EP1238411A1 - Device and method for treating substrates - Google Patents

Device and method for treating substrates

Info

Publication number
EP1238411A1
EP1238411A1 EP00987373A EP00987373A EP1238411A1 EP 1238411 A1 EP1238411 A1 EP 1238411A1 EP 00987373 A EP00987373 A EP 00987373A EP 00987373 A EP00987373 A EP 00987373A EP 1238411 A1 EP1238411 A1 EP 1238411A1
Authority
EP
European Patent Office
Prior art keywords
diffuser
treatment
substrates
fluid
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00987373A
Other languages
German (de)
French (fr)
Inventor
Torsten Radtke
Klaus Wolke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steag Microtech GmbH
Original Assignee
Steag Microtech GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steag Microtech GmbH filed Critical Steag Microtech GmbH
Publication of EP1238411A1 publication Critical patent/EP1238411A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Definitions

  • the present invention relates to an apparatus and a method for treating substrates in a treatment tank filled with treatment fluid, in which the fluid is introduced into the treatment tank with a diffuser.
  • the substrates can be inserted into the container together with a substrate carrier.
  • the substrates e.g. Semiconductor wafers are inserted into the substrate carrier before the wet treatment.
  • the semiconductor wafers are then inserted together with the substrate carrier into the container containing the treatment fluid.
  • treatment fluid is continuously introduced into the treatment basin via a diffuser arranged below the wafers.
  • the object of the invention is to provide a device and a method for optimizing the flow conditions, in particular homogenizing the flows on the substrates to be treated.
  • this object is achieved in a device of the type mentioned in the introduction in that the distance between the diffuser and the substrates is adjustable.
  • Uniform flow conditions in the pool lead to a more uniform treatment of the substrates, which prevents damage to them.
  • the distance between the diffuser and the substrates is reduced, it is possible to reduce the radiation pressure of the diffuser, as a result of which a more uniform flow is achieved.
  • the diffuser is displaceable in the treatment basin.
  • a distance adjustment between diffuser and substrates can be achieved in a simple and efficient manner.
  • access to the diffuser for maintenance and / or replacement purposes is made considerably easier due to the movability.
  • Such maintenance and / or replacement of the diffuser is necessary, for example, if foreign particles accumulate on the diffuser, which can lead to contamination of the treated substrates.
  • Substrate holding devices can generally be moved in the treatment basin for inserting and removing the substrates from the treatment basin. Their positioning for setting the distance is therefore particularly simple.
  • the device preferably has a control device for controlling the position of the diffuser and / or the substrate holding device, to make a distance adjustment adapted to the process conditions.
  • the diffuser has a diffuser plate which is curved cylindrically to the substrates and has outlet openings, the cylinder axis of which runs perpendicular to the substrate planes.
  • the cylindrical, curved diffuser plate enables the treatment fluid to be introduced into the treatment basin over a wide area.
  • the inlet pressure can be reduced compared to a diffuser with a smaller inlet area, which leads to better uniformity of the flow.
  • the curvature from the diffuser results in individual flows that divide in a fan-like manner. This prevents the currents and eddies from crossing each other, which impair the uniformity of the overall flow.
  • the shape of the diffuser plate is preferably symmetrical to its apex.
  • the outlet openings are preferably also arranged symmetrically to the apex.
  • a baffle plate is preferably provided opposite an inlet of the diffuser.
  • the diffuser has a diffuser plate which is curved cylindrically toward the substrates and has outlet openings whose cylinder axis is perpendicular to the substrate planes.
  • the cylindrical curvature of the diffuser plate enables treatment fluid to be introduced into the treatment basin over a wide area. Beyond that that there are no intersecting currents and thus eddies, which leads to a very even flow.
  • the shape of the diffuser plate is preferably symmetrical to its apex.
  • the exit points are preferably also arranged symmetrically to the apex.
  • a baffle plate that is arranged opposite an inlet of the diffuser is preferably provided.
  • the object on which the invention is based is achieved in a method for treating substrates in a treatment tank filled with treatment fluid, in which the fluid is introduced into the treatment tank with a diffuser, in that the distance between the diffuser and the substrate is dependent on the Process conditions is set.
  • the flow settings within the treatment basin, and thus the treatment successes achieved, are homogenized by the distance settings, with changing process conditions being taken into account.
  • the distance is set depending on the viscosity of the fluid, since this has a great influence on the flow within the treatment basin.
  • the distance is preferably set by moving the diffuser in the treatment basin.
  • the distance is set by moving a substrate holding device in the treatment basin.
  • the device and the method according to the invention are particularly suitable for the wet treatment of semiconductor wafers, in particular in so-called single treatment tanks or single tank tools, in which different treatment fluids are used within a single tank to treat the wafers.
  • the invention is explained in more detail below on the basis of preferred exemplary embodiments with reference to the figures; show it:
  • Figure 1 is a schematic sectional view through a treatment device according to the present invention.
  • FIG. 2 is a schematic side view of a diffuser according to the present invention
  • FIG. 3 shows a schematic side view of the diffuser according to FIG. 2 with a viewing angle rotated by 90 degrees
  • Figure 4 is a schematic perspective view of a diffuser according to the present invention.
  • Figure 1 shows a device 1 for treating substrates 2, such as Semiconductor wafers with a treatment basin 3 and an overflow 4 surrounding the treatment basin. A large number of wafers are accommodated one behind the other in the treatment basin in the viewing direction according to FIG.
  • the treatment basin 3 has side walls 6, 7, which expand conically upwards, and a bottom wall 8.
  • a carrier receptacle 10 for accommodating a wafer carrier (not shown in detail) is provided in a lower region of the treatment basin 3.
  • a diffuser unit 12 is also provided in the lower region of the treatment basin 3.
  • the diffuser unit 12 has a diffuser tube 13 extending through the bottom wall 8 and a diffuser head 14 arranged above the bottom wall 8.
  • the diffuser head 14 forms a chamber 16 which is delimited in the direction of the treatment basin by a cylindrically curved diffuser plate 18 with outlet openings 20, which can best be seen in FIGS. 2-4.
  • the cylinder axis of the diffuser plate 18 extends into the sheet plane and thus runs perpendicular to the wafers.
  • the outlet openings 20 are spaced apart from one another in the curvature direction by a 10-degree angular distance. Of course, other angular distances between the openings 20 are also possible.
  • the distance between the outlet openings transverse to the direction of curvature is on the distance of the wafers receivable on the treatment basin is adjusted such that the openings each point into the spaces formed between the wafers in order to provide a targeted flow into these spaces.
  • the diffuser plate 18 has a shape symmetrical to its apex 22 in the direction of curvature and the openings 20 are also arranged symmetrically to the apex 22.
  • the diffuser tube 13 extends essentially perpendicular to the apex 22 of the curved diffuser plate and has an opening 23 pointing thereon.
  • a baffle element 24 is provided in the form of a baffle plate.
  • the baffle plate 14 can be fastened to the curved diffuser plate 18, as shown in FIG. 1, or it can be fastened to the diffuser tube 13 or to a base plate opposite the diffuser plate via suitable fastening and spacing elements 26, as shown in FIGS. 4 is shown.
  • the diffuser tube 13 is longitudinally displaceable through the bottom 8 of the treatment basin 3, as shown by the double arrow 28 in FIG. 1.
  • the diffuser head 14 fixedly attached to it is displaced longitudinally within the treatment basin 3, and the distance between the semiconductor wafers 2 accommodated in the treatment basin 3 and the diffuser plate 18 is changed.
  • the diffuser tube is guided through a suitable screw connection 30 and an O-ring 31 and fastened to the basin 3.
  • a carrier or carrier (not shown in more detail).
  • a treatment fluid such as, for example, diluted TF.ussic acid (DHF)
  • DHF diluted TF.ussic acid
  • the fluid is introduced through the diffuser tube 13 into the chamber 16 of the diffuser head 14.
  • At the Baffle plate 24 deflects the fluic and distributes it evenly in chamber 16. Then es emerges through the openings 20 in the curved diffuser plate 18.
  • a fluid flow diverging in a fan-like manner is generated within the treatment basin 3, as is shown schematically in FIG. 1.
  • the distance between the wafers 2 and the diffuser unit 12 is adjusted by longitudinally displacing the diffuser tube 13.
  • a look-up table can be used, for example, in which various distance values between diffuser plate 18 and wafer 2 are given for different viscosities of the treatment fluid, size and shape of the wafer 2, the wafer carrier and / or the container 3.
  • the distance can also be set depending on other process parameters, such as the treatment fluid pressure, whereby a uniform fluid flow is achieved on the wafer surfaces.
  • the invention has been described above with reference to a preferred exemplary embodiment, but without being restricted to this specific exemplary embodiment.
  • the invention is also not restricted to a device in which the wafers are inserted into the treatment tank with a wafer carrier. Different forms of the diffuser unit and the treatment basin are of course also possible.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

In order to optimize flow conditions in a device (1) for treating substrates (2) in a treatment basin (3) that is filled with treatment fluid, said device comprising at least one diffusor (12) to introduce the fluid into the treatment basin (3), the distance between the diffusor (12) and the substrates (2) can be regulated. The invention also relates to a method for regulating said distance. According to an additional measure to improve flow conditions in said device, the diffusor (12) has a plate (18) that is curved cylindrically toward the substrates (2) and outlets (20), the cylindrical axes thereof extending perpendicularly in relation to the planes of the substrates.

Description

Vorrichtung und Verfahren zum Behandeln von Suhstr^on Device and method for treating Suhst r ^ o n
Die vorliegende Erfindung bezieht sich auf eine Vorrichtung und ein Verfahren zum Behandeln von Substraten in einem mit Behandlungsfluid gefüllten Be- handlungsbecken, bei dem das Fluid mit einem Diffusor in das Behandlungsbecken eingeleitet wird.The present invention relates to an apparatus and a method for treating substrates in a treatment tank filled with treatment fluid, in which the fluid is introduced into the treatment tank with a diffuser.
Bei Fertigungsprozessen, insbesondere in der Halbleiterindustrie, ist es notwendig Substrate mit einem Fluid zu behandeln. Ein Beispiel hierfür ist die Naßbehandlung von Substraten bei der Chipfertigung.In manufacturing processes, especially in the semiconductor industry, it is necessary to treat substrates with a fluid. An example of this is the wet treatment of substrates in chip production.
Aus der EP-B-0 385 536 und der DE 197 03 646 sind Vorrichtungen zur Naßbehandlung von Substraten in einem ein Behandlungsfluid enthaltenden Behälter bekannt, bei denen die Substrate zusammen mit einem Substratträger in den Behälter einsetzbar sind. Die Substrate, z.B. Halbleiterwafer, werden vor der Naßbehandlung in den Substratträger eingesetzt. Nachfolgend werden die Halbleiterwafer zusammen mit dem Substratträger in den das Behandlungsfluid enthaltenden Behälter eingesetzt. Während der Naßbehandlung der Wafer wird kontinuierlich Behandlungsfluid über einen unterhalb der Wafer angeordneten Diffusor in das Behandlungsbecken eingeleitet.From EP-B-0 385 536 and DE 197 03 646 devices for wet treatment of substrates in a container containing a treatment fluid are known, in which the substrates can be inserted into the container together with a substrate carrier. The substrates, e.g. Semiconductor wafers are inserted into the substrate carrier before the wet treatment. The semiconductor wafers are then inserted together with the substrate carrier into the container containing the treatment fluid. During the wet treatment of the wafers, treatment fluid is continuously introduced into the treatment basin via a diffuser arranged below the wafers.
Dabei ist es für eine gleichförmige Behandlung der Substrate wichtig, auf den Substratoberflächen gleichmäßige Strömungsverhältnisse vorzusehen. Diese hängen jedoch wesentlich von der Viskosität des verwendeten Behandlungs- fluids, der Anordnung der Element im Behandlungsbecken, sowie der Form und Größe der zu behandelnden Substrate ab. Bei den oben beschriebenen Vorrichtungen ist eine Anpassung der Strömungsverhältnisse innerhalb des Behandlungsbeckens aufgrund sich ändernder Prozeßbedingungen, wie beispielsweise der Viskosität des Behandlungsfluids bzw. der Größe und Form der Wafer, nicht möglich, so daß sich verändernde Prozeßbedingungen un- gleichförmige StrömungsverhältnTsse^auf derT Oberflächen^er Substrate zur Folge haben. Ausgehend von den oben genannten Vorrichtungen liegt der Erfindung die Aufgabe zugrunde, eine Vorrichtung und ein Verfahren zur Optimierung der Strömungsverhältnisse, insbesondere eine Homogenisierung der Strömungen auf den zu behandelnden Substraten vorzusehen.For a uniform treatment of the substrates, it is important to provide uniform flow conditions on the substrate surfaces. However, these depend essentially on the viscosity of the treatment fluid used, the arrangement of the elements in the treatment basin, and the shape and size of the substrates to be treated. In the devices described above, it is not possible to adapt the flow conditions within the treatment basin due to changing process conditions, such as, for example, the viscosity of the treatment fluid or the size and shape of the wafers, so that changing process conditions result in non-uniform flow conditions on the surfaces he result in substrates. Starting from the above-mentioned devices, the object of the invention is to provide a device and a method for optimizing the flow conditions, in particular homogenizing the flows on the substrates to be treated.
Erfindungsgemäß wird diese Aufgabe bei einer Vorrichtung der eingangs genannten Art dadurch gelöst, daß der Abstand zwischen dem Diffusor und den Substraten einstellbar ist. Hierdurch ist eine individuelle Anpassung an die jeweiligen Prozeßbedingungen, wie beispielsweise die Viskosität des Be- handlungsfluids oder die Anordnung der Elemente im Tank, die sich beispielsweise mit unterschiedlichen Substratträgern verändern kann, möglich. Gleichförmige Strömungsverhältnisse im Becken führen zu einer gleichmäßigeren Behandlung der Substrate, wodurch deren Beschädigung vermieden wird. Insbesondere ist es bei einer Abstandsverringerung zwischen Diffusor und Substraten möglich, den Abstrahldruck des Diffusors zu verringern, wodurch eine gleichförmigere Strömung erreicht wird.According to the invention, this object is achieved in a device of the type mentioned in the introduction in that the distance between the diffuser and the substrates is adjustable. This allows individual adaptation to the respective process conditions, such as the viscosity of the treatment fluid or the arrangement of the elements in the tank, which can change, for example, with different substrate carriers. Uniform flow conditions in the pool lead to a more uniform treatment of the substrates, which prevents damage to them. In particular, if the distance between the diffuser and the substrates is reduced, it is possible to reduce the radiation pressure of the diffuser, as a result of which a more uniform flow is achieved.
Gemäß einer besonders bevorzugten Ausführungsform der Erfindung ist der Diffusor im Behandlungsbecken verschiebbar. Hierdurch kann auf einfache und effiziente Weise eine Abstandseinstellung zwischen Diffusor und Substraten erreicht werden. Darüber hinaus wird der Zugriff auf den Diffusor zu Wartungs- und/oder Austauschzwecken durch die Verschiebbarkeit erheblich erleichtert. Eine derartige Wartung und/oder ein Austausch des Diffusors ist beispielsweise notwendig, wenn sich Fremdpartikel auf dem Diffusor sam- mein, die zu Verunreinigungen der behandelten Substrate führen können.According to a particularly preferred embodiment of the invention, the diffuser is displaceable in the treatment basin. In this way, a distance adjustment between diffuser and substrates can be achieved in a simple and efficient manner. In addition, access to the diffuser for maintenance and / or replacement purposes is made considerably easier due to the movability. Such maintenance and / or replacement of the diffuser is necessary, for example, if foreign particles accumulate on the diffuser, which can lead to contamination of the treated substrates.
Gemäß einer weiteren Ausführungsform der Erfindung ist vorzugsweise dieAccording to a further embodiment of the invention, the
Position einer Substrat-Halteeinrichtung im Behandlungsbecken einstellbar.Position of a substrate holding device in the treatment basin adjustable.
Substrat-Halteeinrichtungen sind in der Regel in dem Behandlungsbecken zum Einsetzen und Herausheben der Substrate aus dem Behandlungsbecken bewegbar. Daher ist deren Positionierung zur Abstandseinstellung besonders einfach. Vorzugsweise weist die Vorrichtung eine Steuereinrichtung zum Steuern der Position des Diffusors und/oder der Substrat-Halteeinrichtung auf, um eine an die Prozeßbed ngungen angepaßte Abstandseinstellung vorzunehmen.Substrate holding devices can generally be moved in the treatment basin for inserting and removing the substrates from the treatment basin. Their positioning for setting the distance is therefore particularly simple. The device preferably has a control device for controlling the position of the diffuser and / or the substrate holding device, to make a distance adjustment adapted to the process conditions.
Gemäß einer weiteren bevorzugten Ausführungsform der Erfindung weist der Diffusor eine zu den Substraten zylindrisch gewölbte Diffusorplatte mit Austrittsöffnungen auf, deren Zylinderachse senkrecht zu den Substratebenen verläuft. Durch die zylindrisch gewölbte Diffusorplatte ist ein breitflächiges Einleiten des Behandlungsfluids in das Behandlungsbecken möglich. Hierdurch kann der Einleitdruck gegenüber einem Diffusor mit einer geringeren Einleitfläche verringert werden, was zu einer besseren Gleichförmigkeit der Strömung führt. Darüber hinaus ergeben sich durch die Wölbung vom Diffusor ausgehende, fächerartig auseinanderlaufende Einzelströmungen. Hierdurch werden ein Überkreuzen der Strömungen und Verwirbelungen, die die Gleichförmigkeit der Gesamtströmung beeinträchtigen, verhindert.According to a further preferred embodiment of the invention, the diffuser has a diffuser plate which is curved cylindrically to the substrates and has outlet openings, the cylinder axis of which runs perpendicular to the substrate planes. The cylindrical, curved diffuser plate enables the treatment fluid to be introduced into the treatment basin over a wide area. As a result, the inlet pressure can be reduced compared to a diffuser with a smaller inlet area, which leads to better uniformity of the flow. In addition, the curvature from the diffuser results in individual flows that divide in a fan-like manner. This prevents the currents and eddies from crossing each other, which impair the uniformity of the overall flow.
Für eine gleichmäßige Strömung innerhalb des Behandlungsbeckens ist die Form der Diffusorplatte vorzugsweise zu ihrem Scheitelpunkt symmetrisch. Vorzugsweise sind auch die Austrittsöffnungen symmetrisch zum Scheitelpunkt angeordnet.For a uniform flow within the treatment basin, the shape of the diffuser plate is preferably symmetrical to its apex. The outlet openings are preferably also arranged symmetrically to the apex.
Um eine möglichst gleichmäßige Druckverteilung an allen Austrittsöffnungen zu erreichen, ist vorzugsweise eine gegenüber einem Einlaß des Diffusors angeordnete Prallplatte vorgesehen.In order to achieve the most uniform possible pressure distribution at all outlet openings, a baffle plate is preferably provided opposite an inlet of the diffuser.
Die oben genannte Aufgabe wird bei einer Vorrichtung der eingangs genannten Art auch dadurch gelöst, daß der Diffusor eine zu den Substraten hin zylindrisch gewölbte Diffusorplatte mit Austrittsöffnungen aufweist, deren Zylin- derachse senkrecht zu den Substratebenen verläuft. Wie schon erwähnt, ermöglicht die zylindrische Wölbung der Diffusorplatte ein breitflächiges Einlei- ten von Behandlungsfluid in das Behandlungsbecken. Darüber hinaus wird daß keine sich überkreuzenden Strömungen und somit Verwirbelungen entstehen, was zu einer sehr gleichmäßigen Strömung führt. Für eine möglichst gleichmäßige Strömung innerhalb des Behandlungsbek- kens ist die Form der Diffusorplatte vorzugsweise zu ihrem Scheitelpunkt symmetrisch. Vorzugsweise sind auch die Austrittspunkte symmetrisch zum Scheitelpunkt angeordnet.The above-mentioned object is also achieved in a device of the type mentioned at the outset in that the diffuser has a diffuser plate which is curved cylindrically toward the substrates and has outlet openings whose cylinder axis is perpendicular to the substrate planes. As already mentioned, the cylindrical curvature of the diffuser plate enables treatment fluid to be introduced into the treatment basin over a wide area. Beyond that that there are no intersecting currents and thus eddies, which leads to a very even flow. For a flow that is as uniform as possible within the treatment basin, the shape of the diffuser plate is preferably symmetrical to its apex. The exit points are preferably also arranged symmetrically to the apex.
Um eine möglichst gleichmäßige Druckverteilung an allen Austrittsöffnungen der Diffusorplatte vorzusehen, ist vorzugsweise eine gegenüber einem Einlaß des Diffusors angeordnete Prallplatte vorgesehen.In order to provide a pressure distribution that is as uniform as possible at all outlet openings of the diffuser plate, a baffle plate that is arranged opposite an inlet of the diffuser is preferably provided.
Die der Erfindung zugrunde liegende Aufgabe wird bei einem Verfahren zum Behandeln von Substraten in einem mit Behandlungsfluid gefülltem Behandlungsbecken, bei dem das Fluid mit einem Diffusor in das Behandlungsbecken eingeleitet wird, dadurch gelöst, daß der Anstand zwischen Diffusor und Sub- strat in Abhängigkeit von den Prozeßbedingungen eingestellt wird. Durch die Abstandseinstellungen werden die Strömungsbedingungen innerhalb des Behandlungsbeckens, und somit die erzielten Behandlungserfolge homogenisiert, wobei auf sich ändernde Prozeßbedingungen eingegangen wird.The object on which the invention is based is achieved in a method for treating substrates in a treatment tank filled with treatment fluid, in which the fluid is introduced into the treatment tank with a diffuser, in that the distance between the diffuser and the substrate is dependent on the Process conditions is set. The flow settings within the treatment basin, and thus the treatment successes achieved, are homogenized by the distance settings, with changing process conditions being taken into account.
Bei einer besonders bevorzugten Ausführungsform der Erfindung wird der Abstand in Abhängigkeit von der Viskosität des Fluids eingestellt, da diese einen großen Einfluß auf die Strömung innerhalb des Behandlungsbeckens besitzt. Vorzugsweise wird der Abstand durch Verschieben des Diffusors im Behandlungsbecken eingestellt. Gemäß einer weiteren Ausführungsform der Erfin- dung wird der Abstand durch Verschieben einer Substrat-Halteeinrichtung im Behandlungsbecken eingestellt.In a particularly preferred embodiment of the invention, the distance is set depending on the viscosity of the fluid, since this has a great influence on the flow within the treatment basin. The distance is preferably set by moving the diffuser in the treatment basin. According to a further embodiment of the invention, the distance is set by moving a substrate holding device in the treatment basin.
Die erfindungsgemäße Vorrichtung und das erfindungsgemäße Verfahren eignen sich insbesondere für die Naßbehandlung von Halbleiterwafern, insbe- sondere in sogenannten Einzelbehandlungsbecken bzw. Single-Tank-Tools, in denen unterschiedliche Behandlungsfluide innerhalb eines einzelnen Beckens zur Behandlung der Wafer eingesetzt werden. Die Erfindung wird nachfolgend anhand bevorzugter Ausführungsbeispiele unter Bezugnahme auf die Figuren näher erläutert; es zeigen:The device and the method according to the invention are particularly suitable for the wet treatment of semiconductor wafers, in particular in so-called single treatment tanks or single tank tools, in which different treatment fluids are used within a single tank to treat the wafers. The invention is explained in more detail below on the basis of preferred exemplary embodiments with reference to the figures; show it:
Figur 1 eine schematische Schnittdarstellung durch eine Behandlungs- Vorrichtung gemäß der vorliegenden Erfindung;Figure 1 is a schematic sectional view through a treatment device according to the present invention;
Figur 2 eine schematische Seitenansicht eines Diffusors gemäß der vorliegenden Erfindung; Figur 3 eine schematische Seitenansicht des Diffusors gemäß Figur 2 mit einem um 90 Grad gedrehten Blickwinkel; Figur 4 eine schematische, perspektivische Ansicht eines Diffusors gemäß der vorliegenden Erfindung.Figure 2 is a schematic side view of a diffuser according to the present invention; FIG. 3 shows a schematic side view of the diffuser according to FIG. 2 with a viewing angle rotated by 90 degrees; Figure 4 is a schematic perspective view of a diffuser according to the present invention.
Figur 1 zeigt eine Vorrichtung 1 zum Behandeln von Substraten 2, wie z.B. Halbleiterwafem mit einem Behandlungsbecken 3 und einem das Behand- lungsbecken umgebenden Überlauf 4. Eine Vielzahl von Wafern ist in Blickrichtung gemäß Figur 1 hintereinanderliegend in dem Behandlungsbecken aufgenommen. Das Behandlungsbecken 3 weist sich konisch nach oben erweiternde Seitenwände 6,7, sowie eine Bodenwand 8 auf. Eine Carrierauf- nahme 10 zur Aufnahme eines nicht näher dargestellten Wafercarriers ist in einem unterem Bereich des Behandlungsbeckens 3 vorgesehen.Figure 1 shows a device 1 for treating substrates 2, such as Semiconductor wafers with a treatment basin 3 and an overflow 4 surrounding the treatment basin. A large number of wafers are accommodated one behind the other in the treatment basin in the viewing direction according to FIG. The treatment basin 3 has side walls 6, 7, which expand conically upwards, and a bottom wall 8. A carrier receptacle 10 for accommodating a wafer carrier (not shown in detail) is provided in a lower region of the treatment basin 3.
Eine Diffusoreinheit 12 ist ebenfalls im unteren Bereich des Behandlungsbek- kens 3 vorgesehen. Die Diffusoreinheit 12 weist ein sich durch die Bodenwand 8 erstreckendes Diffusorrohr 13 und einen oberhalb der Bodenwand 8 angeordneten Diffusorkopf 14 auf. Der Diffusorkopf 14 bildet eine Kammer 16, die in Richtung des Behandlungsbeckens durch eine zylindrisch gewölbte Diffusorplatte 18 mit Auslaßöffnungen 20 begrenzt ist, die am besten in den Figuren 2-4 zu sehen sind. Die Zylinderachse der Diffusorplatte 18 erstreckt sich gemäß Figur 1 in die Blattebene hinein und verläuft somit senkrecht zu den Wafern. Wie in Figur 2 zu erkennen ist, sind die Auslaßöffnungen 20 in Wölbungsrichtung mit einem 10-Grad-Winkelabstand voneinander beabstandet. Natürlich sind auch andere Winkelabstände zwischen den Öffnungen 20 möglich. Der Abstand der Auslaßöffnungen quer zur Wölbungsrichtung ist an den Abstand der an dem Behandlungsbecken aufnehmbaren Wafer derart angepaßt, daß die Öffnungen jeweils in die zwischen den Wafern gebildeten Zwischenräume weisen, um eine gezielte Strömung in diese Zwischenräume vorzusehen. Die Diffusorplatte 18 besitzt in Wölbungsrichtung eine zu ihrem Scheitelpunkt 22 symmetrische Form und die Öffnungen 20 sind ebenfalls symmetrisch zum Scheitelpunkt 22 angeordnet.A diffuser unit 12 is also provided in the lower region of the treatment basin 3. The diffuser unit 12 has a diffuser tube 13 extending through the bottom wall 8 and a diffuser head 14 arranged above the bottom wall 8. The diffuser head 14 forms a chamber 16 which is delimited in the direction of the treatment basin by a cylindrically curved diffuser plate 18 with outlet openings 20, which can best be seen in FIGS. 2-4. According to FIG. 1, the cylinder axis of the diffuser plate 18 extends into the sheet plane and thus runs perpendicular to the wafers. As can be seen in FIG. 2, the outlet openings 20 are spaced apart from one another in the curvature direction by a 10-degree angular distance. Of course, other angular distances between the openings 20 are also possible. The distance between the outlet openings transverse to the direction of curvature is on the distance of the wafers receivable on the treatment basin is adjusted such that the openings each point into the spaces formed between the wafers in order to provide a targeted flow into these spaces. The diffuser plate 18 has a shape symmetrical to its apex 22 in the direction of curvature and the openings 20 are also arranged symmetrically to the apex 22.
Das Diffusorrohr 13 erstreckt sich im wesentlichen senkrecht zum Scheitelpunkt 22 der gewölbten Diffusorplatte und besitzt eine darauf weisende Öff- nung 23. Um eine möglichst gleichmäßige Druckverteilung eines durch das Diffusorrohr 13 in den Diffusorkopf 14 eingeleiteten Behandlungsfluid an allen Austrittsöffnungen 20 zu erreichen, ist zwischen der gewölbten Diffusorplatte und der Öffnung 23 des Diffusorrohrs 13 ein Prallelement 24 in der Form einer Prallplatte vorgesehen. Die Prallplatte 14 kann an der gewölbten Diffusor- platte 18 befestigt sein, wie in Figur 1 dargestellt ist, oder sie kann über geeignete Befestigungs- und Abstandselemente 26 am Diffusorrohr 13 bzw. einer der Diffusorplatte gegenüberliegenden Bodenplatte befestigt sein, wie in den Figuren 2-4 dargestellt ist.The diffuser tube 13 extends essentially perpendicular to the apex 22 of the curved diffuser plate and has an opening 23 pointing thereon. In order to achieve as uniform a pressure distribution as possible of a treatment fluid introduced through the diffuser tube 13 into the diffuser head 14 at all outlet openings 20, the arched diffuser plate and the opening 23 of the diffuser tube 13, a baffle element 24 is provided in the form of a baffle plate. The baffle plate 14 can be fastened to the curved diffuser plate 18, as shown in FIG. 1, or it can be fastened to the diffuser tube 13 or to a base plate opposite the diffuser plate via suitable fastening and spacing elements 26, as shown in FIGS. 4 is shown.
Das Diffusorrohr 13 ist durch den Boden 8 des Behandlungsbeckens 3 längs verschiebbar, wie durch den Doppelpfeil 28 in Figur 1 dargestellt ist. Durch eine Längsverschiebung des Diffusorrohrs wird der fest daran angebrachte Diffusorkopf 14 längs innerhalb des Behandlungsbeckens 3 verschoben, und der Abstand zwischen den in dem Behandlungsbecken 3 aufgenommenen Halbleiterwafern 2 und der Diffusorplatte 18 verändert.The diffuser tube 13 is longitudinally displaceable through the bottom 8 of the treatment basin 3, as shown by the double arrow 28 in FIG. 1. By longitudinally displacing the diffuser tube, the diffuser head 14 fixedly attached to it is displaced longitudinally within the treatment basin 3, and the distance between the semiconductor wafers 2 accommodated in the treatment basin 3 and the diffuser plate 18 is changed.
Das Diffusorrohr ist durch eine geeignete Verschraubung 30 und einen O-Ring 31 , geführt und am Becken 3 befestigt. Für eine Behandlung der Halbleiterwafer 2 werden diese mit einem nicht näher dargestellten Träger bzw. Carrier in das Behandlungsbecken 3 eingesetzt. Anschließend wird ein Behandlungs- fluid, wie beispielsweise verdünnt TF.ußsäure (DHF) durch die Diffusoreinheit 12 in das Behandlungsbecken 3 eingeleitet. Dabei wird das Fluid durch das Diffusorrohr 13 in die Kammer 16 des Diffusorkopfes 14 eingeleitet. An der Prallplatte 24 wird das Fluic umgelenkt und gleichmäßig in der Kammer 16 verteilt. Anschließend tritt eε durch die Öffnungen 20 in der gewölbten Diffusorplatte 18 aus. Dabei wirc eine fächerartig auseinanderlaufende Fluidströ- mung innerhalb des Behandlungsbeckens 3 erzeugt, wie schematisch in Figur 1 dargestellt ist. In Abhängigkeit von der Viskosität des verwendeten Be- handlungsfluids, der Form und Größe der zu behandelnden Halbleiterwafer 2, der Form des Trägers und/oder des Behandlungsbeckens 3 wird der Abstand zwischen den Wafern 2 und der Diffusoreinheit 12 durch Längsverschiebung des Diffusorrohrs 13 eingestellt. Für die Einstellung kann beispielsweise auf eine Nachschautabelle zurückgegriffen werden, in der verschiedenen Abstandswerte zwischen Diffusorplatte 18 und Wafer 2 für unterschiedliche Viskositäten des Behandlungsfluids, Größe und Formen der Wafer 2, des Wafer- carriers und/oder des Behälters 3 angegeben sind. Natürlich kann der Abstand auch in Abhängigkeit von anderen Prozeßparametern, wie zum Beispiel dem Behandlungsfluid-Druck eingestellt werden, wodurch eine gleichförmige Fluidströmung auf den Waferoberflächen erreicht wird.The diffuser tube is guided through a suitable screw connection 30 and an O-ring 31 and fastened to the basin 3. For a treatment of the semiconductor wafers 2, they are inserted into the treatment basin 3 with a carrier or carrier (not shown in more detail). A treatment fluid, such as, for example, diluted TF.ussic acid (DHF), is introduced into the treatment basin 3 through the diffuser unit 12. The fluid is introduced through the diffuser tube 13 into the chamber 16 of the diffuser head 14. At the Baffle plate 24 deflects the fluic and distributes it evenly in chamber 16. Then es emerges through the openings 20 in the curved diffuser plate 18. A fluid flow diverging in a fan-like manner is generated within the treatment basin 3, as is shown schematically in FIG. 1. Depending on the viscosity of the treatment fluid used, the shape and size of the semiconductor wafers 2 to be treated, the shape of the carrier and / or the treatment basin 3, the distance between the wafers 2 and the diffuser unit 12 is adjusted by longitudinally displacing the diffuser tube 13. For the setting, a look-up table can be used, for example, in which various distance values between diffuser plate 18 and wafer 2 are given for different viscosities of the treatment fluid, size and shape of the wafer 2, the wafer carrier and / or the container 3. Of course, the distance can also be set depending on other process parameters, such as the treatment fluid pressure, whereby a uniform fluid flow is achieved on the wafer surfaces.
Die Erfindung wurde zuvor anhand eines bevorzugten Ausführungsbeispiels beschrieben, ohne jedoch auf dieses spezielles Ausführungsbeispiel be- schränkt zu sein. Beispielsweise wäre es möglich den Abstand zwischen Diffusor und Wafer durch unterschiedliche Höhenpositionierung des Wafercarri- ers oder eines sonstigen Wafer-Halteelements vorzunehmen. Insbesondere ist die Erfindung auch nicht auf eine Vorrichtung beschränkt, bei der die Wafer mit einem Wafercarrier in das Behandlungsbecken eingesetzt werden. Natür- lieh sind auch unterschiedliche Formen der Diffusoreinheit sowie des Behandlungsbeckens möglich. The invention has been described above with reference to a preferred exemplary embodiment, but without being restricted to this specific exemplary embodiment. For example, it would be possible to set the distance between the diffuser and the wafer by means of different height positioning of the wafer carrier or another wafer holding element. In particular, the invention is also not restricted to a device in which the wafers are inserted into the treatment tank with a wafer carrier. Different forms of the diffuser unit and the treatment basin are of course also possible.

Claims

Patentansprüche claims
1. Vorrichtung (1 ) zum Behandeln von Substraten (2) in einem mit Behandlungsfluid gefüllten Behandlungsbecken (3), mit wenigstens einem Diffusor (12) zum Einleiten des Fluids in das Behandlungsbecken (3), dadurch gekennzeichnet, daß der Abstand zwischen dem Diffusor (12) und den Substraten (2) einstellbar ist.1. Device (1) for treating substrates (2) in a treatment tank filled with treatment fluid (3), with at least one diffuser (12) for introducing the fluid into the treatment tank (3), characterized in that the distance between the diffuser (12) and the substrates (2) is adjustable.
2. Vorrichtung (1 ) nach Anspruch 1 , dadurch gekennzeichnet, daß der Dif- fusor (12) im Behandlungsbecken (3) verschiebbar ist.2. Device (1) according to claim 1, characterized in that the diffuser (12) in the treatment basin (3) is displaceable.
3. Vorrichtung (1 ) nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Position einer Substrat-Halteeinrichtung im Behandlungsbecken (3) einstellbar ist.3. Device (1) according to claim 1 or 2, characterized in that the position of a substrate holding device in the treatment basin (3) is adjustable.
4. Vorrichtung (1 ) nach einem der vorhergehenden Ansprüche, gekennzeichnet durch eine Steuereinrichtung zum Steuern der Position des Diffusors (12) und/oder der Substrat-Halteeinrichtung.4. Device (1) according to one of the preceding claims, characterized by a control device for controlling the position of the diffuser (12) and / or the substrate holding device.
5. Vorrichtung (1 ) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Diffusor (12) eine zu den Substraten (2) hin zylindrisch gewölbte Diffusorplatte (18) mit Austrittsöffnungen (20) aufweist, deren Zylinderachse senkrecht zu den Substratebenen verläuft.5. Device (1) according to any one of the preceding claims, characterized in that the diffuser (12) has a diffuser plate (18) cylindrically curved towards the substrates (2) with outlet openings (20), the cylinder axis of which extends perpendicular to the substrate planes.
6. Vorrichtung (1 ) nach Anspruch 5, dadurch gekennzeichnet, daß die Form der Diffusorplatte (18) zu ihrem Scheitelpunkt (22) symmetrisch ist.6. The device (1) according to claim 5, characterized in that the shape of the diffuser plate (18) to its apex (22) is symmetrical.
7. Vorrichtung (1 ) nach Anspruch 6, dadurch gekennzeichnet, daß die Austrittsöffnungen (20) symmetrisch zum Scheitelpunkt (22) angeordnet sind. 7. The device (1) according to claim 6, characterized in that the outlet openings (20) are arranged symmetrically to the apex (22).
8. Vorrichtung (1 ) nach einem der vorhergehenden Ansprüche, gekennzeichnet durch eine gegenüber einem Einlaß des Diffusors angeordnete Prallplatte (24).8. Device (1) according to one of the preceding claims, characterized by a baffle plate (24) arranged opposite an inlet of the diffuser.
9. Vorrichtung (1 ) zum Behandeln von Substraten (2) in einem mit Behandlungsfluid gefüllten Behandlungsbecken (3), mit einem Diffusor (12) zum Einleiten des Fluids in das Behandlungsbecken (3), dadurch gekennzeichnet, daß der Diffusor (12) eine zu den Substraten (2) hin zylindrisch gewölbte Diffusorplatte (18) mit Austrittsöffnungen (20) aufweist, deren Zylinderachse senkrecht zu den Substratebenen verläuft.9. The device (1) for treating substrates (2) in a treatment tank filled with treatment fluid (3), with a diffuser (12) for introducing the fluid into the treatment tank (3), characterized in that the diffuser (12) has a cylindrically curved diffuser plate (18) with outlet openings (20) towards the substrates (2), the cylinder axis of which runs perpendicular to the substrate planes.
10. Vorrichtung (1 ) nach Anspruch 9, dadurch gekennzeichnet, daß die Form der Diffusorplatte (18) zu ihrem Scheitelpunkt (22) symmetrisch ist.10. The device (1) according to claim 9, characterized in that the shape of the diffuser plate (18) to its apex (22) is symmetrical.
1 1. Vorrichtung (1 ) nach Anspruch 10, dadurch gekennzeichnet, daß die1 1. Device (1) according to claim 10, characterized in that the
Austrittsöffnungen (20) symmetrisch zum Scheitelpunkt (22) angeordnet sind.Outlet openings (20) are arranged symmetrically to the apex (22).
12. Vorrichtung (1 ) nach einem der Ansprüche 9 bis 11 , gekennzeichnet durch eine gegenüber einem Einlaß des Diffusors angeordnete Prall- platte (24).12. Device (1) according to one of claims 9 to 11, characterized by a baffle plate (24) arranged opposite an inlet of the diffuser.
13. Verfahren zum Behandeln von Substraten in einem mit Behandlungsfluid gefüllten Behandlungsbecken, bei dem das Fluid mit einem Diffusor in das Behandlungsbecken eingeleitet wird, dadurch gekennzeichnet, daß der Abstand zwischen Diffusor und Substrat in Abhängigkeit von den Prozeßbedingungen eingestellt wird.13. A method for treating substrates in a treatment tank filled with treatment fluid, in which the fluid is introduced into the treatment tank with a diffuser, characterized in that the distance between the diffuser and the substrate is adjusted depending on the process conditions.
14. Verfahren nach Anspruch 13, dadurch gekennzeichnet, daß der Abstand in Abhängigkeit von der Viskosität des Fluids eingestellt wird. 14. The method according to claim 13, characterized in that the distance is set depending on the viscosity of the fluid.
15. Verfahren nach Anspruch 13 oder 14, dadurch gekennzeichnet, daß der Abstand durch Verschieben des Diffusors im Behandlungsbecken eingestellt wird.15. The method according to claim 13 or 14, characterized in that the distance is adjusted by moving the diffuser in the treatment tank.
16. Verfahren nach einem der Ansprüche 13 bis 15, dadurch gekennzeichnet, daß der Abstand durch Verschieben einer Substrat-Halteeinrichtung im Behandlungsbecken eingestellt wird. 16. The method according to any one of claims 13 to 15, characterized in that the distance is adjusted by moving a substrate holding device in the treatment tank.
EP00987373A 1999-12-14 2000-12-08 Device and method for treating substrates Withdrawn EP1238411A1 (en)

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DE19960241A DE19960241A1 (en) 1999-12-14 1999-12-14 Device and method for treating substrates
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PCT/EP2000/012428 WO2001045143A1 (en) 1999-12-14 2000-12-08 Device and method for treating substrates

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10313692B4 (en) * 2003-03-26 2005-06-23 Werner Rietmann Method for surface and / or depth treatment of at least one semiconductor substrate and Tauchbadvorrichtung thereto
DE102010028883A1 (en) * 2010-05-11 2011-11-17 Dürr Ecoclean GmbH process vessels

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3259049A (en) * 1962-12-14 1966-07-05 V & A Plating Supplies Inc Gas agitating device
NL8900480A (en) * 1989-02-27 1990-09-17 Philips Nv METHOD AND APPARATUS FOR DRYING SUBSTRATES AFTER TREATMENT IN A LIQUID
US5069235A (en) * 1990-08-02 1991-12-03 Bold Plastics, Inc. Apparatus for cleaning and rinsing wafers
JP3167317B2 (en) * 1990-10-18 2001-05-21 株式会社東芝 Substrate processing apparatus and method
JPH05291228A (en) * 1992-04-07 1993-11-05 Fujitsu Ltd Apparatus and method for cleaning of wafer
JP3194209B2 (en) * 1992-11-10 2001-07-30 東京エレクトロン株式会社 Cleaning equipment
US5503171A (en) * 1992-12-26 1996-04-02 Tokyo Electron Limited Substrates-washing apparatus
US5372652A (en) * 1993-06-14 1994-12-13 International Business Machines Corporation Aerosol cleaning method
KR100236412B1 (en) * 1993-08-18 1999-12-15 다카시마 히로시 Cleaning apparatus of semiconductor process
US5489341A (en) * 1993-08-23 1996-02-06 Semitool, Inc. Semiconductor processing with non-jetting fluid stream discharge array
AU7923894A (en) * 1993-09-22 1995-04-10 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid
US5656097A (en) * 1993-10-20 1997-08-12 Verteq, Inc. Semiconductor wafer cleaning system
US5950327A (en) * 1996-07-08 1999-09-14 Speedfam-Ipec Corporation Methods and apparatus for cleaning and drying wafers
DE19644253A1 (en) * 1996-10-24 1998-05-07 Steag Micro Tech Gmbh Device for treating substrates
JPH1126423A (en) * 1997-07-09 1999-01-29 Sugai:Kk Method and apparatus for processing semiconductor wafer and the like
US6539963B1 (en) * 1999-07-14 2003-04-01 Micron Technology, Inc. Pressurized liquid diffuser
KR20020020081A (en) * 2000-09-07 2002-03-14 윤종용 Method for cleaning of polishing pad conditioner and apparatus for performing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0145143A1 *

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