EP0944810A4 - Improved method and apparatus for measuring the concentration of ions implanted in semiconductor materials - Google Patents

Improved method and apparatus for measuring the concentration of ions implanted in semiconductor materials

Info

Publication number
EP0944810A4
EP0944810A4 EP98932942A EP98932942A EP0944810A4 EP 0944810 A4 EP0944810 A4 EP 0944810A4 EP 98932942 A EP98932942 A EP 98932942A EP 98932942 A EP98932942 A EP 98932942A EP 0944810 A4 EP0944810 A4 EP 0944810A4
Authority
EP
European Patent Office
Prior art keywords
concentration
measuring
improved method
semiconductor materials
ions implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98932942A
Other languages
German (de)
French (fr)
Other versions
EP0944810A1 (en
Inventor
Matthew J Banet
John A Rogers
Martin Fuchs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/885,786 external-priority patent/US6052185A/en
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of EP0944810A1 publication Critical patent/EP0944810A1/en
Publication of EP0944810A4 publication Critical patent/EP0944810A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
EP98932942A 1997-06-30 1998-06-26 Improved method and apparatus for measuring the concentration of ions implanted in semiconductor materials Withdrawn EP0944810A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US885786 1997-06-30
US08/885,786 US6052185A (en) 1997-06-30 1997-06-30 Method and apparatus for measuring the concentration of ions implanted in semiconductor materials
US08/926,850 US6118533A (en) 1997-06-30 1997-09-10 Method and apparatus for measuring the concentration of ions implanted in semiconductor materials
US926850 1997-09-10
PCT/US1998/013473 WO1999000641A1 (en) 1997-06-30 1998-06-26 Improved method and apparatus for measuring the concentration of ions implanted in semiconductor materials

Publications (2)

Publication Number Publication Date
EP0944810A1 EP0944810A1 (en) 1999-09-29
EP0944810A4 true EP0944810A4 (en) 2007-08-08

Family

ID=27128771

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98932942A Withdrawn EP0944810A4 (en) 1997-06-30 1998-06-26 Improved method and apparatus for measuring the concentration of ions implanted in semiconductor materials

Country Status (3)

Country Link
EP (1) EP0944810A4 (en)
JP (1) JP2001500976A (en)
WO (1) WO1999000641A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU738894B2 (en) 1997-12-19 2001-09-27 Bernard Siu System and method for laser ultrasonic bond integrity evaluation
US6795198B1 (en) * 1998-05-28 2004-09-21 Martin Fuchs Method and device for measuring thin films and semiconductor substrates using reflection mode geometry

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996023197A1 (en) * 1995-01-24 1996-08-01 Massachusetts Institute Of Technology Device and method for time-resolved optical measurements

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996023197A1 (en) * 1995-01-24 1996-08-01 Massachusetts Institute Of Technology Device and method for time-resolved optical measurements

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
E. GAUBAS ET AL.: "INVESTIGATION OF RECOMBINATION PARAMETERS IN ION IMPLNATED LAYER.SUBSTRATE Si STRUCTURRES", DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES, MAT. RES. SOC. SYMPOSIUM PROCEEDINGS, 17.-21. APRIL 1995, SAN FRANCISCO, CA, USA, vol. 378, 17 April 1995 (1995-04-17), pages 603 - 608, XP009077882 *
HIROYUKI NISHIMURA ET AL: "APPLICATION OF LASER-INDUCED GHZ SURFACE ACOUSTIC WAVES TO EVALUATE ION-IMPLANTED SEMICONDUCTORS", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO, JP, vol. 31, no. 31 - 1, January 1992 (1992-01-01), pages 91 - 93, XP000322480, ISSN: 0021-4922 *
HUI NIE ET AL: "High-speed, low-noise resonant-cavity avalanche photodiodes", LASERS AND ELECTRO-OPTICS SOCIETY ANNUAL MEETING, 1996. LEOS 96., IEEE BOSTON, MA, USA 18-19 NOV. 1996, NEW YORK, NY, USA,IEEE, US, vol. 1, 18 November 1996 (1996-11-18), pages 392 - 393, XP010205231, ISBN: 0-7803-3160-5 *
J. VATKUS ET AL.: "Mapping of GaAs and Si wafers and ion-implanted layers by light-induced scattering and absorption of IR light", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 7, no. 1A, 1 January 1992 (1992-01-01), pages A131 - A134, XP002417038 *
JOHN ASHLEY ROGERS: "Time-Resolved Photoacoustic and Photothermal Measurements on Surfaces, Thin Films and Multilayer Assemblies", THESIS, XX, XX, 12 June 1995 (1995-06-12), pages 59 - 112, XP002424464 *
KIM J ET AL: "NOISE-FREE AVALANCHE MULTIPLICATION IN SI SOLID STATE PHOTOMULTIPLIERS", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 70, no. 21, 26 May 1997 (1997-05-26), pages 2852 - 2854, XP000658440, ISSN: 0003-6951 *
See also references of WO9900641A1 *
T.SAWADA, A. HARATA: "Transient reflecting grating for sub-surface analysis: GHz ultrasonic and thermal spectroscopies and imaging", APPLIED PHYSICS A, vol. 61, no. 3, 1 September 1995 (1995-09-01), pages 263 - 268, XP009077902 *
ZEBDA Y ET AL: "FREQUENCY RESPONSE AND GAIN OF MULTIQUANTUM WELL (MQW) AVALANCHE PHOTODIODE", JOURNAL OF OPTICAL COMMUNICATIONS, FACHVERLAG SCHIELE & SCHON, BERLIN, DE, vol. 18, no. 3, 1 June 1997 (1997-06-01), pages 99 - 103, XP000677447, ISSN: 0173-4911 *

Also Published As

Publication number Publication date
EP0944810A1 (en) 1999-09-29
JP2001500976A (en) 2001-01-23
WO1999000641A1 (en) 1999-01-07

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 19990707

AK Designated contracting states

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Designated state(s): DE FR GB

RIC1 Information provided on ipc code assigned before grant

Ipc: G01N 21/17 20060101AFI20070307BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20070710

STAA Information on the status of an ep patent application or granted ep patent

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18D Application deemed to be withdrawn

Effective date: 20071009