227A EP1601611B1 EP 1601611 B1 EP1601611 B1 EP 1601611B1 EP 04719227 A EP04719227 A EP 04719227A EP 04719227 A EP04719227 A EP 04719227A EP 1601611 B1 EP1601611 B1 EP 1601611B1
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- European Patent Office
- Prior art keywords
- silicon
- glass layer
- glass
- sealed cavity
- cavity
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 39
- 239000010703 silicon Substances 0.000 title claims abstract description 39
- 239000011521 glass Substances 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000007789 sealing Methods 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 59
- 238000000151 deposition Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 17
- 210000001520 comb Anatomy 0.000 description 8
- 239000002184 metal Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- WABPQHHGFIMREM-BKFZFHPZSA-N lead-212 Chemical compound [212Pb] WABPQHHGFIMREM-BKFZFHPZSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/097—Interconnects arranged on the substrate or the lid, and covered by the package seal
Definitions
- This invention relates generally to micro-electromechanical structures (MEMS) processes, and more specifically to electrical connections from the inside to the outside of a sealed cavity formed in MEMS processes.
- MEMS micro-electromechanical structures
- MEMS micro-electromechanical structures
- a patterned silicon wafer to a glass (usually pyrex) substrate. Portions of the silicon wafer are etched away, leaving a mechanical silicon structure anchored to the glass substrate. The process is initiated with a glass wafer. A cavity is formed in the wafer using a wet or dry etching process. A depth of the etch determines a separation between the structure's capacitive elements.
- Metal layers are deposited and patterned on the glass, forming conductive electrodes and interconnects.
- a heavily boron doped (p++) epitaxial layer is grown on a separate, lightly doped silicon substrate. A pattern is etched into the silicon wafer to a depth greater than the thickness of the epitaxial layer.
- the glass and silicon wafers are bonded together using anodic bonding.
- an etchant that etches lightly doped silicon but not p++ silicon the undoped portion of the silicon substrate is etched away, leaving the freestanding microstructures.
- Such a process is generally referred to herein as a silicon-glass MEMS process.
- the mechanical structures are exposed to the ambient environment during operation. Therefore, if the mechanism requires a special operating environment, or simply protection from the ambient environment, the protection must be done at a packaging step.
- One packaging step is to form the mechanical structures in the silicon-glass MEMS process within hermetically sealed cavities.
- One known method for forming such cavities is to bond a silicon structure, containing a recess, to the glass wafer.
- the recessed portion which does not extend all the way through the p++ silicon layer, forms the cavity after bonding.
- a silicon structure for example, a vibrating sensor, that is completely enclosed by the cavity but not connected to the cavity walls.
- Another method is to bond a second glass wafer, containing recesses, on top of the previously fabricated glass/Si wafer: At least part of the silicon structure is a continuous seal ring that completely surrounds, but is not connected to, a second silicon structure (i.e. the vibrating sensor). The second glass wafer is bonded to the seal ring, but not to the second silicon structure, forming the cavity.
- DE-A-19636914 discloses a void-free trench filling process.
- EP-A-1167281 discloses a chip scale surface-mountable packaging method for electronic and MEMS devices.
- a method for providing conductive paths into a hermetically sealed cavity, the sealed cavity formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process comprising:
- FIG. 1 is a schematic illustration of a micro electromechanical system (MEMS) gyroscope 10.
- MEMS gyroscope 10 may include a housing 12 that includes therein a tuning fork gyroscope (TFG) 14.
- Housing 12 may be a plastic package, a small outline integrated circuit (SOIC) package, a plastic leadless chip carrier (LCC) package, a quad flat package (QFP), or other housings as known in the art.
- Housing 12 may provide a structure to co-locate elements of TFG 14 and/or locate other elements within a close proximity of one another within the housing 12.
- TFG 14, in one embodiment, is located within a substantially sealed cavity 16 which is formed by bonding silicon to a glass substrate. Substantially sealed cavity 16 provides separation between sensitive elements of TFG 14 and drive electronics, described below.
- TFG 14 may include proof masses 18, motor drive combs 20, motor pickoff combs 22, and sense plates 24.
- a pre-amplifier 26 may be included within housing 12 and may be electrically connected or coupled to each proof mass 18 and sense plate 24 combination. Pre-amplifier 26 and TFG 14 may both be formed on a common substrate and, in one embodiment, may be electrically connected. In other embodiments, pre-amplifier 26 may be electrically connected to proof masses 24. An output of pre-amplifier 26 may be sent to sense electronics 28, or alternatively, pre-amplifier 26 may be incorporated within sense electronics 28. No matter which configuration is utilized, electrical connections between TFG 14 and one or both of pre-amplifier 26 and sense electronics 28 exist for gyroscope 10 to be functional.
- an output 30 of motor pickoff combs 22 is transferred to feedback monitors 32.
- Feedback monitors 32 provide output signals 34 to drive electronics 36, which power motor drive combs 20.
- feedback monitors 32 may be incorporated within drive electronics 36. Again, connections to elements of TFG 14 are made to feedback monitors 32 and drive electronics 36 in order for gyroscope 10 to be functional.
- MEMS gyroscope 10 may also include a system power source and other operational electronics, which are not shown in Figure 1 for ease of illustration.
- Motor drive combs 20 excite the proof masses 18 using electrostatic forces by applying a voltage between drive combs 20 and interdigitated comb teeth of proof masses 18.
- Motor pickoff combs 22 monitor the excitation or oscillation of proof masses 18 by monitoring voltage signals on electrodes on proof masses 18. Motor pickoff combs 22 output a feedback signal to feedback monitors 32.
- Feedback monitor 32 provides an output 34 which is input to drive electronics 36. If proof masses 18 begin to oscillate too fast or too slow, drive electronics 36 may adjust an oscillation frequency such that proof masses 18 vibrate at a resonant frequency. Excitation at such a frequency may enable a higher amplitude output signal to be generated.
- pre-amplifier 26, sense electronics 28, feedback monitor 32, and drive electronics 36 may be referred to collectively as gyroscope electronics.
- FIG 2 is a cross-sectional view illustrating one known method for bonding silicon to a glass substrate in order to form a hermetically sealed cavity 50.
- a glass substrate 52 includes bonding surfaces 54 to which a sealing ring 56 also having bonding surfaces 58 is anodically bonded.
- Sealing ring 56 is, in the embodiment shown, a continuous seal ring that completely surrounds, but is not connected to, a second silicon structure 60.
- sealing ring 56 is made of silicon.
- Silicon structure 60 for example, could be a vibrating sensor, including, but not limited to, tuning fork gyroscope 14 (shown in Figure 1).
- a second glass substrate 62 having a bonding surface 64 is subsequently bonded to a bonding surface 66 of sealing ring 56, but not second silicon structure 60, thereby forming cavity 50.
- sealing ring 56 is first bonded to second glass substrate 62. While referred to as a ring, sealing ring 56 is understood to include any and all shapes which could be utilized to form a cavity as needed for specific applications.
- Figure 3 illustrates the structure described with respect to Figure 2, but with an addition of an electrical lead 70 from within cavity 50 to a position outside of cavity 50.
- An electrical lead 70 is placed on glass substrate 52 to provide an electrical connection between silicon structure 60 and a circuit (not shown) outside of cavity 50.
- a single lead 70 is shown, it is understood that embodiments exist where multiple leads 70 are needed between silicon structure 60 and the circuit outside of cavity 50, for example between a tuning fork gyroscope 14 (shown in Figure 1) and gyroscope electronics.
- Figure 3 further illustrates that when electrical leads 70 are utilized, at least a portion of bonding surfaces 54 of glass substrate 52 and at least a portion of bonding surfaces 58 of sealing ring 56 no longer make contact. Further, since bonding surfaces 54 and 58 are substantially flat, areas of bonding surface 58 exist which do not make contact with bonding surface 54, making it difficult to maintain hermetically sealed cavity 50. In other words, routing electrical leads 70 between bonding surfaces 54 and 58 can cause the hermetic seal to be compromised, as portions of bonding surfaces 54 and 58 are separated from one another due to the presence of electrical leads 70.
- Figure 4 illustrates an improved structure for passing an electrical signal into a hermetically sealed cavity formed at least in part through a silicon-glass MEMS process.
- the embodiment illustrated in Figure 4 utilizes a modified glass substrate 80 where at least one recess 82 is formed into glass substrate 80 where it is desired to pass an electrical signal into hermetically sealed cavity 84.
- An electrical lead 86 is formed within recess 82 and extending on an upper surface 88 of substrate 80.
- electrical lead 86 is conductive and fabricated from metal.
- Lead 86 is constructed such that extending portions 88 extend into cavity 84 and to an area outside where sealing ring 90 is to be placed, for connection to an electrical circuit.
- sealing ring 90 is made from silicon.
- a glass deposit 92 is placed within recess 82 and on top of lead 86 according to methods described further with respect to Figure 5. Glass deposit 92 provides a bonding surface 94 for sealing ring 90.
- the described embodiment therefore solves the sealing problems described above, by essentially creating an electrical path underneath a surface of glass substrate 80. Further, a substantially flat surface 94 is provided for bonding with a surface 96 of sealing ring 90 and creating a hermetic seal for cavity 84, which may be necessary for operation of silicon structure 98.
- silicon structure 98 may be fabricated from a silicon wafer (not shown) that is disposed upon glass substrate 80, while sealing ring 90 is fabricated from a silicon wafer (not shown) that is disposed on second glass substrate 62.
- second glass substrate 62 By placing second glass substrate 62, with sealing ring 90, onto glass substrate 80 (and glass deposits 92 in relevant locations, the sealed cavity 84 is formed.
- sealing ring 90 may be formed on glass substrate 80 while silicon structure 98 is formed on second glass substrate 62.
- sealing ring 90 and silicon structure 98 can be formed from a single silicon wafer (not shown) that is disposed on either glass substrate 80 or second glass substrate 62. Whichever method is utilized, the result is that at least a portion of sealing ring is fabricated to form a seal with glass deposit 92 and a portion of sealing ring 90 is fabricated to form a seal with a portion of glass substrate 80.
- Figure 5 illustrates a process for providing electrical signals into a cavity, while maintaining a hermetic seal around the cavity, similar to the structure illustrated in Figure 4.
- a glass substrate 100 has at least one recess 102 formed on a surface 104 of substrate 100.
- recesses 102 are etched in glass substrate 100 everywhere that an electrical feedthrough for an electrical signal is needed.
- conductive leads 106 are deposited and patterned in and around recesses 102.
- Figure 5C illustrates a glass layer 108 that has been deposited over the entire surface 104 of substrate 100. Glass layer 108 covers both recesses 102 and conductive leads 106.
- glass layer 108 is then planarized, utilizing chemical-mechanical polishing or other techniques, to a level where a first contact 110 and a second contact 112 of leads 106 are exposed. This process leaves a conductive lead 106 within recess 102, which is substantially covered by glass layer 108 and providing a surface 114 that is essentially planar with a surrounding glass surface 116.
- glass layer 108 is planarized to a first level, then the planarized glass layer is etched to a level where first contact 110 and second contact 112 of leads 106 are exposed.
- electrical contacts 118 for example, to electrical circuits (not shown) can be attached to first contact 110 and second contact 112 of electrical leads 106 since they are now exposed.
- a silicon wafer 120 is then bonded to planarized substrate surfaces 114 and 116 (bonding to surface 116 not shown) such that electrical leads 106 go under silicon wafer 120, but do not cause a loss of a hermetic seal between silicon wafer 120 and glass substrate 100 (glass layer 108).
- Electrical leads 106 are functionally and structurally equivalent to electrical leads 86 (shown in Figure 4).
- FIG. 6 is a schematic illustration of a MEMS gyroscope 130 which utilizes electrical feedthroughs 132 from a hermetically sealed cavity 134.
- Hermetically sealed cavity 134 provides an operating environment for tuning fork gyroscope (TFG) 136.
- Electrical feedthroughs 132 are provided through utilization of electrical leads 86 (shown in Figure 4).
- TFG 136 for the purposes herein may be considered to be one embodiment of silicon structure 98 (shown in Figure 4).
- Substantially sealed cavity 134 provides separation between sensitive elements of TFG 136 and drive electronics.
- Pre-amplifier 26 and TFG 136, feedback monitor 32 and TFG 136, and drive electronics 36 and TFG 136 may be electrically connected utilizing electrical leads 86.
- electrical leads 86 provide the electrical connections between TFG 136 and gyroscope electronics.
- Figure 7 illustrates an alternative structure 150 for providing a hermetically sealed cavity 152 utilizing a silicon-glass MEMS process.
- structure 150 rather than a sealing ring and a second glass substrate (as shown in Figure 4), a silicon device 154 with a recess 156 formed therein is utilized to form cavity 152.
- a glass substrate 158 is bonded to silicon device 154.
- glass substrate 158 includes a recess 160 formed into glass substrate 158 where it is desired to pass an electrical signal into hermetically sealed cavity 152.
- An electrical lead 162 in one embodiment a conductive lead, is formed within recess 160 and extends onto an upper surface 164 of substrate 158.
- a glass deposit 166 is placed within recess 160 and on top of lead 168 utilizing the processes described above. Glass deposit 166 provides a bonding surface 170 for bonding with bonding surface 172 of silicon structure 154, and therefore allows construction of hermetically sealed cavity 152.
- Figure 8 illustrates an alternative embodiment (in cross-section) of a structure 200 for providing a hermetically sealed cavity 202 utilizing a silicon-glass MEMS process.
- a modified glass substrate 204 is utilized in forming cavity 202 along with a sealing ring 206 that is, or will be, attached to glass substrate 208.
- At least one recess 210 is formed into glass substrate 204 where it is desired to pass an electrical signal into hermetically sealed cavity 202.
- An electrical lead 212 is formed on recess 210 and extending to an upper surface 214 of substrate 204, for connection to a device 216.
- electrical lead 212 is conductive and fabricated from metal.
- sealing ring 206 is made from silicon.
- Lead 212 is constructed such that portion 218 extends into cavity 202 for connection to device 216, and portion 220 extends to an area outside of where sealing ring 206 is eventually placed, for connection to an electrical circuit (not shown).
- upper surface 222 of electrical lead 212 is within recess 210, upper surface 222 is below an upper surface 224 of substrate 204, making hermetic sealing with sealing ring difficult.
- a glass deposit 226 is deposited on upper surface 222 of electrical lead 212, within recess 210. Glass deposit 226 is planarized such that an upper surface 228 is formed which is at a same level as upper surface 224 of substrate 204.
- Upper surface 228 of glass deposit 226 is eventually bonded to sealing ring 206 to form sealed cavity 202, to allow proper operation of silicon structure 230.
- the described embodiment therefore solves the sealing problems described above, by essentially creating an electrical path underneath glass deposit 226. Further, a substantially flat surface (upper surface 228) is provided for bonding with a surface 232 of sealing ring 206 and creating a hermetic seal for cavity 202, which may be necessary for operation of silicon structure 230.
- devices for example, MEMS pressure sensors, resonators, and temperature sensors, are to be constructed utilizing the structures illustrated in Figures 7 and 8. It is further intended that any differences between the structures of Figures 4, 7, and 8 show only different manufacturing embodiments for MEMS devices. Further, other devices are contemplated which utilize electrical feedthroughs as shown and described with respect to Figures 4, 7, and 8, including, but not limited to, accelerometers, pressure sensing devices, and other MEMS devices.
- the above described embodiments provide electrical feedthroughs into a hermetically sealed cavity.
- the methods and structures described herein extend to applications other than those which involve passage of electrical conductors into and out of sealed cavities.
- the electrical feed throughs described may also be utilized to provide electrical connections between portions of a silicon structure that is fabricated from a patterned silicon wafer. More specific examples would be electrical connections between portions of silicon structure 98 (shown in Figure 4) and between portions of silicon structure 230 (shown in Figure 8).
- Such methodology extends to providing electrical connections between any electrical components that can be disposed or mounted on glass substrates.
- the herein described methods involve utilization of feedthroughs which are essentially embedded underneath a smooth glass surface, allowing a much better seal between silicon and glass.
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Abstract
Description
- This invention relates generally to micro-electromechanical structures (MEMS) processes, and more specifically to electrical connections from the inside to the outside of a sealed cavity formed in MEMS processes.
- One method of producing micro-electromechanical structures (MEMS) is by bonding a patterned silicon wafer to a glass (usually pyrex) substrate. Portions of the silicon wafer are etched away, leaving a mechanical silicon structure anchored to the glass substrate. The process is initiated with a glass wafer. A cavity is formed in the wafer using a wet or dry etching process. A depth of the etch determines a separation between the structure's capacitive elements. Metal layers are deposited and patterned on the glass, forming conductive electrodes and interconnects. A heavily boron doped (p++) epitaxial layer is grown on a separate, lightly doped silicon substrate. A pattern is etched into the silicon wafer to a depth greater than the thickness of the epitaxial layer. The glass and silicon wafers are bonded together using anodic bonding. Using an etchant that etches lightly doped silicon but not p++ silicon, the undoped portion of the silicon substrate is etched away, leaving the freestanding microstructures. Such a process is generally referred to herein as a silicon-glass MEMS process.
- The mechanical structures are exposed to the ambient environment during operation. Therefore, if the mechanism requires a special operating environment, or simply protection from the ambient environment, the protection must be done at a packaging step.
- One packaging step is to form the mechanical structures in the silicon-glass MEMS process within hermetically sealed cavities. One known method for forming such cavities is to bond a silicon structure, containing a recess, to the glass wafer. The recessed portion, which does not extend all the way through the p++ silicon layer, forms the cavity after bonding. Unfortunately, using this method it is difficult to make a silicon structure, for example, a vibrating sensor, that is completely enclosed by the cavity but not connected to the cavity walls.
- Another method is to bond a second glass wafer, containing recesses, on top of the previously fabricated glass/Si wafer: At least part of the silicon structure is a continuous seal ring that completely surrounds, but is not connected to, a second silicon structure (i.e. the vibrating sensor). The second glass wafer is bonded to the seal ring, but not to the second silicon structure, forming the cavity.
- However, it is desirable to have electrical leads extending from outside the cavities into the hermetically sealed cavities, without breaking the seal. A seal is much more difficult to attain since formation of the electrical leads form uneven topography on the glass substrate surface. Small gaps occur where the leads are formed on the substrate. The gaps result in an uneven sealing surface and result in unbonded areas which break the hermetic seal. Anodic bonding is one method that has been used in an attempt to alleviate this problem. However, anodic bonding can only be accomplished over uneven areas that fluctuate by about 200 angstroms or less, and a long term leak rate for anodic bonding seals is unknown. Therefore, in order to have leads that extend through a reliable hermetic seal, a topography used in making the seal should be substantially flat.
- DE-A-19636914 discloses a void-free trench filling process.
- EP-A-1167281 discloses a chip scale surface-mountable packaging method for electronic and MEMS devices.
- According to a first aspect of the invention, there is provided a method for providing conductive paths into a hermetically sealed cavity, the sealed cavity formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process, said method comprising:
- forming recesses on a glass substrate where conductive paths are to pass into the cavity;
- forming conductive leads in and around the recesses;
- depositing a glass layer over the substrate, into the recesses, and over the conductive leads;
- planarizing the deposited glass layer to a level of the conductive leads to expose portions of the conductive leads;
- forming a sealing surface on at least a portion of the glass layer; and
- bonding silicon to the sealing surface of the planarized glass layer, the silicon positioned such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.
- According to a second aspect of the invention, there is provided a structure having a hermetically sealed cavity therein, said structure having at least one electrically conductive path passing from outside of the sealed cavity to inside the sealed cavity, said structure comprising:
- a glass substrate comprising recesses where electrical signals are to pass into the sealed cavity;
- conductive leads deposited in and around said recesses;
- a glass layer deposited over said substrate, said glass layer further deposited over said recesses and said conductive leads, said glass layer planarized to a level of a portion of said conductive leads around said recesses; and
- silicon, bonded to said planarized glass layer to form a cavity, said silicon fabricated such that a portion of each said conductive lead is within the sealed cavity and a portion of each said conductive lead is outside the sealed cavity.
- In the drawings:
- Figure 1 is a schematic illustration of a MEMS gyroscope;
- Figure 2 illustrates a structure formed utilizing a method for making a hermetically sealed cavity using a silicon-glass MEMS process;
- Figure 3 illustrates a structure where an electrical lead is passed into a hermetically sealed cavity formed using the silicon-glass MEMS process;
- Figure 4 illustrates an improved method for passing an electrical lead into a hermetically sealed cavity formed using the silicon-glass MEMS process;
- Figure 5 is a step-by-step illustration of the method of Figure 4;
- Figure 6 is a functional illustration of a MEMS gyroscope which shows areas where the electrical feedthroughs of Figure 4 are utilized;
- Figure 7 illustrates an alternative embodiment of a structure which provides electrical leads into a hermetically sealed cavity; and
- Figure 8 illustrates an alternative embodiment of a structure which provides electrical leads into a hermetically sealed cavity.
- Figure 1 is a schematic illustration of a micro electromechanical system (MEMS)
gyroscope 10. MEMSgyroscope 10 may include ahousing 12 that includes therein a tuning fork gyroscope (TFG) 14.Housing 12 may be a plastic package, a small outline integrated circuit (SOIC) package, a plastic leadless chip carrier (LCC) package, a quad flat package (QFP), or other housings as known in the art.Housing 12 may provide a structure to co-locate elements ofTFG 14 and/or locate other elements within a close proximity of one another within thehousing 12.TFG 14, in one embodiment, is located within a substantially sealedcavity 16 which is formed by bonding silicon to a glass substrate. Substantially sealedcavity 16 provides separation between sensitive elements ofTFG 14 and drive electronics, described below. - In one embodiment, TFG 14 may include
proof masses 18,motor drive combs 20,motor pickoff combs 22, andsense plates 24. A pre-amplifier 26 may be included withinhousing 12 and may be electrically connected or coupled to eachproof mass 18 andsense plate 24 combination. Pre-amplifier 26 and TFG 14 may both be formed on a common substrate and, in one embodiment, may be electrically connected. In other embodiments, pre-amplifier 26 may be electrically connected toproof masses 24. An output of pre-amplifier 26 may be sent to senseelectronics 28, or alternatively, pre-amplifier 26 may be incorporated withinsense electronics 28. No matter which configuration is utilized, electrical connections betweenTFG 14 and one or both of pre-amplifier 26 andsense electronics 28 exist forgyroscope 10 to be functional. - In addition, an
output 30 ofmotor pickoff combs 22 is transferred tofeedback monitors 32.Feedback monitors 32 provideoutput signals 34 to driveelectronics 36, which power motor drive combs 20. Alternatively,feedback monitors 32 may be incorporated withindrive electronics 36. Again, connections to elements ofTFG 14 are made to feedback monitors 32 and driveelectronics 36 in order forgyroscope 10 to be functional.MEMS gyroscope 10 may also include a system power source and other operational electronics, which are not shown in Figure 1 for ease of illustration. - Motor drive combs 20 excite the
proof masses 18 using electrostatic forces by applying a voltage between drive combs 20 and interdigitated comb teeth ofproof masses 18. Motor pickoff combs 22 monitor the excitation or oscillation ofproof masses 18 by monitoring voltage signals on electrodes onproof masses 18. Motor pickoff combs 22 output a feedback signal to feedback monitors 32. Feedback monitor 32 provides anoutput 34 which is input to driveelectronics 36. Ifproof masses 18 begin to oscillate too fast or too slow,drive electronics 36 may adjust an oscillation frequency such thatproof masses 18 vibrate at a resonant frequency. Excitation at such a frequency may enable a higher amplitude output signal to be generated. Herein,pre-amplifier 26,sense electronics 28, feedback monitor 32, and driveelectronics 36, may be referred to collectively as gyroscope electronics. - As illustrated in the Figure and described above, electrical connections are to be made between gyroscope electronics and sealed
cavity 16 ofTFG 14. Making such connections while maintaining a seal forcavity 16 has been shown to be difficult, as illustrated and described with respect to Figures 2 and 3. - Figure 2 is a cross-sectional view illustrating one known method for bonding silicon to a glass substrate in order to form a hermetically sealed
cavity 50. Aglass substrate 52 includes bonding surfaces 54 to which asealing ring 56 also having bonding surfaces 58 is anodically bonded. Sealingring 56 is, in the embodiment shown, a continuous seal ring that completely surrounds, but is not connected to, asecond silicon structure 60. In one embodiment, sealingring 56 is made of silicon.Silicon structure 60, for example, could be a vibrating sensor, including, but not limited to, tuning fork gyroscope 14 (shown in Figure 1). Asecond glass substrate 62 having abonding surface 64 is subsequently bonded to abonding surface 66 of sealingring 56, but notsecond silicon structure 60, thereby formingcavity 50. In an alternative embodiment, sealingring 56 is first bonded tosecond glass substrate 62. While referred to as a ring, sealingring 56 is understood to include any and all shapes which could be utilized to form a cavity as needed for specific applications. - Figure 3 illustrates the structure described with respect to Figure 2, but with an addition of an
electrical lead 70 from withincavity 50 to a position outside ofcavity 50. Components in Figure 3 common with those in Figure 2 are identified using the same reference numbers. Anelectrical lead 70 is placed onglass substrate 52 to provide an electrical connection betweensilicon structure 60 and a circuit (not shown) outside ofcavity 50. Although asingle lead 70 is shown, it is understood that embodiments exist where multiple leads 70 are needed betweensilicon structure 60 and the circuit outside ofcavity 50, for example between a tuning fork gyroscope 14 (shown in Figure 1) and gyroscope electronics. Figure 3 further illustrates that when electrical leads 70 are utilized, at least a portion of bonding surfaces 54 ofglass substrate 52 and at least a portion of bonding surfaces 58 of sealingring 56 no longer make contact. Further, since bonding surfaces 54 and 58 are substantially flat, areas ofbonding surface 58 exist which do not make contact withbonding surface 54, making it difficult to maintain hermetically sealedcavity 50. In other words, routingelectrical leads 70 between bonding surfaces 54 and 58 can cause the hermetic seal to be compromised, as portions of bonding surfaces 54 and 58 are separated from one another due to the presence of electrical leads 70. - Figure 4 illustrates an improved structure for passing an electrical signal into a hermetically sealed cavity formed at least in part through a silicon-glass MEMS process. The embodiment illustrated in Figure 4 utilizes a modified
glass substrate 80 where at least onerecess 82 is formed intoglass substrate 80 where it is desired to pass an electrical signal into hermetically sealedcavity 84. Anelectrical lead 86 is formed withinrecess 82 and extending on anupper surface 88 ofsubstrate 80. In one embodiment,electrical lead 86 is conductive and fabricated from metal. -
Lead 86 is constructed such that extendingportions 88 extend intocavity 84 and to an area outside where sealingring 90 is to be placed, for connection to an electrical circuit. In one embodiment, sealingring 90 is made from silicon. A glass deposit 92 is placed withinrecess 82 and on top oflead 86 according to methods described further with respect to Figure 5. Glass deposit 92 provides abonding surface 94 for sealingring 90. The described embodiment therefore solves the sealing problems described above, by essentially creating an electrical path underneath a surface ofglass substrate 80. Further, a substantiallyflat surface 94 is provided for bonding with a surface 96 of sealingring 90 and creating a hermetic seal forcavity 84, which may be necessary for operation ofsilicon structure 98. - It should be noted that the structure described in Figure 4 may be fabricated in multiple ways. For example,
silicon structure 98 may be fabricated from a silicon wafer (not shown) that is disposed uponglass substrate 80, while sealingring 90 is fabricated from a silicon wafer (not shown) that is disposed onsecond glass substrate 62. By placingsecond glass substrate 62, with sealingring 90, onto glass substrate 80 (and glass deposits 92 in relevant locations, the sealedcavity 84 is formed. Alternatively, sealingring 90 may be formed onglass substrate 80 whilesilicon structure 98 is formed onsecond glass substrate 62. Also, sealingring 90 andsilicon structure 98 can be formed from a single silicon wafer (not shown) that is disposed on eitherglass substrate 80 orsecond glass substrate 62. Whichever method is utilized, the result is that at least a portion of sealing ring is fabricated to form a seal with glass deposit 92 and a portion of sealingring 90 is fabricated to form a seal with a portion ofglass substrate 80. - Figure 5 illustrates a process for providing electrical signals into a cavity, while maintaining a hermetic seal around the cavity, similar to the structure illustrated in Figure 4. Referring to Figure 5A, a
glass substrate 100 has at least onerecess 102 formed on asurface 104 ofsubstrate 100. In specific embodiments, recesses 102 are etched inglass substrate 100 everywhere that an electrical feedthrough for an electrical signal is needed. As shown in Figure 5B, conductive leads 106 are deposited and patterned in and around recesses 102. Figure 5C illustrates aglass layer 108 that has been deposited over theentire surface 104 ofsubstrate 100.Glass layer 108 covers bothrecesses 102 and conductive leads 106. - Referring to Figure 5D,
glass layer 108 is then planarized, utilizing chemical-mechanical polishing or other techniques, to a level where afirst contact 110 and asecond contact 112 ofleads 106 are exposed. This process leaves aconductive lead 106 withinrecess 102, which is substantially covered byglass layer 108 and providing asurface 114 that is essentially planar with a surroundingglass surface 116. In another embodiment,glass layer 108 is planarized to a first level, then the planarized glass layer is etched to a level wherefirst contact 110 andsecond contact 112 ofleads 106 are exposed. - As shown in Figure 5E,
electrical contacts 118, for example, to electrical circuits (not shown) can be attached tofirst contact 110 andsecond contact 112 ofelectrical leads 106 since they are now exposed. Referring to Figure 5F, asilicon wafer 120 is then bonded to planarized substrate surfaces 114 and 116 (bonding to surface 116 not shown) such thatelectrical leads 106 go undersilicon wafer 120, but do not cause a loss of a hermetic seal betweensilicon wafer 120 and glass substrate 100 (glass layer 108). Electrical leads 106 are functionally and structurally equivalent to electrical leads 86 (shown in Figure 4). - Figure 6 is a schematic illustration of a
MEMS gyroscope 130 which utilizeselectrical feedthroughs 132 from a hermetically sealedcavity 134. Hermetically sealedcavity 134 provides an operating environment for tuning fork gyroscope (TFG) 136.Electrical feedthroughs 132 are provided through utilization of electrical leads 86 (shown in Figure 4).TFG 136 for the purposes herein may be considered to be one embodiment of silicon structure 98 (shown in Figure 4). Substantially sealedcavity 134 provides separation between sensitive elements ofTFG 136 and drive electronics.Pre-amplifier 26 andTFG 136, feedback monitor 32 andTFG 136, and driveelectronics 36 andTFG 136 may be electrically connected utilizing electrical leads 86. In other configurations, similar to those described with respect to Figure 1, electrical leads 86 provide the electrical connections betweenTFG 136 and gyroscope electronics. - Figure 7 illustrates an
alternative structure 150 for providing a hermetically sealedcavity 152 utilizing a silicon-glass MEMS process. Instructure 150, rather than a sealing ring and a second glass substrate (as shown in Figure 4), asilicon device 154 with arecess 156 formed therein is utilized to formcavity 152. Toform cavity 152, aglass substrate 158 is bonded tosilicon device 154. - To provide an electrical path underneath a surface of
glass substrate 158,glass substrate 158 includes arecess 160 formed intoglass substrate 158 where it is desired to pass an electrical signal into hermetically sealedcavity 152. Anelectrical lead 162, in one embodiment a conductive lead, is formed withinrecess 160 and extends onto anupper surface 164 ofsubstrate 158. Aglass deposit 166 is placed withinrecess 160 and on top of lead 168 utilizing the processes described above.Glass deposit 166 provides abonding surface 170 for bonding withbonding surface 172 ofsilicon structure 154, and therefore allows construction of hermetically sealedcavity 152. - Figure 8 illustrates an alternative embodiment (in cross-section) of a
structure 200 for providing a hermetically sealedcavity 202 utilizing a silicon-glass MEMS process. Instructure 200, a modifiedglass substrate 204 is utilized in formingcavity 202 along with asealing ring 206 that is, or will be, attached toglass substrate 208. At least onerecess 210 is formed intoglass substrate 204 where it is desired to pass an electrical signal into hermetically sealedcavity 202. Anelectrical lead 212 is formed onrecess 210 and extending to anupper surface 214 ofsubstrate 204, for connection to adevice 216. In one embodiment,electrical lead 212 is conductive and fabricated from metal. In one embodiment, sealingring 206 is made from silicon. -
Lead 212 is constructed such thatportion 218 extends intocavity 202 for connection todevice 216, andportion 220 extends to an area outside of where sealingring 206 is eventually placed, for connection to an electrical circuit (not shown). As anupper surface 222 ofelectrical lead 212 is withinrecess 210,upper surface 222 is below anupper surface 224 ofsubstrate 204, making hermetic sealing with sealing ring difficult. To alleviate such sealing difficulty, a glass deposit 226 is deposited onupper surface 222 ofelectrical lead 212, withinrecess 210. Glass deposit 226 is planarized such that an upper surface 228 is formed which is at a same level asupper surface 224 ofsubstrate 204. Upper surface 228 of glass deposit 226 is eventually bonded to sealingring 206 to form sealedcavity 202, to allow proper operation ofsilicon structure 230. The described embodiment therefore solves the sealing problems described above, by essentially creating an electrical path underneath glass deposit 226. Further, a substantially flat surface (upper surface 228) is provided for bonding with asurface 232 of sealingring 206 and creating a hermetic seal forcavity 202, which may be necessary for operation ofsilicon structure 230. - Although not illustrated, it is contemplated that devices, for example, MEMS pressure sensors, resonators, and temperature sensors, are to be constructed utilizing the structures illustrated in Figures 7 and 8. It is further intended that any differences between the structures of Figures 4, 7, and 8 show only different manufacturing embodiments for MEMS devices. Further, other devices are contemplated which utilize electrical feedthroughs as shown and described with respect to Figures 4, 7, and 8, including, but not limited to, accelerometers, pressure sensing devices, and other MEMS devices.
- The above described embodiments for providing electrical feedthroughs into a substantially sealed cavity are improvements over known methods of sealing such cavities which utilize electrical feedthroughs, The known methods involved attempting to seal over an uneven topology which included both electrical feedthroughs and a glass surface, as described with respect to Figure 3, The result has been unbonded areas which break the hermetic seal, due to the uneven surface.
- The above described embodiments provide electrical feedthroughs into a hermetically sealed cavity. However, it is contemplated that the methods and structures described herein extend to applications other than those which involve passage of electrical conductors into and out of sealed cavities. For example, the electrical feed throughs described may also be utilized to provide electrical connections between portions of a silicon structure that is fabricated from a patterned silicon wafer. More specific examples would be electrical connections between portions of silicon structure 98 (shown in Figure 4) and between portions of silicon structure 230 (shown in Figure 8). Such methodology extends to providing electrical connections between any electrical components that can be disposed or mounted on glass substrates.
- The herein described methods involve utilization of feedthroughs which are essentially embedded underneath a smooth glass surface, allowing a much better seal between silicon and glass.
Claims (6)
- A method for providing conductive paths into a hermetically sealed cavity (84), the sealed cavity formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process, said method comprising:forming recesses (82) on a glass substrate (80) where conductive paths are to pass into the cavity;forming conductive leads (86) in and around the recesses;depositing a glass layer (92) over the substrate, into the recesses, and over the conductive leads;planarizing the deposited glass layer to a level of the conductive leads to expose portions of the conductive leads;forming a sealing surface (94) on at least a portion of the glass layer; andbonding silicon to the sealing surface of the planarized glass layer, the silicon positioned such that a portion (88) of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.
- A method according to claim 1, wherein bonding silicon to the planarized glass layer (92) comprises:bonding a sealing ring (90) to the planarized glass layer; andbonding the sealing ring to a second glass substrate (208).
- A method according to claim 1, wherein planarizing the deposited glass layer (108) to a level of the conductive leads (86) further comprises:planarizing the deposited glass layer to expose a first contact (110) and a second contact (112) for each lead; andattaching electrical contacts (118) to the first contact and second contact of each lead.
- A method according to claim 1, wherein bonding silicon to the planarized glass layer comprises bonding silicon (154) to the planarized glass layer (166), the silicon configured to form the cavity (156).
- A structure having a hermetically sealed cavity (84) therein, said structure having at least one electrically conductive path passing from outside of the sealed cavity to inside the sealed cavity, said structure comprising:a glass substrate (80) comprising recesses (82) where electrical signals are to pass into the sealed cavity;conductive leads (86) deposited in and around said recesses;a glass layer (92) deposited over said substrate, said glass layer further deposited over said recesses and said conductive leads, said glass layer planarized to a level of a portion (88) of said conductive leads around said recesses; andsilicon (154), bonded to said planarized glass layer to form a cavity, said silicon fabricated such that a portion of each said conductive lead is within the sealed cavity and a portion of each said conductive lead is outside the sealed cavity.
- A structure according to claim 5, wherein said silicon comprises a sealing ring (90) bonded to said planarized glass layer, said sealing ring configured to be bonded to a second glass substrate (208).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US10/385,181 US6888233B2 (en) | 2003-03-10 | 2003-03-10 | Systems for buried electrical feedthroughs in a glass-silicon MEMS process |
US385181 | 2003-03-10 | ||
PCT/US2004/007277 WO2004080888A1 (en) | 2003-03-10 | 2004-03-10 | System and method for buried electrical feedthroughs in a glass-silicon mems process |
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EP1601611B1 true EP1601611B1 (en) | 2007-04-25 |
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EP04719227A Expired - Lifetime EP1601611B1 (en) | 2003-03-10 | 2004-03-10 | System and method for buried electrical feedthroughs in a glass-silicon mems process |
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US (2) | US6888233B2 (en) |
EP (1) | EP1601611B1 (en) |
JP (1) | JP2006519707A (en) |
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AT (1) | ATE360598T1 (en) |
AU (1) | AU2004220026A1 (en) |
DE (1) | DE602004006094T2 (en) |
WO (1) | WO2004080888A1 (en) |
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-
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- 2004-03-10 EP EP04719227A patent/EP1601611B1/en not_active Expired - Lifetime
- 2004-03-10 JP JP2006507029A patent/JP2006519707A/en active Pending
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- 2004-03-10 AT AT04719227T patent/ATE360598T1/en not_active IP Right Cessation
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CN101279713B (en) * | 2008-03-31 | 2011-09-14 | 清华大学 | Manufacturing method for floating type micro-silicon electrostatic gyro/accelerometer sensitive structure |
CN108692740A (en) * | 2018-03-28 | 2018-10-23 | 中北大学 | Silicon micro-cup shape resonant gyroscope processing method based on high-aspect-ratio deep silicon etching method |
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DE602004006094D1 (en) | 2007-06-06 |
US6924165B2 (en) | 2005-08-02 |
US20040180464A1 (en) | 2004-09-16 |
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WO2004080888A1 (en) | 2004-09-23 |
JP2006519707A (en) | 2006-08-31 |
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KR20050109551A (en) | 2005-11-21 |
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