EP1261025A3 - Semiconductor device and method of fabricating same - Google Patents

Semiconductor device and method of fabricating same Download PDF

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Publication number
EP1261025A3
EP1261025A3 EP02011760A EP02011760A EP1261025A3 EP 1261025 A3 EP1261025 A3 EP 1261025A3 EP 02011760 A EP02011760 A EP 02011760A EP 02011760 A EP02011760 A EP 02011760A EP 1261025 A3 EP1261025 A3 EP 1261025A3
Authority
EP
European Patent Office
Prior art keywords
dielectric layer
base
base region
stopper
graft base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP02011760A
Other languages
German (de)
French (fr)
Other versions
EP1261025A2 (en
EP1261025B1 (en
Inventor
Hisamitsu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Publication of EP1261025A2 publication Critical patent/EP1261025A2/en
Publication of EP1261025A3 publication Critical patent/EP1261025A3/en
Application granted granted Critical
Publication of EP1261025B1 publication Critical patent/EP1261025B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts

Abstract

A semiconductor device raises the maximum oscillation frequency fmax of the bipolar transistor. The stopper dielectric layer is formed on the substrate to cover the transistor section and the isolation dielectric. The interlayer dielectric layer is formed on the stopper dielectric layer. The base contact plug, which is formed in the interlayer dielectric layer, is located over the isolation dielectric in such a way as to contact the graft base region near its bottom end corner. Therefore, the base contact needs not to entirely overlap with the graft base region, which means that the graft base region can be narrowed without increasing the base resistance Rb and that the collector-base capacitance Ccb is reduced. Also, electrical short circuit between the graft base region and the collector region can be effectively suppressed by the stopper dielectric layer.
EP02011760A 2001-05-25 2002-05-27 Semiconductor device and method of fabricating same Expired - Fee Related EP1261025B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001157313A JP3621359B2 (en) 2001-05-25 2001-05-25 Semiconductor device and manufacturing method thereof
JP2001157313 2001-05-25

Publications (3)

Publication Number Publication Date
EP1261025A2 EP1261025A2 (en) 2002-11-27
EP1261025A3 true EP1261025A3 (en) 2005-01-12
EP1261025B1 EP1261025B1 (en) 2008-07-09

Family

ID=19001200

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02011760A Expired - Fee Related EP1261025B1 (en) 2001-05-25 2002-05-27 Semiconductor device and method of fabricating same

Country Status (6)

Country Link
US (1) US6906363B2 (en)
EP (1) EP1261025B1 (en)
JP (1) JP3621359B2 (en)
KR (1) KR20020090352A (en)
DE (1) DE60227451D1 (en)
TW (1) TW556339B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7084485B2 (en) * 2003-12-31 2006-08-01 Freescale Semiconductor, Inc. Method of manufacturing a semiconductor component, and semiconductor component formed thereby
KR101118652B1 (en) * 2004-12-17 2012-03-07 삼성전자주식회사 Bipolar Junction Transistor with high Gain integratable with CMOS FET process and Method for Forming the Same
KR101030295B1 (en) * 2004-12-30 2011-04-20 동부일렉트로닉스 주식회사 Field Transistor for Testing Isolation in Semiconductor Device
KR20060078251A (en) * 2004-12-31 2006-07-05 동부일렉트로닉스 주식회사 Composite pattern for measuring semiconductor device characteristics
JP4455356B2 (en) * 2005-01-28 2010-04-21 Ｎｅｃエレクトロニクス株式会社 Semiconductor device
US9123558B2 (en) * 2011-06-20 2015-09-01 Mediatek Inc. Bipolar junction transistor
CN102412272B (en) * 2011-07-28 2013-09-11 上海华虹Nec电子有限公司 Vertical parasitic type PNP device in BiCMOS technology
CN109148416B (en) * 2018-08-31 2020-06-16 上海华虹宏力半导体制造有限公司 Semiconductor device structure and forming method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0349107A2 (en) * 1988-06-30 1990-01-03 Sony Corporation Semiconductor devices
US4892837A (en) * 1987-12-04 1990-01-09 Hitachi, Ltd. Method for manufacturing semiconductor integrated circuit device
EP0409370A2 (en) * 1985-05-07 1991-01-23 Nippon Telegraph And Telephone Corporation Bipolar transistor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2280550A1 (en) 1974-08-01 1976-02-27 Multivac Haggenmueller Kg Sealed object packing machine - with endless chain drive via sprockets with ratchet teeth
US4789885A (en) * 1987-02-10 1988-12-06 Texas Instruments Incorporated Self-aligned silicide in a polysilicon self-aligned bipolar transistor
JPH03165039A (en) * 1989-11-24 1991-07-17 Nec Corp Vertical bipolar transistor
JPH0422133A (en) * 1990-05-17 1992-01-27 Fujitsu Ltd Bipolar transistor
US5121184A (en) 1991-03-05 1992-06-09 Hewlett-Packard Company Bipolar transistor containing a self-aligned emitter contact and method for forming transistor
EP0529717A3 (en) 1991-08-23 1993-09-22 N.V. Philips' Gloeilampenfabrieken Method of manufacturing a semiconductor device having overlapping contacts
JPH05267317A (en) * 1992-03-18 1993-10-15 Fujitsu Ltd Semiconductor device and its manufacture
JPH0677241A (en) * 1992-09-17 1994-03-18 Sony Corp Bipolar transistor
JP3472623B2 (en) * 1994-07-08 2003-12-02 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP2000252294A (en) * 1999-03-01 2000-09-14 Nec Corp Semiconductor device and its manufacture
JP3748744B2 (en) 1999-10-18 2006-02-22 Ｎｅｃエレクトロニクス株式会社 Semiconductor device
JP2002252294A (en) 2001-02-22 2002-09-06 Sumitomo Metal Electronics Devices Inc Solder and semiconductor package using it

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0409370A2 (en) * 1985-05-07 1991-01-23 Nippon Telegraph And Telephone Corporation Bipolar transistor
US4892837A (en) * 1987-12-04 1990-01-09 Hitachi, Ltd. Method for manufacturing semiconductor integrated circuit device
EP0349107A2 (en) * 1988-06-30 1990-01-03 Sony Corporation Semiconductor devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 0161, no. 85 (E - 1197) 6 May 1992 (1992-05-06) *
PATENT ABSTRACTS OF JAPAN vol. 0183, no. 26 (E - 1565) 21 June 1994 (1994-06-21) *

Also Published As

Publication number Publication date
JP2002353232A (en) 2002-12-06
US20040195586A1 (en) 2004-10-07
EP1261025A2 (en) 2002-11-27
US6906363B2 (en) 2005-06-14
JP3621359B2 (en) 2005-02-16
TW556339B (en) 2003-10-01
DE60227451D1 (en) 2008-08-21
EP1261025B1 (en) 2008-07-09
KR20020090352A (en) 2002-12-02

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