EP1374356A2 - Semiconductor laser - Google Patents

Semiconductor laser

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Publication number
EP1374356A2
EP1374356A2 EP02714002A EP02714002A EP1374356A2 EP 1374356 A2 EP1374356 A2 EP 1374356A2 EP 02714002 A EP02714002 A EP 02714002A EP 02714002 A EP02714002 A EP 02714002A EP 1374356 A2 EP1374356 A2 EP 1374356A2
Authority
EP
European Patent Office
Prior art keywords
semiconductor laser
current
laser according
mode
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02714002A
Other languages
German (de)
French (fr)
Inventor
Jürgen Müller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP1374356A2 publication Critical patent/EP1374356A2/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H01S5/18333—Position of the structure with more than one structure only above the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Definitions

  • the invention relates to a semiconductor laser with a vertical resonator formed by reflectors, with an active layer arranged between the reflectors, and emitting photons, and with a current diaphragm for lateral limitation of the current flowing through the active layer.
  • Such semiconductor lasers are known as so-called VCSELs (Vertical Cavity Surface-emitting Lasers). These semiconductor lasers have a layer sequence which comprises an active layer enclosed between two DBR mirrors (distributed Bragg reflector). In order to limit the current injected into the active layer in the lateral direction, at least one current diaphragm made of an oxide is provided in one of the DBR mirrors. With their inner edge, the flow diaphragms define a flow aperture and limit the lateral expansion of the pump spot diameter in the active layer.
  • the known semiconductor lasers with current diaphragms made of oxide have low optical output powers, high ohmic resistances and high thermal resistances due to the small current aperture.
  • the object of the invention is to create a mono-mode semiconductor laser that is easy to manufacture and has a high optical output power and low ohmic and thermal resistance.
  • the additional mode-selective area along the axis of the vertical resonator effectively suppresses higher modes, since these suffer higher losses in the mode-selective areas than the basic mode. Therefore, only the basic mode can reach the laser threshold. At the same time, it is possible to increase the current aperture, which in comparison with the prior art results in a higher output power and a lower ohmic and thermal resistance.
  • the mode-selective areas are implantation areas with reduced conductivity.
  • Such implantation areas can also be formed in a large volume with sufficient precision.
  • the conductivity can be reduced by implantations, so that the higher order lateral modes are damped in the implantation areas.
  • FIG. 1 shows a cross section through a semiconductor laser according to the invention.
  • the semiconductor laser 1 shown in cross section in FIG. 1 has a lower Bragg reflector 3 applied to a substrate, on which a cavity 4 with a photon-emitting active zone is formed. Above the cavity 4 there is an upper Bragg reflector 5 in which current diaphragms 6 are formed. The inner edge of the flow diaphragms 6 defines current apertures 7, by means of which the lateral expansion of the currents injected into the cavity 4 is limited. This creates a photon-emitting pump leak 8 in the cavity 4, through which the radiation reflected between the lower Bragg reflector 3 and the upper Bragg reflector 5 is optically amplified. Part of this radiation is transmitted through the upper Bragg reflector 5 and can exit the semiconductor laser 1 through an outlet opening 9 in an annular front contact 10. In addition, a rear-side contact 11 is present on the rear of the substrate 2.
  • the upper Bragg reflector 5 is designed as a mesa 12. In edge areas of the mesa 12 there are implantation areas as mode-selective areas 13, which also extend into the substrate 2. The mode-selective regions 13 have an inner opening 14. The cross-sectional area of the inner opening 14 is always larger than the area of the current apertures 7.
  • the conductivity of the material is lower than the conductivity in the inner opening 14 of the mode-selective areas 13. Therefore, higher-order modes that extend into the mode-selective areas 13 are weakened.
  • Optical amplification only takes place in the area of the inner opening 14, that is to say in the area of the basic mode.
  • the diameter of the current apertures 7 can therefore be chosen to be larger than in the prior art.
  • the larger opening of the current apertures 7 compared to the prior art leads to a lower series resistance of the semiconductor laser 1, as well as a lower thermal resistance, which results in weaker aging effects.
  • the large current apertures 7 lead to a large pump leak and thus to higher optical output powers.
  • the inside diameter of the current apertures 7 in the semiconductor laser 1 is more than 3 ⁇ m, preferably more than 4 ⁇ m.
  • the invention described here is not restricted to certain materials.
  • the known materials that can be used for the described type of semiconductor lasers 1 come into question.
  • the usual methods known to those skilled in the art are suitable for the production.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

In one variation of the invention, a semiconductor laser comprises, in addition to current shields (6), implantation regions in the marginal area of a mesa, said implantation regions acting as mode-selective regions (13). The inner opening of the current shields (6) can thus be larger than that according to prior art. This leads to low ohmic and thermal resistance and enables a high output.

Description

Beschreibungdescription
Halbleiter-LaserSemiconductor laser
Die Erfindung betrifft einen Halbleiter-Laser mit einem von Reflektoren gebildeten Vertikalresonator, mit einer zwischen den Reflektoren angeordneten, Photonen emittierenden aktiven Schicht und mit einer Stromblende zur seitlichen Eingrenzung des durch die aktive Schicht hindurchfließenden Stromes.The invention relates to a semiconductor laser with a vertical resonator formed by reflectors, with an active layer arranged between the reflectors, and emitting photons, and with a current diaphragm for lateral limitation of the current flowing through the active layer.
Derartige Halbleiter-Laser sind als sogenannte VCSELs (Verti- cal Cavity Surface-emitting Laser) bekannt. Diese Halbleiter- Laser weisen eine Schichtfolge auf, die eine zwischen zwei DBR-Spiegeln (distributed Bragg reflector) eingeschlossene aktive Schicht umfaßt. Um den in die aktive Schicht injizierten Strom in seitlicher Richtung zu begrenzen, ist mindestens eine Stromblende aus einem Oxid in einem der DBR-Spiegel vorgesehen. Die Stromblenden definieren mit ihrem inneren Rand eine Stromapertur und beschränken die seitliche Ausdehnung des Pumpfleckdurchmessers in der aktiven Schicht.Such semiconductor lasers are known as so-called VCSELs (Vertical Cavity Surface-emitting Lasers). These semiconductor lasers have a layer sequence which comprises an active layer enclosed between two DBR mirrors (distributed Bragg reflector). In order to limit the current injected into the active layer in the lateral direction, at least one current diaphragm made of an oxide is provided in one of the DBR mirrors. With their inner edge, the flow diaphragms define a flow aperture and limit the lateral expansion of the pump spot diameter in the active layer.
Grundsätzlich ist mit derartigen Halbleiter-Lasern auch Mono- modenbetrieb möglich. Dafür ist jedoch ein verhältnismäßig kleiner Pumpfleckdurchmesser von weniger als 4μm nötig, was eine entsprechend kleine Stromapertur bedingt. Derartige kleine Durchmesser der Stromapertur sind jedoch nur mit großen Schwierigkeiten präzise herstellbar. Üblicherweise erfolgt die Oxidation seitlich von den Rändern der Schichtenfolge her, nachdem die Schichtenfolge vollständig abgeschie- den wurden ist. Dieses Vorgehensweise erfordert jedoch eine genaue Kenntnis und Steuerung der Prozeßparameter.In principle, single-mode operation is also possible with such semiconductor lasers. However, this requires a relatively small pump spot diameter of less than 4 μm, which requires a correspondingly small current aperture. However, such small diameters of the current aperture can only be produced precisely with great difficulty. The oxidation usually takes place laterally from the edges of the layer sequence after the layer sequence has been completely deposited. However, this procedure requires precise knowledge and control of the process parameters.
Außerdem weisen die bekannten Halbleiter-Laser mit Stromblenden aus Oxid aufgrund der kleinen Stromapertur niedrige opti- sehe Ausgangsleistungen, hohe ohmsche Widerstände und hohe thermische Widerstände auf. Ausgehend von diesem Stand der Technik liegt der Erfindung die Aufgabe zugrunde, einen einfach herstellbaren, monomodi- gen Halbleiter-Laser mit hoher optischer Ausgangsleistung sowie niedrigem ohmschen und thermischen Widerstand zu schaf- fen.In addition, the known semiconductor lasers with current diaphragms made of oxide have low optical output powers, high ohmic resistances and high thermal resistances due to the small current aperture. On the basis of this prior art, the object of the invention is to create a mono-mode semiconductor laser that is easy to manufacture and has a high optical output power and low ohmic and thermal resistance.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß neben der Stromblende weitere, sich in vertikaler Richtung einstreckende, den Vertikalresonator seitlich begrenzende, mo- denselektive Gebiete vorhanden sind.This object is achieved according to the invention in that, in addition to the current diaphragm, there are further, mode-selective areas which extend in the vertical direction and laterally delimit the vertical resonator.
Durch die zusätzlich modenselektiven Gebiet entlang der Achse des Vertikalresonators werden höhere Moden wirksam unterdrückt, da diese in den modenselektiven Bereichen höhere Ver- luste erleiden als die Grundmode. Daher kann nur die Grundmode die Laserschwelle erreichen. Gleichzeitig ist es möglich, die Stromapertur zu vergrößern, was im Vergleich zum Stand der Technik eine höhere Ausgangsleistung sowie einen geringeren ohmschen und thermischen Widerstand zur Folge hat.The additional mode-selective area along the axis of the vertical resonator effectively suppresses higher modes, since these suffer higher losses in the mode-selective areas than the basic mode. Therefore, only the basic mode can reach the laser threshold. At the same time, it is possible to increase the current aperture, which in comparison with the prior art results in a higher output power and a lower ohmic and thermal resistance.
Bei einer bevorzugten Ausführungsform der Erfindung sind die modenselektiven Gebiete Implantationsgebiet mit verringerter Leitfähigkeit .In a preferred embodiment of the invention, the mode-selective areas are implantation areas with reduced conductivity.
Derartige Implantationsgebiete können auch in einem großen Volumen mit ausreichender Präzision ausgebildet werden. Außerdem läßt sich durch Implantationen die Leitfähigkeit senken, so daß die Lateralmoden höherer Ordnung in den Implantationsgebieten gedämpft werden.Such implantation areas can also be formed in a large volume with sufficient precision. In addition, the conductivity can be reduced by implantations, so that the higher order lateral modes are damped in the implantation areas.
Weitere vorteilhafte Ausgestaltungen der Erfindung sind Gegenstand der abhängigen Ansprüche.Further advantageous embodiments of the invention are the subject of the dependent claims.
Nachfolgend wird die Erfindung im einzeln anhand der beige- fügten Zeichnung erläutert. Es zeigt:The invention is explained in detail below with reference to the accompanying drawing. It shows:
Figur 1 einen Querschnitt durch einen Halbleiter-Laser gemäß der Erfindung. Der im Figur 1 im Querschnitt dargestellte Halbleiter-Laser 1 weist einen auf ein Substrat aufgebrachten unteren Bragg- Reflektor 3 auf, auf dem eine Kavität 4 mit einer Photonen emittierenden, aktiven Zone ausgebildet ist. Oberhalb der Kavität 4 befindet sich ein oberer Bragg-Reflektor 5, in dem Stromblenden 6 ausgebildet sind. Der innere Rand der Stromblenden 6 definiert Stromaperturen 7, durch die die seitliche Ausdehnung der in die Kavität 4 injizierten Ströme begrenzt wird. Dadurch entsteht in der Kavität 4 ein Photonen emittierender Pumpfleck 8 durch den die zwischen dem unteren Bragg- Reflektor 3 und dem oberen Bragg-Reflektor 5 reflektierte Strahlung optisch verstärkt wird. Ein Teil dieser Strahlung wird vom oberen Bragg-Reflektor 5 hindurchgelassen und kann durch eine Austrittsöffnung 9 in einem ringförmigen Vorderseitenkontakt 10 den Halbleiter-Laser 1 verlassen. Außerdem ist auf der Rückseite des Substrats 2 ein Rückseitenkontakt 11 vorhanden.1 shows a cross section through a semiconductor laser according to the invention. The semiconductor laser 1 shown in cross section in FIG. 1 has a lower Bragg reflector 3 applied to a substrate, on which a cavity 4 with a photon-emitting active zone is formed. Above the cavity 4 there is an upper Bragg reflector 5 in which current diaphragms 6 are formed. The inner edge of the flow diaphragms 6 defines current apertures 7, by means of which the lateral expansion of the currents injected into the cavity 4 is limited. This creates a photon-emitting pump leak 8 in the cavity 4, through which the radiation reflected between the lower Bragg reflector 3 and the upper Bragg reflector 5 is optically amplified. Part of this radiation is transmitted through the upper Bragg reflector 5 and can exit the semiconductor laser 1 through an outlet opening 9 in an annular front contact 10. In addition, a rear-side contact 11 is present on the rear of the substrate 2.
Im allgemeinen ist der obere Bragg-Reflektor 5 als Mesa 12 ausgebildet. In Randbereichen der Mesa 12 befinden sich Implantationsgebiete als modenselektive Gebiete 13, die sich auch in das Substrat 2 erstrecken. Die modenselektiven Gebiete 13 weisen eine Innenöffnung 14 auf. Die Querschnittsfläche der Innenöffnung 14 ist stets größer als die Fläche der Stromaperturen 7.In general, the upper Bragg reflector 5 is designed as a mesa 12. In edge areas of the mesa 12 there are implantation areas as mode-selective areas 13, which also extend into the substrate 2. The mode-selective regions 13 have an inner opening 14. The cross-sectional area of the inner opening 14 is always larger than the area of the current apertures 7.
Durch Implantation ist in den modenselektiven Gebiete 13 die Leitfähigkeit des Materials geringer als die Leitfähigkeit in der Innenöffnung 14 der modenselektiven Gebiete 13. Daher werden Moden höherer Ordnung, die sich in die modenselektiven Gebiete 13 erstrecken, geschwächt. Eine optische Verstärkung findet nur im Bereich der Innenöffnung 14, also im Bereich der Grundmode statt. Daher kann der Durchmesser der Stroma- perturen 7 größer als beim Stand der Technik gewählt werden.By implantation in the mode-selective areas 13, the conductivity of the material is lower than the conductivity in the inner opening 14 of the mode-selective areas 13. Therefore, higher-order modes that extend into the mode-selective areas 13 are weakened. Optical amplification only takes place in the area of the inner opening 14, that is to say in the area of the basic mode. The diameter of the current apertures 7 can therefore be chosen to be larger than in the prior art.
Die im Vergleich zum Stand der Technik größere Öffnung der Stromaperturen 7 führt zu einem geringeren Serienwiderstand des Halbleiter-Lasers 1, sowie zu einem geringeren thermischen Widerstand, was schwächere Alterungseffekte zur Folge hat . Außerdem führen die großen Stromaperturen 7 zu einem großen Pumpfleck und damit zu höheren optischen Ausgangslei - stungen. Der Innendurchmesser der Stromaperturen 7 beträgt beim Halbleiter-Laser 1 mehr als 3 μm, vorzugsweise mehr als 4 μm.The larger opening of the current apertures 7 compared to the prior art leads to a lower series resistance of the semiconductor laser 1, as well as a lower thermal resistance, which results in weaker aging effects. In addition, the large current apertures 7 lead to a large pump leak and thus to higher optical output powers. The inside diameter of the current apertures 7 in the semiconductor laser 1 is more than 3 μm, preferably more than 4 μm.
Von besonderem Vorteil ist auch, daß die Herstellung der Stromblenden 6 im Vergleich zum Stand der Technik besser be- herschbar ist, da die herstellungsbedingten Abweichungen bei der Fertigung der Stromblenden 6 relativ gesehen kleiner sind.It is also of particular advantage that the production of the current diaphragms 6 is easier to manage compared to the prior art, since the manufacturing-related deviations in the production of the current diaphragms 6 are relatively smaller.
Durch die doppelte Ausführung der Stromblenden 6 können ferner Randüberhöhungen der Strominjektion in die Kavität 4 vermieden werden, die an sich auch die Monomodigkeit gefährden.Due to the double design of the flow diaphragms 6, edge increases in the current injection into the cavity 4 can also be avoided, which in themselves also endanger the monomode.
Die hier beschriebene Erfindung ist nicht auf bestimmte Mate- rialien beschränkt. In Frage kommen die bekannten, für die beschriebene Art von Halbleiter-Lasern 1 verwendbaren Materialien. Für die Herstellung eignen sich die üblichen, dem Fachmann bekannten Verfahren. The invention described here is not restricted to certain materials. The known materials that can be used for the described type of semiconductor lasers 1 come into question. The usual methods known to those skilled in the art are suitable for the production.

Claims

Patentansprüche claims
1. Halbleiter-Laser mit einem von Reflektoren (3,5) gebildeten Vertikalresonator, mit einer zwischen den Reflektoren (3,5) angeordneten, Photonen emittierenden aktiven Schicht (8) und mit mindestens einer Stromblende (6) zur seitlichen Eingrenzung des durch die aktive Schicht (8) hindurchfließenden Stromes, d a d u r c h g e k e n n z e i c h n e t, daß neben der Stromblende (6) weitere, sich in vertikaler Richtung erstreckende, den Vertikalresonator seitlich begrenzende, modenselektive Gebiete (13) vorhanden sind.1. Semiconductor laser with a vertical resonator formed by reflectors (3,5), with a photon-emitting active layer (8) arranged between the reflectors (3,5) and with at least one current diaphragm (6) for the lateral limitation of the Active layer (8) of current flowing through, characterized in that, in addition to the current diaphragm (6), there are further mode-selective regions (13) which extend in the vertical direction and laterally delimit the vertical resonator.
2. Halbleiter-Laser nach Anspruch 1, d a d u r c h g e k e n n z e i c h n e t, daß der Reflektor in einer Mesa (12) ausgebildet ist.2. Semiconductor laser according to claim 1, d a d u r c h g e k e n n z e i c h n e t that the reflector is formed in a mesa (12).
3. Halbleiter-Laser nach Anspruch 1 oder 2, d a d u r c h g e k e n n z e i c h n e t, daß die Mesa (12) einen Durchmesser >10μm aufweist.3. Semiconductor laser according to claim 1 or 2, so that the mesa (12) has a diameter> 10 μm.
4. Halbleiter-Laser nach einem der Ansprüche 1 bis 2, d a d u r c h g e k e n n z e i c h n e t, daß die Stromblende (6) aus Oxid gefertigt ist.4. Semiconductor laser according to one of claims 1 to 2, d a d u r c h g e k e n n z e i c h n e t that the current diaphragm (6) is made of oxide.
5. Halbleiter-Laser nach einem der Ansprüche 1 bis 4, d a d u r c h g e k e n n z e i c h n e t, daß die von der Stromblende (6) gebildete Stromapertur (7) einen Durchmesser > 3μm aufweist.5. Semiconductor laser according to one of claims 1 to 4, d a d u r c h g e k e n n z e i c h n e t that the current aperture (7) formed by the current aperture (6) has a diameter> 3μm.
6. Halbleiter-Laser nach Anspruch 5, d a d u r c h g e k e n n z e i c h n e t, daß die Stromblende (6) einen Durchmesser > 4μm aufweist.6. Semiconductor laser according to claim 5, d a d u r c h g e k e n n z e i c h n e t that the current diaphragm (6) has a diameter> 4 microns.
7. Halbleiter-Laser nach einem der Ansprüche 1 bis 6, d a d u r c h g e k e n n z e i c h n e t, daß eine Innenöffnung (14) der modenselektiven Gebiete (13) größer als die Stromapertur (7) ist. 7. Semiconductor laser according to one of claims 1 to 6, characterized in that an inner opening (14) of the mode-selective areas (13) is larger than the current aperture (7).
8. Halbleiter-Laser nach einem der Ansprüche 1 bis 7, d a d u r c h g e k e n n z e i c h n e t, daß die modenselektiven Gebiete (13) eine Leitfähigkeit auf- weisen, die kleiner ist als eine Leitfähigkeit des Vertikal- Resonators entlang der Resonatorachse.8. Semiconductor laser according to one of claims 1 to 7, so that the mode-selective regions (13) have a conductivity that is smaller than a conductivity of the vertical resonator along the resonator axis.
9. Halbleiter-Laser nach einem der Ansprüche 1 bis 8, d a d u r c h g e k e n n z e i c h n e t, daß das modenselektive Gebiet (13) ein Implantationsgebiet ist .9. Semiconductor laser according to one of claims 1 to 8, d a d u r c h g e k e n n z e i c h n e t that the mode-selective area (13) is an implantation area.
10. Halbleiter-Laser nach Anspruch 9, d a d u r c h g e k e n n z e i c h n e t, daß sich das modenselektive Gebiet (13) im Rand- und Umgebungsbereich des Vertikalresonators erstreckt.10. The semiconductor laser according to claim 9, so that the mode-selective region (13) extends in the peripheral and surrounding area of the vertical resonator.
11. Halbleiter-Laser nach einem der Ansprüche 1 bis 10, d a d u r c h g e k e n n z e i c h n e t, daß der Halbleiterlaser zwei oder mehr Stromblenden (6) umfaßt.11. Semiconductor laser according to one of claims 1 to 10, d a d u r c h g e k e n n z e i c h n e t that the semiconductor laser comprises two or more current diaphragms (6).
12. Halbleiter-Laser nach einem der Ansprüche 1 bis 11, d a d u r c h g e k e n n z e i c h n e t, daß der Halbleiter-Laser eine Mehrschichtstruktur aufweist und die modenselektiven Gebiete (13) in dieser Mehrschichtstruktur gebildet sind. 12. Semiconductor laser according to one of claims 1 to 11, characterized in that the semiconductor laser has a multilayer structure and the mode-selective regions (13) are formed in this multilayer structure.
1/11.1
EP02714002A 2001-02-08 2002-02-08 Semiconductor laser Withdrawn EP1374356A2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10105722A DE10105722B4 (en) 2001-02-08 2001-02-08 Semiconductor laser with vertical resonator and mode-selective areas
DE10105722 2001-02-08
PCT/DE2002/000471 WO2002063733A2 (en) 2001-02-08 2002-02-08 Semiconductor laser with a vertical resonator

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EP1374356A2 true EP1374356A2 (en) 2004-01-02

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US (1) US7177339B2 (en)
EP (1) EP1374356A2 (en)
JP (1) JP2004518304A (en)
DE (1) DE10105722B4 (en)
WO (1) WO2002063733A2 (en)

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US7177339B2 (en) 2007-02-13
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WO2002063733A3 (en) 2003-10-16
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