EP1599764A2

EP1599764A2 - Method for producing resist substrates

Info

Publication number: EP1599764A2
Application number: EP04713886A
Authority: EP
Inventors: Wittich Kaule
Original assignee: Giesecke and Devrient GmbH
Current assignee: Giesecke and Devrient GmbH
Priority date: 2003-02-26
Filing date: 2004-02-24
Publication date: 2005-11-30
Also published as: WO2004077161A2; AU2004214638B2; CN1754128A; WO2004077161A3; US7655381B2; DE10308317A1; US20060257583A1; CN1754128B; AU2004214638A1; RU2005129551A; RU2334261C2

Abstract

The invention relates to a method for producing a substrate provided with a resist layer in the form of a relief structure comprising a diffraction structure. Said resist layer interacts with at least areas provided with a conductive layer which diffuses primary electrons and/or produces secondary electrons when the resist layer is exposed to an electron beam effect. For the inventive method, the material of the resist and conductive layers and exposition parameters are co-ordinated therebetween in such a way that the resist layer is also exposed outside the area exposed to the electron beam in such a way that the lateral parts of the relief structure hold an inclined shape.

Description

Process for producing a resist substrate

The invention relates to a method for producing a substrate having a resist layer in the form of a relief structure, which represents a diffraction structure, wherein the substrate has a conductive layer which scatters the primary electrons when exposing the resist layer by means of an electron beam and / or generates secondary electrons.

The invention further relates to a resist master and a resist substrate.

Optically variable elements which have optical properties varying with the viewing angle are frequently used as counterfeit or copy protection for value documents, such as credit cards, bank notes or the like, but also for product protection on any product packages. The optically variable elements have the diffraction structure of a true hologram, computer hologram or the diffraction structure of a lattice image with lattice fields arranged next to one another. Generally speaking, a hologram is a superposition of diffraction gratings. In contrast, a grating image is composed of a multiplicity of grid fields arranged side by side, each of which has a uniform diffraction grating. The diffraction gratings of the different grating fields may differ with regard to the grating constant or the azimuth angle or the contour or the outline of the image area occupied by the respective diffraction grating. The lattice constant corresponds to the spacing of the grid lines and is essential for the color of the respective image region in the lattice image which can be recognized at a certain viewing angle. The azimuth angle describes the inclination of the grid lines with respect to a reference direction and is responsible for the visibility of the image areas in certain viewing directions. On the basis of this technique, optically varia- ble elements, z. As moving images or even plastically-acting images are generated.

For the mass production of the optically variable elements, it is customary to produce so-called "master structures" which have the respective phase information of the optically variable element in the form of a spatial relief structure, which is usually a glass, plastic, metal or semiconductor substrate Based on this master structure, by embossing and removing the relief structure, arbitrarily shaped embossing tools can be produced, with the aid of which the diffraction structures represented by the relief structure can be enlarged in size The relief structures can be generated either by holographic exposure or by electron beam lithography.

In the context of electron beam lithography, an electron beam sensitive, so-called e-beam resist layer with an electron beam is described.

The term "resist" is to be understood in this context as a radiation-sensitive lacquer, whereby the term "photoresist" refers to photosensitivity and the term "e-beam resist" to sensitivity to the exposure to an electron beam, although resist types are also known , which are sensitive to both electromagnetic radiation, in particular light, as well as for the irradiation with electrons. Chemically, the resist is a film-forming material whose solubility behavior changes under light or particle radiation.

"Positive resist" refers to resist materials which readily become soluble under irradiation by degradation or conversion of functional groups

Areas are dissolved away, the unirradiated areas, however, remain standing.

Resist materials are referred to as "negative resist", which become sparingly soluble or insoluble under irradiation by crosslinking or polymerization, as a result of which the unexposed areas are dissolved away during further treatment, while the irradiated areas remain stationary.

While in the usual applications of electron beam lithography in the context of microelectronics and micromechanics sharp boundaries of the writing field of the electron beam asked and at right angles to the substrate surface extending flanks of the relief structure are the goal, the relief structures that represent the diffraction structure of an optically variable element in the Generally have flat sloping edges or flanks with a defined slope.

In order to produce gently sloping flanks of the relief structure, various methods are known:

On the one hand, it is known to expose several adjacent tracks along a designated flank with a different dose of radiation. Depending on the intensity of the radiation dose, the resist material is applied to a True depth exposed, so that after development results in a relief structure with flat edges.

Furthermore, it is known to apply a plurality of photoresist layers of different sensitivity one above the other and to expose them in several passes with different masks. In this procedure, step-shaped flanks that form approximately a flat flank of the relief structure result.

These known methods are time-consuming and require special types of resist, which are tuned to the flank problem and are also not optimal in their other properties. Both the multiple exposing to forming a flank and working with different types of resists considerably increases the processing times. In particular, it is necessary to work with relatively insensitive resist materials.

Based on this prior art, the invention is based on the abe to specify a method by which a relief structure with flat flanks or flanks can be produced in a simple manner for electron beam lithography, in particular for generating hologram-like structures in a resist layer , Furthermore, the invention has for its object to provide a suitable for carrying out the process resist substrate and a resist master for stamping tools.

These objects are achieved by the method and the resist substrate and the resist master having the features of the independent claims. Further embodiments and details are the subject of the dependent claims. Since the resist layer itself is generally nonconductive, electron beam exposure requires an additional conductive layer to dissipate the electrons of the incident electron beam ("primary electrons") In addition, when the primary electrons strike the conductive layer, they are partially scattered and / or generate so-called "secondary electrons" which are knocked out of the conductive layer. The scattered primary electrons and the secondary electrons also propagate in the adjacent resist layer, so that the resist layer is also exposed outside the region directly impacted by the electron beam ("proximity effect"), since the exposure is broadened or blurred in this way, this effect is undesirable and is suppressed as much as possible.

The invention is based on the finding that the range of action of this additional exposure depends on the electron beam energy and the conductive material used and that by appropriate choice of the exposure parameters and the conductive material of the Proximity Eff eective targeted for the generation of inclined flanks, as they are for the Production of Resistmastern are necessary, can be used.

In the method according to the invention, therefore, the material of the resist layer and of the conductive layer and the exposure parameters are matched to one another such that the resist layer is also exposed outside the region exposed to the electron beam so that the flanks of the relief structure receive an inclined form. It is to be considered as an indication that flatter flanks are due to a higher atomic number of the metal contained in the conductive layer, a softer gradation of Resist, a higher acceleration voltage of the electrons and a blurred and larger beam cross-section can be generated.

This method has the advantage that it can be performed in a much shorter time compared to conventional methods for producing a substrate having a resist layer in the form of a relief structure, since only a single exposure step is required. In addition, the exposure time is reduced in addition, since the total effective radiation dose is increased by the secondary electrodes. In addition, a wide range of resist types can be used for the process. The method is thus not dependent on the use of insensitive resist materials as the known methods. The inclination of the flanks of the relief structure also leads to a good release behavior of the embossing lacquer from the embossing molds, which are shaped by the relief structure.

For the conductive layer, metal layers or metal alloy layers of tungsten, gold, palladium, chromium, aluminum or mixtures of these metals are preferably used because of their good processability. High scattering and secondary electron emission is achieved, for example, with tungsten, gold or a gold-palladium alloy. Since the proximity effect is greater, the higher the atomic number of the chemical elements used, the use of metals with high atomic numbers, in particular greater than 50, is preferred.

The conductive layer may form the carrier substrate for the resist layer or may be applied as a separate layer. In some embodiments, it may also be necessary to remove the conductive layer after the electron beam exposure again. For this purpose, appropriate solvents are used. The electron beam exposure is carried out with Elek- tronenstahlenergie from 0.1 to 100 keV, preferably in the range of 1 to 50 keV

According to a first embodiment, the conductive layer is disposed between the resist layer and the substrate. As the resist layer, a negative resist is used, so that resist areas which are adjacent to the conductive layer and adjacent to the directly exposed area are also exposed by the backscattering of the primary electrons and the secondary electron emission. When developing the negative resist, the unexposed areas are removed and only the areas directly exposed to the electron beam and by the proximity effect remain on the substrate.

According to a second embodiment, a positive resist is used, which on a surface facing away from the substrate with the conductive

Layer is provided. Here, by forward scattering of the primary electrons and by secondary electron emission, the resist areas adjacent to the conductive layer and located outside the directly exposed area are also exposed. During development, the exposed areas are loosened and only the unexposed areas, which are exposed neither directly nor by the proximity effect, remain on the substrate.

According to a further embodiment of the method, the electron beam exposure can be combined with an optical exposure in the form of electromagnetic radiation.

In such an embodiment, for example, a positive resist is applied to the substrate, which can be exposed to both electromagnetic radiation and an electron beam. First In this method, an optical exposure takes place. The areas provided for exposure to the electron beam are covered during the optical exposure by means of an opaque mask. After the optical exposure, the conductive layer is applied to the not yet developed positive resist. The areas previously covered by an opaque mask are then exposed by means of an electron beam, the forward scattering of the beam electrons and the emission of the secondary electrons from the conductive layer effecting the exposure of the resist beneath the conductive layer and adjacent the area directly exposed to the electron beam. The conductive layer is then removed with a suitable solvent and the positive resist developed.

In a modified embodiment, a negative resist is used. Here, the negative resist in the beam direction before the conductive

Layer arranged. To avoid reflection effects in the optical exposure, a light radiation absorbing layer may be provided between the resist layer and the conductive layer.

In further embodiments, different resist layers may be arranged one behind the other in the beam direction. For example, it is possible to arrange a first resist layer which can be exposed by means of electromagnetic radiation in the beam direction in front of a second resist layer which can be exposed with an electron beam. The conductive layer can then be arranged between the two resist layers or in the beam direction behind the second resist layer which can be exposed with an electron beam.

The different embodiments of the method serve to produce a substrate having a relief-like structured resist layer is provided. The substrate produced by the process according to the invention, the so-called "resist master", is galvanically molded after development and multiplied by known processes in order to produce an embossing stamp, in particular an embossing cylinder such as banknotes, checks, identity cards or the like are also used in the field of product assurance embossed diffractive structure elements are often used.

The invention will be explained by way of example with reference to the accompanying drawings. Show it:

FIGS. 1A and B show the exposure of a negative-resist coated substrate to an electron beam and a cross-section through the substrate after development;

FIGS. 2A to C show a cross section through a substrate provided with a negative resist, which is exposed by means of an electron beam with a different dose of radiation;

Figure 3 A to C, the substrate of Figures 2A to C after development.

4 A to C show a cross section through a substrate provided with a positive resist, which is exposed with an electron beam with a different dose;

Figure 5 A to C, the substrate of Figures 4A and C after development. FIGS. 6A to C show successive method steps of a method with a combination of an optical exposure and a further exposure by means of an electron beam;

FIGS. 7A to 7C show successive method steps of another

Method with a combination of an optical exposure and a further exposure by means of an electron beam;

8A to E successive Nerfahrens steps of a method in which two on each substrate for optical exposure and exposure provided with an electron beam resist layers are applied; and

FIG. 9 shows a modified embodiment of a resist substrate;

FIG. 10 embodiment in which the conductive layer is applied to a separate carrier.

FIG. 1A shows a cross section of a substrate 1 onto which a conductive layer 2 made of a conductive material is applied. The conductive layer 2 may be made of, for example, a metal or a metal alloy or a conductive polymer. Above the conductive layer 2 is a resist layer 3 made of a negative resist. Since the negative resist 3 is generally not conductive itself, the conductive layer 2 serves to dissipate the electrons striking an electron beam 4. The conductive layer 2 can be dispensed with if the substrate 1 itself is sufficiently conductive. Since the conductive layer 2 scatters the primary electrons impinging with the electron beam 4 and secondary electrons are additionally emitted by the conductive layer 2, an exposure region 6 forms around a target area 5 impinged by the electron beam 4, through which an area of the negative adjacent to the target area 5 Resist 3 is exposed. The extent of the exposure area 6 is determined by the materials used, the electron acceleration voltage and by the beam dose, which in turn depends on the intensity and the writing speed of the electron beam 4.

This scattering of the primary electrons and the emission of the secondary electrons are referred to as the proximity effect. The proximity effect is all the more pronounced the higher the atomic number of the material used for the conductive layer 2. In order to obtain a large rate in the scattering of the primary electrons and the emission of the secondary electrons, preferably metals with a high atomic number, for. As tungsten or gold used. Particularly suitable is a gold-palladium alloy, which leads to more uniform conductive layers 2 as pure gold. In addition, chromium or aluminum are also suitable as elements for the conductive layer 2.

According to the invention, it is crucial that the conductive layer, the resist and the beam data are matched to one another in such a way that, due to proximity effects, exposure takes place to the desired extent in the area adjacent to the incident beam.

After developing the negative resist 3 results in a relief profile 7, which is shown in Figure 1B in cross section. The relief profile 7 has a slope angle 8, which is significantly smaller than 90 °. Erfindungsge- In principle, all flank angles of less than 90 ° can be produced, and angles between approximately 30 ° and 89 ° are preferred.

If extended diffraction structures are to be formed in the negative resist 3, the procedure is, for example, as follows:

As the substrate 1, a quartz plate having a thickness of about 2 mm is used. An approximately 80 nm thick, serving as a conductive layer 2 AuPd layer is vapor-deposited on this. On the conductive layer 2, the negative resist 3 is spun from an e-beam negative resist material with 250 nm thickness ("spin coating") and cured ("bake"). The exposure of the negative resist 3 is effected by means of the electron beam 4 whose electrons have been accelerated to 5 keV. The electron beam 4 is guided along the lines provided for the diffraction grating and exposes the resist layer 3 in the region of these lines. As a result, a diffraction grating is inscribed in the resist layer 3 by the electron beam 4. The diffraction grating generally covers the area of a grid field whose outline or contour is predetermined by the design of the grid image. The distance between the individual tracks of the electron beam 4 is typically 1 micrometer.

FIGS. 2A to 2C show the extent of the exposure areas 6 as a function of the radiation dose. FIG. 2A shows the extent of the exposure area 6 with a low dose of radiation, FIG. 2B with an average dose of radiation and FIG. 2C with a high dose of radiation. The optimal dose of radiation is determined by tests depending on the selected resist material and proximity layer material. FIGS. 3A to 3C show the relief structures 7 which result after the development of the negative resist 3 from FIGS. 2A to 2C. With a small dose of radiation, the relief structure 7 only has individual isolated elevations 9 after development. The mean jet dose shown in FIG. 2B leads to the relief structure 7 shown in FIG. 3B with a nearly sinusoidal cross-sectional profile. On the other hand, an excessively high radiation dose leads to the relief structure 7 shown in FIG. 3C, in which case the developed negative resist layer 3 has only isolated recesses 10.

The relief structure 7 according to FIG. 3B is particularly advantageous since the embossing tools shaped by this relief structure exhibit the best detachment behavior during embossing and because the embossed material has a high degree of brilliance in a wide viewing angle range as a diffraction grating.

The method can also be carried out with a positive resist. Such an embodiment is shown in Figs. 4A to 4C. In this embodiment, an approximately 2 mm thick quartz glass plate is used as the substrate 1. On the substrate 1, a positive resist 11 made of E-beam positive resist material of 250 nm thickness is applied and cured. On the positive resist 11, an approximately 40 nm thick conductive layer 12 is vapor-deposited. The exposure takes place with the aid of the electron beam 4, whose electrons have been accelerated to an energy of 5 keV. The writing operation takes place as in the embodiment shown in FIGS. 2A to 2C and FIGS. 3A to 3C. The grid lines are typically written at a distance of about 1 μm. Due to the forward scattering of the primary electrons incident on the electron beam 4 and the emission of the secondary electrons in the dissipation layer 12, the exposure region 6 also comes in the region of the positive Resist layer 11 to lie. The beam dose determined by current intensity and writing speed of the electron beam 4 is again optimized in experiments.

The conductive layer 12 may need to be removed after exposure. For this purpose, suitable solvents are known to those skilled in the art. For gold, for example, the TFA type gold etching solution from Transene Co., Rowel Ma is suitable. An etching solution suitable for chromium is an etching solution of the type TR-14 of Cyantek Corp., 3055 Osgood Ct., Fermont CA 94548.

FIGS. 5A to 5C show the cross-sectional profile of the positive resist layer 11 after development. The cross-sectional profile of the positive resist layer shown in Fig. 5A is the result of the small dose of radiation of the electron beam 4 of Fig. 4A. Similarly, the cross-sectional profiles of the positive resist layer 11 shown in FIGS. 5B and 5C result due to the radiation dose of the electron beam 4 shown in FIGS. 4B and 4C. With a small dose of radiation, the exposure region extends only slightly beyond the surface of the positive resist layer 11 into the positive resist layer 11. Accordingly, after the form

Only develop individual isolated recesses 13 in the surface of the positive resist layer 11. On the other hand, with a medium dose of radiation, the positive resist layer 11 exhibits a nearly sinusoidal profile after development, which is particularly desirable, since the embossing lacquer easily separates from the embossing patterns produced by the positive resist 11 and the finished variable optical elements over a wide viewing angle range have high optical brilliance. If the jet dose is chosen too high, the isolated elevations 14 shown in FIG. 5C result. It should be noted that after exposure to the electron beam 4 and prior to the development of the positive resist 11, the drainage layer 12 must be dissolved by means of a suitable etching solution.

The dissolution of the dissipation layer 12 can be avoided if the dissipation layer 12 is arranged on a separate foil 40, as shown in FIG. The film 40 or the dissipation layer 12 is brought into close contact with the resist layer during the exposure and can then be easily removed by removal.

The exposure of a resist layer using the proximity effect described here can also be used in processes in which an optical exposure is combined with exposure by an electron beam. FIGS. 6A to 6C show successive method steps of such a method.

In the method illustrated in FIGS. 6A to 6C, an approximately 250 nm thick positive resist 15 is first applied, which can be exposed both to blue light and to an electron beam. Such a positive resist is, for example, the resist material AZ 5206 from Hoechst.

According to FIG. 6A, a holographic exposure is then effected by superimposing spatially extended, uniformly coherent wave fields 16 in the positive resist 15. During holographic exposure, the areas of the positive resist 15 to be later exposed to the electron beam 4 are masked by means of an opaque mask 17 located on the underside of a transparent film 18. The technique of holographic exposure as such is known to those skilled in the art. The holographic exposure generates in the positive resist 15 latent grid structures with sinusoidal profile, which are shown in Figures 6 A and 6B respectively by a dashed line. After the holographic exposure, the as yet undeveloped positive resist 15 is vapor-deposited with a preferably 20 to 100 nm thick dissipation layer 19 made of gold. The regions of the positive resist 15 covered with the mask 17 during the holographic exposure are subsequently exposed using the electron beam 4 according to FIG. 6B. The exposure using the electron beam 4 can take place such that to be filled by a contour or an outline limited grating fields ^~ a grating image having different diffraction gratings. Due to the scattering of the primary electrons and the emission of the secondary electrons in the conductive layer 19, the exposure regions 6 extend so far into the positive resist layer 19 that after development, the grating lines written by the electron beam 4 also receive the sine profile shown in FIG. 6C. However, before the development of the positive resist layer 15, the drain layer 19 must be removed by using an etching solution.

For a method combining an optical exposure with an electron beam exposure, a negative resist can also be selected. FIGS. 7A to 7C show method steps of such a method.

In this method, a dissipation layer 20, which is covered with an antireflection layer 21, is applied to the substrate 1. On the antireflection layer 21, a negative resist 22 is applied, which can be exposed both with blue light and with an electron beam. During the holographic exposure by means of spatially extended, uniformly coherent wave fields 16, the exposure time for the exposure to light is tronenstrahl 4 provided region of the negative resist layer 22 covered by the mask 17. This process step is shown in FIG. 7A. During the holographic exposure, the antireflection layer 21 serves to prevent reflections on the metallic dissipation layer 20, which could disturb the superposition of the wave fields 16 in the region of the negative resist 22. The result of the holographic exposure is the latent diffraction grating drawn in dashed lines in FIGS. 7A and 7B.

Even before the development of the negative resist 22, the substrate according to FIG. 7B is exposed to the electron beam 4, the backscattered primary electrons and the emission of the secondary electrons causing the exposure area 6 to extend into the negative resist 22. With a suitable choice of the exposure parameters of the electron beam 4, the grid lines shown in cross section in FIG. 7C with a sinusoidal grating profile result.

The combined methods illustrated in FIGS. 6 and 7 are used in particular when an image is to be produced with a motif arranged in front of a background. The background can be generated with the holographic exposure while the grids of the subject are formed by the electron beam 4.

Of course, the electron beam recording method according to the present invention may be combined with any other exposure and recording methods. This applies to all described embodiments. The embodiment of a combined method illustrated in FIGS. 6A to 6C offers the advantage that the positive resist generally has greater sensitivity than a negative resist. For this, in the embodiment illustrated in FIGS. 6A to 6C, the conductive layer must be removed prior to development. This method step is omitted in the embodiment of a combined method with a negative resist illustrated in FIGS. 7A to 7C.

It should be noted that the negative resist 22 or the positive resist 15 need not be made of a uniform resist material. It is also conceivable to provide for the positive resist 15 and the negative resist 22 regions of different resist materials, which may also have different thickness.

In addition, it is also possible to arrange different types of resist layers on top of each other. FIGS. 8A to 8E show an exemplary embodiment of a method in which a conductive layer 23 is first applied to the substrate 1. Above the conductive layer 23 is a negative resist 24, which is largely insensitive to optical radiation. In addition, the negative resist 24 is darkened, so that optical radiation is absorbed into the negative resist 24. However, the negative resist 24 is suitable for exposure to the electron beam 4. The negative resist 24 has a desired layer thickness of, for example, 200 nm for electron beam exposure. Above the negative resist 24, a 400 nm thick positive resist 25 is applied, which has a high sensitivity for optical radiation. The substrate shown in Fig. 8 A is thus ready for exposure. The order of the following exposure steps is arbitrary. In the embodiment shown, the optical exposure is started. An area provided for the optical exposure is holographically exposed to electromagnetic radiation 16, eg a laser. The area 26 thus exposed contains the latent diffraction grating, which is indicated by a dashed sine curve in FIG. 8B. The negative resist 24 lying in the area 26 is not damaged because of its optical insensitivity and serves as an absorption layer in order to avoid undesired light spots. The area 26 which is optically exposed in this way is now covered by a mask 27 and an area 28 provided for the electron beam exposure is first preexposed with blue light 29 over the whole area in order to render the positive resist 25 in the area 28 detachable. The action of the blue light 29 has egen the light resistance of the negative resist 24 no effect on lying in the area 28 negative resist 24th

After the exposure with the blue light 29, as shown in FIG. 8D, the exposure to the electron beam 4 takes place. The backscattered primary electrons and the emission of the secondary electrons expose the negative resist 24 to the desired diffraction grating. The damage caused by the electron beam 4 in the positive resist 25 is irrelevant since the positive resist 25 in the region 28 is ultimately removed. The exposure is hereby completed.

During development, the latent images of mountain and landscape emerge

Valley profiles, which are shown in Fig. 8E in cross section. A holographic image is now present in the region 26, and in the region 28 the negative resist 24 forms a diffraction grating with a sinusoidal cross-sectional profile. Fig. 9 shows a modified layer structure, which however is treated the same as the layer structure of Fig. 8A. In the modified layer structure, a positive resist 30 is applied to the substrate 1, which is covered with a conductive layer 31. Above is a positive or negative resist 32 which is sensitive to optical light. Between the resist layer 32 and the conductive layer 31, an antireflection layer 33 is disposed. Also with this structure, a relief structure as shown in FIG. 8E can be produced by exposing the resist layer 32 by means of electromagnetic radiation and the resist layer 30 by means of the electron beam 4.

The relief structures 7 produced by exposure and development can be processed as resist masters in the usual way as in optical holography. In the following, therefore, a thin layer of silver is applied by vapor deposition or chemical precipitation, and a nickel impression is taken in the ceramic bath. The Nickelabf orm may be duplicated and used as an embossing stamp for embossing a Prägeschicht. The embossed layer is finally transferred to the final substrate, for example a banknote, credit card or packaging material, with or without a shiny metallic reflective background layer.

Finally, it should be noted that the drawings are not drawn to scale. Rather, the drawings are only to illustrate the principle of the embodiments described herein.

Claims

Patent claims

1. A method for producing a substrate (1) having a resist layer (3, 11, 15, 22-25, 30-32) in the form of a relief structure (7), which represents a diffraction structure, wherein the resist layer at least partially a conductive Layer (2, 12, 19, 20, 23, 31) adjoins the scattering of the resist layer (3, 11, 15, 22-25, 30-32) by means of an electron beam (4) the primary electrons and / or generates secondary electrons , characterized in that the material of the resist layer (3, 11, 15, 22-25, 30-32) and the conductive layer (2, 12, 19, 20, 23, 31) and the exposure parameters are matched to one another in such a way in that the resist layer (3, 11, 15, 22-25, 30- 32) is also exposed outside the area (5) impinged by the electron beam (4) in such a way that the flanks of the relief structure (7) have an inclined shape.

2. The method according to claim 1, characterized in that the relief structure (7) with a flank inclination angle (8) is made smaller 89 °.

3. The method according to claim 1 or 2, characterized in that the conductive layer (2, 12, 19, 20, 23, 31) is made of a material containing at least one metallic element with an atomic number greater than 50.

4. The method according to at least one of claims 1 to 3, characterized in that the conductive layer (2, 12, 19, 20, 23, 31) at least one of the elements tungsten, gold, palladium, chromium, aluminum or alloys of these elements ,

5. The method according to claim 1, wherein the conductive layer is arranged between the resist layer and the substrate.

6. The method according to claim 5, characterized in that between the conductive layer (20) and the resist layer (22) an optical anti-reflection xionsschicht (21) is arranged.

7. The method according to claim 5 or 6, characterized in that the resist layer (3, 22, 24) is made of a negative resist.

8. The method according to at least one of claims 5 to 7, characterized in that on the resist layer (24) a further sensitive to electromagnetic radiation resist layer (25) is applied.

9. The method according to at least one of claims 1 to 4, characterized in that the conductive layer (12, 19, 31) in the beam direction in front of the resist layer (11, 15, 30) is arranged.

10. The method according to claim 9, characterized in that the resist layer (11, 15, 30) is made of a positive resist.

11. The method according to claim 9 or 10, characterized in that above the resist layer (11, 15, 30), a further resist layer is arranged.

12. The method according to at least one of claims 1 to 4, characterized in that the substrate is the conductive layer.

13. The method according to at least one of claims 1 to 11, characterized in that the conductive layer is disposed on a separate sheet.

14. The method according to claim 1, wherein a resist material which is sensitive to the exposure to electromagnetic radiation and the exposure to the electron beam is used for the resist layer (15, 22), and in that a part the resist layer (15, 22) is exposed to electromagnetic radiation using a mask (17).

15. The method according to claim 8 or 11, characterized in that a part of the further resist layer (25, 32) with electromagnetic radiation and in the beam direction behind the further resist layer (25, 32) located

15 resist layer (24, 30) is exposed to the electron beam (4).

16. The method according to claim 14 or 15, characterized in that in the exposed to electromagnetic radiation portion of the resist layer (15, 22) or the further resist layer (25, 32) generates a true hologram

20 becomes.

17. The method according to claim 14 or 15, characterized in that by the exposure to electromagnetic radiation of the resist layer (15, 22) or the further resist layer (25, 32) generates a diffraction grating

25th will be.

1-

18. The method according to any one of claims 1 to 17, characterized in that by the exposure to the electron beam, a diffraction grating in the resist layer (3, 11, 15, 22, 24, 30) is produced.

19. Resistmaster, produced by a process according to at least one of claims 1 to 18.

20. Use of the resist master according to claim 19 for the production of embossing tools, in particular embossing cylinders.

21. Use of the resist master according to claim 19 for the production of security elements.

22. Resistsubstrat which is provided with an E-beam resist layer (3, 11, 15, 22, 24, 30) and a conductive layer, which upon exposure of the resist layer (3, 11, 15, 22, 24, 30) by means of an electron beam (4) which scatters electrons and / or generates secondary electrons, characterized in that the conductive layer has at least one metal with an atomic number greater than or equal to 50.

23. Resistsubstrat according to claim 22, characterized in that the conductive layer (2, 12, 19, 20, 23, 31) at least one of the elements from the group tungsten, gold, palladium, chromium, aluminum or alloys of these elements.

24. The resist substrate according to claim 22, wherein the conductive layer is arranged between the resist layer and the substrate.

25. Resistsubstrat according to claim 24, characterized in that between the conductive layer (20) and the resist layer (22) an optical anti-reflection layer (21) is arranged.

26. Resistsubstrat according to claim 24 or 25, characterized in that the resist layer (3, 22, 24) is made of a negative resist.

27. Resistsubstrat according to at least one of claims 24 to 26, characterized in that on the resist layer (24) a further, sensitive to electromagnetic radiation resist layer (25) is applied.

28. Resistsubstrat according to claim 22 or 23, characterized in that the conductive layer (12, 19, 31) in the beam direction in front of the resist layer (11, 15, 30) is arranged.

29. Resistsubstrat according to claim 28, characterized in that the resist layer (11, 15, 30) is made of a positive resist.

30. Resistsubstrat according to claim 28 or 29, characterized in that above the resist layer (11, 15, 30), a further resist layer is arranged.