EP1254483A4 - Optischer mehrfarbendetektor mit mehreren bildebenen - Google Patents

Optischer mehrfarbendetektor mit mehreren bildebenen

Info

Publication number
EP1254483A4
EP1254483A4 EP00990331A EP00990331A EP1254483A4 EP 1254483 A4 EP1254483 A4 EP 1254483A4 EP 00990331 A EP00990331 A EP 00990331A EP 00990331 A EP00990331 A EP 00990331A EP 1254483 A4 EP1254483 A4 EP 1254483A4
Authority
EP
European Patent Office
Prior art keywords
color
focal plane
optical detector
plane optical
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP00990331A
Other languages
English (en)
French (fr)
Other versions
EP1254483A1 (de
Inventor
Thomas Faska
Michael Taylor
Mani Sundaram
Richard Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAE Systems Information and Electronic Systems Integration Inc
Original Assignee
BAE Systems Information and Electronic Systems Integration Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BAE Systems Information and Electronic Systems Integration Inc filed Critical BAE Systems Information and Electronic Systems Integration Inc
Publication of EP1254483A1 publication Critical patent/EP1254483A1/de
Publication of EP1254483A4 publication Critical patent/EP1254483A4/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
EP00990331A 1999-12-24 2000-12-22 Optischer mehrfarbendetektor mit mehreren bildebenen Ceased EP1254483A4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US17307799P 1999-12-24 1999-12-24
US173077P 1999-12-24
US25667500P 2000-12-18 2000-12-18
US256675P 2000-12-18
PCT/US2000/035162 WO2001048831A1 (en) 1999-12-24 2000-12-22 Multi-color, multi-focal plane optical detector

Publications (2)

Publication Number Publication Date
EP1254483A1 EP1254483A1 (de) 2002-11-06
EP1254483A4 true EP1254483A4 (de) 2008-03-05

Family

ID=26868759

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00990331A Ceased EP1254483A4 (de) 1999-12-24 2000-12-22 Optischer mehrfarbendetektor mit mehreren bildebenen

Country Status (2)

Country Link
EP (1) EP1254483A4 (de)
WO (1) WO2001048831A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7238960B2 (en) * 1999-12-24 2007-07-03 Bae Systems Information And Electronic Systems Integration Inc. QWIP with enhanced optical coupling
US9599723B2 (en) 2015-08-18 2017-03-21 Carestream Health, Inc. Method and apparatus with tiled image sensors

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506419A (en) * 1994-11-10 1996-04-09 At&T Corp. Quantum well photodetector with pseudo-random reflection
US5552603A (en) * 1994-09-15 1996-09-03 Martin Marietta Corporation Bias and readout for multicolor quantum well detectors
WO1998009141A2 (en) * 1996-08-27 1998-03-05 California Institute Of Technology Infrared radiation-detecting device
EP0849798A1 (de) * 1996-12-04 1998-06-24 Thomson-Csf Photoleitender Detektor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE468188B (sv) * 1991-04-08 1992-11-16 Stiftelsen Inst Foer Mikroelek Metod foer inkoppling av straalning i en infraroeddetektor, jaemte anordning
US5959339A (en) 1996-03-19 1999-09-28 Raytheon Company Simultaneous two-wavelength p-n-p-n Infrared detector
EP1040522B1 (de) * 1997-10-16 2008-12-03 California Institute Of Technology Zweiband infrarot quantentopf-detektoranordnung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552603A (en) * 1994-09-15 1996-09-03 Martin Marietta Corporation Bias and readout for multicolor quantum well detectors
US5506419A (en) * 1994-11-10 1996-04-09 At&T Corp. Quantum well photodetector with pseudo-random reflection
WO1998009141A2 (en) * 1996-08-27 1998-03-05 California Institute Of Technology Infrared radiation-detecting device
EP0849798A1 (de) * 1996-12-04 1998-06-24 Thomson-Csf Photoleitender Detektor

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ANDERSSON J Y ET AL: "GRATING-COUPLED QUANTUM-WELL INFRARED DETECTORS: THEORY AND PERFORMANCE", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 71, no. 7, 1 April 1992 (1992-04-01), pages 3600 - 3610, XP002937735, ISSN: 0021-8979 *
ANDERSSON J Y ET AL: "NEAR-UNITY QUANTUM EFFICIENCY OF ALGAAS/GAAS QUANTUM WELL INFRARED DETECTORS USING A WAVEGUIDE WITH A DOUBLY PERIODIC GRATING COUPLER", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 59, no. 7, 12 August 1991 (1991-08-12), pages 857 - 859, XP000233772, ISSN: 0003-6951 *
See also references of WO0148831A1 *
TIDROW M Z ET AL: "GRATING COUPLED MULTICOLOR QUANTUM WEL INFRARED PHOTODETECTORS", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 67, no. 13, 25 September 1995 (1995-09-25), pages 1800 - 1802, XP002937734, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
EP1254483A1 (de) 2002-11-06
WO2001048831A8 (en) 2001-12-27
WO2001048831A9 (en) 2002-05-16
WO2001048831A1 (en) 2001-07-05

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 20020628

AK Designated contracting states

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Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

A4 Supplementary search report drawn up and despatched

Effective date: 20080131

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 31/0352 20060101ALI20080125BHEP

Ipc: H01L 31/0232 20060101AFI20010711BHEP

17Q First examination report despatched

Effective date: 20080430

STAA Information on the status of an ep patent application or granted ep patent

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18R Application refused

Effective date: 20100609