EP1277098A1 - Current generating device and voltage generating device - Google Patents
Current generating device and voltage generating deviceInfo
- Publication number
- EP1277098A1 EP1277098A1 EP01929286A EP01929286A EP1277098A1 EP 1277098 A1 EP1277098 A1 EP 1277098A1 EP 01929286 A EP01929286 A EP 01929286A EP 01929286 A EP01929286 A EP 01929286A EP 1277098 A1 EP1277098 A1 EP 1277098A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- current
- generating device
- voltage
- power generation
- voltage generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
Definitions
- the present invention relates to devices according to the preambles of claims 1 and 14, i. H .
- a power generation device through which a predetermined current can be impressed into a device connected to it, or
- Voltages are only required on certain occasions (for example for programming a flash memory) or because the devices which are supplied with energy by the power generation devices or the voltage generation devices do not always have to or should not be in operation. Circuits or circuit parts that do not always have to or should not be in operation are often put into an energy-saving mode of operation, such as a so-called sleep mode or a so-called power-down mode, at times when they are not required. In these operating modes, the relevant circuits or circuit parts are set in a state in which they consume less or no energy at all. This can reduce energy consumption and heat development.
- the current generating device or voltage generating device supplying the relevant circuit or the relevant circuit part is preferably deactivated; this allows energy consumption and heat generation to be reduced as much as possible.
- Circuits or circuit parts that are set in an energy-saving mode can be returned to the if necessary
- Normal operating mode are reset, in which, as the name already shows, they are normally supplied with energy and work normally.
- the switchover is generally only initiated at the point in time at which the circuit or the circuit part in question is required. is done. But after that you have to wait until the switch to normal mode is completed (until the circuit or part of the circuit in question is working or can work again as intended), so switching to normal mode is more or less long pause, during which the integrated circuit containing the circuit or circuit section in question cannot or at least cannot operate at maximum power.
- the present invention is therefore based on the object of finding a way by which the switchover of a circuit or a circuit part from an energy-saving operating mode to the normal operating mode can be accelerated.
- the power generation device is characterized in that it is designed, in response to predetermined events, to temporarily impress a current that is otherwise changed in the device connected to the power generation device, and -
- the voltage generating device is characterized in that it is designed, in response to predetermined events, temporarily to an otherwise changed voltage to the to the
- Such current generating devices and voltage generating devices make it possible for the circuit or the circuit part which is thereby supplied with energy to be briefly supplied with a current or a voltage after the switching from an energy-saving operating mode into the normal operating mode which accelerates the reaching of the normal operating mode.
- the relevant circuit or the relevant circuit part changes into the state more quickly that he has to take to work normally.
- the capacitances present in the circuit to be switched over or in the circuit part to be switched over, including parasitic capacitances such as line capacitances (capacitances formed by the lines present in the circuit or in the circuit part) and Gate capacitances (capacitances at gate connections of field effect transistors) can be charged, discharged or reloaded more quickly than is necessary for correct operation of the circuit or of the circuit part.
- parasitic capacitances such as line capacitances (capacitances formed by the lines present in the circuit or in the circuit part) and Gate capacitances (capacitances at gate connections of field effect transistors)
- line capacitances capacitances formed by the lines present in the circuit or in the circuit part
- Gate capacitances capacitors at gate connections of field effect transistors
- FIG. 1 shows an embodiment of the power generation device described in more detail below, and FIG. 2 shows time diagrams to illustrate the conditions that arise in the power generation device according to FIG. 1.
- the power generation device described in more detail below and the voltage generation device described in more detail below are part of an integrated circuit.
- the integrated circuit is a microcontroller; the power generation device and voltage generation device described are used in the example under consideration to supply read amplifiers with energy for reading out a memory provided in the microcontroller (an embedded memory).
- the described power generating device and the described voltage generating device can also be used in any other integrated circuits and also outside of integrated circuits and can be used to supply any devices inside and outside of integrated circuits.
- the power generation device described is distinguished by the fact that it is designed to temporarily impress, in response to predetermined events, a current that is different from that in the device connected to the power generation device.
- the voltage generating device described is distinguished by the fact that it is designed to temporarily apply a voltage which is different from that to the device connected to the voltage generating device in response to predetermined events.
- these special features are used to determine the to bring the voltage generating device to be supplied with energy as quickly as possible from an energy-saving mode of operation such as the so-called sleep mode or the so-called power-down mode to the normal mode.
- the special features of the described power generation device and the described voltage supply device can, however, also be used advantageously for other purposes, for example in order to bring the device to be supplied with energy into an operational state more quickly after the system has been switched on.
- the power generation device described is shown in FIG. 1.
- the arrangement shown comprises a bias current generator IG, PMOS transistors TO to Tn, an NMOS transistor Tdyn, a capacitor C, and a resistor R.
- the bias current generator IG generates a current I B ias ⁇ which is converted into bias currents I B iasi to I B iasn in the manner described in more detail below by the transistors TO to Tn connected to form a current mirror.
- the bias currents I B iasi to I B iasn are the currents which are impressed into the sense amplifiers of the microcontroller under consideration, which are not shown in the figures, and via which these are supplied with the energy required for their operation.
- the bias current generator IG is connected in series with the transistor TO. As a result, the current I B i as o generated by the bias current generator flows through the transistor TO.
- a current flow through the transistor TO causes currents to flow through the transistors Tl to Tn connected to the transistor TO, namely the currents I B i as ⁇ to I B iasn - the size of the currents I B iasi to I B i aS n depends on the W / L ratios that the transistor TO and the transistors Tl to Tn have.
- the currents I ⁇ i as i to I B ias n do not originate from the bias current generator IG; these currents come from supply lines VI and V2, which are supplied with a positive potential VDD (VI) and a neutral or negative potential VSS (V2) by another energy source, not shown in the figures.
- the currents I B i as ⁇ to I ß i asn have a constant size that differs from zero; when the devices to be supplied with energy by these currents (the sense amplifiers) are set to the energy-saving mode mentioned above, the currents I B i as o to Ißias n are zero.
- the bias current generator IG When the sense amplifiers are switched from the energy-saving mode to the normal mode, the bias current generator IG (deactivated during the energy-saving mode) is activated. However, the current I B iaso generated by the bias current generator does not increase suddenly, but only very gradually to the size that it would have to have for the sense amplifiers to operate properly. This is shown in image (c) of FIG. 2, which is described in more detail below. Without the peculiarities of the power generation device under consideration described in more detail below, the currents I B iasi to Ißiasn would have a similar course, which would have the consequence that it takes a relatively long time until the sense amplifiers are ready for operation.
- this additional circuit part ensures that the transistor TO (through which the current I B i as o generated by the bias current generator IG flows) is additionally flowed through by a current which is not generated by the bias current generator IG when predetermined events occur.
- the flow of the additional current is brought about by switching through a switching device which is connected in series with the transistor TO which is flowed through by the bias current generator IG and through which the additional current flows, and the actuation of which opens and closes the transistor and the switching device containing circuit causes.
- said switching device is formed by a transistor provided in parallel with the bias current generator IG. This transistor is the transistor Tdyn already mentioned at the beginning.
- the transistor Tdyn is controlled by a signal which signals the events in response to which a current which is otherwise changed is to be impressed into the device (the sense amplifiers) connected to the power generation device.
- this signal is a powerdown signal PWD ⁇ which indicates the operating mode of the device connected to the power generating device and is Gate connection of the transistor Tdyn supplied via a high pass;
- the high-pass filter is formed by the capacitor C already mentioned and the resistor R also already mentioned.
- the powerdown signal PWD ⁇ has the level 0 when the sense amplifiers are in the energy-saving mode and has the level 1 when the sense amplifiers are in the normal mode.
- the transistor Tdyn and the high pass connected upstream of it are arranged and dimensioned such that "only" a current I ⁇ yn flows "only” for a short time after the sense amplifier has been switched from the energy-saving mode to the normal mode, and that the current I dyn to all other times is zero.
- the high-pass filter blocks the signal, whereby the transistor blocks regardless of the level of the powerdown signal PWD ⁇ .
- the high pass connected upstream of the gate connection of the transistor Tdyn has the effect that the powerdown signal PWD ⁇ can briefly reach the gate connection of the transistor Tdyn. This in turn results in the transistor Tdyn being temporarily brought into the conductive state, as a result of which a non-zero current I dyn through the transistor Tdyn flows.
- the time course of the current I dyn is illustrated in diagram (b) in FIG. 2. Accordingly, the current I dyn initially rises steeply from tO to a relatively high value, and then gradually drops back to zero.
- a current flow is also brought about from time tO onwards by the bias current generator IG which has been reactivated from then on.
- the time course of the current I B i as o is illustrated in diagram (c) of FIG. 2. Accordingly, the current I B i as0 gradually increases from tO from zero to the current required for the sense amplifiers to operate properly.
- This current flow has the effect that current flows with corresponding temporal profiles also occur in the transistors T1 to Tn.
- the course of the current flowing through the transistor T1 (which is impressed into the associated sense amplifier) is illustrated in diagram (d) of FIG. Accordingly, the current Ißiasi initially rises steeply to a relatively high value from tO, and then gradually drops again to the current which is required for the sense amplifiers to operate properly in the steady state.
- the device to be supplied by the power generating device does not consist of one or more sense amplifiers, but is any other device.
- the power generating device is designed to temporarily impress a current which is otherwise reduced in response to certain events into the device in question.
- the event in response to which the power generation device impresses a current which is otherwise changed compared to the connected device does not have to be the switching of the device in question from an energy-saving mode to the normal mode; it can also be any other event.
- the peculiarities of the power generation device described above can also be used analogously with voltage generation devices.
- a voltage generating device is then characterized in that it is designed, in response to predetermined events, to temporarily apply a voltage that is otherwise changed to the device connected to the voltage generating device, the voltage that the voltage generating device in response to the predetermined events to the establish connected facilities, - "only" can be slightly larger or smaller than the voltage that the voltage generating device would apply at the relevant time if the predetermined event had not occurred, or
- the device to which the voltage generating device applies the voltage generated by it is a current generating device which generates a current whose magnitude depends on the voltage generated by the voltage generating device, such a voltage generating device (and a conventional power generating device) can the same effect can be achieved as with the novel power generation device described above.
- any other devices can also be connected to the voltage generating device, and of course the events in response to which the voltage generating device generates a voltage that is otherwise changed can be any events.
- power generation devices and voltage generation devices can be used advantageously for a wide variety of applications. They enable, among other things, but by no means exclusively, that the switching of a circuit or a circuit part can be carried out as quickly as possible from an energy-saving mode into the normal mode.
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10015276 | 2000-03-28 | ||
DE10015276A DE10015276A1 (en) | 2000-03-28 | 2000-03-28 | Power generating device and voltage generating device |
PCT/DE2001/001237 WO2001073519A1 (en) | 2000-03-28 | 2001-03-27 | Current generating device and voltage generating device |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1277098A1 true EP1277098A1 (en) | 2003-01-22 |
EP1277098B1 EP1277098B1 (en) | 2016-03-23 |
Family
ID=7636620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01929286.1A Expired - Lifetime EP1277098B1 (en) | 2000-03-28 | 2001-03-27 | Current generating device and voltage generating device |
Country Status (4)
Country | Link |
---|---|
US (1) | US6667609B2 (en) |
EP (1) | EP1277098B1 (en) |
DE (1) | DE10015276A1 (en) |
WO (1) | WO2001073519A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004030161B4 (en) * | 2004-06-22 | 2007-10-11 | I F M Electronic Gmbh | Slat arrangement for selectively generating an analog current output value or an analog voltage output value |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1217736B (en) * | 1988-05-26 | 1990-03-30 | Sgs Thomson Microeletronics Sp | SELF-POWERED DELAYED ELECTRONIC SHUTDOWN CIRCUIT WITH VERY LOW VOLTAGE CONTROL |
DE4034371C1 (en) * | 1990-10-29 | 1991-10-31 | Eurosil Electronic Gmbh, 8057 Eching, De | |
US5336986A (en) * | 1992-02-07 | 1994-08-09 | Crosspoint Solutions, Inc. | Voltage regulator for field programmable gate arrays |
US5264784A (en) * | 1992-06-29 | 1993-11-23 | Motorola, Inc. | Current mirror with enable |
FR2724025B1 (en) * | 1994-08-31 | 1997-01-03 | Sgs Thomson Microelectronics | INTEGRATED CIRCUIT WITH QUICK START FUNCTION OF VOLTAGE OR REFERENCE CURRENT SOURCES |
US5598095A (en) * | 1995-03-08 | 1997-01-28 | Alliance Semiconductor Corporation | Switchable current source for digital-to-analog converter (DAC) |
US5751182A (en) * | 1996-08-28 | 1998-05-12 | Texas Instruments Incorporated | Rapid start-up circuit for voltage reference and method of operation |
JPH10143263A (en) * | 1996-11-13 | 1998-05-29 | Toshiba Corp | Starting circuit for self-bias type constant current circuit, constant current circuit using the same, and operational amplifier |
JP3532721B2 (en) * | 1996-12-19 | 2004-05-31 | 株式会社東芝 | Constant voltage generator |
US5754477A (en) * | 1997-01-29 | 1998-05-19 | Micron Technology, Inc. | Differential flash memory cell and method for programming |
JP2002042467A (en) * | 2000-07-21 | 2002-02-08 | Mitsubishi Electric Corp | Voltage reducing circuit and semiconductor ic device having the circuit |
US6404252B1 (en) * | 2000-07-31 | 2002-06-11 | National Semiconductor Corporation | No standby current consuming start up circuit |
-
2000
- 2000-03-28 DE DE10015276A patent/DE10015276A1/en not_active Withdrawn
-
2001
- 2001-03-27 EP EP01929286.1A patent/EP1277098B1/en not_active Expired - Lifetime
- 2001-03-27 WO PCT/DE2001/001237 patent/WO2001073519A1/en active Application Filing
-
2002
- 2002-09-30 US US10/262,178 patent/US6667609B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
Title |
---|
See references of WO0173519A1 * |
Also Published As
Publication number | Publication date |
---|---|
US6667609B2 (en) | 2003-12-23 |
DE10015276A1 (en) | 2001-10-11 |
EP1277098B1 (en) | 2016-03-23 |
WO2001073519A1 (en) | 2001-10-04 |
US20030076081A1 (en) | 2003-04-24 |
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