EP0961921A2 - Thermal membrane sensor and method for the production thereof - Google Patents

Thermal membrane sensor and method for the production thereof

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Publication number
EP0961921A2
EP0961921A2 EP98963367A EP98963367A EP0961921A2 EP 0961921 A2 EP0961921 A2 EP 0961921A2 EP 98963367 A EP98963367 A EP 98963367A EP 98963367 A EP98963367 A EP 98963367A EP 0961921 A2 EP0961921 A2 EP 0961921A2
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EP
European Patent Office
Prior art keywords
membrane
layer
silicon
sensor
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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EP98963367A
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German (de)
French (fr)
Inventor
Klaus Heyers
Wilhelm Frey
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Robert Bosch GmbH
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Robert Bosch GmbH
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Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP0961921A2 publication Critical patent/EP0961921A2/en
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • G01K7/028—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples using microstructures, e.g. made of silicon

Definitions

  • the invention relates to a method for producing a thermal membrane sensor over a silicon substrate according to the preamble of claim 1 and to membrane sensors produced by this method.
  • a method for producing a thermal membrane sensor over a silicon substrate according to the preamble of claim 1 and to membrane sensors produced by this method.
  • Such a method and such sensor sensors are known from "ITG Technical Report 126: Sensor Technology and Application", pp. 285-289.
  • Thin layers deposited over a silicon substrate, in particular silicon layers, under which there is a spacing free space and which thus function as a membrane, are used in technology for various purposes.
  • An area of application for such membrane components is sensors and here in particular thermal membrane sensors with which physical quantities, e.g. a mass flow, can be detected by detecting a change in temperature in the thin membrane layer.
  • the thin membrane layer is thermally decoupled from the substrate as well as possible.
  • a thin membrane is used as the sensor carrier by anisotropic backside etching of a silicon wafer generated.
  • a double-sided lithography is used for masking, which is only possible through increased equipment complexity.
  • the deep etching pits form a mechanical weak point through the entire wafer, which forces it to be very careful when it is processed further in order not to break the wafer plate. Since the etch stop planes run obliquely in the crystal, the opening on the back is larger than on the front. This increases the required wafer area per sensor considerably.
  • the use of complicated layer packages made of metal and insulators on the silicon membrane can cause great problems with regard to drift of the layers and long-term stability, for example by detachment of the layers from one another.
  • I forming an etching mask leaving a region on the silicon substrate in which the membrane is to be formed on a main surface of the substrate; II electrochemically etching the exposed substrate area to a certain depth to form porous silicon within the exposed area; III removing the mask; IV depositing a thin membrane layer of silicon carbide or nitride; V opening predetermined areas in the membrane layer of silicon carbide or nitride from its upper surface; VI Selective formation of circuit structures on the upper surface of the membrane layer, and VII Removing the porous silicon layer (2) under the membrane layer by sacrificial layer etching.
  • circuit structures in the known thermal membrane sensor have been deposited by sputtering metal atoms on the upper surface of the membrane and are therefore sensitive to external mechanical and chemical influences.
  • step VI such a method is characterized in that in step VI the circuit structures are implanted in the upper surface of the membrane layer.
  • porous silicon thus offers the possibility of producing a silicon carbide or silicon nitride membrane inexpensively and quickly over the silicon substrate, and then, according to the invention, a masked or thermoresistive doping Manufacture thermoelectric sensor so that its circuit structures are largely protected against external mechanical and chemical influences.
  • the process according to the invention is not only suitable for the production of a thermal membrane sensor, but also for any type of thin elements using membranes exposed over a silicon substrate, e.g. also for the production of actuators that contain a membrane deflected by pressure or vacuum.
  • the membrane thickness achievable with the method is in a range from a few 10 to a few 100 n.
  • the porous silicon layer is preferably formed in the silicon substrate by an electrochemical anodizing process in hydrofluoric acid electrolyte.
  • the layer of silicon carbide or silicon nitride deposited above is preferably formed by a low-temperature LPCVD or PECVD process. Alternatively, such a thin layer can also be deposited by a reactive sputtering process. It should be emphasized here that a silicon carbide layer should be preferred with regard to its greater mechanical and chemical strength or resistance.
  • the openings in the silicon carbide or nitride layer are preferably made by a dry etching process, e.g. formed in a plasma etcher.
  • the desired conductor tracks for the thermo-resistive elements are now defined by a further lithography step and generated in at least one implantation step. The conductor tracks are formed, for example, from aluminum.
  • thermoresistive unit can be placed directly in the upper surface of the membrane with the help of a surface Design the micro-electronics so that the thermal sensor is CMOS-compatible and insensitive to external chemical and mechanical influences.
  • the inventive method can also be used to produce a thermal membrane sensor which uses the thermoelectric effect by using a thermopile made of two different substances with a large Seebeck effect, e.g. Antimony / Wi ⁇ muth or silicon / aluminum, is implanted in the upper surface of the membrane. An additional implantation is carried out after a further lithography.
  • a thermopile made of two different substances with a large Seebeck effect e.g. Antimony / Wi ⁇ muth or silicon / aluminum
  • a thin protective coating made of silicon carbide or silicon nitride can be applied over the entire surface.
  • the production method according to the invention can also be used to produce a thermal membrane sensor used as a radiation sensor (bolometer).
  • a radiation sensor bolometer
  • an additional absorber layer is applied, which consists, for example, of black gold or black silicon.
  • Black gold shows a broadband strong absorption of approximately 98% and is generated by thermal evaporation of gold in a low-pressure nitrogen atmosphere.
  • black silicon is generated, for example, in a plasma etcher by suitable process control.
  • porous silicon is used as
  • Support material and support for the thin membrane layer has served in a suitable solvent, such as.
  • porous silicon has an extremely enlarged surface area compared to the educt.
  • the ratio of the surface of nanoporous silicon to the surface of bulk silicon is approximately 10 6 .
  • the above-described method according to the invention makes it possible for the first time to manufacture a thermal sensor in surface micromechanics CMOS-compatible, the active surface of which has a very large substrate spacing due to the technology used for the porous silicon, and thus a substantial thermal decoupling from the substrate.
  • the support material of the membrane in particular silicon carbide, is chemically and mechanically very resistant.
  • thermal membrane sensor Due to the particularly simple process step sequence and the low wafer area consumption in comparison to conventional structuring steps (e.g. with KOH), the production of a thermal membrane sensor can be carried out very inexpensively. All process steps are available in semiconductor manufacturing.
  • the drawing figures 1A-1E show individual process steps of a preferred exemplary embodiment in the form of a schematic cross section through a wafer area in which a thermal membrane sensor is formed.
  • FIG. 1A shows process steps I and II, by means of which an etching mask 3 in the form of a photoresist is first applied to an upper surface of a correspondingly pretreated substrate block 1, which then exposed and then removed (step I).
  • the masked substrate 1 is then locally porously etched to a defined depth by electrochemical anodization in a hydrofluoric acid electrolyte, as a result of which a layer 2 of porous silicon is formed (step II).
  • Fig. 1B shows that over the layer 2 made of porous silicon after removing the mask 3, a thin membrane layer 4 made of silicon carbide or nitride, particularly preferably made of silicon carbide, either by a low-temperature LPCVD process or a low-temperature PECVD process or by reactive sputtering is separated (steps III and IV).
  • FIG. IC shows, the upper surface of the thin membrane layer 4 is lithographically structured and the membrane layer 4 by a dry etching process, e.g. in a plasma etcher, which creates openings 5, 7 which extend through the membrane layer 4 to the porous silicon layer 2 (step V).
  • a dry etching process e.g. in a plasma etcher
  • openings 5, 7 which extend through the membrane layer 4 to the porous silicon layer 2 (step V).
  • the membrane, the central region of layer 4 that can be seen in FIG. IC is connected to the peripheral region 4 'of the membrane layer by bridges.
  • thermoresistive elements in particular heater and sensor, are now defined by a further lithography step and implanted in an implantation step in the upper surface of the membrane layer 4 (step IV).
  • Aluminum is particularly suitable for implanting conductor tracks.
  • thermoresistive elements in the form of a thermopile can also be formed by implanting two different substances with a large Seebeck effect in the upper surface of the membrane 4. Such substances are, for example, antimony / bismuth and silicon / aluminum. there an additional implantation is carried out after a further lithography step.
  • an additional thin, all-over protective layer 9 made of silicon carbide or silicon nitride can be applied to protect against soiling, which can impair the function of the sensor.
  • the thermal membrane sensor is used as a radiation meter (bolometer), an additional absorber layer (not shown in the figure), e.g. made of black gold.
  • an additional absorber layer e.g. made of black gold.
  • the sacrificial layer 2 made of porous silicon is removed by means of a suitable solvent, such as e.g. Ammonia, removed.
  • a suitable solvent such as e.g. Ammonia

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Micromachines (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Measuring Volume Flow (AREA)

Abstract

The invention relates to a method for producing a membrane sensor, especially a thermal membrane sensor, over a silicon substrate (1). A thin layer (4) comprised of silicon carbide or silicon nitride is deposited over an area (2) made of porous silicon which is configured in the surface of the substrate (1). Openings (5, 7) are then formed in said silicon carbide or silicon nitride layer (4), said layer extending to the porous silicon layer (2), by means of a dry etching method. Afterwards, semiconductor and circuit-board structures (6) are implanted in the upper surface of the membrane layer (4) by means of lithographic steps and the sacrificial layer (2) comprised of porous silicon is then removed by a suitable solvent, for example ammoniac. As a result, a cavity (8) is produced underneath the membrane layer (4) which thermally decouples the sensor membrane from the substrate (1).

Description

THERMISCHER MEMBRANSENSOR UND VERFAHREN ZU SEINER THERMAL MEMBRANE SENSOR AND METHOD FOR ITS
HERSTELLUNGMANUFACTURING
Hintergrund der ErfindungBackground of the Invention
Die Erfindung befaßt sich mit einem Verfahren zur Herstellung eines thermischen Membransensors über einem Siliziumsubstrat nach dem Oberbegriff des Patentanspruchs 1 und mit nach diesem Verfahren hergestellten Membran- Sensoren. Ein solches Verfahren und solche Me bransensoren sind aus "ITG-Fachbericht 126: Sensoren-Technologie und Anwendung", S. 285-289 bekannt.The invention relates to a method for producing a thermal membrane sensor over a silicon substrate according to the preamble of claim 1 and to membrane sensors produced by this method. Such a method and such sensor sensors are known from "ITG Technical Report 126: Sensor Technology and Application", pp. 285-289.
Allgemeiner Stand der TechnikGeneral state of the art
über einem Siliziumsubstrat abgeschiedene dünne Schichten, insbesondere Siliziumschichten, unter denen sich ein Abstand haltender freier Raum befindet und die somit als Membran fungieren, werden in der Technik für verschiedene Zwecke verwendet. Ein Einsatzgebiet solcher Membranbauteile besteht bei Sensoren und hier insbesondere bei thermischen Membransensoren, mit denen physikalische Größen, z.B. ein Massenfluß, durch Erfassung einer Temperaturänderung in der dünnen Membranschicht erfaßbar sind.Thin layers deposited over a silicon substrate, in particular silicon layers, under which there is a spacing free space and which thus function as a membrane, are used in technology for various purposes. An area of application for such membrane components is sensors and here in particular thermal membrane sensors with which physical quantities, e.g. a mass flow, can be detected by detecting a change in temperature in the thin membrane layer.
Wichtig ist bei solchen thermischen Sensoren, daß die dünne Membranschicht möglichst gut thermisch vom Substrat entkoppelt ist. In konventionellen Technologien zur Herstellung von Flußsensoren oder Strahlungsdetektoren wird dazu beispielsweise als Sensorträger eine dünne Membran durch anisotropes Rückseitenätzen eines Siliziumwa ers erzeugt. Zur Maskierung wird eine doppelseitige Lithographie eingesetzt, was nur durch einen erhöhten apparativen Aufwand möglich ist. Außerdem bilden die tiefen Ätzgruben durch den ganzen Wafer eine mechanische Schwachstelle, die bei einer späteren Weiterverarbeitung desselben zu großer Vorsicht zwingt, um die Waferplatte nicht zu zerbrechen. Da die Ätzεtoppebenen schräg im Kristall verlaufen, ist die Öffnung auf der Rückseite größer als auf der Vorderseite. Dadurch erhöht sich die notwendige Waferflache pro Sensor beträchtlich. Zusätzlich kann die Verwendung komplizierter Schichtpakete aus Metall und Isolatoren auf der Silizium-Membran große Probleme hinsichtlich einer Drift der Schichten und der Langzeitstabilität, z.B. durch Ablösung der Schichten voneinander, hervorrufen.It is important with such thermal sensors that the thin membrane layer is thermally decoupled from the substrate as well as possible. In conventional technologies for the production of flow sensors or radiation detectors, for example, a thin membrane is used as the sensor carrier by anisotropic backside etching of a silicon wafer generated. A double-sided lithography is used for masking, which is only possible through increased equipment complexity. In addition, the deep etching pits form a mechanical weak point through the entire wafer, which forces it to be very careful when it is processed further in order not to break the wafer plate. Since the etch stop planes run obliquely in the crystal, the opening on the back is larger than on the front. This increases the required wafer area per sensor considerably. In addition, the use of complicated layer packages made of metal and insulators on the silicon membrane can cause great problems with regard to drift of the layers and long-term stability, for example by detachment of the layers from one another.
Der oben erwähnte ITG-Fachbericht 126 vermeidet diese Probleme durch die Anwendung der Technologie des porösen Siliziums. Im einzelnen weist dieses Verfahren folgende Schritte auf:The ITG report 126 mentioned above avoids these problems by using porous silicon technology. In detail, this procedure has the following steps:
I Ausbildung einer einen Bereich auf dem Siliziumsubstrat, in dem die Membran gebildet werden soll, freilassenden Ätzmaske auf einer Hauptfläche des Substrats; II elektrochemisches Ätzen des freiliegenden Substratbereichs bis in eine bestimmte Tiefe unter Bildung von porösem Silizium innerhalb des freiliegenden Bereichs; III Entfernen der Maske; IV Abscheiden einer dünnen Membranschicht aus Siliziumcarbid oder -nitrid; V Öffnen vorbestimmter Bereiche in der Membranschicht aus Siliziumcarbid oder -nitrid von ihrer oberen Oberfläche her; VI Selektive Ausbildung von Schaltungsstrukturen auf der oberen Oberfläche der Membranschicht, und VII Entfernen der porösen Siliziumschicht (2) unter der Me branschicht durch Opferεchichtätzung.I forming an etching mask leaving a region on the silicon substrate in which the membrane is to be formed on a main surface of the substrate; II electrochemically etching the exposed substrate area to a certain depth to form porous silicon within the exposed area; III removing the mask; IV depositing a thin membrane layer of silicon carbide or nitride; V opening predetermined areas in the membrane layer of silicon carbide or nitride from its upper surface; VI Selective formation of circuit structures on the upper surface of the membrane layer, and VII Removing the porous silicon layer (2) under the membrane layer by sacrificial layer etching.
Allerdings sind die Schaltungsεtrukturen bei dem bekannten thermischen Membransensor durch Sputtern von Metallatomen auf der oberen Oberfläche der Membran abgeschieden worden und dadurch empfindlich gegen äußere mechanische und chemische Einflüsse.However, the circuit structures in the known thermal membrane sensor have been deposited by sputtering metal atoms on the upper surface of the membrane and are therefore sensitive to external mechanical and chemical influences.
Kurzfassung der ErfindungSummary of the invention
Angesichts des oben Gesagten ist es Aufgabe der Erfindung, ein Verfahren zur Herstellung eines thermischen Membran- εenεors mit Hilfe der Technologie des porösen Siliziums und einen mit diesem Verfahren hergestellten thermischen Membransensor für die Erfassung von Maεεenflüssen εo zu ermöglichen, daß εich die Schaltungεstruktur des thermischen Me bransensors mit Oberflächen-Mikromechanik- prozessen εo herstellen läßt, daß dessen aktive Fläche einen großen Substratabstand hat und die Schaltungselemente gegen äußere mechanische und chemische Beeinfluεεung weitgehend geschützt sind.In view of the above, it is an object of the invention to enable a method for producing a thermal membrane sensor using the technology of porous silicon and a thermal membrane sensor produced with this method for detecting mass flows so that the circuit structure of the thermal measurement can be manufactured with surface micromechanical processes so that its active surface has a large substrate spacing and the circuit elements are largely protected against external mechanical and chemical influences.
Die obige Aufgabe wird erfindungsgemäß durch die in den beiliegenden Patentansprüchen enthaltenen Merkmale gelöst.The above object is achieved according to the invention by the features contained in the accompanying claims.
Inεbesondere ist ein solches Verfahren dadurch gekennzeichnet, daß in Schritt VI die Schaltungεstrukturen in die obere Oberfläche der Membranschicht implantiert werden.In particular, such a method is characterized in that in step VI the circuit structures are implanted in the upper surface of the membrane layer.
Somit wird mit Hilfe der Technologie deε poröεen Siliziumε die Möglichkeit geboten, kostengünstig und schnell eine Siliziumcarbid- oder Siliziumnitrid-Membran über dem Siliziumsubstrat zu erzeugen und anschließend erfindungsgemäß durch maskierte Dotierung einen thermoresistiven oder thermoelektrischen Sensor so herzustellen, daß dessen Schaltungsstrukturen weitgehend gegen äußere mechanische und chemische Einflüsse geschützt sind.The technology of the porous silicon thus offers the possibility of producing a silicon carbide or silicon nitride membrane inexpensively and quickly over the silicon substrate, and then, according to the invention, a masked or thermoresistive doping Manufacture thermoelectric sensor so that its circuit structures are largely protected against external mechanical and chemical influences.
Jedoch ist der erfindungsgemäße Prozeß nicht nur zur Herstellung eines thermischen Membranεensors geeignet, sondern für jede Art von dünne, über einem Siliziumsubstrat freiliegende Membranen verwendende Elemente, z.B. auch für die Herstellung von Aktoren, die eine durch Druck oder Unterdruck ausgelenkte Membran enthalten. Die mit dem Verfahren erreichbare Membrandicke liegt in einem Bereich von einigen 10 bis einige 100 n .However, the process according to the invention is not only suitable for the production of a thermal membrane sensor, but also for any type of thin elements using membranes exposed over a silicon substrate, e.g. also for the production of actuators that contain a membrane deflected by pressure or vacuum. The membrane thickness achievable with the method is in a range from a few 10 to a few 100 n.
Bevorzugt wird die poröse Siliziumschicht im Siliziu - subεtrat durch einen elektrochemischen Anodisierungsprozeß in Flußsäureelektrolyt gebildet. Die darüber abgeschiedene Schicht aus Siliziumcarbid oder Siliziumnitrid wird bevorzugt durch einen Niedertemperatur-LPCVD- oder -PECVD- Prozeß gebildet. Alternativ kann solch eine dünne Schicht auch durch einen reaktiven Sputter-Prozeß abgeschieden werden. Hier ist hervorzuheben, daß eine Siliziumcarbid- schicht hinsichtlich ihrer größeren mechanischen und chemischen Festigkeit bzw. Widerstandsfähigkeit zu bevorzugen ist. Bei der anschließenden lithographiεchen Strukturierung werden die Öffnungen in der Ξiliziumcarbid- oder -nitridεchicht bevorzugt durch einen Trockenätzprozeß, z.B. in einem Plaεmaätzer gebildet. Durch einen weiteren Lithographieεchritt werden nun die gewünschten Leiterbahnen für die thermoresiεtiven Elemente (Heizer und Sensor) definiert und in wenigstens einem implantationsschritt erzeugt. Die Leiterbahnen werden beiεpielsweise aus Aluminium gebildet.The porous silicon layer is preferably formed in the silicon substrate by an electrochemical anodizing process in hydrofluoric acid electrolyte. The layer of silicon carbide or silicon nitride deposited above is preferably formed by a low-temperature LPCVD or PECVD process. Alternatively, such a thin layer can also be deposited by a reactive sputtering process. It should be emphasized here that a silicon carbide layer should be preferred with regard to its greater mechanical and chemical strength or resistance. In the subsequent lithographic structuring, the openings in the silicon carbide or nitride layer are preferably made by a dry etching process, e.g. formed in a plasma etcher. The desired conductor tracks for the thermo-resistive elements (heater and sensor) are now defined by a further lithography step and generated in at least one implantation step. The conductor tracks are formed, for example, from aluminum.
Auf diese Weise läßt sich ohne störanfällige Zwischenschicht die thermoresistive Einheit direkt in der oberen Oberfläche der Membran mit Hilfe einer Oberflächen- Mikro echanik derart ausbilden, daß der thermische Sensor CMOS-kompatibel und gegen äußere chemische und mechanische Einflüsse unempfindlich ist.In this way, the thermoresistive unit can be placed directly in the upper surface of the membrane with the help of a surface Design the micro-electronics so that the thermal sensor is CMOS-compatible and insensitive to external chemical and mechanical influences.
Alternativ zu einem thermischen Membransensor, bei dem das Meßsignal durch thermoresistive Meßelemente erzeugt wird, kann mit dem erfindungεge äßen Verfahren auch ein thermischer Membransensor hergestellt werden, der den thermoelektriεchen Effekt ausnutzt, indem eine Thermosäule aus zwei verschiedenen Stoffen mit großem Seebeck-Effekt, wie z.B. Antimon/Wiεmuth oder Silizium/Aluminium, in die obere Oberfläche der Membran implantiert wird. Dabei wird nach einer weiteren Lithographie eine zusätzliche Implantation durchgeführt.As an alternative to a thermal membrane sensor, in which the measurement signal is generated by thermoresistive measuring elements, the inventive method can also be used to produce a thermal membrane sensor which uses the thermoelectric effect by using a thermopile made of two different substances with a large Seebeck effect, e.g. Antimony / Wiεmuth or silicon / aluminum, is implanted in the upper surface of the membrane. An additional implantation is carried out after a further lithography.
Zum zusätzlichen Schutz vor Verschmutzungen, die eine Funktionsbeeinträchtigung des Sensors hervorrufen können, kann eine dünne ganzflächige Schutzschicht aus Siliziumcarbid oder Siliziumnitrid aufgebracht werden.For additional protection against soiling, which can impair the function of the sensor, a thin protective coating made of silicon carbide or silicon nitride can be applied over the entire surface.
Ferner kann daε erfindungsgemäße Herstellungsverfahren auch zur Herstellung eines als Strahlungsεensor (Bolometer) eingesetzten thermischen Membransensorε verwendet werden. Hierzu wird eine zusätzliche Absorberschicht aufgebracht, die beispielsweise aus schwarzem Gold oder schwarzem Silizium besteht. Schwarzes Gold zeigt eine breitbandige starke Abεorption von ca. 98% und wird durch thermisches Verdampfen von Gold in einer Niederdruck-Stickstoff- atmoεphäre erzeugt. Schwarzes Silizium wird nach der Deposition beispielsweise in einem Plasmaätzer durch geeignete Prozeßführung erzeugt.Furthermore, the production method according to the invention can also be used to produce a thermal membrane sensor used as a radiation sensor (bolometer). For this purpose, an additional absorber layer is applied, which consists, for example, of black gold or black silicon. Black gold shows a broadband strong absorption of approximately 98% and is generated by thermal evaporation of gold in a low-pressure nitrogen atmosphere. After deposition, black silicon is generated, for example, in a plasma etcher by suitable process control.
Schließlich wird das poröεe Silizium, daε biεlang alsFinally, the porous silicon is used as
Stützmaterial und Unterlage für die dünne Membranschicht gedient hat, in einem geeigneten Lösungsmittel, wie z.B.Support material and support for the thin membrane layer has served in a suitable solvent, such as.
Ammoniak entfernt. Dadurch wird die Sensormembran freigelegt und ist damit vom Substrat thermisch entkoppelt. Hier ist anzumerken, daß poröses Silizium eine im Vergleich zum Edukt extrem vergrößerte Oberfläche besitzt. Das Verhältnis der Oberfläche von nanoporösem Silizium zur Oberfläche von Bulkεilizium beträgt etwa 106.Ammonia removed. This will make the sensor membrane exposed and is thus thermally decoupled from the substrate. It should be noted here that porous silicon has an extremely enlarged surface area compared to the educt. The ratio of the surface of nanoporous silicon to the surface of bulk silicon is approximately 10 6 .
Daε oben geschilderte erfindungsgemäße Verfahren macht es erstmals möglich, einen thermischen Sensor in Oberflächen- Mikromechanik CMOS-kompatibel herzustellen, dessen aktive Fläche aufgrund der verwendeten Technologie des porösen Siliziums einen sehr großen Substratabstand und somit eine weitgehende thermische Entkopplung vom Substrat besitzt. Daε Trägermaterial der Membran, insbesondere Siliziumcarbid, ist chemisch und mechanisch sehr widerstandsfähig.The above-described method according to the invention makes it possible for the first time to manufacture a thermal sensor in surface micromechanics CMOS-compatible, the active surface of which has a very large substrate spacing due to the technology used for the porous silicon, and thus a substantial thermal decoupling from the substrate. The support material of the membrane, in particular silicon carbide, is chemically and mechanically very resistant.
Durch die besonders einfache Prozeßschrittfolge und den im Vergleich zu herkömmlichen Strukturierungεschritten (z.B. mit KOH) geringen Waferflächenverbrauch kann die Herstellung eines thermiεchen Membransenεors sehr kostengünεtig ausgeführt werden. Sämtliche Prozeßschritte sind in der Halbleiterfertigung verfügbar.Due to the particularly simple process step sequence and the low wafer area consumption in comparison to conventional structuring steps (e.g. with KOH), the production of a thermal membrane sensor can be carried out very inexpensively. All process steps are available in semiconductor manufacturing.
Eine bevorzugte Auεführungsfor der Prozeßschritte der erfindungsgemäßen Herεtellungεverfahrenε wird nachstehend anhand der beiliegenden Zeichnung näher beschrieben.A preferred embodiment of the process steps of the production method according to the invention is described in more detail below with reference to the accompanying drawing.
Die Zeichnungsfiguren 1A-1E zeigen einzelne Prozeßschritte eines bevorzugten Ausführungεbeispiels in Form eines εchematiεchen Querεchnittε durch einen Waferbereich, in dem ein thermiεcher Membranεensor gebildet wird.The drawing figures 1A-1E show individual process steps of a preferred exemplary embodiment in the form of a schematic cross section through a wafer area in which a thermal membrane sensor is formed.
Fig. 1A zeigt Prozeßschritte I und II, durch die zunächst auf einer oberen Oberfläche eines entsprechend vorbehandelten Substratblocks 1 eine Ätzmaske 3 in Form eines Photolacks aufgebracht wird, der dann in einem Bereich, in dem eine Membran gebildet werden soll, belichtet und anschließend entfernt wird (Schritt I). Dann wird durch elektrochemische Anodisierung in einem Flußsäure-Elektrolyten das maskierte Substrat 1 bis in eine definierte Tiefe lokal porös geätzt, wodurch eine Schicht 2 aus porösem Silizium gebildet wird (Schritt II).1A shows process steps I and II, by means of which an etching mask 3 in the form of a photoresist is first applied to an upper surface of a correspondingly pretreated substrate block 1, which then exposed and then removed (step I). The masked substrate 1 is then locally porously etched to a defined depth by electrochemical anodization in a hydrofluoric acid electrolyte, as a result of which a layer 2 of porous silicon is formed (step II).
Fig. 1B zeigt, daß über der Schicht 2 aus porösem Silizium nach Entfernen der Maske 3 eine dünne Membranschicht 4 aus Siliziumcarbid oder -nitrid insbesondere bevorzugt aus Siliziumcarbid entweder durch einen Niedertemperatur-LPCVD- Prozeß oder einen Niedertemperatur-PECVD-Prozeß oder durch reaktives Sputtern abgeschieden wird (Schritte III und IV).Fig. 1B shows that over the layer 2 made of porous silicon after removing the mask 3, a thin membrane layer 4 made of silicon carbide or nitride, particularly preferably made of silicon carbide, either by a low-temperature LPCVD process or a low-temperature PECVD process or by reactive sputtering is separated (steps III and IV).
Anschließend wird, wie Fig. IC zeigt, die obere Oberfläche der dünnen Membranεchicht 4 lithographiεch εtrukturiert und die Membranschicht 4 durch ein Trockenätzverfahren, z.B. in einem Plasmaätzer, geöffnet, wodurch Öffnungen 5, 7 entstehen, die durch die Membranschicht 4 biε zur porösen Siliziumschicht 2 reichen (Schritt V). Selbstverεtändlich steht die Membran, der in Fig. IC zu erkennende mittlere Bereich der Schicht 4, durch Brücken mit dem peripheren Bereich 4' der Membranschicht in Verbindung.Subsequently, as FIG. IC shows, the upper surface of the thin membrane layer 4 is lithographically structured and the membrane layer 4 by a dry etching process, e.g. in a plasma etcher, which creates openings 5, 7 which extend through the membrane layer 4 to the porous silicon layer 2 (step V). Of course, the membrane, the central region of layer 4 that can be seen in FIG. IC, is connected to the peripheral region 4 'of the membrane layer by bridges.
Gemäß Fig. 1D werden nun durch einen weiteren Lithographieschritt die gewünschten Halbleiter- und Leiterstrukturen bzw. Bahnen für die thermoresistiven Elemente, insbesondere Heizer und Sensor definiert, und in einem Implantationsεchritt in die obere Oberfläche der Membranschicht 4 implantiert (Schritt IV). Zur Implantation von Leiterbahnen eignet sich besonders Aluminium. Selbstverεtändlich lassen sich auch thermoresiεtive Elemente in Form einer Thermoεäule durch Implantation zweier verεchiedener Stoffe mit großem Seebeck-Effekt in der oberen Oberfläche der Membran 4 bilden. Solche Stoffe εind z.B. Antimon/Wismuth und Silizium/Aluminium. Dabei wird nach einem weiteren Lithographieschritt eine zusätzliche Implantation durchgeführt.According to FIG. 1D, the desired semiconductor and conductor structures or tracks for the thermoresistive elements, in particular heater and sensor, are now defined by a further lithography step and implanted in an implantation step in the upper surface of the membrane layer 4 (step IV). Aluminum is particularly suitable for implanting conductor tracks. Of course, thermoresistive elements in the form of a thermopile can also be formed by implanting two different substances with a large Seebeck effect in the upper surface of the membrane 4. Such substances are, for example, antimony / bismuth and silicon / aluminum. there an additional implantation is carried out after a further lithography step.
Anschließend kann, wenn dies erforderlich ist, zum Schutz vor Verschmutzungen, die eine Funktionsbeeinträchtigung des Sensors hervorrufen können, eine zusätzliche dünne ganzflächige Schutzschicht 9 aus Siliziumcarbid oder Siliziumnitrid aufgebracht werden.Then, if this is necessary, an additional thin, all-over protective layer 9 made of silicon carbide or silicon nitride can be applied to protect against soiling, which can impair the function of the sensor.
Wenn der thermische Membranεensor als Strahlungsmesεer (Bolometer) verwendet wird, wird eine zuεätzliche (in der Figur nicht gezeigte) Absorberschicht, z.B. aus schwarzem Gold, aufgebracht. Anschließend wird gemäß Fig. 1E durch einen abschließenden Prozeßεchritt VII die Opferschicht 2 aus porösem Silizium mit Hilfe eines geeigneten Lösungsmittels, wie Z.B. Ammoniak, entfernt. Dadurch wird die Sensormembran 4 freigelegt, und durch den darunter entstandenen Hohlraum iεt die thermiεche Entkopplung der Membran und der thermoreεiεtiven Elemente 6 von dem Substrat 1 erreicht. If the thermal membrane sensor is used as a radiation meter (bolometer), an additional absorber layer (not shown in the figure), e.g. made of black gold. Subsequently, according to FIG. 1E, the sacrificial layer 2 made of porous silicon is removed by means of a suitable solvent, such as e.g. Ammonia, removed. As a result, the sensor membrane 4 is exposed, and the hollow space created underneath achieves the thermal decoupling of the membrane and the thermo-resistive elements 6 from the substrate 1.

Claims

PATENTANSPRÜCHE PATENT CLAIMS
1. Verfahren zur Herstellung einer dünnen freiliegenden1. Method of making a thin exposed
Membran über einem Siliziumsubstrat (1) insbeεondere für einen thermiεchen Membranεensor mit folgenden Schritten: I Ausbildung einer einen Bereich auf dem Silizium- εubstrat (1), in dem die Membran gebildet werden soll, freilassenden Ätzmaske auf einer Hauptfläche des Substrats;Membrane over a silicon substrate (1), in particular for a thermal membrane sensor, with the following steps: I formation of an etching mask on a main surface of the substrate leaving an area on the silicon substrate (1) in which the membrane is to be formed;
II elektrochemisches Ätzen des freiliegenden Subεtrat- bereichε bis in eine bestimmte Tiefe unter Bildung von porösem Silizium (2) innerhalb des freiliegenden Bereichs;II electrochemical etching of the exposed substrate area to a certain depth with formation of porous silicon (2) within the exposed area;
III Entfernen der Maske;III removing the mask;
IV Abscheiden einer dünnen Membranschicht (4) aus Siliziumcarbid oder -nitrid;IV depositing a thin membrane layer (4) made of silicon carbide or nitride;
V öffnen vorbestimmter Bereiche (5, 7) in der Membranschicht (4) aus Siliziumcarbid oder -nitrid von ihrer oberen Oberfläche her;V open predetermined areas (5, 7) in the membrane layer (4) made of silicon carbide or nitride from their upper surface;
VI Selektive Ausbildung von Schaltungsstrukturen (6) auf der oberen Oberfläche der Membranschicht (4), undVI Selective formation of circuit structures (6) on the upper surface of the membrane layer (4), and
VII Entfernen der porösen Siliziumschicht (2) unter der Membranschicht (4) durch Opferschichtätzung, dadurch gekennzeichnet, daß in Schritt VI die Schaltungsstrukturen in die obere Oberfläche der Membranschicht implantiert werden.VII Removing the porous silicon layer (2) under the membrane layer (4) by sacrificial layer etching, characterized in that in step VI the circuit structures are implanted in the upper surface of the membrane layer.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Ätzschritt II zur Bildung der porösen Siliziumschicht (2) einen elektrochemischen Anodisierungsprozeß in Flußsäureelektrolyt aufweist. 2. The method according to claim 1, characterized in that the etching step II to form the porous silicon layer (2) has an electrochemical anodizing process in hydrofluoric acid electrolyte.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß der Abscheideschritt IV einen Nieder- temperatur-LPCVD- oder -PECVD-Prozeß aufweist.3. The method according to claim 1 or 2, characterized in that the deposition step IV has a low-temperature LPCVD or PECVD process.
4. Verfahren nach Anspruch 1 oder 2 , dadurch gekennzeichnet, daß die dünne Siliziumcarbid- oder -nitrid- embranεchicht (4) in Schritt IV durch reaktives Sputtern abgeschieden wird.4. The method according to claim 1 or 2, characterized in that the thin silicon carbide or nitride embranεchicht (4) is deposited in step IV by reactive sputtering.
5. Verfahren nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß die Öffnungen (5, 7) in der5. The method according to any one of the preceding claims, characterized in that the openings (5, 7) in the
Siliziumcarbid- oder -nitridmembranschicht in Schritt V durch einen Trockenätzprozeß gebildet werden.Silicon carbide or nitride membrane layer are formed in step V by a dry etching process.
6. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß der Trockenätzprozeß im Schritt V durch Plasmaätzung erfolgt.6. The method according to claim 5, characterized in that the dry etching process in step V is carried out by plasma etching.
7. Verfahren nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß die im Schritt VI ausgebildeten7. The method according to any one of the preceding claims, characterized in that the trained in step VI
Schaltungsstrukturen (6) Leiterbahnen auε Aluminium enthalten.Circuit structures (6) contain conductor tracks made of aluminum.
8. Verfahren nach einem der vorangehenden Anεprüche, dadurch gekennzeichnet, daß die im Schritt VI ausgebildeten8. The method according to any one of the preceding claims, characterized in that those formed in step VI
Schaltungsstrukturen (6) Halbleiterelemente enthalten.Circuit structures (6) contain semiconductor elements.
9. Verfahren nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß die Opferschichtätzung in Schritt VII z.B. mit Ammoniak, KOH oder Tetramethyl- ammoniumhydroxid auεgeführt wird.9. The method according to any one of the preceding claims, characterized in that the sacrificial layer etching in step VII e.g. with ammonia, KOH or tetramethylammonium hydroxide.
10. Verfahren nach einem der vorangehenden Anεprüche, dadurch gekennzeichnet, daß ein zuεätzlicher Schritt eine dünne ganzflächige Schutzschicht (9) auf der oberen Oberfläche der Membran (4) aufbringt. 10. The method according to any one of the preceding claims, characterized in that an additional step applies a thin, all-over protective layer (9) on the upper surface of the membrane (4).
11. Verfahren nach Anεpruch 10, dadurch gekennzeichnet, daß die dünne ganzflächige Schutzεchicht (9) auf der oberen Oberfläche der Membran Siliziumcarbid oder Ξiliziumnitrid aufweiεt.11. The method according to Anεpruch 10, characterized in that the thin full-surface protective layer (9) on the upper surface of the membrane has silicon carbide or silicon nitride.
12. Thermiεcher Membransensor, hergestellt mit dem Verfahren nach einem der vorangehenden Anεprüche.12. Thermal membrane sensor, produced with the method according to one of the preceding claims.
13. Thermiεcher Membranεensor nach Anεpruch 12, dadurch gekennzeichnet, daß die in der oberen Oberfläche der Membran implantierten Schaltungsεtrukturen eine Thermoεäule aus zwei verεchiedenen Stoffen mit großen Seebeck-Effekt aufweiεen.13. Thermal membrane sensor according to claim 12, characterized in that the circuit structures implanted in the upper surface of the membrane have a thermopile made of two different substances with a large Seebeck effect.
14. Thermiεcher Membransenεor nach Anspruch 12, dadurch gekennzeichnet, daß er als Strahlungssensor ausgebildet ist und eine zusätzliche, über der dünnen ganzflächigen Schutzschicht (9) ausgebildete Abεorberschicht aufweist.14. Thermiεcher Membransenεor according to claim 12, characterized in that it is designed as a radiation sensor and has an additional Abεorberschicht formed over the thin all-over protective layer (9).
15. Thermischer Membranεenεor nach Anεpruch 14, dadurch gekennzeichnet, daß die zuεätzliche Absorberεchicht z.B. aus schwarzem Gold oder schwarzem Silizium besteht. 15. Thermal membrane sensor according to claim 14, characterized in that the additional absorber layer e.g. consists of black gold or black silicon.
EP98963367A 1997-11-25 1998-11-23 Thermal membrane sensor and method for the production thereof Ceased EP0961921A2 (en)

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