EP1040311B1 - Integrated circuit arrangement for heating ignition material and use of this integrated circuit arrangement - Google Patents
Integrated circuit arrangement for heating ignition material and use of this integrated circuit arrangement Download PDFInfo
- Publication number
- EP1040311B1 EP1040311B1 EP98965613A EP98965613A EP1040311B1 EP 1040311 B1 EP1040311 B1 EP 1040311B1 EP 98965613 A EP98965613 A EP 98965613A EP 98965613 A EP98965613 A EP 98965613A EP 1040311 B1 EP1040311 B1 EP 1040311B1
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- EP
- European Patent Office
- Prior art keywords
- circuit arrangement
- ignition
- integrated circuit
- sio
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F42—AMMUNITION; BLASTING
- F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
- F42B3/00—Blasting cartridges, i.e. case and explosive
- F42B3/10—Initiators therefor
- F42B3/12—Bridge initiators
- F42B3/13—Bridge initiators with semiconductive bridge
Definitions
- the invention relates to an integrated circuit arrangement for heating ignition material and the use of a such integrated circuit arrangement.
- One proposed in an older patent application (DE 197 02 118) integrated circuit arrangement for heating Ignition material contains a silicon substrate with a highly doped Heating zone as an ignition resistor.
- the area of the heating zone has a smaller cross section than the rest of the area of the silicon substrate.
- the object of the invention is an integrated circuit arrangement to heat up ignition material to create the further the integration of a control circuit for the ignition resistor allows and still a good heat transfer from Ignition resistance to the ignition material allowed.
- FIG. 1 shows an electrical equivalent circuit diagram of an igniter, which in particular for triggering an occupant protection device is used in a motor vehicle.
- the occupant protection system is preferably located centrally in the vehicle Control unit arranged over a bus line with igniters of occupant protection devices such as airbags, belt tensioners, etc. connected is.
- the control unit recognizes acceleration or Depending on the body deformation, an impact will be over corresponding ignition commands selected igniter activated.
- everyone Igniter is arranged in a gas generator housing, which, for example, in a folded airbag empties.
- a control circuit 1 of the igniter evaluates the bus connection 2 received messages and acted upon an ignition resistor 3 electrically connected to it with a sufficiently large current pulse.
- Control circuit 1 ignition resistor 3 and ignition capacitor 4 are housed in a lighter housing. Also in this case is the ignition resistance 3 around ignition material, e.g. B. ignition powder, arranged. At a Heating the ignition resistor 3 explodes as a result of the heat transfer the ignition powder. Released by the explosion Energy causes tablets of the gas generator to release gas, that flows out into the folded airbag and thus enters Inflation of the airbag causes.
- ignition material e.g. B. ignition powder
- FIG. 2 shows an exemplary embodiment of the integrated circuit arrangement according to the invention, which is provided for heating ignition material. It contains the ignition resistor and the control circuit according to FIG. 1 on a common semiconductor substrate.
- a semiconductor layer Si preferably a silicon substrate, contains components of the control circuit in the form of doped regions n / p.
- a further semiconductor layer Ps preferably a polysilicon layer is deposited on the Si semiconductor layer.
- any other electrically conductive layer with an ohmic resistance can be used.
- the polysilicon layer Ps serves to electrically connect the components arranged in the semiconductor layer Si.
- Electrically conductive layers Alu1, Alu2, and Alu3 are each attached to the polysilicon layer Ps by insulating layers SiO 2/2 , SiO 2/3 , SiO 2/4 . These electrically conductive layers Alu1, Alu2, Alu3 serve to make electrical contact with the control circuit. This requires vertical through-plating (not shown) up to the polysilicon layer and the semiconductor layer. These electrically conductive layers Alu1, Alu2, Alu3 are preferably made of aluminum.
- the integrated circuit arrangement according to Figure 2 not only the control circuit for the ignition resistor of the lighter, but also the ignition resistance itself. It is through a region Zb of the polysilicon layer Ps realized.
- the ignition area Zb in the polysilicon layer Ps is designed such that it is preferably an ohmic Resistance value of 1-20 Ohm.
- Zb is in the ignition range the cross section of the polysilicon layer is tapered.
- the point so tapered ensures that electrical energy in the form of a capacitor the tapered point of flowing current is tapered exactly at this, low-resistance point is converted into thermal energy and thereby arranged on / at this tapered area Ignition material / ignition powder is brought to explode.
- the Ignition area can be tapered in width or height be trained. In any case, the cross-sectional area the polysilicon layer in the tapered area - in other words in the Area where the heating effect should be achieved - less than in the area where the polysilicon layer predominantly acts as a wiring layer.
- the electrically conductive layers Alu1, Alu2 and Alu3 and the insulating layers SiO 2/3 and SiO 2/4 have cutouts As in the ignition area Zb. These recesses As are required to ensure good heat transfer from the ignition resistance implemented in the polysilicon layer Ps to the ignition material Zp.
- the entire integrated circuit arrangement is embedded in such ignition material Zp.
- the ignition material Zp is preferably pressed onto the integrated circuit arrangement, in particular in the ignition area Zb. If the integrated circuit arrangement has only one electrically conductive layer Alul, then of course only this electrically conductive layer contains the cutout As.
- the recesses As are produced by etching as part of a standard semiconductor process.
- the insulating layer SiO 2/2 arranged directly on the polysilicon layer Ps is used as an etching stop for this etching process.
- the areas As recessed by etching can be created with small tolerances and can thus be adapted exactly to the ignition area Zb.
- the invention thus has the great advantage that in a single integrated circuit arrangement ignition resistance and Control circuit for the ignition resistor can be integrated and at the same time good heat transfer from the squib resistor to the ignition powder is guaranteed. At the same time Creation of this with little effort and tolerance Heat transfer through the formation of the recesses in a row of standard etching processes.
- the invention can also be used exclusively or in addition to the recess in the electrical conductive layer Alu1 a recess As in the semiconductor layer Si in the ignition area Zb to be etched by this A good thermal connection of the ignition resistor to ensure the ignition material Zp.
- the ignition material Zp is preferably always on the side where the Recess As is etched free.
- circuit arrangement in flip-chip technology on a Carriers are arranged, i.e. becomes the circuit arrangement directly with contact surfaces of one of the electrically conductive Layers placed on mating contact surfaces of a carrier, see above is advantageously only the semiconductor layer Si with the Provide recess As. It is from the side of the semiconductor layer Si her ignition material Zp pressed against the circuit arrangement.
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Air Bags (AREA)
Description
Integrierte Schaltungsanordnung zum Aufheizen von Zündmaterial sowie Verwendung einer solchen integrierten Schaltungsanordnung.Integrated circuit arrangement for heating ignition material and use of such an integrated circuit arrangement.
Die Erfindung betrifft eine integrierte Schaltungsanordnung zum Aufheizen von Zündmaterial sowie eine Verwendung einer solchen integrierten Schaltungsanordnung.The invention relates to an integrated circuit arrangement for heating ignition material and the use of a such integrated circuit arrangement.
Eine in einer älteren Patentanmeldung (DE 197 02 118) vorgeschlagene integrierte Schaltungsanordnung zum Aufheizen von Zündmaterial enthält ein Siliziumsubstrat mit einer hochdotierten Heizzone als Zündwiderstand. Der Bereich der Heizzone weist einen geringeren Querschnitt auf als der übrige Bereich des Siliziumsubstrats.One proposed in an older patent application (DE 197 02 118) integrated circuit arrangement for heating Ignition material contains a silicon substrate with a highly doped Heating zone as an ignition resistor. The area of the heating zone has a smaller cross section than the rest of the area of the silicon substrate.
Weiterhin ist aus der US 4 831 933 eine integrierte Schaltungsanordnung zum Aufheizen von Zündmaterial bekannt, die ein Heizelement in Form eines, auf einem Siliziumsubstrat aufgebrachten, Polysiliziumstreifens aufweist. Eine Aussparung des Siliziumsubstrats im Bereich des Heizelements soll einen Wärmeabfluß von diesem verhindern.Furthermore, an integrated circuit arrangement is known from US Pat. No. 4,831,933 known for heating ignition material, the a heating element in the form of a, on a silicon substrate applied polysilicon strip. A recess of the silicon substrate in the area of the heating element prevent heat from flowing away from it.
Aufgabe der Erfindung ist es, eine integrierte Schaltungsanordnung zum Aufheizen von Zündmaterial zu schaffen, die weiter die Integration einer Ansteuerschaltung für den Zündwiderstand zuläßt und dennoch einen guten Wärmeübergang vom Zündwiderstand zum Zündmaterial erlaubt.The object of the invention is an integrated circuit arrangement to heat up ignition material to create the further the integration of a control circuit for the ignition resistor allows and still a good heat transfer from Ignition resistance to the ignition material allowed.
Die Erfindung wird gelöst durch die Merkmale des Patentanspruchs 1. Eine vorteilhafte Verwendung der erfindungsgemäßen integrierten Schaltungsanordnung wird in Patentanspruch 5 angegeben. Vorteilhafte Weiterbildungen der Erfindung sind durch die Unteransprüche gekennzeichnet. The invention is solved by the features of the patent claim 1. An advantageous use of the invention Integrated circuit arrangement is specified in claim 5. Advantageous developments of the invention are characterized by the subclaims.
Die Erfindung und ihre Weiterbildungen werden anhand der Ausführungsbeispiele in den Zeichnungen näher erläutert. Es zeigen:
- Figur 1
- ein elektrisches Ersatzschaltbild eines Anzünders zum Auslösen eines Insassenschutzmittels eines Kraftfahrzeugs, und
Figur 2- ein Schichtenmodell einer erfindungsgemäßen integrierten Schaltungsanordnung.
- Figure 1
- an electrical equivalent circuit diagram of an igniter for triggering an occupant protection means of a motor vehicle, and
- Figure 2
- a layer model of an integrated circuit arrangement according to the invention.
Figur 1 zeigt ein elektrisches Ersatzschaltbild eines Anzünders,
der insbesondere zum Auslösen eines Insassenschutzmittels
in einem Kraftfahrzeug verwendet wird. Bei einem solchen
Insassenschutzsystem ist vorzugsweise zentral im Fahrzeug ein
Steuergerät angeordnet, das über eine Busleitung mit Anzündern
von Insassenschutzmitteln wie Airbag, Gurtstraffer, etc.
verbunden ist. Erkennt das Steuergerät beschleunigungs- oder
karosserieverformungsabhängig einen Aufprall, so werden über
entsprechende Zündbefehle ausgewählte Anzünder aktiviert. Jeder
Anzünder ist dabei in einem Gasgeneratorgehäuse angeordnet,
welches beispielsweise in einen zusammengefalteten Airbag
mündet. Eine Steuerschaltung 1 des Anzünders wertet über
die Busanbindung 2 empfangene Nachrichten aus und beaufschlagt
einen mit ihr elektrisch verbundenen Zündwiderstand 3
mit einem ausreichend großem Stromimpuls. Die Energie wird
dabei von einem Zündkondensator 4 geliefert und über eine
steuerbare Leistungstufe 11 an den Zündwiderstand 3 weitergeleitet.
Steuerschaltung 1, Zündwiderstand 3 und Zündkondensator
4 sind dabei in einem Gehäuse des Anzünders untergebracht.
Ebenfalls in diesem Gehäuse ist um den Zündwiderstand
3 herum Zündmaterial, z. B. Zündpulver, angeordnet. Bei einem
Erhitzen des Zündwiderstands 3 explodiert in Folge des Wärmeübergangs
das Zündpulver. Durch die Explosion freiwerdende
Energie veranlaßt Tabletten des Gasgenerators, Gas freizusetzen,
das in den gefalteten Airbag ausströmt und damit ein
Aufblasen des Airbags verursacht.FIG. 1 shows an electrical equivalent circuit diagram of an igniter,
which in particular for triggering an occupant protection device
is used in a motor vehicle. With such a
The occupant protection system is preferably located centrally in the vehicle
Control unit arranged over a bus line with igniters
of occupant protection devices such as airbags, belt tensioners, etc.
connected is. The control unit recognizes acceleration or
Depending on the body deformation, an impact will be over
corresponding ignition commands selected igniter activated. Everyone
Igniter is arranged in a gas generator housing,
which, for example, in a folded airbag
empties. A control circuit 1 of the igniter evaluates
the
Figur 2 zeigt ein Ausführungsbeispiel der erfindungsgemäßen integrierten Schaltungsanordnung, die zum Aufheizen von Zündmaterial vorgesehen ist. Sie enthält den Zündwiderstand und die Steuerschaltung nach Figur 1 auf einem gemeinsamen Halbleitersubstrat. Eine Halbleiterschicht Si, vorzugsweise ein Siliziumsubstrat, enthält Bauelemente der Steuerschaltung in Form von dotierten Bereichen n/p. Getrennt durch eine Isolierschicht SiO2/1, die vorzugsweise als Siliziumoxidschicht ausgebildet ist, ist eine weitere Halbleiterschicht Ps, vorzugsweise eine Polysiliziumschicht, auf der Halbleiterschicht Si aufgebracht. Anstelle der Polysiliziumschicht Ps kann jede andere elektrisch leitende Schicht mit einem Ohmschen Widerstand verwendet werden. Die Polysiliziumschicht Ps dient zum elektrischen Verbinden der in der Halbleiterschicht Si angeordneten Bauelemente. Dazu sind nicht eingezeichnete Durchkontakierungen von der Polysiliziumschicht Ps durch die Isolierschicht SiO2/1 zur Halbleiterschicht Si vorgesehen. Darüber hinaus können Ohmsche Widerstände oder beispielsweise Kondensatorelektroden durch die Polysiliziumschicht Ps realisiert werden.FIG. 2 shows an exemplary embodiment of the integrated circuit arrangement according to the invention, which is provided for heating ignition material. It contains the ignition resistor and the control circuit according to FIG. 1 on a common semiconductor substrate. A semiconductor layer Si, preferably a silicon substrate, contains components of the control circuit in the form of doped regions n / p. Separated by an insulating SiO 2/1, which is preferably formed as a silicon oxide layer, a further semiconductor layer Ps, preferably a polysilicon layer is deposited on the Si semiconductor layer. Instead of the polysilicon layer Ps, any other electrically conductive layer with an ohmic resistance can be used. The polysilicon layer Ps serves to electrically connect the components arranged in the semiconductor layer Si. For this purpose, not illustrated Durchkontakierungen of the polysilicon layer through the insulating layer Ps SiO 2/1 are provided to the semiconductor layer Si. In addition, ohmic resistors or, for example, capacitor electrodes can be realized by the polysilicon layer Ps.
Jeweils durch Isolierschichten SiO2/2, SiO2/3, SiO2/4 voneinander getrennt sind elektrisch leitende Schichten Alu1, Alu2, und Alu3 auf der Polysiliziumschicht Ps angebracht. Diese elektrisch leitenden Schichten Alu1, Alu2, Alu3 dienen zum elektrischen Kontaktieren der Steuerschaltung. Dazu sind nicht eingezeichnete vertikale Durchkontaktierungen bis zur Polysiliziumschicht und zur Halbleiterschicht erforderlich. Diese elektrisch leitenden Schichten Alu1, Alu2, Alu3 sind vorzugsweise aus Aluminium hergestellt.Electrically conductive layers Alu1, Alu2, and Alu3 are each attached to the polysilicon layer Ps by insulating layers SiO 2/2 , SiO 2/3 , SiO 2/4 . These electrically conductive layers Alu1, Alu2, Alu3 serve to make electrical contact with the control circuit. This requires vertical through-plating (not shown) up to the polysilicon layer and the semiconductor layer. These electrically conductive layers Alu1, Alu2, Alu3 are preferably made of aluminum.
Erfindungsgemäß enthält also die integrierte Schaltungsanordnung nach Figur 2 nicht nur die Steuerschaltung für den Zündwiderstand des Anzünders, sondern auch den Zündwiderstand selbst. Er ist durch einen Bereich Zb der Polysiliziumschicht Ps realisiert. Der Zündbereich Zb in der Polysiliziumschicht Ps ist derart ausgelegt, daß er vorzugsweise einem Ohmschen Widerstandswert von 1-20 Ohm aufweist. Im Zündbereich Zb ist die Polysiliziumschicht in ihrem Querschnitt verjüngt. Durch eine derartige Formgebung der Polysiliziumschicht Ps entsteht im Zündbereich Zb ein Zündelement in Form einer Heizwiderstandsbrücke. Die derart verjüngte Stelle stellt sicher, daß elektrische Energie in Form eines aus einem Kondensator über die verjüngten Stelle fließenden Stroms genau an dieser verjungten, niederohmigen Stelle in Wärmeenergie umgesetzt wird und dadurch ein an/bei diesem verjüngten Bereich angeordnetes Zündmaterial/Zündpulver zum Explodieren gebracht wird. Der Zündbereich kann dazu in seiner Breite oder Höhe verjüngt ausgebildet sein. In jedem Fall ist die Querschnittsfläche der Polysiliziumschicht im verjüngten Bereich - also in dem Bereich, in dem die Heizwirkung erzielt werden soll - geringer als in dem Bereich, in dem die Polysiliziumschicht vornehmlich als Verdrahtungsschicht wirkt.According to the invention, therefore, contains the integrated circuit arrangement according to Figure 2 not only the control circuit for the ignition resistor of the lighter, but also the ignition resistance itself. It is through a region Zb of the polysilicon layer Ps realized. The ignition area Zb in the polysilicon layer Ps is designed such that it is preferably an ohmic Resistance value of 1-20 Ohm. Zb is in the ignition range the cross section of the polysilicon layer is tapered. By such a shaping of the polysilicon layer Ps arises an ignition element in the form of a heating resistor bridge in the ignition area Zb. The point so tapered ensures that electrical energy in the form of a capacitor the tapered point of flowing current is tapered exactly at this, low-resistance point is converted into thermal energy and thereby arranged on / at this tapered area Ignition material / ignition powder is brought to explode. The Ignition area can be tapered in width or height be trained. In any case, the cross-sectional area the polysilicon layer in the tapered area - in other words in the Area where the heating effect should be achieved - less than in the area where the polysilicon layer predominantly acts as a wiring layer.
Erfindungsgemäß weisen die elektrisch leitenden Schichten Alu1, Alu2 und Alu3 und die Isolierschichten SiO2/3 und SiO2/4 im Zündbereich Zb Aussparungen As auf. Diese Aussparungen As sind erforderlich, um einen guten Wärmeübergang vom in der Polysiliziumschicht Ps realisierten Zündwiderstand zum Zündmaterial Zp zu gewährleisten. Im Ausführungsbeispiel nach Figur 2 ist dabei die gesamte integrierte Schaltungsanordnung in solches Zündmaterial Zp eingebettet. Dabei ist das Zündmaterial Zp vorzugsweise an die integrierte Schaltungsanordnung insbesondere im Zündbereich Zb angepreßt. Weist die integrierte Schaltungsanordnung lediglich eine elektrisch leitende Schicht Alul auf, so enthält natürlich nur diese elektrisch leitende Schicht die Aussparung As auf.According to the invention, the electrically conductive layers Alu1, Alu2 and Alu3 and the insulating layers SiO 2/3 and SiO 2/4 have cutouts As in the ignition area Zb. These recesses As are required to ensure good heat transfer from the ignition resistance implemented in the polysilicon layer Ps to the ignition material Zp. In the exemplary embodiment according to FIG. 2, the entire integrated circuit arrangement is embedded in such ignition material Zp. The ignition material Zp is preferably pressed onto the integrated circuit arrangement, in particular in the ignition area Zb. If the integrated circuit arrangement has only one electrically conductive layer Alul, then of course only this electrically conductive layer contains the cutout As.
Das Herstellen der Aussparungen As erfolgt durch Ätzung im Rahmen eines Standard-Halbleiter-Prozesses. Vorzugsweise wird dabei die unmittelbar auf der Polysiliziumschicht Ps angeordnete Isolierschicht SiO2/2 als Ätzstop für diesen Ätzprozeß verwendet. Die durch Ätzen ausgesparten Bereiche As können mit geringen Toleranzen erstellt und damit genau an den Zündbereich Zb angepaßt werden.The recesses As are produced by etching as part of a standard semiconductor process. Preferably, the insulating layer SiO 2/2 arranged directly on the polysilicon layer Ps is used as an etching stop for this etching process. The areas As recessed by etching can be created with small tolerances and can thus be adapted exactly to the ignition area Zb.
Die Erfindung hat damit den großen Vorteil, daß in einer einzigen integrierten Schaltungsanordnung Zündwiderstand und Steuerschaltung für den Zündwiderstand integriert werden können und gleichzeitig ein guter Wärmeübergang vom Zündpillenwiderstand zum Zündpulver gewährleistet wird. Bei gleichzeitiger aufwandsarmer und toleranzgenauer Erstellung dieses Wärmeübergangs durch das Ausbilden der Aussparungen in Folge von Standard-Ätzprozessen.The invention thus has the great advantage that in a single integrated circuit arrangement ignition resistance and Control circuit for the ignition resistor can be integrated and at the same time good heat transfer from the squib resistor to the ignition powder is guaranteed. At the same time Creation of this with little effort and tolerance Heat transfer through the formation of the recesses in a row of standard etching processes.
Wie aus Figur 2 ersichtlich, kann erfindungsgemäß auch ausschließlich oder aber zusätzlich zur Aussparung in der elektrisch leitenden Schicht Alu1 eine Aussparung As in die Halbleiterschicht Si im Zündbereich Zb geätzt werden, um von dieser Seite her eine gute Wärmeanbindung des Zündwiderstandes an das Zündmaterial Zp zu gewährleisten. Das Zündmaterial Zp liegt dabei vorzugsweise immer an der Seite an, an der die Aussparung As freigeätzt ist.As can be seen from FIG. 2, the invention can also be used exclusively or in addition to the recess in the electrical conductive layer Alu1 a recess As in the semiconductor layer Si in the ignition area Zb to be etched by this A good thermal connection of the ignition resistor to ensure the ignition material Zp. The ignition material Zp is preferably always on the side where the Recess As is etched free.
Soll die Schaltungsanordnung in Flip-Chip-Technik auf einem Träger angeordnet werden, d.h. wird die Schaltungsanordnung direkt mit Kontaktflächen einer der elektrisch leitenden Schichten auf Gegenkontaktflächen eines Trägers gesetzt, so ist vorteilhafterweise nur die Halbleiterschicht Si mit der Aussparung As versehen. Es wird von der Seite der Halbleiterschicht Si her Zündmaterial Zp an die Schaltungsanordnung angepreßt.If the circuit arrangement in flip-chip technology on a Carriers are arranged, i.e. becomes the circuit arrangement directly with contact surfaces of one of the electrically conductive Layers placed on mating contact surfaces of a carrier, see above is advantageously only the semiconductor layer Si with the Provide recess As. It is from the side of the semiconductor layer Si her ignition material Zp pressed against the circuit arrangement.
Claims (5)
- Integrated circuit arrangement for heating ignition material,having an ignition resistor (3) and a control circuit (1) for controlling a current flow through the ignition resistor (3),having a semiconductor layer (Si) for components of the control circuit (1),having a further semiconductor layer (Ps) for electrically connecting the components, andhaving an electrically conductive layer (Alu1) for making electrical contact with the control circuit (1),in which a region (Zb) of the further semiconductor layer (Ps) is designed as ignition resistor (3),in which the electrically conductive layer (Alu1) and the semiconductor layer (Si) have/has a cutout (As) in said region (Zb), andin which the circuit arrangement is in direct contact with an ignition material (Zp).
- Integrated circuit arrangement according to Claim 1, in which the polysilicon layer (Ps) is arranged on the semiconductor layer (Si) in a manner isolated by an insulating layer (SiO2/1), and in which the electrically conductive layer (Alu1) is arranged on the polysilicon layer (Ps) in a manner isolated by a further insulating layer (SiO2/2).
- Integrated circuit arrangement according to Claim 2, in which further layers (SiO2/3, Alu2, SiO2/4, Alu3, Pa) are arranged on the electrically conductive layer (Alu1), and in which these further layers (SiO2/3, Alu2, SiO2/4, Alu3, Pa) have a cutout (As) in the region (Zb).
- Use of an integrated circuit arrangement according to one of the preceding claims in an igniter for triggering an occupant protection means, in which the circuit arrangement is in direct contact with an ignition material (Zp).
- Use of an integrated circuit arrangement according to Claim 4, in which the ignition material (Zp) in the region of the ignition resistor (1) bears on an electrical insulating layer (SiO2/2) covering the polysilicon layer (Ps).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19756563 | 1997-12-18 | ||
| DE19756563A DE19756563C1 (en) | 1997-12-18 | 1997-12-18 | Integrated circuit arrangement for heating ignition material and using such an integrated circuit arrangement |
| PCT/DE1998/003672 WO1999032846A1 (en) | 1997-12-18 | 1998-12-15 | Integrated circuit arrangement for heating ignition material and use of this integrated circuit arrangement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1040311A1 EP1040311A1 (en) | 2000-10-04 |
| EP1040311B1 true EP1040311B1 (en) | 2002-03-20 |
Family
ID=7852550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP98965613A Expired - Lifetime EP1040311B1 (en) | 1997-12-18 | 1998-12-15 | Integrated circuit arrangement for heating ignition material and use of this integrated circuit arrangement |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6302024B1 (en) |
| EP (1) | EP1040311B1 (en) |
| JP (1) | JP2001527204A (en) |
| KR (1) | KR20010024742A (en) |
| DE (2) | DE19756563C1 (en) |
| WO (1) | WO1999032846A1 (en) |
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| DE50014523D1 (en) * | 1999-08-25 | 2007-09-13 | Conti Temic Microelectronic | Pyrotechnic ignition system with integrated ignition circuit |
| US6772692B2 (en) * | 2000-05-24 | 2004-08-10 | Lifesparc, Inc. | Electro-explosive device with laminate bridge |
| GB2388420B (en) * | 2001-11-27 | 2004-05-12 | Schlumberger Holdings | Integrated activating device for explosives |
| US8091477B2 (en) * | 2001-11-27 | 2012-01-10 | Schlumberger Technology Corporation | Integrated detonators for use with explosive devices |
| US7168737B2 (en) * | 2002-01-25 | 2007-01-30 | Daicel Chemical Industries, Ltd. | Integrated circuit for air bag system |
| DE10240053A1 (en) * | 2002-08-30 | 2004-03-11 | Robert Bosch Gmbh | Detonator for pyrotechnic materials e.g. for use in motor vehicle airbag, comprises connection elements for electric cables, and a resistor located on a substrate |
| JP3803636B2 (en) | 2002-12-26 | 2006-08-02 | 本田技研工業株式会社 | Ignition device for bus connection |
| US20060144278A1 (en) * | 2004-12-20 | 2006-07-06 | Schlumberger Technology Corporation | Methods for Testing Single-Use Devices |
| TWI759865B (en) * | 2020-09-17 | 2022-04-01 | 大毅科技股份有限公司 | Firing resistor and method of manufacturing the same |
| CN117146655B (en) * | 2023-08-15 | 2024-04-02 | 广州成至智能机器科技有限公司 | Primer, firework shell and firework |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3537820A1 (en) * | 1985-10-24 | 1987-04-30 | Dynamit Nobel Ag | Electronic fuze |
| GB2190730B (en) * | 1986-05-22 | 1990-10-24 | Detonix Close Corp | Detonator firing element |
| US4843964A (en) * | 1988-02-01 | 1989-07-04 | The United States Of America As Represented By The United States Department Of Energy | Smart explosive igniter |
| US4831933A (en) * | 1988-04-18 | 1989-05-23 | Honeywell Inc. | Integrated silicon bridge detonator |
| US4976200A (en) * | 1988-12-30 | 1990-12-11 | The United States Of America As Represented By The United States Department Of Energy | Tungsten bridge for the low energy ignition of explosive and energetic materials |
| US5370053A (en) * | 1993-01-15 | 1994-12-06 | Magnavox Electronic Systems Company | Slapper detonator |
| US5912427A (en) * | 1993-02-26 | 1999-06-15 | Quantic Industries, Inc. | Semiconductor bridge explosive device |
| US5847309A (en) * | 1995-08-24 | 1998-12-08 | Auburn University | Radio frequency and electrostatic discharge insensitive electro-explosive devices having non-linear resistances |
| DE19653115B4 (en) * | 1996-12-19 | 2005-06-02 | Autoliv Development Ab | Ignition unit for a vehicle safety device |
| US6199484B1 (en) * | 1997-01-06 | 2001-03-13 | The Ensign-Bickford Company | Voltage-protected semiconductor bridge igniter elements |
| DE19702118C1 (en) * | 1997-01-22 | 1998-03-26 | Siemens Ag | Primer especially for triggering restraint device |
| US6178888B1 (en) * | 1998-01-20 | 2001-01-30 | Eg&G Star City, Inc. | Detonator |
-
1997
- 1997-12-18 DE DE19756563A patent/DE19756563C1/en not_active Expired - Fee Related
-
1998
- 1998-12-15 DE DE59803470T patent/DE59803470D1/en not_active Expired - Fee Related
- 1998-12-15 KR KR1020007006645A patent/KR20010024742A/en not_active Application Discontinuation
- 1998-12-15 EP EP98965613A patent/EP1040311B1/en not_active Expired - Lifetime
- 1998-12-15 WO PCT/DE1998/003672 patent/WO1999032846A1/en not_active Application Discontinuation
- 1998-12-15 JP JP2000525726A patent/JP2001527204A/en not_active Withdrawn
-
2000
- 2000-06-19 US US09/596,894 patent/US6302024B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1040311A1 (en) | 2000-10-04 |
| JP2001527204A (en) | 2001-12-25 |
| US6302024B1 (en) | 2001-10-16 |
| DE59803470D1 (en) | 2002-04-25 |
| DE19756563C1 (en) | 1999-08-19 |
| KR20010024742A (en) | 2001-03-26 |
| WO1999032846A1 (en) | 1999-07-01 |
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