EP1114210A4 - Low-temperature process for forming an epitaxial layer on a semiconductor substrate - Google Patents
Low-temperature process for forming an epitaxial layer on a semiconductor substrateInfo
- Publication number
- EP1114210A4 EP1114210A4 EP99945264A EP99945264A EP1114210A4 EP 1114210 A4 EP1114210 A4 EP 1114210A4 EP 99945264 A EP99945264 A EP 99945264A EP 99945264 A EP99945264 A EP 99945264A EP 1114210 A4 EP1114210 A4 EP 1114210A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- forming
- low
- semiconductor substrate
- epitaxial layer
- temperature process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9805798P | 1998-08-26 | 1998-08-26 | |
US98057P | 1998-08-26 | ||
PCT/US1999/019684 WO2000012785A1 (en) | 1998-08-26 | 1999-08-26 | Low-temperature process for forming an epitaxial layer on a semiconductor substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1114210A1 EP1114210A1 (en) | 2001-07-11 |
EP1114210A4 true EP1114210A4 (en) | 2003-04-16 |
Family
ID=22266670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP99945264A Withdrawn EP1114210A4 (en) | 1998-08-26 | 1999-08-26 | Low-temperature process for forming an epitaxial layer on a semiconductor substrate |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1114210A4 (en) |
JP (1) | JP2002523908A (en) |
WO (1) | WO2000012785A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004537855A (en) * | 2001-07-27 | 2004-12-16 | イーハーペー ゲーエムベーハー−イノヴェイションズ フォー ハイ パフォーマンス マイクロエレクトロニクス/インスティチュート フュア イノヴァティーヴェ ミクロエレクトローニク | Method and apparatus for producing thin epitaxial semiconductor layer |
DE10335460B4 (en) * | 2003-08-02 | 2008-02-28 | Infineon Technologies Ag | Method for operating a CVD system |
CN100418247C (en) * | 2003-11-07 | 2008-09-10 | 崇越科技股份有限公司 | Multi-chamber separated crystal organic metallized gas phase crystallizing device and method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4738618A (en) * | 1987-05-14 | 1988-04-19 | Semitherm | Vertical thermal processor |
JPH10209050A (en) * | 1997-01-24 | 1998-08-07 | Nec Corp | Manufacturing method for semiconductor thin film |
WO1998035531A1 (en) * | 1997-01-27 | 1998-08-13 | Semitool, Inc. | Model based temperature controller for semiconductor thermal processors |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5273621A (en) * | 1989-11-27 | 1993-12-28 | At&T Bell Laboratories | Substantially facet-free selective epitaxial growth process |
US5168089A (en) * | 1989-11-27 | 1992-12-01 | At&T Bell Laboratories | Substantially facet-free selective epitaxial growth process |
US5089441A (en) * | 1990-04-16 | 1992-02-18 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafers |
JPH05217921A (en) * | 1991-09-13 | 1993-08-27 | Motorola Inc | Temperature-controlled treatment for execution of epitaxial growth of material film |
US5498578A (en) * | 1994-05-02 | 1996-03-12 | Motorola, Inc. | Method for selectively forming semiconductor regions |
WO1996015550A1 (en) * | 1994-11-10 | 1996-05-23 | Lawrence Semiconductor Research Laboratory, Inc. | Silicon-germanium-carbon compositions and processes thereof |
-
1999
- 1999-08-26 WO PCT/US1999/019684 patent/WO2000012785A1/en not_active Application Discontinuation
- 1999-08-26 EP EP99945264A patent/EP1114210A4/en not_active Withdrawn
- 1999-08-26 JP JP2000567765A patent/JP2002523908A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4738618A (en) * | 1987-05-14 | 1988-04-19 | Semitherm | Vertical thermal processor |
JPH10209050A (en) * | 1997-01-24 | 1998-08-07 | Nec Corp | Manufacturing method for semiconductor thin film |
US6074478A (en) * | 1997-01-24 | 2000-06-13 | Nec Corporation | Method of facet free selective silicon epitaxy |
WO1998035531A1 (en) * | 1997-01-27 | 1998-08-13 | Semitool, Inc. | Model based temperature controller for semiconductor thermal processors |
Non-Patent Citations (3)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 13 30 November 1998 (1998-11-30) * |
REGOLINI J L ET AL: "EPITAXIAL SILICON CHEMICAL VAPOR DEPOSITION BELOW ATMOSPHERIC PRESSURE", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. B04, no. 1/4, 1 October 1989 (1989-10-01), pages 407 - 415, XP000095491, ISSN: 0921-5107 * |
See also references of WO0012785A1 * |
Also Published As
Publication number | Publication date |
---|---|
JP2002523908A (en) | 2002-07-30 |
WO2000012785A1 (en) | 2000-03-09 |
EP1114210A1 (en) | 2001-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU5068599A (en) | Method for manufacturing a semiconductor device having a metal layer floating over a substrate | |
SG77227A1 (en) | Semiconductor device its manufacturing method and substrate for manufacturing a semiconductor device | |
GB0017261D0 (en) | Method for forming semiconductor films at desired positions on a substrate | |
AU2002366856A8 (en) | Method for depositing iii-v semiconductor layers on a non-iii-v substrate | |
AU5844698A (en) | Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate | |
AU5969698A (en) | Process for producing semiconductor substrate | |
AU4981799A (en) | Method for forming a copper film on a substrate | |
AU4183300A (en) | Method and apparatus for forming an electrical contact with a semiconductor substrate | |
FR2776128B1 (en) | INDUCTANCE DEVICE FORMED ON A SEMICONDUCTOR SUBSTRATE | |
KR20010012977A (en) | Semiconductor device and method for manufacturing the same, circuit substrate, and electronic device | |
AU2571599A (en) | Wafer carrier and semiconductor apparatus for processing a semiconductor substrate | |
AU6133799A (en) | A method for cleaning organic dielectric film containing semiconductor wafers | |
FR2767603B1 (en) | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE ON A SEMICONDUCTOR SUBSTRATE | |
AU2002358678A1 (en) | Method for depositing iii-v semiconductor layers on a non iii-v substrate | |
HK1042627A1 (en) | Process for depositing conducting layer on substrate | |
GB2336945B (en) | Method for forming interconnection structure for a semiconductor device | |
EP1034082A4 (en) | A method for minimizing the critical dimension growth of a feature on a semiconductor wafer | |
AU6491600A (en) | Apparatus for growing epitaxial layers on wafers | |
AU1280600A (en) | Method for epitaxial growth on a substrate | |
EP1069214A4 (en) | Epitaxial silicon wafer and its production method, and substrate for epitaxial silicon wafer | |
SG82617A1 (en) | Production method for silicon epitaxial wafer | |
SG87844A1 (en) | Semiconductor wafer carrier | |
SG67503A1 (en) | Process for etching semiconductor wafers | |
EP1035574A4 (en) | Carrier box for semiconductor substrate | |
GB2337634B (en) | Method for fabricating a semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20010323 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: 7C 30B 25/02 B Ipc: 7C 30B 25/10 B Ipc: 7C 30B 25/16 B Ipc: 7C 30B 25/14 B Ipc: 7C 30B 25/08 A |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20030304 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Effective date: 20030430 |