EP1180801A2 - Optical semiconductor module - Google Patents
Optical semiconductor module Download PDFInfo
- Publication number
- EP1180801A2 EP1180801A2 EP01124274A EP01124274A EP1180801A2 EP 1180801 A2 EP1180801 A2 EP 1180801A2 EP 01124274 A EP01124274 A EP 01124274A EP 01124274 A EP01124274 A EP 01124274A EP 1180801 A2 EP1180801 A2 EP 1180801A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- optical
- resin
- guiding medium
- photosensor
- semiconductor module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4251—Sealed packages
- G02B6/4253—Sealed packages by embedding housing components in an adhesive or a polymer material
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/4277—Protection against electromagnetic interference [EMI], e.g. shielding means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/407—Optical elements or arrangements indirectly associated with the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4239—Adhesive bonding; Encapsulation with polymer material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
Definitions
- the invention relates to an optical semiconductor module, which optically couples an optical wave-guiding medium, such as an optical fiber, with a optical semiconductor device, such as a semiconductor laser and a photodiode.
- an optical semiconductor module which optically couples an optical wave-guiding medium, such as an optical fiber, with a optical semiconductor device, such as a semiconductor laser and a photodiode.
- An optical semiconductor module which optically couples an optical wave-guiding medium, such as an optical fiber, with an optical semiconductor device, such as a photodiode or a semiconductor laser, is one of the most important devices for constructing an optical communication system.
- an optical semiconductor device such as a photodiode or a semiconductor laser
- optical semiconductor module of this kind was reported on Proceeding of the 1997 IEICE general conference, C-3-62.
- This optical semiconductor module is composed of a semiconductor laser diode (LD) and a photodiode (PD), and enclosed by transparent resin, and circumference thereof is molded by insulating resin.
- LD semiconductor laser diode
- PD photodiode
- the optical semiconductor module in which the surface of insulating resin is covered with metallic shielding pieces or a metallic shielding layer, is proposed.
- the optical semiconductor module of this kind is disclosed in Japanese Patent Kokai 7-288332.
- the optical semiconductor module in which the source of insulating resin is covered with the metallic shielding pieces or the metallic shielding layer, it is necessary to form insulating resin into a box-like configuration, which is easily covered with the metallic shielding layer or etc..
- the process for forming insulating resin into the box-like configuration requires much labor, which makes it difficult to reduce the cost of the optical semiconductor module.
- an object of the invention to provide an optical semiconductor module, which is resisting against external noise and can be fabricated at a low price.
- an optical semiconductor module comprises:
- a method for fabricating an optical semiconductor module comprises the steps of:
- FIG.1 shows an outline of the preferred embodiment of the invention.
- a PD 3 of surface incidence type is combined with A Si substrate 2, which is mounted on a lead frame 1, via bumps 4.
- An optical fiber 5 is fitted in a V-groove 6, and resin 7 with high optical transmissivity is filled around an optical path of the optical fiber 5.
- All the structural elements are molded by resin 8 with high sealing capability, and an optical semiconductor module is obtained in this way.
- Refractive index of transparent resin 7 is approximately the same as that of the core of the optical fiber 5, and resin 8 encloses the structural elements of the optical semiconductor module to form an airtight sealing.
- Both transparent resin 7 and sealing resin 8 serve as insulators for preventing short circuits between the structural elements of the optical semiconductor module.
- conductive resin 10 covers sealing resin 8 and a ground plane 9, which is connected with the lead frame 1.
- a weak optical signal emitted from the optical fiber 5 is reflected by a mirror 11 and directed to the DP 3, and the optical signal incident on the PD 3 is converted into a weak electrical signal.
- the ground terminal of the PD 3 is connected with the lead frame 1, though it is not explicitly shown in FIG.1.
- conductive resin 10 serving as shielding material is liquid in case that it is applied to a half-finished optical semiconductor module, it uniformly covers an outer surface of the module, even when surfaces of transparent resin 7 and sealing resin 8 are uncertain.
- the PD 3 is provided with a light receiving surface with a diameter of 80 ⁇ m.
- the optical fiber 5 is a multimode fiber with a core diameter of 62.5 ⁇ m and an outer diameter of 125 ⁇ m.
- a refractive index of the transparent resin 7 is 1.47, which is nearly the same as that of the core of the optical fiber 5, and transmissivity of transparent resin 7 is more than 95%.
- Sealing resin 8 is formed on transparent resin 7.
- the bump 4 is formed of AuSn solder with a diameter of 90 ⁇ m and a height of 50 ⁇ m.
- Conductive resin 10 is silicone based resin containing Ag filler, and its specific resistance is 3 ⁇ 10 -4 ⁇ cm.
- Conductive resin 10 is applied o the surface of sealing resin 8 by means of a commonly used dispenser, heated at 150°C for three minutes and hardened. Although, the shape of sealing resin 8 is a semicircle, sealing resin 8 can be easily covered with liquid conductive resin 10.
- the weak optical signal emitted from the optical fiber is reflected by the mirror 11, and the optical signal incident on the PD 3 is converted into the weak electrical signal. Since the surface of the optical module is formed of conductive resin 10, electrical noise flows to the ground plane 9 via conductive resin 10 and does not affect the weak electrical signal received by the PD 3. In this way, a high receiving sensitivity of the optical semiconductor module can be achieved.
- transparent resin 7 and sealing resin 8 both serving as insulating layers, constitute a double layered structure
- the constitution of the insulator layers is never restricted to the double layered structure, and a single layered structure or more than three layered structure can be adopted, so long as a satisfactory optical coupling characteristic and reliable sealing property can be achieved.
- another insulating resin may be further formed on conductive resin 10 from a viewpoint of reliability and maintenance.
- conductive resin 10 is formed on sealing resin 8, but a similar effect can be obtained in case that conductive resin 10 is formed on transparent resin 7 also.
- the optical fiber is employed as an optical wave-guiding medium in this embodiment, a SiO 2 optical waveguide, a polyimide optical waveguide and a plastic optical waveguide can be adopted instead of the optical fiber.
- the optical fiber is never restricted to the multimode optical fiber, and a single mode optical fiber can be adopted as the optical wave-guiding medium.
- the PD of surface incidence type is used in the embodiment, but an avalanche photodiode (APD), a semiconductor laser diode (LD) and an optical amplifier can be adopted instead of the PD.
- APD avalanche photodiode
- LD semiconductor laser diode
- the PD is combined with the Si substrate via the bumps, but the PD can be combined with the Si substrate via a flat solder layer without using the bumps.
- the optical semiconductor module As mentioned in the above, according to the optical semiconductor module according to the invention, electrical noise form the outside of the optical semiconductor module flows to the ground plane via conductive resin, and cannot get into the PD. Accordingly, external noise is shielded by conductive resin and does not affect the characteristic of the PD, which generates a weak output signal. Moreover, there is no necessity for forming resin into a box-like configuration with a particular shape, the process related thereto can be cut down. Furthermore, the process of covering the optical semiconductor module with conductive resin requires no particular technology, and a commonly used potting process can be easily applied thereto. Accordingly, the optical semiconductor module can be supplied at a low price.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Optical Couplings Of Light Guides (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Lasers (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
Claims (7)
- An optical semiconductor module comprising:an optical wave-guiding medium allocated on a substrate for transmitting an optical signal,a photosensor for optical to electrical converting said optical signal emitted from an output end of said optical wave-guiding medium,means for optically coupling said output end of said optical wave-guiding medium with a light-receiving surface of said photosensor,insulating resin for filling a space surrounding an output part of said optical wave-guiding medium and said photosensor, andconductive resin, which is applied to an outer surface of said insulating resin and communicates with a ground plane connected with a ground terminal of said photosensor.
- An optical semiconductor module according to claim 1, wherein:said insulating resin is compose of transparent resin, which has a refractive index being nearly a same as that of core of said optical wave-guiding medium, and fills a space neighboring said output part of said optical wave-guiding medium and said photosensor, andsealing resin for enclosing said transparent resin.
- An optical semiconductor module according to claim 1 or 2, wherein:said optical wave-guiding medium is an optical fiber.
- An optical semiconductor module according to claim 1 or 2, wherein:said optical wave-guiding medium is an optical waveguide.
- An optical semiconductor module according to any one of claims 1 to 4, wherein:said mean for optically coupling is constituted of a light-reflecting means for directing a light emitted from said output end of said optical wave-guiding medium to said light-receiving surface of said photosensor.
- An optical semiconductor module according to any one of claims 1 to 5 and producible with the following method steps of:optically coupling an output end of said optical wave-guiding medium with a light-receiving surface of said photosensor,filling a space surrounding an output part of said optical wave-guiding medium and said photosensor with insulating resin, andapplying conductive resin to a surface of said insulating resin so that a surface of said insulating resin is covered with said conducting resin and said conductive resin communicates with a ground plane connected with a ground terminal of said photosensor.
- An optical semiconductor module according to claim 6, wherein:said step of filling said space comprises the steps of:filling an inner space neighboring said photosensor and an output part of said optical wave-guiding medium with a transparent resin, refractive index of which is nearly s same as that of a core of said optical wave-guiding medium, andcovering an outer surface of said inner space with sealing resin.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17793597 | 1997-07-03 | ||
| JP17793597A JP3191729B2 (en) | 1997-07-03 | 1997-07-03 | Optical semiconductor module and manufacturing method thereof |
| EP98112298A EP0889533B1 (en) | 1997-07-03 | 1998-07-02 | Optical semiconductor module and method for manufacturing same |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP98112298A Division EP0889533B1 (en) | 1997-07-03 | 1998-07-02 | Optical semiconductor module and method for manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1180801A2 true EP1180801A2 (en) | 2002-02-20 |
| EP1180801A3 EP1180801A3 (en) | 2003-03-12 |
Family
ID=16039647
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP98112298A Expired - Lifetime EP0889533B1 (en) | 1997-07-03 | 1998-07-02 | Optical semiconductor module and method for manufacturing same |
| EP01124274A Withdrawn EP1180801A3 (en) | 1997-07-03 | 1998-07-02 | Optical semiconductor module |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP98112298A Expired - Lifetime EP0889533B1 (en) | 1997-07-03 | 1998-07-02 | Optical semiconductor module and method for manufacturing same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6019523A (en) |
| EP (2) | EP0889533B1 (en) |
| JP (1) | JP3191729B2 (en) |
| KR (1) | KR100298606B1 (en) |
| DE (1) | DE69805702T2 (en) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19748989A1 (en) * | 1997-11-06 | 1999-07-15 | Daimler Chrysler Ag | Optical transmit / receive module |
| JP3792040B2 (en) * | 1998-03-06 | 2006-06-28 | 松下電器産業株式会社 | Bidirectional optical semiconductor device |
| JP3734017B2 (en) * | 1998-08-05 | 2006-01-11 | セイコーエプソン株式会社 | Optical module |
| JP2000098188A (en) * | 1998-09-18 | 2000-04-07 | Fujitsu Ltd | Optical module |
| JP2000110176A (en) * | 1998-10-02 | 2000-04-18 | Fujitsu Ltd | Optical module and method of manufacturing the same |
| JP3033576B1 (en) | 1999-02-18 | 2000-04-17 | 日本電気株式会社 | Semiconductor device and method of manufacturing semiconductor device |
| DE19918859C2 (en) * | 1999-04-26 | 2002-02-07 | Tyco Electronics Logistics Ag | Electro-optical converter component and method for its production |
| DE19918860C2 (en) * | 1999-04-26 | 2002-03-07 | Tyco Electronics Logistics Ag | Electro-optical converter component and method for its production |
| JP3758938B2 (en) * | 1999-06-16 | 2006-03-22 | セイコーエプソン株式会社 | Optical module, method for manufacturing the same, and optical transmission device |
| JP2001059923A (en) | 1999-06-16 | 2001-03-06 | Seiko Epson Corp | Optical module and manufacturing method thereof, semiconductor device, and optical transmission device |
| JP2001004853A (en) * | 1999-06-23 | 2001-01-12 | Nec Corp | Optical module and its manufacture |
| JP2001264593A (en) * | 2000-03-22 | 2001-09-26 | Sumitomo Electric Ind Ltd | Optical device |
| JP3721935B2 (en) * | 2000-04-19 | 2005-11-30 | 住友電気工業株式会社 | Optical device |
| DE10023353A1 (en) * | 2000-05-12 | 2001-11-29 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing it |
| DE10024473B4 (en) | 2000-05-18 | 2007-04-19 | Vishay Semiconductor Gmbh | Optical receiver |
| US20020122637A1 (en) * | 2000-12-26 | 2002-09-05 | Anderson Gene R. | Optical transmitter, receiver or transceiver module |
| US6709170B2 (en) * | 2001-01-08 | 2004-03-23 | Optical Communications Products, Inc. | Plastic encapsulation of optoelectronic devices for optical coupling |
| FR2822246B1 (en) * | 2001-03-15 | 2003-05-16 | Opsitech Optical Sys On A Chip | METHOD FOR MANUFACTURING AN OPTICAL PACKAGE AND OPTO-ELECTRONIC DEVICE |
| JP3893252B2 (en) * | 2001-03-30 | 2007-03-14 | 株式会社日立製作所 | Optical transmitter / receiver module and manufacturing method thereof |
| CN1302306C (en) * | 2001-09-14 | 2007-02-28 | 因芬尼昂技术股份公司 | Transmitting and/or receiving devices for optical signal transmission |
| JP2003124500A (en) * | 2001-10-15 | 2003-04-25 | Sharp Corp | Optical coupling element |
| JP2003258137A (en) * | 2002-02-28 | 2003-09-12 | Mitsubishi Electric Corp | Semiconductor device |
| EP1491926A4 (en) * | 2002-03-29 | 2006-05-17 | Ngk Insulators Ltd | OPTICAL DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| US6835582B1 (en) | 2003-01-15 | 2004-12-28 | The United States Of America As Represented By The Secretary Of The Navy | Microchip-level optical interconnect |
| JP4153914B2 (en) * | 2003-01-27 | 2008-09-24 | 日本碍子株式会社 | Optical device |
| JP4381698B2 (en) * | 2003-03-10 | 2009-12-09 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
| US6856717B2 (en) * | 2003-03-24 | 2005-02-15 | Hymite A/S | Package with a light emitting device |
| JP3920264B2 (en) * | 2003-12-26 | 2007-05-30 | 株式会社東芝 | Manufacturing method of optical semiconductor module |
| US7263260B2 (en) * | 2005-03-14 | 2007-08-28 | Matsushita Electric Industrial Co., Ltd. | Low cost, high precision multi-point optical component attachment |
| WO2008139763A1 (en) * | 2007-05-14 | 2008-11-20 | Fujikura Ltd. | Optical communications module, process for manufacturing the same, and optical transmitter and receiver apparatus |
| JP4932606B2 (en) * | 2007-06-06 | 2012-05-16 | 株式会社フジクラ | Optical transceiver |
| US7791016B2 (en) * | 2007-10-29 | 2010-09-07 | Hamamatsu Photonics K.K. | Photodetector |
| JP4892457B2 (en) * | 2007-11-06 | 2012-03-07 | 日東電工株式会社 | Manufacturing method of optical waveguide device and optical waveguide device obtained thereby |
| JP2008288610A (en) * | 2008-07-17 | 2008-11-27 | Taiyo Yuden Co Ltd | Circuit module manufacturing method |
| JP5265025B2 (en) * | 2010-01-06 | 2013-08-14 | 株式会社フジクラ | Optical coupling structure and optical transceiver module |
| US9054024B2 (en) * | 2012-02-13 | 2015-06-09 | Futurewei Technologies, Inc. | Apparatus and method for optical communications |
| JP5277326B2 (en) * | 2012-02-13 | 2013-08-28 | 株式会社フジクラ | Manufacturing method of optical transceiver |
| JP5621862B2 (en) * | 2013-02-27 | 2014-11-12 | ヒロセ電機株式会社 | Photoelectric composite connector |
| JP2015035439A (en) * | 2013-08-07 | 2015-02-19 | ルネサスエレクトロニクス株式会社 | Optical coupling device and optical coupling device manufacturing method |
| US12429658B2 (en) | 2017-02-24 | 2025-09-30 | Lipac Co., Ltd. | Optical element module, slim connector plug, active optical cable assembly using same, and manufacturing method thereof |
| KR101924939B1 (en) * | 2017-02-24 | 2018-12-04 | 주식회사 지파랑 | Slim Type Connector Plug, Active Optical Cable Assembly Using the Same and Method of Manufacturing the Same |
| WO2019058634A1 (en) * | 2017-09-25 | 2019-03-28 | オリンパス株式会社 | Optical module |
| JPWO2024185317A1 (en) * | 2023-03-07 | 2024-09-12 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5980979A (en) * | 1982-10-29 | 1984-05-10 | Matsushita Electric Ind Co Ltd | Photoelectric converter |
| US5226052A (en) * | 1990-05-08 | 1993-07-06 | Rohm, Ltd. | Laser diode system for cutting off the environment from the laser diode |
| DE4323828C2 (en) * | 1993-07-16 | 1995-12-14 | Ant Nachrichtentech | Arrangement for coupling at least one optical fiber end to an optoelectronic transmitter or receiver module |
| JPH07288332A (en) * | 1994-02-25 | 1995-10-31 | Fujitsu Ltd | Optical element assembly and manufacturing method thereof |
| JPH0818163A (en) * | 1994-06-24 | 1996-01-19 | Nippon Telegr & Teleph Corp <Ntt> | Optical device |
| DE69514358T2 (en) * | 1994-06-29 | 2000-08-24 | British Telecommunications Public Ltd. Co., London | OPTICAL COMPONENT ARRANGEMENT |
| JPH08220368A (en) * | 1995-02-13 | 1996-08-30 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor device module |
| JPH0984162A (en) * | 1995-09-14 | 1997-03-28 | Sharp Corp | Remote control light receiving unit |
| DE19714170C1 (en) * | 1997-03-21 | 1998-07-30 | Siemens Ag | Electro-optical coupler with circuitry and converters, separated from optical fibres by filled coupling gap |
-
1997
- 1997-07-03 JP JP17793597A patent/JP3191729B2/en not_active Expired - Fee Related
-
1998
- 1998-06-30 US US09/107,745 patent/US6019523A/en not_active Expired - Fee Related
- 1998-07-02 DE DE69805702T patent/DE69805702T2/en not_active Expired - Fee Related
- 1998-07-02 EP EP98112298A patent/EP0889533B1/en not_active Expired - Lifetime
- 1998-07-02 EP EP01124274A patent/EP1180801A3/en not_active Withdrawn
- 1998-07-02 KR KR1019980026562A patent/KR100298606B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0889533A3 (en) | 2000-01-26 |
| EP1180801A3 (en) | 2003-03-12 |
| DE69805702D1 (en) | 2002-07-11 |
| JPH1126646A (en) | 1999-01-29 |
| DE69805702T2 (en) | 2002-10-17 |
| KR19990013531A (en) | 1999-02-25 |
| KR100298606B1 (en) | 2001-09-06 |
| US6019523A (en) | 2000-02-01 |
| JP3191729B2 (en) | 2001-07-23 |
| EP0889533B1 (en) | 2002-06-05 |
| EP0889533A2 (en) | 1999-01-07 |
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| JPH08220368A (en) | Optical semiconductor device module |
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