EP1247316A4 - Control of current spreading in semiconductor laser diodes - Google Patents

Control of current spreading in semiconductor laser diodes

Info

Publication number
EP1247316A4
EP1247316A4 EP00980351A EP00980351A EP1247316A4 EP 1247316 A4 EP1247316 A4 EP 1247316A4 EP 00980351 A EP00980351 A EP 00980351A EP 00980351 A EP00980351 A EP 00980351A EP 1247316 A4 EP1247316 A4 EP 1247316A4
Authority
EP
European Patent Office
Prior art keywords
control
semiconductor laser
laser diodes
current spreading
spreading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00980351A
Other languages
German (de)
French (fr)
Other versions
EP1247316A2 (en
Inventor
John C Connolly
Louis A Dimarco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CONNOLLY, JOHN C.
Dimarco Louis A
Trumpf Photonics Inc
Original Assignee
Trumpf Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Photonics Inc filed Critical Trumpf Photonics Inc
Publication of EP1247316A2 publication Critical patent/EP1247316A2/en
Publication of EP1247316A4 publication Critical patent/EP1247316A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
EP00980351A 1999-11-12 2000-11-10 Control of current spreading in semiconductor laser diodes Withdrawn EP1247316A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16486499P 1999-11-12 1999-11-12
US164864P 1999-11-12
PCT/US2000/031048 WO2001035506A1 (en) 1999-11-12 2000-11-10 Control of current spreading in semiconductor laser diodes

Publications (2)

Publication Number Publication Date
EP1247316A2 EP1247316A2 (en) 2002-10-09
EP1247316A4 true EP1247316A4 (en) 2006-01-04

Family

ID=22596409

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00980351A Withdrawn EP1247316A4 (en) 1999-11-12 2000-11-10 Control of current spreading in semiconductor laser diodes

Country Status (5)

Country Link
EP (1) EP1247316A4 (en)
JP (1) JP2003515250A (en)
AU (1) AU1762601A (en)
CA (1) CA2388858A1 (en)
WO (1) WO2001035506A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100964399B1 (en) * 2003-03-08 2010-06-17 삼성전자주식회사 Semiconductor laser diode and semiconductor laser diode assembly adopting the same
US8597962B2 (en) 2010-03-31 2013-12-03 Varian Semiconductor Equipment Associates, Inc. Vertical structure LED current spreading by implanted regions
CN111082314B (en) * 2019-12-11 2021-10-08 中国科学院长春光学精密机械与物理研究所 Semiconductor laser and preparation method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129482A (en) * 1987-11-16 1989-05-22 Nippon Telegr & Teleph Corp <Ntt> Changing method into mixed crystal of superlattice
EP0475330A2 (en) * 1990-09-12 1992-03-18 Hughes Aircraft Company Ridge-waveguide buried heterostructure laser and method of fabrication
US5219785A (en) * 1989-01-27 1993-06-15 Spectra Diode Laboratories, Inc. Method of forming current barriers in semiconductor lasers
US5497391A (en) * 1993-04-20 1996-03-05 Xerox Corporation Monolithic array of independently addressable diode lasers
US5637511A (en) * 1993-02-01 1997-06-10 Kurihara; Kaori Vertical-to-surface transmission electro-photonic device and method for fabricating the same
US5804461A (en) * 1994-12-22 1998-09-08 Polaroid Corporation Laser diode with an ion-implant region
EP0905836A2 (en) * 1997-08-29 1999-03-31 Xerox Corporation Deep native oxide confined ridge waveguide semiconductor lasers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696784A (en) * 1996-04-19 1997-12-09 Opto Power Corporation Reduced mode laser and method of fabrication

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129482A (en) * 1987-11-16 1989-05-22 Nippon Telegr & Teleph Corp <Ntt> Changing method into mixed crystal of superlattice
US5219785A (en) * 1989-01-27 1993-06-15 Spectra Diode Laboratories, Inc. Method of forming current barriers in semiconductor lasers
EP0475330A2 (en) * 1990-09-12 1992-03-18 Hughes Aircraft Company Ridge-waveguide buried heterostructure laser and method of fabrication
US5637511A (en) * 1993-02-01 1997-06-10 Kurihara; Kaori Vertical-to-surface transmission electro-photonic device and method for fabricating the same
US5497391A (en) * 1993-04-20 1996-03-05 Xerox Corporation Monolithic array of independently addressable diode lasers
US5804461A (en) * 1994-12-22 1998-09-08 Polaroid Corporation Laser diode with an ion-implant region
EP0905836A2 (en) * 1997-08-29 1999-03-31 Xerox Corporation Deep native oxide confined ridge waveguide semiconductor lasers

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 378 (E - 809) 22 August 1989 (1989-08-22) *
See also references of WO0135506A1 *

Also Published As

Publication number Publication date
WO2001035506A9 (en) 2002-05-23
CA2388858A1 (en) 2001-05-17
AU1762601A (en) 2001-06-06
WO2001035506A1 (en) 2001-05-17
JP2003515250A (en) 2003-04-22
EP1247316A2 (en) 2002-10-09

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 20020611

AK Designated contracting states

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Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

AX Request for extension of the european patent

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RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: DIMARCO, LOUIS A.

Owner name: TRUMPF PHOTONICS, INC.

Owner name: CONNOLLY, JOHN C.

A4 Supplementary search report drawn up and despatched

Effective date: 20051118

RIC1 Information provided on ipc code assigned before grant

Ipc: H01S 5/20 20000101ALI20051114BHEP

Ipc: H01S 5/22 20000101AFI20010521BHEP

STAA Information on the status of an ep patent application or granted ep patent

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18D Application deemed to be withdrawn

Effective date: 20060713