EP1394578A3 - Fabrication of high index-contrast gratings using a regrowth-over-dielectric process - Google Patents

Fabrication of high index-contrast gratings using a regrowth-over-dielectric process Download PDF

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Publication number
EP1394578A3
EP1394578A3 EP03016611A EP03016611A EP1394578A3 EP 1394578 A3 EP1394578 A3 EP 1394578A3 EP 03016611 A EP03016611 A EP 03016611A EP 03016611 A EP03016611 A EP 03016611A EP 1394578 A3 EP1394578 A3 EP 1394578A3
Authority
EP
European Patent Office
Prior art keywords
dielectric
semiconductor layer
layer
over
regrowth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP03016611A
Other languages
German (de)
French (fr)
Other versions
EP1394578A2 (en
Inventor
Michael P. Nesnidal
David V. Forbes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Corp
Original Assignee
Northrop Grumman Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Corp filed Critical Northrop Grumman Corp
Publication of EP1394578A2 publication Critical patent/EP1394578A2/en
Publication of EP1394578A3 publication Critical patent/EP1394578A3/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films

Abstract

An optical device (10) including a first semiconductor layer (12) on which is deposited a dielectric layer that is patterned and etched to form dielectric strips (14) as part of a diffraction grating layer. Another semiconductor layer (16) is grown on the first semiconductor layer (12) between the dielectric strips (14), resulting in alternating dielectric sections (14) and semiconductor sections. In an alternate embodiment, a dielectric layer is deposited on a first semiconductor layer (64), and is patterned and etched to define dielectric strips (66). The semiconductor layer (64) is etched to form openings (68) between the dielectric strips (66). Another semiconductor material (70) is grown within the openings (68) and then another semiconductor layer (72) is grown over the entire surface after removing the dielectric strips (66). Either embodiment may be modified to provide diffraction grating with air channels (20).
EP03016611A 2002-08-01 2003-07-29 Fabrication of high index-contrast gratings using a regrowth-over-dielectric process Ceased EP1394578A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/210,818 US6944373B2 (en) 2002-08-01 2002-08-01 High index-step grating fabrication using a regrowth-over-dielectric process
US210818 2002-08-01

Publications (2)

Publication Number Publication Date
EP1394578A2 EP1394578A2 (en) 2004-03-03
EP1394578A3 true EP1394578A3 (en) 2004-06-16

Family

ID=31187432

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03016611A Ceased EP1394578A3 (en) 2002-08-01 2003-07-29 Fabrication of high index-contrast gratings using a regrowth-over-dielectric process

Country Status (3)

Country Link
US (1) US6944373B2 (en)
EP (1) EP1394578A3 (en)
JP (1) JP2004133408A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649439B1 (en) * 2002-08-01 2003-11-18 Northrop Grumman Corporation Semiconductor-air gap grating fabrication using a sacrificial layer process
WO2004029682A1 (en) * 2002-09-27 2004-04-08 Pirelli & C. S.P.A. Integrated optical device
US20070189669A1 (en) * 2004-07-22 2007-08-16 Maurizio Tormen Integrated wavelength selective grating-based filter
JP2010210235A (en) * 2007-07-03 2010-09-24 Asahi Glass Co Ltd Raindrop detecting system
JP5177285B2 (en) * 2009-03-30 2013-04-03 富士通株式会社 Optical element and manufacturing method thereof
US8699836B2 (en) * 2009-07-07 2014-04-15 Alcatel Lucent Optical coupler
JP2012014027A (en) * 2010-07-02 2012-01-19 Oki Electric Ind Co Ltd Star coupler and optical multiplexing/demultiplexing device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH063541A (en) * 1992-06-24 1994-01-14 Nippon Telegr & Teleph Corp <Ntt> Waveguide type grating and its production
WO1999064905A1 (en) * 1998-06-11 1999-12-16 Centre National De La Recherche Scientifique - Cnrs Light diffracting device buried in a material
US6023354A (en) * 1997-06-26 2000-02-08 Alcatel Semiconductor Bragg reflector and a method of fabricating said reflector

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Publication number Priority date Publication date Assignee Title
US5233187A (en) * 1991-01-22 1993-08-03 Canon Kabushiki Kaisha Multi-wavelength light detecting and/or emitting apparatuses having serially arranged grating directional couplers
US5157537A (en) * 1991-02-01 1992-10-20 Yeda Research And Development Co., Ltd. Distributed resonant cavity light beam modulator
DE69430361D1 (en) * 1993-01-08 2002-05-16 Massachusetts Inst Technology LOW-LOSS OPTICAL AND OPTOELECTRONIC INTEGRATED CIRCUITS
JP3374878B2 (en) * 1994-09-02 2003-02-10 三菱電機株式会社 Semiconductor etching method
JPH09331110A (en) * 1996-06-12 1997-12-22 Mitsubishi Electric Corp Optical semiconductor device and manufacture thereof
US5955749A (en) * 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
US6468823B1 (en) * 1999-09-30 2002-10-22 California Institute Of Technology Fabrication of optical devices based on two dimensional photonic crystal structures and apparatus made thereby
JP4414535B2 (en) * 2000-01-13 2010-02-10 進 野田 Manufacturing method of semiconductor device
US6365428B1 (en) * 2000-06-15 2002-04-02 Sandia Corporation Embedded high-contrast distributed grating structures
JP3591447B2 (en) * 2000-10-20 2004-11-17 日本電気株式会社 Semiconductor laser with electroabsorption type optical modulator, drive circuit therefor, and semiconductor laser device
US20020192850A1 (en) * 2001-05-25 2002-12-19 Stoltz Richard A. Laser diode graded index layer doping
US6788725B2 (en) * 2001-11-14 2004-09-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US6649439B1 (en) * 2002-08-01 2003-11-18 Northrop Grumman Corporation Semiconductor-air gap grating fabrication using a sacrificial layer process
KR100519920B1 (en) * 2002-12-10 2005-10-10 한국전자통신연구원 High Speed Optical Processing including Saturable Absorber and Gain-Clamped Optical Amplifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH063541A (en) * 1992-06-24 1994-01-14 Nippon Telegr & Teleph Corp <Ntt> Waveguide type grating and its production
US6023354A (en) * 1997-06-26 2000-02-08 Alcatel Semiconductor Bragg reflector and a method of fabricating said reflector
WO1999064905A1 (en) * 1998-06-11 1999-12-16 Centre National De La Recherche Scientifique - Cnrs Light diffracting device buried in a material

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IMADA M ET AL: "SEMICONDUCTOR LASERS WITH ONE- AND TWO-DIMENSIONAL AIR/SEMICONDUCTOR GRATINGS EMBEDDED BY WAFER FUSION TECHNIQUE", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, US, vol. 5, no. 3, May 1999 (1999-05-01), pages 658 - 663, XP000930544, ISSN: 1077-260X *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 194 (P - 1722) 5 April 1994 (1994-04-05) *

Also Published As

Publication number Publication date
US20040022489A1 (en) 2004-02-05
EP1394578A2 (en) 2004-03-03
US6944373B2 (en) 2005-09-13
JP2004133408A (en) 2004-04-30

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