EP0950241A1 - Optoelectronic sensor module - Google Patents

Optoelectronic sensor module

Info

Publication number
EP0950241A1
EP0950241A1 EP98961060A EP98961060A EP0950241A1 EP 0950241 A1 EP0950241 A1 EP 0950241A1 EP 98961060 A EP98961060 A EP 98961060A EP 98961060 A EP98961060 A EP 98961060A EP 0950241 A1 EP0950241 A1 EP 0950241A1
Authority
EP
European Patent Office
Prior art keywords
laser
sensor module
emitter component
cooling element
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98961060A
Other languages
German (de)
French (fr)
Inventor
Werner Späth
Werner Kuhlmann
Hans-Ludwig Althaus
Wolfgang Gramann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Daewoo Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daewoo Electronics Co Ltd filed Critical Daewoo Electronics Co Ltd
Publication of EP0950241A1 publication Critical patent/EP0950241A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B5/596—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following on disks
    • G11B5/59677—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following on disks with optical servo tracking
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/54—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head into or out of its operative position or across tracks
    • G11B5/55—Track change, selection or acquisition by displacement of the head
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/54—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head into or out of its operative position or across tracks
    • G11B5/55—Track change, selection or acquisition by displacement of the head
    • G11B5/5521—Track change, selection or acquisition by displacement of the head across disk tracks
    • G11B5/5526—Control therefor; circuits, track configurations or relative disposition of servo-information transducers and servo-information tracks for control thereof
    • G11B5/553—Details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/123—Integrated head arrangements, e.g. with source and detectors mounted on the same substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B33/00—Constructional parts, details or accessories not provided for in the other groups of this subclass
    • G11B33/14—Reducing influence of physical parameters, e.g. temperature change, moisture, dust

Definitions

  • the invention relates to an optoelectronic sensor module, in particular for using m magnetic read / write heads, m magnetic recording and / or reproducing devices.
  • the track spacing on the storage medium is approximately 100 ⁇ m with mechanical guidance of the magnetic write / read head.
  • a significant reduction in this distance, e.g. B. by a factor of 100 (this increases the storage capacity of the magnetic storage medium by a factor of 100) is not possible with a conventionally used magnetomechanical tracking system.
  • a correspondingly more precise tracking is opto-mechanically possible and has been used successfully for years with compact disk (CD) drives.
  • a laser beam is focused on the corresponding disk surface and is reflected by it on a suitable detector.
  • a modulated electrical signal is generated at the detector, which can also be used for data detection and guidance in addition to data transfer.
  • track spacing in the ⁇ m range can be achieved.
  • Semiconductor laser components for the use m optical write / read heads of optical recording and playback devices are known for example from EP 199 565.
  • the two photodetectors are seen in the radiation direction of the semiconductor laser chip, are arranged one behind the other and lie on the beam axis of the laser beam emitted by the semiconductor laser chip.
  • a partially transparent U steering mirror is arranged above the signal detector, which transmits a small part of the radiation emitted by the semiconductor laser chip to the monitor detector hm and deflects the larger part of the laser radiation away from the silicon plate by reflection by 90 °.
  • the reflected laser radiation strikes the CD, is reflected back there to the semiconductor laser component hm in accordance with the reflection pattern attached to it, passes through the partially transparent deflection mirror and strikes the signal detector arranged below it.
  • the storage device is to use the laser source as a discrete component in the form of a semiconductor laser chip in a metallic TO-housing (diameter about 5 mm) to ⁇ together with the necessary discrete Strahltormungs- and Strahlbowungs optics and the associated detectors, which are also m discrete metallic TO-Gehausen are mounted side by side on the mechanically moved Tr ⁇ gerarm the magnetic Schre ⁇ b - / read head to attach.
  • This construction of the laser source with the associated detectors and the optical components on the support arm of the magnetic write / read head significantly increases both its design and its mass. This has two major disadvantages:
  • the greater inertial mass of the arm which necessitates higher acceleration forces to move the arm, limits its mobility and thus increases the access time to the data tracks of the magnetic storage medium and, consequently, the data access time.
  • the TO components of the semiconductor laser chip and the detectors enlarge the dimensions of the overall construction of the corresponding storage drive in such a way that the standard housing height of 1 inch can no longer be achieved.
  • An opto-magnetic floppy disk drive constructed in accordance with this technology can therefore not immediately replace the magnetic floppy disk drives previously used, since it cannot be installed in the standard installation bays of personal computers and even less of laptops.
  • An optical sensor module is known for example from US 4,958,245. This serves to determine the position of a carrier head relative to a magnetic data carrier and has an infrared transmitter diode, a converging lens, a deflecting mirror and a photodetector in the form of discrete components, which are arranged in a separate housing.
  • the space requirement and the mass of this sensor module is also relatively large.
  • the present invention is based on the object to develop an optoelectronic sensor module having a clotting ⁇ ge mass, a small footprint and a reduced susceptibility to failure due to scattered laser radiation. Furthermore, a technically simple manufacturing method for such an optoelectronic sensor module is to be specified, which enables economical mass production.
  • the sensor module should be mountable with conventional assembly systems.
  • an optoelectronic sensor module for detecting reflection patterns on a magnetic data carrier, in which a laser emitter component with a laser radiation axis is attached to a first main surface of a cooling element. At least one first sensor photodetector for reading out the track data is formed in the cooling element, laterally offset from the laser emission axis, in addition to the laser emitter component. Electrically conductive connection pads (bond pads) are formed or applied to the first main surface of the cooling element and are connected to electrical connections of the laser emitter component or the sensor photodetector by means of electrical interconnects which are formed or applied to one another on the first main surface.
  • a lens arrangement is provided on the side of the laser emitter component opposite the cooling element, which is attached to the cooling element by means of at least one support web.
  • the laser emitter component is arranged in such a way that, during operation, at least a first part of a laser radiation emitted by it is coupled out of the sensor module through the lens arrangement directly or after deflection with a reflection element.
  • the decoupled pelte laser radiation is at least in part on the Refle ⁇ xionsmustern on the arranged outside of the sensor module to the sensor magnetic disk photodetector hm modu ⁇ linesberichtuckreflektiert and received from.
  • the invented optoelectronic sensor module solves the above-described problems of too great a mass and too great a height by the fact that the sensor photodetector, the laser emitter component, the conductor tracks for these electronic components, the connection surfaces (bond pads) and the support web for the lens arrangement integrated on a single cooling element (sensor-photodetector) or arranged and thus combined in a confined space.
  • Interfering laser scatter radiation is reduced in that the sensor photodetector is not on the radiation axis of the laser emitter component, but is positioned next to it
  • the cooling element is a carrier plate which essentially has silicon and which has an integrated sensor photodiode.
  • An insulation layer is applied to the carrier plate, on which the connection areas (bond pads) and the electrical conductor tracks are applied.
  • Silicon is a very good heat conductor and is therefore particularly suitable as a material for the cooling element.
  • Photodetectors such as photodiodes and phototransistors, can advantageously be produced in silicon in a simple manner. The associated technology itself is known and is therefore not explained in more detail here.
  • the laser emitter component is between a first and a second Support bridge arranged, which consist essentially of glass.
  • a bonding layer consisting essentially of amorphous Si ⁇ lizium, disposed neck and the two webs are fastened by means of bonding layer Toggle odischem bonding on the corresponding.
  • FIG. 1 shows a schematic representation of a section through the exemplary embodiment
  • FIG. 2 shows a schematic representation of a plan view of the cooling element of the exemplary embodiment
  • Figure 3 is a schematic representation of a perspective
  • an edge-emitting semiconductor laser chip 8 is attached to a first main surface 2 of a silicon submount (silicon substrate) 3, which represents the cooling element 3 here.
  • a beam axis 19 of a laser beam 7 emitted by the semiconductor laser chip 8 when the sensor is in operation runs essentially parallel to the first main surface 2 of the silicon submount 3.
  • the footbridge 29 has, at least in an area where the laser beam 7 strikes it, a side surface 15 designed as a mirror surface 17, which includes an angle ⁇ of essentially 45 ° with the first main surface 2 of the silicon submount 3 and from this is turned away, so that the laser ⁇ beam 7 is deflected 90 ° away from the silicon submount 3.
  • the mirror surface 17 is formed teil miclassig so that not all of the light emitted from the semiconductor laser chip 8 laser radiation 7, but only the first part is reflected 12 from the latter, and a second part 13 on the Spiegelflä ⁇ surface 17 to the silicon submount 3 is broken h .
  • a monitor photodiode 11 for monitoring the power of the laser radiation 7 emitted by the semiconductor laser chip 8 is integrated below the first support web 29 in the silicon submount 3. The latter receives at least a part of the second part of the laser radiation 7 broken at the mirror surface 17.
  • the construction and manufacture of such photodiodes 11 m of silicon wafers is known in semiconductor technology and is not explained in more detail here.
  • an insulation layer 31 preferably a silicon nitride layer, is applied, on which conductor tracks 33 and electrically conductive connection surfaces (bond pads) 20 - 28 for bond wires 34 and the semiconductor laser chip 8 are applied.
  • the conductor tracks 33 which preferably consist of metallization layers (eg Ti-Pt-Au), essentially connect the electrical connections of the electronic components formed or applied on the submount 3 to the connection areas 20-28.
  • connection surfaces 20 - 26 for bonding wires for external connection of the sensor module are located between the two support webs 29, 30 in the edge area of the silicon submount 3.
  • the three sensor photodiodes 4, 5, 6 are preferably embedded in a short-circuited photodiode 35.
  • a bond layer 32 consisting of amorphous silicon, is arranged between the support webs 29, 30 and the silicon submount 3. These bonding layers 32 serve as a “surface” for an anodic bonding of the support webs 29, 30 made of glass. This makes it possible to place electrically active components under the anodically bonded support webs. In this case, this is the monitor diode 11.
  • a lens arrangement consisting of a holographic optical element 9 and a refractive optical element 10.
  • This lens arrangement splits the laser radiation 12 deflected by 90 ° before it is applied to the magnetic storage medium 14 (e.g. a magnetic one) Disk) strikes several sub-beams.
  • the partial beams impinge on a reflection pattern arranged on the storage medium, e.g. em periodic line pattern, and are modulated according to the reflection pattern and reflected to the sensor photodiodes 4.5.6 hm.
  • the modulated signal thus obtained contains the information about the position of the read / write head above the storage medium 14.
  • the sensor module designed in accordance with the exemplary embodiment is preferably attached to a lead frame 36 ( Figure 4) by means of which it can be easily attached to an arm of a writing / reading head.
  • a surface-emitting laser (vertical cavity surface emission laser (VCSEL)) can also be used. Then the mirror surface 17 can be omitted, since this laser already emits the desired direction in the usual assembly.
  • VCSEL vertical cavity surface emission laser
  • the surface-emitting laser can also be designed such that it has not only one emitted light spot, but two, three or even more light spots in accordance with the desired number of partial beams. As a result, a more favorable energy distribution can be achieved in the partial beams and a technically simpler lens arrangement can be used.

Abstract

An optoelectronic sensor module (1) for recognising reflection models on a magnetic data carrier (14). A laser component (8), at least one first sensor-photodetector which is laterally offset in relation to the laser beam axis (19), electrically conductive contact surfaces (20-25) and electrically insulated printed conductors (33) are arranged on or in a silicon submount (3). A lens arrangement (9,10) is provided on the side of the laser emitter component (8) opposite the cooler element (3). Said lens arrangement is secured to the cooling element (3) by at least one supporting bar(29,30).

Description

Beschreibungdescription
Optoelektronisches SensormodulOptoelectronic sensor module
Die Erfindung bezieht sich auf ein optoelektronisches Sensormodul, insbesondere zur Verwendung m magnetischen Schreib- /Lese-Kopfen m magnetischen Aufnahme- und/oder Wiedergabe- Geraten.The invention relates to an optoelectronic sensor module, in particular for using m magnetic read / write heads, m magnetic recording and / or reproducing devices.
Aufgrund zunehmender Komplexität der erfugbaren Computerpro¬ gramme und der immer großer werdenden zu speichernden Datenmengen, ist es erforderlich, Speichermedien mit immer größerer Speicherkapazität zu entwickeln. Eine Möglichkeit, beispielsweise die Speicherkapazität der bekannten, auf einem magnetischen Speicherverfahren basierenden Floppydisk zu erhohen, besteht darin, die Spuren, auf denen die Informationen auf dem magnetischen Speichermedium der Floppydisk gespeichert sind, enger zusammenzufuhren.Due to the increasing complexity of erfugbaren Computerpro ¬ programs and the increasingly large amounts of data becoming to be stored, it is necessary to develop storage media with ever greater storage capacity. One possibility, for example to increase the storage capacity of the known floppy disk based on a magnetic storage method, is to bring the tracks on which the information is stored on the magnetic storage medium of the floppy disk closer together.
Bei derzeit erfugbaren Floppydisk-Laufwerken betragt bei mechanischer Fuhrung des magnetischen Schreιb-/Lese-Kopfes der Spurabstand auf dem Speichermedium etwa 100 μm. Eine deutliche Verringerung dieses Abstandes, z. B. um den Faktor 100 (dadurch wurde die Speicherkapazität des magnetischen Spei- chermediums um das lOOfache erhöht) , ist mit einer herkömmlich verwendeten magnetomechanischen Spurfuhrung nicht möglich. Eine entsprechend präzisere Spurfuhrung ist aber opto- mechanisch möglich und wird seit Jahren bei Co pakt-Disk (CD) - Laufwerken erfolgreich eingesetzt. Hierbei wird ein Laser- strahl auf die entsprechende Disk-Oberflache fokussiert und von dieser wieder auf einen geeigneten Detektor reflektiert. Entsprechend einem Strich- oder Punktmuster auf der Disk, das das Reflexionsverhalten der Disk entsprechend ändert, entsteht ein moduliertes elektrisches Signal am Detektor, das neben dem Datentransfer auch zur Spurerkennung und -fuhrung benutzt werden kann. Mit diesem Verfahren sind Spurabstande im μm-Bereich realisierbar. Halbleiterlaser-Bauelemente für die Verwendung m optischen Schreιb-/Lesekopfen von optischen Aufnahme- und Wiedergabe- Geraten sind beispielsweise aus der EP 199 565 bekannt. Bei den hierin beschriebenen Bauelementen sind jeweils zwei Foto¬ detektoren, ein Signaldetektor zur Aufnahme der von einer CD reflektierten optischen Signale und ein Monitordetektor zur Überwachung der Ausgangsleistung eines zugehörigen Halblei- terlaserchips, m einer Silizium-Platte integriert.With currently detectable floppy disk drives, the track spacing on the storage medium is approximately 100 μm with mechanical guidance of the magnetic write / read head. A significant reduction in this distance, e.g. B. by a factor of 100 (this increases the storage capacity of the magnetic storage medium by a factor of 100) is not possible with a conventionally used magnetomechanical tracking system. A correspondingly more precise tracking is opto-mechanically possible and has been used successfully for years with compact disk (CD) drives. Here, a laser beam is focused on the corresponding disk surface and is reflected by it on a suitable detector. According to a line or dot pattern on the disc, which changes the reflection behavior of the disc accordingly, a modulated electrical signal is generated at the detector, which can also be used for data detection and guidance in addition to data transfer. With this method, track spacing in the μm range can be achieved. Semiconductor laser components for the use m optical write / read heads of optical recording and playback devices are known for example from EP 199 565. In the herein described devices are two photo detectors ¬, a signal detector for receiving the light reflected from a CD optical signals and a monitor detector for monitoring the output power of an associated terlaserchips semiconductor, a silicon plate m integrated.
Die beiden Fotodetektoren sind m Abstrahlrichtung des Halb- leiterlaserchips gesehen, hintereinander angeordnet und liegen auf der Strahlachse des vom Halbleiterlaserchip abgestrahlten Laserstrahles. Über dem Signaldetektor ist ein teildurchlassiger U lenkspiegel angeordnet, der einen kleinen Teil der von dem Halbleiterlaserchip ausgesandten Strahlung zum Monitordetektor hm durchlaßt und den größeren Teil der Laserstrahlung durch Reflexion um 90° m Richtung von der Si- lizium-Platte weg umlenkt. Die reflektierte Laserstrahlung trifft auf die CD, wird dort entsprechend dem auf dieser angebrachten Reflexionsmuster wieder zum Halbleiterlaser- Bauelement hm zuruckreflektiert, tritt durch den teildurch- lassigen Umlenkspiegel hindurch und trifft auf den darunter angeordneten Signaldetektor auf.The two photodetectors are seen in the radiation direction of the semiconductor laser chip, are arranged one behind the other and lie on the beam axis of the laser beam emitted by the semiconductor laser chip. A partially transparent U steering mirror is arranged above the signal detector, which transmits a small part of the radiation emitted by the semiconductor laser chip to the monitor detector hm and deflects the larger part of the laser radiation away from the silicon plate by reflection by 90 °. The reflected laser radiation strikes the CD, is reflected back there to the semiconductor laser component hm in accordance with the reflection pattern attached to it, passes through the partially transparent deflection mirror and strikes the signal detector arranged below it.
Diese Anordnung hat jedoch die Nachteile, daß erstens eine am teildurchlassigen Umlenkspiegel gestreute Laserstrahlung vom Halbleiterlaserchip kommend direkt auf den Signaldetektor trifft und das vom optischen Datenspeicher reflektierte opti- sehe Signal stört und zweitens die Herstellung von teildurchlassigen Spiegeln mit hinreichenden Eigenschaften für diese Anwendung sehr schwierig ist.However, this arrangement has the disadvantages that firstly a laser radiation scattered on the partially transparent deflection mirror coming from the semiconductor laser chip hits the signal detector directly and interferes with the optical signal reflected by the optical data memory, and secondly the production of partially transparent mirrors with sufficient properties is very difficult for this application .
Ein bekannter Vorschlag, eine optomagnetische Spurfuhrung mit einem magnetischen Schreιb-/Lese-Kopf eines magnetischenA known proposal, an optomagnetic tracking with a magnetic write / read head of a magnetic
Speichergerats zu verbinden, besteht darin, die Laserquelle als diskretes Bauelement m Form eines Halbleiter-Laserchips in einem metallischen TO-Gehause (Durchmesser etwa 5 mm) zu¬ sammen mit den notwendigen diskreten Strahltormungs- und Strahlfuhrungs-Optiken und den zugehörigen Detektoren, die ebenfalls m diskreten metallischen TO-Gehausen montiert sind, nebeneinander auf dem mechanisch bewegten Tragerarm des magnetischen Schreιb-/Lese-Kopfes zu befestigen. Dieser Aufbau der Laserquelle mit den zugehörigen Detektoren und den optischen Komponenten auf dem Tragerarm des magnetischen Schreιb-/Lese-Kopfes vergrößert jedoch sowohl dessen Bauform als auch dessen Masse erheblich. Dies hat zwei entscheidende Nachteile zur Folge:To connect the storage device is to use the laser source as a discrete component in the form of a semiconductor laser chip in a metallic TO-housing (diameter about 5 mm) to ¬ together with the necessary discrete Strahltormungs- and Strahlfuhrungs optics and the associated detectors, which are also m discrete metallic TO-Gehausen are mounted side by side on the mechanically moved Trãgerarm the magnetic Schreιb - / read head to attach. This construction of the laser source with the associated detectors and the optical components on the support arm of the magnetic write / read head, however, significantly increases both its design and its mass. This has two major disadvantages:
Erstens wird durch die größere trage Masse des Armes, die höhere Beschleunigungskrafte zur Bewegung des Armes notwendig macht, dessen Beweglichkeit beschrankt und damit die Zu- griffszeit auf die Daten-Spuren des magnetischen Speichermediums und foglich die Datenzugriffszeit erhöht. Zweitens vergrößern die TO-Komponenten des Halbleiter- Laserchips und der Detektoren die Abmessungen des Gesamtaufbaus des entsprechenden Speicher-Laufwerks derart, daß die Standard-Gehausehohe von 1 Zoll nicht mehr erreicht werden kann. Ein entsprechend dieser Technik aufgebautes opto- magnetisches Floppydisk-Laufwerk kann daher die bisher verwendeten magnetischen Floppydisk-Laufwerke nicht unmittelbar ersetzen, da es m die standardmäßigen Einbauschachte von Personal-Computern und noch weniger von Laptops nicht eingebaut werden kann.First, the greater inertial mass of the arm, which necessitates higher acceleration forces to move the arm, limits its mobility and thus increases the access time to the data tracks of the magnetic storage medium and, consequently, the data access time. Secondly, the TO components of the semiconductor laser chip and the detectors enlarge the dimensions of the overall construction of the corresponding storage drive in such a way that the standard housing height of 1 inch can no longer be achieved. An opto-magnetic floppy disk drive constructed in accordance with this technology can therefore not immediately replace the magnetic floppy disk drives previously used, since it cannot be installed in the standard installation bays of personal computers and even less of laptops.
Ein optisches Sensormodul ist beispielsweise aus der US 4,958,245 bekannt. Dieses dient zur Bestimmung der Position eines Tragerkopfes gegenüber einem magnetischen Datenträger und weist m Form von diskreten Bauelementen eine Infrarot- Sendediode, eine Sammellinse, einen Umlenkspiegel und einen Photodetektor auf, die m einem separates Gehäuse angeordnet sind. Der Platzbedarf und die Masse dieses Senormoduls ist ebenfalls verhältnismäßig groß. Der vorliegenden Erfindung liegt die Aufgabe zugrunde, ein optoelektronisches Sensormodul zu entwickeln, das eine gerin¬ ge Masse, einen geringen Platzbedarf und eine verringerte Störanfälligkeit aufgrund gestreuter Laserstrahlung aufweist. Weiterhin soll ein technisch einfaches Herstellungsverfahren für ein derartiges optoelektronisches Sensormodul angegeben werden, das eine wirtschaftliche Massenproduktion ermöglicht. Das Sensormodul soll mit herkömmlichen Bestuckungsanlagen montierbar sein.An optical sensor module is known for example from US 4,958,245. This serves to determine the position of a carrier head relative to a magnetic data carrier and has an infrared transmitter diode, a converging lens, a deflecting mirror and a photodetector in the form of discrete components, which are arranged in a separate housing. The space requirement and the mass of this sensor module is also relatively large. The present invention is based on the object to develop an optoelectronic sensor module having a clotting ¬ ge mass, a small footprint and a reduced susceptibility to failure due to scattered laser radiation. Furthermore, a technically simple manufacturing method for such an optoelectronic sensor module is to be specified, which enables economical mass production. The sensor module should be mountable with conventional assembly systems.
Diese Aufgabe wird durch ein optoelektronisches Sensormodul mit den Merkmalen des Patentanspruches 1 gelost. Vorteilhafte Weiterbildungen des optoelektronischen Sensormoduls sind Gegenstand der Unteranspruche 2 bis 7.This object is achieved by an optoelectronic sensor module with the features of claim 1. Advantageous developments of the optoelectronic sensor module are the subject of subclaims 2 to 7.
Erfmdungsgemaß ist ein optoelektronisches Sensormodul zur Erkennung von Reflexionsmustern auf einem magnetischen Daten- trager vorgesehen, bei dem auf einer ersten Hauptflache eines Kuhlelements ein Laser-Emitterbauelement mit einer Laser- Abstrahlachse befestigt ist. In dem Kuhlelement ist seitlich versetzt zur Laser-Abstrahlachse neben dem Laser- Emitterbauelement mindestens ein erster Sensor-Photodetektor zum Auslesen der Spurdaten ausgebildet. An der ersten Hauptflache des Kuhlelements sind elektrisch leitende An- schlußflachen (Bondpads) ausgebildet oder aufgebracht, die mittels an der ersten Hauptflache ausgebildeten oder aufgebrachten voneinander elektrisch isolierten elektrischen Leiterbahnen mit elektrischen Anschlüssen des Laser- Emitterbauelements bzw. des Sensor-Photodetektors verbunden sind. An der dem Kuhlelement gegenüberliegenden Seite des Laser-Emitterbauelements ist eine Linsenanordnung vorgesehen, die mittels wenigsten eines Stutzsteges auf dem Kuhlelement befestigt ist. Das Laser-Emitterbauelement ist derart angeordnet, daß im Betrieb wenigstens ein erster Teil einer von diesem ausgesandten Laserstrahlung direkt oder nach einer Um- lenkung mit einem Reflexionselement durch die Linsenanordnung hindurch aus dem Sensormodul ausgekoppelt wird. Die ausgekop- pelte Laserstrahlung wird wenigstens zum Teil von den Refle¬ xionsmustern auf dem außerhalb des Sensormoduls angeordneten magnetischen Datenträger zum Sensor-Photodetektor hm modu¬ liert zuruckreflektiert und von diesem empfangen.According to the invention, an optoelectronic sensor module for detecting reflection patterns on a magnetic data carrier is provided, in which a laser emitter component with a laser radiation axis is attached to a first main surface of a cooling element. At least one first sensor photodetector for reading out the track data is formed in the cooling element, laterally offset from the laser emission axis, in addition to the laser emitter component. Electrically conductive connection pads (bond pads) are formed or applied to the first main surface of the cooling element and are connected to electrical connections of the laser emitter component or the sensor photodetector by means of electrical interconnects which are formed or applied to one another on the first main surface. A lens arrangement is provided on the side of the laser emitter component opposite the cooling element, which is attached to the cooling element by means of at least one support web. The laser emitter component is arranged in such a way that, during operation, at least a first part of a laser radiation emitted by it is coupled out of the sensor module through the lens arrangement directly or after deflection with a reflection element. The decoupled pelte laser radiation is at least in part on the Refle ¬ xionsmustern on the arranged outside of the sensor module to the sensor magnetic disk photodetector hm modu ¬ lines zuruckreflektiert and received from.
Das erf dungsgemaße optoelektronische Sensormodul lost die weiter oben beschriebenen Probleme der zu großen Masse und der zu großen Bauhohe dadurch, daß der Sensor-Fotodetektor, das Laser-Emitterbauelement, die Leiterbahnen für diese elek- tronischen Bauelemente, die Anschlußflachen (Bondpads) und der Stutzsteg für die Linsenanordnung auf einem einzigen Kuhlelement integriert ausgebildet (Sensor-Photodetektor) bzw. angeordnet und somit auf engstem Raum vereinigt sind.The invented optoelectronic sensor module solves the above-described problems of too great a mass and too great a height by the fact that the sensor photodetector, the laser emitter component, the conductor tracks for these electronic components, the connection surfaces (bond pads) and the support web for the lens arrangement integrated on a single cooling element (sensor-photodetector) or arranged and thus combined in a confined space.
Störende Laserstreustrahlung wird dadurch verringert, daß der Sensor-Photodetektor nicht auf der Abstrahlachse des Laser- Emitterbauelements liegt, sondern neben dieser positioniertInterfering laser scatter radiation is reduced in that the sensor photodetector is not on the radiation axis of the laser emitter component, but is positioned next to it
Bei einer besonders bevorzugten Weiterbildung des optoelektronischen Sensorbauelments ist das Kuhlelement eine im Wesentlichen Silizium aufweisende Tragerplatte, der die Sen- sorphotodiode integriert ausgebildet ist. Auf der Tragerplatte ist eine Isolationsschicht aufgebracht, auf der die An- schlußflachen (Bondpads) sowie die elektrischen Leiterbahnen aufgebracht sind.In a particularly preferred development of the optoelectronic sensor component, the cooling element is a carrier plate which essentially has silicon and which has an integrated sensor photodiode. An insulation layer is applied to the carrier plate, on which the connection areas (bond pads) and the electrical conductor tracks are applied.
Silizium ist ein sehr guter Wärmeleiter und von daher als Material für das Kuhlelement besonders geeignet. Vorteilhafter- weise lassen sich m Silizium auf einfache Weise Photodetektoren, wie Photodioden und Phototransistoren, herstellen. Die zugehörige Technologie an sich ist bekannt und wird von daher an dieser Stelle nicht naher erläutert.Silicon is a very good heat conductor and is therefore particularly suitable as a material for the cooling element. Photodetectors, such as photodiodes and phototransistors, can advantageously be produced in silicon in a simple manner. The associated technology itself is known and is therefore not explained in more detail here.
Bei einer besonders bevorzugten Ausfuhrungsform des zuletzt beschriebenen optoelektronischen Sensorbauelments ist das Laser-Emitterbauelement zwischen einem ersten und einem zweiten Stutzsteg angeordnet, die im Wesentlichen aus Glas bestehen. Zwischen den Stutzstegen und der Siliziu platte ist jeweils eine Bond-Schicht, im Wesentlichen bestehend aus amorphem Si¬ lizium, angeordnet und die beiden Stutzstege sind mittels an- odischem Bonden auf der entsprechenden Bond-Schicht befestigt. Diese Bauweise ermöglicht vorteilhafterweise eine rationelle Massenfertigung des optoelektronischen Sensormoduls,In a particularly preferred embodiment of the optoelectronic sensor component described last, the laser emitter component is between a first and a second Support bridge arranged, which consist essentially of glass. Plate between the stub and the ridges Siliziu each is a bonding layer consisting essentially of amorphous Si ¬ lizium, disposed neck and the two webs are fastened by means of bonding layer Toggle odischem bonding on the corresponding. This design advantageously enables rational mass production of the optoelectronic sensor module,
Weitere Vorteile und vorteilhafte Weiterbildungen des erfin- dungsgemaßen optoelektronischen Sensors ergeben sich aus dem im folgenden beschriebenen Ausfuhrungsbeispiel m Verbindung mit den Figuren 1 bis 4. Es zeigen:Further advantages and advantageous developments of the optoelectronic sensor according to the invention result from the exemplary embodiment described below in connection with FIGS. 1 to 4. The figures show:
Figur 1 eine schematische Darstellung eines Schnittes durch das Ausfuhrungsbeispiel, Figur 2 eine schematische Darstellung einer Draufsicht auf das Kuhlelement des Ausfuhrungsbeispieles,1 shows a schematic representation of a section through the exemplary embodiment, FIG. 2 shows a schematic representation of a plan view of the cooling element of the exemplary embodiment,
Figur 3 eine schematische Darstellung einer perspektivischenFigure 3 is a schematic representation of a perspective
Ansicht des m seine Einzelteile zerlegten Ausfuhrungsbeispieles und Fifur 4 eine schematische Darstellung einer perspektivischenView of the disassembled exemplary embodiment and Fifur 4 a schematic representation of a perspective view
Ansicht des Ausfuhrungsbeispieles, montiert auf ein Leadfra- me .View of the exemplary embodiment, mounted on a lead frame.
Bei dem m der Figur 1 im Schnitt dargestellten Ausfuhrungs- beispiel ist auf einer ersten Hauptflache 2 eines Silizium- Submounts (Silizium-Substrat) 3, das hier das Kuhlelement 3 darstellt, ein kantenemittierender Halbleiterlaserchip 8 befestigt. Eine Strahlachse 19 eines von dem Halbleiterlaserchip 8 im Betrieb des Sensors ausgesandten Laserstrahls 7 verlauft im Wesentlichen parallel zur ersten Hauptflache 2 des Siliziu -Submounts 3. Auf einander gegenüberliegenden Seiten des Halbleiterlaserchips 8 sind ein erster 29 und ein zweiter Stutzsteg 30, beispielsweise m Form von Glasstreifen, auf dem Silizium-Submount 3 befestigt, wobei die Strahlachse 19 im Wesentlichen senkrecht zur Langserstrek- kungsπchtung der Stutzstege 29,30 steht, zumindest aber einen 29 der beiden Stutzstege 29,30 schneidet. Der Stutzsteg 29 weist zumindest m einem Bereich, m dem der Laserstrahl 7 auf ihn auftrifft, eine als Spiegelfläche 17 ausgebildete Seitenfläche 15 auf, die mit der ersten Haupflache 2 des Si- lizium-Submounts 3 einen Winkel α von im wesentlichen 45° einschließt und von dieser abgewandt ist, so daß der Laser¬ strahl 7 um 90° vom Silizium-Submount 3 weg umgelenkt wird. Die Spiegelfläche 17 ist teildurchlassig ausgebildet, so daß nicht die gesamte von dem Halbleiterlaserchip 8 ausgesandte Laserstrahlung 7, sondern nur ein erster Teil 12 von dieser reflektiert wird, und ein zweiter Teil 13 an der Spiegelflä¬ che 17 zum Silizium-Submount 3 h gebrochen wird.In the exemplary embodiment shown in section in FIG. 1, an edge-emitting semiconductor laser chip 8 is attached to a first main surface 2 of a silicon submount (silicon substrate) 3, which represents the cooling element 3 here. A beam axis 19 of a laser beam 7 emitted by the semiconductor laser chip 8 when the sensor is in operation runs essentially parallel to the first main surface 2 of the silicon submount 3. On opposite sides of the semiconductor laser chip 8 there are a first 29 and a second support web 30, for example in the form of Glass strip, fastened on the silicon submount 3, the beam axis 19 being essentially perpendicular to the longitudinal extension of the support webs 29,30, but at least intersecting one 29 of the two support webs 29,30. The footbridge 29 has, at least in an area where the laser beam 7 strikes it, a side surface 15 designed as a mirror surface 17, which includes an angle α of essentially 45 ° with the first main surface 2 of the silicon submount 3 and from this is turned away, so that the laser ¬ beam 7 is deflected 90 ° away from the silicon submount 3. The mirror surface 17 is formed teildurchlassig so that not all of the light emitted from the semiconductor laser chip 8 laser radiation 7, but only the first part is reflected 12 from the latter, and a second part 13 on the Spiegelflä ¬ surface 17 to the silicon submount 3 is broken h .
Unterhalb des ersten Stutzsteges 29 ist im Silizium-Submount 3 eine Monitor-Photodiode 11 zur Überwachung der Leistung der von dem Halbleiterlaserchip 8 ausgesandten Laserstrahlung 7 integriert ausgebildet. Diese empfangt zumindest einen Teil des an der Spiegelflache 17 gebrochenen zweiten Teiles der Laserstrahlung 7. Der Aufbau und die Herstellung von derartigen Photodioden 11 m Siliziumscheiben ist m der Halbleiter- technik bekannt und wird von an dieser Stelle nicht naher erläutert .A monitor photodiode 11 for monitoring the power of the laser radiation 7 emitted by the semiconductor laser chip 8 is integrated below the first support web 29 in the silicon submount 3. The latter receives at least a part of the second part of the laser radiation 7 broken at the mirror surface 17. The construction and manufacture of such photodiodes 11 m of silicon wafers is known in semiconductor technology and is not explained in more detail here.
Nahezu auf der gesamten ersten Hauptflache 2 des Silizium- Submounts 3 ist eine Isolationsschicht 31, bevorzugt eine Si- liziumnitridschicht, aufgebracht, auf der zwischen den beiden Stutzstegen 29, 30 Leiterbahnen 33 und elektrisch leitende Anschlußflachen (Bondpads) 20 - 28 für Bonddrahte 34 und den Halbleiterlaserchip 8 aufgebracht sind. Die Leiterbahnen 33, die bevorzugt aus Metallisierungsschichten (z. b. Ti-Pt-Au) bestehen, verbinden im Wesentlichen die elektrischen Anschlüsse der auf dem Submount 3 ausgebildeten bzw. aufgebrachten elektronischen Bauelemente mit den Anschlußflachen 20 - 28.Almost on the entire first main surface 2 of the silicon submount 3, an insulation layer 31, preferably a silicon nitride layer, is applied, on which conductor tracks 33 and electrically conductive connection surfaces (bond pads) 20 - 28 for bond wires 34 and the semiconductor laser chip 8 are applied. The conductor tracks 33, which preferably consist of metallization layers (eg Ti-Pt-Au), essentially connect the electrical connections of the electronic components formed or applied on the submount 3 to the connection areas 20-28.
Seitlich neben dem Halbleiterlaserchip 8, ebenfalls zwischen den beiden Stutzstegen 29,30, sind drei nebeneinander ange- orndete, bevorzugt zueinander parallel verlaufende langge- streckte Sensor-Photodioden 4,5,6 m den Silizium-Submount 3 integriert, deren elektrische Anschlüsse mittels Leiterbahnen 33 mit den Anschlußflachen 20 - 23 elektrisch leitend verbunden sind. Die Langserstreckungsπchtung der Sensor- Photodioden 4,5,6 verlauft parallel zur Strahlachse 19 der ausgesandten Laserstrahlung 19.On the side next to the semiconductor laser chip 8, also between the two support webs 29, 30, there are three elongated, preferably parallel to one another, stretched sensor photodiodes 4.5.6 m integrated into the silicon submount 3, the electrical connections of which are connected in an electrically conductive manner by means of conductor tracks 33 to the connection surfaces 20-23. The longitudinal extension of the sensor photodiodes 4, 5, 6 runs parallel to the beam axis 19 of the emitted laser radiation 19.
Samtliche Anschlußflachen 20 - 26 für Bonddrahte zum externen Anschließen des Sensormoduls liegen zwischen den beiden Stutzstegen 29,30 im Randbereich des Silizium-Submounts 3.All the connection surfaces 20 - 26 for bonding wires for external connection of the sensor module are located between the two support webs 29, 30 in the edge area of the silicon submount 3.
Die drei Sensor-Photodioden 4,5,6 sind bevorzugt m eine kurzgeschlossene Photodiode 35 eingebettet.The three sensor photodiodes 4, 5, 6 are preferably embedded in a short-circuited photodiode 35.
Zwischen den Stutzstegen 29,30 und dem Silizium-Submount 3 ist jeweils eine Bondschicht 32, bestehend aus amorphem Silizium, angeordnet. Diese Bondschichten 32 dienen als „Oberflache" für em anodisches Bonden der aus Glas bestehenden Stutzstege 29,30. Hierdurch ist es möglich, unter den an- odisch gebondeten Stutzstegen elektrisch aktive Bauelemente zu plazieren. In diesem Fall ist dies die Monitordiode 11.A bond layer 32, consisting of amorphous silicon, is arranged between the support webs 29, 30 and the silicon submount 3. These bonding layers 32 serve as a “surface” for an anodic bonding of the support webs 29, 30 made of glass. This makes it possible to place electrically active components under the anodically bonded support webs. In this case, this is the monitor diode 11.
Auf den Stutzstegen 29,30 befindet sich eine Linsenanordnung, bestehend aus einem holographischen optischen Element 9 und einem refractiven optischen Element 10. Diese Linsenanordnung splittet die um 90° umgelenkte Laserstrahlung 12, bevor sie auf das magnetische Speichermedium 14 (z. B. eine magnetische Disk) trifft m mehrere Teilstrahlen auf. Die Teilstrahlen treffen auf e auf dem Speichermedium angeordnetes Refle- xionsmuster, z.B. em periodisches Strichmuster, und werden von diesem entsprechend dem Reflexionsmuster moduliert zu den Sensor-Photodioden 4,5,6 hm reflektiert. Das somit erhaltene modulierte Signal enthalt die Information über die Position des Lese-/Schreιbkopfes über dem Speichermedium 14.On the support webs 29, 30 there is a lens arrangement consisting of a holographic optical element 9 and a refractive optical element 10. This lens arrangement splits the laser radiation 12 deflected by 90 ° before it is applied to the magnetic storage medium 14 (e.g. a magnetic one) Disk) strikes several sub-beams. The partial beams impinge on a reflection pattern arranged on the storage medium, e.g. em periodic line pattern, and are modulated according to the reflection pattern and reflected to the sensor photodiodes 4.5.6 hm. The modulated signal thus obtained contains the information about the position of the read / write head above the storage medium 14.
Das entsprechend dem Ausfuhrungsbeispiel ausgebildete Sensormodul ist vorzugsweise auf einem Leadfra e 36 befestigt (Figur 4) mittels dem es auf einfache Weise an einem Arm eines Schreιb-/Lesekopf befestigbar ist.The sensor module designed in accordance with the exemplary embodiment is preferably attached to a lead frame 36 (Figure 4) by means of which it can be easily attached to an arm of a writing / reading head.
An Stelle des kantenemittierenden Halbleiterlaserchips 8 kann auch em oberflachenemittierender Laser (Vertical Cavity Sur- face Emittmg Laser (VCSEL) ) verwendet sein. Dann kann die Spiegelfläche 17 entfallen, da dieser Laser bei üblicher Montage bereits m die gewünschte Richtung abstrahlt.Instead of the edge-emitting semiconductor laser chip 8, a surface-emitting laser (vertical cavity surface emission laser (VCSEL)) can also be used. Then the mirror surface 17 can be omitted, since this laser already emits the desired direction in the usual assembly.
Der oberflachenemittierende Laser kann auch so gestaltet sein, daß er nicht nur einen emittierten Leuchtfleck, sondern entsprechend der gewünschten Zahl von Teilstrahlen zwei, drei oder noch mehr Leuchtflecke aufweist. Dadurch kann eine gunstigere Energieverteilung m den Teilstrahlen erreicht und eine technisch einfachere Linsenanordnung verwendet werden. The surface-emitting laser can also be designed such that it has not only one emitted light spot, but two, three or even more light spots in accordance with the desired number of partial beams. As a result, a more favorable energy distribution can be achieved in the partial beams and a technically simpler lens arrangement can be used.

Claims

Patentansprüche claims
1. Optoelektronisches Sensormodul (1) zur Erkennung von Re¬ flexionsmustern auf einem magnetischen Datenträger (14), bei dem auf einer ersten Hauptflache (2) eines Kuhlelements (3) em Laser-Emitterbauelement (8) mit einer Laser-Abstrahlachse (19) befestigt ist, m dem Kuhlelement (3) seitlich versetzt zur Laser- Abstrahlachse (19) neben dem Laser-Emitterbauelement (8) min¬ destens em erster Sensor-Photodetektor (4,5,6) ausgebildet(1) ¬ flexionsmustern 1. Optoelectronic sensor module for the detection of Re on a magnetic data carrier (14), in which on a first main surface (2) of a cooling element (3) em laser emitting device (8) with a laser irradiation axis (19) is attached, m the cooling element (3) laterally offset from the laser irradiation axis (19) adjacent the laser-emitting device (8) min ¬ least em first sensor photodetector (4,5,6) formed
an der ersten Hauptflache (2) des Kuhlelements (3) elektrisch leitende Anschlußflachen (Bondpads) (20 - 25) ausgebildet oder aufgebracht sind, die mittels an der ersten Hauptflache (2) ausgebildeten oder aufgebrachten voneinander elektrisch isolierten elektrischen Leiterbahnen (33) mit elektrischen Anschlüssen des Laser-Emitterbauelements (3) bzw. des Sensor- Photodetektors (4,5,6) verbunden sind, an der dem Kuhlelement (3) gegenüberliegenden Seite des Laser-Emitterbauelements (8) eine Linsenanordnung (9,10) vorgesehen ist, die mittels wenigstens einem Stutzsteg (29,30) auf dem Kuhlelement (3) befestigt ist, und bei dem das Laser-Emitterbauelement (8) derart angeordnet ist, daß im Betrieb wenigstens em erster Teil (12) einer von dem Laser-Emitterbauelement (8) ausgesandten Laserstrahlung (7) direkt oder nach einer Umlenkung mit einem Reflexionsele- ment (17) durch die Linsenanordnung (9,10) hindurch aus dem Sensormodul (1) ausgekoppelt und von den Reflexionsmustern auf dem außerhalb des Sensormoduls (1) angeordneten magnetischen Datenträger (14) zumindest teilweise zum Sensor- Photodetektor (4,5,6) hm zuruckreflektiert und von diesem empfangen wird.on the first main surface (2) of the cooling element (3), electrically conductive connection surfaces (bond pads) (20-25) are formed or applied, which are electrically insulated from each other by means of electrical conductor tracks (33) formed or applied to the first main surface (2) Connections of the laser emitter component (3) or the sensor photodetector (4,5,6) are connected, on the side of the laser emitter component (8) opposite the cooling element (3) a lens arrangement (9, 10) is provided, which is attached to the cooling element (3) by means of at least one support web (29, 30), and in which the laser emitter component (8) is arranged such that at least one first part (12) of the laser emitter component (12) 8) emitted laser radiation (7) directly or after a deflection with a reflection element (17) through the lens arrangement (9, 10) from the sensor module (1) and from the reflection patterns on the outside lb of the sensor module (1) arranged magnetic data carrier (14) at least partially reflected back to the sensor photodetector (4,5,6) hm and received by the latter.
2. Optoelektronisches Sensormodul nach Anspruch 1, bei dem das Kuhlelement (3) eine Siliziumplatte ist, m der der Sensor-Photodetektor (4,5,6) integriert ausgebildet ist, und bei dem zwischen der Siliziumplatte und den Anschlußflachen (Bondpads) (20 - 25) sowie zwischen der Siliziumplatte und den elektrischen Leiterbahnen (33) eine Isolationsschicht (31) aufgebracht ist.2. Optoelectronic sensor module according to claim 1, wherein the cooling element (3) is a silicon plate, m the sensor-photodetector (4,5,6) is integrated, and at an insulation layer (31) is applied between the silicon plate and the connection surfaces (bond pads) (20-25) and between the silicon plate and the electrical conductor tracks (33).
3. Optoelektroniches Sensormodul nach Anspruch 2, bei dem das Laser-Emitterbauelement (8) zwischen einem ersten (29) und einem zweiten Stutzsteg (30), im Wesentlichen bestehend aus Glas, angeordnet ist, zwischen den Stutzstegen (29,30) und der Siliziumplatte jeweils eine Bond-Schicht (32), im Wesentlichen bestehend aus amorphem Silizium, angeordnet ist und bei dem die beiden Stutzstege (29,30) mittels anodischem Bonden auf der Bond-Schicht (32) befestigt sind.3. Optoelectronic sensor module according to claim 2, wherein the laser emitter component (8) is arranged between a first (29) and a second support web (30), consisting essentially of glass, between the support webs (29, 30) and the Silicon plate each has a bond layer (32), consisting essentially of amorphous silicon, and in which the two support webs (29, 30) are attached to the bond layer (32) by means of anodic bonding.
4. Optoelektronisches Sensormodul nach einem der Ansprüche 1 bis 3, bei dem im Kuhlelement (3) ein Monitor-Photodetektor4. Optoelectronic sensor module according to one of claims 1 to 3, in which in the cooling element (3) a monitor photodetector
(11) ausgebildet ist, m den wenigstens em zweiter Teil (13) der von dem Laser-Emitterbauelement (8) ausgesandten Laser- Strahlung (7) eingekoppelt wird.(11) is formed, the at least em second part (13) of the laser radiation (7) emitted by the laser emitter component (8) is coupled in.
5. Optoelektronisches Sensormodul nach einem der Ansprüche 1 das Laser-Emitterbauelement (8) em Kantenemitter ist, dessen Laser-Abstrahlachse (19) im Wesentlichen parallel zur ersten Hauptflache (2) des Kuhlelements (3) verlauft, und dem Laser-Emitterbauelement (8) m dessen Abstrahlrichtung gesehen, eine dem Laser-Emitterbauelement (8) zugewandte und von der ersten Hauptflache (2) abgewandte, die Abstrahlachse (19) mit einem Winkel von etwa 45° schneidene Spiegelfläche (17) nachgeordnet ist, die im Betrieb den ersten Teil (12) der Laserstrahlung (7) m eine im Wesentlichen senkrecht zur ersten Hauptflache (2) stehenden Richtung umlenkt.5. Optoelectronic sensor module according to one of claims 1 the laser emitter component (8) is an edge emitter, the laser radiation axis (19) of which runs essentially parallel to the first main surface (2) of the cooling element (3), and the laser emitter component (8) is seen by the laser in its radiation direction -Emitter component (8) facing and facing away from the first main surface (2), followed by the radiation axis (19) with an angle of approximately 45 ° intersecting mirror surface (17), which during operation is the first part (12) of the laser radiation (7) m deflects a direction that is essentially perpendicular to the first main surface (2).
6. Optoelektronisches Sensormodul nach Anspruch 3 und 5 oder nach Anspruch 3, 4 und 5, bei dem die Abstrahlrichtung des Laser-Emitterbauelements (8) auf den ersten Stützsteg (29) gerichtet ist, und derjenige Teil einer dem Laser-Emitterbauelement (8) zugewandten Seitenfläche (15) des ersten Stützsteges (29), auf welchen die Laserstrahlung (7) auftrifft, gegenüber der Abstrahlachse (15) mit einem Winkel von etwa 45° abgeschrägt ist und die Spiegelfläche (17) darstellt.6. Optoelectronic sensor module according to claim 3 and 5 or according to claim 3, 4 and 5, wherein the radiation direction of the Laser emitter component (8) is directed onto the first support web (29), and that part of a side surface (15) of the first support web (29) facing the laser emitter component (8) on which the laser radiation (7) impinges is opposite Beam axis (15) is chamfered at an angle of approximately 45 ° and represents the mirror surface (17).
7. Optoelektronisches Sensormodul nach Anspruch 6, bei dem die Spiegelfläche (17) teildurchlässig ist und bei dem der7. Optoelectronic sensor module according to claim 6, in which the mirror surface (17) is partially transparent and in which the
Monitor-Photodetektor (11) unterhalb des zweiten Stützsteges und unterhalb der Laser-Abstrahlachse (19) derart angeordnet ist, daß der erste Teil (12) der Laserstrahlung (7) von der Spiegelfläche (17) zu der Linsenanordnung (9,10) hin reflek- tiert und der zweite Teil (13) der Laserstrahlung (7) an der Spiegelfläche (17) zum Monitor-Photodetektor (11) hin gebrochen wird. Monitor photodetector (11) is arranged below the second support web and below the laser radiation axis (19) such that the first part (12) of the laser radiation (7) from the mirror surface (17) to the lens arrangement (9, 10) reflected and the second part (13) of the laser radiation (7) on the mirror surface (17) towards the monitor photodetector (11) is refracted.
EP98961060A 1997-10-31 1998-10-30 Optoelectronic sensor module Withdrawn EP0950241A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19748324A DE19748324C2 (en) 1997-10-31 1997-10-31 Optoelectronic sensor module
DE19748324 1997-10-31
PCT/DE1998/003186 WO1999023645A1 (en) 1997-10-31 1998-10-30 Optoelectronic sensor module

Publications (1)

Publication Number Publication Date
EP0950241A1 true EP0950241A1 (en) 1999-10-20

Family

ID=7847320

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98961060A Withdrawn EP0950241A1 (en) 1997-10-31 1998-10-30 Optoelectronic sensor module

Country Status (7)

Country Link
US (1) US6137102A (en)
EP (1) EP0950241A1 (en)
JP (1) JP2001507850A (en)
KR (1) KR100408329B1 (en)
DE (1) DE19748324C2 (en)
TW (1) TW380251B (en)
WO (1) WO1999023645A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3667251B2 (en) 2000-05-30 2005-07-06 キヤノン・コンポーネンツ株式会社 Image sensor, image processing apparatus using the same, and information processing system
US7515200B2 (en) 2001-08-10 2009-04-07 Canon Kabushiki Kaisha Image sensing apparatus, focus adjustment method, and focus adjustment computer control program
KR100826434B1 (en) * 2002-06-04 2008-04-29 삼성전기주식회사 Submount for loading optical device
DE10253907A1 (en) 2002-09-20 2004-04-01 Osram Opto Semiconductors Gmbh Optical scanning head for reading optical data memory has optical element joined to substrate via supporting element(s) to guide deflected laser beam to data memory, reflected beam to signal detector
KR20040079555A (en) * 2003-03-07 2004-09-16 삼성전자주식회사 Optical head and optical path adjusting method of the same
KR100513734B1 (en) * 2003-11-04 2005-09-08 삼성전자주식회사 Slim optical pickup
JP4462606B2 (en) * 2004-01-27 2010-05-12 セイコーインスツル株式会社 Clock with display correction mechanism
TWI296154B (en) 2004-01-27 2008-04-21 Casio Computer Co Ltd Optical sensor module
FR2871583A1 (en) * 2004-06-14 2005-12-16 Commissariat Energie Atomique DEVICE FOR COLLECTING A PART OF A LUMINOUS BEAM FROM AN ELECTRONIC LIGHT EMITTING COMPONENT

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6182388A (en) * 1984-09-29 1986-04-25 Nec Home Electronics Ltd Vertical magnetic recording reproducing device
CA1258906A (en) * 1985-04-22 1989-08-29 Hiroshi Oinoue Semiconductor laser apparatus for optical head
JP2590912B2 (en) * 1987-08-13 1997-03-19 ソニー株式会社 Optical pickup device
US4958245A (en) * 1988-04-07 1990-09-18 Insite Peripherals, Inc. Apparatus and method for optical servo control with media having information storage and servo control regions of different reflectivities
US5350917A (en) * 1991-12-27 1994-09-27 Sony Corporation Opto-magnetic recording polarization optical apparatus including a laser diode and a light absorbing film
EP0577197B1 (en) * 1992-07-01 1997-10-22 Koninklijke Philips Electronics N.V. Optoelectronic device and method of manufacturing same
JP3163605B2 (en) * 1992-07-21 2001-05-08 ソニー株式会社 Optical pickup
JPH06162699A (en) * 1992-11-20 1994-06-10 Matsushita Electric Ind Co Ltd Magnetic recorder
JPH087321A (en) * 1994-06-21 1996-01-12 Sony Corp Light detecting/light emitting element
EP0740294A1 (en) * 1995-04-26 1996-10-30 Matsushita Electric Industrial Co., Ltd. Optical head
DE69630172T2 (en) * 1995-07-10 2004-06-17 Matsushita Electric Industrial Co., Ltd., Kadoma Information recording medium and device for detecting a track search signal and magnetic recording device and method for setting a magnetic recording device
WO1997039448A1 (en) * 1996-04-18 1997-10-23 Matsushita Electric Industrial Co., Ltd. Optical pickup

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9923645A1 *

Also Published As

Publication number Publication date
KR20000069725A (en) 2000-11-25
KR100408329B1 (en) 2003-12-06
TW380251B (en) 2000-01-21
US6137102A (en) 2000-10-24
WO1999023645A1 (en) 1999-05-14
JP2001507850A (en) 2001-06-12
DE19748324A1 (en) 1999-05-20
DE19748324C2 (en) 1999-08-26

Similar Documents

Publication Publication Date Title
DE3546796C2 (en)
US5136152A (en) Hybrid optical pickup with integrated power emission and reading photodetectors
DE69838968T2 (en) Optical pickup and optical disk scanner
US6084848A (en) Two-dimensional near field optical memory head
DE3627441C2 (en)
DE60116438T2 (en) Semiconductor laser device and optical scanning device using the same
DE69920653T2 (en) SEMICONDUCTOR LASER DEVICE
DE69839291T2 (en) A method of coating a phase change recording medium for tracking according to the differential phase detection method
DE60025892T2 (en) Optical scanning device with improved optical properties, and manufacturing method of the optical scanning device
EP0950241A1 (en) Optoelectronic sensor module
DE69814345T2 (en) Optical reading head with catadioptric objective lens
DE60118117T2 (en) Optical scanning device and optical scanning method
US7423953B2 (en) Optical module and optical recording and/or reproducing apparatus
CN1073258C (en) Device for optically scanning a surface
DE69937848T2 (en) Information recording medium and information reproducing apparatus
DE10253907A1 (en) Optical scanning head for reading optical data memory has optical element joined to substrate via supporting element(s) to guide deflected laser beam to data memory, reflected beam to signal detector
DE19850110A1 (en) Optical system for an optical disk drive
EP1540649B1 (en) Optical scanning head and method for producing the same
DE4330794C2 (en) Optical head device for use in an optical recording and writing / reading device
US6757221B1 (en) Optical head having object lens and patterned coil
JPS58188343A (en) Information memory device
JPS59193558A (en) Optical card
US6678298B2 (en) Semiconductor laser chip and optical pickup using the same
JPS62245530A (en) Ultrahigh density recording system utilizing fine beam
DE60224897T2 (en) Multi-faceted reflection prism and optical scanning head

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19990618

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: INFINEON TECHNOLOGIES AG

17Q First examination report despatched

Effective date: 20041007

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20050218