EP1599412A1 - Separating semiconductor wafers having exposed micromechanical structures into individual chips - Google Patents

Separating semiconductor wafers having exposed micromechanical structures into individual chips

Info

Publication number
EP1599412A1
EP1599412A1 EP04713843A EP04713843A EP1599412A1 EP 1599412 A1 EP1599412 A1 EP 1599412A1 EP 04713843 A EP04713843 A EP 04713843A EP 04713843 A EP04713843 A EP 04713843A EP 1599412 A1 EP1599412 A1 EP 1599412A1
Authority
EP
European Patent Office
Prior art keywords
saw
chips
semiconductor wafer
micromechanical structures
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP04713843A
Other languages
German (de)
French (fr)
Inventor
Roy Knechtel
Jutta Heller
Gunnar Lindemann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab Semiconductor Foundries GmbH
Original Assignee
X Fab Semiconductor Foundries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab Semiconductor Foundries GmbH filed Critical X Fab Semiconductor Foundries GmbH
Publication of EP1599412A1 publication Critical patent/EP1599412A1/en
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00896—Temporary protection during separation into individual elements

Definitions

  • sawing The separation of chips from the disc assembly by means of cut-off grinding (hereinafter referred to as sawing) is a standard work step in the production of microelectronic components.
  • Commercial systems are predominantly used for this purpose, in which a water jet is directed onto the saw blade.
  • This fulfills two functions: On the one hand, the saw blade is cooled with the water (removal of the frictional heat generated during sawing) to increase its service life, on the other hand, the saw dust is removed by the water jet so that it does not accumulate on the sawn chips and these can contaminate. With this method, high sawing speeds can be achieved.
  • the separated chips are held by a carrier film, on which the semiconductor wafer was mounted before sawing.
  • US-A 2002/0096743 illustrates - instead of a thermo film - a rigid lid which contributes to holding the chip until the end of the process.
  • the purpose of the invention is to simplify the separation process of semiconductor wafers with sensitive micromechanical structures and thus to save costs.
  • the object of the invention is to protect sensitive micromechanical structures from contamination and damage when the semiconductor wafer is separated into chips.
  • thermo film (4) i.e. on the side on which the micromechanical structures are located, is covered before the separation, for which purpose, for example, commercially available foils can be used.
  • the semiconductor wafer is then pulled onto a standard saw foil (2) which is held and tensioned by a saw frame (3), after which the sawing is carried out from the front using a standard saw blade (6). Sawing is carried out through the thermal film.
  • Standard sawing parameters can be used, which enables high sawing speeds and thus short sawing times.
  • the saw cuts are aligned using saw marks (5) on the front of the disc.
  • the thermal film is sufficiently transparent for this.
  • the saw slots (7) thus created separate the disc into chips (8) which are still covered over the entire area with thermal film, ie are protected.
  • FIG. 1 An example from FIG. 1 is used for a more detailed explanation.
  • the wafers are cleaned with water and dried in order to remove sawdust from the foil surfaces and from the saw slots.
  • the entire arrangement is then heated to the envelope temperature of the thermal film, the adhesive strength of which is completely eliminated and the pieces of film stand out independently of the chips due to the internal tensions of the film.
  • the film is removed without leaving any residue and practically without applying any force to the structures to be protected, so that they are neither contaminated nor confirmed.
  • the invention offers the advantage that standard microelectronic operations can be used to pull on the foils and to saw the semiconductor wafers. Furthermore, there is no need to reclamp the chips after sawing. After the thermal film has been removed, there is a standard arrangement that can be processed using standard assembly processes (pick and place).
  • the method can be applied to structures that can be produced with the common technologies of micromechanics:
  • volume micromechanics with free-standing or freely movable structures (9), volume micromechanical membrane structures (10), surface micromechanical structures (12), lowered structures in surface and or bulk micromechanics (11).

Abstract

The inventive method enables chips (1) to be separated without damaging them, which have exposed sensitive micromechanical structures, from the group of wafers by means of standard parting-off grinding processes. During the parting-off grinding process, the micromechanical structures are covered with a thermofilm (4) thereby protecting them. The parting-off grinding, referred to as cutting (6) for short, ensues from the front side of the wafer with the aid of cutting marks (5) on the wafer. During this, the protective film (4) is completely cut through. After cutting, heat is used to detach the protective film from the separated chips (8) without leaving remnants thereon and without force acting upon the micromechanical structures. The separated chips are held by a supporting film onto which the semiconductor wafer is drawn before the cutting step (6). The properties of the supporting film are not modified during the heat treatment of the protective film.

Description

Vereinzeln von Halbleiterscheiben mit freiliegenden mikromechanischen Strukturen zu EinzelchipsSeparation of semiconductor wafers with exposed micromechanical structures to form individual chips
Das Vereinzeln von Chips aus dem Scheibenverband mittels Trennschleifen (im Folgenden als Sägen bezeichnet) ist ein Standardarbeitsschritt bei der Herstellung mikroelektronischer Bauteile. Überwiegend werden dazu kommerziell verfügbare Anlagen eingesetzt, bei denen ein Wasserstrahl auf das Sägeblatt gerichtet ist. Dieser erfüllt zwei Funktionen: Zum einen wird mit dem Wasser das Sägeblatt gekühlt (Abtransport der beim Sägen entstehenden Reibungswärme) um dessen Standzeit zu erhöhen, zum anderen wird der Sägestaub durch den Wasserstrahl abtransportiert, so dass er sich nicht auf den gesägten Chips anlagern und diese verunreinigen kann. Mit dieser Methode können hohe Sägegeschwindigkeiten erreicht werden. Die vereinzelten Chips werden von einer Trägerfolie gehalten, auf welche die Halbleiterscheibe vor dem Sägen aufgezogen wurde.The separation of chips from the disc assembly by means of cut-off grinding (hereinafter referred to as sawing) is a standard work step in the production of microelectronic components. Commercial systems are predominantly used for this purpose, in which a water jet is directed onto the saw blade. This fulfills two functions: On the one hand, the saw blade is cooled with the water (removal of the frictional heat generated during sawing) to increase its service life, on the other hand, the saw dust is removed by the water jet so that it does not accumulate on the sawn chips and these can contaminate. With this method, high sawing speeds can be achieved. The separated chips are held by a carrier film, on which the semiconductor wafer was mounted before sawing.
Dieses Standardsägeverfahren ist jedoch nicht für das Vereinzeln von Chips mit frei liegenden mikromechanischen Strukturen geeignet, da der Wasserstrahl diese mechanisch zerstören würde. Aus diesen Grund werden häufig mikromechanische Strukturen im Scheibenverband, d.h. vor dem Vereinzeln verkappt (Waferbonden). Dabei erhalten die Chips einen Schutzdeckel, der die empfindlichen Bereiche vor mechanischen Einwirkungen schützt, vgl. US-A 2002/0094662. Da dieser Deckel jedoch nach dem Sägen nicht mehr von den Chips entfernt werden kann, ist diese Schutzmethode nicht für alle Anwendungen der Mikrosystemtechnik geeignet. Sehr häufig ist es notwendig, dass die frei liegenden Strukturen nicht abgedeckt sein dürfen, da sie über spezielle Umgehäuse mit der Umwelt Informationen austauschen sollen. Für das Vereinzeln derartiger Chips mit frei liegenden mikromechanischen Strukturen sind bisher keine universell anwendbaren Methoden bekannt. Es existieren sowohl in der Forschung (Abdecken der Strukturen mit Fotolack und dessen Veraschung nach dem Sägen) als auch aus der Industrie (Sägen im Wasserbad) Lösungsansätze, die zwar einen effektiven Schutz der Strukturen ermöglichen, jedoch Verunreinigungen der Chips (Lackreste/Sägestaub) mit sich bringen und deren Funktion und die Lebensdauer beeinträchtigen. Daher sind diese' Methoden nicht für den praktischen Einsatz geeignet.However, this standard sawing method is not suitable for separating chips with exposed micromechanical structures, since the water jet would mechanically destroy them. For this reason, micromechanical structures are often capped in the wafer structure, ie before being separated (wafer bonding). The chips are given a protective cover that protects the sensitive areas from mechanical influences, cf. US-A 2002/0094662. However, since this cover can no longer be removed from the chips after sawing, this protection method is not suitable for all applications in microsystem technology. It is very often necessary that the exposed structures must not be covered, since they are intended to exchange information with the environment via special enclosures. No universally applicable methods have hitherto been known for separating such chips with exposed micromechanical structures. There are solutions in research (covering the structures with photoresist and its ashing after sawing) as well as in industry (sawing in a water bath) that enable effective protection of the structures but also contaminate the chips (paint residues / sawdust) bring themselves and affect their function and life. Therefore, these 'methods are not suitable for practical use.
Die US-A 2002/0096743 veranschaulicht - statt einer Thermofolie - einen in sich steifen Deckel, der bis zum Ende des Verfahrens zum Halten des Chips beiträgt. Es ist Zweck der Erfindung, den Vereinzelungsprozess von Halbleiterscheiben mit empfindlichen mikromechanischen Strukturen einfacher zu gestalten und so Kosten zu sparen.US-A 2002/0096743 illustrates - instead of a thermo film - a rigid lid which contributes to holding the chip until the end of the process. The purpose of the invention is to simplify the separation process of semiconductor wafers with sensitive micromechanical structures and thus to save costs.
Die Aufgabe der Erfindung besteht darin, empfindliche mikromechanische Strukturen bei der Vereinzelung der Halbleiterscheibe zu Chips vor Verunreinigung und Beschädigung zu schützen.The object of the invention is to protect sensitive micromechanical structures from contamination and damage when the semiconductor wafer is separated into chips.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, dass die Halbleiterscheibe mit den mikromechanischen Strukturen (1) zunächst ganzflächig mit einer Thermofolie (4) vorderseitig, d.h. auf der Seite, auf der sich die mikromechanischen Strukturen befinden, vor dem Vereinzeln abgedeckt wird, wozu beispielsweise kommerziell zu beziehende Folien verwendet werden können. Anschließend wird die Halbleiterscheibe auf eine Standardsägefolie (2) aufgezogen, die von einem Sägerahmen (3) gehalten und gespannt wird, wonach das Sägen von der Vorderseite aus unter Verwendung eines Standardsägeblattes (6) erfolgt. Dabei wird durch die Thermofolie hindurch gesägt.This object is achieved according to the invention in that the semiconductor wafer with the micromechanical structures (1) is initially covered over the entire area with a thermo film (4), i.e. on the side on which the micromechanical structures are located, is covered before the separation, for which purpose, for example, commercially available foils can be used. The semiconductor wafer is then pulled onto a standard saw foil (2) which is held and tensioned by a saw frame (3), after which the sawing is carried out from the front using a standard saw blade (6). Sawing is carried out through the thermal film.
Es können Standardsägeparameter verwendet werden, wodurch hohe Sägegeschwindigkeiten und somit kurze Sägezeiten möglich sind.Standard sawing parameters can be used, which enables high sawing speeds and thus short sawing times.
Die Ausrichtung der Sägeschnitte erfolgt anhand von Sägemarken (5) auf der Scheibenvorderseite. Die Thermofolie ist dazu hinreichend transparent. Die so entstehenden Sägeschlitze (7) vereinzeln die Scheibe zu Chips (8) die noch ganzflächig mit Thermofolie bedeckt, d.h. geschützt sind. The saw cuts are aligned using saw marks (5) on the front of the disc. The thermal film is sufficiently transparent for this. The saw slots (7) thus created separate the disc into chips (8) which are still covered over the entire area with thermal film, ie are protected.
Zur näheren Erläuterung dient ein Beispiel der Fig. 1.An example from FIG. 1 is used for a more detailed explanation.
Nach Abschluss des Sägens werden die Wafer mit Wasser gereinigt und getrocknet um Sägestaub von den Folieoberflächen und aus den Sägeschlitzen zu entfernen. Anschließend wird die gesamte Anordnung auf die Umschlagtemperatur der Thermofolie erwärmt, bei deren Klebkraft vollständig aufgehoben wird und sich die Foliestücken aufgrund der inneren Spannungen der Folie selbständig von den Chips abheben. Das Ablösen der Folie erfolgt rückstandsfrei und quasi ohne Krafteinwirkung auf die zu schützenden Strukturen, so dass diese weder verunreinigt noch bestätigt werden.After sawing has been completed, the wafers are cleaned with water and dried in order to remove sawdust from the foil surfaces and from the saw slots. The entire arrangement is then heated to the envelope temperature of the thermal film, the adhesive strength of which is completely eliminated and the pieces of film stand out independently of the chips due to the internal tensions of the film. The film is removed without leaving any residue and practically without applying any force to the structures to be protected, so that they are neither contaminated nor confirmed.
Durch Neigung der Anordnung fallen die Foliestücken von den Chips ab.Due to the inclination of the arrangement, the pieces of film fall off the chips.
Die Erfindung bietet den Vorteil, dass zum Aufziehen der Folien und zum Sägen der Halbleiterscheiben Standardarbeitsgänge der Mikroelektronik verwendet werden können. Des Weiteren ist kein Umspannen der Chips nach dem Sägen notwendig. Nach dem Ablösen der Thermofolie liegt eine Standardanordnung vor, die mit Standard Assembly-Prozessen (pick and place) verarbeitet werden kann.The invention offers the advantage that standard microelectronic operations can be used to pull on the foils and to saw the semiconductor wafers. Furthermore, there is no need to reclamp the chips after sawing. After the thermal film has been removed, there is a standard arrangement that can be processed using standard assembly processes (pick and place).
Das Verfahren ist anwendbar auf Strukturen, die mit den gängigen Technologien der Mikromechanik hergestellt werden können:The method can be applied to structures that can be produced with the common technologies of micromechanics:
Volumenmikromechanik mit freistehenden oder frei beweglichen Strukturen (9), volumenmikromechanische Membranstrukturen (10), oberflächenmikromechanische Strukturen (12), abgesenkete Strukturen in Oberflächen- und oder Bulk-Mikromechanik (11). Volume micromechanics with free-standing or freely movable structures (9), volume micromechanical membrane structures (10), surface micromechanical structures (12), lowered structures in surface and or bulk micromechanics (11).
BezugszeichenlisteLIST OF REFERENCE NUMBERS
1 zu sägender MEMS-Wafer1 MEMS wafer to be sawn
2 Standard Sägefolie2 standard saw foils
3 Sägerahmen3 saw frames
4 Thermofolie4 thermo film
5 Sägemarken5 saw marks
6 Standardsägeblatt6 standard saw blades
7 Sägeschlitz7 saw slot
8 vereinzeltes MEMS-Chip8 isolated MEMS chips
9 Chip Volumenmikromechan ik mit freistehenden/frei beweglichen Strukturen9 chip volume micromechanics with free-standing / freely movable structures
10 Chip Volumenmikromechan ik mit Membranstruktur10 chip volume micromechanics with membrane structure
11 Chip Volumenmikromechan ik mit abgesenkten freistehenden/frei beweglichen Strukturen11 chip volume micromechanics with lowered free-standing / freely movable structures
12 Chip Oberflächenmikromechanik mit freistehenden / frei beweglichen Strukturen 12-chip surface micromechanics with free-standing / freely movable structures

Claims

Ansprüche: Expectations:
1. Verfahren zum Vereinzeln von Halbleiterscheiben mit frei stehenden mikromechanischen Strukturen zu Chips mittels eines Trennschleifens, mit dem folgend aufgeführten Verfahrensgang:1. Method for separating semiconductor wafers with free-standing micromechanical structures into chips by means of a cut-off, using the following procedure:
Abdecken der Halbleiterscheibe ganzflächig auf derCover the semiconductor wafer over the entire surface
Vorderseite, d.h. auf der Seite, auf der sich die mikromechanischen Strukturen befinden, mit einerFront, i.e. on the side on which the micromechanical structures are located, with a
Thermofolie;Thermal film;
Aufziehen der Halbleiterscheibe auf eineMounting the semiconductor wafer on a
Standardsägefolie, die von einem Sägerahmen (3) gehalten und gespannt wirdStandard saw foil, which is held and stretched by a saw frame (3)
(Halbleiterscheibenanordnung);(Semiconductor wafer arrangement);
Ausrichten der Sägeschnitte anhand von Sägemarken auf der Scheibenvorderseite, die durch die transparenteAlign the saw cuts with the help of saw marks on the front of the pane through the transparent
Thermofolie zu sehen sind;Thermal film can be seen;
Sägen von der Vorderseite aus unter Verwendung einesSaw from the front using a
Standardsägeblattes, wobei durch die Thermofolie hindurch gesägt wird;Standard saw blade, sawing through the thermal foil;
Säubern der Halbleiterscheibenanordnung;Cleaning the wafer assembly;
Trocknen der Halbleiterscheibenanordnung;Drying the wafer assembly;
Erwärmen der Halbleiterscheibenanordnung auf dieHeating the wafer assembly on the
Umschlagtemperatur der Thermofolie, wodurch derenEnvelope temperature of the thermal film, causing its
Klebkraft vollständig aufgehoben wird;Adhesive strength is completely removed;
Abnehmen der Thermofolie von den Chips, z.B. durchRemoving the thermal film from the chips, e.g. by
Ankippen der Anordnung.Tilt the arrangement.
2. Verfahren nach Anspruch 1 , mit einer Weiterbehandlung nach einem Standardprozess. Verfahren zum Vereinzeln von Halbleiterscheiben mit frei stehenden mikromechanischen Strukturen zu Chips mittels Trennschleifen, wobei die Halbleiterscheibe auf einer Standardsägefolie, die von einem Sägerahmen (3) gehalten wird aufgespannt ist (Halbleiterscheibenanordnung) und das Ausrichten der Sägeschnitte anhand von Sägemarken auf der Scheibenvorderseite erfolgt, dadurch gekennzeichnet, daß die Halbleiterscheibe vor dem Aufbringen auf die Standardsägefolie ganzflächig auf der Vorderseite, d.h. auf der Seite, auf der sich die mikromechanischen Strukturen befinden, mit einer transparenten Thermofolie oberflächendicht zur Halbleiterscheiben-Oberfläche abgedeckt wird, welche beim Vereinzeln mit durchtrennt und nach einem der Vereinzelung folgenden Waschen und Trocknen durch Erwärmen der Anordnung auf die Umschlagtemperatur der Thermofolie, wodurch deren Klebkraft vollständig aufgehoben wird, durch bloßes Ankippen der Anordnung von den Chips wieder entfernt wird. 2. The method of claim 1, with a further treatment according to a standard process. Process for separating semiconductor wafers with free-standing micromechanical structures into chips by means of cut-off loops, whereby the semiconductor wafer is clamped on a standard saw foil which is held by a saw frame (3) (semiconductor wafer arrangement) and the saw cuts are aligned using saw marks on the front of the wafer characterized in that the semiconductor wafer is covered over the entire surface on the front side, that is to say on the side on which the micromechanical structures are located, with a transparent thermofoil to the semiconductor wafer surface, which cuts through when separated and after one of the surface saws before the application to the standard saw foil Separation following washing and drying by heating the arrangement to the envelope temperature of the thermo film, whereby its adhesive strength is completely eliminated, is removed by simply tilting the arrangement from the chips.
EP04713843A 2003-02-27 2004-02-24 Separating semiconductor wafers having exposed micromechanical structures into individual chips Ceased EP1599412A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10308860 2003-02-27
DE10308860A DE10308860B4 (en) 2003-02-27 2003-02-27 Method for separating semiconductor wafers with exposed micromechanical structures into chips
PCT/DE2004/000337 WO2004076342A1 (en) 2003-02-27 2004-02-24 Separating semiconductor wafers having exposed micromechanical structures into individual chips

Publications (1)

Publication Number Publication Date
EP1599412A1 true EP1599412A1 (en) 2005-11-30

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EP04713843A Ceased EP1599412A1 (en) 2003-02-27 2004-02-24 Separating semiconductor wafers having exposed micromechanical structures into individual chips

Country Status (4)

Country Link
US (1) US20070031989A1 (en)
EP (1) EP1599412A1 (en)
DE (1) DE10308860B4 (en)
WO (1) WO2004076342A1 (en)

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Also Published As

Publication number Publication date
DE10308860B4 (en) 2007-09-06
DE10308860A1 (en) 2004-09-16
WO2004076342A1 (en) 2004-09-10
US20070031989A1 (en) 2007-02-08

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